A simple and robust tool for spatio-temporal overlap of THz and XUV pulses in in-vacuum pump–probe experiments is presented. The technique exploits ultrafast changes of the optical properties in semiconductors (i.e. silicon) driven by ultrashort XUV pulses that are probed by THz pulses. This work demonstrates that this tool can be used for a large range of XUV fluences that are significantly lower than when probing by visible and near-infrared pulses. This tool is mainly targeted at emerging X-ray free-electron laser facilities, but can be utilized also at table-top high-harmonics sources.

Structures of the immunodominant protein P46 from M. hyopneumoniae has been determined by X-ray crystallography and it is shown that P46 can bind a diversity of oligosaccharides, particularly xylose, which exhibits a very high affinity for this protein. Structures of a monoclonal antibody, both alone and in complex with P46, that was raised against M. hyopnemoniae cells and specifically recognizes P46 are also reported.

Afamin, which is a human blood plasma glycoprotein, a putative multifunctional transporter of hydrophobic molecules and a marker for metabolic syndrome, poses multiple challenges for crystallographic structure determination, both practically and in analysis of the models. Several hundred crystals were analysed, and an unusual variability in cell volume and difficulty in solving the structure despite an ∼34% sequence identity with nonglycosylated human serum albumin indicated that the molecule exhibits variable and context-sensitive packing, despite the simplified glycosylation in insect cell-expressed recombinant afamin. Controlled dehydration of the crystals was able to stabilize the orthorhombic crystal form, reducing the number of molecules in the asymmetric unit from the monoclinic form and changing the conformational state of the protein. An iterative strategy using fully automatic experiments available on MASSIF-1 was used to quickly determine the optimal protocol to achieve the phase transition, which should be readily applicable to many types of sample. The study also highlights the drawback of using a single crystallographic structure model for computational modelling purposes given that the conformational state of the binding sites and the electron density in the binding site, which is likely to result from PEGs, greatly varies between models. This also holds for the analysis of nonspecific low-affinity ligands, where often a variety of fragments with similar uncertainty can be modelled, inviting interpretative bias. As a promiscuous transporter, afamin also seems to bind gadoteridol, a magnetic resonance imaging contrast compound, in at least two sites. One pair of gadoteridol molecules is located near the human albumin Sudlow site, and a second gadoteridol molecule is located at an intermolecular site in proximity to domain IA. The data from the co-crystals support modern metrics of data quality in the context of the information that can be gleaned from data sets that would be abandoned on classical measures.

The residual strain distribution has been measured as a function of depth in both top coat and bond coat in as-received and heat-treated air plasma sprayed thermal barrier coating samples. High-energy synchrotron X-ray beams were used in transmission to produce full Debye–Scherrer rings whose non-circular aspect ratio gave the in-plane and out-of-plane strains far more efficiently than the sin2ψ method. The residual strain in the bond coat is found to be tensile and the strain in the β phase of the as-received sample was measured. The residual strains observed in the top coat were generally compressive (increasing towards the interface), with two kinds of nonlinear trend. These was a `jump' feature near the interface, and in some cases there was another `jump' feature near the surface. It is shown how these trend differences can be correlated to cracks in the coating.

Mycoplasma hyopneumoniae is a prokaryotic pathogen that colonizes the respiratory ciliated epithelial cells in swine. Infected animals suffer respiratory lesions, causing major economic losses in the porcine industry. Characterization of the immunodominant membrane-associated proteins from M. hyopneumoniae may be instrumental in the development of new therapeutic approaches. Here, the crystal structure of P46, one of the main surface-antigen proteins, from M. hyopneumoniae is presented and shows N- and C-terminal α/β domains connected by a hinge. The structures solved in this work include a ligand-free open form of P46 (3.1 Å resolution) and two ligand-bound structures of P46 with maltose (2.5 Å resolution) and xylose (3.5 Å resolution) in open and closed conformations, respectively. The ligand-binding site is buried in the cleft between the domains at the hinge region. The two domains of P46 can rotate with respect to each other, giving open or closed alternative conformations. In agreement with this structural information, sequence analyses show similarities to substrate-binding members of the ABC transporter superfamily, with P46 facing the extracellular side as a functional subunit. In the structure with xylose, P46 was also bound to a high-affinity (Kd = 29 nM) Fab fragment from a monoclonal antibody, allowing the characterization of a structural epitope in P46 that exclusively involves residues from the C-terminal domain. The Fab structure in the complex with P46 shows only small conformational rearrangements in the six complementarity-determining regions (CDRs) with respect to the unbound Fab (the structure of which is also determined in this work at 1.95 Å resolution). The structural information that is now available should contribute to a better understanding of sugar nutrient intake by M. hyopneumoniae. This information will also allow the design of protocols and strategies for the generation of new vaccines against this important swine pathogen.

Along with participation in the International Thermonuclear Experimental Reactor (ITER) project – a large, international burning plasma experiment – the U.S. Department of Energy (DOE) should start a national program of accompanying research and technology to build a compact pilot plant that produces electricity from fusion at the lowest possible capital cost, says a new report from the National Academies of Sciences, Engineering, and Medicine.

In light of the present situation in the U.S., we believe that it is essential to explore a wide range of options for treating the increasing numbers of very ill patients with COVID-19 respiratory illness.

Lithium production has increased dramatically during the past decade. A new study has found that exposure of rainbow trout to lithium results in fast accumulation in plasma and the brain, along with decreased concentrations of ions such as sodium.

The cat-carried parasite Toxoplasma gondi has been associated with a variety of illnesses, but you can take simple precautions.

What will you see when you compare the same show on a plasma screen TV and a LCD TV? That depends mostly on where you watch it.

If you are trying to decide which TV is better for your life style, just take a look at your viewing styles

For the average person, even a regular television set is something of a technological marvel that becomes almost unbelievable when considering today's latest and greatest advances, including the plasma TV

There's just something about spending a couple of hours at a theater, and many people are trying to recreate that feeling with home theaters.

If plasma TVs can be so thin, why have we spent decades with those bulky, oversized television sets taking up an entire corner of the room? The answer is in the technology.

Improve your skin texture, tone and clarity

Covid-19 pandemic: ICMR approves 28 more institutions for Plasma Therapy across country

Four NBA players have been confirmed as volunteer blood plasma donors as a means of testing an experimental therapy to treat COVID-19.

The post NBA Players Recovered From COVID-19 Are Donating Plasma to Clinical Trials Helping Sick Patients appeared first on Good News Network.

A method for preparing 13C labeled plasmalogens as represented by Formula B: The method involves producing a 13C labeled cyclic plasmalogen precursor of Formula A: and conversion of the precursor to a plasmalogen of Formula B.

A two step process for the destruction of a precursor material using a steam plasma in a three zone reactor wherein the precursor material is hydrolyzed as a first step in the high temperature zone of the reactor, followed by a second step of medium temperature oxidation of the reactant stream in the combustion zone of the reactor where combustion oxygen or air is injected and immediate quenching of the resulting gas stream to avoid the formation of unwanted by-products. A related apparatus includes a non transferred direct current steam plasma torch, an externally cooled three zone steam plasma reactor means for introducing the precursor material into the plasma plume of the plasma torch, means for introducing the combustion air or oxygen into the combustion zone, means for exiting the reactant mixture from the reactor and means for quenching the reactant mixture located at the exit end of the reactor.

The invention provides a method and apparatus for creating plasma particles and applying the plasma particles to a liquid. Liquid feedstock (e.g., water and/or hydrocarbons mixed with biomass) is pumped through a pipeline; the single-phase stream is then transformed into a biphasic liquid-and-gas stream inside a chamber. The transformation is achieved by transitioning the stream from a high pressure zone to a lower-pressure zone. The pressure drop may occur when the stream further passes through a device for atomizing liquid. Inside the chamber, an electric field is generated with an intensity level that exceeds the threshold of breakdown voltage of the biphasic medium leading to a generation of a plasma state. Furthermore, the invention provides an energy-efficient highly adaptable and versatile method and apparatus for sanitizing water using plasma particles to inactivate biological agents contaminating water.

A bus interconnect interfaces a host system to a radio frequency (RF) generator that is coupled to a plasma chamber. The bus interconnect includes a first set of host ports, which are used to provide a power component setting and a frequency component setting to the RF generator. The ports of the first set of host ports are used to receive distinct variables that change over time. The bus interconnect further includes a second set of generator ports used to send a power read back value and a frequency read back value to the host system. The bus interconnect includes a sampler circuit integrated with the host system. The sampler circuit is configured to sample signals at the ports of the first set at selected clock edges to capture operating state data of the plasma chamber and the RF generator.

An apparatus for use with a centrifugal cellular separation device that comprises a rotor rotatable about an axis of rotation is provided that comprises a fluid separation chamber having a first port, a second port spaced apart from the first port, and a third port located intermediate the first port and the second port. The fluid separation chamber has a cross sectional area generally transverse to a radius extending from the axis of rotation that varies between the first port and the second port. The fluid separation chamber is adapted to be mounted to the rotor so as to be rotatable therewith, with the first port located at a greater radial distance from the axis than the second port, and the third port located radially intermediate the first port and the second port.

An in-liquid plasma electrode according to the present invention is an in-liquid plasma electrode for generating plasma in a liquid and has an electrically conductive member having an electric discharge end surface in contact with the liquid, and an electrically insulating member covering an outer periphery of the conductive member at least except the electric discharge end surface. Preferably, d and x satisfy −2d≦x≦2d, where d is a length of a minor axis of the cross section when a conductive end portion of the electrically conductive member having the electric discharge end surface has an approximately circular cross section, or d is a length of a short side of the cross section when the conductive end portion has an approximately rectangular cross section, and x is a distance from a reference plane to a plane containing the electric discharge end surface when the reference plane is an end surface of the electrically insulating member that is approximately parallel with the electric discharge end surface. Owing to this construction, it is possible to provide an in-liquid plasma electrode which can simply generate plasma in a wide variety of liquids including a conductive liquid such as water and alcohol, and furthermore an in-liquid plasma generating apparatus having this electrode, and an in-liquid plasma generating method using this electrode.

A High Frequency light source has a central body of fused quartz, with a central void, filled with a fill in the void of material excitable by High Frequency energy to form a light emitting plasma. An inner sleeve of perforate metal shim extends along the length of the central body to provide a launching gap. The sleeve has a transverse end portion extending across the other, inner end of the central body. An outer cylinder of fused quartz with an internal bore such as to be a sliding fit with the inner sleeve, itself a sliding fit on the central body. An outer sleeve of perforate metal, enclosing the outer cylinder and having an end portion extending across the flush, void ends of the quartz body and cylinder and having a skirt extending past the flush over an aluminum carrier, clamped and holding the quartz elements against the carrier.

The present invention relates to an apparatus and method for driving a PDP (plasma display panel). An image signal processor of the apparatus performs gamma correction and error diffusion processes of input image signals. A quantization error compensator compensates quantization errors with respect to an automatic power control (APC) level of image data output from the image signal processor. An error diffuser sets part of the image data output from the quantization error compensator as display errors and diffuses the display errors to peripheral pixels. A memory control and address driver generates sub-field and address data corresponding to image data that have undergone error diffusion by the error diffuser, and applies the data to the PDP. An APC and sustain/scan pulse generator generates a sub-field arrangement structure according to the APC level, generates control signals based on the generated sub-field arrangement, and applies the control signals to the PDP.

A showerhead electrode is provided where backside inserts are positioned in backside recesses formed along the backside of the electrode. The backside inserts comprise a tool engaging portion. The tool engaging portion is formed such that the backside insert further comprises one or more lateral shielding portions between the tool engaging portion and the threaded outside diameter to prevent a tool engaged with the tool engaging portion of the backside insert from extending beyond the threaded outside diameter of the insert. Further, the tool engaging portion of the backside insert comprises a plurality of torque-receiving slots arranged about the axis of rotation of the backside insert. The torque-receiving slots are arranged to avoid on-axis rotation of the backside insert via opposing pairs of torque-receiving slots.

Maskless hybrid laser scribing and plasma etching wafer dicing processes are described. In an example, a method of dicing a semiconductor wafer having a front surface with a plurality of integrated circuits thereon and having a passivation layer disposed between and covering metal pillar/solder bump pairs of the integrated circuits involves laser scribing, without the use of a mask layer, the passivation layer to provide scribe lines exposing the semiconductor wafer. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, wherein the passivation layer protects the integrated circuits during at least a portion of the plasma etching. The method also involves thinning the passivation layer to partially expose the metal pillar/solder bump pairs of the integrated circuits.

A compressor assembly and the method of using the same which includes an elongated spiral passageway within which a compact toroid plasma, such as a compact toroid plasma structure, can be efficiently compressed to a high-energy state by compressing the compact toroid plasma structure by its own momentum against the wall of the spiral passageway in a manner to induce heating by conservation of energy. The compressor assembly also includes a burn chamber that is in communication with the spiral passageway and into which the compressed compact toroid plasma structure is introduced following its compression.

A gas discharge device constructed out of one or more plasma-shells with an organic luminescent substance located on an external portion of each plasma-shell, the organic substance being excited by photons from a gas discharge within the plasma-shell. In one embodiment, the plasma-shell is made of an inorganic luminescent substance. The external organic luminescent substance may contain or be combined with an inorganic substance that may also be a luminescent substance. The plasma-shell may contain both inorganic and organic substances.

An apparatus comprises a plasma flood gun for neutralizing a positive charge buildup on a semiconductor wafer during a process of ion implantation using an ion beam. The plasma flood gun comprises more than two arc chambers, wherein each arc chamber is configured to generate and release electrons into the ion beam in a respective zone adjacent to the semiconductor wafer.

An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Apparatuss of use of the apparatus in the practice of various processes are also provided by the present invention.

A retaining cap for a plasma torch is provided that includes fast securing threads. The retaining cap includes internal threads that couple to external threads of a torch body of the plasma torch. The internal and external threads may be multiple start threads having a thread angle greater than 60°. Plasma torches and plasma cutting systems are also provided.

An inductively coupled plasma charged particle source for focused ion beam systems includes a plasma reaction chamber with a removably attached source electrode. A fastening mechanism connects the source electrode with the plasma reaction chamber and allows for a heat-conductive, vacuum seal to form. With a removable source electrode, improved serviceability and reuse of the plasma source tube are now possible.

A method of ductile mode machining a component of a plasma processing apparatus wherein the component is made of nonmetallic hard and brittle material wherein the method comprises single point turning the component with a diamond cutting tool causing a portion of the nonmetallic hard and brittle material to undergo a high pressure phase transformation to form a ductile phase portion of the hard and brittle material during chip formation wherein a turned surface is formed from a phase changed material and the turned surface is a grooved textured surface of phase changed material.

A plasma processing chamber having capacitive and inductive coupling of RF power. An RF power source is connected to an inductive coil and to a top electrode via a variable capacitor to control the ratio of power applied to the coil and electrode. The bottom electrode, which is part of the chuck holding the substrates, is floating, but has parasitive capacitance coupling to ground. No RF bias is applied to the chuck and/or the substrate, but the substrate is chucked using DC power. In a system utilizing the chamber, the chuck is movable and is loaded with substrates outside the chamber, enter the chamber from one side for processing, exit the chamber from an opposite side after the processing, and is unloaded in an unloading chamber. The chuck is then transported back to the loading chamber. Substrates are delivered to and removed from the system using conveyor belts.

A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including an inductive antenna inductively coupled to plasma formed in the plasma discharge space and a primary winding coil transformer coupled to the plasma and wound in a magnetic core; and an alternating switching power supply for supplying plasma generation power to the inductive antenna and the primary winding coil. The hybrid plasma reactor induces a plasma discharge using the inductively coupled plasma source and the transformer coupled plasma source, so that it has a wide operational area from a low pressure area to a high pressure area.

The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

The invention provides a plasma processing apparatus in which ring-like conductors 8a and 8b are arranged closed to and along an induction antenna 1 composed of an inner circumference coil 1a and an outer circumference coil 1b. Ring-like conductors 8a and 8b are each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductors 8a and 8b and the induction antenna 1 and between the ring-like conductors 8a and 8b and the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna 1, and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.

Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.

There is provided an inductively coupled plasma reactor. The inductively coupled plasma reactor is connected to a transformer with multiple magnetic cores and a primary winding, to transfer an electromotive force for plasma discharge to a plasma discharge chamber of a reactor body. Parts of magnetic core positioned in side the plasma discharge chamber are protected by being entirely covered by a core protecting tube. The primary winding is electrically connected to a power supply source providing radio frequency power. In the inductively coupled plasma reactor, since a number of magnetic core cross sectional parts are positioned inside the plasma discharge chamber, the efficiency of transferring the inductively coupled energy to be connected with plasma is very high.

Sterilization and cleaning of an escalator hand rail are performed. A sterilization and cleaning device including a hand rail; a plasma source for irradiating the hand rails with ions or radicals or UV light; an enclosure for housing the plasma source; a power source for generating plasma; a fan for generating relatively negative pressure in the enclosure; filter units for removing removed bacteria, viruses, and organic matters such as hand marks; and filter plates located backward and forward of a moving direction of the hand rail in the enclosure along the hand rail is provided.

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state. Additional processes are directed to realtime process control during deposition, in particular based on identified independent process variables which can effectively control desired dependent process variables during deposition while still maintaining a well-matched power coupling reactor state.

Provided are an apparatus and a method for rapidly producing a synthetic gas from a bio-diesel byproduct using microwave plasma, in which, while a plasma flame is generated by a plasma generator and waste glycerin, a bio-diesel byproduct, as fuel, is gasified by being supplied to the generated plasma flame of high temperature, the fuel is supplied in various types to increase the contact time or the contact area with the plasma flame and thus promote gasification thereof and the contents of steam and oxygen supplied and the plasma power are controlled to increase the collection amount of combustible gas and thus allow rapid production of the synthetic gas.

A plasma gasification reactor, and process for its operation, with one or both of, first, a quench zone within an upper part of a top section of the reactor and, second, feed ports through a lateral wall of a middle section of the reactor for supplying feed material to a feed bed within the middle section and the feed ports located proximate the feed bed. The quench zone is provided with nozzles for introducing a fluid to reduce the temperature of molten solid bits sufficiently to minimize their sticking within external ductwork. The middle section feed port arrangement assists in more thorough reaction of light particles in the feed material that may otherwise exit with gaseous products.

A method of forming a synthesis gas utilizing a reformer is disclosed. The method utilizes a reformer that includes a plasma zone to receive a pre-heated mixture of reactants and ionize the reactants by applying an electrical potential thereto. A first thermally conductive surface surrounds the plasma zone and is configured to transfer heat from an external heat source into the plasma zone. The reformer further includes a reaction zone to chemically transform the ionized reactants into synthesis gas comprising hydrogen and carbon monoxide. A second thermally conductive surface surrounds the reaction zone and is configured to transfer heat from the external heat source into the reaction zone. The first thermally conductive surface and second thermally conductive surface are both directly exposed to the external heat source. A corresponding apparatus and system are also disclosed herein.

An aircraft communications system may include a RF-transparent enclosure, a plasma antenna element and a controller. The RF-transparent enclosure may be disposed substantially conformal with a portion of the aircraft. The plasma antenna element may be housed within the RF-transparent enclosure. The controller may be operably coupled to the plasma antenna element to provide control of operation of the plasma antenna element. The plasma antenna element may include one or more RF-conductive plasma devices that are selectively ionized to a plasma state under control of the controller.

A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.