‘The modifications will strengthen the semi-conductor scheme and raise capacities within the country’

The order includes Silicon Solar Cells, melted Silicon Crystals, and Polycrystalline materials, aimed at supporting the setup of 106 MW solar power PV modules in various locations across Maharashtra

The statement from the government pointed out that the foundation stone for Micron’s advanced semiconductor ATMP plant was laid in Sanand, marking an investment of over ₹22,500 crore

The new company will primarily focus on four industry segments for its ASIC turnkey offerings – automotive, industrial, telecommunications, and healthcare: Cyient VP

Conductor Marin Alsop examines some band and orchestra scenes from popular movies and television shows and determines how accurate they really are.

The chip design, software development, system circuits, and manufacturing supply chain management are also expected to be open. 

The 64-32 vote means advancing legislation which will help the U.S. semiconductor industry compete with China

IEEE / Institute of Electrical and Electronics Engineers Incorporated

IEEE / Institute of Electrical and Electronics Engineers Incorporated

IEEE / Institute of Electrical and Electronics Engineers Incorporated

Tata Sons to partner with Singapore in semiconductor industry, showcasing Singapore’s significance in global semiconductor production

Universities to use the Semiverse Solutions virtual innovation infrastructure to train engineers for the semiconductor industry

The program aims to inspire students and industry partners to pursue careers in electronics and tackle challenging scientific problems relevant to societal needs and sustainable growth

More than ever before, companies in this sector see the need to strike a meaningful and lasting partnership with academia

Archives, Room Use Only - TK5275.F54 1927

The preferred orientation growth characteristics and surface roughness of polycrystalline bis­muth (Bi) thin films fabricated on glass substrates using the molecular beam epitaxy method were investigated at temperatures ranging from 18 to 150°C. The crystallization and morphology were analyzed in detail and the polycrystalline metal film structure-zone model (SZM) was modified to fit the polycrystalline Bi thin film. The boundary temperature between Zone T and Zone II in the SZM shifted to higher temperatures with the increase in film thickness or the decrease of growth rate. Furthermore, the effect of the thickness and surface roughness on the transport properties was investigated, especially for Bi thin films in Zone II. A two-transport channels model was adopted to reveal the influence of the film thickness on the competition between the metallic surface states and the semiconducting bulk states, which is consistent with the results of Bi single-crystal films. Therefore, the polycrystalline Bi thin films are expected to replace the single-crystal films in the application of spintronic devices.

Efficient infiltration of a mesoporous titania matrix with conducting organic polymers or small molecules is one key challenge to overcome for hybrid photovoltaic devices. A quantitative analysis of the backfilling efficiency with time-of-flight grazing incidence small-angle neutron scattering (ToF-GISANS) and scanning electron microscopy (SEM) measurements is presented. Differences in the morphology due to the backfilling of mesoporous titania thin films are compared for the macromolecule poly[4,8-bis­(5-(2-ethyl­hexyl)­thio­phen-2-yl)benzo[1,2-b;4,5-b']di­thio­phene-2,6-diyl-alt-(4-(2-ethyl­hexyl)-3-fluoro­thieno[3,4-b]thio­phene-)-2-carboxyl­ate-2-6-diyl)] (PTB7-Th) and the heavy-element containing small molecule 2-pinacol­boronate-3-phenyl­phen­anthro[9,10-b]telluro­phene (PhenTe-BPinPh). Hence, a 1.7 times higher backfilling efficiency of almost 70% is achieved for the small molecule PhenTe-BPinPh compared with the polymer PTB7-Th despite sharing the same volumetric mass density. The precise characterization of structural changes due to backfilling reveals that the volumetric density of backfilled materials plays a minor role in obtaining good backfilling efficiencies and interfaces with large surface contact.

Ba excess in LaBaGaO4 triggers ionic conductivity together with structural disorder. A direct correlation is found between the density functional theory model energy and the pair distribution function fit residual.

Emissions of the greenhouse gases (GHGs) tetrafluoromethane (TFM) and hexafluoroethane (HFE) reported by industry accounted for only around half actual levels measured in the atmosphere between 2002 and 2010, new research reveals. The semiconductor and aluminium production industries, the two main sources of these gases, have reported success in their voluntary efforts to control these emissions. However, this does not match ‘top-down’ atmospheric monitoring, the researchers say.

Omron‘s unique Automated inspection capability ensures process quality in a mass-production environment by using Submicron CT imaging with a variety of Metrology data.(VT-X700 / VT-X900)

We review some recent results on the phenomenon of surface superconductivity in the framework of Ginzburg-Landau theory for extreme type-II materials. In particular, we focus on the response of the superconductor to a strong longitudinal magnetic field in the regime where superconductivity survives only along the boundary of the wire. We derive the energy and density asymptotics for samples with smooth cross section, up to curvature-dependent terms. Furthermore, we discuss the corrections in presence of corners at the boundary of the sample.

Disclosed are polymeric compositions with improved breakdown strength. The polymeric compositions contain a polyolefin and a voltage stabilizing agent. The voltage stabilizing agent contains a triazine. The triazine may include a substituent that enables keto-enol tautomerism, which provides the voltage stabilizing agent with additional energy dissipation capacity. The present polymeric compositions exhibit improved breakdown strength when applied as an insulating layer for power cable.

The present invention is directed to an electroconductive silver thick film paste composition comprising Ag, a glass frit and rhodium resinate, Cr2O3 or a mixture thereof all dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The paste is particularly useful for forming a tabbing electrode.

Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10−4 mol and the molar ratio of ions is Cu:Zn:Sn=2:1:1, and 2.0 cm3 of oleylamine is added to prepare a mixed solution. Apart from this, 1.0 cm3 of oleylamine is added to 2.0×10−4 mol of sulfur powder to prepare a mixed solution. These mixed solutions are separately heated at 60° C. and mixed at room temperature. The pressure in a test tube is reduced, followed by nitrogen filling. The test tube is heated at 240° C. for 30 minutes and then allowed to stand until room temperature. The resultant product is separated into a supernatant and precipitates by centrifugal separation. The separated supernatant is filtered, methanol is added to produce precipitates. The precipitates are dissolved by adding chloroform to prepare a semiconductor nanoparticle solution.

Device for forming, on a nanowire made of a semiconductor, an alloy of this semiconductor with a metal or metalloid by bringing this nanowire into contact with electrically conductive metal or metalloid probes and Joule heating the nanowire at the points of contact with the probes so as to form an alloy such as a silicide. Application to the production of controlled-channel-length metal-silicide transistors.

Set of compositions for preparing system-in-package type semiconductor device. The composition set consists of underfill composition for preparing underfill part and encapsulation resin composition for preparing resin encapsulation part. 1) A cured product of the underfill composition has a glass transition temperature, Tg, ≧100° C. and is the same with or differs from a Tg of a cured product of the encapsulation resin composition by ≦20° C. 2) Total linear expansion coefficient of the cured product of the underfill composition at a temperature not higher than (Tg−30)° C. and a linear expansion coefficient of the cured product of the encapsulation resin composition at a temperature not higher than (Tg−30)° C. is ≦42 ppm/° C. 3) A ratio of the linear expansion coefficient of the cured product of the encapsulation resin composition to the linear expansion coefficient of the cured product of the underfill composition ranges from 0.3 to 1.0.

Disclosed is an epoxy resin composition used for encapsulation of a semiconductor containing an epoxy resin (A), a curing agent (B), an inorganic filler (C) and a mold releasing agent, in which the mold releasing agent contains a compound (D) having a copolymer of an α-olefin having 28 to 60 carbon atoms and a maleic anhydride esterified with a long chain aliphatic alcohol having 10 to 25 carbon atoms.

A semiconductor memory device includes a selection signal generation unit configured to generate a plurality of selection signals that are sequentially activated, a path selection unit configured to select a transmission path of sequentially input information data in response to the plurality of selection signals, a plurality of first storage units, each configured to have a first storage completion time and store an output signal of the path selection unit, and a plurality of second storage units, each configured to have a second storage completion time, which is longer than the first storage completion time, and store a respective output signal of the plurality of first storage units.

A method for bypassing a defective through silicon via x in a group of n adjacent through silicon vias, includes receiving a plurality of relief signals to identify the defective through silicon via x, activating x−1 switch circuits to connect x−1 data circuits to through silicon vias 1 to x−1 in the group of n adjacent through silicon vias, activating n-x switch circuits to connect n-x data circuits to through silicon vias x+1 to n in the group of n adjacent through silicon vias, and activating a switch circuit to connect a data circuit to an auxiliary through silicon via which is adjacent through silicon via n in the group of n adjacent through silicon vias.

A relationship between distance from a back bias control section which outputs a control signal for controlling a back bias of a transistor and an amount of noise in the control signal outputted from the back bias control section is found. An increase of jitter corresponding to the amount of the noise in a clock transmitted on a clock path connected to a circuit section (IP macro) is found on the basis of the relationship between the distance from the back bias control section and the amount of the noise. The circuit section and the clock path are placed on the basis of the increase of the jitter and an allowable jitter value for the circuit section.

A method and apparatus for partitioning of the input design into repeating patterns called template cores for the application of reticle enhancement methods, design verification for manufacturability and design corrections for optical and process effects is accomplished by hierarchy analysis to extract cell overlap information. Also hierarchy analysis is performed to extract hierarchy statistics. Finally template core candidates are identified. This allows to the design to be made amenable for design corrections or other analyses or modifications that are able to leverage the hierarchy of the design since the cell hierarchy could otherwise be very deep or cells could have significant overlap with each other.

A method for accurately determining the shape of currents in a current spectrum for a circuit design is provided. The method includes determining timing and power consumption characteristics. In one embodiment, timing characteristics are provided through a electronic design automation tool. The timing characteristics yield a current pulse time width. In another embodiment, power consumption characteristics are provided by an EDA tool. The power consumption characteristics yield a current pulse amplitude. The shape of the current pulse is obtained by incrementally processing a power analyzer tool over relatively small time increments over one or more clock cycles while capturing the switching nodes of a simulation of the circuit design for each time increment. In one embodiment, the time increments are one nanosecond or less.

The present invention is directed to provide a semiconductor surface treating agent; composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent; composition, comprising [I] a compound generating a fluorine ion in water, [II] a carbon radical generating agent; , [III] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used: (wherein R1 represents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; R2 represents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups).

Disclosed are an oxide superconductor tape and a method of manufacturing the oxide superconductor tape capable of improving the length and characteristics of superconductor tape and obtaining stabilized characteristics across the entire length thereof. A Y-class superconductor tape (10), as an oxide superconductor tape, comprises a tape (13) further comprising a tape-shaped non-oriented metallic substrate (11), and a first buffer layer (sheet layer) (12) that is formed by IBAD upon the tape-shaped non-oriented metallic substrate (11); and a second buffer layer (gap layer) (14), further comprising a lateral face portion (14a) that is extended to the lateral faces of the first buffer layer (sheet layer) (12) upon the tape (13) by RTR RF-magnetron sputtering.