The present invention provides a method for manufacturing the N-type TFT, which includes subjecting a light shielding layer to a grating like patternization treatment for controlling different zones of a poly-silicon layer to induce difference of crystallization so as to have different zones of the poly-silicon layer forming crystalline grains having different sizes, whereby through just one operation of ion doping, different zones of the poly-silicon layer have differences in electrical resistivity due to difference of grain size generated under the condition of identical doping concentration to provide an effect equivalent to an LDD structure for providing the TFT with a relatively low leakage current and improved reliability. Further, since only one operation of ion injection is involved, the manufacturing time and manufacturing cost can be saved, damages of the poly-silicon layer can be reduced, the activation time can be shortened, thereby facilitating the manufacture of flexible display devices.

A method of manufacturing a thin film transistor is disclosed. The method of manufacturing the thin film transistor includes: manufacturing a substrate; forming an oxide semiconductor layer on the substrate; forming a pattern including an active layer through a patterning process; forming a source and drain metal layer on the active layer; and forming a pattern including a source electrode and a drain electrode through a patterning process, an opening being formed between the source electrode and the drain electrode at a position corresponding to a region of the active layer used as a channel, wherein the step of forming the pattern including the source electrode and the drain electrode through a patterning process includes: removing a portion of the source and drain metal layer corresponding to the position of the opening through dry etching. The method may also be used to manufacturing a thin film transistor.

A method of forming image sensor packages may include performing a molding process. Mold material may be formed either on a transparent substrate in between image sensor dies, or on a removable panel in between transparent substrates attached to image sensor dies. Redistribution layers may be formed before or after the molding process. Mold material may be formed after forming redistribution layers so that the mold material covers the redistribution layers. In these cases, holes may be formed in the mold material to expose solder pads on the redistribution layers. Alternatively, redistribution layers may be formed after the molding process and the redistribution layers may extend over the mold material. Image sensor dies may be attached to a glass or notched glass substrate with dam structures. The methods of forming image sensor packages may result in hermetic image sensor packages that prevent exterior materials from reaching the image sensor.

A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3'), a semiconductor-layer thin film (4') and a passivation-shielding-layer thin film (5') successively; forming a pattern (5') that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a'); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c') and a drain electrode (4b'). The source electrode (4c') and the drain electrode (4b') are disposed on two sides of the active layer (4a') respectively and in a same layer as the active layer (4a'). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

Manufacturing methods of JFET-type compact three-dimensional memory (3D-MC) are disclosed. In a memory level stacked above the substrate, an x-line extends from a memory array to an above-substrate decoding stage. A JFET-type transistor is formed on the x-line as a decoding device for the above-substrate decoding stage, where the overlap portion of the x-line with the control-line (c-line) is semi-conductive.

A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.

To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

A method of fabricating a semiconductor device includes forming a gate strip including a dummy electrode and a TiN layer. The method includes removing a first portion of the dummy electrode to form a first opening over a P-active region and an isolation region. The method includes performing an oxygen-containing plasma treatment on a first portion of the TiN layer; and filling the first opening with a first metal material. The method includes removing a second portion of the dummy electrode to form a second opening over an N-active region and the isolation region. The method includes performing a nitrogen-containing plasma treatment on a second portion of the TiN layer; and filling the second opening with a second metal material. The second portion of the TiN layer connects to the first portion of the TiN layer over the isolation region.

A method for manufacturing an LDMOS device includes: providing a semiconductor substrate (200), forming a drift region (201) in the semiconductor substrate (200), forming a gate material layer on the semiconductor substrate (200), and forming a negative photoresist layer (204) on the gate material layer; patterning the negative photoresist layer (204), and etching the gate material layer by using the patterned negative photoresist layer (204) as a mask so as to form a gate (203); forming a photoresist layer having an opening on the semiconductor substrate (200) and the patterned negative photoresist layer (204), the opening corresponding to a predetermined position for forming a body region (206); and injecting the body region (206) by using the gate (203) and the negative photoresist layer (204) located above the gate (203) as a self-alignment layer, so as to form a channel region.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.

A method for producing an integrated power transistor circuit includes forming at least one transistor cell in a cell array, each transistor cell having a doped region formed in a semiconductor substrate and adjoining a first surface of the semiconductor substrate on a first side of the semiconductor substrate, depositing a contact layer on the first side, structuring the contact layer to form a contact structure from the contact layer, the contact structure having, in a projection of the cell array orthogonal to the first surface, a first section and, outside the cell array, a second section which connects the first section to an interface structure, and forming an electrode structure on and in direct contact with the first section in the orthogonal projection of the cell array, the electrode structure being absent outside the cell array.

A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP layer formed over the first SiP layer and in the recess, wherein the second SiP layer has a phosphorus concentration higher than that of the first SiP layer.

A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

A magnetoresistive random access memory (MRAM) structure includes a bottom electrode structure. A magnetic tunnel junction (MTJ) element is over the bottom electrode structure. The MTJ element includes an anti-ferromagnetic material layer. A ferromagnetic pinned layer is over the anti-ferromagnetic material layer. A tunneling layer is over the ferromagnetic pinned layer. A ferromagnetic free layer is over the tunneling layer. The ferromagnetic free layer has a first portion and a demagnetized second portion. The MRAM also includes a top electrode structure over the first portion.

An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

An array substrate of organic light-emitting diodes and a method for fabricating the same are provided to narrow an edge frame of product device of organic light-emitting diodes, to shorten the package process time, and to improve the substrate utilization and the production efficiency. The array substrate of organic light-emitting diodes includes a plurality of display panels disposed in an array of rows and columns, wherein at least two adjacent display panels are connected through a frame adhesive, and there is no cutting headroom between at least one side of the at least two adjacent display panels.

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

A tensioning device comprises an elongate member, preferably a band, and a frame having first and second sides. The band has a first end that is attachable to the first side of the frame and a second end that is releasably securable to the second side of the frame. A movable clamping member on the frame secures the second end of the band to the second side of the frame by cinching the second end of the band between an engagement surface on the band and a mating engagement surface on the second side of the frame. A restraining member is provided for restraining the clamping member to a first position spaced from the mating locking surface on the second side of the frame, when the restraining member is in a restraining orientation. The restraining member is movable out of the restraining orientation after the band is tensioned to a predetermined level using the second end. The band is tensioned to the aforementioned predetermined level and is secured to the second side of the frame, so that the band establishes a path of tension along its length that extends linearly between the two ends of the band.

An apparatus and method for carrying and storing a portion of rope is claimed. A portion of rope is braided and wound about two complementary loops. Attached to one complementary loop is a flexible fastener. The flexible fastener can be passed through the second complementary loop and attached to itself. The apparatus can then be worn as a bracelet. When the rope is needed, the person can unwind the rope. After using the rope, the rope can be rewound and then bound with the flexible fastener.

A mountable cable tie with fine adjustment with an elongated strap having a first strap end and a second strap end, the elongated strap having one or more rows of teeth or cross-bars formed crosswise on the elongated strap, and a plurality of holes positioned linear along the median between the one or more rows of teeth, at least one locking buckle positioned proximate the second strap end, the at least one locking buckle having at least one channel and at least one locking tang or pawl positioned within the locking buckle, wherein increased insertion of the first strap end into the locking head decreases the size of the loop of the elongated strap to secure the bundle.

A fastening strap and a manufacturing method thereof are provided. The fastening strap includes a first band and a second band. The first band has a first surface and a second surface. The first surface has a plurality of hooks of special configuration. The second band has a third surface and a fourth surface. The third surface is directly adhered to the second surface of the first band, and the fourth surface has a plurality of loops for being mechanically latched by the hooks on the first surface. The second surface and/or the third surface is printed with at least one pattern. After the first band and the second band are adhered together, the pattern can be seen from the first surface of the first band.

Embodiments of a loop clip used with a golf bag and methods to manufacture a golf bag are generally described herein. Other embodiments of the loop clip may be described and claimed.

A method is used to prepare a body for burial. The method includes placing the body inside a vessel. The body includes bones and tissue. The method further includes subjecting the body to a flow of steam until the bones are free of tissue. In one implementation, the flow of steam has a temperature of about 212 degrees Fahrenheit and a mass flow rate of at least 1000 pounds per hour. The method may further include removing the bones from the vessel.

A method of forming a sheet metal casket comprises providing a sheet metal casket shell having at least a portion of an end wall and at least a portion of a side wall and a round corner between the portion of the end wall and the portion of the side wall, and forming a generally planar corner oriented at about a 45° angle relative to the portion of the end wall and the portion of the side wall.

An apparatus for preserving human or animal remains comprising a burial chamber further comprising a hermetically sealed interior containing gas or water vapor, wherein the gas creates a gas pressure within the hermetically sealed interior, and a vacuum pump, wherein the vacuum pump is in functional communication with the hermetically sealed interior, wherein the vacuum pump operates to evacuate the gas or the water vapor from the hermetically sealed interior, and wherein the vacuum pump is intermittently activated to reduce the gas pressure within the hermetically sealed interior for a desiccating duration.

A modular casket made of lightweight materials is structurally reinforced using a structural sealant along at least the inner surfaces of the side panels, and optionally along at least side edge portions of a base panel to which the side panels are coupled, to stiffen and rigidize the casket against flexion along longitudinal and lateral axes, as well as torsional flexion. The structurally reinforced casket is sealed or more readily sealed against leakage and provides other benefits of structural stiffness and rigidity with relatively small cost and weight penalties.

A method of forming a portion of a sheet metal casket shell comprises supporting a piece of sheet metal on one side with a female die having a center die portion and opposite end die portions configured to pivot relative to the center die portion, supporting the piece of sheet metal on the opposite side with a male die having a center die portion and opposite end die portions, and pivoting the end die portions of the female die relative to the center die portion of the female die to cause the opposite ends of the piece of sheet metal to fold around the end die portions of the male die. The method can be repeated with a second piece of sheet metal thereby forming two shell halves which can be welded together to form the shell.

A concrete burial vault system having a layered construction of castable material encased in an inner liner and an outer casing of a thermoplastic polymer such as polypropylene utilizes the liner and casing as a mold for the concrete and enables monolithic molds with self-supporting securing tabs. This system allows the liner and casing to be manufactured at a central location and then transported to a plurality of use locations to be filled with concrete. The manufacturing method supports the system and provides an assembly advantage.

A decorative carapace for a burial vault including a carapace having a top surface and a substrate having a decorative graphic, the substrate being attached to the top surface of the carapace.

A funeral urn system comprising: a funeral urn defining an urn proximal attachment and a substantially opposed urn distal attachment, the funeral urn including an urn body defining an ashes receiving cavity and an urn aperture leading into the ashes receiving cavity, the funeral urn also including an urn cap selectively securable to the urn body in register with the urn aperture to seal the ashes receiving cavity; and a spear head cap, the spear head cap defining a cap proximal attachment and a substantially opposed cap distal end section tapering in a direction leading away from the cap proximal attachment. The urn proximal and distal attachments are configured and sized to be selectively attachable respectively to the urn distal and proximal attachments of another urn similar to the funeral urn. The urn distal attachment is configured and sized to be selectively attachable to the cap proximal attachment.

A concrete burial vault system having a layered construction of castable material encased in an inner liner and an outer casing of a thermoplastic polymer such as polypropylene utilizes the liner and casing as a mold for the concrete and enables monolithic molds with self-supporting securing tabs. This system allows the liner and casing to be manufactured at a central location and then transported to a plurality of use locations to be filled with concrete. The manufacturing method supports the system and provides an assembly advantage.

The present invention relates to a method to improve the appearance of a corpse by means of the application of specific thanatocosmetic compositions. The invention also relates to the new compositions and to their use in thanato-aesthetics.

Methods and systems for preserving tissues in situ using critical point drying are disclosed. Such methods and systems are particularly applicable to the preservation of a deceased body, such as a deceased person or animal, with or without removal of internal tissues or organs. A fixative can be perfused through the vascular system of the body while blood is removed from the body. The exterior of the body can also be immersed in a bath of fixative. The fixative in the vascular system and the bath can be replaced by subsequent washes of buffer, de-ionized water, and/or alcohol. The alcohol-infused and fixated body can be disposed in a pressure chamber and subjected to a critical point drying process using carbon dioxide. After the critical point drying process, the body is in a preserved state.

An electronic device capable of ejecting a peripheral element is disclosed, including a housing, a first wheel and a driving unit. The housing has a chamber, wherein the peripheral element is stored in the chamber. The first wheel is disposed in the housing, wherein the first wheel contacts the peripheral element. The driving unit is disposed in the housing, the driving unit rotates the first wheel, and the first wheel moves the peripheral element from a first position to a second position.

A dishwasher includes a washing compartment, at least one dishware container, and a guide assembly to allow the dishware container to be moved out of the washing compartment and into the washing compartment. The movement of the dishware container in relation to the washing compartment is cushioned by at least one damping device which is arranged inside the washing compartment.

A bushing is for supporting a movable cylindrical body within a housing, the housing having a central axis, an inner circumferential surface and an annular groove formed in the surface. The bushing includes a plurality of generally arcuate tube segments disposable within the groove and alignable circumferentially about the housing axis so as to form a generally tubular body configured to slidably support the cylindrical body. Preferably, each tube segment is formed of a generally rigid metallic material.

A grommet device and method of using a grommet device is provided. A top structure has a top surface. An aperture having a central axis is positioned interior of the top structure. A sidewall is formed around the aperture and connected to the top structure. The sidewall is positioned substantially perpendicular from the top surface of the top structure. At least two upper protruding structures are connected to the top structure at different locations along the top structure, wherein each of the upper protruding structures extends into the aperture. At least two lower protruding structures extend from the sidewall at different locations along the sidewall, wherein each of the lower protruding structures have a flexing portion extending into the aperture, wherein each of the upper protruding structures are substantially radially aligned with the flexing portion of each of the lower protruding structures, respectively.

A method for mounting a flexible tube associated with braking hydraulics on a bicycle between a braking control member and a braking member. The method provides a mounting cable for use in locating the flexible tube within a bicycle frame element while the ends of the flexible tube are exposed so a respective end can be connected to the control member and the braking member. The method simplifies the insertion process and reduces damage to the flexible tube. A tool for inserting the flexible tube is also provided.

A method of treating a carbon structure is provided. The method may include the step of infiltrating the carbon structure with a ceramic preparation comprising yttrium oxides and zirconium oxides. The carbon structure may be densified by chemical vapor infiltration (CVI) and heat treated to form yttrium oxycarbides and/or carbides and zirconium oxycarbides and/or carbides. Heat treating the carbon structure may comprise a temperature ranging from 1000° C. to 1600° C.

A method for forming a vehicular brake rotor involving loading a shaped metal substrate with a mixture of metal alloying components and ceramic particles in a dieheating the contents of the die while applying pressure to melt at least one of the metal components of the alloying mixture whereby to densify the contents of the die and form a ceramic particle-containing metal matrix composite coating on the metallic substrate; and cooling the resulting coated product.

A piston manufacturing device includes a first forming device (42) configured to form an annular groove (61) in a piston (11), and a second forming device (52) configured to press an edge (15) of an opening (14) of the piston (11) toward other end side in an axial direction of the piston (11) and to form a thick section (65) extruded from an inner circumferential surface (12b) arranged between the edge (15) and the groove (61) toward an axial center side of the piston (11), wherein a recessed section (53) is formed at a portion of the second forming device (52) that is arranged to abut the edge (15) so that an inner circumferential side of the edge (15) is plastically deformed toward the other end side in an axial direction of the piston (11).

A railcar brake beam assembly including a brake beam formation having a tension member, a compression member and strut, and with the strut defining an axis for the brake beam assembly. First and second brake head assemblies are disposed to opposite lateral sides of the axis, with each brake head assembly being operably carried by the brake beam formation and includes a guide member extending in a direction away from the axis. The first and second brake head assemblies are generally centered laterally relative to the axis of the brake beam assembly. A distal end of the guide member on the first brake head assembly is disposed a different lateral distance from the axis of the brake beam assembly than is a distal end of the guide member on the second brake head assembly to minimize lateral shifting movements while maintaining adequate clearances for permitting reciprocal moments of the brake beam assembly during application of braking forces. A method of designing a brake beam assembly for a railcar is also disclosed.

A plate assembly for a multi-disk brake system is provided. The plate assembly includes at least one of a pressure plate or an end plate and a floating plate wear liner mounted against the at least one of the pressure plate or the end plate. The floating plate wear liner is configured to contact a contact surface of an adjacent rotatable friction disk in response to the multi-disk brake system being actuated.

A metal matrix composite article that includes at least first and second regions, first and second reinforcement materials, a metal matrix composite material occupying the second region of the body and comprising a metal matrix material and the second reinforcement component, a preform positioned in the first region of the body and infiltrated by at least the metal matrix material of the metal matrix composite material. The article further includes a transition region located proximate an outer surface of the preform that includes a distribution of the second reinforcement component comprising a density increasing according to a second gradient in a direction toward the outer surface of the preform.

The present disclosure provides a fibrous preform, comprising an annulus having at least one of an outer diameter portion or an inner diameter portion, the outer diameter portion extending radially inward from an outer diameter of the fibrous preform and the inner diameter portion extending radially outward from an inner diameter of the fibrous preform. In various embodiments, the fibrous preform further comprises a medial diameter portion disposed between the outer diameter and the inner diameter, wherein the medial diameter portion comprises a first needling profile, and the at least one of the outer diameter portion or the inner diameter portion comprises a second needling profile. In various embodiments, the first needling profile is less than the second needling profile.

An energy conversion process that exports by-product CO2 at elevated pressure where a fuel gas feed stream is mixed with a reactant stream and additional CO2 is added to at least part of, the fuel gas feed stream, the reactant stream or both through desorption by contacting with a CO2-rich solvent stream in a first stage contactor to produce a mixed feed gas stream and a CO2-lean solvent stream; passing said mixed feed gas stream to a chemical conversion step, where further CO2 is produced; chilling at least part of the products of said chemical conversion step and thereby produce a CO2-lean gas stream; and passing at least part of said CO2-lean gas stream said to a second stage contactor where further CO2 is removed, by absorption, to produce a product gas stream and a solvent stream rich in CO2 from which said CO2-rich solvent stream is subsequently derived.