It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Methods for fabricating integrated circuits include fabricating a logic device on a substrate, forming an intermediate semiconductor substrate on a surface of the logic device, and fabricating a capacitor-less memory cell on the intermediate semiconductor substrate. Integrated circuits with capacitor-less memory cells formed on a surface of a logic device are also disclosed, as are multi-core microprocessors including such integrated circuits.

Disclosed is a semiconductor device including an oxide semiconductor film. A first oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 15 nm is formed over a gate insulating layer. First heat treatment is performed so that crystal growth from a surface of the first oxide semiconductor film to the inside thereof is caused, whereby a first crystal layer is formed. A second oxide semiconductor film with a thickness greater than that of the first oxide semiconductor film is formed over the first crystal layer. Second heat treatment is performed so that crystal growth from the first crystal layer to a surface of the second oxide semiconductor film is caused, whereby a second crystal layer is formed. Further, oxygen doping treatment is performed on the second crystal layer.

To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

A method for producing a Ga-containing group III nitride semiconductor having reduced threading dislocation is disclosed. A buffer layer in a polycrystal, amorphous or polycrystal/amorphous mixed state, comprising AlGaN is formed on a substrate. The substrate having the buffer layer formed thereon is heat-treated at a temperature higher than a temperature at which a single crystal of a Ga-containing group III nitride semiconductor grows on the buffer layer and at a temperature that the Ga-containing group III nitride semiconductor does not grow, to reduce crystal nucleus density of the buffer layer as compared with the density before the heat treatment. After the heat treatment, the temperature of the substrate is decreased to a temperature that the Ga-containing group III nitride semiconductor grows, the temperature is maintained, and the Ga-containing group III nitride semiconductor is grown on the buffer layer.

A microelectronic assembly and method of making, which includes a first microelectronic element (including a substrate with first and second opposing surfaces, a semiconductor device, and conductive pads at the first surface which are electrically coupled to the semiconductor device) and a second microelectronic element (including a handler with first and second opposing surfaces, a second semiconductor device, and conductive pads at the handler first surface which are electrically coupled to the second semiconductor device). The first and second microelectronic elements are integrated such that the second surfaces face each other. The first microelectronic element includes conductive elements each extending from one of its conductive pads, through the substrate to the second surface. The second microelectronic element includes conductive elements each extending between the handler first and second surfaces. The conductive elements of the first microelectronics element are electrically coupled to the conductive elements of the second microelectronics element.

A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

A semiconductor device having favorable electric characteristics and a manufacturing method thereof are provided. A transistor includes an oxide semiconductor layer formed over an insulating layer, a source electrode layer and a drain electrode layer which overlap with part of the oxide semiconductor layer, a gate insulating layer in contact with part of the oxide semiconductor layer, and a gate electrode layer over the gate insulating layer. In the transistor, a buffer layer having n-type conductivity is formed between the source electrode layer and the oxide semiconductor layer and between the drain electrode layer and the oxide semiconductor layer. Thus, parasitic resistance is reduced, resulting in improvement of on-state characteristics of the transistor.

A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.

A protective film to a polarizer including a cellulose acylate and satisfying the following requirement (1) or (2): (1): The surface of the film has a pH of from 3.0 to 4.5.(2): The surface of the film has a pH of more than 4.5 and at most 6.0, and the film has a moisture permeability of at least 2800 g/m2·day.

A sensor substrate includes a blocking pattern disposed on a base substrate, a first electrode disposed on the base substrate and overlapping the blocking pattern, the first electrode including a plurality of first unit parts arranged in a first direction, each of the first unit parts including a plurality of lines connected to each other in a mesh-type arrangement, a color filter layer disposed on the base substrate, a plurality of contact holes defined in the color filter layer and exposing the first unit parts, and a bridge line between and connected to first unit parts adjacent to each other in the first direction, through the contact holes.

An opposed substrate (9') comprises: a substrate (1); a static electricity protective electrode (2), a bridging electrode (4) and a touch induction electrode (6) comprising a plurality of sub-units sequentially formed on the substrate (1), wherein the distribution of the static electricity protective electrode (2) on the substrate (1) corresponds to dummy regions between sub-units, and the static electricity protective electrode (2), the bridging electrode (4) and the touch induction electrode (6) are insulated from each other. The opposed substrate (9') has a good touching effect. A method for manufacturing the opposed substrate, and a liquid crystal display touch panel are also disclosed.

In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

A liquid crystal display device includes a first substrate, a first electrode on the first substrate, a second substrate opposed to the first substrate, and a second electrode on the second substrate. The second electrode corresponds to the first electrode. The liquid crystal display device also includes a liquid crystal structure between the first electrode and the second electrode. The liquid crystal structure includes a plurality of liquid crystal molecules and at least one movement control member. The movement control member in the liquid crystal structure restricts a movement of the liquid crystal molecules.

The present invention provides an optical compensated bending (OCB) mode liquid crystal display (LCD) panel and a method for manufacturing the same. The method comprises the following steps: forming alignment layers on substrate, respectively; forming a liquid crystal layer between the alignment layers to form a liquid crystal cell; applying an electrical signal across the liquid crystal cell; and irradiating light rays to or heating the liquid crystal cell, so as to form a first polymer alignment layer and a second polymer alignment layer, respectively. The present invention can reduce a phase transition time of liquid crystal molecules from a splay state to a bent state.

A display device uses a multilayer film (104), which reflects (red) light having wavelengths between about 600 and 800 nm at a 60 degree angle of incidence (114), to protect a liquid crystal panel (102) from heat and sun damage. The film (104) transmits light of the visible band with a wavelength between about 420 and 650 nm at normal incidence (116). The outermost surface (106) of the film (104) may be a hard coat (124). A metal oxide layer (120) and a metal layer (130) may be included to reflect IR light greater in wavelength than about 850 nm.

Disclosed herein is a liquid crystal display device including a plurality of pixels each having a reflecting section and a transmitting section, the pixels each including a plurality of sub-pixels resulting from alignment division, the liquid crystal display device including: an element layer formed on a substrate; an insulating film formed on the substrate so as to cover the element layer; a pixel electrode formed on the insulating film so as to be connected to the element layer; a gap adjusting layer formed on the insulating film on the element layer including a region of connection between the element layer and the pixel electrode; and a dielectric formed on a connecting part for making an electric connection between the sub-pixels.

A liquid crystal display device includes a liquid crystal display element including a first alignment film and a second alignment film and a liquid crystal layer that is provided between the first alignment film and the second alignment film, wherein the first alignment film includes a compound in which a polymer compound that includes a cross-linked functional group or a polymerized functional group as a side chain is cross-linked or polymerized, the second alignment film includes the same compound as the compound that configures the first alignment film, and the formation and processing of the second alignment film is different from the formation and processing of the first alignment film and when a pretilt angle of the liquid crystal molecules which is conferred by the first alignment film is θ1 and a pretilt angle of the liquid crystal molecules which is conferred by the second alignment film is θ2, θ1>θ2.

The present invention provides a display device substrate, a display device substrate manufacturing method, a display device, a liquid crystal display device, a liquid crystal display device manufacturing method and an organic electroluminescent display device that allow suppressing faults derived from occurrence of gas and/or bubbles in a pixel region. The present invention is a display device substrate that comprises: a photosensitive resin film; and a pixel electrode, in this order, from a side of an insulating substrate. The display device substrate has a gas-barrier insulating film, at a layer higher than the photosensitive resin film, for preventing advance of a gas generated from the photosensitive resin film, or has a gas-barrier insulating film, between the photosensitive resin film and the pixel electrode, for preventing advance of gas generated from the photosensitive resin film.

Embodiments of the disclosed technology relate to a color filter substrate and a method of manufacturing the same. The color filter substrate comprises a base substrate having a black matrix pattern thereon, the black matrix pattern having a plurality of openings; and a plurality of color filter layers in different colors, disposed on the base substrate and located at the openings of the black matrix pattern, the color filter layers being glass layers in different colors.

A liquid crystal display panel, including: a pixel electrode formed on a first substrate; an alignment layer formed on the pixel electrode, wherein the alignment layer includes an alignment layer material and aligns first liquid crystal molecules in a direction substantially perpendicular to the pixel electrode; and a photo hardening layer formed on the alignment layer, wherein the photo hardening layer includes a photo hardening layer material and aligns second liquid crystal molecules to be tilted with respect to the pixel electrode, wherein the alignment layer material and the photo hardening layer material have different polarities from each other.

A liquid crystal display capable of realizing a high transmittance while maintaining favorable voltage response characteristics, and a method of manufacturing the same are provided. The liquid crystal display includes: a liquid crystal layer; a first substrate and a second substrate arranged to face each other with the liquid crystal layer in between; a plurality of pixel electrodes provided on a liquid crystal layer side of the first substrate; and an opposite electrode provided on the second substrate to face the plurality of pixel electrodes. One or both of a face on the liquid crystal layer side of the pixel electrode, and a face on the liquid crystal layer side of the opposite electrode includes a concavo-convex structure.

An optical element includes at least two stacked birefringent layers having respective local optical axes that are rotated by respective twist angles over respective thicknesses of the at least two layers, and are aligned along respective interfaces between the at least two layers. The respective twist angles and/or the respective thicknesses are different. The at least two stacked birefringent layers may be liquid crystal polymer optical retarder layers. Related devices and fabrication methods are also discussed.

According to one embodiment, a first gene encodes a reporter protein. The first gene is disposed at the downstream of the gene promoter. A second gene is disposed at the downstream of the gene promoter and encodes a replication origin-binding protein. An internal ribosome entry site is disposed between the first gene and the second gene. The transcription termination signal sequence encodes a signal for terminating the transcription of the first gene and the second gene. A replication origin sequence is recognized by the replication origin-binding protein.

A method of expanding and maintaining human embryonic stem cells (ESCs) in an undifferentiated state by culturing the ESCs in a suspension culture under culturing conditions devoid of substrate adherence is provided. Also provided are a method of deriving ESC lines in the suspension culture and methods of generating lineage-specific cells from ESCs which were expanded in the suspension culture of the present invention.

Thrombospondin 1 (TSP-1), TSP-2, interleukin 17B receptor (IL-17BR) and heparin-binding epidermal growth factor-like growth factor (HB-EGF) associated with stem cell activity and use thereof.

Methods of washing adherent cells, capable of effectively suppressing cell death due to proteolytic enzyme treatment for detaching the adherent cell from a culture vessel and subsequent cell treatment; cell-washing solutions used for the washing method; methods of producing cell suspensions for transplantation using the cell-washing solution; and kits comprising the cell-washing solution. Trehalose or its derivative or a salt thereof is added to physiological aqueous solutions to prepare cell-washing solutions containing trehalose or its derivative or a salt thereof as an active ingredient. The cell-washing solutions can be used to wash adherent cells before detaching the adherent cells from a culture vessel by proteolytic enzyme treatment to suppress cell death due to the proteolytic enzyme treatment. The concentration of trehalose applied to the cell-washing solution may be a concentration capable of suppressing the cell death due to the proteolytic enzyme treatment, such as 0.1 to 20 (w/v) %.

A multi-channel system and methods for sorting particles according to one or more characteristics of the particles. The system includes multiple flow cytometry units, each unit can have a nozzle for producing a fluid stream containing a desired population of particles in a mixture of particles. Each of the units may be operable to sort said desired population of particles by interrogating the fluid stream with a beam of electromagnetic radiation and classifying particles based on one or more characteristics of the particles. The system also includes a common fluid delivery system for delivering sheath fluid to each flow cytometer unit for producing respective fluid streams.

Methods and agents for reducing a level of an acetylated Tau polypeptide in a cell are provided. Methods for treating a tauopathy in an individual are also provided. Also provided is a method for diagnosing a cognitive impairment disorder in an individual. Methods for identifying an agent suitable for treating a tauopathy are also provided.

The invention is directed to a single-step method for rapidly and efficiently preparing protein-polymer conjugates, including an insulin-polymer conjugate. According to the method of the present invention, a protein and hydrophilic polymer are contacted in the presence of at least one organic solvent and at least one metal chelator, under conditions that promote the formation of a conjugate of the protein and polymer. Thus, the invention is directed to the site-specific modification of selected proteins, such as insulin, with poly(ethylene glycol) at residue PheB1. The invention also provides a pharmaceutical formulation for encapsulating the conjugate in a biodegradable polymer.

Devices and methods are provided for reducing matrix effects in protein precipitated bioanalytical samples comprising: a support, and a sorbent associated with the support capable of binding matrix interfering agents present in the bioanalytical sample, wherein the device further comprises filtering means for removing precipitated protein particles. The filtering means is a size exclusion filter or a polymeric or inorganic monolith having a maximum pore size less than or equal to the diameter of the particles to be removed from the sample, and can be integral with the sorbent or associated with the sorbent. The sorbent is characterized by sufficient selectivity between the matrix interfering agents and analytes of interest to provide retention of the matrix interfering agents while providing elution of the analytes of interest (e.g., a reversed phase or a polar modified reversed phase). Typical devices incorporating these features include luer syringe filters, individual filter cartridges, multiwell plates, pipette tips, or inline columns for multiple or single use.

The invention relates to methods and compositions for identifying and selecting maize plants with enhanced resistance to northern leaf blight. Maize plants generated by the methods of the invention are also a feature of the invention.

Isolated polynucleotides and polypeptides and recombinant DNA constructs particularly useful for altering agronomic characteristics of plants under nitrogen limiting conditions, compositions (such as plants or seeds) comprising these recombinant DNA constructs, and methods utilizing these recombinant DNA constructs. The recombinant DNA construct comprises a polynucleotide operably linked to a promoter functional in a plant, wherein said polynucleotide encodes an LNT1 polypeptide.

This invention provides recombinant DNA constructs and methods for manipulating expression of a target gene that is regulated by a small RNA, by interfering with the binding of the small RNA to its target gene. More specifically, this invention discloses recombinant DNA constructs encoding cleavage blockers, 5-modified cleavage blockers, and translational inhibitors useful for modulating expression of a target gene and methods for their use. Further disclosed are miRNA targets useful for designing recombinant DNA constructs including miRNA-unresponsive transgenes, miRNA decoys, cleavage blockers, 5-modified cleavage blockers, and translational inhibitors, as well as methods for their use, and transgenic eukaryotic cells and organisms containing such constructs.

The present invention comprises methods and systems for manipulation of media and particles, whether inert materials or biomaterials, such as cells in suspension cell culture. The methods and systems comprise use of an apparatus comprising a rotating chamber wherein the actions of the combined forces fluid flow force and centrifugal force form a fluidized bed within the rotating chamber.

The present invention relates to a novel method for analyzing nucleic acid sequences based on real-time detection of DNA polymerase-catalyzed incorporation of each of the four nucleotide bases, supplied individually and serially in a microfluidic system, to a reaction cell containing a template system comprising a DNA fragment of unknown sequence and an oligonucleotide primer. Incorporation of a nucleotide base into the template system can be detected by any of a variety of methods including but not limited to fluorescence and chemiluminescence detection. Alternatively, microcalorimetic detection of the heat generated by the incorporation of a nucleotide into the extending template system using thermopile, thermistor and refractive index measurements can be used to detect extension reactions.

An automated method for detecting the presence of a nucleic acid in a sample, where the method is performed within a housing of a self-contained, stand-alone analyzer. The method includes purifying the nucleic acid after it has been immobilized on a magnetically-responsive solid support. A pipette of the analyzer is used to form a reaction mixture comprising the purified nucleic acid and all reagents required to perform a nucleic acid amplification. Amplification products are synthesized that include a nucleotide sequence contained in the nucleic acid or the complement of the nucleic acid. The amplification products are exposed to a probe in a mixture, where the probe forms a hybrid with one of the amplification products. The formation of the hybrid in the mixture provides an indication of the presence of the nucleic acid in the sample.

In one aspect, there is provided a cell culturing substrate including: a cell culture surface having a film attached thereto, wherein the film includes one or more plasma polymerized monomers; and a coating on the film-coated surface, the coating deposited from a coating solution comprising one or more extracellular matrix proteins and an aqueous solvent, where the total extracellular matrix protein concentration in the coating solution is about 1 ng/mL to about 1 mg/mL.

The present invention relates, in general, to gene expression and, in particular, to a method of inhibiting the expression of a target gene and to constructs suitable for use in such a method.

[Problem to be Solved] The importance of sugar chains having α2,3- or α2,6-linked sialic acid at their non-reducing ends is known. Industrial production has been demanded for these sugar chain compounds. Particularly, the production of glycoprotein drugs or the like inevitably requires producing in quantity sugar chains having homogeneous structures by controlling the linking pattern (α2,6-linkage or α2,3-linkage) of sialic acid. Particularly, a triantennary or tetraantennary N-type complex sugar chain having sialic acid at each of all non-reducing ends is generally considered difficult to chemically synthesize. There has been no report disclosing that such a sugar chain was chemically synthesized. Furthermore, these sugar chains are also difficult to efficiently prepare enzymatically.[Solution]The present inventors have newly found the activity of sialyltransferase of degrading sialic acid on a reaction product in the presence of CMP and also found that formed CMP can be degraded enzymatically to thereby efficiently produce a sialic acid-containing sugar chain. The present inventors have further found that even a tetraantennary N-type sugar chain having four α2,6-linked sialic acid molecules, which has previously been difficult to synthesize, can be prepared at high yields by one-pot synthesis comprising the elongation reaction of a biantennary sugar chain used as a starting material without performing purification after each enzymatic reaction.

A seat cushion, in particular for an aircraft seat, the seat cushion comprising a seat part having a receiving surface adapted to receive a person and a reinforcing part supporting the seat part, wherein at least the reinforcing part contains expanded polypropylene (EPP), preferably comprising fire retardant properties. The invention further relates to a method for manufacturing such a seat cushion, a seat comprising such a seat cushion and a vehicle comprising such a seat.

A plurality of varactors are coupled via a first electrode to a shared terminal that in turn can operably couple to a source of control voltage. A second electrode for each varactor couples to a corresponding switch, where each switch couples to at least two different voltage levels. So configured, the second electrode of each varactor can be individually connected to either of two voltage levels. This can be leveraged to control, in coarse steps, the overall aggregate effective capacitance presented by these components. At least some of these varactors can have differing corresponding capacitances, the specific values of which can be selected in order to facilitate relatively equal spacing and substantially equal rates of reactance change versus the control voltage value between aggregate-capacitive reactance ranges as correspond to differing settings for the switches at various levels for the control voltage source.

An embodiment of the present invention provides an apparatus, comprising at least one anti-parallel pair VVC network comprised of two parallel VVCs with one biased in the opposite polarity of the other and at least one anti-series VVC network comprised of two VVCs configured in series, one biased in the opposite polarity of the other such that the resulting AC capacitive variations produce a desired capacitance variation.

A communication module is provided in which its characteristic of separation between its first and second tuner units is improved. The module is equipped with a circuit board having a first main surface, and a second main surface opposite to the first main surface; a first amplifier arranged on the first main surface, for amplifying a first signal; a first mixer arranged on the first main surface, for converting a signal supplied from the first amplifier to an intermediate-frequency signal; a second amplifier for amplifying a second signal; and a mixer for converting a signal supplied from the second amplifier to an intermediate-frequency signal, both arranged on the second main surface of the circuit board.

A system includes a filter and a tuner formed on an integrated circuit. The filter receives an input signal comprising a first number of channels and communicates an intermediate output signal comprising a second number of channels less than the first number of channels. The tuner is coupled to the filter and receives the intermediate output signal and communicates an output signal comprising a third number of channels less than the second number of channels.

A band-pass filter device includes: a plurality of band-pass filter elements on a principal plane of a substrate; wherein the band-pass filter elements correspond to a plurality of respective channels divided by frequency regions, and each have a plurality of piezoelectric resonators. Each of the piezoelectric resonators includes a piezoelectric film whose periphery is supported by the substrate, a first electrode formed on a lower surface of the piezoelectric film, a second electrode formed on an upper surface of the piezoelectric film and formed in a state of overlapping at least a part of the first electrode with the piezoelectric film interposed between the second electrode and the first electrode, a lower space formed between the substrate and the piezoelectric film, and an upper space formed over the piezoelectric film.