Some embodiments include transistors having a channel region under a gate, having a source/drain region laterally spaced from the channel region by an active region, and having one or more dielectric features extending through the active region in a configuration which precludes any straight-line lateral conductive path from the channel region to the source/drain region. The dielectric features may be spaced-apart islands in some configurations. The dielectric features may be multi-branched interlocking structures in some configurations.

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

Provided is a novel coated phosphor capable of effectively suppressing the adverse effects of hydrogen sulfide gas generated by the reaction between a sulfur-containing phosphor and moisture in the air. Provided is a sulfur-containing phosphor having a configuration in which ZnO compound containing Zn and O is present on the surface of a sulfur-containing phosphor having a host material which includes sulfur.

A transistor device includes a compound semiconductor body having a first surface and a two-dimensional charge carrier gas disposed below the first surface in the compound semiconductor body. The transistor device further includes a source in contact with the two-dimensional charge carrier gas and a drain spaced apart from the source and in contact with the two-dimensional charge carrier gas. A first passivation layer is in contact with the first surface of the compound semiconductor body, and a second passivation layer is disposed on the first passivation layer. The second passivation layer has a different etch rate selectivity than the first passivation layer. A gate extends through the second passivation layer into the first passivation layer.

A control arrangement for a hydropneumatic suspension system and a hydropneumatic suspension system are provided. The control arrangement has a pressure supply connection, a return connection, a piston chamber connection adapted to be connected to the piston chamber of a suspension cylinder of the hydropneumatic suspension system, an annular chamber connection adapted to be connected to the annular chamber of the suspension cylinder, and at least one controllable valve arrangement comprising a plurality of switch positions via which the pressure supply connection and the return connection are connectable to the piston chamber connection and the annular chamber connection. The annular chamber connection is in flow connection with the return connection via a pressure-limiting line having a hydraulically controllable pressure-limiting element. The pressure-limiting element has a control input adapted to be acted upon via a control line by a control pressure which is limitable to a predefinable pressure limit.

A reconfigurable fixed position suspension and support structure attached to the trailer body using a locking device consisting of pins, bolts and/or other fastening devices. The support structure has a removable locking device that when attached to the support structure locks the support structure and suspension into a fixed position relative to the trailer body. When the trailer is not in operation, the locking device can be removed allowing the suspension group to be reconfigured, and each suspension to be repositioned relative to the trailer body. The removable locking device is then reattached to the suspension support structure locking the support structure and suspension into a new fixed position relative to the trailer body.

A ski system includes a ski, a heel binding provided on an upper surface of the ski, a toe binding mount provided on the upper surface of the ski forward of the heel binding, a toe binding releasably mounted to the toe binding mount, and a quick-release locking mechanism for locking the toe binding to the toe binding mount. The quick-release locking mechanism is configured for release by hand.

There is provided a behavior control device for the prevention of a jackknife phenomenon of a combination vehicle including a tractor and a trailer pivotably coupled with the tractor, taking into account that the relative pivoting action of the trailer and tractor varies according to the magnitudes of a vehicle speed or a deceleration. The inventive behavior control device comprises a braking-driving force control portion which controls a braking-driving force of the tractor or the trailer to reduce a difference between a yaw rate of the tractor and a yaw rate of the trailer and a judgment portion which judges whether or not a braking-driving force control of the tractor or the trailer by the braking-driving force control portion is necessary; wherein the judgment portion changes based on a vehicle speed or a deceleration of the vehicle the judgment of whether or not the braking-driving force control is necessary.

A drilling control system monitors and compares drilling and completion operation sensor values and autonomously acts in response to conditions such as a kick or surge. Sensors in various combinations may monitor return fluid flow rate, fluid inflow rate, wellhead bore pressure, temperature of returning fluid, torque, rate of penetration and string weight change. The control system has corresponding control logic to monitor, warn and act based on the sensor inputs. The actions may include the warning of support personnel, closing an annular blowout preventer, shearing drill pipe using a ram shear, pumping heavier fluid down choke and kill lines, disconnecting the riser or various other actions.

An attitude hold controller method includes receiving at a navigable apparatus a demand inclination and a demand azimuth with respect to a global coordinate system and determining at the navigable apparatus a demand attitude vector according to the received demand inclination and the demand azimuth. Determining at the navigable apparatus a current navigable apparatus attitude vector. Evaluating a control law using the current navigable apparatus vector and the navigable apparatus demand attitude to derive a control law tool face, converting the control law tool face to an equivalent tool face, and applying the equivalent tool face with the navigable apparatus to control the navigable apparatus attitude.

Diamond bonded constructions comprise a diamond body attached to a substrate, wherein the body includes a first diamond bonded volume, and a second diamond bonded volume attached thereto. The second volume may be provided in the form of a powder or a presintered mass prior to attachment, and the first volume may be provided in the form of presintered pieces when combined with the second volume. The first volume diamond volume content is greater than about 94 percent, and is the same or greater than that of the second volume. The first volume is sintered during a first HPHT process, and the second volume is sintered and/or attached to the first volume during a second HPHT process. The first HPHT pressure is greater than the second HPHT pressure. The substrate is not an infiltration substrate used to form the first diamond volume. The diamond body may be thermally stable.

Mobile drilling devices and systems, methods, and computer-readable media for controlling such devices are provided. One method includes receiving user input from a user of a mobile computing device. The method further includes transmitting data based on the user input from the mobile computing device to a control circuit of a mobile drilling device via a wireless network connection. The method further includes generating a plurality of control signals based on the data received from the mobile computing device. Each of the plurality of control signals is configured to control movement of a separate one of a plurality of movement devices of the mobile drilling device. The plurality of movement devices are configured to move the mobile drilling device between locations.

A control and monitoring system controls and monitors a high power laser system for performing high power laser operations. The control and monitoring system is configured to perform high power laser operation on, and in, remote and difficult to access locations.

Embodiments of the invention relate to polycrystalline diamond compacts (“PDCs”) comprising a polycrystalline diamond (“PCD”) table including at least a portion having aluminum carbide disposed interstitially between bonded-together diamond grains thereof, and methods of fabricating such PDCs. In an embodiment, a PDC includes a substrate, and a PCD table bonded to the substrate. The PCD table includes a plurality of bonded-together diamond grains defining a plurality of interstitial regions. The PCD table further includes aluminum carbide disposed in at least a portion of the plurality of interstitial regions.

Disclosed herein is a method of delineating a second wellbore from a first wellbore. The method includes, emitting acoustic waves from a tool in the first wellbore, receiving acoustic waves at the tool reflected from the second wellbore, and determining orientation and distance of at least a portion of the second wellbore relative to the tool.

Method and apparatus for controlling rock drilling with a percussion device belonging to a rock drill to deliver stress waves to rock through a tool by pushing the tool against the rock by means of a feed motor and rotating simultaneously the tool by means of a rotation motor, whereby the maximum feed force is determined, pressure medium is supplied to the feed motor and to the rotation motor and the feed force is controlled according to the drilling conditions. The feed force is controlled on the basis of the feed speed and the rotation torque. The apparatus has a load control valve which controls the feed.

Nozzles for drilling tools, such as rotary-type drag bits and roller cone bits, a drilling tool and drilling assembly comprising nozzles, and methods of conveying drilling fluid through a nozzle for use in drilling subterranean formations are provided. A nozzle may include a substantially cylindrical nozzle body having an axis and an inlet port with a primary passage extending therethrough, and at least one secondary passage that diverges from the primary passage at an exit port.

A drill bit having a bit body, at least one blade extending radially from the bit body, a plurality of blade cutting elements disposed on each blade, at least one journal extending downwardly and radially outward from a longitudinal axis of the drill bit, a roller cone or roller disc mounted rotatably to each journal, and a plurality of cutting elements disposed on each roller cone or roller disc, and methods for making the drill bit are disclosed.

A surface contamination monitoring system/method configured to correct the detected the radioactive net count rate (NCR) value of a whole-body surface contamination monitoring device based on monitored subject height and thickness is disclosed. The system includes a height detection means for determining the height of a monitored subject and a thickness detection means for determining the thickness of at least a portion of the monitored subject. The net count rate (NCR) is corrected based on the determined height and thickness of the monitored subject as applied to site calibration factor data and self-shielding factor data to produce a corrected net count rate (CNR). If the corrected net count rate (CNR) registers above a preset alarm threshold, the monitored subject is considered contaminated and an appropriate alarm is registered.

Controlling electromagnetic (‘EM’) radiation in a data center having a number EM sections, including: receiving, by an EM controller, a specification of preferred EM radiation characteristics for the data center; and setting, by the EM controller, a state of each EM section in accordance with the specification, where the state of each EM section may be one of: an absorption state in which the EM section absorbs EM radiation or a reflection state in which the EM section reflects EM radiation.

There is provided a cassette having: a flexible accommodating body that accommodates an accumulative fluorescent sheet in a light shielded state; an entrance/exit portion that is provided at one end portion of the flexible accommodating body, and through which the accumulative fluorescent sheet can be inserted and removed into and from the flexible accommodating body due to mounting to a radiographic image reading device; and opening/closing means for opening the flexible accommodating body such that a push-out member, that pushes the accumulative fluorescent sheet out toward the entrance/exit portion, can be inserted, or closing the flexible accommodating body in a light shielded state.

Apparatus for performing electron radiation therapy on a breast cancer patient preferably includes an intraoperative electron radiation therapy machine, an intraoperative electron radiation therapy collimator tube connected to the intraoperative electron radiation therapy machine, and a plurality of filters made of a material having substantially the same density as human breast tissue for placement between the machine and the patient to change the energy of a monoenergetic beam after the beam has left the machine, allowing a filter to be chosen to reduce the energy traveling through the tube to a desired amount of energy to treat the patient. A method of controlling the amount of energy to reach a breast cancer patient undergoing electron radiation therapy includes selecting a filter made of a material having substantially the same density as human tissue and placing the filter between an intraoperative electron radiation therapy machine and a breast cancer patient to change the energy of a monoenergetic beam after it has left the machine, the filter being chosen to reduce the energy traveling from the machine to a desired amount of energy to treat the patient.

The invention relates to a thermal conduction element (20) for a package for transporting and/or storing radioactive materials, comprising: an internal part (30) intended to be in contact with a lateral body (14) of the package;an external part (34) intended to form a portion of an external envelope (24) of said package, holding radiological protection means (22);an intermediate part (32) arranged between the internal and external parts,the internal, external and intermediate parts being produced from copper and one of the alloys thereof. According to the invention, the external part (34) is equipped, at each of its two opposite ends, with an area (36) for connection by welding to another thermal conduction element (20), each connection area (36) being produced from steel.

A coupling and various methods of use of the coupling. In one embodiment a coupling is provided for use with an appliance operated by a power supply, which coupling allows mounting/dismounting of the appliance without electrical isolation from the supply, said coupling comprising: a) a mounting member having a first encapsulated transformer element and suitable controls connectable to the power supply, said member being suitable for fixing to a structure; and b) a holder member engageable with said mounting member and suitable for holding or for connecting thereto an appliance, said holder member including a second encapsulated transformer element able to conduct power to an appliance.

A detection apparatus configured to detect soft X-ray radiation, includes a conversion unit and a circuit unit disposed on a semiconductor substrate. The conversion unit has a plurality of conversion elements that convert the soft X-ray radiation incident on the semiconductor substrate into electric charge. The circuit unit has an amplifier transistor that amplifies and outputs a signal supplied from the conversion unit. A shielding unit is disposed above the circuit unit. The shielding unit blocks the soft X-ray radiation incident on the circuit unit. Preferably, the soft X-ray shielding coefficient of a material that forms the shielding unit is higher than the soft X-ray shielding coefficient of each of aluminum and copper. Alternatively, a material that forms the shielding unit has an atomic number higher than or equal to 70.

Provided is an A/D converter including an input terminal, a reference signal line for supplying a reference signal which changes temporally, a comparator, a correction capacitor connected to an inverting input terminal of the comparator; and an output circuit which outputs digital data corresponding to an analog signal input to the input terminal. In a first state in which a total voltage of a first analog signal and an offset voltage of the comparator is held in the correction capacitor, a second analog signal input to the input terminal is supplied to a non-inverting input terminal of the comparator, and the second analog signal or the total voltage is changed using the reference signal, thereby outputting, from the output circuit, digital data.

It is an object to provide a photoelectric conversion device whose power consumption and a mounting area are reduced and yield is improved and further to provide a photoelectric conversion device whose number of manufacturing processes and manufacturing cost are reduced. A photoelectric conversion device includes a photoelectric conversion element for outputting photocurrent corresponding to illuminance, and a resistor changing resistance corresponding to illuminance. In the photoelectric conversion device, one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected in series; the other terminal of the photoelectric conversion element is connected to a high power supply potential; the other terminal of the resistor is connected to a low power supply potential; and a light intensity adjusting unit is provided on a light reception surface side of the photoelectric conversion element or the resistor to adjust illuminance.

The invention relates to an incineration plant with a furnace, a device for feeding back incineration residues into the furnace, a device for measuring at least one parameter of the incineration, and devices for controlling the incineration. Moreover, the invention relates to a method for controlling an incineration plant.

A pipe connecting structure of a water heater. Individual parts in the water heater are integrally coupled with a pipe body, which is injection-molded, provides paths of tap water and hot water, reduces the number of pipes connecting the individual parts, and simplifies the connection structure of the pipes. The pipe connecting structure of the water heater includes a tap water inlet pipe connected from a tap water inlet to a heat exchanger; a hot water supply pipe connected from the heat exchanger to a hot water outlet; a flow sensor for measuring the flow rate of the tap water introduced via the tap water inlet; and a flow control valve for controlling the flow rate of the hot water discharged via the hot water outlet. The pipe body connects and is integral with the tap water inlet, the tap water inlet pipe, the hot water supply pipe, and the hot water outlet.

Disclosed herein is an apparatus and method of constructing a stationary wear-resistant stationary nozzle 200 and/or nozzle liner 230 for solid fueled furnaces. A transition section 210 is constructed from several flat pieces 211-218 several that may have identical starting shapes. This reduces manufacturing complexity and costs. All pieces 211-218 have a high-wear weld overlay on their inner surface 316, 416. Corner pieces 215-218 are folded into a corner shape at an outlet edge 412 and rolled into a curved shape at an inlet edge 411. Horizontal 211, 212 and vertical pieces 213, 214 are only rolled at an inlet edge 311. The pieces have seam tab 240 along longitudinal edges that are welded together to construct a transition section 210. The transition section 210 may be used as a liner to reduce wear in an existing stationary nozzle or may be constructed to be connected to an inlet piece 220 to form a strong, wear-resistant coal nozzle 200.

The combustion controller controls the fuel and air that are supplied to the combustion furnace for burning substances, and addresses the aforementioned object by including: fuel supply unit for supplying fuel and air into the combustion furnace; air supply unit for supplying air into the combustion furnace, the air supply unit being disposed downstream of the fuel supply unit in the direction of flow of combustion air; concentration measuring unit for measuring the concentration of hydrogen sulfide of the combustion air by passing a measurement beam of light through the combustion air at a measurement position downstream of the fuel supply unit in the direction of flow of the combustion air; and control unit for controlling the amount of air supplied from the fuel supply unit based on a measurement result provided by the concentration measuring unit.

A burner system for consumption of waste fuel comprises a screw conveyor having a longitudinal hollow interior for air distribution and radially disposed air intake orifices connecting the hollow interior to a plurality of combustion chambers, which includes a first combustion chamber disposed centrally around the screw conveyor and at least one orifice; a second combustion chamber disposed concentrically around the first combustion chamber, receiving burning waste fuel from the first combustion chamber, and in fluid communication with the air intake orifice to provide air from an air blower through the orifice; and a third combustion chamber disposed concentrically around the second combustion chamber, receiving waste fuel from the second combustion chamber, and in fluid communication with the air intake orifice to provide air from the air blower.

The burner preferably exclusively burns substantially explosible solid fuels and preferably has instant ON-OFF thermostat control, wastes no energy preheating the enclosure or external air supply, achieves stable combustion the moment the powder-air mix is ignited in our burner, is used in the upward vertical mode except for oil burner retrofits, burns a solid fuel in a single-phase regime as if it were a vaporized liquid or gas, is designed to complete combustion within the burner housing itself rather than in a large, high temperature furnace enclosure which it feeds, has an ultra-short residence time requirement, is a recycle consuming burner with self-contained management of initially unburned particles, is much smaller, simpler and lower cost, has a wider dynamic range/turndown ratio, is more efficient in combustion completeness and thermal efficiency, and operates with air-fuel mix approximately at the flame speed.

Improved silicon solar cells, silicon image sensors and like photosensitive devices are made to include strained silicon at or sufficiently near the junctions or other active regions of the devices to provide increased sensitivity to longer wavelength light. Strained silicon has a lower band gap than conventional silicon. One method of making a solar cell that contains tensile strained silicon etches a set of parallel trenches into a silicon wafer and induces tensile strain in the silicon fins between the trenches. The method may induce tensile strain in the silicon fins by filling the trenches with compressively strained silicon nitride or silicon oxide. A deposited layer of compressively strained silicon nitride adheres to the walls of the trenches and generates biaxial tensile strain in the plane of adjacent silicon fins.

Methods and apparatus for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells are provided. A photovoltaic (PV) device generally includes a window layer; an absorber layer disposed below the window layer such that electrons are generated when photons travel through the window layer and are absorbed by the absorber layer; and a plurality of contacts for external connection coupled to the absorber layer, such that all of the contacts for external connection are disposed below the absorber layer and do not block any of the photons from reaching the absorber layer through the window layer. Locating all the contacts on the back side of the PV device avoids solar shadows caused by front side contacts, typically found in conventional solar cells. Therefore, PV devices described herein with back side contacts may allow for increased efficiency when compared to conventional solar cells.

A method of connecting two solar cells is disclosed. In one embodiment, the method comprises gripping an interconnect with a head of positioning device, heating the interconnect with the head of the positioning device to between two predetermined temperatures, where one is higher than the other, positioning the interconnect so as to overlay two adjacent solar cells, coupling the interconnect to each of the two adjacent solar cells, and releasing the interconnect from the head.

A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

This disclosure relates to electroconductive paste formulations useful in solar panel technology. In one aspect, the disclosure relates to an inorganic reaction system for use in electroconductive paste compositions, wherein the inorganic reaction system comprises a lead containing matrix composition and a tellurium containing matrix composition. In another aspect, the disclosure relates to an electroconductive paste composition comprising a conductive metal component, an inorganic reaction system and an organic vehicle. Another aspect of the disclosure relates to a solar cell produced by applying an electroconductive paste composition of the invention to a silicon wafer. Yet another aspect relates to a solar cell module assembled using solar cells produced by applying an electroconductive paste composition to a silicon wafer, wherein the electroconductive paste composition comprises an conductive metal component, an inorganic reaction system and an organic vehicle.

A photoelectric conversion element comprising a substrate, a first electrode, a photoelectric conversion layer comprising a semiconductor and a sensitizing dye, a hole transport layer and a second electrode, wherein the hole transport layer comprises a polymer having a repeat unit represented by Formula (1) or (2),

The present teachings relate to new semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

Disclosed are molecular and polymeric compounds having desirable properties as semiconducting materials. Such compounds can exhibit desirable electronic properties and possess processing advantages including solution-processability and/or good stability.

Novel photoactive polymers, as well as related photovoltaic cells, articles, systems, and methods, are disclosed.