A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer. The substrate intermediate layer and the device intermediate layer comprise a distribution in their compositions along a thickness coordinate.

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

A transistor device includes a compound semiconductor body having a first surface and a two-dimensional charge carrier gas disposed below the first surface in the compound semiconductor body. The transistor device further includes a source in contact with the two-dimensional charge carrier gas and a drain spaced apart from the source and in contact with the two-dimensional charge carrier gas. A first passivation layer is in contact with the first surface of the compound semiconductor body, and a second passivation layer is disposed on the first passivation layer. The second passivation layer has a different etch rate selectivity than the first passivation layer. A gate extends through the second passivation layer into the first passivation layer.

A reconfigurable fixed position suspension and support structure attached to the trailer body using a locking device consisting of pins, bolts and/or other fastening devices. The support structure has a removable locking device that when attached to the support structure locks the support structure and suspension into a fixed position relative to the trailer body. When the trailer is not in operation, the locking device can be removed allowing the suspension group to be reconfigured, and each suspension to be repositioned relative to the trailer body. The removable locking device is then reattached to the suspension support structure locking the support structure and suspension into a new fixed position relative to the trailer body.

Apparatus for separating ash particles from a flue gas. The apparatus includes a screen that has a plurality of semi-elliptical cylinder surfaces. The semi-elliptical cylinder surfaces having holes through which said flue gas flows and through which the ash particles will not pass. The screen has a single layer for performing the separation in a manner such that the ash particles fall away from the screen and collect outside of the screen. A method of reducing velocity of a flue gas passing through screening apparatus for separating flue gas from ash particles. The method includes replacing a first screen of the screening apparatus with a second screen that has a plurality of semi-elliptical cylinder surfaces.

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

The present teachings relate to new semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.

An input receiver circuit including a single-to-differential amplifier and a semiconductor device including the input receiver circuit are disclosed. The input receiver circuit includes a first stage amplifier unit and a second stage amplifier unit. The first stage amplifier unit amplifies a single input signal in a single-to-differential mode to generate a differential output signal, without using a reference voltage. The second stage amplifier unit amplifies the differential output signal in a differential-to-single mode to generate a single output signal.

A microwave semiconductor amplifier includes a semiconductor amplifier element, an input matching circuit and an output matching circuit. The semiconductor amplifying element includes an input electrode and an output electrode and has a capacitive output impedance. The input matching circuit is connected to the input electrode. The output matching circuit includes a bonding wire and a first transmission line. The bonding wire includes first and second end portions. The first end portion is connected to the output electrode. The second end portion is connected to one end portion of the first transmission line. A fundamental impedance and a second harmonic impedance seen toward the external load change toward the one end portion. The second harmonic impedance at the one end portion has an inductive reactance. The output matching circuit matches the capacitive output impedance of the semiconductor amplifying element to the fundamental impedance of the external load.

A semiconductor package device comprises a radio frequency power transistor having an output port operably coupled to a single de-coupling capacitance located within the semiconductor package device. The single de-coupling capacitance is arranged to provide both high frequency decoupling and low frequency decoupling of signals output from the radio frequency power transistor.

An apparatus of semiconductor process including a chuck and a vacuum source is provided. The chuck has a plurality of holes for holding a semiconductor substrate, and the vacuum source is used for providing vacuum suction through the holes to make the semiconductor substrate be subjected to varied suction intensities according to a warpage level thereof.

A semi-automated machine for singulating individual surgical needles from an bulk supply and attaching a suture to the surgical needle is described. Each of the surgical needles has a suture receiving opening formed therein for receiving a suture. The machine includes a needle singulation station, a precise positioning station, a suture feeding station, a swage station, a pull-test station and an off-load station. The singulation station has a sliding surface that assists an operator in singulating needles and depositing them in a pair of drop locations for subsequent automatic handling. Indexing conveyors, an articulated robot and a precision conveyor are used with a pre-positioning and a precise positioning station for orienting each needle for automatic handling. A universal gripper mounted on a rotary indexing device automatically receives each individual needle in a predetermined orientation and conveys the needle for sequential processing from station to station to form the needle-suture assembly. A swage station is provided for swaging the needle to close the suture receiving opening about the suture to secure said suture thereto and form therefrom a needle and suture assembly. A final off-load station provides an apparatus for assembling a predetermined number of need-suture assemblies in a bundle for subsequent packaging.

The device may have a plurality of upright supports where the supports may include a mounting plate with mounting openings, a plurality of vertical members that may be in non-welded communication with the extruded back mounting plate and a plurality of horizontal members where the vertical members provide strength and support to the supports. The horizontal under-run prevention beam may include mounting openings that correspond to the horizontal beam mounting openings and a removable reflective strip that correspond to reflective strip openings in the beam. The vertical and horizontal members may be stacked extruded rectangles of the desired widths and lengths.

A method of producing a semifinished confectionary product, such as chocolate or similar, using at least one centrifugal unit for simultaneously grinding and mixing at least some of the ingredients of the semifinished product, and which includes an elongated processing chamber with a substantially horizontal axis, at least one inlet for the ingredients to be processed and one outlet for the processed ingredients, and a powered shaft fitted inside the processing chamber, coaxially with the axis, and fitted with a succession of radial appendixes arranged between the inlet and the outlet; the method including the steps of loading at least a first ingredient of the semifinished product through the inlet; grinding the first ingredient inside the grinding and mixing unit by rotating the shaft at a first speed; loading at least a second ingredient through the inlet, after grinding; rotating the shaft at a second speed to grind and mix the ingredients to form a mixture of the same grain size as the semifinished product; loading at least a third ingredient through the inlet; mixing the third ingredient with the previously ground mixture to form a further mixture; bringing the further mixture to a given temperature to obtain the semifinished product; and transferring the semifinished product to a storage or packaging station.

The invention relates to a fixing element for locking a hinged hand crank on the input shaft of a support winch for semi-trailers, wherein the hand crank is fastened to the input shaft in an articulated manner and can pivot between at least one folded-in rest position and at least one folded-out usage position. According to the invention, said fixing element has a fastening section for fastening to the hand crank and a spring bar connected to the fastening section on which at least one locking section is formed, wherein the locking section reaches over the end face of the input shaft in a form-fitting manner in a folded-out usage position of the hand crank and is simultaneously pulled against said end face of the input shaft.

The present invention relates to an electronic device comprising at least one organic semiconducting material according to the following formula (I): wherein R1-4 are independently selected from H, halogen, CN, substituted or unsubstituted C1-C20-alkyl or heteroalkyl, C6-C20-aryl or C5-C20-heteroaryl, C1-C20-alkoxy or C6-C20-aryloxy, Ar is selected from substituted or unsubstituted C6-C20-aryl or C5-C20-heteroaryl, and R5 is selected from substituted or unsubstituted C6-C20-aryl or C5-C20-heteroaryl, H, F or formula (II).

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface.

A semiconductor apparatus includes a pattern conversion circuit configured to generate conversion data in response to a monitoring enable signal, pattern select signals and parallel input data; a transmission circuit configured to output the conversion data as serial data in response to a plurality of clocks; a reception circuit configured to output the serial data as parallel output data in synchronization with the plurality of clocks; and a monitoring circuit configured to generate a result signal in response to the plurality of clocks, clock select signals and the serial data.

The invention relates to a metal-cutting machining process for a semi-finished product having a predetermined shape and at least one machining surface which has the steps: applying a protective foil having a predetermined elongation at break to the at least one machining surface with a predetermined adhesive force, placing a metal-cutting tool in a predetermined position above the machining surface, exerting a predetermined mechanical force in a predetermined direction for a predetermined length of time to the tool for carrying out a metal-cutting process on the semi-finished product and lifting the tool from the at least one machining surface after the predetermined length of time. In order to protect the semi-finished products from damage through the machining residues and at the same time not to impair the drilling performance, according to the invention through the adhesion an adhesive force is produced between the protective foil and the machining surface of substantially 10 N/25 mm and a protective foil is used which has an elongation at break of between 80 and 120%.

An ice making system includes a flavored liquid, an ice machine and a refrigerated storage bin. The ice making system continuously produces flavored ice pieces for storage in an ice storage bin. A refrigeration system cools the ice storage bin.

A semiconductor device includes a plurality of circuits, a general bus configured to be connected to each of the plurality of circuits and to provide a general channel among the plurality of circuits, and a designated bus configured to be connected to a subgroup of circuits from among the plurality of circuits and to provide a designated channel among the subgroup of circuits.

A semiconductor substrate for use in an integrated circuit, the semiconductor substrate including a channel defined on a surface of the substrate. The channel includes a first wall, a second wall, and a third wall. The first wall is recessed from the surface. The second wall extends from the surface to the first wall. The third wall extends from the surface to the first wall and faces the second wall across the channel. At least one of the second wall and the third wall includes a plurality of structures projecting into the channel from the second wall or the third wall.

A Si or Ge semi-conductor substrate includes an oxygen monolayer on a surface thereof. The oxygen monolayer can be fractional or complete. A Si4+ or Ge4+ oxidation state of the surface of the Si or Ge substrate, respectively, resulting from the presence of the oxygen monolayer represents less than 50%, preferably less than 40% and more preferably less than 30% of the sum of Si1+, Si2+, Si3+ and Si4+ oxidation states or the sum of Ge1+, Ge2+, Ge3+ and Ge4+ oxidation states, respectively, as measured by XPS.

A method for slicing a plurality of wafers from a crystal includes providing a crystal of semiconductor material having a longitudinal axis, a cross section and at least one pulling edge. The crystal is fixed on a table and guided through a wire gang defined by sawing wire so as to form the wafers. The guiding is provided by a relative movement between the table and the wire gang such that entry sawing or exit sawing using the sawing wire occurs in a vicinity of the at least one pulling edge of the crystal.

A method for cooling a cylindrical workpiece during wire sawing includes applying a liquid coolant to a surface of the workpiece. The workpiece is made of semiconductor material having a surface including two end faces and a lateral face. The method includes sawing the workpiece with a wire saw including a wire web having wire sections arranged in parallel by penetrating the wire sections into the workpiece by an oppositely directed relative movement of the wire sections and the workpiece. Wipers are disposed so as to bear on the surface of the workpiece. The temperature of the workpiece is controlled during the wire sawing using a liquid coolant applied onto the workpiece above the wipers so as to remove the liquid coolant with the wipers bearing on the workpiece surface.

The invention relates to a method for the vertical semi-continuous direct chill casting of composite billets or plates comprising at least two layers of aluminum alloys, using a separator which is in contact with the solidification front and which provides a seal between the two alloys during casting, said separator being vibrated while it is in contact with the solidification front, so that the separator is not frozen in and entrained by the solid metal. The invention also relates to a device that can be used to carry out said method.

A method of casting a semi-liquid or semi-solid iron-based alloy, the method including: applying, to a part or to the whole of an uppermost surface of an inner surface of a die, a lubricating die-release agent in which particles including at least one selected from molybdenum disulfide, graphite, tungsten disulfide, boron nitride, chrome oxide and boric oxide are dispersed in a solvent; and thereafter casting by using the die.

A machine for the homogenization and thermal treatment of liquid and semi-liquid food products, for example ice creams, whipped cream, creams, chocolate, yogurt and the like, comprises a containment tank for the mixture and a centrifugal pump put in fluid communication with the bottom of the containment tank for drawing mixture from the tank and putting it back into the tank, heating and cooling means acting at the pump for heating and cooling the mixture in transit in the pump. The heating and cooling means comprise a thermal machine with reversible thermodynamic cycle and using carbon dioxide as refrigerant.

A method and apparatus for substantially automatically joining front and back parts of buttons employs a turntable with retaining means that are rotated through a series of stations at which the parts are placed in the retaining means in a desired orientation, joined, and checked for defects. A human operator places button front parts at a first station, and the remaining stations carry out the assembly and quality control steps automatically. Placement at the first station determines the alignment and orientation of the two buttons.

A method for detaching a semiconductor chip from a foil uses a die ejector comprising plates having a straight supporting edge and an L-shaped supporting edge comprises: lifting of the plates to a height H1 above the surface of a cover plate;lowering of a first pair of plates with L-shaped supporting edge;optionally, lowering of a second pair of plates with L-shaped supporting edge;lifting of the plates that have not yet been lowered to a height H2>H1;staggered lowering of plates that have not yet been lowered, with at least one or several plates not being lowered;optionally, lowering of the plates that have not yet been lowered to a height H3

Semi-autonomous vehicle apparatus which is controlled by a plurality of control sources includes a vehicle which may function autonomously and apparatus for control of the vehicle by either an onboard driver or a driver not situated onboard. The vehicle may also be controlled by an off-vehicle computational device. Hierarchy setting apparatus determines which of the possible control entities take priority. Persons using the apparatus are identified by either a password or, preferably by providing identification based on a biologic feature. Management of impaired vehicle operators is provided for.