Embodiments provide a multi-phase voltage controlled oscillator (VCO) that produces a plurality of output signals having a common frequency and different phases. In one embodiment, the VCO may include a passive conductive structure having a first ring and a plurality of taps spaced around the first ring. The VCO may further include a capacitive load coupled to the passive conductive structure, one or more feedback structures coupled between a pair of opposing taps of the plurality of taps, and one or more current injection devices coupled between a pair of adjacent taps of the plurality of taps.

The present invention discloses an Oven Controlled Crystal Oscillator and a manufacturing method thereof. The Oven Controlled Crystal Oscillator comprises a thermostatic bath, a heating device, a PCB and a signal generating element, where the signal generating element is used for generating a signal of a certain frequency, the heating device, the PCB and the signal generating element are mounted in the thermostatic bath, the signal generating element is mounted in a groove formed on one side of the PCB, while the heating device is mounted against the other side of the PCB that is opposite to the groove. The signal generating element may be a passive crystal resonator or an active crystal oscillator. The Oven Controlled Crystal Oscillator according to the invention is advantageous for a small volume and a high temperature control precision.

An oscillator outputs a control signal to suppress an influence caused by temperature characteristic of f1 based on a differential signal corresponding to difference between an oscillation output f1 of a first oscillator circuit and an oscillation output f2 of a second oscillator circuit treated as a temperature detection value. A switching unit switches between a first state and a second state. The first state is a state where a first connecting end and a second connecting end are connected to a storage unit for access from an external computer to the storage unit. The second state is a state where the first connecting end and the second connecting end are connected to a first signal path and a second signal path such that the respective f1 and f2 are retrieved from the first connecting end and the second connecting end to an external frequency measuring unit.

An atomic oscillator includes: a gas cell which includes two window portions having a light transmissive property and in which metal atoms are sealed; a light emitting portion that emits excitation light to excite the metal atoms in the gas cell; a light detecting portion that detects the excitation light transmitted through the gas cell; a heater that generates heat; and a connection member that thermally connects the heater and each window portion of the gas cell to each other.

An oscillator configured to oscillate an electromagnetic wave, including: a negative resistance device; a microstrip resonator configured to determine an oscillation frequency of an electromagnetic wave excited by the negative resistance device; a resistance device and a capacitance device, which form a low-impedance circuit configured to suppress parasitic oscillation; and a strip conductor configured to connect the capacitance device of the low-impedance circuit and the microstrip resonator to each other, in which an inductance L of the strip conductor and a capacitance C of the microstrip resonator produce a resonance frequency of ½π√LC, and ¼ of an equivalent wavelength of the resonance frequency is larger than a distance between the negative resistance device and the resistance device of the low-impedance circuit via the strip conductor, is provided.

An integrated structure of compound semiconductor devices is disclosed. The integrated structure comprises from bottom to top a substrate, a first epitaxial layer, an etching-stop layer, a second epitaxial layer, a sub-collector layer, a collector layer, a base layer, and an emitter layer, in which the first epitaxial layer is a p-type doped layer, the second epitaxial layer is an n-type graded doping layer with a gradually increased or decreased doping concentration, and the sub-collector layer is an n-type doped layer. The integrated structure can be used to form an HBT, a varactor, or an MESFET.

A method, an apparatus, and a computer program product are provided. The apparatus tunes a frequency provided by a VCO. The apparatus determines a relative capacitance change associated with a first frequency and a desired frequency from a look-up table. The apparatus adjusts a capacitor circuit in the VCO based on the determined relative capacitance change determined from the look-up table in order to tune from the first frequency to the desired frequency. The apparatus determines that the frequency provided by the VCO is a second frequency different than the desired frequency after adjusting the capacitor circuit. The apparatus performs an iterative search to further adjust the capacitor circuit when a difference between the second frequency and the desired frequency is greater than a threshold.

A crystal-less clock generator (CLCG) and an operation method thereof are provided. The CLCG includes a first oscillation circuit, a second oscillation circuit, and a control circuit. The first oscillation circuit is controlled by a control signal for generating an output clock signal of the CLCG. The second oscillation circuit generates a reference clock signal. The control circuit is coupled to the first oscillation circuit for receiving the output clock signal and coupled to the second oscillation circuit for receiving the reference clock signal. The control circuit is used to generate the control signal for the first oscillation circuit according to the relationship between the output clock signal and the reference clock signal.

A system is disclosed for a voltage controlled oscillator (“VCO”) having a large frequency range and a low gain. Passive or active circuitry is introduced between at least one VCO cell in the voltage controlled oscillator and the voltage source for the VCO cell which reduces a gain value for the VCO to maintain stability of the system.

An oscillator includes: a piezoelectric material to vibrate; a first inverting amplifier; a second inverting amplifier; a first output electrode to apply an output signal of the first inverting amplifier to the piezoelectric material; a second output electrode to apply an output signal of the second inverting amplifier to the piezoelectric material; a first input electrode to receive a voltage signal generated by the piezoelectric material and output the voltage signal to the first inverting amplifier; and a second input electrode to receive the voltage signal and output the voltage signal to the second inverting amplifier, wherein the first and second output electrodes are coupled to the piezoelectric material so that faces of the piezoelectric material move in opposite directions, and the first and second input electrodes are coupled to the piezoelectric material so that the voltage signals are input to the first and second input electrodes.

An injection locking oscillator (ILO) comprising a tank circuit having a digitally controlled capacitor bank, a cross-coupled differential transistor pair coupled to the tank circuit, at least one signal injection node, and at least one output node configured to provide an injection locked output signal; a digitally controlled injection-ratio circuit having an injection output coupled to the at least one signal injection node, configured to accept an input signal and to generate an adjustable injection signal applied to the at least one injection node; and, an ILO controller connected to the capacitor bank and the injection-ratio circuit configured to apply a control signal to the capacitor bank to adjust a resonant frequency of the tank circuit and to apply a control signal to the injection-ratio circuit to adjust a signal injection ratio.

Embodiments of the present invention provide a temperature compensation method and a crystal oscillator, where the crystal oscillator includes a crystal oscillation circuit unit, a temperature sensor unit, an oscillation controlling unit, a relative temperature calculating unit, and a temperature compensating unit. The temperature sensor unit measures a measured temperature of the crystal oscillation circuit unit; the relative temperature calculating unit obtains a temperature difference between the measured temperature and a reference temperature; the temperature compensating unit obtains a temperature compensation value corresponding to the temperature difference from a temperature-frequency curve; and the oscillation controlling unit generates a frequency control signal, according to a frequency tracked by a communications AFC device and the temperature compensation value, thereby controlling a frequency of the crystal oscillation circuit unit to work on the tracked frequency.

Various techniques for generating an output clock based on a reference clock. This disclosure relates to generating an output clock signal based on a reference clock signal. In one embodiment, a method includes generating, using information received from a control circuit, an output clock signal using both a first number of edges or an input clock signal and a second, different number of edges of the input clock signal. In this embodiment, the control circuit runs at a frequency that is less than a frequency of the input clock signal. The received information may indicate, for a pulse of the output clock signal, whether the pulse should be generated using the first number of edges or the second number of edges. In some cases, the second number of edges may be the first number of edges plus one. The first and second number of edges may be programmable quantities.

A current output control device is provided that includes: a current cell array section including plural current cell circuits that are each connected in parallel between a first terminal (power source) and a second terminal (ground) that connect between the first terminal and the second terminal in by operation ON so as to increase control current flowing between the first terminal and the second terminal; and a code conversion section (decoder) that generates signals (row codes, column codes) to ON/OFF control current cells so as to change the number of current cells that connect the first terminal and the second terminal according to change in an externally input code and that inputs the generated signals to the current cell array section.

This invention discloses a crystal oscillator, in which by appropriately designing the gain of an amplifier to achieve high trans-conductance and low power consumption. This crystal oscillator includes a first pad, coupled to a first node of a crystal, for receiving a crystal oscillating signal outputted from the crystal; an amplifier, coupled to the first pad, for amplifying the crystal oscillating signal to generate an amplifying signal; an inverter, coupled to the amplifier, for inverting the amplifying signal; and a second pad, coupled to a second node of the crystal, for outputting an oscillating signal to the crystal.

A ring oscillator circuit causing a pulse signal to circulate around a circle to which an even number of inverting circuits are connected in a ring, wherein one of the inverting circuits is a first starting inverting circuit, which drives a first pulse signal according to a control signal, another of the inverting circuits is a second starting inverting circuit, which drives a second pulse signal based on a leading edge of the first pulse signal, still another is a third starting inverting circuit, which drives a third pulse signal based on the leading edge of the first pulse signal after the second pulse signal is driven, and the first to third starting inverting circuits are arranged within the circle of the inverting circuits in order of the third, second, and first pulse signals in traveling directions of the pulse signals.

An integrated oscillator circuit comprises an oscillator configured to be switched between a first frequency and a second frequency. A switching circuit receives an input representing a target frequency and switches the oscillator between the first and second frequencies at intervals determined by the input, so as to cause the average output frequency of the oscillator to approximate the target frequency.

The switching element is provided in a state of being electromagnetically coupled to the cavity resonator of the high frequency oscillator; the bias voltage applying terminal is connected to one electrode of the switching element; another electrode of the switching element is electrically connected to the cavity resonator (the anode shell in FIG. 1); the metal plate having a size enough for reflecting an electric wave to be transmitted before and after the switching element in a high-frequency manner is provided at any one end of the switching element; and by applying a bias voltage to the switching element and varying that, a reactance of the switching element is changed and a resonance frequency of the cavity resonator is varied. By this method, an oscillation frequency can be varied greatly relative to a small change in a bias voltage.

An enhanced negative resistance voltage controlled oscillator (VCO) circuit is provided, in which a parallel connection of a capacitor and a resistor configured to provide frequency-dependent transconductance is present across source nodes of a first pair of field effect transistors in which gate nodes and drain nodes are cross-coupled. The source nodes of the first pair of field effect transistors are electrically shorted to drain nodes of a second pair of field effect transistors of which the gate nodes are electrically shorted to the gate nodes of the first pair of field effect transistors. The parallel connection of the capacitor and the resistor includes a parallel connection of a capacitor and a resistor such that the net transconductance of the first pair of field effect transistors is less at low frequencies where thermal noise and flicker noise are dominant part of the phase noise than at the operational frequency range.

A vibration element includes a piezoelectric substrate including a vibrating section and a thick section having a thickness larger than that of the vibrating section. The thick section includes a first thick section provided along a first outer edge of the vibrating section, a second thick section provided along a second outer edge, and a third thick section provided along another first outer edge. An inclined outer edge section that intersects with each of an X axis and a Z' axis is provided in a tip section of the piezoelectric substrate.

Arrays of resonator sensors include an active wafer array comprising a plurality of active wafers, a first end cap array coupled to a first side of the active wafer array, and a second end cap array coupled to a second side of the active wafer array. Thickness shear mode resonator sensors may include an active wafer coupled to a first end cap and a second end cap. Methods of forming a plurality of resonator sensors include forming a plurality of active wafer locations and separating the active wafer locations to form a plurality of discrete resonator sensors. Thickness shear mode resonator sensors may be produced by such methods.

A crystal controlled oscillator includes a crystal package and an IC chip board that includes an IC chip integrating an oscillator circuit. The crystal package includes a first container, a crystal resonator, a lid body, and an external terminal at an outer bottom surface of the first bottom wall layer of the first container. The IC chip integrates an oscillator circuit disposed at an outer bottom surface of the first bottom wall layer of the crystal package. The oscillator circuit connects to the lower side excitation electrode of the crystal resonator from the external terminal to an input side with high impedance. The oscillator circuit connects to the upper side excitation electrode to an output side with low impedance. The upper side excitation electrode is a shielding electrode of the crystal resonator.

An apparatus is disclosed that includes a first cross-coupled transistor pair, a second cross-coupled transistor pair, at least one capacitance unit, and an inductive unit. The first cross-coupled transistor pair and second cross-coupled transistor pair are coupled to a pair of first output nodes and a pair of second output nodes, respectively. The at least one capacitance unit is coupled to at least one of the pair of first output nodes and the pair of second output nodes. The inductive unit is coupled to the first cross-coupled transistor pair at the first output nodes and coupled to the second cross-coupled transistor pair at the second output nodes. The inductive unit generates mutual magnetic coupling between one of the first output nodes and one of the second output nodes and between the other of the first output nodes and the other of the second output nodes.

A solenoid actuator comprising an armature member that engages a spool including a spool cap on an end of the spool that is axially movable relative to the spool. A bore in the spool allows fluid to flow from a control port to the spool cap, such that pressure is established in the spool cap. The pressure established in the spool cap acts on the spool with a force directly proportional to the control pressure and the fluid-contacting area inside the spool cap.

A most recent electrostatic capacitance value for a backup capacitor is measured periodically. Each time the most recent electrostatic capacitance value is measured, a charging voltage (a required charging voltage) that is required in order to cause a return operation of a valve from the setting opening at that time to an emergency opening/closing position (for example, the fully closed position) is calculated based on the electrostatic capacitance value that has been measured, and the terminal voltage of the backup capacitor is adjusted so as to become equal to the calculated required charging voltage.

A flush adaptor for use with a valve fitment assembly for dispensing liquids from a container; wherein the flush adaptor comprises an outer ring-collar; a flange with an edge molded to the bottom of the outer ring-collar; an interior ring-collar adjacent to the outer ring-collar; a ridge molded in the interior ring-collar; a seat molded onto the interior ring-collar and a pin molded into the interior ring-collar which keeps the valve in an open position; and a hollow tube molded into the adaptor to allow the flow of liquid through the adaptor and into the fitment assembly; whereby the flush adaptor allows for cleaning of the assembly and any tubes connected thereto.

Power-efficient actuator apparatus and methods. In one exemplary embodiment, the actuator assembly utilizes a shape memory alloy (SMA) filament driven by an electronic power source to induce movement in the underlying assembly to actuate a load (e.g., water valve). In addition, a circuit board is included which allows the actuator assembly to be readily incorporated or retrofit into a wide range of systems such that the signal characteristics of the supply line can, among other applications, be conditioned in order to protect the SMA filament. Furthermore, the circuit board can also readily be adapted for use with “green” power sources such as photovoltaic systems and the like. Methods for manufacturing and utilizing the aforementioned actuator assembly are also disclosed.

A direct acting solenoid actuator includes an armature and associated push pin that are suspended from certain fixed solenoid components, such as a pole piece and/or flux sleeve, by a fully floating cage of rolling elements. The fixed solenoid component may comprise a pole piece and/or a flux sleeve. The pole piece may include stops to limit movement of the cage of rolling elements in the axial direction.

A butterfly valve including a valve body having a passage, a valve shaft assembly, a valve plate, and a tube that is friction fit inside the passage is provided. The valve shaft assembly includes a first shaft portion and a second shaft portion. The first and second shaft portions are in opposing spaced relation with the valve plate disposed therebetween. The valve plate has a flange such that when the butterfly valve is in the closed position a seal is formed with the tube, which is disposed within the fluid flow passage. The valve plate has lip extending from a portion of the valve plate that is radially outward from the circumference of the tube. The lip acts to reduce flow induced torque experienced while the valve plate is actuated from the closed to the open position.

An actuator includes a first piston and a second piston. The first piston has a piston ring that separates a first chamber from a second chamber of the actuator. The first piston has an interior chamber that communicates with the first chamber. The second piston is disposed within the interior chamber of the first piston so as to be movable with respect thereto. The second piston has a surface that interfaces with the second chamber.

In a control device for a technical processing plant, a pneumatically driven actuator having an actuator stem is provided together with a valve operated by the actuator, the valve having a valve stem. A valve element is attached to the valve stem. A stem connector connects the two stems to each other for a forced transmission of axial actuating movements and for modifying an axial distance between adjacent ends of the valve stem and the actuator stem to adjust a total axial length of the two stems. The stem connector comprises two half-shells connected to each other, and two positioning devices are provided for a friction-locking coupling of the half-shells to the respective ends. At least one of the positioning devices is designed to modify an axial attachment position of the half-shells along one of the stems.

The invention relates to a valve actuator (2), comprising a magnetic core (6) with an interspace (8) and at least one bifurcating branch (7), at least one variable magnetic field generating device (16), at least one permanent magnetic field generating device (13) and at least one movable magnetic component (12), wherein the bifurcating branch (7) defines a first region (4) and a second region (5) of said magnetic core (6). Said movable magnetic component (12) is movably arranged within said interspace (8) of said magnetic core (6) in such a way that a first gap (19) is formed between a first surface (23) of said movable magnetic component (12) and a first surface (22) of said interspace (8) of said magnetic core (6), a second gap (20) is formed between a second surface (24) of said movable magnetic component (12) and a second surface (25) of said interspace (8) of said magnetic core (6), and a third gap (21) is formed between a third surface (27) of said movable magnetic component (12) and a third surface (26) of said bifurcating branch (7) of said magnetic core (6). At least one of said variable magnetic field generating devices (48, 49) is associated with said first region (4) of said magnetic core (6) and at least one of said permanent magnetic field generating devices (13) is associated with said second region (5) of said magnetic core (6). Said valve actuator (2) is designed and arranged in a way that a magnetic flux, generated by at least one at least one of said variable magnetic field generating devices (16) is able to exert a force on said at least one movable magnetic component (12) and is able to cancel the magnetic flux (48, 49), generated by at least one of said permanent magnetic field generating devices (13). At least one magnetic flux limiting means (7, 12) is provided, whose magnetic flux limit can be reached or exceeded.

A solenoid valve, the magnet armature of which is designed to be movable relative to a first valve-closing element, for which purpose the first valve-closing element is accommodated telescopically in a coupling element attached to the magnet armature, wherein the coupling element is guided along the inner wall of a guide sleeve inserted in the valve housing in order to align the magnet armature precisely with the first valve-closing element in the direction of a second valve-closing element which is likewise accommodated in the guide sleeve.

An apparatus and method are provided, for alternatively producing either small or bulk packs of napkins from a stack of folded napkins produced by one folding machine, through use of a pack dispatching arrangement having an inlet, a small pack transfer station and a bulk pack transfer station, and configured for operation in a small pack mode for dispatching a stream of spaced apart small packs of folded sheets separated from the stack of folded sheets, and received at an inlet of the pack dispatching arrangement, to the small pack transfer station, and alternatively operable in a bulk pack mode for dispatching a stream of spaced apart bulk packs of folded sheets separated from the stack of folded sheets, and received at an inlet of the pack dispatching arrangement, to the bulk pack transfer station.

This invention provides a technique of preventing a collision between an original document and a printing material on a conveyance path when an image forming apparatus executes both additional printing on the original document and printing on the printing material. In a case where both additional printing on an original document and printing on a printing material are executed, the image forming apparatus according to one aspect of the invention conveys a read original document to a transfer unit through a conveyance path commonly used for an original document and sheet, and prints an image to be added on the original document. After the original document is conveyed to the transfer unit through the conveyance path, the image forming apparatus feeds a sheet from a sheet feeding unit to the conveyance path, and performs copying on the sheet in the transfer unit.

A printing control apparatus according to one aspect of this invention controls to print images on sheets based on image data of a plurality of pages, generate a bookbinding product by executing folding processing for the image-printed sheets, and output the bookbinding product. The printing control apparatus further accepts the position of an insertion sheet to be inserted into the sheets for which the folding processing is executed, and controls to output a plurality of bookbinding products by using, as a reference, the accepted position of the insertion sheet.

The present invention is directed to providing a mechanism for allowing a user to easily take out print products discharged onto a plurality of sheet discharge trays in the discharge order. A control method for controlling a sheet processing apparatus for performing control to discharge sheets onto a plurality of sheet discharge trays includes storing, in a storage unit, the discharge order in which sheets have been discharged onto equal to or more than two sheet discharge trays by executing a job, and performing, upon reception of a take-out instruction for taking out in the discharge order the sheets discharged by executing the job, processing for allowing a user to take out the sheets discharged onto the equal to or more than two sheet discharge trays, in the discharge order stored in the storage unit.

An image recording apparatus includes: a recording unit for recording an image on a recording medium; a tray for supporting the recording medium recorded by the recording unit; a conveyor mechanism for conveying the recorded medium to the tray; and an alignment mechanism for aligning a plurality of recording media stacked on the tray, by application of an external force. In a period from a start to an end of recording based on one recording job, the alignment mechanism aligns the plurality of recording media stacked on the tray in a period in which image recording is not performed, and the alignment mechanism does not align the plurality of recording media stacked on the tray in a period in which image recording is being performed.

In a provided apparatus, an upper roller to be engaged with a sheet upper face and a lower roller to be engaged with a sheet lower face are arranged at a sheet discharging port in a manner capable of being pressure-contacted and being separated, the upper roller is formed with a large-diameter soft roll face and a small-diameter hard roll face, and a pressurization force of roller lifting-lowering means with which the upper roller is pressure-contacted to and is separated from the lower roller is switched to be high or low.

In a sheet storing apparatus of the present invention, a tailing end supporting member which temporarily supports a tailing end of a dropping sheet bundle is arranged between a discharging port of a processing tray to discharge the sheet bundle and the upmost sheet on a stack tray as being movable between an operating position above a sheet placement face and a waiting position outside the stack tray.

A sheet processing apparatus and a method of controlling the same align sheets stacked on a stacking unit, by causing a first alignment member and a second alignment member to come into contact with edges of a sheet stacked on the stacking unit in a sheet width direction. In a case that a second sheet that is different from a first sheet stacked on the stacking unit is to be stacked on the first sheet and aligned using the first alignment member and the second alignment member, control is performed to discharge a partition sheet onto the first sheet stacked on the stacking unit.

To provide a sheet storage apparatus for enabling sheets that are carried out of an image formation apparatus or the like on the upstream side to be loaded and stored in a predetermined position with a correct posture neatly at high speed, a sheet discharge roller and a reverse roller spaced a distance are disposed in a sheet discharge outlet and a tray, a kick member is provided to be swingable in a vertical direction passing a sheet discharge path of a sheet discharged from the sheet discharge outlet, and a posture of the kick member is controlled by shift means. The shift means controls the kick member among a waiting posture retracted upward from the sheet discharge path, an engagement posture for imposing a load on the sheet to engage, and an actuation posture dropping onto the tray together with the sheet.

The present invention relates generally to a semiconductor device and, more specifically, to optimizing the creep-age distance of the power semiconductor device and a preparation method thereof. The power semiconductor device includes a chip mounting unit with a die paddle and a plurality of leads arranged side by side located close to one side edge of the die paddle in a non-equidistant manner, a semiconductor chip attached on the die paddle, and a plastic packaging body covering the die paddle, the semiconductor chip, where the plastic packing body includes a plastic extension portion covering at least a part of a lead shoulder of a lead to obtain better electrical safety distance between the terminals of the semiconductor device, thus voltage creep-age distance of the device is increased.

Some implementations provide a structure that includes a first package substrate, a first component, a second package substrate, a second component, and a third component. The first package substrate has a first area. The first component has a first height and is positioned on the first area. The second package substrate is coupled to the first package substrate. The second package substrate has second and third areas. The second area of the second package substrate vertically overlaps with the first area of the first package substrate The third area of the second package substrate is non-overlapping with the first area of the first package substrate. The second component has a second height and is positioned on the second area. The third component is positioned on the third area. The third component has a third height that is greater than each of the first and second heights.

The stack package includes a first semiconductor package and a second semiconductor package. The first semiconductor package includes a first substrate having a first modulus and at least one semiconductor chip mounted on the first substrate. The second semiconductor package stacked on the first semiconductor package and includes a second substrate having a second modulus and at least one semiconductor chip mounted on the second substrate. The second modulus is less than the first modulus. Even in the event that the first semiconductor package is under severe warpage due to a temperature change, the flexible second substrate, which includes e.g., polyimide or poly ethylene terephthalate, of the second semiconductor package may be less sensitive to the temperature change, thereby improving reliability of the stack package.

An embodiment is an integrated circuit structure including a first die attached to a second die by a first connector. The first connector includes a solder joint portion between a first nickel-containing layer and a second nickel-containing layer, a first copper-containing layer between the first nickel-containing layer and the solder joint portion, and a second copper-containing layer between the second nickel-containing layer and the solder joint portion.

Systems, manufactures, methods and/or techniques for a merged fiducial for chip packages are described. According to some embodiments, an integrated circuit package may include a package substrate having a first side and a second side, a plurality of conductive traces coupled to the first side and a plurality of balls disposed on the second side. The balls may be adapted to electrically connect the laminate package to a circuit board. The integrated circuit package may include a plurality of ball pads disposed on the second side, the ball pads being adapted to electrically connect the plurality of balls to the plurality of conductive traces. One or more of the ball pads may be uniquely shaped when compared to the rest of the plurality of ball pads, optionally, to serve as a fiducial to designate an A1 pin or ball of the laminate package.

A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).

In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.