Iffat Fatima’s films capture the trauma of the families of the disappeared.

Berlin ; Boston : De Gruyter [2024]

Too many digital nannies are robbing us of the power of memory

The mind can be a double-edge sword, serving up both good and bad memories

Study suggests activating PPAR receptor leads to increased cellular connections in hippocampus

Want to feel a bit nostalgic amid this Covid-19 lockdown? Let us make you revisit the 90s era with these immensely popular bike and scooter advertisements.

Grace Millane's family has given hundreds of care packages to patients, nurses, doctors and carers battling coronavirus.The family of the murdered British backpacker has donated more than 300 bags full of toiletries to hospitals...

IN 1993, 12-year-old Zoe Hitchman passed away after falling ill with meningitis.

For Heusler-type Ni–Mn–Ga ferromagnetic shape-memory alloys, the configuration of the martensite variants is a decisive factor in achieving a large magnetic shape-memory effect through field-induced variant reorientation. Based upon the spatially resolved electron backscatter diffraction technique, the microstructural evolution associated with the martensitic transformation from austenite to seven-layered modulated (7M) martensite was investigated on a polycrystalline Ni53Mn22Ga25 alloy. It was clearly shown that grain interior nucleation led to the formation of diamond-shaped 7M martensite within the parent austenite matrix. This diamond microstructure underwent further growth through an isotropic expansion with the coordinated outward movement of four side habit planes, followed by an anisotropic elongation with the forward extension of a type-I twin pair. A two-step growth model is proposed to describe the specific morphology and crystallography of 7M martensite. In addition, the habit planes were revealed to possess a stepped structure, with the {1 0 1}A plane as the terrace and the {0 1 0}A plane as the step. The characteristic combination of martensite variants and the underlying mechanism of self-accommodation in the martensitic transformation have been analysed in terms of the minimum total transformation strain, where the deformation gradient matrix was constructed according to the experimentally determined orientation relationship between the two phases. The present results may deepen the understanding of special martensite microstructures during the martensitic transformation in ferromagnetic shape-memory alloys.

Grey gets a tech news update, Myke is looking back, and they both answer some #askcortex questions.

Hearing aids and cataract surgery can slow mental decline, say new studies.

A new study finds that we cannot remember phone numbers anymore. Shocking!

Famed naturalist David Attenborough says that despite his scripts taking longer to write, he has absolutely no plans of retiring.

Extinctions are a wake-up call to protect the dwindling species that still exist.

In 2013, Bush shaved his head in solidarity with a young toddler with leukemia.

The haka is a traditional Maori routine performed at many ceremonies in New Zealand. Here, two groups respond to the terrorist attack on 2 New Zealand mosques.

You can begin making your memory scrapbook, sure to become a treasure to be shared from generation to generation with basic materials like patterned paper, rubber stamps, patterns, stencils, stickers, serrated- scissors, and the photos you already have.

The new $11.7 million senior living community will be a first of its kind within Maumee city limits

Oaks at Aiken opening in the Spring of 2020

16-22% of US adults suffer from sleep disorders, based on American Sleep Association figures. Now, the next generation of memory foam mattress from Somtex is providing in-house sleep therapy for all those looking to wake up feeling rejuvenated.

The development brings a new option for residents with Alzheimer's, dementia and other types of memory challenges to the Gainesville area.

A new 61,760 square-foot, two-story memory care community located in Coconut Creek, Florida.

A special ceremony was held yesterday at the Limmud FSU Conference in Minsk, the capital of Belarus, in memory of Lori Gilbert-Kaye, and was attended by many of the 600 Jewish participants.

Wondershare has released Recoverit Free, providing users with 100MB of data recovery free of charge. Especially for memory card photo recovery.

Say goodbye to your data loss woes! Wondershare's free recovery software helps users retrieve lost data from hard drives, memory cards and SD cards easily and quickly.

The special remembrance prayer and a minute's silence were conducted by the Chief Rabbi of Minsk, Rabbi Shneur Deutsch and Chief Rabbi of the Progressive Jewish community of Belarus Grisha Abramovich.

This paper addresses the problem of efficiently achieving visual predictive control tasks. To this end, a memory of motion, containing a set of trajectories built off-line, is used for leveraging precomputation and dealing with difficult visual tasks. Standard regression techniques, such as k-nearest neighbors and Gaussian process regression, are used to query the memory and provide on-line a warm-start and a way point to the control optimization process. The proposed technique allows the control scheme to achieve high performance and, at the same time, keep the computational time limited. Simulation and experimental results, carried out with a 7-axis manipulator, show the effectiveness of the approach.

For decades, two-player (antagonistic) games on graphs have been a framework of choice for many important problems in theoretical computer science. A notorious one is controller synthesis, which can be rephrased through the game-theoretic metaphor as the quest for a winning strategy of the system in a game against its antagonistic environment. Depending on the specification, optimal strategies might be simple or quite complex, for example having to use (possibly infinite) memory. Hence, research strives to understand which settings allow for simple strategies.

In 2005, Gimbert and Zielonka provided a complete characterization of preference relations (a formal framework to model specifications and game objectives) that admit memoryless optimal strategies for both players. In the last fifteen years however, practical applications have driven the community toward games with complex or multiple objectives, where memory -- finite or infinite -- is almost always required. Despite much effort, the exact frontiers of the class of preference relations that admit finite-memory optimal strategies still elude us.

In this work, we establish a complete characterization of preference relations that admit optimal strategies using arena-independent finite memory, generalizing the work of Gimbert and Zielonka to the finite-memory case. We also prove an equivalent to their celebrated corollary of great practical interest: if both players have optimal (arena-independent-)finite-memory strategies in all one-player games, then it is also the case in all two-player games. Finally, we pinpoint the boundaries of our results with regard to the literature: our work completely covers the case of arena-independent memory (e.g., multiple parity objectives, lower- and upper-bounded energy objectives), and paves the way to the arena-dependent case (e.g., multiple lower-bounded energy objectives).

In the future we can expect that artificial intelligent agents, once deployed, will be required to learn continually from their experience during their operational lifetime. Such agents will also need to communicate with humans and other agents regarding the content of their experience, in the context of passing along their learnings, for the purpose of explaining their actions in specific circumstances or simply to relate more naturally to humans concerning experiences the agent acquires that are not necessarily related to their assigned tasks. We argue that to support these goals, an agent would benefit from an episodic memory; that is, a memory that encodes the agent's experience in such a way that the agent can relive the experience, communicate about it and use its past experience, inclusive of the agents own past actions, to learn more effective models and policies. In this short paper, we propose one potential approach to provide an AI agent with such capabilities. We draw upon the ever-growing body of work examining the function and operation of the Medial Temporal Lobe (MTL) in mammals to guide us in adding an episodic memory capability to an AI agent composed of artificial neural networks (ANNs). Based on that, we highlight important aspects to be considered in the memory organization and we propose an architecture combining ANNs and standard Computer Science techniques for supporting storage and retrieval of episodic memories. Despite being initial work, we hope this short paper can spark discussions around the creation of intelligent agents with memory or, at least, provide a different point of view on the subject.

Homomorphic encryption (HE) allows direct computations on encrypted data. Despite numerous research efforts, the practicality of HE schemes remains to be demonstrated. In this regard, the enormous size of ciphertexts involved in HE computations degrades computational efficiency. Near-memory Processing (NMP) and Computing-in-memory (CiM) - paradigms where computation is done within the memory boundaries - represent architectural solutions for reducing latency and energy associated with data transfers in data-intensive applications such as HE. This paper introduces CiM-HE, a Computing-in-memory (CiM) architecture that can support operations for the B/FV scheme, a somewhat homomorphic encryption scheme for general computation. CiM-HE hardware consists of customized peripherals such as sense amplifiers, adders, bit-shifters, and sequencing circuits. The peripherals are based on CMOS technology, and could support computations with memory cells of different technologies. Circuit-level simulations are used to evaluate our CiM-HE framework assuming a 6T-SRAM memory. We compare our CiM-HE implementation against (i) two optimized CPU HE implementations, and (ii) an FPGA-based HE accelerator implementation. When compared to a CPU solution, CiM-HE obtains speedups between 4.6x and 9.1x, and energy savings between 266.4x and 532.8x for homomorphic multiplications (the most expensive HE operation). Also, a set of four end-to-end tasks, i.e., mean, variance, linear regression, and inference are up to 1.1x, 7.7x, 7.1x, and 7.5x faster (and 301.1x, 404.6x, 532.3x, and 532.8x more energy efficient). Compared to CPU-based HE in a previous work, CiM-HE obtain 14.3x speed-up and >2600x energy savings. Finally, our design offers 2.2x speed-up with 88.1x energy savings compared to a state-of-the-art FPGA-based accelerator.

A spiking neuron-based working memory device is provided. The spiking neuron-based working memory device includes an input interface configured to convert input spike signals into respective burst signals having predetermined forms, and output a sequence of the burst signals, the burst signals corresponding to the input spike signals in a burst structure, and two or more memory elements (MEs) configured to sequentially store features respectively corresponding to the outputted sequence of the burst signals, each of the MEs continuously outputting spike signals respectively corresponding to the stored features.

Disclosed are a ferrocene-containing conductive polymer, an organic memory device using the conductive polymer and a method for fabricating the organic memory device. The conductive polymer may include a fluorenyl repeating unit, a thienyl repeating unit and a diarylferrocenyl repeating unit. The organic memory device may possess the advantages of rapid switching time, decreased operating voltage, decreased fabrication costs and increased reliability. Based on these advantages, the organic memory device may be used as a highly integrated, large-capacity memory device.

Shape memory and pseudoelastic martensitic behavior is enabled by a structure in which there is provided a crystalline ceramic material that is capable of undergoing a reversible martensitic transformation and forming martensitic domains, during such martensitic transformation, that have an elongated domain length. The ceramic material is configured as a ceramic material structure including a structural feature that is smaller than the elongated domain length of the ceramic material.

A perpendicular spin-transfer torque magnetic random access memory (STTMRAM) element includes a fixed layer having a magnetization that is substantially fixed in one direction and a barrier layer formed on top of the fixed layer and a free layer. The free layer has a number of alternating laminates, each laminate being made of a magnetic layer and an insulating layer. The magnetic layer is switchable and formed on top of the barrier layer. The free layer is capable of switching its magnetization to a parallel or an anti-parallel state relative to the magnetization of the fixed layer during a write operation when bidirectional electric current is applied across the STTMRAM element. Magnetic layers of the laminates are ferromagnetically coupled to switch together as a single domain during the write operation and the magnetization of the fixed and free layers and the magnetic layers of the laminates have perpendicular anisotropy.

A nano-ionic memory device is provided. The memory device includes a substrate, a chemically inactive lower electrode provided on the substrate, a solid electrolyte layer provided on the lower electrode and including a silver (Ag)-doped telluride (Te)-based nano-material, and an oxidizable upper electrode provided on the electrolyte layer.

A memory device includes a semiconductor channel, a tunnel dielectric layer located over the semiconductor channel, a first charge trap including a plurality of electrically conductive nanodots located over the tunnel dielectric layer, dielectric separation layer located over the nanodots, a second charge trap including a continuous metal layer located over the separation layer, a blocking dielectric located over the second charge trap, and a control gate located over the blocking dielectric.

Methods using a sequence of externally generated magnetic fields to initialize the magnetization directions of each of the layers in perpendicular MTJ MRAM elements for data and reference bits when the required magnetization directions are anti-parallel are described. The coercivity of the fixed pinned and reference layers can be made unequal so that one of them can be switched by a magnetic field that will reliably leave the other one unswitched. Embodiments of the invention utilize the different effective coercivity fields of the pinned, reference and free layers to selectively switch the magnetization directions using a sequence of magnetic fields of decreasing strength. Optionally the chip or wafer can be heated to reduce the required field magnitude. It is possible that the first magnetic field in the sequence can be applied during an annealing step in the MRAM manufacture process.

An approach for introspection of a software component and generation of a conditional memory dump, a computing device executing an introspection program with respect to the software component is provided. An introspection system comprises one or more conditions for generating the conditional memory dump based on operations of the software component. In one aspect, a computing device detects, through an introspection program, whether the one or more conditions are satisfied by the software component based on information in an introspection analyzer of the introspection program. In addition, the computing device indicates, through the introspection program, if the one or more conditions are satisfied by the software component. In another aspect, responsive to the indication, the computing device generates the conditional memory dump through the introspection program.

A double data rate memory physical interface having self checking loopback logic on-chip is disclosed. Disposed on the chip is a first linear feedback shift register, which is capable of generating a set of test data values that comprise at least two data bits. Also disposed on the chip is a second linear feedback shift register. The second linear feedback shift register is capable of generating a set of expected data values that match the test data values. Further, an internal loopback error check element is disposed on the chip. The internal loopback error check element is used to compare the set of expected data values with the set of test data values.

An apparatus is equipped with a storage device including an error correction circuit. The apparatus performs a test of the storage device according to a predetermined testing procedure, and records a time-point at which error correction of the storage device has been performed by the error correction circuit during performance of the test. The apparatus determines, with predetermined accuracy, a first position within the storage device on which the error correction has been performed, based on a test speed at which the test is performed, a time-period from the time-point to current time, and a second position within the storage device on which the test is being performed at the current time. Then, the apparatus performs the test predetermined times on a range included in the storage device and including the first position, according to a testing procedure that has been used at the time-point.

According to one embodiment, a memory controller includes: a first flash encoding unit that performs flash encoding on user data according to a first scheme to generate user data flash codes; an encoding unit that performs an error correction encoding process on the user data flash codes to generate parities; a second flash encoding unit that performs flash encoding on the parities according to a second scheme to generate parity flash codes; and a memory I/F that writes the user data flash codes and the parity flash codes to the nonvolatile memory.