icon 240 Basic Icons Vector Freebie By feedproxy.google.com Published On :: Sat, 30 Dec 2017 19:53:50 +0000 Flat design is everywhere. Nowadays aesthetics is a lot more simple. No more glossy buttons or gradients background, or what a about the shiny table effect every client asked for?.It is all gone now. In favor of a more “undesigned” look a back to basics trend. Following that idea the guys at your favorite resources … 240 Basic Icons Vector Freebie Read More » Full Article Freebies
icon What is a Favicon? [+4 Tips for Creating an Impactful Favicon] By feedproxy.google.com Published On :: Thu, 14 Nov 2019 15:40:14 +0000 When you bookmark pages on the web, it’s challenging to remember the name of the page. As you dive back into your bookmarks to find it, you see a small icon next to the page. You recognize the icon and realize it’s the website you viewed prior. This icon, known as a favicon, is small, […] The post What is a Favicon? [+4 Tips for Creating an Impactful Favicon] appeared first on WebFX Blog. Full Article Web Design
icon Lilac City Comicon 2020 moves to October By www.inlander.com Published On :: Fri, 01 May 2020 12:44:28 -0700 Noting that safety of its fans and vendors is always a priority, the folks behind Lilac City Comicon announced Friday that this year's event would move from its original June dates to Oct. 11-12 at the Spokane Convention Center. Anyone who bought tickets for the original June 6-7 comicon will be able to use those tickets at the rescheduled event, or refunds will be available from the businesses where tickets were bought, once those businesses are able to reopen.… Full Article Arts & Culture
icon Preparation of silicon-bridged metallocene compounds By www.freepatentsonline.com Published On :: Tue, 21 Feb 2006 08:00:00 EST A process for obtaining silicon-bridged metallocene compounds comprising the following steps: a) reacting, at a temperature of between −10° C. and 70° C., the starting ligand with about 2 molar equivalents of an alkylating agent;b) after the reaction has been completed, adding at least 2 molar equivalents of an alkylating agent that can be also different from the first one; andc) reacting, at a temperature of between −10° C. and 70° C., the product obtained from step b) with at least 1 molar equivalent of a compound of formula ML's, wherein M is a transition metal; s is an integer corresponding to the oxidation state of the metal; and L' is an halogen atom selected from chlorine, bromine and iodine. Full Article
icon Thick film silver paste and its use in the manufacture of semiconductor devices By www.freepatentsonline.com Published On :: Tue, 05 May 2015 08:00:00 EDT The present invention is directed to an electroconductive silver thick film paste composition comprising Ag, a glass frit and rhodium resinate, Cr2O3 or a mixture thereof all dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The paste is particularly useful for forming a tabbing electrode. Full Article
icon Semiconductor nanoparticles and method for producing same By www.freepatentsonline.com Published On :: Tue, 12 May 2015 08:00:00 EDT Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10−4 mol and the molar ratio of ions is Cu:Zn:Sn=2:1:1, and 2.0 cm3 of oleylamine is added to prepare a mixed solution. Apart from this, 1.0 cm3 of oleylamine is added to 2.0×10−4 mol of sulfur powder to prepare a mixed solution. These mixed solutions are separately heated at 60° C. and mixed at room temperature. The pressure in a test tube is reduced, followed by nitrogen filling. The test tube is heated at 240° C. for 30 minutes and then allowed to stand until room temperature. The resultant product is separated into a supernatant and precipitates by centrifugal separation. The separated supernatant is filtered, methanol is added to produce precipitates. The precipitates are dissolved by adding chloroform to prepare a semiconductor nanoparticle solution. Full Article
icon Device and method for forming on a nanowire made of a semiconductor an alloy of this semiconductor with a metal or a metalloid By www.freepatentsonline.com Published On :: Tue, 19 May 2015 08:00:00 EDT Device for forming, on a nanowire made of a semiconductor, an alloy of this semiconductor with a metal or metalloid by bringing this nanowire into contact with electrically conductive metal or metalloid probes and Joule heating the nanowire at the points of contact with the probes so as to form an alloy such as a silicide. Application to the production of controlled-channel-length metal-silicide transistors. Full Article
icon Set of resin compositions for preparing system-in-package type semiconductor device By www.freepatentsonline.com Published On :: Tue, 28 Apr 2015 08:00:00 EDT Set of compositions for preparing system-in-package type semiconductor device. The composition set consists of underfill composition for preparing underfill part and encapsulation resin composition for preparing resin encapsulation part. 1) A cured product of the underfill composition has a glass transition temperature, Tg, ≧100° C. and is the same with or differs from a Tg of a cured product of the encapsulation resin composition by ≦20° C. 2) Total linear expansion coefficient of the cured product of the underfill composition at a temperature not higher than (Tg−30)° C. and a linear expansion coefficient of the cured product of the encapsulation resin composition at a temperature not higher than (Tg−30)° C. is ≦42 ppm/° C. 3) A ratio of the linear expansion coefficient of the cured product of the encapsulation resin composition to the linear expansion coefficient of the cured product of the underfill composition ranges from 0.3 to 1.0. Full Article
icon Surface treatment of silicone materials By www.freepatentsonline.com Published On :: Tue, 05 May 2015 08:00:00 EDT Disclosed herein are surface treatments for soft silicone gel materials such as silicone intraocular lenses. Full Article
icon Emulsion polymers with improved wet scrub resistance having one or more silicon containing compounds By www.freepatentsonline.com Published On :: Tue, 19 May 2015 08:00:00 EDT Aqueous copolymer dispersions for a variety of uses, including coating compositions or binders for plasters and paints, are disclosed. The aqueous copolymer dispersions may comprise one or more silicon containing compounds, in particular hydrolyzable silane compounds without any additional reactive group. Full Article
icon Epoxy resin composition for encapsulating semiconductor, semiconductor device, and mold releasing agent By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT Disclosed is an epoxy resin composition used for encapsulation of a semiconductor containing an epoxy resin (A), a curing agent (B), an inorganic filler (C) and a mold releasing agent, in which the mold releasing agent contains a compound (D) having a copolymer of an α-olefin having 28 to 60 carbon atoms and a maleic anhydride esterified with a long chain aliphatic alcohol having 10 to 25 carbon atoms. Full Article
icon Phosphorylcholine-based amphiphilic silicones for medical applications By www.freepatentsonline.com Published On :: Tue, 10 Nov 2015 08:00:00 EST Amphiphilic biomimetic phosphorylcholine-containing silicone compounds for use in both topical and internal applications as components in biomedical devices. The silicone compounds, which include zwitterionic phosphorylcholine groups, may be polymerizable or non-polymerizable. Specific examples of applications include use as active functional components in ophthalmic lenses, ophthalmic lens care solutions, liquid bandages, wound dressings, and lubricious and anti-thrombogenic coatings. Full Article
icon Silicone rubber composition curable by radial ray By www.freepatentsonline.com Published On :: Tue, 16 Sep 2014 08:00:00 EDT There is disclosed a silicone rubber composition curable by a radial ray comprising, at least, (A) an organopolysiloxane shown by the following general formula (1), (B) a phenyl ester derivative having an acryl group, (C) a sensitizer sensitized by a radial ray, and (D) a photosensitive dye, wherein each R1, R2, and R3 independently represents a monovalent hydrocarbon group having 1 to 10 carbon atoms; X represents the same or different monovalent organic group having an acryl group or a methacryl group. As a result, there is provided a silicone rubber composition capable of being cured by irradiation of a radial ray whereby showing excellent adhesion with various substrates, capable of forming a cured film, and capable of easily distinguishing whether it is cured or not by observing appearance when not irradiated with a radial ray. Full Article
icon Silicone hydrogels having a structure formed via controlled reaction kinetics By www.freepatentsonline.com Published On :: Tue, 20 Jan 2015 08:00:00 EST The present invention relates to a process comprising the steps of reacting a reactive mixture comprising at least one silicone-containing component, at least one hydrophilic component, and at least one diluent to form an ophthalmic device having an advancing contact angle of less than about 80°; and contacting the ophthalmic device with an aqueous extraction solution at an elevated extraction temperature, wherein said at least one diluent has a boiling point at least about 10° higher than said extraction temperature. Full Article
icon Silicone rubber composition, silicone rubber molded article, and production method thereof By www.freepatentsonline.com Published On :: Tue, 10 Feb 2015 08:00:00 EST A UV curable silicone rubber composition is provided. The composition does not undergo curing failure, foaming, and other undesirable conditions even if a water-containing inorganic filler such as zeolite were added. A UV curable silicone rubber composition comprising (A) 100 parts by weight of an organopolysiloxane having at least 2 alkenyl groups per molecule represented by the average compositional formula (I): R1aSiO(4-a)/2 (I) (wherein R1 is independently a substituted or unsubstituted monovalent hydrocarbon group, and a is a positive number of 1.95 to 2.05); (B) 1 to 300 parts by weight of an inorganic filler having a water content of at least 0.5% by weight; (C) 0.1 to 50 parts by weight of an organohydrogenpolysiloxane having at least 2 silicon-bonded hydrogen atoms per molecule; and (D) a catalytic amount of a photoactive platinum complex curing catalyst. Full Article
icon Semiconductor memory device and operation method thereof By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT A semiconductor memory device includes a selection signal generation unit configured to generate a plurality of selection signals that are sequentially activated, a path selection unit configured to select a transmission path of sequentially input information data in response to the plurality of selection signals, a plurality of first storage units, each configured to have a first storage completion time and store an output signal of the path selection unit, and a plurality of second storage units, each configured to have a second storage completion time, which is longer than the first storage completion time, and store a respective output signal of the plurality of first storage units. Full Article
icon Methods for producing a dispersion containing silicon dioxide particles and cationization agent By www.freepatentsonline.com Published On :: Tue, 17 Mar 2015 08:00:00 EDT Process for preparing a dispersion comprising silicon dioxide particles and cationizing agents, by dispersing 50 to 75 parts by weight of water, 25 to 50 parts by weight of silicon dioxide particles having a BET surface area of 30 to 500 m2/g and 100 to 300 μg of cationizing agent per square meter of the BET surface area of the silicon dioxide particles, wherein the cationizing agent is obtainable by reacting at least one haloalkyl-functional alkoxysilane, hydrolysis products, condensation products and/or mixtures thereof with at least one aminoalcohol and water; and optionally removing the resulting hydrolysis alcohol from the reaction mixture. Also the process for preparing the dispersion, wherein the cationizing agent comprises one or more quaternary, aminoalcohol-functional, organosilicon compounds of formula III and/or condensation products thereof, wherein Ru and Rv are independently C2-4 alkyl group, m is 2-5 and n is 2-5. Full Article
icon Oil-in-water silicone emulsion composition By www.freepatentsonline.com Published On :: Tue, 12 May 2015 08:00:00 EDT Provided is an oil-in-water silicone emulsion composition that has a low silicone oligomer content, and that can form, even without the use of an organotin compound as a curing catalyst, a cured film that exhibits satisfactory strength and satisfactory adherence to a substrate, through the removal of water fraction. An oil-in-water silicone emulsion composition comprising (A) 100 mass parts of a polyorganosiloxane that contains in each molecule at least two groups selected from the group consisting of a silicon-bonded hydroxyl group, alkoxy group, and alkoxyalkoxy group, (B) 0.1 to 200 mass parts of a colloidal silica, (C) 0.1 to 100 mass parts of an aminoxy group-containing organosilicon compound that has in each molecule an average of two silicon-bonded aminoxy groups, (D) 1 to 100 mass parts of an ionic emulsifying agent, (E) 0.1 to 50 mass parts of a non-ionic emulsifying agent, and (F) 10 to 500 mass parts of water. Full Article
icon Semiconductor device By www.freepatentsonline.com Published On :: Tue, 12 May 2015 08:00:00 EDT A method for bypassing a defective through silicon via x in a group of n adjacent through silicon vias, includes receiving a plurality of relief signals to identify the defective through silicon via x, activating x−1 switch circuits to connect x−1 data circuits to through silicon vias 1 to x−1 in the group of n adjacent through silicon vias, activating n-x switch circuits to connect n-x data circuits to through silicon vias x+1 to n in the group of n adjacent through silicon vias, and activating a switch circuit to connect a data circuit to an auxiliary through silicon via which is adjacent through silicon via n in the group of n adjacent through silicon vias. Full Article
icon Semiconductor device design method and design apparatus By www.freepatentsonline.com Published On :: Tue, 12 May 2015 08:00:00 EDT A relationship between distance from a back bias control section which outputs a control signal for controlling a back bias of a transistor and an amount of noise in the control signal outputted from the back bias control section is found. An increase of jitter corresponding to the amount of the noise in a clock transmitted on a clock path connected to a circuit section (IP macro) is found on the basis of the relationship between the distance from the back bias control section and the amount of the noise. The circuit section and the clock path are placed on the basis of the increase of the jitter and an allowable jitter value for the circuit section. Full Article
icon Method and system for semiconductor design hierarchy analysis and transformation By www.freepatentsonline.com Published On :: Tue, 19 May 2015 08:00:00 EDT A method and apparatus for partitioning of the input design into repeating patterns called template cores for the application of reticle enhancement methods, design verification for manufacturability and design corrections for optical and process effects is accomplished by hierarchy analysis to extract cell overlap information. Also hierarchy analysis is performed to extract hierarchy statistics. Finally template core candidates are identified. This allows to the design to be made amenable for design corrections or other analyses or modifications that are able to leverage the hierarchy of the design since the cell hierarchy could otherwise be very deep or cells could have significant overlap with each other. Full Article
icon Prediction of dynamic current waveform and spectrum in a semiconductor device By www.freepatentsonline.com Published On :: Tue, 19 May 2015 08:00:00 EDT A method for accurately determining the shape of currents in a current spectrum for a circuit design is provided. The method includes determining timing and power consumption characteristics. In one embodiment, timing characteristics are provided through a electronic design automation tool. The timing characteristics yield a current pulse time width. In another embodiment, power consumption characteristics are provided by an EDA tool. The power consumption characteristics yield a current pulse amplitude. The shape of the current pulse is obtained by incrementally processing a power analyzer tool over relatively small time increments over one or more clock cycles while capturing the switching nodes of a simulation of the circuit design for each time increment. In one embodiment, the time increments are one nanosecond or less. Full Article
icon Particle defoamer comprising a silicone emulsion and process for preparing same By www.freepatentsonline.com Published On :: Tue, 05 May 2015 08:00:00 EDT A process for preparing a particle defoamer. The particle defoamer of 55%-75% of a carrier, 15%-35% of a silicone emulsion, 3%-10% of a texturing agent and 2%-10% of a solvent, based on the total weight of the particle defoamer; the process for preparing the particle defoamer is: (1)first adding a carrier A1 into a mixer, and then adding thereto a silicone emulsion B1, and stirring uniformly; (2)adding a carrier component A2 to the mixture obtained in (1), and stirring uniformly; (3)adding a silicone emulsion B2 to the mixture obtained in (2), and, after uniformly stirring, adding the solvent thereto and stirring uniformly; and (4)pelleting and drying by baking the mixture obtained in(3), so as to produce the product. Full Article
icon Processing agent composition for semiconductor surface and method for processing semiconductor surface using same By www.freepatentsonline.com Published On :: Tue, 19 May 2015 08:00:00 EDT The present invention is directed to provide a semiconductor surface treating agent; composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent; composition, comprising [I] a compound generating a fluorine ion in water, [II] a carbon radical generating agent; , [III] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used: (wherein R1 represents a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups; R2 represents a hydrogen atom, a linear, branched or cyclic C1-6 alkyl group, or a linear or branched C1-4 substituted alkyl group having 1 to 3 hydroxyl groups). Full Article
icon Systems and methods for identifying and suggesting emoticons By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT Computer-implemented systems and methods are provided for suggesting emoticons for insertion into text based on an analysis of sentiment in the text. An example method includes: determining a first sentiment of text in a text field; selecting first text from the text field in proximity to a current position of an input cursor in the text field; identifying one or more candidate emoticons wherein each candidate emoticon is associated with a respective score indicating relevance to the first text and the first sentiment based on, at least, historical user selections of emoticons for insertion in proximity to respective second text having a respective second sentiment; providing one or more candidate emoticons having respective highest scores for user selection; and receiving user selection of one or more of the provided emoticons and inserting the selected emoticons into the text field at the current position of the input cursor. Full Article
icon User interface with enlarged icon display of key function By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT To improve the consumer experience with portable electronic devices, a user interface combines the use of capacitive sensors with tactile sensors in an input device. When a user places a finger, stylus, or other input instrument near a given key button, a capacitive sensor causes the display to display temporarily an indication of the function of that key in an enlarged format. The user may then press the associated key button to activate the desired function. In one exemplary embodiment, the capacitive sensor fixes the functionality to the function indicated in the display. In this embodiment, a tactile input applied to any key, whether the correct key, multiple keys, or a single incorrect key, results in activating the function indicated in the display as a result of the capacitive input. Full Article
icon Silicon-sulfur polymer, solid electrolyte and solid-state lithium-ion battery By www.freepatentsonline.com Published On :: Tue, 07 Apr 2015 08:00:00 EDT The present disclosure discloses a silicon-sulfur polymer, a solid electrolyte comprising the silicon-sulfur polymer, and a corresponding solid-state lithium-ion battery. The silicon-sulfur polymer of the present disclosure is a polymer compound comprising both an inorganic backbone-chain structure and an organic side-chain structure, and has the characteristics of both the organic polymer and the inorganic polymer as well as many unique properties. Therefore, the solid electrolyte formed by the silicon-sulfur polymer and the solid-state lithium-ion battery thereof have many good characteristics including a good lithium-ion-conduction capability, better thermal endurance, a wider range of operating temperatures, and better thermostability. Full Article
icon Dual end glycerol (meth) acrylate-modified silicone and making method By www.freepatentsonline.com Published On :: Tue, 05 May 2015 08:00:00 EDT A dual end glycerol (meth)acrylate-modified silicone having formula (I): R1Me2SiO(R22SiO)aSiMe2R1 is novel. R1 is a mixture of 70-95 mol % of a group having formula (i) and 30-5 mol % of a group having formula (ii) wherein R3 is H or methyl, R2 is a monovalent hydrocarbon group which may be halogenated, Me stands for methyl, and a is an integer of 10-300. Full Article
icon Mixtures of silicon-containing coupling reagents By www.freepatentsonline.com Published On :: Tue, 12 May 2015 08:00:00 EDT Mixtures of silicon-containing coupling reagents comprising (mercaptoorganyl)alkylpolyethersilanes containing silanol groups and (mercaptoorganyl)alkylpolyethersilanes free of silanol groups in a weight ratio of from 5:95 to 95:5. The mixtures can be prepared by transesterification and hydrolysis. The mixtures can be used in rubber mixtures. Full Article
icon Organosilicon compounds and their use for producing hydrophilic surfaces By www.freepatentsonline.com Published On :: Tue, 19 May 2015 08:00:00 EDT Compounds of the formula where R1 each individually is identical or different and is a hydrocarbon radical, R2 each individually is hydrogen or a methyl radical, n is an integer from 6 to 11, and m is 0 or 1, with the proviso that the sum of the number of carbon atoms in the three radicals R1 in the compound of the formula (I) is 6 to 24, can be admixed with curable polymer compositions to form products with hydrophilic surfaces, or can be applied to surfaces to render them hydrophilic. Full Article
icon Method for producing organic transistor, organic transistor, method for producing semiconductor device, semiconductor device, and electronic apparatus By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT Provided is a method of producing an organic transistor, including collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode, a solution including a polymer and at least one of compounds represented by General Formulas 1 to 4 and 5 to 7, a compound having a structure represented by General Formula 4, a compound having a structure represented by General Formula 5 or 6, and forming a source electrode and a drain electrode on the organic semiconductor film. (where R is a linear or branched alkyl group) (where R is an alkyl group) (where R is an alkyl group) (where A1 and A2 are represented by Formula 8) (where R is an alkyl group or another substituent). Full Article
icon Voltage-driven intelligent characterization bench for semiconductor By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT A system for testing a plurality of transistors on a wafer having a storage device or personal computer connected via a bus to a plurality of drivers. Each of the voltage drivers having a microcontroller adapted to receive test parameters and provide test data from a plurality of voltage drivers. By utilizing a bus structure, the personal computer can look on one bus for flags indicating test data is available from a driver and receive the data. In addition a bus may be used to provide test parameters to the drivers. In this manner, multiple drivers may be run at the same time incorporating multiple tests. When data is available it is transferred to the personal computer, for providing test parameters to a plurality of drivers, and connected via a second bus for receiving test results from the plurality of drivers. Full Article
icon Polymeric materials for use in metal-oxide-semiconductor field-effect transistors By www.freepatentsonline.com Published On :: Tue, 19 May 2015 08:00:00 EDT Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance. Full Article
icon Low temperature silicon carbide deposition process By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT Methods for formation of silicon carbide on substrate are provided. Atomic layer deposition methods of forming silicon carbide are described in which a first reactant gas of the formula SinHaXb wherein n=1-5, a+b=2n+2, a>0, and X=F, Cl, Br, I; and a second reactant gas of the formula MR3-bYb, wherein R is a hydrocarbon containing substituent, Y is a halide, hydride or other ligand and b=1-3 are sequentially deposited on a substrate and then exposed to a plasma. The process can be repeated multiple times to deposit a plurality of silicon carbide layers. Full Article
icon Apparatuses and methods for fabricating semiconductor packages By www.freepatentsonline.com Published On :: Tue, 12 May 2015 08:00:00 EDT An apparatus for fabricating a semiconductor package may include a mold and a molding plate. The mold may define a mold cavity with the mold being configured to receive a circuit board in the mold cavity, and the circuit board may include a semiconductor chip mounted thereon. A molding plate may be moveable in the mold cavity with the molding plate being configured to adjust a volume of the mold cavity. Related methods are also discussed. Full Article
icon Positive photosensitive resin composition, photosensitive resin film prepared by using the same, and semiconductor device including the photosensitive resin film By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT Disclosed is a positive photosensitive resin composition that includes (A) an alkali soluble resin prepared by a phosphorous-containing diamine represented by the following Chemical Formula 1, (B) a photosensitive diazoquinone compound, and (C) a solvent. A photosensitive resin film prepared using the same and a semiconductor device including the photosensitive resin film are also disclosed. In Chemical Formula 1, each substituent is the same as defined in the detailed description. Full Article
icon Method for forming patterns of semiconductor device by using mixed assist feature system By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT A method for forming patterns of a semiconductor device includes providing a photomask that includes an array of contact holes in an active region, a plurality of first dummy contact holes for restricting pattern distortion of the contact holes in an area outside of the array of the contact holes, a plurality of first assist features for restricting pattern distortion of the first dummy contact holes disposed inside a corresponding one of the first dummy contact holes, and an array of second assist features for additionally restricting pattern distortion of the first dummy contact holes. The array of second assist features is disposed outside of the first dummy contact holes. The method also includes forming an array of contact holes and first dummy contact holes on a wafer by using the photomask as an exposure mask. Full Article
icon Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device By www.freepatentsonline.com Published On :: Tue, 09 Feb 2016 08:00:00 EST A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less. Full Article
icon Polishing pad and production method therefor, and production method for semiconductor device By www.freepatentsonline.com Published On :: Tue, 28 Apr 2015 08:00:00 EDT A polishing pad, having a polishing layer comprising a thermoset polyurethane foam, wherein the polishing layer has an in-plane variation of 12 or less in microrubber A hardness, the variation being obtained by measuring the polishing layer from a polishing surface side of the layer, the thermoset polyurethane foam contains, as raw material components, an isocyanate component and active-hydrogen-containing compounds, and the active-hydrogen-containing compounds comprise a trifunctional polyol having at least one terminated hydroxyl group that is a secondary hydroxyl group, and having a hydroxyl group value of 150 to 1,000 mg KOH/g in an amount of 10 to 50 parts by weight for 100 parts by weight of the active-hydrogen-containing compounds. Full Article
icon Silicone wax emulsion and method of manufacture By www.freepatentsonline.com Published On :: Tue, 14 Apr 2015 08:00:00 EDT Disclosed herein are silicone wax emulsions and methods of manufacturing the same. One method of manufacturing silicone wax emulsions as disclosed herein comprises charging alpha-olefins of C-18 or greater chain length to a heating and mixing vessel along with undecylenic acid and blocking the carboxylic acid of the undecylenic acid with a compound containing a trimethylsilyl group by adding the compound in sufficient quantity and heating as a melt until blocking is complete. While maintaining a melt temperature, a silicone polymer containing methyl hydrogen siloxy units is added, followed by a hydrosilation reaction catalyst to effect a hydrosilation reaction. This results in an acid functional silicone polymer. The acid functional silicone polymer is combined with an emulsifier, and the molten combination is added to a stirred solution of alkaline agent and water that has been heated to a temperature above the silicone wax melting point. This process produces silicone wax emulsions with excellent qualities. Full Article
icon Silicon substrate optimization for microarray technology By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT A micro device includes a substrate and a structure configured to bind to an object or a material, or not to bind to an object or material. The structure has a roughness based on a roughness of the object or material. For example, a microarray includes a substrate and a well positioned in the substrate and configured to bind to a type of bead. The well has a roughness based on a roughness of the type of bead to which the well is configured to bind. The roughness of the well is controlled by controlling a position and number of striations in the side of the well. In another example, a moveable component of a micro device may have a roughness different from a roughness of an adjacent component, to reduce the likelihood of the moveable component sticking to the adjacent component. Full Article
icon Infrared-based metrology for detection of stress and defects around through silicon vias By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT An approach for IR-based metrology for detecting stress and/or defects around TSVs of semiconductor devices is provided. Specifically, in a typical embodiment, a beam of IR light will be emitted from an IR light source through the material around the TSV. Once the beam of IR light has passed through the material around the TSV, the beam will be analyzed using one or more algorithms to determine information about TSV stress and/or defects such as imbedded cracking, etc. In one embodiment, the beam of IR light may be split into a first portion and a second portion. The first portion will be passed through the material around the TSV while the second portion is routed around the TSV. After the first portion has passed through the material around the TSV, the two portions may then be recombined, and the resulting beam may be analyzed as indicated above. Full Article
icon Power converter having semiconductor switching element By www.freepatentsonline.com Published On :: Tue, 19 May 2015 08:00:00 EDT Provided is a configuration in which it is possible to mount an applied voltage suppression circuit configured to prevent voltage breakdown of a semiconductor switching element, and a set voltage thereof can be inspected without damaging an IC or the like of a peripheral circuit. In a power converter having a semiconductor switching element, an applied voltage suppression circuit configured to suppress a voltage applied to the semiconductor switching element and at least one component of constituent components of a driving circuit which causes the semiconductor switching element to be turned off if the component is absent are transferred to and disposed on a slave substrate (separate unit) which is divided from and electrically connected to a master substrate including the semiconductor switching element, the driving circuit, a control circuit, and the like mounted thereon. Full Article
icon Semiconductor device By www.freepatentsonline.com Published On :: Tue, 19 May 2015 08:00:00 EDT A semiconductor device of a three-level inverter circuit with a reduced number of power supplies for driving IGBTs. The semiconductor device includes a series-connected circuit of IGBTs between P and N of a DC power supply and an AC switch element that is connected between a series connection point of the series-connected circuit and a neutral point of the DC power supply. The series-connected circuit and the AC switch element are integrated into one module. The AC switch element is formed by connecting a collector of a first IGBT to which a diode is connected in reverse parallel and a collector of a second IGBT to which a diode is connected in reverse parallel, and an intermediate terminal is provided at a connection point between the collectors. Full Article
icon Graphite crucible for silicon electromagnetic induction heating and apparatus for silicon melting and refining using the graphite crucible By www.freepatentsonline.com Published On :: Tue, 03 Mar 2015 08:00:00 EST Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible. Full Article
icon Graphite crucible for electromagnetic induction melting silicon and apparatus for silicon melting and refining using the graphite crucible By www.freepatentsonline.com Published On :: Tue, 07 Apr 2015 08:00:00 EDT A graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surround by an induction coil, wherein a plurality of first slits are vertically formed through the outer wall and an inner wall of the crucible, and a plurality of second slits are vertically formed from an edge of the disc-shaped bottom of the crucible toward a center of the bottom. Full Article
icon DNA replicon system for high-level rapid production of vaccines and monoclonal antibody therapeutics in plants By www.freepatentsonline.com Published On :: Tue, 20 Aug 2013 08:00:00 EDT Plant viral vectors have great potential in rapid production of proteins, but no simple. Here a geminivirus-based system for high-yield and rapid production of oligomeric protein complexes, including virus-like particle (VLP) vaccines and monoclonal antibodies (mAbs) is described. In particular, a single vector that contains two non-competing replicons for transient expression in Nicotiana benthamiana leaves is described. The correct assembly of these subunit proteins into functional oligomeric structures (VLPs or full-size mAb) is also described. This system advances plant transient expression technology by eliminating the need for non-competing viruses, and thus, enhances the realistic commercial application of this technology for producing multiple-subunit protein complexes. Full Article
icon Lead-free conductive paste composition and semiconductor devices made therewith By www.freepatentsonline.com Published On :: Tue, 26 May 2015 08:00:00 EDT A lead-free conductive paste composition contains a source of an electrically conductive metal, a fusible material, an optional additive, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the lead-free paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and fusible material. Full Article
icon Semiconductor ceramic and resistive element By www.freepatentsonline.com Published On :: Tue, 17 Mar 2015 08:00:00 EDT Provided is a resistive element which has excellent inrush current resistance, and can suppress heat generation in a steady state. The resistive element has an element main body of a semiconductor ceramic in which the main constituent has a structure of R11-xR2xBaMn2O6 in which 0.05≦x≦1.0 when R1 is Nd and R2 is at least one of Sm, Eu and Gd; 0.05≦x≦0.8 when R1 is Nd and R2 is at least one of Tb, Dy, Ho, Er, and Y; 0≦x≦0.4 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Tb, Dy, Ho, and Y; and 0≦x≦1.0 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Sm, Eu, and Gd, but the Sm, Eu, and/or Gd in R1 is different from that in R2. Full Article
icon Semiconductor ceramic and resistive element By www.freepatentsonline.com Published On :: Tue, 12 May 2015 08:00:00 EDT Provided is a resistive element which is excellent in inrush current resistance even in the case of having a surface-mountable small chip shape. The resistive element has an element main body composed of a semiconductor ceramic in which a main constituent thereof is composed of a Mn compound represented by the general formula (Nd1-xMx)yBazMn2O6 (M is at least one rare-earth element selected from Sm, Gd, Eu, Tb, Dy, Ho, Er, and Y), and x, y, and z respectively meet the conditions of: 0.05≦x≦0.4; 0.80≦y≦1.2; and 0.80≦z≦1.2 in the chemical formula. Full Article