A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.

A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor.

To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

A method of fabricating a semiconductor device includes forming a gate strip including a dummy electrode and a TiN layer. The method includes removing a first portion of the dummy electrode to form a first opening over a P-active region and an isolation region. The method includes performing an oxygen-containing plasma treatment on a first portion of the TiN layer; and filling the first opening with a first metal material. The method includes removing a second portion of the dummy electrode to form a second opening over an N-active region and the isolation region. The method includes performing a nitrogen-containing plasma treatment on a second portion of the TiN layer; and filling the second opening with a second metal material. The second portion of the TiN layer connects to the first portion of the TiN layer over the isolation region.

A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.

A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP layer formed over the first SiP layer and in the recess, wherein the second SiP layer has a phosphorus concentration higher than that of the first SiP layer.

A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

Provided are superconducting circuits and, more specifically, methods of forming such circuits. A method may involve forming a silicon-containing low loss dielectric (LLD) layer over a metal electrode such that metal carbides at the interface of the LLD layer and electrode. The LLD layer may be formed using chemical vapor deposition (CVD) at a temperature of less than about 500° C. At such a low temperature, metal silicides may not form even though silicon containing precursors may come in contact with metal of the electrode. Silicon containing precursors having silane molecules in which two silicon atoms bonded to each other (e.g., di-silane and tri-silane) may be used at these low temperatures. The LLD layer may include amorphous silicon, silicon oxide, or silicon nitride, and this layer may directly interface one or more metal electrodes. The thickness of LLD layer may be between about 1,000 Angstroms and 10,000 Angstroms.

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

The present disclosure relates to an apparatus for fastening a power semiconductor using an integral springy (elastic) clip, capable of fixing a power semiconductor, such as a diode and a MOSFET, using elasticity of a U-shaped clip by integrally molding the clip onto a housing of a plastic module. The apparatus includes an elastic (springy) clip integrally molded onto a lower surface of the housing and downwardly curved into a U-like shape in a bridge module in which a bridge of the power semiconductor protrudes through a through hole of the housing to be connected to a printed circuit board, whereby the power semiconductor is fixed by a force that the housing presses the power semiconductor.

An abrasive article includes a body having abrasive particles contained within a bond material. The abrasive particles can include a majority content of silicon nitride and a minority content of sintering material including at least two rare-earth oxide materials. In an embodiment, the rare-earth oxide materials can include Nd2O3 and Y2O3. In a particular embodiment, the abrasive particles comprise a content (wt %) of Nd2O3 that is greater than a content of Y2O3 (wt %).

A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive film on the insulating film while filling the recess with the conductive film; and (d) polishing the conductive film. Step (d) includes a first polishing substep of using a first polisher pad conditioned with a first dresser and a second polishing substep of using a second polisher pad conditioned with a second dresser different from the first dresser.

Methods for preparing a silicon bonded PCD material involving a one step, double sweep process and drilling cutters made by such processes are disclosed. The PCD material includes thermally stable phases in the interstitial spaces between the sintered diamond grains. The method sweeps a diamond powder with a binder to form sintered PCD, reacts said molten binder with a temporary barrier separating said binder and said diamond from a silicon (Si) source, and sweeps said sintered PCD with said Si source to form SiC bonded PCD.

A semiconductor device configured to perform an A/D conversion of a wide range of signals is provided. A semiconductor device includes: an input voltage detection unit configured to detect an analog input voltage; a reference voltage setting unit configured to set a reference voltage based on the detected input voltage; an amplifier configured to amplify a difference between the input voltage and the reference voltage; an ADC configured to perform an A/D conversion of an amplified signal; and an arithmetic processing unit configured to calculate a digital voltage corresponding to the input voltage based on a result of the A/D conversion and the reference voltage.

A semiconductor device having an analog/digital conversion circuit converting an analog signal to a digital signal, includes a holding circuit outputting an analog signal having a value according to a value of an analog signal supplied in a first period; and a prediction circuit generating a first digital signal based on bit position information from a prediction table corresponding to the supplied analog signal.

A device for taking up a silicon melt comprises at least one block of a refractory with a capillary structure.

A semiconductor device includes a substrate, a first thin film transistor supported on the substrate and having a first active layer that primarily contains a first oxide semiconductor, and second thin film transistor supported on the substrate and having a second active layer that primarily contains a second oxide semiconductor with a higher mobility than the first oxide semiconductor. The first active layer and the second active layer are positioned on the same insulating layer and contact the same insulating layer.

A semiconductor device includes first and second semiconductor chips mounted on one package. In the first semiconductor chip, a current generation circuit generates a sense current in accordance with a load current and a fault current indicating that an abnormality detection circuit has detected an abnormality, and allows either one of the currents to flow through a current detecting resistor in accordance with presence or absence of detection of the abnormality. In the second semiconductor chip, a storage circuit stores a current value of the fault current obtained in an inspection process of the semiconductor device as a determination reference value. An arithmetic processing circuit sets a standard range based on the determination reference value, and determines presence or absence of detection of the abnormality based on whether or not a current value indicated by a digital signal of an analog-digital conversion circuit is included within the standard range.

Provided is a method for simply evaluating defects caused in interface states in oxide semiconductor thin films and protective films in TFTs having protective films formed on the surface of oxide semiconductor thin films without actually measuring the characteristics of the same. This evaluation method evaluates defects caused in the interface states by measuring electron states in the oxide semiconductor thin film by a contact method or noncontact method. The defects caused in the interface states are any of the following (1)-(3). (1) Threshold value voltage (Vth,) when a positive bias is applied to the thin-film transistor(2) Difference in threshold value voltage (ΔVth) before and after applying the positive bias to the thin-film transistor(3) Threshold value during the first measurement when a plurality of measurements is made of the threshold value voltage when a positive bias is applied to the thin-film transistor.

The present disclosure provides a semiconductor device including: a power supply input section to which a first voltage from a battery cell is input; a boosting section including one end to which the first voltage from the power supply input section is input, and another end that, based on a control signal from a controller, outputs the first voltage or a second voltage boosted from the first voltage from as a power supply voltage; and a comparison section including an output section, a first input section connected to the power supply input section and the one end of the boosting section, and a second input section connected to the another end of the boosting section, the comparison section outputting a voltage from the output section that corresponds to a difference between voltages input to the first input section and the second input section.

A semiconductor device for measuring a voltage of a battery cell, including first and second nodes, and first and second battery voltage measurement units. The first node is configured to receive a first voltage, the first voltage being a voltage of a capacitor that accumulates an electric charge based on the voltage of the battery cell. The first battery voltage measurement unit measures the first voltage through a first path. The second node is configured to receive a second voltage based on the voltage of the battery cell, the second node being different from the first node. The second battery voltage measurement unit measures the second voltage through a second path that is different from the first path.

A semiconductor detector includes a plate-shaped semiconductor part, a signal output electrode for outputting a signal provided at one surface of the semiconductor part, a plurality of curved electrodes provided at the one surface of the semiconductor part and which have distances from the signal output electrode that are different from each other, and an arc-shaped collection electrode for collecting an electric charge generated at the semiconductor part. The plurality of curved electrodes are applied with voltage to generate in the semiconductor part a potential gradient in which a potential varies toward the signal output electrode. The collection electrode is located at a part of the semiconductor part between an adjacent pair of curved electrodes. The collection electrode is connected to a curved electrode located a distance from the signal output electrode shorter than a distance between the collection electrode and the signal output electrode among the curved electrodes.

A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part. The second semiconductor part is in contact with the first semiconductor part. The gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part.

Embodiments are directed to an electromagnetic memory device having a memory cell and an encapsulation layer formed over the memory cell. The memory cell may include a magnetic tunnel junction (MTJ), and the encapsulation layer may be formed from a layer of hydrogenated amorphous silicon. Amorphous silicon improves the coercivity of the MTJ but by itself is conductive. Adding hydrogen to amorphous silicon passivates dangling bonds of the amorphous silicon, thereby reducing the ability of the resulting hydrogenated amorphous silicon layer to provide a parasitic current path to the MTJ. The hydrogenated amorphous silicon layer may be formed using a plasma-enhanced chemical vapor deposition, which can be tuned to enable a hydrogen level of approximately 10 to approximately 20 percent. By keeping subsequent processing operations at or below about 400 Celsius, the resulting layer of hydrogenated amorphous silicon can maintain its hydrogen level of approximately 10 to 20 percent.

The semiconductor device according to the present invention has an upper electrode, a first lower layer wiring that also functions as a lower electrode, an electrical resistance-changing film interposed between the upper electrode and the first lower layer wiring, a second lower layer wiring, and a contact plug, the contact plug connecting to the upper electrode and to the second lower layer wiring. The present invention yields a semiconductor device with which it is possible to dispose elements in high density while maintaining the reliability and manufacturing yield of the electrical resistance-changing element.

A polymer compound comprising a structural unit represented by the formula (1): wherein R1, R2, R3 and R4 each independently represent an alkyl group, an aryl group or a monovalent heterocyclic group, and these groups optionally have a substituent, two rings A may be the same or different, and represent a thiophene ring, a benzothiophene ring or a thienothiophene ring, n represents 1 or 2, and X represents a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an amino group, an aryl group, a monovalent heterocyclic group, an alkenyl group or an alkynyl group, and these groups optionally have a substituent, and when n is 2, two groups X may be the same or different.

A FUNDRAISING page has been launched to help a Hedge End man and his wife after the helicopter they were sightseeing in crashed into the Grand Canyon.

A HELICOPTER has launched over the Solent to rescue an injured sailor.

BE prepared for a Whole Lotta Shakin’ Goin’ On…

GENEROUS music lovers have secured the immediate future of an iconic Southampton music venue after a desperate plea for help over coronavirus cancellations.

QUEEN Extravaganza, the official Queen tribute band produced by Roger Taylor and Brian May, returns to the UK in 2021 following sell out shows across the globe. It celebrates 50 years of Queen with a one night only show at Mayflower Theatre on Sunday January 31 among 26 dates across the UK.

A HELICOPTER has launched over the Solent to rescue an injured sailor.

Created by 'American Vandal' showrunner Dan Lagana, this eight-part series is said to revolve around the life of Joe Schreibvogel, an eccentric zookeeper in Oklahoma, who fights to keep his park open.

Mark Hatten who was sentenced to nearly 7 years in jail for threatening and stalking the late actress has died following a violent altercation in South Carolina.

Twenty three years after she wore the prom dress in the 'Prophecy Girl' episode, the former 'Buffy the Vampire Slayer' star delights fans with her throwback look in a new social media post.

Vanessa Bryant seeks damages for emotional distress and mental anguish caused by the 'inexcusable' behavior of deputies at the L.A. County Sheriff's Department and the L.A. County Fire Department.

Vanessa Bryant seeks damages for emotional distress and mental anguish caused by the 'inexcusable' behavior of deputies at the L.A. County Sheriff's Department and the L.A. County Fire Department.

Innovative augmented reality feature released.

Mad O'Rourke's Pie Factory launches takeaway service.

Plugin Boutique has launched a sale on Inphonik, offering discounts of up to 50% off on its plugins for a limited time only. The RX950 Classic AD/DA Converter effect plugin is designed to perfectly mimic the whole AD/DA conversion process of the Akai S950 in order to give your music this vintage, warm and crunchy […]

The post Save up to 50% on Inphonik’s RX950 Classic AD/DA Converter and RYM2612 Iconic FM Synthesizer appeared first on rekkerd.org.

It had posted a net profit of Rs 403 crore in the corresponding quarter last year.

PepsiCo India had volunteered to support the scale up of India's COVID-19 testing capacity through support provided to FIND.

‘We have exited April at 70-80% of our run rate, which we were doing last year.’

At first, all Sophia Young wanted was to find a job until she could find a husband. Instead, she finds herself working for Scott Kraft, a notoriously unpredictable and demanding tech mogul. She soon becomes more interested in her work in investor relations than in getting married, which she never planned on. She is quickly promoted and becomes an asset at Kraft’s new business, an animation company called Treehouse that’s set to disrupt the movie industry. Fans of Pixar, Apple and Steve Jobs will enjoy the parallels between Jobs and the fictional Kraft. Kraft, who founded a revolutionary technology company called Quince before taking over Treehouse, also creates the first wave of smart phones, known as “Q-phones.” Similarly, author Anna Yen pays homage to Pixar, where she herself worked in investor relations. In the book, Treehouse creates movies like “The Amazings,” and “Treasures,” which seem to be a nod to Pixar’s real-life movies “The Incredibles” and “Toy Story.” As Sophia becomes

Sebi shall also appoint an independent audit firm for conducting a detailed forensic audit of the books of accounts of Ricoh for the financial year 2012-13 onwards till date, the cost of which shall be borne by Ricoh.