One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

The present disclosure relates to an apparatus for fastening a power semiconductor using an integral springy (elastic) clip, capable of fixing a power semiconductor, such as a diode and a MOSFET, using elasticity of a U-shaped clip by integrally molding the clip onto a housing of a plastic module. The apparatus includes an elastic (springy) clip integrally molded onto a lower surface of the housing and downwardly curved into a U-like shape in a bridge module in which a bridge of the power semiconductor protrudes through a through hole of the housing to be connected to a printed circuit board, whereby the power semiconductor is fixed by a force that the housing presses the power semiconductor.

A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive film on the insulating film while filling the recess with the conductive film; and (d) polishing the conductive film. Step (d) includes a first polishing substep of using a first polisher pad conditioned with a first dresser and a second polishing substep of using a second polisher pad conditioned with a second dresser different from the first dresser.

Embodiments of the invention provides a decoder for decoding a signal received through a transmission channel in a communication system, said signal carrying information symbols selected from a given alphabet and being associated with a signal vector, said transmission channel being represented by a channel matrix, wherein said decoder comprises: a sub-block division unit (301) configured to divide the received signal vector into a set of sub-vectors in correspondence with a division of a matrix related to said channel matrix;a candidate set estimation unit (305) for recursively determining candidate estimates of sub-blocks of the transmitted signal corresponding to said sub-vectors, each estimate of a given sub-block being determined from at least one candidate estimate of the previously processed sub-blocks,wherein said candidate set estimation unit is configured to determine a set of candidate estimates for at least one sub-block of the transmitted signal by applying at least one iteration of a decoding algorithm using the estimates determined for the previously processed sub-blocks, the number of candidate estimates determined for said sub-block being strictly inferior to the cardinal of the alphabet and superior or equal to two, the decoder further comprising a signal estimation unit (306) for calculating an estimate of the transmitted signal from said candidate estimates determined for said sub-blocks.

A semiconductor device configured to perform an A/D conversion of a wide range of signals is provided. A semiconductor device includes: an input voltage detection unit configured to detect an analog input voltage; a reference voltage setting unit configured to set a reference voltage based on the detected input voltage; an amplifier configured to amplify a difference between the input voltage and the reference voltage; an ADC configured to perform an A/D conversion of an amplified signal; and an arithmetic processing unit configured to calculate a digital voltage corresponding to the input voltage based on a result of the A/D conversion and the reference voltage.

A semiconductor device having an analog/digital conversion circuit converting an analog signal to a digital signal, includes a holding circuit outputting an analog signal having a value according to a value of an analog signal supplied in a first period; and a prediction circuit generating a first digital signal based on bit position information from a prediction table corresponding to the supplied analog signal.

A semiconductor device includes a substrate, a first thin film transistor supported on the substrate and having a first active layer that primarily contains a first oxide semiconductor, and second thin film transistor supported on the substrate and having a second active layer that primarily contains a second oxide semiconductor with a higher mobility than the first oxide semiconductor. The first active layer and the second active layer are positioned on the same insulating layer and contact the same insulating layer.

A semiconductor device includes first and second semiconductor chips mounted on one package. In the first semiconductor chip, a current generation circuit generates a sense current in accordance with a load current and a fault current indicating that an abnormality detection circuit has detected an abnormality, and allows either one of the currents to flow through a current detecting resistor in accordance with presence or absence of detection of the abnormality. In the second semiconductor chip, a storage circuit stores a current value of the fault current obtained in an inspection process of the semiconductor device as a determination reference value. An arithmetic processing circuit sets a standard range based on the determination reference value, and determines presence or absence of detection of the abnormality based on whether or not a current value indicated by a digital signal of an analog-digital conversion circuit is included within the standard range.

Provided is a method for simply evaluating defects caused in interface states in oxide semiconductor thin films and protective films in TFTs having protective films formed on the surface of oxide semiconductor thin films without actually measuring the characteristics of the same. This evaluation method evaluates defects caused in the interface states by measuring electron states in the oxide semiconductor thin film by a contact method or noncontact method. The defects caused in the interface states are any of the following (1)-(3). (1) Threshold value voltage (Vth,) when a positive bias is applied to the thin-film transistor(2) Difference in threshold value voltage (ΔVth) before and after applying the positive bias to the thin-film transistor(3) Threshold value during the first measurement when a plurality of measurements is made of the threshold value voltage when a positive bias is applied to the thin-film transistor.

The present disclosure provides a semiconductor device including: a power supply input section to which a first voltage from a battery cell is input; a boosting section including one end to which the first voltage from the power supply input section is input, and another end that, based on a control signal from a controller, outputs the first voltage or a second voltage boosted from the first voltage from as a power supply voltage; and a comparison section including an output section, a first input section connected to the power supply input section and the one end of the boosting section, and a second input section connected to the another end of the boosting section, the comparison section outputting a voltage from the output section that corresponds to a difference between voltages input to the first input section and the second input section.

A semiconductor device for measuring a voltage of a battery cell, including first and second nodes, and first and second battery voltage measurement units. The first node is configured to receive a first voltage, the first voltage being a voltage of a capacitor that accumulates an electric charge based on the voltage of the battery cell. The first battery voltage measurement unit measures the first voltage through a first path. The second node is configured to receive a second voltage based on the voltage of the battery cell, the second node being different from the first node. The second battery voltage measurement unit measures the second voltage through a second path that is different from the first path.

A semiconductor detector includes a plate-shaped semiconductor part, a signal output electrode for outputting a signal provided at one surface of the semiconductor part, a plurality of curved electrodes provided at the one surface of the semiconductor part and which have distances from the signal output electrode that are different from each other, and an arc-shaped collection electrode for collecting an electric charge generated at the semiconductor part. The plurality of curved electrodes are applied with voltage to generate in the semiconductor part a potential gradient in which a potential varies toward the signal output electrode. The collection electrode is located at a part of the semiconductor part between an adjacent pair of curved electrodes. The collection electrode is connected to a curved electrode located a distance from the signal output electrode shorter than a distance between the collection electrode and the signal output electrode among the curved electrodes.

A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part. The second semiconductor part is in contact with the first semiconductor part. The gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part.

The diagnosis of male infertility is based predominantly on the results of standard semen analysis for concentration, total motility, progressive motility, volume, pH, viscosity and/or morphology. When sperm enter the female reproductive tract, they must undergo a series of physiological changes, known as capacitation, in order to fertilize an egg. This process involves plasma membrane changes that occur in response to stimuli within the female tract. These changes include removal of sterols and redistribution of the ganglioside GM1. Semen analysis identifies only half the cases of male infertility due to standard semen analysis providing little information on sperm functional competence. Previous data demonstrated that localization of the ganglioside, GM1, identifies sub-populations of sperm capable of undergoing the functional maturation process known as capacitation and tracks strongly with fertility.

Embodiments are directed to an electromagnetic memory device having a memory cell and an encapsulation layer formed over the memory cell. The memory cell may include a magnetic tunnel junction (MTJ), and the encapsulation layer may be formed from a layer of hydrogenated amorphous silicon. Amorphous silicon improves the coercivity of the MTJ but by itself is conductive. Adding hydrogen to amorphous silicon passivates dangling bonds of the amorphous silicon, thereby reducing the ability of the resulting hydrogenated amorphous silicon layer to provide a parasitic current path to the MTJ. The hydrogenated amorphous silicon layer may be formed using a plasma-enhanced chemical vapor deposition, which can be tuned to enable a hydrogen level of approximately 10 to approximately 20 percent. By keeping subsequent processing operations at or below about 400 Celsius, the resulting layer of hydrogenated amorphous silicon can maintain its hydrogen level of approximately 10 to 20 percent.

The semiconductor device according to the present invention has an upper electrode, a first lower layer wiring that also functions as a lower electrode, an electrical resistance-changing film interposed between the upper electrode and the first lower layer wiring, a second lower layer wiring, and a contact plug, the contact plug connecting to the upper electrode and to the second lower layer wiring. The present invention yields a semiconductor device with which it is possible to dispose elements in high density while maintaining the reliability and manufacturing yield of the electrical resistance-changing element.

A polymer compound comprising a structural unit represented by the formula (1): wherein R1, R2, R3 and R4 each independently represent an alkyl group, an aryl group or a monovalent heterocyclic group, and these groups optionally have a substituent, two rings A may be the same or different, and represent a thiophene ring, a benzothiophene ring or a thienothiophene ring, n represents 1 or 2, and X represents a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an amino group, an aryl group, a monovalent heterocyclic group, an alkenyl group or an alkynyl group, and these groups optionally have a substituent, and when n is 2, two groups X may be the same or different.

VENUES showing the upcoming Rugby World Cup Semi Final between England and New Zealand taking place on Saturday October 26 at 9am.

Recruitment firm announces series of leadership development events.

Storm Ciara and Storm Dennis haven’t stopped Hurlford United from doing what they almost always do at this time of year… ready themselves to take part in a Macron Scottish Junior Cup quarter-final tie

Neilston’s aspirations of making a first-ever Macron Scottish Junior Cup semi-final appearance were given a reality check in quite atrocious footballing conditions at Brig O’Lea on Saturday.

The song “Closing Time” by the American rock band Semisonic came out in March 1998. It hit #1 on the Alternative charts, and was nominated for a Grammy for Best Rock Song. It gets played in stadiums, Weird Al covered it, and it’s the last song of the night in countless bars.

Since then, Dan Wilson, the lead singer and songwriter of Semisonic, has become a powerhouse songwriter who has written or co-written for artists like John Legend and Taylor Swift. And he’s won Grammys for his songwriting with the Dixie Chicks and Adele. But over two decades ago, Dan and his bandmates John Munson and Jacob Slichter were in Minneapolis, getting ready to start work on their second album, Feeling Strangely Fine. In this episode of Song Exploder, Dan breaks down how that process led to "Closing Time."

songexploder.net/semisonic

The defending champions are going back to the Women's World Cup title game. Two early goals from Christen Press and birthday girl Alex Morgan lifted the U.S. past England and into the championship match, where the Americans will face either the Netherlands or Sweden.

Portland’s Haylee Andrews scored the winning basket with 3.6 seconds left as the Pilots beat the 11th-ranked Zags 70-69 in Las Vegas.

India and England's Twenty20 World Cup semi-final was washed out and Australia's clash with South Africa almost was too, all without a backup plan in place. How was this allowed to happen?

As it prepares for the Rugby World Cup decider, England is hit with a fine for its reaction to New Zealand's haka before their epic semi-final in Japan last weekend.

It's hoped a new house using a shared-ownership model will give people with disabilities a chance at home ownership and semi-independent living, but it comes with a $300,000 price tag per person.

Investors in MagnaChip Semiconductor Corporation (NYSE:MX) had a good week, as its shares rose 6.5% to close at...

(United States Federal Circuit) - Ruling of the International Trade Commission that respondent-intervenor uPI violated the Consent Order as to the imports known as "formerly accused products" is affirmed, the modified penalty is affirmed, and the ruling of no violation as to the post-Consent Order products is reversed, where: 1) substantial evidence does not support the Commission's conclusion that uPI's post-Consent Order products were independently developed; and 2) the United States sale or importation of downstream products, which incorporate uPI's formerly accused upstream products and infringe the '190 patent, constitutes a violation of the Consent Order's knowingly aiding or abetting provision.

(California Court of Appeal) - Award of attorney fees to defendant in an underlying action for misappropriation of trade secret by seeking to hire away plaintiff's employees, is affirmed where: 1) the trial court's findings are free of procedural error; 2) the finding of plaintiff's bad faith is amply supported by evidence that defendants did no more than attempting to recruit the employees of a competitor, which they are entitled to do under California state law; and 3) defendant prevailed when plaintiff dismissed the suit to avoid an adverse determination on the merits.

(California Court of Appeal) - In a trademark secrets and employment case arising out of the formation of defendant uPI Semiconductors by employees of plaintiff Richtek, the sustaining of defendants' demurrer is reversed where the trial court improperly took judicial notice of the substantive allegations contained in two 2007 court complaints filed in Taiwan to resolve factual disputes in the case.

(United States Federal Circuit) - Affirmed in part and vacated in part where a jury found that defendant had infringed on plaintiff's patents and had awarded damages based on the entire market value rule. The Federal Circuit court affirmed the infringement judgment, but vacated the damages award stating that the entire market value rule could not be used in this case.

NMS Has Been One Of The Choice Places For Music Pros And Artists To Gather And Discuss The Future Of The Music Industry Since Its Creation In 1980

Revisit what it’s like to run a PDP-10 and be eaten by a grue

Source code for seminal adventure game Zork, dating back to 1977 and recovered from MIT tapes, was published this week on GitHub.…

My student, Jaume de Dios, has set up a web site to collect upcoming mathematics seminars from any institution that are open online.  (For instance, it has a talk that I will be giving in an hour.)   There is a form for adding further talks to the site; please feel free to contribute (or make […]