The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.

According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.

A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

A light emitting device including a light emitting structure having a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer, a transparent conductive layer disposed on the light emitting structure, a metal filter having an irregular pattern disposed between the light emitting structure and the transparent conductive layer, and openings disposed between the irregular patterns in the metal filter.

It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer. The substrate intermediate layer and the device intermediate layer comprise a distribution in their compositions along a thickness coordinate.

A display device comprising TFT elements having satisfactory characteristics and being easy to assemble. In the display device, a pixel emitting red light comprises a red color filter. The red color filter forms a light shielding film for the TFT elements in a driver circuit portion or in a pixel portion.

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A light-emitting element includes a first electrode, a first light-emitting layer formed over the first electrode, a second light-emitting layer formed on and in contact with the first light-emitting layer to be in contact therewith, and a second electrode formed over the second light-emitting layer. The first light-emitting layer includes a first light-emitting substance and a hole-transporting organic compound, and the second light-emitting layer includes a second light-emitting substance and an electron-transporting organic compound. Substances are selected such that a difference in LUMO levels between the first light-emitting substance, the second light-emitting substance, and the electron-transporting organic compound is 0.2 eV or less, a difference in HOMO levels between the hole-transporting organic compound, the first light-emitting substance, and the second light-emitting substance is 0.2 eV or less, and a difference in LUMO levels between the hole-transporting organic compound and the first light-emitting substance is greater than 0.3 eV.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

The present invention has an object of providing a light-emitting device including an OLED formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the OLED (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided. Owing to a laminate structure, if a crack occurs in one of the barrier films, the other barrier film(s) can prevent moisture or oxygen from penetrating into the organic light emitting layer. The stress relaxing film, which has a smaller stress than the barrier films, is interposed between the barrier films, making it possible to reduce stress of the entire sealing film. Therefore, a crack due to stress hardly occurs.

A microelectronic assembly includes a first component with first conductive elements; a second component with second conductive elements; a bond metal; and an underfill layer. The posts have a height above the respective surface from which the posts project. A bond metal can be disposed between respective pairs of conductive elements, each pair including at least one of the posts and at least one of the first or second conductive elements confronting the at least one post. The bond metal can contact edges of the posts along at least one half the height of the posts. An underfill layer contacts and bonds the first and second surfaces of the first and second components. A residue of the underfill layer may be present at at least one interfacial surfaces between at least some of the posts and the bond metal or may be present within the bond metal.

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

A transistor device includes a compound semiconductor body having a first surface and a two-dimensional charge carrier gas disposed below the first surface in the compound semiconductor body. The transistor device further includes a source in contact with the two-dimensional charge carrier gas and a drain spaced apart from the source and in contact with the two-dimensional charge carrier gas. A first passivation layer is in contact with the first surface of the compound semiconductor body, and a second passivation layer is disposed on the first passivation layer. The second passivation layer has a different etch rate selectivity than the first passivation layer. A gate extends through the second passivation layer into the first passivation layer.

A vehicle collision damage mitigation system includes: a vehicle having a crashable zone on a front side of a dash panel in a vehicle longitudinal direction; a body airbag device that inflates a body airbag that is provided on a front surface of the dash panel by a pressure of gas generated by a gas generating device; a detector that detects whether a mode of a frontal collision of the vehicle is a full-overlap collision or another collision; and a control unit that operates the gas generating device when detecting a collision other than the full-overlap collision on the basis of a detection result of the detector and that does not operate the gas generating device when detecting the full-overlap collision.

A retractor includes a spool configured to selectively wind and unwind the webbing, a lock base configured to operate in a free position and a locked position, a first energy absorbing member coupled to the spool and the lock base, and a second energy absorbing member coupled to the spool and the lock base. When the lock base is in the free position, the spool and lock base freely rotate together when a force is applied on the spool through the webbing. When the lock base is in the locked position and a force is applied on the spool through the webbing, rotation of the spool is permitted while rotation of the lock base is prevented, such that the first energy absorbing member absorbs a first energy and the second energy absorbing member is configured to absorb a second energy after a predetermined rotation of the spool.

A skateboard is provided having a transparent deck. First and second wheel assemblies are attached to the front and rear portion of the skateboard, respectively. The wheel assemblies each include a truck and two wheels. Each respective wheel comprises a wheel covering having a translucent surface and a wheel interior defined by a rotational axis and the wheel covering. The wheel interior houses a wheel generator configured to generate electricity and light emitting devices electrically coupled to the wheel generator that emit light when the wheel generator generates electricity. The skateboard also has a graphics layer on the top surface of the deck that is illuminated by the light emitting devices. The graphics layer comprises an adhesive surface having a graphic printed thereon and an adhesive applied thereon. The adhesive surface is adhesively affixed to the top or bottom surface of the transparent or translucent plastic deck.

A reconfigurable fixed position suspension and support structure attached to the trailer body using a locking device consisting of pins, bolts and/or other fastening devices. The support structure has a removable locking device that when attached to the support structure locks the support structure and suspension into a fixed position relative to the trailer body. When the trailer is not in operation, the locking device can be removed allowing the suspension group to be reconfigured, and each suspension to be repositioned relative to the trailer body. The removable locking device is then reattached to the suspension support structure locking the support structure and suspension into a new fixed position relative to the trailer body.

The present invention relates to a swim chair that allows a mobility challenged individual to be transported across the sand with exceptional ease, to lounge on the chair and enjoy the company and sights, to be pulled into the water and, if able, to slip off the chair to go for a swim, remount the chair and return to shore. The chair includes a main frame, defined by a top frame member and two side frame members; two axle support plates, at or in communication with the side frame members of the main frame, the axle support plates having a plurality of openings to receive a wheel axle and optionally a pull rod axle; a wheel assembly; a drop seat; a footrest and a backrest.

According to an embodiment, a drilling fluid comprises: water and a set accelerator, wherein the drilling fluid has a 10 minute gel strength of less than 20 lb*ft/100 sq ft, wherein the drilling fluid has a density in the range of about 9 to about 14 pounds per gallon, wherein the drilling fluid remains pourable for at least 5 days, and wherein when at least one part of the drilling fluid mixes with three parts of a cement composition consisting of water and cement, the drilling fluid cement composition mixture develops a compressive strength of at least 1,200 psi. According to another embodiment, a method of using the drilling fluid comprises the steps of: introducing the drilling fluid into at least a portion of a subterranean formation, wherein at least a portion of the drilling fluid is capable of mixing with a cement composition.

Embodiments of the invention relate to polycrystalline diamond compacts (“PDCs”) comprising a polycrystalline diamond (“PCD”) table including at least a portion having aluminum carbide disposed interstitially between bonded-together diamond grains thereof, and methods of fabricating such PDCs. In an embodiment, a PDC includes a substrate, and a PCD table bonded to the substrate. The PCD table includes a plurality of bonded-together diamond grains defining a plurality of interstitial regions. The PCD table further includes aluminum carbide disposed in at least a portion of the plurality of interstitial regions.

A surface contamination monitoring system/method configured to correct the detected the radioactive net count rate (NCR) value of a whole-body surface contamination monitoring device based on monitored subject height and thickness is disclosed. The system includes a height detection means for determining the height of a monitored subject and a thickness detection means for determining the thickness of at least a portion of the monitored subject. The net count rate (NCR) is corrected based on the determined height and thickness of the monitored subject as applied to site calibration factor data and self-shielding factor data to produce a corrected net count rate (CNR). If the corrected net count rate (CNR) registers above a preset alarm threshold, the monitored subject is considered contaminated and an appropriate alarm is registered.

Systems and methods are disclosed herein to a radiation safety system comprising radiation emitting medical equipment; a radiation safety system controller connected to the radiation emitting medical equipment through a first communication means configured to determine a number of people within a radiation room housing the radiation emitting medical equipment and prevent the radiation emitting medical equipment from performing radiation emitting functions if the radiation safety system controller determines that more people than a maximum allowed number of people are presently in the radiation room; and a scanner connected to the radiation safety controller through a second communication means configured to detect people in the radiation room and communicate to the radiation safety system controller that a person has been detected.

A camera array, an imaging device and/or a method for capturing image that employ a plurality of imagers fabricated on a substrate is provided. Each imager includes a plurality of pixels. The plurality of imagers include a first imager having a first imaging characteristics and a second imager having a second imaging characteristics. The images generated by the plurality of imagers are processed to obtain an enhanced image compared to images captured by the imagers. Each imager may be associated with an optical element fabricated using a wafer level optics (WLO) technology.

According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face.

An arrangement for, and a method of, electro-optically reading a target by image capture, employ an aiming assembly for projecting an aiming light pattern on the target that is located within a range of working distances relative to a housing, an imaging assembly for capturing an image of the target and of the aiming light pattern over a field of view, and a controller for determining a distance of the target relative to the housing based on a position of the aiming light pattern in the captured image, for determining a scanning resolution based on the determined distance, for comparing the determined scanning resolution with a scanning resolution setting, and for processing the captured image based on the comparison.

Sorbent components containing halogen, calcium, alumina, and silica are used in combination during coal combustion to produce environmental benefits. Sorbents such as calcium bromide are added to the coal ahead of combustion and other components are added into the flame or downstream of the flame, preferably at minimum temperatures to assure complete formation of the refractory structures that result in various advantages of the methods. When used together, the components: reduce emissions of elemental and oxidized mercury; increase the level of Hg, As, Pb, and/or CI in the coal ash; decrease the levels of leachable heavy metals (such as Hg) in the ash, preferably to levels below the detectable limits; and make a highly cementitious ash product.

Apparatus for separating ash particles from a flue gas. The apparatus includes a screen that has a plurality of semi-elliptical cylinder surfaces. The semi-elliptical cylinder surfaces having holes through which said flue gas flows and through which the ash particles will not pass. The screen has a single layer for performing the separation in a manner such that the ash particles fall away from the screen and collect outside of the screen. A method of reducing velocity of a flue gas passing through screening apparatus for separating flue gas from ash particles. The method includes replacing a first screen of the screening apparatus with a second screen that has a plurality of semi-elliptical cylinder surfaces.

This invention provides a system and method for efficiently and completely combusting oil in mixture with particulate solids. A furnace (kiln) having a feed nozzle with a lead screw drives the mixture from a feed hopper. This nozzle includes forced-air jets/ports at its tip providing makeup air and allowing atomization of the mixture. The nozzle thereby directs the mixture into a rotating combustion chamber that is tilted downwardly from the front toward a solid waste outlet port at the rear. Uncombusted fuel and air backflow to an upper, secondary chamber near the primary chamber front, and are completely combusted at a high temperature. Gasses exit a flue that can include a heat exchanger. This heat exchanger can be operatively connected to a heating device or other mechanism that converts the heat into usable energy. The nozzle can include a cone with axially tilted air ports about its perimeter.

Melters for glass forming apparatuses and glass forming apparatuses comprising the same are disclosed. According to one embodiment, a melter for melting glass batch materials includes a base portion and a rigid exoskeleton rigidly attached to the base portion and comprising a plurality of upright members interconnected with a plurality of cross members defining an exoskeleton interior volume. Connection nodes formed at intersections of the plurality of cross members with upper ends of the plurality of upright members are constrained from movement relative to the base portion in a longitudinal direction, a transverse direction, and a vertical direction. A tank assembly is positioned on the base portion in the exoskeleton interior volume and coupled to the rigid exoskeleton. In some embodiments, the melter has a dynamic resistance greater than 0.3.

A premix burner arrangement for safely oxygen-enriching a premix air-fuel combustion system is disclosed. In the disclosed burner arrangement, a first conduit is arranged and disposed to provide a first gas stream. The first gas stream is a self-reactive or self-flammable premixture comprising air and a combustible gas. At least one second conduit is arranged and disposed to provide a second gas stream circumferentially around the first gas stream. The second gas stream includes oxygen. The premix burner arrangement is configured to combust or react the first stream at a temperature at least 1000° F. greater than the temperature of the second stream. A method and combustion system including the premix burner arrangement are also disclosed.

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

The present teachings relate to new semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.