According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.

A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer. The substrate intermediate layer and the device intermediate layer comprise a distribution in their compositions along a thickness coordinate.

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

A transistor device includes a compound semiconductor body having a first surface and a two-dimensional charge carrier gas disposed below the first surface in the compound semiconductor body. The transistor device further includes a source in contact with the two-dimensional charge carrier gas and a drain spaced apart from the source and in contact with the two-dimensional charge carrier gas. A first passivation layer is in contact with the first surface of the compound semiconductor body, and a second passivation layer is disposed on the first passivation layer. The second passivation layer has a different etch rate selectivity than the first passivation layer. A gate extends through the second passivation layer into the first passivation layer.

A reconfigurable fixed position suspension and support structure attached to the trailer body using a locking device consisting of pins, bolts and/or other fastening devices. The support structure has a removable locking device that when attached to the support structure locks the support structure and suspension into a fixed position relative to the trailer body. When the trailer is not in operation, the locking device can be removed allowing the suspension group to be reconfigured, and each suspension to be repositioned relative to the trailer body. The removable locking device is then reattached to the suspension support structure locking the support structure and suspension into a new fixed position relative to the trailer body.

Interior panels having integrated airbag doors for motor vehicles and methods for making such interior panels are provided herein. In one example, an interior panel comprises a substrate having outer and inner surfaces and an opening extending therethrough. A multi-shot injection molded airbag chute-door assembly is mounted to the substrate and comprises a chute wall that at least partially surrounds an interior space. A door flap portion is pivotally connected to the chute wall and at least partially covers the opening. A perimeter flange extends from the chute wall and has a flange section that overlies the outer surface of the substrate. A molded-in lip feature extends from the flange section and contacts the outer surface to form a seal between the flange section and the substrate. A skin covering extends over the substrate and a foam is disposed between the skin covering and the substrate.

A drill bit assembly for measuring reservoir formation properties comprises a bit head and a pin body, and an electrically insulated gap joint between two conductive parts of the drill bit assembly. The bit head has a cutting end and an opposite connecting end with an engagement section. The pin body comprises a connecting end with an engagement section. The pin connecting end is connected to the bit head connecting end such that the engagement sections overlap. The electrically insulating gap joint can fill a gap between the bit head and pin body engagement sections such that the bit head and pin body are mechanically connected together at the connecting ends but electrically separated. Alternatively or additionally, the pin body can have two pieces which are separated by an electrically insulating gap joint. An electrical conductor is electrically connected at a first end to the bit head and is communicable at a second end with an alternating current signal to transmit an alternating current into the bit head, thereby inducing an electric current into a reservoir formation adjacent the bit head. Electronic equipment includes measurement circuitry configured to determine the alternating current at the bit head, the alternating current being inversely proportional to a bit resistivity of the formation.

Nozzles for drilling tools, such as rotary-type drag bits and roller cone bits, a drilling tool and drilling assembly comprising nozzles, and methods of conveying drilling fluid through a nozzle for use in drilling subterranean formations are provided. A nozzle may include a substantially cylindrical nozzle body having an axis and an inlet port with a primary passage extending therethrough, and at least one secondary passage that diverges from the primary passage at an exit port.

A rugged scintillation crystal assembly includes several scintillator crystals, which are optically coupled to each other by resilient optical-coupling material such as silicone pads and/or grease. The scintillator crystals are configured to collectively emit optical signals. Such a stack may combine the advantages of both a long form-factor for the overall assembly with the ruggedness of the assembly's component short crystals.

Apparatus for separating ash particles from a flue gas. The apparatus includes a screen that has a plurality of semi-elliptical cylinder surfaces. The semi-elliptical cylinder surfaces having holes through which said flue gas flows and through which the ash particles will not pass. The screen has a single layer for performing the separation in a manner such that the ash particles fall away from the screen and collect outside of the screen. A method of reducing velocity of a flue gas passing through screening apparatus for separating flue gas from ash particles. The method includes replacing a first screen of the screening apparatus with a second screen that has a plurality of semi-elliptical cylinder surfaces.

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

This invention is directed to a flexible solar cell photovoltaic module with high light transmittance based on modified substrate, which belongs to the field of thin-film solar cell technology. The objective of the present invention to provide a technical solution for a transparent flexible solar cell module and its fabrication method. Technical features include using a stainless steel template to mold a modified polyimide PI substrate (the PI substrate). The PI substrate has light-passing through-holes, including draining holes and convergence holes, through and distributed on the PI substrate, a conductive film layer, and various stacked photoelectric conversion film layers. The creativeness of the present invention is obvious, such as reducing the short circuit and current leakage due to crystallization of the photoelectric layer interface caused by a subsequent process of laser etching the conductive film layer, reducing the composition on the surface of the solar cell, reducing steps of the fabrication process, and lowering the production cost. Further, the present invention significantly increases the conversion efficiency and load capacity of the solar cell and the quality-cost ratio. The transparent flexible solar cell photovoltaic module also has a broad range of applications.

The present teachings relate to new semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.

An arc chute assembly includes a housing having a first wall, a second wall, and a pair of side walls coupled to the first wall. The walls configured to form an arc area. The housing further having a divider wall coupled to the first wall between the side walls. The divider wall configured to form a first sub-arc area, a second sub-arc area, and an arc plate area. The first sub-arc area and the second sub-arc area are configured to be in flow communication with the arc plate area. The arc chute assembly further comprises a support coupled to the first wall and the side walls, and an arc plate coupled to the support. The arc plate having a body extending between the side walls and over the divider wall.

A method of manufacturing a power contactor from an existing contactor having a magnetic amplifier that comprises a blowout coil and a ferromagnetic core, and an arc chute for extinguishing an arc generated by opening the existing contactor under a current load is disclosed. The method includes removing a bolt assembly from the existing contactor and at least one side plate from the existing contactor. The method also includes removing the ferromagnetic core from the existing contactor.

The invention relates to a medium voltage switchgear assembly which comprises at least one disconnector and whose drive unit is disposed inside or outside a gas chamber according to the generic part of claim 1. In order to further develop a switchgear assembly of the generic type so as to render the same more compact and more functional, the disconnector is embodied as a three-position vacuum chamber switch.

An arc runner assembly for use in a circuit interrupter provides a pair of arc runners that are situated at opposite sides of a stationary contact of the circuit interrupter. If used in a DC application, the arc runner assembly is configured to communicate a positive DC arc along one of the arc runners in a first direction away from the stationary contact and is further configured to communicate a negative DC arc along the other arc runner in another direction away from the stationary contact. The arc runner assembly additionally includes a support that is electrically engaged with a conductor of the circuit interrupter on a surface opposite that on which the stationary contact is disposed. The improved arc runner assembly advantageously facilitates extinction of electrical arc and extinguishes both positive and negative DC arcs in a DC application.

A circuit protection device is provided for use with a circuit that includes at least one pair of conductors. The protection device is configured to generate an arc. The protection device includes at least a pair of electrode assemblies electrically coupled to the at least one pair of conductors and a conductor base to support the pair of electrode assemblies. The protection device includes a cover coupled to the conductor base and defining at least one isolation chamber, wherein the electrode assemblies are disposed within the isolation chamber. The protection device includes a containment shield moveably coupled to the cover. The containment shield defines a containment chamber configured to contain charged particles produced by the arc. The containment shield is operative to move relative to the cover in response to a change in pressure produced by the arc within the containment chamber. An isolation assembly is coupled to at least one of the cover and the containment shield and configured to prevent the cover from contacting the containment shield.

Equipment protection systems, arc containment devices, and methods of assembling arc containment devices are disclosed. In one example, an electrical isolation structure includes a conductor base, a cover coupled to the conductor base and defining an isolation chamber, a containment shield disposed on the conductor base within the isolation chamber, and a biasing assembly positioned between the cover and the containment shield. The containment shield defines a containment chamber configured to enclose the plurality of electrode assemblies. The containment shield is configured to at least partially contain the arc products within the containment chamber. The biasing assembly is configured to permit the containment shield to move away from the conductor base to thereby define a gap between the conductor base and the containment shield to enable at least some of the arc gases to vent from the containment chamber.

An electrode assembly for a vacuum interrupter is configured such that supporting members can support most of a contact electrode plate and a supporting electrode plate in an axial direction with coil conductors interposed therebetween. Accordingly, an impact generated between electrode assemblies upon a closing operation of the vacuum interrupter may be evenly distributed onto the supporting members, which may result in preventing each of the electrode plates and the coil conductors from being deformed. Also, the supporting members are inserted into the electrode plates and the coil conductors, thereby effectively preventing a current from flowing via the supporting members. In addition, the supporting member may be wide and large so as to simplify an assembly operation and reduce an assembly time.

Container assemblies can include a first container and a second container, where the second container extends into and is supported by the first container. The first container and the second container can each include a flange around the periphery of an access opening. The flange of the second container is configured to provide support for the second container via engagement with the flange of the first container. In some instances, the second container can extend into and be supported by the first container through engagement of the flange of the second container with the flange of the first container such that a side panel of the first container is not in contact with a corresponding side panel of the second container. The container assembly can also include a lid for retaining the second container in the first container and/or for sealing to the first container and/or the second container.

The present invention provides an assembly for the preparation of a medical device having a porous coating comprising hydrogen peroxide. Particularly interesting medical devices are catheters (such as urinary catheters), endoscopes, laryngoscopes, tubes for feeding, tubes for drainage, guide wires, condoms, urisheaths, barrier coatings e.g. for gloves, stents and other implants, extra corporeal blood conduits, membranes e.g. for dialysis, blood filters, devices for circulatory assistance, dressings for wound care, and ostomy bags. The coating is in particular a hydrophilic coating formed from cross-linked polyvinylpyrrolidone. In one embodiment, the assembly holds a dry catheter element in one compartment of a package and an aqueous hydrogen peroxide solution in another compartment. The solution may also comprise stabilizers, e.g. chelators, and osmolality increasing agents. The catheter for insertion in the urethra is useful for the treatment, alleviation or prophylaxis of microbial infections such as urinary tract infections (UTI).

A catheter assembly including an elongate member having a proximal end and a distal end. The distal end has at least one drainage opening. A hydrophilic coating is provided on at least a portion of the elongate end of the catheter. A fluid containing member is provided and is either arranged on the elongate member or within a separate area of the container. The fluid containing member contains sufficient hydrating fluid to hydrate the coating of the catheter. A container contains the elongate member and the fluid containing member and incorporates at least one foil layer to prevent evaporation of the hydrating fluid. A method of using the catheter includes inserting a catheter into a user's body and draining fluid from the user's body.

A packaging box with test strips is provided for a gripper to grip the test strips, and the gripper has a gripping section and a conductive terminal in the gripping section, and the packaging box includes a main body and a test strip. The main body has an embedded groove including a port with a shape corresponding to the shape of the gripping section, and the port is provided for inserting the gripping section. The test strip has a conductive area defined on a surface of the test strip, and the test strip is contained in the embedded groove, wherein the gripping section is coupled to the port, and the conductive terminal is electrically coupled to the conductive area. With the packaging box, the test strips can be taken out conveniently and quickly.

An input receiver circuit including a single-to-differential amplifier and a semiconductor device including the input receiver circuit are disclosed. The input receiver circuit includes a first stage amplifier unit and a second stage amplifier unit. The first stage amplifier unit amplifies a single input signal in a single-to-differential mode to generate a differential output signal, without using a reference voltage. The second stage amplifier unit amplifies the differential output signal in a differential-to-single mode to generate a single output signal.

A microwave semiconductor amplifier includes a semiconductor amplifier element, an input matching circuit and an output matching circuit. The semiconductor amplifying element includes an input electrode and an output electrode and has a capacitive output impedance. The input matching circuit is connected to the input electrode. The output matching circuit includes a bonding wire and a first transmission line. The bonding wire includes first and second end portions. The first end portion is connected to the output electrode. The second end portion is connected to one end portion of the first transmission line. A fundamental impedance and a second harmonic impedance seen toward the external load change toward the one end portion. The second harmonic impedance at the one end portion has an inductive reactance. The output matching circuit matches the capacitive output impedance of the semiconductor amplifying element to the fundamental impedance of the external load.

A semiconductor package device comprises a radio frequency power transistor having an output port operably coupled to a single de-coupling capacitance located within the semiconductor package device. The single de-coupling capacitance is arranged to provide both high frequency decoupling and low frequency decoupling of signals output from the radio frequency power transistor.

A machining system that includes an ultrasonic machining assembly, wherein the ultrasonic machining assembly further includes a machining tool; a collet adapted to receive the machining tool; and an ultrasonic transducer, wherein the ultrasonic transducer is operative to transmit acoustical vibrations to the machining tool; and a machining apparatus, wherein the machining apparatus is adapted to receive and secure the ultrasonic machining assembly, and wherein the machining apparatus is operative to transmit torque to the machining tool by applying rotary motion to the ultrasonic machining assembly.

An attachment apparatus for a reciprocating tool provides a tool holder having an angled bracket and a guide rod extending from the angled bracket. The guide rod can engage a travel slot on the reciprocating tool. An instrument such as a saw blade can be attached to the angled bracket or guide rod. The guide rod stabilizes the instrument during use. The travel slot can be defined integrally on the reciprocating tool or on an attachment to the tool. In some embodiments, a neck mount assembly is attached to the neck on the reciprocating tool. The neck mount assembly can include a frame and a guide plate. The guide plate can include a travel slot shaped for receiving the guide rod.