The wire winding apparatus includes: a wire feeding member provided to a supporting member so as to be operable, for feeding a wire; a lock mechanism capable of inhibiting an operation of the wire feeding member; a winding mechanism for rotating a core about an axis thereof to wind the wire fed from the wire feeding member around the outer circumference of the core; a feed mechanism for moving the supporting member in an axial direction of the core in synchronization with the winding performed by the winding mechanism; a proximity sensor for detecting a movement amount of the wire feeding member with respect to the supporting member; and a control section for controlling an operation of the feed mechanism to adjust a movement amount of the supporting member moved by the feed mechanism based on a detection output from the proximity sensor.

An agricultural implement system that includes a control system configured to receive a first signal to initiate seeding operations, to transition a ground engaging tool toward a working position at a first time after receiving the first signal, and to activate a product delivery system at a second time, different from the first time, after receiving the first signal.

A method and apparatus for automating some of the tasks that heretofore required operator action at headland turns or similar events are provided. The present invention automates operation of lift assist wheels and/or gull wings, such as those found on a stack-fold implement, based on the position of the tractor hitch to which the implement is coupled. An operator may control the position of the implement, such as at a headland turn, by raising and lowering the tractor hitch using a remote control. The invention enables the planter to compare the tractor hitch position relative to an implement position and control operation of the implement accordingly without additional user inputs.

A seed metering assembly for a farm implement has a meter roller that can be accessed and removed in a relatively quick manner. The seed metering assembly includes a fluted meter roller that is segmented into a number of discrete fluted sections. Each fluted section has an associated flow control member that is selectively operable to impede the flow of granular material from a seed hopper to its corresponding section of the fluted meter roller.

Agricultural seed planting systems are provided. In some aspects, the system includes a processing unit, a frame, a furrow opener coupled to the frame for opening a furrow in soil, and a sensor in communication with the processing unit and adapted to sense a characteristic associated with seed planting. The sensor may generate a signal associated with the sensed characteristic and the processing unit may receive the signal. In some aspects, the sensed characteristic may be either a soil characteristic or a seed characteristic. Information associated with the sensed characteristic can be saved in memory for future use and to assist with more effective planting in the future.

Agricultural planter row units feature soil finishing assemblies for closing a seed groove after seed is placed in the soil. An adjustable furrow closing assembly enhances upper seed groove coverage and closure with soil resulting in sustained relative humidity levels and optimum seed-to-soil contact for faster seed germination. The furrow closing assembly includes a closing wheel assembly having at least one closing wheel and a press wheel assembly having a press wheel following behind the closing wheels. The closing wheels and press wheel are attached to the planter row unit in a manner allowing the press wheel to move vertically relative to the closing wheels. Adjustable down-force systems are provided to vary the down force applied to the closing wheels and the press wheel to maintain optimum soil contact in irregular terrain and in varying soil densities and conditions to provide optimum soil coverage and compaction of the seed bed.

An emissions recycling system is used on a vehicle towing an agricultural implement to enrich the fertility of the soil. The system includes an exhaust collector for collecting exhaust emissions from the internal combustion engine of the towing vehicle and an exhaust distribution system for injecting at least a portion of the exhaust emissions collected by the exhaust collector into the ground worked by the ground working tools of the agricultural implement. Fertility of the soil is enriched by bioactivity within the soil's micro flora which consumes the greenhouse gas and emissions.

Referring to the drawings, wherein like reference numerals designate identical or corresponding parts throughout the several views, FIG. 1 illustrates a side elevation view of a single row unit (10) of a conventional row crop planter such as the type disclosed in U.S. Pat. No. 7,438,006, the disclosure of which is hereby incorporated herein in its entirety by reference. As is well known in the art, the row units (10) are mounted in spaced relation along the length of a transverse toolbar (12) by a parallel linkage (14), comprised of upper and lower parallel arms (16, 18) pivotally mounted at their forward ends to the transverse toolbar (12) and at their rearward end to the row unit frame (20).

A no-till apparatus for application of herbicide and fertilizer, soil preparation, and seeding of a cover crop in a standing crop has inter-row assemblies configured to pass along inter-row areas between adjacent row lines of standing crop plants. Each assembly includes a fertilizer applicator, a no-till soil preparation element, a cover crop seed applicator, and a post-seeding element.

Disclosed are apparatus and method for decontaminating and sterilizing chemical and biological agents, which can efficiently decontaminate and sterilize high precision electronic devices, communication devices, computers or inside of vehicles and air planes contaminated with chemical and biological agent by using mixture of non-thermal atmospheric pressure air plasma and oxidizing peroxide vapor. The apparatus according to the present invention comprises a decontamination and sterilization chamber 10; a first fluid supplying line L1 and a second fluid supplying line L2, which are installed in the form of closed circuit between the inlet 11 and outlet 12 of the decontamination and sterilization chamber 10; a peroxide vapor supplier which is installed on the first fluid supplying line; and a non-thermal atmospheric pressure air plasma reactor 70 which is installed on the second fluid supplying line L2.

A nanogap device includes a first insulation layer having a nanopore formed therein, a first nanogap electrode which may be formed on the first insulation layer and may be divided into two parts with a nanogap interposed between the two parts, the nanogap facing the nanopore, a second insulation layer formed on the first nanogap electrode, a first graphene layer formed on the second insulation layer, a first semiconductor layer formed on the first graphene layer, a first drain electrode formed on the first semiconductor layer, and a first source electrode formed on the first graphene layer such as to be apart from the first semiconductor layer.

An analyte sensor system including a substrate, a first electrode disposed on a first surface of the substrate, a second electrode disposed on a second surface of the substrate, a third electrode provided in electrical contact with at least one of the first or second electrodes, where at least a portion of the first electrode and the second electrode are subcutaneously positioned in a patient, and where the third electrode is substantially entirely positioned external to the patient, and corresponding methods are provided.

A method to inexpensively and efficiently produce conductive materials on the surface of which a nano-level fine structure is formed includes surface modification including immersing a stable anode electrode and a workpiece as a cathode electrode, the workpiece including a conductive material with a work surface, in an electrolytic solution, then applying a voltage not less than a first voltage and less than a second voltage between the stable anode electrode and the workpiece as the cathode electrode immersed in the electrolytic solution, thereby modifying the work surface, the first voltage being a voltage corresponding to a current value that is ½ of the sum of a first maximum current value appearing first in a positive voltage region and a first minimum current value appearing first in the positive voltage region with respect to voltage-current characteristics of a surface modification treatment system, the second voltage exhibiting a complete-state plasma.

A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.

An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate. The apparatus includes a mask disposed in such a way as to cover a part of the top surface of the substrate on an upstream side of a position where the sputtering film is formed, and a temperature regulator which regulates the temperature of the target.

Methods and systems for measuring the oxidation-reduction potential of a fluid sample are provided. The system includes a test strip with a sample chamber adapted to receive a fluid sample. The sample chamber can be associated with a filter membrane. The test strip also includes a reference cell. The oxidation-reduction potential of a fluid sample placed in the sample chamber can be read by a readout device interconnected to a test lead that is in electrical contact with the sample chamber, and a reference lead that is in electrical contact with the reference cell. Electrical contact between a fluid sample placed in the sample chamber and the reference cell can be established by a bridge. The oxidation-reduction potential may be read as an electrical potential between the test lead and the reference lead of the test strip.

The present invention provides methods, devices, and kits for separating and selecting top sperm from a sperm sample of a subject. In one aspect, for example, such a method can include removing a portion of negatively charged protein from sperm in the sperm sample, immobilizing the sperm, electrophoretically separating the sperm, and selecting mature sperm based on electromotility properties.

Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.

The invention relates to a method for producing alkaline amides or imides of ethylenically unsaturated C3 to C6 carboxylic acids by reacting amines that contain at least one primary and/or secondary amino group and at least one tertiary amino group with ethylenically unsaturated C3 to C6 carboxlic acids to form an ammonium salt and said ammonium salt is subsequently converted into the alkaline amide or imide by means of microwave radiation, with the proviso that the primary and/or secondary amino group is devoid of alkoxy groups.

Methods and apparatus for applying pulsed DC power to a plasma processing chamber are disclosed. In some implementations, frequency of the applied power is varied to achieve desired processing effects such as deposition rate, arc rate, and film characteristics. In addition, a method and apparatus are disclosed that utilize a relatively high potential during a reverse-potential portion of a particular cycle to mitigate possible nodule formation on the target. The relative durations of the reverse-potential portion, a sputtering portion, and a recovery portion of the cycle are adjustable to effectuate desired processing effects.

A method for producing a transparent and conductive metal oxide layer on a substrate, includes atomizing at least one component of the metal oxide layer by highly ionized, high power pulsed magnetron sputtering to condense on the substrate. The pulses of the magnetron have a peak power density of more than 1.5 kW/cm2, the pulses of the magnetron have a duration of ≦200 μs, and the average increase in current density during ignition of the plasma within an interval, which is ≦0.025 ms, is at least 106 A/(ms cm2).

The present disclosure relates to an electrode strip, a sensor strip, a system thereof and a manufacturing method thereof. The sensor strip includes a first reactive film, a second reactive film and a vent hole. The first reactive film includes a substrate, a first electrode layer and a first insulation layer. The first end of the first insulation layer is concaved to a first depth to form a first reactive area. The second reactive film includes a second electrode layer and a second insulation layer. The first end of the second insulation layer is concaved to a second depth to form a second reactive area. The vent hole penetrates the second insulation layer, the second electrode layer and the first insulation layer so as to connect the first reactive area and the second reactive area.

In a gas sensor sensing a specific gas component contained in gas to be measured, oxygen ion conductive solid electrolyte is used in a sensing element for sensing the specific gas component. A terminal unit is used, which comprises a pair of insulators, each having an inner side surface, disposed to pinch and hold the base end portion of the sensing element on the pair of electrode-mounted surfaces of the sensing element. The terminal unit comprises two pairs of metal terminals and a spring member. The metal terminals electrically contact electrode pads of the sensing element, pair by pair, respectively, and are disposed on the inner side surfaces of the insulators. The spring members press the pair of insulators at one or more positions of electrode-mounted surfaces of the sensing element in a width direction so that the insulators are pressed to be opposed to each other.

The present invention provides a device that decreases deformation during manufacturing of the device, provides a firm joint without use of an adhesive, and allows chemical modification of a channel during manufacturing of the device. The device includes two joined substrates, and a concavity is formed on at least one of the opposing surfaces of the two substrates so as to make a channel, where the two substrates are joined together by a covalent bond via a crosslinking agent (A), and the crosslinking agent (A) is exposed on an inner wall surface of the channel.

The present invention provides a method for fabricating a working electrode. The method comprises the following steps: providing a photoelectrode, which comprises a conductive substrate with a semiconductor material; providing a dye solution, which comprises a dye dissolved in a solvent; and applying a voltage for conducting an electrophoresis to adsorb said dye onto a surface of said semiconductor material. The method of present invention makes the dye adsorbed fast to a surface of a semiconductor material by electrophoresis, and therefore, significantly reduces the time for fabricating a dye-sensitized solar cell.

A metal material is provided with a bismuth coating which enables the subsequent coating to be accomplished at a high throwing power, and has excellent corrosion resistance, coating adhesion and is able to be produced with reduced damage to the environment. The metal material has a surface and a bismuth-containing layer deposited on at least a part of the surface of the metal material, wherein the percentage of bismuth atoms in the number of atoms in the surface layer of the metal material with a bismuth coating is at least 10%.

A well, in particular an open well (14) with an upper end having a vertical axis (101), for containing a liquid and particles contained within said liquid, characterized by comprising at least two manipulation electrodes (1, 2, 3, 31, 32, 36, 17, 40, 41) able to be powered by electrical voltages, in particular alternating electrical voltages, so as to manoeuvre particles within the well by means of the dielectrophoretic effect. A platform comprising a plurality of wells as described above and a method for using said well.

Disclosed are electrochemical cells and methods for producing a halide of a non-alkali metal and for electrorefining the halide. The systems typically involve an electrochemical cell having a cathode structure configured for dissolving a hydrogen halide that forms the halide into a molten salt of the halogen and an alkali metal. Typically a direct current voltage is applied across the cathode and an anode that is fabricated with the non-alkali metal such that the halide of the non-alkali metal is formed adjacent the anode. Electrorefining cells and methods involve applying a direct current voltage across the anode where the halide of the non-alkali metal is formed and the cathode where the non-alkali metal is electro-deposited. In a representative embodiment the halogen is chlorine, the alkali metal is lithium and the non-alkali metal is uranium.

An implement is disclosed for smoothing grounds that include at least a compact base having a top surface and a lesser compact footing on top of the base. The implement includes a frame having a front portion, a central portion, a rear portion, and a width. Wheels are mounted for rotation directly to the frame, and tools are carried by the frame for engagement with the ground. The tools include a specially shaped cleaving blade connected to the rear portion of the frame by a tool support, which securely connects the cleaving blade at predetermined heights. The blade has a front shaving edge and a rear compressing edge. The blade extends straight across the width of the frame so as to maximize the drag displaced on the frame during use of the blade. Arrangement of the wheels directly on the frame provides optimal stabilization of the frame during operation of the blade.

A system for determining a cut location at a work surface includes a position sensor and a controller. The controller stores a final design plane of the work surface and determines an actual profile of the work surface. A plurality of target profiles extending along a path are determined, each corresponding to a cut location. The target profiles are based at least in part upon the cut location, a loading profile, slot parameters, and the actual profile of the work surface. The controller is further configured to determine a lowest cost target profile and the lowest cost target profile defines an optimized cut location. A method is also provided.

A method to collect soil cores from a green comprises the steps of providing a soil core collector, extracting soil cores from a green, allowing the cores to dry for at least fifteen minutes, and utilizing the core collector to gather the cores from the green.

A machine includes a plurality of ground engaging elements and an operator control station supported on a frame. A work tool is pivotably attached to the frame using a lift arm assembly and a tilt linkage. At least one device measures a quantity associated with at least one of the lift arm assembly, the tilt linkage, and the work tool. An electronic controller, in communication with an operator display and the at least one device. The electronic controller is configured to store an operator selected orientation of the work tool, calculate a current orientation of the work tool based on the quantity, and calculate a deviation of the current orientation from the operator selected orientation. A visual representation of the deviation is displayed on the operator display.

Some embodiments of a ground surface treatment system can include a flexible roller system having one or more of rollers arranged in a side-by-side position and include a flexible axle member extending through each row of rollers.

The disclosure describes, in one aspect, a system and method for controlling a rotation angle of a blade of a motor grader having a front frame operatively coupled to a rear frame at a point defining an articulation angle between the front and rear frames. The control system includes at least one sensor operatively associated with the blade, at least one sensor operatively associated with a wheel, at least one sensor operatively associated with at least one of the front frame or the rear frame, and a controller operatively coupled to the at least one sensors. The controller is adapted to determine a current position of the blade, determine a wheel steering angle, determine an articulation angle, and control the rotation angle of the blade based in part on the wheel steering angle and the articulation angle.

A cleanup device having a first board having a first edge, a second board having a first edge, a first hinge attached to the first edge of the first board and the first edge of the second board, an aperture defined by a portion of the first edge of the first board and a portion of the first edge of the second board, a first plate slidably attached to the first board, wherein the first plate is movable from a first, open position where the aperture is open to a second, closed position where the first plate extends over at least a portion of the aperture, and wherein a top surface of the first board is movable towards a top surface of the second board to form a V-shaped surface for directing dirt or soil off of the first board and the second board.

A swing control apparatus and a swing control method for a construction machine are provided. The swing control apparatus includes a start position estimation unit, a stop target position calculation unit, and a swing motor position control unit. Even if an operator releases a lever or commands a stop at different times, an upper swing structure of the construction machine (for example, excavator) can be stopped within a predetermined range, and thus the inconvenience caused by an additional driving operation, which is required as the stop position differs according to the time point where the stop command starts, can be solved.

A turf cutter device, an infill extractor/collector device, and a turf wind-up device are used to facilitate the cost-effective removal of an infilled synthetic turf and the subsequent installation of a new turf at the same site, with minimal subsurface disruption. An infill extractor/collector device mounted on a motorized vehicle moves a relatively narrow strip of filled artificial turf from the surface, in front of the vehicle, and directs the strip to an infill removal station. The infill removal station inverts the strip and redirects the strip back toward the front of the vehicle, after agitating the strip to extract the infill. After redirecting the strip toward the front of the vehicle, the vehicle drives over the unfilled strip. Meanwhile, the extractor/collector device moves the extracted infill rearwardly to a bag located in a trailer. The turf cutter device is used prior to infill extraction, while the turf wind up device may be used before or after infill extraction, depending on whether infill extraction takes place at the field or at a remote site, respectively.

A system for determining a cut location at a work surface includes a position sensor and a controller. The controller stores a desired operating parameter and a final design plane of the work surface and determines an actual profile of the work surface. The controller determines a plurality of target profiles corresponding to different cut locations. The target profiles are based at least in part upon the cut location, a loading profile, slot parameters, and the actual profile of the work surface. The controller further determines an optimized target profile relative to the desired operating parameter and the optimized target profile defines an optimized cut location.

A brake control system and method for motor vehicles is provided with an electronic control unit, by which, when the motor vehicle is stationary, a parking brake function can be activated manually or automatically. Its deactivation occurs upon reaching a predefined release condition. In the presence of a release condition the brake pressure, which was built up for the parking brake function, is released in a time offset manner at least in relation to the axles of the vehicle by way of the control unit.

According to embodiments of the invention, a TFT array substrate, a manufacturing method of the TFT array substrate and a display device are provided. The method comprises: depositing a metal film on a substrate, and forming a gate electrode and a gate line; forming a gate insulating layer and a passivation layer on the substrate; depositing a transparent conductive layer, a first source/drain metal layer and a first ohmic contact layer, and forming a drain electrode, a pixel electrode, a data line, and a first ohmic contact layer pattern provided on the drain electrode; and depositing a semiconductor layer, a second ohmic contact layer and a second source/drain metal layer, and forming a source electrode, a second ohmic contact layer pattern provided below the source electrode, and a semiconductor channel between the source electrode and the drain electrode.

An organic light emitting display device includes a light shield layer formed on a substrate and a buffer layer formed on an entire surface of the substrate, an oxide semiconductor layer and first electrode formed on the buffer layer, a gate insulation film and gate electrode formed on the oxide semiconductor layer while being deposited to expose both edges of the oxide semiconductor layer, an interlayer insulation film formed to expose both the exposed edges of the oxide semiconductor layer and the first electrode, source and drain electrodes connected with one edge and the other edge of the oxide semiconductor layer, respectively, and a protective film formed to cover the source and drain electrodes while exposing a region of the first electrode so as to define a luminescent region and a non-luminescent region.

An organic light emitting diode (OLED) display a includes: a substrate; an organic light emitting element on the substrate and including a first electrode, a light emission layer, and a second electrode; and an encapsulation layer on the substrate while covering the organic light emitting element. The encapsulation layer includes an organic layer and an inorganic layer. A mixed area, where organic materials forming the organic layer and inorganic materials forming the inorganic layer co-exist along a plane direction of the encapsulation layer, is formed at the boundary between the organic layer and the inorganic layer.

An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.

A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.