Polishing pad and production method therefor, and production method for semiconductor device
A polishing pad, having a polishing layer comprising a thermoset polyurethane foam, wherein the polishing layer has an in-plane variation of 12 or less in microrubber A hardness, the variation being obtained by measuring the polishing layer from a polishing surface side of the layer, the thermoset polyurethane foam contains, as raw material components, an isocyanate component and active-hydrogen-containing compounds, and the active-hydrogen-containing compounds comprise a trifunctional polyol having at least one terminated hydroxyl group that is a secondary hydroxyl group, and having a hydroxyl group value of 150 to 1,000 mg KOH/g in an amount of 10 to 50 parts by weight for 100 parts by weight of the active-hydrogen-containing compounds.