A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer. The substrate intermediate layer and the device intermediate layer comprise a distribution in their compositions along a thickness coordinate.

A display device comprising TFT elements having satisfactory characteristics and being easy to assemble. In the display device, a pixel emitting red light comprises a red color filter. The red color filter forms a light shielding film for the TFT elements in a driver circuit portion or in a pixel portion.

Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A light-emitting element includes a first electrode, a first light-emitting layer formed over the first electrode, a second light-emitting layer formed on and in contact with the first light-emitting layer to be in contact therewith, and a second electrode formed over the second light-emitting layer. The first light-emitting layer includes a first light-emitting substance and a hole-transporting organic compound, and the second light-emitting layer includes a second light-emitting substance and an electron-transporting organic compound. Substances are selected such that a difference in LUMO levels between the first light-emitting substance, the second light-emitting substance, and the electron-transporting organic compound is 0.2 eV or less, a difference in HOMO levels between the hole-transporting organic compound, the first light-emitting substance, and the second light-emitting substance is 0.2 eV or less, and a difference in LUMO levels between the hole-transporting organic compound and the first light-emitting substance is greater than 0.3 eV.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

The present invention has an object of providing a light-emitting device including an OLED formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the OLED (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided. Owing to a laminate structure, if a crack occurs in one of the barrier films, the other barrier film(s) can prevent moisture or oxygen from penetrating into the organic light emitting layer. The stress relaxing film, which has a smaller stress than the barrier films, is interposed between the barrier films, making it possible to reduce stress of the entire sealing film. Therefore, a crack due to stress hardly occurs.

A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

A deployment guiding cloth is wound from an outside in the vehicle width direction, on an outer peripheral portion of a folded side airbag. This deployment guiding cloth extends toward a vehicle front side and is interposed between the side airbag that is partially deployed and a vehicle cabin side portion (a center pillar garnish and a door trim) before the side airbag is fully deployed.

A gliding apparatus includes a gliding board, a first front boot-retaining device for ascending a slope and a second front boot-retaining device for the descent. The first front retaining device comprises a first boot-fastening mechanism, defining a boot pivot axis during the ascent. The second front retaining device comprises a second boot-fastening mechanism, including a movable element incorporating an interface surface capable of contacting a front portion of the boot, the movable element being separate from the first fastening mechanism. The second front retaining device is configurable in a first “inactive” configuration for which the interface surface is away from the boot front portion, and a second “active” configuration for which the interface surface contacts the boot front portion. The first boot-fastening mechanism is capable of cooperating with the movable element of the second front retaining device so as to maintain the second front retaining device in its active configuration.

In an inflated and expanded state of a side airbag, a forwardly extending portion, provided at an upper portion of a rear side bag portion, extends from a side of a shoulder portion of a seated passenger toward a vehicle front side and is disposed above a front side bag portion. A dimension in a vehicle transverse direction of this forwardly extending portion is set to be smaller than that of the front side bag portion, and a vehicle transverse direction inner side surface at an upper end side of the front side bag portion is inclined or curved so as to rise-up while heading toward a vehicle transverse direction outer side. An upper arm portion is pushed-up due to sliding contact with this surface. Even when the seated passenger inertially toward an oblique front of a vehicle, the shoulder portion can be restrained by the forwardly extending portion.

There is provided a behavior control device for the prevention of a jackknife phenomenon of a combination vehicle including a tractor and a trailer pivotably coupled with the tractor, taking into account that the relative pivoting action of the trailer and tractor varies according to the magnitudes of a vehicle speed or a deceleration. The inventive behavior control device comprises a braking-driving force control portion which controls a braking-driving force of the tractor or the trailer to reduce a difference between a yaw rate of the tractor and a yaw rate of the trailer and a judgment portion which judges whether or not a braking-driving force control of the tractor or the trailer by the braking-driving force control portion is necessary; wherein the judgment portion changes based on a vehicle speed or a deceleration of the vehicle the judgment of whether or not the braking-driving force control is necessary.

A deployment guiding cloth is wound from an outside in the vehicle width direction, on an outer peripheral portion of a folded side airbag. This deployment guiding cloth extends toward a vehicle front side and is interposed between the side airbag that is partially deployed and a vehicle cabin side portion (a center pillar garnish and a door trim) before the side airbag is fully deployed.

A tool comprising a tool body having an opening defined by interior walls extending into the tool body and a casing disposed within the opening. The tool further includes a scintillator material disposed within the casing and a first compressive member disposed within the tool body at a first axial location. The first axial location extends for a fraction of a total axial length of the casing and exerts a first radially compressive force at the first axial location.

In one aspect, an apparatus for drilling a wellbore into an earth formation is disclosed, which apparatus, according to one embodiment, may include a drill string configured to be conveyed into a wellbore, wherein an annulus is formed between the drill string and a wellbore wall, a first flow device configured to circulate a first fluid from an annulus to a bore of the drill string, and a second flow device positioned downhole of the first flow device, the second flow device configured to circulate a second fluid from the bore of the drill string to the annulus.

This invention provides a structure for gunpowder charge for charging gunpowders of different rates in combined fracturing perforation devices. The structure for gunpowder charge is convenient to mount and transport. In one embodiment, said structure for gunpowder charge comprises an inner gunpowder box located between adjacent perforating charges in the charge frame of a perforation device, and an outer gunpowder box attached to the outer wall of the charge frame, wherein said outer gunpowder box comprises one or two box units (2 or 4) with at least one claw at the inner side of said box unit, said claw can be locked into a groove or installation hole of the charge frame, and wherein said inner gunpowder box and said outer gunpowder box are charged with gunpowders of different burning rates.

A method for estimating an inclination and azimuth at a bottom of a borehole includes forming a last survey point including a last inclination and a last azimuth; receiving at a computing device bending moment and at least one of a bending toolface measurement and a near bit inclination measurement from one or more sensors in the borehole; and forming the estimate by comparing possible dogleg severity (DLS) values with the bending moment value.

The invention relates to a device (10; 10a;10b; 10c; 50) for checking pharmaceutical products (1), in particular hard gelatin capsules, by means of at least one radiation source (30; 60) preferably embodied as an X-ray source, and a conveying device which conveys the products (1) in a clocked manner in a radiation area (31) of the radiation source (30; 60). The radiation emitted by the radiation source (30; 60) penetrating the products (1) preferably perpendicular to the longitudinal axes thereof (2), and the radiation is captured on the side of the products (1) opposite the radiation source (30) by means of at least one sensor element (35) which is coupled to an evaluation device (36). The invention is characterized in that the conveyor device is embodied as a conveyor wheel (15; 15a; 51) which can rotate in a stepped manner about an axis (12; 52), and the products (1) are arranged, while being conveyed in the radiation area (31), in receiving areas (28; 37; 56) of the conveyor wheel (15; 5a; 51).

It is an object to provide a photoelectric conversion device whose power consumption and a mounting area are reduced and yield is improved and further to provide a photoelectric conversion device whose number of manufacturing processes and manufacturing cost are reduced. A photoelectric conversion device includes a photoelectric conversion element for outputting photocurrent corresponding to illuminance, and a resistor changing resistance corresponding to illuminance. In the photoelectric conversion device, one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected in series; the other terminal of the photoelectric conversion element is connected to a high power supply potential; the other terminal of the resistor is connected to a low power supply potential; and a light intensity adjusting unit is provided on a light reception surface side of the photoelectric conversion element or the resistor to adjust illuminance.

According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face.

A coal nozzle assembly for a pulverized coal burner includes a diffuser. A flow conditioner also may be used with the assembly. The assembly conditions the coal/air flow before the coal/air flow is introduced to the furnace. The flow conditioner directs the coal into the diffuser where it is swirled to form a fuel rich outer ring disposed about an air rich inner portion before the fuel is delivered to the coal nozzle.

A combustion device in the form of an elevated fixed-grate that includes arcuately shaped solid refractory brick with ribs placed thereunder so as to allow horizontal air flow for fuel combustion. The brick are arranged atop one another in a stacked concentric configuration that forms a central fuel passageway and allows cascading of a fuel pile throughout the combustion stages. The device provides the benefit of proper de-ashing online while distributing the underfire air radially around the fuel pile. The elevated design of the bricks allows the air to be evenly distributed throughout the fuel pile and further allows the isolation of overfire and underfire air. Segregating overfire and underfire air in an evenly distributed manner allows the burner to combust a wide range of fuel moisture contents without modifying the mechanical components of the burner.

Improved silicon solar cells, silicon image sensors and like photosensitive devices are made to include strained silicon at or sufficiently near the junctions or other active regions of the devices to provide increased sensitivity to longer wavelength light. Strained silicon has a lower band gap than conventional silicon. One method of making a solar cell that contains tensile strained silicon etches a set of parallel trenches into a silicon wafer and induces tensile strain in the silicon fins between the trenches. The method may induce tensile strain in the silicon fins by filling the trenches with compressively strained silicon nitride or silicon oxide. A deposited layer of compressively strained silicon nitride adheres to the walls of the trenches and generates biaxial tensile strain in the plane of adjacent silicon fins.

Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.

Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

The present invention provides a solar-cell-integrated gas production device that can generate a first gas and a second gas by utilizing an electromotive force of a solar cell, and that can supply power to an external circuit by utilizing the same solar cell. The solar-cell-integrated gas production device according to the present invention comprises: a photoelectric conversion part having a light acceptance surface and its back surface; a first electrolysis electrode provided on the back surface of the photoelectric conversion part so as to be capable of being immersed into an electrolytic solution; a second electrolysis electrode provided on the back surface of the photoelectric conversion part so as to be capable of being immersed into the electrolytic solution; and a changeover part, wherein the first electrolysis electrode and the second electrolysis electrode are provided to be capable of electrolyzing the electrolytic solution to generate a first gas and a second gas by utilizing an electromotive force generated by irradiating the photoelectric conversion part with light, and the changeover part makes a changeover between a circuit that outputs the electromotive force, generated by irradiating the photoelectric conversion part outputs the electromotive force, generated by irradiating the photoelectric conversion part with light, to the first electrolysis electrode and the second electrolysis electrode.

Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.

An organic compound and a photoelectric conversion device containing the organic compound are disclosed. The organic compound and device realize high photoelectric conversion efficiency, low dark current and high-speed responsivity. It has been found that when this organic compound and an n-type semiconductor are used in combination, high-speed responsivity can be realized while maintaining high heat resistance, an aspect of which has not been seen when the connection part between a donor part and an acceptor part is a phenylene group.

In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.

[Problem] To provide a photovoltaic device capable of generating power whether day or night, without affecting the appearance of a structure or reducing lighting or other functions, and able to inhibit rises in room temperature by converting thermal radiation into electrical energy. [Means to Solve Problems] Provide a photoelectric conversion element 3 with a photovoltaic device 1 on structural members 2a-2d facing the outside of a house or other structure. Power generated by the photoelectric conversion element 3 is extracted via a power extraction unit 4. The power conversion element 3 includes a semiconductor layer 11, conductive layer 20, a metal nanostructure 30 having multiple periodic structures 33, a first electrode 41 and a second electrode 42. The first and second electrodes 41, 42 are separated in the direction of the surface of the photoelectric conversion element 1 with the terminals 71, 81 of the power extraction unit 4 respectively connected.

A separate connection device (40) intended to be inserted between a metal frame (3), of an electrical component (1), and a metal supporting structure (20) in order to connect, electrically and separately, the frame to the supporting structure. The connection device (40) comprises a metal blade manufactured from spring steel which comprises two self-connecting end areas (45, 46) arranged in separate planes and comprising a set of sharp teeth (47) arranged in order to be embedded within the metal material and formed on a folded section of the metal blade so that the sets of teeth (37, 47) extend in opposite directions and in planes intended to intersect the planes of the frame (3) and of the supporting structure (20) when the connection device is mounted.

A conductive paste may include a conductive component and an organic vehicle. The conductive component may include an amorphous metal. The amorphous metal may have a lower resistivity after a crystallization process than before the crystallization process, and at least one of a weight gain of about 4 mg/cm2 or less and a thickness increase of about 30 μm or less after being heated in a process furnace at a firing temperature.

According to example embodiments, a conductive paste includes a conductive component that contains a conductive powder and a titanium (Ti)-based metallic glass. The titanium-based metallic glass has a supercooled liquid region of about 5K or more, a resistivity after crystallization that is less than a resistivity before crystallization by about 50% or more, and a weight increase by about 0.5 mg/cm2 or less after being heated in a process furnace at a firing temperature. According to example embodiments, an electronic device and a solar cell may include at least one electrode formed using the conductive paste according to example embodiments.

A method for fabricating a photovoltaic device includes depositing a p-type layer at a first temperature and depositing an intrinsic layer while gradually increasing a deposition temperature to a final temperature. The intrinsic layer deposition is completed at the final temperature. An n-type layer is formed on the intrinsic layer.