A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

The present invention has an object of providing a light-emitting device including an OLED formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the OLED (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided. Owing to a laminate structure, if a crack occurs in one of the barrier films, the other barrier film(s) can prevent moisture or oxygen from penetrating into the organic light emitting layer. The stress relaxing film, which has a smaller stress than the barrier films, is interposed between the barrier films, making it possible to reduce stress of the entire sealing film. Therefore, a crack due to stress hardly occurs.

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

A deployment guiding cloth is wound from an outside in the vehicle width direction, on an outer peripheral portion of a folded side airbag. This deployment guiding cloth extends toward a vehicle front side and is interposed between the side airbag that is partially deployed and a vehicle cabin side portion (a center pillar garnish and a door trim) before the side airbag is fully deployed.

A gliding apparatus includes a gliding board, a first front boot-retaining device for ascending a slope and a second front boot-retaining device for the descent. The first front retaining device comprises a first boot-fastening mechanism, defining a boot pivot axis during the ascent. The second front retaining device comprises a second boot-fastening mechanism, including a movable element incorporating an interface surface capable of contacting a front portion of the boot, the movable element being separate from the first fastening mechanism. The second front retaining device is configurable in a first “inactive” configuration for which the interface surface is away from the boot front portion, and a second “active” configuration for which the interface surface contacts the boot front portion. The first boot-fastening mechanism is capable of cooperating with the movable element of the second front retaining device so as to maintain the second front retaining device in its active configuration.

In an inflated and expanded state of a side airbag, a forwardly extending portion, provided at an upper portion of a rear side bag portion, extends from a side of a shoulder portion of a seated passenger toward a vehicle front side and is disposed above a front side bag portion. A dimension in a vehicle transverse direction of this forwardly extending portion is set to be smaller than that of the front side bag portion, and a vehicle transverse direction inner side surface at an upper end side of the front side bag portion is inclined or curved so as to rise-up while heading toward a vehicle transverse direction outer side. An upper arm portion is pushed-up due to sliding contact with this surface. Even when the seated passenger inertially toward an oblique front of a vehicle, the shoulder portion can be restrained by the forwardly extending portion.

There is provided a behavior control device for the prevention of a jackknife phenomenon of a combination vehicle including a tractor and a trailer pivotably coupled with the tractor, taking into account that the relative pivoting action of the trailer and tractor varies according to the magnitudes of a vehicle speed or a deceleration. The inventive behavior control device comprises a braking-driving force control portion which controls a braking-driving force of the tractor or the trailer to reduce a difference between a yaw rate of the tractor and a yaw rate of the trailer and a judgment portion which judges whether or not a braking-driving force control of the tractor or the trailer by the braking-driving force control portion is necessary; wherein the judgment portion changes based on a vehicle speed or a deceleration of the vehicle the judgment of whether or not the braking-driving force control is necessary.

A deployment guiding cloth is wound from an outside in the vehicle width direction, on an outer peripheral portion of a folded side airbag. This deployment guiding cloth extends toward a vehicle front side and is interposed between the side airbag that is partially deployed and a vehicle cabin side portion (a center pillar garnish and a door trim) before the side airbag is fully deployed.

A tool comprising a tool body having an opening defined by interior walls extending into the tool body and a casing disposed within the opening. The tool further includes a scintillator material disposed within the casing and a first compressive member disposed within the tool body at a first axial location. The first axial location extends for a fraction of a total axial length of the casing and exerts a first radially compressive force at the first axial location.

This invention provides a structure for gunpowder charge for charging gunpowders of different rates in combined fracturing perforation devices. The structure for gunpowder charge is convenient to mount and transport. In one embodiment, said structure for gunpowder charge comprises an inner gunpowder box located between adjacent perforating charges in the charge frame of a perforation device, and an outer gunpowder box attached to the outer wall of the charge frame, wherein said outer gunpowder box comprises one or two box units (2 or 4) with at least one claw at the inner side of said box unit, said claw can be locked into a groove or installation hole of the charge frame, and wherein said inner gunpowder box and said outer gunpowder box are charged with gunpowders of different burning rates.

The invention relates to a device (10; 10a;10b; 10c; 50) for checking pharmaceutical products (1), in particular hard gelatin capsules, by means of at least one radiation source (30; 60) preferably embodied as an X-ray source, and a conveying device which conveys the products (1) in a clocked manner in a radiation area (31) of the radiation source (30; 60). The radiation emitted by the radiation source (30; 60) penetrating the products (1) preferably perpendicular to the longitudinal axes thereof (2), and the radiation is captured on the side of the products (1) opposite the radiation source (30) by means of at least one sensor element (35) which is coupled to an evaluation device (36). The invention is characterized in that the conveyor device is embodied as a conveyor wheel (15; 15a; 51) which can rotate in a stepped manner about an axis (12; 52), and the products (1) are arranged, while being conveyed in the radiation area (31), in receiving areas (28; 37; 56) of the conveyor wheel (15; 5a; 51).

It is an object to provide a photoelectric conversion device whose power consumption and a mounting area are reduced and yield is improved and further to provide a photoelectric conversion device whose number of manufacturing processes and manufacturing cost are reduced. A photoelectric conversion device includes a photoelectric conversion element for outputting photocurrent corresponding to illuminance, and a resistor changing resistance corresponding to illuminance. In the photoelectric conversion device, one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected in series; the other terminal of the photoelectric conversion element is connected to a high power supply potential; the other terminal of the resistor is connected to a low power supply potential; and a light intensity adjusting unit is provided on a light reception surface side of the photoelectric conversion element or the resistor to adjust illuminance.

According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face.

A coal nozzle assembly for a pulverized coal burner includes a diffuser. A flow conditioner also may be used with the assembly. The assembly conditions the coal/air flow before the coal/air flow is introduced to the furnace. The flow conditioner directs the coal into the diffuser where it is swirled to form a fuel rich outer ring disposed about an air rich inner portion before the fuel is delivered to the coal nozzle.

Improved silicon solar cells, silicon image sensors and like photosensitive devices are made to include strained silicon at or sufficiently near the junctions or other active regions of the devices to provide increased sensitivity to longer wavelength light. Strained silicon has a lower band gap than conventional silicon. One method of making a solar cell that contains tensile strained silicon etches a set of parallel trenches into a silicon wafer and induces tensile strain in the silicon fins between the trenches. The method may induce tensile strain in the silicon fins by filling the trenches with compressively strained silicon nitride or silicon oxide. A deposited layer of compressively strained silicon nitride adheres to the walls of the trenches and generates biaxial tensile strain in the plane of adjacent silicon fins.

Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.

Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

The present invention provides a solar-cell-integrated gas production device that can generate a first gas and a second gas by utilizing an electromotive force of a solar cell, and that can supply power to an external circuit by utilizing the same solar cell. The solar-cell-integrated gas production device according to the present invention comprises: a photoelectric conversion part having a light acceptance surface and its back surface; a first electrolysis electrode provided on the back surface of the photoelectric conversion part so as to be capable of being immersed into an electrolytic solution; a second electrolysis electrode provided on the back surface of the photoelectric conversion part so as to be capable of being immersed into the electrolytic solution; and a changeover part, wherein the first electrolysis electrode and the second electrolysis electrode are provided to be capable of electrolyzing the electrolytic solution to generate a first gas and a second gas by utilizing an electromotive force generated by irradiating the photoelectric conversion part with light, and the changeover part makes a changeover between a circuit that outputs the electromotive force, generated by irradiating the photoelectric conversion part outputs the electromotive force, generated by irradiating the photoelectric conversion part with light, to the first electrolysis electrode and the second electrolysis electrode.

Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.

An organic compound and a photoelectric conversion device containing the organic compound are disclosed. The organic compound and device realize high photoelectric conversion efficiency, low dark current and high-speed responsivity. It has been found that when this organic compound and an n-type semiconductor are used in combination, high-speed responsivity can be realized while maintaining high heat resistance, an aspect of which has not been seen when the connection part between a donor part and an acceptor part is a phenylene group.

[Problem] To provide a photovoltaic device capable of generating power whether day or night, without affecting the appearance of a structure or reducing lighting or other functions, and able to inhibit rises in room temperature by converting thermal radiation into electrical energy. [Means to Solve Problems] Provide a photoelectric conversion element 3 with a photovoltaic device 1 on structural members 2a-2d facing the outside of a house or other structure. Power generated by the photoelectric conversion element 3 is extracted via a power extraction unit 4. The power conversion element 3 includes a semiconductor layer 11, conductive layer 20, a metal nanostructure 30 having multiple periodic structures 33, a first electrode 41 and a second electrode 42. The first and second electrodes 41, 42 are separated in the direction of the surface of the photoelectric conversion element 1 with the terminals 71, 81 of the power extraction unit 4 respectively connected.

A separate connection device (40) intended to be inserted between a metal frame (3), of an electrical component (1), and a metal supporting structure (20) in order to connect, electrically and separately, the frame to the supporting structure. The connection device (40) comprises a metal blade manufactured from spring steel which comprises two self-connecting end areas (45, 46) arranged in separate planes and comprising a set of sharp teeth (47) arranged in order to be embedded within the metal material and formed on a folded section of the metal blade so that the sets of teeth (37, 47) extend in opposite directions and in planes intended to intersect the planes of the frame (3) and of the supporting structure (20) when the connection device is mounted.

A conductive paste may include a conductive component and an organic vehicle. The conductive component may include an amorphous metal. The amorphous metal may have a lower resistivity after a crystallization process than before the crystallization process, and at least one of a weight gain of about 4 mg/cm2 or less and a thickness increase of about 30 μm or less after being heated in a process furnace at a firing temperature.

According to example embodiments, a conductive paste includes a conductive component that contains a conductive powder and a titanium (Ti)-based metallic glass. The titanium-based metallic glass has a supercooled liquid region of about 5K or more, a resistivity after crystallization that is less than a resistivity before crystallization by about 50% or more, and a weight increase by about 0.5 mg/cm2 or less after being heated in a process furnace at a firing temperature. According to example embodiments, an electronic device and a solar cell may include at least one electrode formed using the conductive paste according to example embodiments.

A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.

A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

Provided is an organic light emitting device. The organic light emitting device comprising a first light emitting part on a substrate, emitting a first light of a first wavelength, wherein the first light emitting part includes a transparent first electrode, a first organic light emitting layer, and a transparent second electrode sequentially stacked on the substrate, a second light emitting part on the first light emitting part, emitting a second light of a second wavelength, wherein the second light emitting part includes a transparent third electrode, a second organic light emitting layer, and a reflective fourth electrode sequentially stacked on the first light emitting part, and a fluorescent material disposed at least one between the substrate and the first light emitting part, and between the first light emitting part and second light emitting part.

A conveying device includes a first feeder that rotatably supports a roll sheet and feeds the roll sheet to a conveying path, a second feeder that feeds a cut sheet to the conveying path, and a controller that determines whether a sheet fed to the conveying path is the roll sheet or the cut sheet based on the relationship between movement of the sheet fed to the conveying path and rotation of the roll sheet.

A method is disclosed for controlling at least one machining device which is coupled to a machine tool by means of an encoder signal, the machine tool having at least one motion control device. In order to improve the accuracy of the encoder connection, at least one additional variable which characterizes the transport is digitally transmitted from the motion control device to the at least one machining device and is used to correct the encoder signal.

To provide a wire unwinding auxiliary device capable of, compared to a conventional device, effectively preventing an unwound wire material from getting twisted, entangled or flawed. A wire unwinding auxiliary device used for guiding an unwound wire material when unwinding the wire material which is wound in a coiled shape. The device comprises a plurality of rotation members 1a-1e on which the unwound wire material is set to run therethrough, and a non-rotation member 2 provided adjacent to at least a rotation member 1a through which the wire material passes first in the plurality of rotation members 1a-1e, thereby a running path of the wire material is stabilized between the non-rotation member 2 and the rotation member 1a.

A printing apparatus includes: a motor which drives a shaft of a roll body around which a medium is wound, in the feeding direction of the medium; a transport roller which transports the medium fed from the roll body; and a control section which supplies electric power for rotating the roll body to the motor, wherein the electric power that the control section supplies to the motor at the time of the start of the feeding of the medium is larger when the diameter of the medium that is wound around the roll body is R2 (

A debris sweep and dry assist device is for use with a strapping machine. The debris sweep and dry assist device is positioned between the strapping machine and an associated strap supply. The device includes a body having a strap inlet and a strap outlet and defining a strap path therethrough. The body has a first wall at about the strap inlet and a second wall at about the strap outlet. The body has a first manifold and a plurality of first branches extending between the first manifold and the first wall to provide a plurality of flow paths from the first manifold to the environs through the first branches. A compressed is gas directed into the first manifold and flows out of the first branches, and is directed onto strap material at a location at about the strap inlet.

The device (100) is destined to receive flanked continuous strips (1, 2) from an arrival line (L), and feed them towards a transversal cutting station (SR). The device (100) comprises: a basin (3), associated to a terminal part of the arrival line (L), destined to enable formation, in each of the strips (1, 2) of a free loop (A1, A2) in a downwards direction; deviator organs (4), at a 45° angle, provided downstream of the basin (3), destined to guide the strips (1, 2) such as to orientate them perpendicularly to the arrival direction, horizontally centered and correctly staggered in height such as to enter the transversal cutting station (SR).

In a web printer, tension on the moving web is controlled by monitoring the tension on the web between two rollers and selectively operating an actuator driving the second roller to restore the tension to an acceptable range. The operation of the actuator includes modulating the speed at which the second roller is driven.

A device for detecting a PWM wave, comprising: a PWM wave generating module, configured to generate the PWM wave; a detecting module coupled to the PWM wave generating module, configured to receive the PWM wave and to determine an electric level of the PWM wave; a timer coupled to the detecting module, configured to start a counting when the detecting module receives the PWM wave, and to interrupt the counting when the counting reaches a predetermined value, the detecting module determining whether the electric level of the PWM wave is a high electric level or a low electric level when the counting is interrupted; and a calculating module coupled to the detecting module, configured to calculate a duty ratio of the PWM wave based on a number of high electric level and a number of low electric level of the PWM wave determined within one period of the PWM wave.

A device for mixing multiple (N) pulse density modulated (PDM) bit streams of a bit rate, the device comprises an input logic, an error accumulation circuit, an error correction circuit and an adder of more than N bits; wherein the device is arranged to output an output PDM bit stream that represents a mixture of the multiple input PDM bit streams; wherein the output PDM bit stream comprises a plurality of output PDM bits, wherein a certain output PDM bit of a plurality of output PDM bits that form the output PDM bit stream is generated during a certain clock cycle; wherein the input logic is arranged to select, during each fraction of the certain clock cycle, a current bit of a selected PDM bit stream, wherein different PDM bit streams are selected during different fragments of the certain clock cycle; wherein the error accumulation circuit is arranged to store intermediate values during a first fraction till a penultimate fraction of the certain clock signal and to store a last value during a last fraction of the certain clock signal.

Provided is a method of generating a driving signal for driving a dual mode supply modulator for a power amplifier. The method includes obtaining an envelope of a complex baseband signal to be transmitted, comparing the envelope of the complex signal with a preset threshold value, when a current envelope of the complex signal is the preset threshold value or greater or when there is a result having the preset threshold value or greater in previous N comparisons, outputting a digital board output signal configured with a first logic level through a digital-to-analog converter; and when the current envelope of the complex signal is smaller than the preset threshold value and when there is no result having the preset threshold value or greater in the previous N comparisons, outputting a digital board output signal configured with a second logic level through the digital-to-analog converter.

A transmission device for transmitting a signal in a wireless communication system is provided. The transmission device includes: a serial-to-parallel converter configured to convert an input serial bit stream into a parallel bit stream having three bits; and a phase rotation symbol mapper configured to map the parallel bit stream to a symbol having phase rotation characteristics, wherein when the parallel bit stream includes first to third bits, the phase rotation symbol mapper maps the second and third bits to a complex variable and sequentially maps a real number part and an imaginary number part of the complex variable to the front part and the rear part of a symbol in this order or to the rear part and the front part of the symbol in this order.

A modulation method is provided. The modulation method includes the steps of receiving multiple sinusoidal signals, obtaining the maximum value of the sinusoidal signals, obtaining the median value of the sinusoidal signals, and obtaining the minimum value of the sinusoidal signals within a period to generate a difference between the maximum value and the minimum value, generating a difference according to an upper limit and a lower limit of a predetermined comparison value, and comparing the two differences to generate an optimized modulation signal.

The present invention relates to a digital modulation method and a corresponding modulator. The modulator comprises a transcoder (110) followed by a FIFO register (120) and a 2-PSK modulator (130). The transcoder codes a binary word of fixed size into a code word of variable size using a transcoding table. The transcoding table codes at least one first binary word, leading to a first number of phase transitions at the output of the modulator, into a second word of size greater than that of the first word, leading to, at the output of the modulator, a second number of phase transitions less than the first number of phase transitions.