A container adapted for dispensing a product is provided. The container includes an outer casing body for receiving a dispensing tray. The dispensing tray has an internal storage compartment for storage of a plurality of units of a product to be dispensed, and includes a cover plate defining at least one dispensing aperture through which a stored unit of product is accessible when the outer casing body is in a dispensing position. The container includes a locking mechanism that releasably locks the outer casing body in the closed and locked position.

Wood particles having fibers aligned in a grain, wherein: the wood particles are characterized by a length dimension (L) aligned substantially parallel to the grain, a width dimension (W) normal to L and aligned cross grain, and a height dimension (H) normal to W and L; the L×H dimensions define two side surfaces characterized by substantially intact longitudinally arrayed fibers; the W×H dimensions define two cross-grain end surfaces characterized individually as aligned either normal to the grain or oblique to the grain; the L×W dimensions define two substantially parallel top and bottom surfaces; and, a majority of the W×H surfaces in the mixture of wood particles have end checking.

This application is directed to groove milling devices for milling a groove in a component. In one example, a groove milling device includes a milling disk which is rotatable about a rotational axis, wherein the groove milling device comprises a displacement device for moving the milling disk along the rotational axis during the milling process. In an example, the groove milling device may include a control device which actuates the displacement device automatically when a predetermined depth of the milled groove is reached during the milling process. In an example, the groove milling device may include a switch for activating the displacement device by an operator during the milling process. In an example, the energy required for actuating the displacement device may be generated by a generator coupled to a main drive spindle of the groove milling device.

An elevating and clewing continuous log turner includes a mainframe having a movable frame adapted for vertical or horizontal translation relative to the mainframe. A rotating group is mounted in the movable frame. The rotating group has a passageway therethrough. Roller arms are pivotally mounted around a perimeter of the rotating group. The roller arms concentrically clamp the log relative to the rotating group to thereby rotate the log about its longitudinal axis simultaneously with selective rotation of the rotating group. At least one actuator horizontally and vertically translates the movable frame relative to the mainframe.

Systems and methods for adjusting a moisture concentration of veneer are provided. In at least one specific embodiment, the method for adjusting a moisture concentration of a veneer can include estimating a moisture concentration of a veneer surface at one or more locations thereon. The method can also include comparing the one or more estimated locations to a minimum moisture concentration level. The method can also include moisturizing at least a portion of the one or more estimated locations that are below the minimum moisture concentration level to increase the moisture concentration thereof.

A sheet conveyance unit for transporting a sheet unreeled from a roll of paper includes a roll holder including a pair of supporters to support both axial end portions of the roll, movable in an axial direction of the roll, a pair of first conveyance rollers, a pair of second conveyance rollers, a tensioner to tension the sheet, disposed between the first conveyance rollers and the second conveyance rollers, and a tension adjustment unit. The tensioner includes a contact plate to press against the sheet, extending over an entire width of the sheet and pivotably supported on a casing of the sheet conveyance unit. The tension adjustment unit changes the tension of the sheet by adjusting a force to press the contact plate against the sheet and includes a first adjuster to change the tension of the sheet in conjunction with the interval between the supporters.

A coiled roll container including a base having opposed one and other sides and an outlet slot through which an edge of the coil roll extends. A pair of elastic cords each having opposed one and other ends is provided with the one end fixed at one side of the base and the other end releasably attached to the other side of the base. The elastic cords are for looping over the coiled roll to secure the coiled roll in place. The container also includes a cord locking mechanism at the other side of the base for receiving and securing the elastic cords about the coil roll.

An electrical system having an underlying structure resembling the double helix most commonly associated with DNA may be used to produce useful electromagnetic fields for various application.

A system for controlling air flow within an agricultural product metering system is provided. One system for distributing an agricultural product includes an air conveyance system having a blower configured to provide an air stream for moving metered product toward a distribution device. The air conveyance system is mounted on an air cart. The system also includes control circuitry mounted on an agricultural vehicle, and configured to adjust a speed of the blower based at least partially on a product flow rate from the air cart.

A method and apparatus for automating some of the tasks that heretofore required operator action at headland turns or similar events are provided. The present invention automates operation of lift assist wheels and/or gull wings, such as those found on a stack-fold implement, based on the position of the tractor hitch to which the implement is coupled. An operator may control the position of the implement, such as at a headland turn, by raising and lowering the tractor hitch using a remote control. The invention enables the planter to compare the tractor hitch position relative to an implement position and control operation of the implement accordingly without additional user inputs.

A planter row unit is disclosed having an active downforce control system for the closing wheels. This separate control of the downforce pressure for the closing wheels is provided from the row unit downforce control. A single operator input is used to set a desired downforce for all row units. The control system then operates to produce the desired downforce. Alternatively, the control system may display a downforce load to the operator who then manually makes adjustments as desired.

A dynamic supplemental downforce control system for a planter row unit. The system includes closed-loop feedback circuit that cooperates with a downforce actuator to dynamically control fluid flow to the downforce actuator to maintain balance between the actual gauge wheel downforce and a desired gauge wheel downforce during planting operations.

A seed metering assembly for a farm implement has a meter roller that can be accessed and removed in a relatively quick manner. The seed metering assembly includes a fluted meter roller that is segmented into a number of discrete fluted sections. Each fluted section has an associated flow control member that is selectively operable to impede the flow of granular material from a seed hopper to its corresponding section of the fluted meter roller.

A seed meter control system is provided that allows for controlling seed meters of a row crop planter in a manner that reduces frequency of skip occurrences in which no seeds are delivered during a delivery event and double occurrences in which more than one seed is delivered during a delivery event. A target seeding session performance may be compared with an observed seeding session performance value and a delivery anomaly value to determine whether to make a corrective action by controlling at least one of the seed meters.

An agricultural implement includes a storage tank, a pump positioned below a bottom portion of the storage tank, and a control system disposed above the bottom portion of the storage tank. The storage tank is configured to hold a flowable agricultural product. The pump is configured to direct the flowable agricultural product out of the storage tank. The one or more controls are configured to control application of the flowable agricultural product.

Disclosed are apparatus and method for decontaminating and sterilizing chemical and biological agents, which can efficiently decontaminate and sterilize high precision electronic devices, communication devices, computers or inside of vehicles and air planes contaminated with chemical and biological agent by using mixture of non-thermal atmospheric pressure air plasma and oxidizing peroxide vapor. The apparatus according to the present invention comprises a decontamination and sterilization chamber 10; a first fluid supplying line L1 and a second fluid supplying line L2, which are installed in the form of closed circuit between the inlet 11 and outlet 12 of the decontamination and sterilization chamber 10; a peroxide vapor supplier which is installed on the first fluid supplying line; and a non-thermal atmospheric pressure air plasma reactor 70 which is installed on the second fluid supplying line L2.

An electro-catalytic honeycomb for controlling exhaust emissions, which adopts to purify a lean-burn exhaust, comprises a honeycomb structural body, a solid-oxide layer and a cathode layer. The honeycomb structural body includes an anode, a plurality of gas channels, and a shell. The anode is formed as a backbone, the gas channels are formed inside the backbone for passing the exhaust, and the shell covers an outer surface of the anode. The solid-oxide layer is adhered to an inner surface of the anode and connects the shell so as to encapsulate the anode. The cathode layer is adhered to a tube wall of the solid-oxide layer and has an oxidizing environment. The anode has a reducing environment. The reducing and the oxidizing environment facilitate an electromotive force to occur between the anode and the cathode layer to promote a decomposition of nitrogen oxides of the exhaust into nitrogen and oxygen.

A contacting-type conductivity sensor includes an electrically-insulative plastic body and a plurality of electrodes. The plurality of conductive electrodes is disposed in the plastic body. Each electrode is constructed of plastic and fused with the electrically-insulative plastic body. A method of manufacturing the conductivity sensor is provided along with a single-use bioreactor employing the sensor.

A method to inexpensively and efficiently produce conductive materials on the surface of which a nano-level fine structure is formed includes surface modification including immersing a stable anode electrode and a workpiece as a cathode electrode, the workpiece including a conductive material with a work surface, in an electrolytic solution, then applying a voltage not less than a first voltage and less than a second voltage between the stable anode electrode and the workpiece as the cathode electrode immersed in the electrolytic solution, thereby modifying the work surface, the first voltage being a voltage corresponding to a current value that is ½ of the sum of a first maximum current value appearing first in a positive voltage region and a first minimum current value appearing first in the positive voltage region with respect to voltage-current characteristics of a surface modification treatment system, the second voltage exhibiting a complete-state plasma.

Interconnect structures and methods of fabricating the same are provided. The interconnect structures provide highly reliable copper interconnect structures for improving current carrying capabilities (e.g., current spreading). The structure includes an under bump metallurgy formed in a trench. The under bump metallurgy includes at least: an adhesion layer; a plated barrier layer; and a plated conductive metal layer provided between the adhesion layer and the plated barrier layer. The structure further includes a solder bump formed on the under bump metallurgy.

A method for producing a transparent and conductive metal oxide layer on a substrate, includes atomizing at least one component of the metal oxide layer by highly ionized, high power pulsed magnetron sputtering to condense on the substrate. The pulses of the magnetron have a peak power density of more than 1.5 kW/cm2, the pulses of the magnetron have a duration of ≦200 μs, and the average increase in current density during ignition of the plasma within an interval, which is ≦0.025 ms, is at least 106 A/(ms cm2).

The present invention provides a method for fabricating a working electrode. The method comprises the following steps: providing a photoelectrode, which comprises a conductive substrate with a semiconductor material; providing a dye solution, which comprises a dye dissolved in a solvent; and applying a voltage for conducting an electrophoresis to adsorb said dye onto a surface of said semiconductor material. The method of present invention makes the dye adsorbed fast to a surface of a semiconductor material by electrophoresis, and therefore, significantly reduces the time for fabricating a dye-sensitized solar cell.

A ripping mechanism for a vehicle has a support frame. A ripping member has an engagement head that is configured for plowing a groove in the ground. The ripping member is preferably positionable in a selected working position and working orientation by adjustment of the support frame. The ripping member is preferably movable relative to the support frame to cause reciprocating movement of the engagement head at least partially longitudinally. A tilt adjustment cylinder is preferably operable to orient the ripping member in the selected orientation. A vibrator mechanism is preferably operatively connected to the ripping member and activatable to cause reciprocating movement of the engagement head at least partially longitudinally.

A supplemental control system for a materials handling vehicle comprises a wearable control device, and a corresponding receiver on the materials handling vehicle. The wearable control device is donned by an operator interacting with the materials handling vehicle, and comprises a wireless transmitter to be worn on the wrist of the operator and a travel control communicably coupled to the wireless transmitter. Actuation of the travel control causes the wireless transmitter to transmit a first type signal designating a request to the vehicle. The receiver is supported by the vehicle for receiving transmissions from the wireless transmitter.

An articulated cutting head and conveyor mount for sod harvesting machines. The invention provides a linkage design that can provide many benefits including: allowing the operator to see the cutting operation, enabling the high lifting of the cutting head for service and maneuvering, managing the vertical bending load of the ground reference roller, providing high transverse stiffness, maintaining the position of the conveyor relative to the cutting head. The linkage design can include fewer parts than previous designs while still being robust and durable. As such, cutting heads employing the linkage design of the present invention can produce higher quality slabs with less service and maintenance than when using current designs.

The disclosure describes, in one aspect, a system and method for controlling a rotation angle of a blade of a motor grader having a front frame operatively coupled to a rear frame at a point defining an articulation angle between the front and rear frames. The control system includes at least one sensor operatively associated with the blade, at least one sensor operatively associated with a wheel, at least one sensor operatively associated with at least one of the front frame or the rear frame, and a controller operatively coupled to the at least one sensors. The controller is adapted to determine a current position of the blade, determine a wheel steering angle, determine an articulation angle, and control the rotation angle of the blade based in part on the wheel steering angle and the articulation angle.

A trailer includes a chassis having a hitch, an axle having a pair of tractive elements rotatably coupled to the chassis, an actuator coupled to the chassis and positioned to steer the pair of tractive elements, and a processing circuit. The processing circuit has an input for receiving a transmission gear of a tractor vehicle and a variable output for engaging the actuator. The processing circuit is configured to control the steering of the pair of tractive elements according to a control strategy that varies based on the transmission gear of the tractor vehicle.

A swing control apparatus and a swing control method for a construction machine are provided. The swing control apparatus includes a start position estimation unit, a stop target position calculation unit, and a swing motor position control unit. Even if an operator releases a lever or commands a stop at different times, an upper swing structure of the construction machine (for example, excavator) can be stopped within a predetermined range, and thus the inconvenience caused by an additional driving operation, which is required as the stop position differs according to the time point where the stop command starts, can be solved.

A brake control system and method for motor vehicles is provided with an electronic control unit, by which, when the motor vehicle is stationary, a parking brake function can be activated manually or automatically. Its deactivation occurs upon reaching a predefined release condition. In the presence of a release condition the brake pressure, which was built up for the parking brake function, is released in a time offset manner at least in relation to the axles of the vehicle by way of the control unit.

A control system for a machine is disclosed. The system includes a ripper sensor associated with a ripper of the machine configured to generate a signal indicative of a position of the ripper. The system includes a steering command sensor associated with a steering control module of the machine. The steering command sensor is configured to generate a signal indicative of a steering command of the machine. The system further includes a controller configured to receive the signals indicative of the position of the ripper and the steering command of the machine. The controller is configured to execute an action based on the engaged state of the ripper and the steering command of the machine.

Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied.

A semiconductor light-emitting device includes a lamination of semiconductor layers including a first layer of a first conductivity type, an active layer, and a second layer of a second conductivity type; a transparent conductive film formed on a principal surface of the lamination and having an opening; a pad electrode formed on part the opening; and a wiring electrode connected with the pad electrode, formed on another part of the opening while partially overlapping the transparent conductive film; wherein contact resistance between the transparent conductive film and the lamination is larger than contact resistance between the wiring electrode and the lamination. Field concentration at the wiring electrode upon application of high voltage is mitigated by the overlapping transparent conductive film.

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface containing an inorganic filler in an amount within a range of 70% by weight to 95% by weight based on the whole of the film for flip chip type semiconductor back surface.

An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.

The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.

According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.

A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer. The substrate intermediate layer and the device intermediate layer comprise a distribution in their compositions along a thickness coordinate.

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.