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National Bureau of Economic Research

National Bureau of Economic Research

National Bureau of Economic Research

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Hi,

I'm doing the "The Targeted Fault Campaign" with ncsim and got stuck at the following message: "ncsim: *E,FLTIGF: [FLT] Failed to inject fault at circuit_tb.U0.n2174." I already tried with other NETs, with SET, SA0, SA1, always the same error occurs.

$nchelp ncsim FLTIGF
$ncsim/FLTIGF =
    Injection time is not within the expected finish
    time for the specified fault node. Failed to inject fault.

As can be seen below, the injection time is at 2ns and the -fault_good_run -fault_tw 1ns:100ns, so in theory 2ns is inside the window 1ns:100ns.

My scripts so far, considering I already compiled the Verilog testbench and also the gates from the technology library (gate-level simulation):

#this runs ok

ncelab -work worklib -cdslib circuit/trunk/backend/synthesis/work/cds.lib -logfile ncelab.log -errormax 15 -access +wc -status -timescale 1ps/1ps worklib.circuit_tb -fault_file circuit/trunk/backend/synthesis/scripts/fi.list

#this runs ok
ncsim -fault_good_run -fault_tw 1ns:100ns -fault_work fault_db -fault_overwrite worklib.circuit_tb:module -input ../scripts/fs_strobe.tcl -exit

#this runs NOT OK
ncsim -fault_sim_run -fault_work fault_db worklib.circuit_tb:module -input ../scripts/injection.tcl -exit

After the above command, I get: "ncsim: *E,FLTIGF: [FLT] Failed to inject fault at circuit_tb.U0.n2174."

Here are the files called from the commands above.

fi.list:

fault_target circuit_tb.U0.n2174 -type SET+SA1+SA0

fs_strobe.tcl:

fs_strobe circuit_tb.WRITE_OUT circuit_tb.PC_OUT[0]

injection.tcl:

fault -stop_severity 3 -inject -time 2ns -type sa1 circuit_tb.U0.n2174

I already checked the NETs with simvision, so their paths are correct.

I'm using as reference the following document: "Functional Safety Simulation - Product Version 15.2 - April 2016"

Any ideas are welcome.

Thank you in advance.

Hi,

I'm doing the "The Targeted Fault Campaign" with ncsim and got stuck at the following message: "ncsim: *E,FLTIGF: [FLT] Failed to inject fault at circuit_tb.U0.n2174." I already tried with other NETs, with SET, SA0, SA1, always the same error occurs.

$nchelp ncsim FLTIGF
$ncsim/FLTIGF =
    Injection time is not within the expected finish
    time for the specified fault node. Failed to inject fault.

As can be seen below, the injection time is at 2ns and the -fault_good_run -fault_tw 1ns:100ns, so in theory 2ns is inside the window 1ns:100ns.

My scripts so far, considering I already compiled the Verilog testbench and also the gates from the technology library (gate-level simulation):

#this runs ok

ncelab -work worklib -cdslib circuit/trunk/backend/synthesis/work/cds.lib -logfile ncelab.log -errormax 15 -access +wc -status -timescale 1ps/1ps worklib.circuit_tb -fault_file circuit/trunk/backend/synthesis/scripts/fi.list

#this runs ok
ncsim -fault_good_run -fault_tw 1ns:100ns -fault_work fault_db -fault_overwrite worklib.circuit_tb:module -input ../scripts/fs_strobe.tcl -exit

#this runs NOT OK
ncsim -fault_sim_run -fault_work fault_db worklib.circuit_tb:module -input ../scripts/injection.tcl -exit

After the above command, I get: "ncsim: *E,FLTIGF: [FLT] Failed to inject fault at circuit_tb.U0.n2174."

Here are the files called from the commands above.

fi.list:

fault_target circuit_tb.U0.n2174 -type SET+SA1+SA0

fs_strobe.tcl:

fs_strobe circuit_tb.WRITE_OUT circuit_tb.PC_OUT[0]

injection.tcl:

fault -stop_severity 3 -inject -time 2ns -type sa1 circuit_tb.U0.n2174

I already checked the NETs with simvision, so their paths are correct.

I'm using as reference the following document: "Functional Safety Simulation - Product Version 15.2 - April 2016"

Any ideas are welcome.

Thank you in advance.

25 August 2009 Review of age discrimination laws – what will the impact be on employers? Last month, the Government announced its intention to bring forward a review of the law around forced retirement. The review concerns the ‘default...

Subhash Ghai is one of the celebrated filmmakers of Bollywood. He has films like Taal, Karz, Ram Lakhan and Khalnayak to his credit and has worked with several A-list actors. However, the director has never worked with Amitabh Bachchan. The two had started working on a project but it was called off in its early stage. In an exclusive conversation with Bollywood Hungama, Subhash Ghai revealed why they never completed the film.

Talking about why the film was stalled, Subhash Ghai said, “Both of us tried to make the film, but the situation was such that the film could not be made. Neither of us was at fault. Sometimes situations are such that you feel that films cannot be made and we stop in between. There were several factors. Even I was at fault as I was impatient back then. He is one of the finest actors of India and it is my bad luck that I could not work with him. He does the bad scenes also so well that it puts the writer to shame. I did not write as well as Amitabh Bachchan performed it. I am a great admirer of Amitabh Bachchan and we are family friends. It was not in our fate to work with each other.”

However, Subhash Ghai seems hopeful of working with the veteran actor in the future when the time is right and they get the right script. The incomplete film of Subhash Ghai and Amitabh Bachchan was titled Devaa. In 2013 there were reports of Subhash Ghai collaborating with Bachchan for the biopic of Sarabjit which was ultimately essayed by Randeep Hooda and directed by Omung Kumar.

ALSO READ: EXCLUSIVE: Subhash Ghai reveals the plot of Khalnayak 2 with Sanjay Dutt, Madhuri Dixit, and Jackie Shroff

While endless rounds of complaint and criticism have been seen in every arena, this has not led the public to demand that the size of government be reduced. How long will this last? The India Together editorial.

If you raise the price of your product and offer a discount on the higher price, some people will get taken in by such 'sales'. The WTO has just pulled off this kind of scheme, says Devinder Sharma.

The microstructures of six stacking-faulted industrially produced cobalt- and aluminium-bearing nickel layered double hydroxide (LDH) samples that are used as precursors for Li(Ni1−x−yCoxAly)O2 battery materials were investigated. Shifts from the brucite-type (AγB)□(AγB)□ stacking pattern to the CdCl2-type (AγB)□(CβA)□(BαC)□ and the CrOOH-type (BγA)□(AβC)□(CαB)□ stacking order, as well as random intercalation of water molecules and carbonate ions, were found to be the main features of the microstructures. A recursive routine for generating and averaging supercells of stacking-faulted layered substances implemented in the TOPAS software was used to calculate diffraction patterns of the LDH phases as a function of the degree of faulting and to refine them against the measured diffraction data. The microstructures of the precursor materials were described by a model containing three parameters: transition probabilities for generating CdCl2-type and CrOOH-type faults and a transition probability for the random intercalation of water/carbonate layers. Automated series of simulations and refinements were performed, in which the transition probabilities were modified incrementally and thus the microstructures optimized by a grid search. All samples were found to exhibit the same fraction of CdCl2-type and CrOOH-type stacking faults, which indicates that they have identical Ni, Co and Al contents. Different degrees of interstratification faulting were determined, which could be correlated to different heights of intercalation-water-related mass-loss steps in the thermal analyses.