A control method for boiler outlet temperatures includes predictive control of SH and RH desuperheater systems. The control method also includes control and optimization of steam generation conditions, for a boiler system, such as burner tilt and intensity, flue-gas recirculation, boiler fouling, and other conditions for the boiler. The control method assures a proportional-valve control action in the desuperheater system, that affects the boiler system.

An evaporator surface structure of a circulating fluidized bed boiler having a furnace that is enclosed by sidewalls and has a bottom and a ceiling. The evaporator surface structure includes at least one vertical and separate evaporator surface unit that is spaced apart from the sidewalls of the furnace. The at least one evaporator surface unit (i) is formed of planar water tube panels that extend from the bottom of the furnace to the ceiling of the furnace, and (ii) consists of two cross-wise joined vertical water tube panels.

A livestock guide and manipulator panel prod is disclosed by this invention wherein electronic shocking circuitry is provided in combination with a hand-held livestock guiding and directing panel having electronic prods of said circuitry arranged on the surface of the panel.

A simulation apparatus includes a storing unit that stores therein information about a shape of a blank piece to be cut out from raw wood, information about a final shape of a wooden piece obtained by compressing the blank piece, and image data of a surface of the blank piece. The apparatus also includes detecting unit that detects a knot appearing on the surface of the blank piece by image recognition using the image data; a shape estimating unit that estimates a shape of the detected knot using shape information on the blank piece; and a determining unit that determines, in accordance with the shape of the estimated knot, a cutting location and a cutting shape of the blank piece in such a manner that the cutting location and shape include a part and a thickness of the knot is substantially the same as that of the compressed blank piece.

A belt retractor has a frame (10), a belt spool (12) that is rotatably mounted in the frame (10), and a force limiter (22) that is adapted to reach a force limiting position. A guide-in mechanism (26) is provided which causes the force limiter (22) to reach the force limiting position as a function of the length of belt webbing withdrawn.

A locking retractor is disclosed, as are stretchers and cots using the retractor to secure a patient. The retractor includes structure for locking the retractor spool to prevent rotation in both directions. However, a cam is coupled to the shaft and is arranged relative to the locking structure to prevent the spool from locking during an initial portion of the spool's rotation, until a first locking point is reached. Once the first locking point has been reached, a clutch prevents the locking structure from engaging while the spool is still rotating, but the locking structure will engage to lock the spool in both directions once active rotation stops. A user-actuatable lever is provided externally that disengages the locking structure when actuated to allow the spool to extend and retract freely.

To provide a medium storing and advancing apparatus for inhibiting rotation of a drum when tapes are completely rewound from the drum. The apparatus includes reels supplying and winding up the tapes, a drum winding up the tapes supplied from the reels or rewinding wound-up tapes to supply the tapes to the reels, and an inhibiting mechanism inhibiting further rotation of the drum in a direction of rewinding the tapes when the drum completely rewinds the tapes, whereby the inhibiting mechanism inhibits the rotation of the drum.

A system for storing, rotating and feeding a high pressure hose. A first portion of the hose is disposable about the drum and a guide arm engages a second portion of the hose. An actuator assembly rotates a cage and the guide arm so that the guide arm rotates relative to the cage such that the hose is rotated. Relative rotation in one direction causes the first portion of the hose to uncoil from the drum and displace along the guide arm and causes a third portion of the high pressure hose in an output port to displace out of the output port away from the guide arm. Relative rotation in an opposite direction causes the second portion of the high pressure hose to coil about the drum and causes the third portion of the high pressure hose to displace into the housing.

In a webbing retractor, the center of a rack and rack-teeth in an axial direction of a pinion is placed on the opposite side of a leg plate side with respect to the central axis of a cylinder. The piston is acted upon by a tilting-force toward the leg plate side from the pinion. A stop portion of an upper stay is placed on another leg plate side of the leg plate. Even when the piston is acted upon by the tilting force toward the leg plate side from the pinion, the stop portion can stop the movement of the leg plate toward the other leg plate side, and tilting of the piston and the cylinder toward the leg plate side can be suppressed. Moreover, the need to increase the strength of a frame and so forth can be eliminated, so the webbing retractor can be made compact and lightweight.

An electrical system having an underlying structure resembling the double helix most commonly associated with DNA may be used to produce useful electromagnetic fields for various application.

A trough is cut in the ground surface by a rotating member. The rotating member displaces soil upward with respect to the ground surface and rearwardly with respect to a direction of travel of the rotating member. While the soil is in the air, slurry is deposited into the trough. The soil is then redirected downward to the trough to cover the slurry with the soil.

A method and apparatus for automating some of the tasks that heretofore required operator action at headland turns or similar events are provided. The present invention automates operation of lift assist wheels and/or gull wings, such as those found on a stack-fold implement, based on the position of the tractor hitch to which the implement is coupled. An operator may control the position of the implement, such as at a headland turn, by raising and lowering the tractor hitch using a remote control. The invention enables the planter to compare the tractor hitch position relative to an implement position and control operation of the implement accordingly without additional user inputs.

A seed meter is provided for use with a row crop planter or seed planter that includes a seed disk assembly that rotates within a meter housing cavity and that has a seed disk assembly cavity in which a vacuum pressure is applied for pulling seeds into seed pockets of a seed disk of the seed disc assembly. The vacuum pressure is applied to the seed disk assembly by pulling a vacuum airflow through a spindle that supports the seed disk assembly. A wiper seal is arranged in a fixed position within the seed disk assembly cavity and seals against the seed disk assembly as a support plate and seed disk of the seed disk assembly rotate over the wiper seal, so that the wiper seal creates a boundary between a vacuum zone and a non-vacuum zone inside of the seed disc assembly cavity.

A seed singulator for use with a vacuum disk having a seed face and a shoulder. The seed singulator has a first member and a second member supported by biasing members. The first member has upper lobes disposed at a radius of curvature slightly less than the outside radius of a row of apertures on a seed plane of the vacuum disk. The seed member has lower lobes disposed at a radius of curvature slightly greater than the inside radius than the row of apradius. The biasing members permit the lobes to move with the seed plane and the shoulder as the vacuum disk rotates thereby maintaining their position with respect to the apertures.

An agricultural implement includes a frame assembly configured to support a storage tank. The frame assembly includes a pair of longitudinal beams positioned on opposite lateral sides of the storage tank, and multiple cross members extending between the pair of longitudinal beams. A substantially flat upper surface of each cross member is secured to a lower surface of each longitudinal beam, and each cross member is configured to support the storage tank via contact between the substantially flat upper surface of the cross member and a substantially flat lower surface of the storage tank such that the substantially flat lower surface of the storage tank is positioned vertically below an upper surface of each longitudinal beam.

A seed singulator system for a seed planter may comprise a seed container including a housing defining an interior to hold seed. A seed pickup assembly may be configured to pick up seeds individually from the interior, and the pickup assembly defines a plurality of seed-retaining holes configured to hold seed when a vacuum is applied to the holes. A seed discharging assembly may be configured to discharge seed in a singular manner from the seed container. The seed discharge assembly may comprise a seed receiver structure configured to receive seeds from the seed pickup assembly, and may define a seed-receiving passage having an entry opening for a seed to pass through, with the seed-retaining holes being alignable with the entry opening. A seed ejecting structure may be configured to eject seeds one at a time from the seed pickup assembly into the entry opening of the seed receiver structure.

A paired row opener has a furrowing tip arranged to be selectively supported on a body of the opener. The furrowing tip includes a knife portion and a pair of wing portions extending rearwardly and outwardly therefrom where are separable together from the opener body. A pair of deflector wings are integrally formed on the opener body above inner edges of the respective wing portions which are abutted with the opener body so as to deflect disturbed soil away from a seam between the inner edge of the wing portions and the opener body. An insulated mounting block is fastened onto a rear bracket of the opener body which receives an anhydrous ammonia delivery tube therethrough so permit optional delivery of anhydrous ammonia at a location which is insulated and spaced rearwardly from the opener body.

This technology is a method and apparatus for the semi-continuous measurement of the concentration of constituents of airborne particles which couples a laminar flow, water condensation particle collector to a microfluidic device for assay of particle chemical composition by electrophoresis. The technology has been used for the assay of sulfates, nitrates, chlorides, and organic acids contained in fine and submicrometer atmospheric particles. For these compounds the apparatus and method described is capable of one-minute time resolution at concentrations at the level of micrograms of analyte species per cubic meter of air. Extension to other analytes is possible.

Biosensor apparatus and associated method for detecting a target material using a vibrating resonator having a surface that operably interacts with the target material. A detector is in electrical communication with a sensor, the sensor comprising a first paddle assembly connected to a second paddle assembly, the first paddle assembly having at least one microbalance sensing resonator proximate a proximal end and at least one sensing electrical contact proximate a distal end in electrical communication with the sensing resonator. The at least one sensing resonator has a target coating for operably interacting with the target material, and the second paddle assembly has a microbalance reference resonator proximate the proximal end and at least one reference electrical contact proximate the distal end in electrical communication with the reference resonator.

A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.

A test strip ejector system for receiving and ejecting a fluid testing medical device test strip includes a mechanism assembly supported by the device whereby user actuation of the mechanism assembly induces displacement of the test strip in at least a test strip ejection direction to eject the test strip. The mechanism assembly includes a power source and an electric motor such as a piezo-electric linear micro motor connected to the power source. The electric motor has an armature displaced when the electric motor is energized. A digital display/user interface is provided. Selection of an ejection function presented on the digital display/user interface initiates operation of the electric motor and displacement of the armature thereby displacing the test strip in the ejection direction. An operating system including a microprocessor is connected to the display/user interface. The microprocessor controls direction of operation and operating speed of the motor.

A method of forming a 3-phenylimino-3H-phenothiazine or a 3-phenylimino-3H-phenoxazine mediator includes providing a first reactant including phenothiazine or phenoxazine, providing a first solvent, providing a second reactant and providing a second solvent. The first reactant, first solvent, second reactant and second solvent are combined to form a reactants solution. Sodium persulfate is added to the reactants solution to couple the first and second reactants resulting in a reaction solution including the 3-phenylimino-3H-phenothiazine or the 3-phenylimino-3H-phenoxazine mediator.

The aerator rollers project below the frame for rolling engagement with the ground and are located in tandem relation relative to the direction of travel. Each aerator roller has teeth that penetrate the ground surface. The formations on each aerator roller are spaced apart from one another circumferentially around and longitudinally along the roller. Formations on one aerator roller are offset from those on the other roller permitting overlap of same. The aerator rollers are interconnected in drive and driven relation to rotate in a predetermined ratio. A hopper mounted on the frame dispenses seeds, fertilizer or the like. A rear depth control roller assembly using one or more rollers or wheels is pivotally mounted on the frame and can be brought into rolling engagement with the ground to control the depth of penetration of the formations of the aerator rollers into the ground.

A tongue pulled spreader and grader system having a pair of spaced apart sidewalls and cross beams to define a frame portion, a plurality of moveable or fixed blades extending between the sidewalls, each blade positionable along the length of each sidewall and fixed in position at a predetermined angle; a tongue for mounting the frame to the rear of a vehicle; a pair of wheels positioned on an axle on either side of the sidewalls; means for manually or hydraulically extending the wheels to a down position to make contact with a surface in order to transport the spreader and grader and for retracting the wheels to an up position so that the spreader and grader can undertake the grading process. The spreader and grader can attach to and be operated by ATVs, SUVs, light trucks, lawn tractors, sub compact tractors, side by side ATVs and fork trucks.

A ripping mechanism for a vehicle has a support frame. A ripping member has an engagement head that is configured for plowing a groove in the ground. The ripping member is preferably positionable in a selected working position and working orientation by adjustment of the support frame. The ripping member is preferably movable relative to the support frame to cause reciprocating movement of the engagement head at least partially longitudinally. A tilt adjustment cylinder is preferably operable to orient the ripping member in the selected orientation. A vibrator mechanism is preferably operatively connected to the ripping member and activatable to cause reciprocating movement of the engagement head at least partially longitudinally.

In one embodiment, a turf aerator includes a frame having wheels, a variable displacement pump, an engine for driving at least one of the wheels and driving the pump, a tine assembly supported by the frame and being movable between lowered and raised configurations, and a swash-plate-adjustment linkage extending from the tine assembly to the pump. The tine assembly includes: a base; a hydraulic motor in hydraulic communication with the pump; rotatable cranks powered by the hydraulic motor; a downwardly-extending arm rotatably coupled to each crank; a tine extending downwardly from each downwardly-extending arm; springs operatively anchored to the base; and a guide arm extending between each downwardly-extending arm and a respective spring. The swash-plate-adjustment linkage automatically adjusts the pump with movement of the tine assembly relative to the frame to provide output to the hydraulic motor substantially only when the tine assembly is at the lowered configuration.

The disclosure describes, in one aspect, a system and method for controlling a rotation angle of a blade of a motor grader having a front frame operatively coupled to a rear frame at a point defining an articulation angle between the front and rear frames. The control system includes at least one sensor operatively associated with the blade, at least one sensor operatively associated with a wheel, at least one sensor operatively associated with at least one of the front frame or the rear frame, and a controller operatively coupled to the at least one sensors. The controller is adapted to determine a current position of the blade, determine a wheel steering angle, determine an articulation angle, and control the rotation angle of the blade based in part on the wheel steering angle and the articulation angle.

A cultivator may include at least one rechargeable battery for an electrical power tool as a power source. The at least one rechargeable battery may include a plurality of rechargeable batteries. Further, the plurality of rechargeable batteries may be switched in sequence, so as to be used as the power source.

An agricultural machine (101; 201; 301) comprising two mainly parallel, in the direction of travel, cross-running disc implement rows (102a, 102c; 202a, 202b; 304a, 304b), wherein the orientation of the disc implements (102b, 102d; 203a, 203b; 302a, 302b) contained in the mentioned disc implement rows is arranged so that the fore row (102a; 202a; 304a) has disc implements that are mounted on a frame beam (110; 211; 303) and that are angled outwards and backwards towards the sides of the machine and in a dividing line mainly parallel to the direction of travel of the machine form a first point of change (208a, 304c), and the rear row (102c, 202b; 304b) has disc implements (102d; 203b; 302b) that are mounted on a frame beam (110; 211; 303) and that are angled inwards and backwards from the sides of the machine and in the dividing line form a second point of change (208b, 304a), wherein the fore row is adapted to throw soil from the first point of change outwards towards the sides of the machine and the other row is adapted to throw soil from the sides of the machine inwards towards the second point of change. The dividing line with the first point of change (208a, 304c), and with the second point of change (208b, 304) is arranged at a predetermined distance from the centre line of the machine (101; 201; 301) across the direction of travel.

A brake control system and method for motor vehicles is provided with an electronic control unit, by which, when the motor vehicle is stationary, a parking brake function can be activated manually or automatically. Its deactivation occurs upon reaching a predefined release condition. In the presence of a release condition the brake pressure, which was built up for the parking brake function, is released in a time offset manner at least in relation to the axles of the vehicle by way of the control unit.

A hitch on a vehicle is raised and lowered by a hydraulic actuator controlled by an electrically operated valve. A control system receives a command that indicates a designated velocity and uses the command to operate the valve. Based on a reference external force exerted on the hitch, the control system is configured with relationships for converting a plurality of command values to corresponding electric current levels for operating the valve. The control system compensates for effects due to differences between the actual force acting on the hitch and the reference external force. Velocity feedback adjusts the electric current level applied to the valve. The passive load force control provides a predictor of the hitch load force to eliminate overshoot/undershoot of hitch motion. During hitch motion, the velocity feedback also compensates for effects due to load and hitch geometry changes that occur.

An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied.

A semiconductor light-emitting device includes a lamination of semiconductor layers including a first layer of a first conductivity type, an active layer, and a second layer of a second conductivity type; a transparent conductive film formed on a principal surface of the lamination and having an opening; a pad electrode formed on part the opening; and a wiring electrode connected with the pad electrode, formed on another part of the opening while partially overlapping the transparent conductive film; wherein contact resistance between the transparent conductive film and the lamination is larger than contact resistance between the wiring electrode and the lamination. Field concentration at the wiring electrode upon application of high voltage is mitigated by the overlapping transparent conductive film.

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface containing an inorganic filler in an amount within a range of 70% by weight to 95% by weight based on the whole of the film for flip chip type semiconductor back surface.

An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.

The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.

According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.

A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer. The substrate intermediate layer and the device intermediate layer comprise a distribution in their compositions along a thickness coordinate.

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.