A semiconductor device includes an internal circuit, a power supply control circuit which controls supply of a power supply to the internal circuit upon receipt of a first control signal, and a control signal generation circuit which outputs the first control signal upon receipt of a second control signal. The control signal generation circuit does not deactivate the first control signal when an inactive period of the second control signal is equal to or less than a first period and deactivates the first control signal when the inactive period of the second control signal is more than the first period.

An embodiment of this invention uses a massive parallel interconnect fabric (MPIF) at the flipped interface of a core die substrate (having the core logic blocks) and a context die (used for in circuit programming/context/customization of the core die substrate), to produce ASIC-like density and FPGA-like flexibility/programmability, while reducing the time and cost for development and going from prototyping to production, reducing cost per die, reducing or eliminating NRE, and increasing performance. Other embodiments of this invention enable debugging complex SoC through large contact points provided through the MPIF, provide for multi-platform functionality, and enable incorporating FGPA core in ASIC platform through the MPIF. Various examples are also given for different implementations.

A method and apparatus that controls the clock of a digital circuit, and therefore power consumption, without substantially comprising performance is provided. The apparatus may include monitoring the utilization of a First in First Out (FIFO) buffer. For example in a systems and methods according to the invention, clock speed may be reduced when the FIFO is relatively empty and increased when the FIFO is relatively full. The clock speed may be controlled by a phase locked loop, a clock divider, a clock masking device or a combination of more than one of these methods. Power reduction may also be obtained by controlling the clocking of different stages of a pipelined device. One or more aspects of the inventions may be implemented in combination with other aspects of the invention to further reduce power use.

Embodiments described herein provide approaches for improving a standard cell connection for circuit routing. Specifically, provided is an IC device having a plurality of cells, a first metal layer (M1) pin coupled to a contact bar extending from a first cell of the plurality of cells, and a second metal layer (M2) wire coupled to the contact bar, wherein the contact bar extends across at least one power rail. By extending the contact bar into an open area between the plurality of cells to couple the M1 pin and the M2 wire, routing efficiency and chip scaling are improved.

The present invention relates to a method for downloading a binary configuration file in a programmable circuit implemented in a device. The device comprises at least one central processing unit, a plurality of connectors, and a programmable circuit enabling all or a part of the signals received by said connectors to be processed and transmitted to at least one other circuit of the device. The device analyzes the signals present on the connectors in order to define what other devices are connected and whether the connections are operational. Then, a configuration file is selected from among a set of configuration files according to the operational connections and is downloaded from a memory of the device into the programmable circuit. The invention also relates to a device having a component programmed according to the method previously described.

Embedded logic is implemented in a partially reconfigurable programmable logic device (PLD), thus allowing debugging of implemented instantiations of logic after partial reconfiguration. Several instantiations of logic are received at the PLD. One instantiation of logic is implemented in a reconfigurable region of logic within the PLD. The instantiation of logic includes a port that provides a constant interface between the reconfigurable region of logic and a fixed region of logic within the PLD. The port may receive signals from probe points implemented within the reconfigurable region of logic. The port may provide the signals to a signal interface implemented within a fixed region of logic. Furthermore, an embedded logic analyzer may be implemented in either the reconfigurable region of logic or the fixed region of logic. The embedded logic analyzer receives signals from the probe points and provides signal visibility to an external computing system.

A semiconductor integrated circuit including: a circuit block having an internal voltage line; an annular rail line forming a closed annular line around the circuit block and supplied with one of a power supply voltage and a reference voltage; and a plurality of switch blocks arranged around the circuit block along the annular rail line, the plurality of switch blocks each including a voltage line segment forming a part of the annular rail line and a switch for controlling connection and disconnection between the voltage line segment and the internal voltage line.

Embodiments of the invention are generally directed to a single-ended configurable multi-mode driver. An embodiment of an apparatus includes an input to receive an input signal, an output to transmit a driven signal generated from the input signal on a communication channel, a mechanism for independently configuring a termination resistance of the driver apparatus, and a mechanism for independently configuring a voltage swing of the driven signal without modifying a supply voltage for the apparatus.

There are provided an accumulator-type fractional N-PLL synthesizer for suppressing the fractional spurious caused by periodically switching a frequency division number of a fractional frequency divider, and a control method thereof. In an accumulator-type fractional N-PLL synthesizer (100), a pulse signal proportional to a fractional phase error occurring between a reference signal and an output signal of a fractional divider (112) for feeding back an output of a VCO (115) of an output stage to a preceding stage is generated using an error signal from an accumulator (120). Through the use of the pulse signal, pulse widths of a UP signal and a DN signal output from a phase detector (140) are controlled so as to reduce a fractional phase error occurring between the UP signal and the DN signal. Thus, the fractional spurious caused by periodically switching the frequency division number of the fractional divider (112) is suppressed.

A digitally controlled oscillator has a high-order ΔΣ modulator configured to be of at least an order higher than a first order and configured to input a digital control signal and output a pseudorandom digital output signal, a first-order ΔΣ modulator configured to input the pseudorandom digital output signal and generate a control pulse signal including a pulse width corresponding to the pseudorandom digital output signal, a low pass filter configured to pass a low frequency component of the control pulse signal, and an oscillator configured to generate a high-frequency output signal whose frequency is controlled based on the control pulse signal outputted by the low pass filter so as to be a frequency corresponding to the digital control signal.

A digitally-controlled oscillator includes a base frequency generator having an odd number of base inverters connected end-to-end to generate an output signal that oscillates at a predetermined frequency and a frequency-adjusting unit connected to the base frequency generator. The frequency-adjusting unit includes a first string of switchable inverters connected in series with each other, the switchable inverters having sizes that decrease from an input end of the first string to the output end of the first string.

Embodiments provide a multi-phase voltage controlled oscillator (VCO) that produces a plurality of output signals having a common frequency and different phases. In one embodiment, the VCO may include a passive conductive structure having a first ring and a plurality of taps spaced around the first ring. The VCO may further include a capacitive load coupled to the passive conductive structure, one or more feedback structures coupled between a pair of opposing taps of the plurality of taps, and one or more current injection devices coupled between a pair of adjacent taps of the plurality of taps.

The present invention discloses an Oven Controlled Crystal Oscillator and a manufacturing method thereof. The Oven Controlled Crystal Oscillator comprises a thermostatic bath, a heating device, a PCB and a signal generating element, where the signal generating element is used for generating a signal of a certain frequency, the heating device, the PCB and the signal generating element are mounted in the thermostatic bath, the signal generating element is mounted in a groove formed on one side of the PCB, while the heating device is mounted against the other side of the PCB that is opposite to the groove. The signal generating element may be a passive crystal resonator or an active crystal oscillator. The Oven Controlled Crystal Oscillator according to the invention is advantageous for a small volume and a high temperature control precision.

An integrated structure of compound semiconductor devices is disclosed. The integrated structure comprises from bottom to top a substrate, a first epitaxial layer, an etching-stop layer, a second epitaxial layer, a sub-collector layer, a collector layer, a base layer, and an emitter layer, in which the first epitaxial layer is a p-type doped layer, the second epitaxial layer is an n-type graded doping layer with a gradually increased or decreased doping concentration, and the sub-collector layer is an n-type doped layer. The integrated structure can be used to form an HBT, a varactor, or an MESFET.

A method, an apparatus, and a computer program product are provided. The apparatus tunes a frequency provided by a VCO. The apparatus determines a relative capacitance change associated with a first frequency and a desired frequency from a look-up table. The apparatus adjusts a capacitor circuit in the VCO based on the determined relative capacitance change determined from the look-up table in order to tune from the first frequency to the desired frequency. The apparatus determines that the frequency provided by the VCO is a second frequency different than the desired frequency after adjusting the capacitor circuit. The apparatus performs an iterative search to further adjust the capacitor circuit when a difference between the second frequency and the desired frequency is greater than a threshold.

A system is disclosed for a voltage controlled oscillator (“VCO”) having a large frequency range and a low gain. Passive or active circuitry is introduced between at least one VCO cell in the voltage controlled oscillator and the voltage source for the VCO cell which reduces a gain value for the VCO to maintain stability of the system.

An injection locking oscillator (ILO) comprising a tank circuit having a digitally controlled capacitor bank, a cross-coupled differential transistor pair coupled to the tank circuit, at least one signal injection node, and at least one output node configured to provide an injection locked output signal; a digitally controlled injection-ratio circuit having an injection output coupled to the at least one signal injection node, configured to accept an input signal and to generate an adjustable injection signal applied to the at least one injection node; and, an ILO controller connected to the capacitor bank and the injection-ratio circuit configured to apply a control signal to the capacitor bank to adjust a resonant frequency of the tank circuit and to apply a control signal to the injection-ratio circuit to adjust a signal injection ratio.

The invention relates to a method for operating control equipment (1) of a resonance circuit (2), wherein the control equipment (1) comprises at least two circuit elements (8, 9) connected in series, in particular each comprising a recovery diode (13, 14) connected in parallel, between which a connection (6) of the resonance circuit (2) is connected. According to the invention, the circuit elements (8, 9) are actuated as a function of the voltage detected at the connection (6). The invention further relates to control equipment (1) of a resonance circuit (2).

Various techniques for generating an output clock based on a reference clock. This disclosure relates to generating an output clock signal based on a reference clock signal. In one embodiment, a method includes generating, using information received from a control circuit, an output clock signal using both a first number of edges or an input clock signal and a second, different number of edges of the input clock signal. In this embodiment, the control circuit runs at a frequency that is less than a frequency of the input clock signal. The received information may indicate, for a pulse of the output clock signal, whether the pulse should be generated using the first number of edges or the second number of edges. In some cases, the second number of edges may be the first number of edges plus one. The first and second number of edges may be programmable quantities.

A current output control device is provided that includes: a current cell array section including plural current cell circuits that are each connected in parallel between a first terminal (power source) and a second terminal (ground) that connect between the first terminal and the second terminal in by operation ON so as to increase control current flowing between the first terminal and the second terminal; and a code conversion section (decoder) that generates signals (row codes, column codes) to ON/OFF control current cells so as to change the number of current cells that connect the first terminal and the second terminal according to change in an externally input code and that inputs the generated signals to the current cell array section.

A ring oscillator circuit causing a pulse signal to circulate around a circle to which an even number of inverting circuits are connected in a ring, wherein one of the inverting circuits is a first starting inverting circuit, which drives a first pulse signal according to a control signal, another of the inverting circuits is a second starting inverting circuit, which drives a second pulse signal based on a leading edge of the first pulse signal, still another is a third starting inverting circuit, which drives a third pulse signal based on the leading edge of the first pulse signal after the second pulse signal is driven, and the first to third starting inverting circuits are arranged within the circle of the inverting circuits in order of the third, second, and first pulse signals in traveling directions of the pulse signals.

An enhanced negative resistance voltage controlled oscillator (VCO) circuit is provided, in which a parallel connection of a capacitor and a resistor configured to provide frequency-dependent transconductance is present across source nodes of a first pair of field effect transistors in which gate nodes and drain nodes are cross-coupled. The source nodes of the first pair of field effect transistors are electrically shorted to drain nodes of a second pair of field effect transistors of which the gate nodes are electrically shorted to the gate nodes of the first pair of field effect transistors. The parallel connection of the capacitor and the resistor includes a parallel connection of a capacitor and a resistor such that the net transconductance of the first pair of field effect transistors is less at low frequencies where thermal noise and flicker noise are dominant part of the phase noise than at the operational frequency range.

A crystal controlled oscillator includes a crystal package and an IC chip board that includes an IC chip integrating an oscillator circuit. The crystal package includes a first container, a crystal resonator, a lid body, and an external terminal at an outer bottom surface of the first bottom wall layer of the first container. The IC chip integrates an oscillator circuit disposed at an outer bottom surface of the first bottom wall layer of the crystal package. The oscillator circuit connects to the lower side excitation electrode of the crystal resonator from the external terminal to an input side with high impedance. The oscillator circuit connects to the upper side excitation electrode to an output side with low impedance. The upper side excitation electrode is a shielding electrode of the crystal resonator.

An apparatus is disclosed that includes a first cross-coupled transistor pair, a second cross-coupled transistor pair, at least one capacitance unit, and an inductive unit. The first cross-coupled transistor pair and second cross-coupled transistor pair are coupled to a pair of first output nodes and a pair of second output nodes, respectively. The at least one capacitance unit is coupled to at least one of the pair of first output nodes and the pair of second output nodes. The inductive unit is coupled to the first cross-coupled transistor pair at the first output nodes and coupled to the second cross-coupled transistor pair at the second output nodes. The inductive unit generates mutual magnetic coupling between one of the first output nodes and one of the second output nodes and between the other of the first output nodes and the other of the second output nodes.

An assembly structure of an electronic control unit and a coil assembly of a solenoid valve for an electronic brake system connected to the electronic control unit having a printed circuit board and applying power to the solenoid valve. The coil assembly is penetrated to allow an upper portion of the solenoid valve to be fitted thereinto, and includes a cylindrical bobbin provided with a coil and a coil case. The electronic control unit is provided with a housing having an insertion groove and joined to the hydraulic control unit, the printed circuit board being disposed spaced apart from the coil assembly, and the housing is provided with an elastic member having one end contacting the printed circuit board and the other end contacting the coil case. The elastic member is configured with a coil spring to produce different elastic forces.

Pressure relief/drainage valve for a concrete pumper having a valve body with an axially extending passageway through which concrete flowing in a pumping line passes, an outlet port in a side wall of the passageway, and a valve member which prevents concrete from passing through the port when the valve is a closed position and permits concrete to discharge through the outlet port when the valve is in an open position.

A fluid control valve includes an inflow channel for introducing fluid, an outflow channel for discharging the fluid, a valve seat, a valve body for blocking/allowing communication between the inflow channel and the outflow channel in association with a movement thereof into contact with or away from the valve seat, and a solenoid configured to apply a magnetic force to the valve body, the magnetic force being generated in response to supply of electric power to the solenoid. The inflow channel is formed through the core of the solenoid so that the core and the fluid comes into contact with each other in the inflow channel.

In a control device for a technical processing plant, a pneumatically driven actuator having an actuator stem is provided together with a valve operated by the actuator, the valve having a valve stem. A valve element is attached to the valve stem. A stem connector connects the two stems to each other for a forced transmission of axial actuating movements and for modifying an axial distance between adjacent ends of the valve stem and the actuator stem to adjust a total axial length of the two stems. The stem connector comprises two half-shells connected to each other, and two positioning devices are provided for a friction-locking coupling of the half-shells to the respective ends. At least one of the positioning devices is designed to modify an axial attachment position of the half-shells along one of the stems.

A solenoid valve, the magnet armature of which is designed to be movable relative to a first valve-closing element, for which purpose the first valve-closing element is accommodated telescopically in a coupling element attached to the magnet armature, wherein the coupling element is guided along the inner wall of a guide sleeve inserted in the valve housing in order to align the magnet armature precisely with the first valve-closing element in the direction of a second valve-closing element which is likewise accommodated in the guide sleeve.

A method and device for the production of books, including: moving book blocks successively along a conveying section of a book production line; supplying a stack of book cases to the book production line; identifying a marking on each of the book blocks and the book cases; transmitting an identified marking on at least one book case to a machine control of the book production line; assigning a dataset stored in the machine control for a sequence of book cases to the supplied stack; determining a sequence in the machine control for book blocks positioned on the conveying section; comparing the dataset for the sequence of the book cases to the sequence of the book blocks; and removing and/or supplying at least one book block from or to the conveying section if the sequence of the book blocks deviates from the sequence of the book cases using the machine control.

A sheet processing apparatus which is capable of completing a bound document containing appropriately Z-folded sheets when performing folding together with edge cutting and binding. The sheet processing apparatus controls a Z-folding process, a cutting process, and a binding process for a sheet. A first folding position from a free end of the sheet coincides with a position corresponding to half a width of the sheet excluding a cut width of the sheet a binding margin, when the Z-folding process, the cutting process, and the binding process are executed.

In a first step, in a printed material web (1) moved in a feed direction, a first material web part (5) which is formed by a material web section (1a)is folded against the rest of the material web (6) that is formed from two material web portions (1b, 1c)).In the region of a connecting line (2b) extending between neighbouring material web sections (1b, 1c) the two material web parts (5,6) are connected to one another by a means of a bonding adhesive. In a subsequent step the material web (1) is folded again along a line (2b) extending between two neighbouring material web sections. (1b, 1c)All material web sections (1a, 1b, 1c) lie above one another. Subsequently, multi-page sub-products (11), the pages (12a, 12b, 12c) of which are connected to one another in the region of the spine (13) of the sub-product, are separated from the twice-folded material web (1). Finally, the sub-products (11) are placed on top of one another to form a stack (16) and are connected to one another in the region of the spine (13) thereof by means of a bonding adhesive.

This invention provides a technique of preventing a collision between an original document and a printing material on a conveyance path when an image forming apparatus executes both additional printing on the original document and printing on the printing material. In a case where both additional printing on an original document and printing on a printing material are executed, the image forming apparatus according to one aspect of the invention conveys a read original document to a transfer unit through a conveyance path commonly used for an original document and sheet, and prints an image to be added on the original document. After the original document is conveyed to the transfer unit through the conveyance path, the image forming apparatus feeds a sheet from a sheet feeding unit to the conveyance path, and performs copying on the sheet in the transfer unit.

A printing control apparatus according to one aspect of this invention controls to print images on sheets based on image data of a plurality of pages, generate a bookbinding product by executing folding processing for the image-printed sheets, and output the bookbinding product. The printing control apparatus further accepts the position of an insertion sheet to be inserted into the sheets for which the folding processing is executed, and controls to output a plurality of bookbinding products by using, as a reference, the accepted position of the insertion sheet.

A sheet binding apparatus which forms concavity and the convexity on a sheet bundle including a plurality of sheets in a thickness direction so as to bind the sheet bundle, the sheet binding apparatus includes: a pair of concave-convex members, each of which has concave-convex portion in the thickness direction of the sheet bundle and which forms the concavity and the convexity on the sheet bundle in the thickness direction while niping the sheet bundle therebetween; wherein in the pair of concave-convex members, one of the concave-convex members has a greater difference in height of the concave-convex portion than that of the other concave-convex member which engages with the above-described concave-convex member.

The present invention is directed to providing a mechanism for allowing a user to easily take out print products discharged onto a plurality of sheet discharge trays in the discharge order. A control method for controlling a sheet processing apparatus for performing control to discharge sheets onto a plurality of sheet discharge trays includes storing, in a storage unit, the discharge order in which sheets have been discharged onto equal to or more than two sheet discharge trays by executing a job, and performing, upon reception of a take-out instruction for taking out in the discharge order the sheets discharged by executing the job, processing for allowing a user to take out the sheets discharged onto the equal to or more than two sheet discharge trays, in the discharge order stored in the storage unit.

A sheet processing apparatus and a method of controlling the same align sheets stacked on a stacking unit, by causing a first alignment member and a second alignment member to come into contact with edges of a sheet stacked on the stacking unit in a sheet width direction. In a case that a second sheet that is different from a first sheet stacked on the stacking unit is to be stacked on the first sheet and aligned using the first alignment member and the second alignment member, control is performed to discharge a partition sheet onto the first sheet stacked on the stacking unit.

A mechanism capable of changing an upper limit number of sheets for a post-process is provided. To achieve this, a control method for controlling a sheet processing apparatus which performs the post-process for the sheets on which images are formed, comprising: storing, in a storage unit, the upper limit number of sheets to which the post-process can be performed; and changing the upper limit number of sheets stored in the storage unit is provided.

The present invention relates generally to a semiconductor device and, more specifically, to optimizing the creep-age distance of the power semiconductor device and a preparation method thereof. The power semiconductor device includes a chip mounting unit with a die paddle and a plurality of leads arranged side by side located close to one side edge of the die paddle in a non-equidistant manner, a semiconductor chip attached on the die paddle, and a plastic packaging body covering the die paddle, the semiconductor chip, where the plastic packing body includes a plastic extension portion covering at least a part of a lead shoulder of a lead to obtain better electrical safety distance between the terminals of the semiconductor device, thus voltage creep-age distance of the device is increased.

Some implementations provide a structure that includes a first package substrate, a first component, a second package substrate, a second component, and a third component. The first package substrate has a first area. The first component has a first height and is positioned on the first area. The second package substrate is coupled to the first package substrate. The second package substrate has second and third areas. The second area of the second package substrate vertically overlaps with the first area of the first package substrate The third area of the second package substrate is non-overlapping with the first area of the first package substrate. The second component has a second height and is positioned on the second area. The third component is positioned on the third area. The third component has a third height that is greater than each of the first and second heights.

The stack package includes a first semiconductor package and a second semiconductor package. The first semiconductor package includes a first substrate having a first modulus and at least one semiconductor chip mounted on the first substrate. The second semiconductor package stacked on the first semiconductor package and includes a second substrate having a second modulus and at least one semiconductor chip mounted on the second substrate. The second modulus is less than the first modulus. Even in the event that the first semiconductor package is under severe warpage due to a temperature change, the flexible second substrate, which includes e.g., polyimide or poly ethylene terephthalate, of the second semiconductor package may be less sensitive to the temperature change, thereby improving reliability of the stack package.

A semiconductor device comprises a first semiconductor chip including a first substrate and a plurality of first metal lines formed over the first substrate and a second semiconductor chip bonded on the first semiconductor chip, wherein the second semiconductor chip comprises a second substrate and a plurality of second metal lines formed over the second substrate. The semiconductor device further comprises a conductive plug coupled between the first metal lines and the second metal lines, wherein the conductive plug comprises a first portion formed over a first side of a hard mask layer, wherein the first portion is of a first width and a second portion formed over a second side of the hard mask layer, wherein the second portion is of a second width greater than or equal to the first width.

A through silicon via with sidewall roughness and methods of manufacturing the same are disclosed. The method includes forming a via in a substrate and roughening a sidewall of the via by depositing material within the via. The method further includes removing a backside of the substrate to form a through via with a roughened sidewall structure.

An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a lower conductive feature in a lower low-k (LK) dielectric layer; a first etch stop layer (ESL) over the lower conductive feature, wherein the first ESL comprises a metal compound; an upper LK dielectric layer over the first ESL; and an upper conductive feature in the upper LK dielectric layer, wherein the upper conductive feature extends through the first ESL and connected to the lower conductive feature. The interconnect structure may further include a second ESL between the upper LK dielectric layer and the first ESL, or between the first ESL and the lower conductive feature, wherein the second ESL comprises a silicon compound.

An embodiment is an integrated circuit structure including a first die attached to a second die by a first connector. The first connector includes a solder joint portion between a first nickel-containing layer and a second nickel-containing layer, a first copper-containing layer between the first nickel-containing layer and the solder joint portion, and a second copper-containing layer between the second nickel-containing layer and the solder joint portion.

Systems, manufactures, methods and/or techniques for a merged fiducial for chip packages are described. According to some embodiments, an integrated circuit package may include a package substrate having a first side and a second side, a plurality of conductive traces coupled to the first side and a plurality of balls disposed on the second side. The balls may be adapted to electrically connect the laminate package to a circuit board. The integrated circuit package may include a plurality of ball pads disposed on the second side, the ball pads being adapted to electrically connect the plurality of balls to the plurality of conductive traces. One or more of the ball pads may be uniquely shaped when compared to the rest of the plurality of ball pads, optionally, to serve as a fiducial to designate an A1 pin or ball of the laminate package.

A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).

In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.