A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

A method of making a semiconductor device can include providing a wafer comprising a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface. A photosensitive layer can be formed over the wafer and on a backside of each of the plurality of semiconductor die within the wafer with a coating machine. An identifying mark can be formed within the photosensitive layer for each of the plurality of semiconductor die with a digital exposure machine and a developer, wherein a thickness of the identifying mark is less than or equal to 50 percent of a thickness of the photosensitive layer. The photosensitive layer can be cured. The wafer can be singulated into a plurality of semiconductor devices.

A semiconductor package is provided, including: an insulating base body having a first surface with an opening and a second surface opposite to the first surface; an insulating extending body extending outward from an edge of the first surface of the insulating base body, wherein the insulating extending body is less in thickness than the insulating base body; an electronic element having opposite active and inactive surfaces and disposed in the opening with its inactive surface facing the insulating base body; a dielectric layer formed in the opening of the insulating base body and on the first surface of the insulating base body, the insulating extending body and the active surface of the electronic element; and a circuit layer formed on the dielectric layer and electrically connected to the electronic element. The configuration of the insulating layer of the invention facilitates to enhance the overall structural rigidity of the package.

A semiconductor device includes a first moisture-resistant ring disposed in a peripheral region surrounding a circuit region on a semiconductor substrate in such a way as to surround the circuit region and a second moisture-resistant ring disposed in the peripheral region in such a way as to surround the first moisture-resistant ring.

A semiconductor mounting apparatus includes a storing unit that stores a liquid or a gas, a contact unit that comes into contact with a semiconductor chip when the storing unit is filled with the liquid or the gas, and a sucking unit that sucks up the semiconductor chip to bring the semiconductor chip into close contact with the contact unit.

A system for determining thickness variation values of a semiconductor substrate comprises a substrate vacuumed to a pedestal that defines a reference plane for measuring the substrate. A measurement probe assembly determines substrate CTV and BTV values, and defines a substrate slope angle. A thermal bonding assembly attaches a die to the substrate at a bonding angle congruent with the substrate slope angle. A plurality of substrates are measured using the same reference plane on the pedestal. Associated methods and processes are disclosed.

A bump-on-trace (BOT) interconnection in a package and methods of making the BOT interconnection are provided. An embodiment BOT interconnection comprises a landing trace including a distal end, a conductive pillar extending at least to the distal end of the landing trace; and a solder feature electrically coupling the landing trace and the conductive pillar. In an embodiment, the conductive pillar overhangs the end surface of the landing trace. In another embodiment, the landing trace includes one or more recesses for trapping the solder feature after reflow. Therefore, a wetting area available to the solder feature is increased while permitting the bump pitch of the package to remain small.

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.

Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.

A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.

A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor.

To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

A method of fabricating a semiconductor device includes forming a gate strip including a dummy electrode and a TiN layer. The method includes removing a first portion of the dummy electrode to form a first opening over a P-active region and an isolation region. The method includes performing an oxygen-containing plasma treatment on a first portion of the TiN layer; and filling the first opening with a first metal material. The method includes removing a second portion of the dummy electrode to form a second opening over an N-active region and the isolation region. The method includes performing a nitrogen-containing plasma treatment on a second portion of the TiN layer; and filling the second opening with a second metal material. The second portion of the TiN layer connects to the first portion of the TiN layer over the isolation region.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.

A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP layer formed over the first SiP layer and in the recess, wherein the second SiP layer has a phosphorus concentration higher than that of the first SiP layer.

A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

Self adjusting and/or locking buckle tongue assemblies for use with occupant restraint systems in vehicles are described herein. In one embodiment, a buckle tongue assembly includes a plate having a tongue portion configured to cooperatively engage a corresponding buckle assembly. The buckle tongue assembly of this embodiment can further include first and second web gripping portions carried by the plate. The second web gripping portion is configured to move relative to the first web gripping portion between a first position in which the web gripping portions are spaced apart to permit movement of a web therebetween, and a second position in which the web gripping portions are engaged or interlocked to clamp the web therebetween.

A wire gripping assembly for securing an electrical box or light fixture to a support. The wire gripping assembly includes a wire gripping device having a body with open channels and a through bore, a clip member having legs for sliding engagement within the channels, a cable having an end connector thereon, and a thumbscrew for adjusting the clip member with respect to the body. The thumbscrew includes a head having an outer circumference with serrations to enable hand tightening and an end with a slot for engagement by a screwdriver or similar tool. The wire gripping assembly eases installation of an electrical device to an overhead support by enabling a two-step connection including initial hand tightening using the serrated outer surface of the thumbscrew and subsequent secure tightening by engaging the slot of the thumbscrew with a screwdriver or similar tool.

A respiratory mask assembly for delivering breathable gas to a patient includes a frame and at least one locking clip. The frame has a main body and a side frame member provided on each lateral side of the main body, at least one of the side frame members including a locking clip receiver assembly. The at least one locking clip has a main body providing a front portion adapted to be removably coupled with the at least one locking clip receiver assembly and a rear portion adapted to be removably coupled to a headgear assembly. The rear portion includes a cross bar that forms an opening through which a strap of the headgear assembly can pass and be removably coupled with the cross bar, and the front portion includes at least one resiliently flexible spring arm that is flexible within the plane of the main body.

The present disclosure relates to an apparatus for fastening a power semiconductor using an integral springy (elastic) clip, capable of fixing a power semiconductor, such as a diode and a MOSFET, using elasticity of a U-shaped clip by integrally molding the clip onto a housing of a plastic module. The apparatus includes an elastic (springy) clip integrally molded onto a lower surface of the housing and downwardly curved into a U-like shape in a bridge module in which a bridge of the power semiconductor protrudes through a through hole of the housing to be connected to a printed circuit board, whereby the power semiconductor is fixed by a force that the housing presses the power semiconductor.

A clamp assembly includes a body member having a cable groove formed therein to receive a cable. A keeper is connected to the body member and has a lower surface adapted to engage the cable received in the cable groove. A biasing member is disposed between the keeper and the body member.

A casket shell assembly and method provide for covering an economical or plain casket with a reusable decorative shell. The assembly includes a casket and a shell. The shell has a perimeter wall, an open top, and an open bottom. The shell receives the casket through the open top. A lip coupled to the perimeter wall of the shell supports the casket when the casket is inserted into the shell. A lid is coupled to the perimeter wall selectively covering the open top of the shell when the lid is in a closed position. A plurality of straps is positioned in the shell extending between the shell and the casket. Each of the straps has opposite free ends extendable through the open top of the shell for facilitating lifting of the casket from the shell.

A grave marker assembly that can be removably mounted and secured to a support surface such as a lawn crypt lid. The grave marker assembly has a fastening system that is not exposed to view and yet allows the grave marker to be easily installed and removed. The fastening system includes a channel and interior opening formed on a base member that is adapted to receive a fastener. The fastener in turn is adapted to be inserted into an opening formed on the crypt lid or other support surface. The assembly further includes a multi-function frame disposed along the outer periphery of the memorial marker that can serve as a decorative feature and draining functions.

Disclosed herein are a hygienic handle assembly and related methods for automatically advancing a clean portion of a protective sleeve over a handle after use of the handle by a person. In one embodiment, an exemplary hygienic handle assembly comprises a pair of first magnetic couplers, each having a passage therethrough, and a handle extending between the pair of first magnetic couplers and having a second magnetic coupler at each of its opposing ends. Each of the second magnetic couplers may be configured to be located within at least a portion of a corresponding first magnetic coupler, wherein magnetic fields of the first magnetic coupler repel magnetic fields of the second magnetic couplers received therein such that each second magnetic coupler is magnetically suspended within the corresponding first magnetic coupler.

A lock assembly includes a coupling mechanism connected to a spindle assembly. The coupling mechanism has an outer sleeve having a longitudinal interior opening that extends along a first axis. An operator handle includes a proximal lock core opening, and a distal shaft portion having an axial opening configured to receive the outer sleeve. The distal shaft portion and the outer sleeve are configured to define a through path oriented across the longitudinal interior opening of the outer sleeve. A portion of the through path at the outer sleeve is configured to threadably receive a setscrew to fasten the operator handle to the outer sleeve. A keyed lock core has a tailpiece that is positioned in the longitudinal interior opening of the outer sleeve to obstruct the through path and block access to the setscrew via the through path to prevent unauthorized removal of the operator handle.

A method of height adjusting a hanger bolt with a threaded shaft and side flats in a threaded retainer of a bogey proceeds by rotating the bolt to adjust the axial position and height of the bolt relative to the retainer. A keeper of a lock mechanism housed within a body of the bogey is slid into an engaged position against flats of the bolt in order to prevent further rotation of the bolt relative to the retainer.

A bushing is for supporting a movable cylindrical body within a housing, the housing having a central axis, an inner circumferential surface and an annular groove formed in the surface. The bushing includes a plurality of generally arcuate tube segments disposable within the groove and alignable circumferentially about the housing axis so as to form a generally tubular body configured to slidably support the cylindrical body. Preferably, each tube segment is formed of a generally rigid metallic material.

An adjuster assembly for manually adjusting the position of a brake pad relative to a brake rotor of a disc brake, the assembly comprising: a continuous wear sensor; and a manual rewind apparatus to manually reset the position of the brake pad when replacement thereof is required; the manual rewind apparatus comprising a shaft arranged to extend into a housing of the disc brake; wherein the continuous wear sensor is arranged to be located within the housing of the disc brake and is located proximate to the shaft.

The present disclosure provides a torque tube comprising a barrel portion disposed between a flange and a back leg, the flange extending radially inward towards an axis of rotation and the back leg extending radially outward from the barrel portion. The torque tube further comprises a channel defined by a channel wall and disposed in at least one of the barrel portion and the flange, the channel being configured to receive a sacrificial member.

A torque tube for use in a disk brake system in accordance with various embodiments includes a backleg having a reaction plate and a foot extending axially away from the reaction plate. The torque tube also includes a barrel having a tubular structure having an axis and an inner surface configured to receive the foot.

A railcar brake beam assembly including a brake beam formation having a tension member, a compression member and strut, and with the strut defining an axis for the brake beam assembly. First and second brake head assemblies are disposed to opposite lateral sides of the axis, with each brake head assembly being operably carried by the brake beam formation and includes a guide member extending in a direction away from the axis. The first and second brake head assemblies are generally centered laterally relative to the axis of the brake beam assembly. A distal end of the guide member on the first brake head assembly is disposed a different lateral distance from the axis of the brake beam assembly than is a distal end of the guide member on the second brake head assembly to minimize lateral shifting movements while maintaining adequate clearances for permitting reciprocal moments of the brake beam assembly during application of braking forces. A method of designing a brake beam assembly for a railcar is also disclosed.

A friction disk brake system may comprise a plurality of rotor friction disks and a plurality of stator friction disks. At least one of the friction disks may be a split disk friction disk. The split disk friction disk may comprise a first disk half and a second disk half. A carbon foam damping feature may be located between the first disk half and the second disk half.

A plate assembly for a multi-disk brake system is provided. The plate assembly includes at least one of a pressure plate or an end plate and a floating plate wear liner mounted against the at least one of the pressure plate or the end plate. The floating plate wear liner is configured to contact a contact surface of an adjacent rotatable friction disk in response to the multi-disk brake system being actuated.

A heat dissipation structure for a brake pad is provided for being assembled to a caliper device. The caliper device includes a caliper body, and the caliper body has a receiving space. The heat dissipation structure includes: a main body, integrally extruded from aluminum and cut to have an ultimate appearance, including a plate body and a heat dissipation portion integrally extending from the plate body, the plate body for being disposed on the caliper body and at least partially extending into the receiving space, when the main body is assembled to the caliper body, the heat dissipation portion is exposed outside the caliper body. A brake pad assembly is further provided, including a heat dissipation structure as described above, further including a brake pad, the brake pad disposed on a lateral face of the plate body.

The present application provides a scrubber for a gasification system. The scrubber may include a column, an inlet for a flow of dirty syngas, an inlet diffuser system positioned about the inlet, and an outlet for a flow of cleaned syngas.

A pre-processing assembly and method for processing fuel feedstock containing oxygen and hydrocarbons having higher and lower hydrocarbon content for a fuel cell, wherein the pre-processing assembly has a deoxidizing bed for reducing oxygen in the fuel feedstock and a pre-reforming bed for reducing higher hydrocarbon content in the fuel feedstock and wherein the deoxidizing bed and the pre-reforming bed are disposed within a common reaction vessel such that the fuel feedstock first passes through the deoxidizing bed and thereafter through the pre-reforming bed. The pre-reforming assembly may further include a propane processor bed for processing propane and propylene in the fuel feedstock, where the propane processor bed is disposed within the common reaction vessel with the deoxidizing bed and the pre-reforming bed.

A gasification quench chamber is disclosed. The gasification quench chamber includes a reservoir that contains liquid coolant in its lower portion and an exit for the cooled syngas in its upper portion; a dip tube that is configured to introduce a syngas mixture to contact the liquid coolant which produces the cooled syngas; a cooling device configured to further cool the cooled syngas in its upper portion; and a stability device in the lower portion that is configured to mitigate coolant level fluctuation and sloshing. In an embodiment of the quench chamber, the cooling device includes a heat exchanger pipe. A quench chamber and scrubber assembly is also disclosed.

A binding screw for a wire connection assembly comprises a driving section, a threaded section, and a contact section. The contact section has a tapered penetration portion establishing electrical contact with a stranded wire. A length of the penetration portion is at least three-quarters of a diameter of the binding screw in the threaded section.

A force biased spring probe pin assembly includes a barrel member having a barrel wall defining an elongate internal cavity with a lower end and an upper end. The assembly also includes a first plunger member reciprocally mounted in the internal cavity proximate the lower end of the internal cavity. A spring member is positioned in the internal cavity between the plunger member and the second end of the internal cavity. Three or more conductive bearings are positioned in the internal cavity in contact with the first plunger member and the spring member. A force biased spring probe pin assembly includes a barrel member having a barrel wall defining an elongate internal cavity with a lower end and an upper end. The assembly also includes a first plunger member reciprocally mounted in the internal cavity proximate the lower end of the internal cavity and a second plunger member reciprocally mounted in the internal cavity proximate the upper end of the internal cavity. A spring member is positioned in the internal cavity between the first plunger member and the second plunger member. Three or more conductive bearings are positioned in the internal cavity in contact with the first plunger member and the spring member.

A force-biased spring probe pin assembly includes a barrel member having a barrel wall defining an elongate internal cavity with a lower end and an upper end. The assembly also includes a first plunger member reciprocally mounted in the internal cavity proximate the lower end of the internal cavity. A spring member is positioned in the internal cavity between the plunger member and the second end of the internal cavity. At least one cavity formed in the plunger member with a conductive bearing in the cavity in electrical contact with the plunger and with the wall of the barrel member. A force-biased spring probe pin assembly includes a barrel member having a barrel wall defining an elongate internal cavity with a lower end and an upper end. The assembly also includes a first plunger member reciprocally mounted in the internal cavity proximate the lower end of the internal cavity and a second plunger member reciprocally mounted in the internal cavity proximate the upper end of the internal cavity. A spring member is positioned in the internal cavity between the first plunger member and the second plunger member. At least one cavity formed in the first plunger member with a first conductive bearing in the cavity in electrical contact with the first plunger and with the wall of the barrel member and at least one cavity formed in the second plunger member with a second conductive bearing in the cavity in electrical contact with the second plunger and with the wall of the barrel member.

Subsea high voltage connection assembly (10) comprising a first section (100) having a first section body (104) to which a set of first connector(s) (111) is arranged and a second section (200) having second section body (204) to which a set of second connector(s) (211) is arranged. The assembly (10) further has a section body movement arrangement (103, 400, 9, 123) adapted to move one of the section bodies (104, 204) towards and away from the other section body, between a disengaged position and an engaged position. Further, the assembly (10) has a connector movement arrangement (105, 400). Also disclosed are a method and a subsea high voltage wet mate connector assembly.

A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive film on the insulating film while filling the recess with the conductive film; and (d) polishing the conductive film. Step (d) includes a first polishing substep of using a first polisher pad conditioned with a first dresser and a second polishing substep of using a second polisher pad conditioned with a second dresser different from the first dresser.