Particularly, a thin-film solar cell panel or the like is processed without necessity of attaching and detaching of mask and washing steps with respect to a workpiece in a fine blasting employing a fine abrasive. A negative pressure space (20) and an opposing negative pressure space (40) having openings (22, 42) are opposed by being spaced at a movement allowable interval of the workpiece such as a thin-film solar cell panel or the like and so as to face one side edge in the same direction as a moving direction of the workpiece. Further, a fine abrasive is injected while relatively moving the workpiece in a moving direction (T) with respect to a blast gun (30) in which an injection hole (31) is disposed within the negative pressure space (20), and the fine abrasive injected into the negative pressure space (20) and/or the opposing negative pressure space (40) and a cut and removed cut scrap such as a thin film layer or the like are sucked and recovered through the intermediary of suction devices (21a, 21b) and/or an opposing suction device (41) respectively communicating with the spaces (20) and/or (40).

A film structure having a polymer film and an application system enabling the film structure to be handled in a simple manner. The application system is arranged on a first side of the polymer film and has at least one supporting film to which at least one gripping strip is applied. The polymer film also has at least one first region without a supporting film.

Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.

A light absorption anisotropic film, wherein content of a liquid crystalline non-colorable low molecular weight compound is 30% by mass or less; and which is obtained by fixing the alignment of a dichroic dye composition comprising at least one type of azo-based dichroic dye having nematic liquid crystallinity; and shows a diffraction peak derived from a periodic structure in a direction parallel to the alignment axis on measurement of X-ray diffraction. The light absorption anisotropic film is high in dichroism.

The present invention relates to an (amide amino alkane) metal compound represented by the formula (1): wherein M represents a metal atom;R1 represents a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms;R2 and R3 may be the same as, or different from each other, and each independently represents a linear or branched alkyl group having 1 to 3 carbon atoms, or R2 and R3 may form a substituted or unsubstituted 5- or 6-membered ring together with the nitrogen atom to which they are bound;Z represents a linear or branched alkylene group having 1 to 10 carbon atoms (a part of which may optionally form a ring); andn represents a number of the ligands, which is equal to the valence of the metal (M), and represents an integer of from 1 to 3; with the proviso that the metal compounds in which M is Li (Lithium), Be (Beryllium), Ge (Germanium) or Nd (Neodymium) are excluded;the metal compounds in which M is Mg (Magnesium) and R1 is methyl group are excluded;the metal compounds in which M is Zn (Zinc) and R1 is methyl group are excluded;the metal compounds in which M is Bi (Bismuth) and R1 is t-butyl group are excluded; andin cases where n is two or greater, two or more ligands may be the same as, or different from each other; and a method of producing a metal-containing thin film using the metal compound.

A light absorption anisotropic film, having at least one dichroic dye, in which the light absorption anisotropic film shows a diffraction peak derived from a periodic structure in a direction in a plane of the light absorption anisotropic film in X-ray diffraction measurement and the diffraction peak has a half width of 1.0 Å or less.

Disclosed is an azo compound represented by the formula (1) below, a salt thereof, or a copper complex salt compound thereof. (In the formula, R1 and R2 independently represent a hydrogen atom, a sulfonic acid group, a lower alkyl group or a lower alkoxyl group; R3-R6 independently represent a hydrogen atom, a lower alkyl group or a lower alkoxyl group; R7 represents a lower alkyl group or a lower alkoxyl group; and n represents 0 or 1.)

A liquid-crystal compound denoted by general formula (I) below wherein each of the groups is defined and Dye denotes an azo dye residue denoted by general formula (II) with X and n also being defined. The azo liquid-crystal compound is capable of orientation with a high degree of orientation order.

Provided is an adhesive composition for a protective film including an acrylic emulsion resin capable of providing contamination resistance on the film and low peel strength and minimizing generation of static electricity during peeling of the protective film. The acrylic emulsion resin includes a mixture including 80 to 99.9% by weight of a polymer of a (meth)acrylic acid ester monomer including a C1-C14 alkyl group and a (meth)acrylic acid ester monomer including an alkylene oxide unit, and 0.1 to 20% by weight of a monomer including a carboxyl group and/or a hydroxyl group or a combination thereof, and 5 to 30 parts by weight of a reactive emulsifier having a double bond structure radical-polymerizable with the polymer and including an alkylene oxide unit based on 100 parts by weight of the mixture.

The invention relates to multi-layer elastic thermoplastic films, which consist of at least one layer of thermoplastic polyurethane (TPE-U), at least one further layer of thermoplastic polyurethane which is blended with modified acrylonitrile-butadiene-styrene copolymer (MABS), and optionally at least one support layer of thermoplastic polymer which is incompatible with TPE-U, and to the use thereof.

A solar cell sealing film contains an ethylene-unsaturated ester copolymer, a crosslinker, and crosslinking auxiliary agents, wherein the solar cell sealing film contains a polyfunctional (meth)acrylate having 5 or more (meth)acryloyl groups in the molecule and triallyl isocyanurate as the crosslinking auxiliary agents, and a mass ratio of the polyfunctional (meth)acrylate to the triallyl isocyanurate is 0.06 to 0.3 parts of polyfunctional (meth)acrylate per 1 part of triallyl isocyanurate.

A perpendicular magnetic recording disk has a graded-anisotropy recording layer (RL) formed of at least two ferromagnetically exchange coupled CoPtCr-oxide magnetic layers (MAG1 and MAG2) with two nucleation films (NF1 and NF2) between the magnetic layers. NF1 is a metal film, preferably Ru or a Ru-based alloy like RuCr, sputter deposited on MAG1 at low pressure to a thickness between about 0.1-1.5 nm. NF2 is a metal oxide film, preferably an oxide of Ta, sputter deposited on NF1 at high pressure to a thickness between about 0.2-1.0 nm. MAG2 is sputter deposited over NF2. NF1 and NF2 provide a significant reduction in average grain size in the RL from a graded-anisotropy RL without nucleation films between MAG1 and MAG2, while also assuring that MAG1 and MAG2 are strongly exchange coupled.

An optical film has a cellulose acylate film base material containing cellulose acylate and a plurality of sugar ester compounds having different ester substitution degrees in which an average ester substitution degree of the plurality of sugar ester compounds is from 60 to 94%, and an antistatic hardcoat layer formed from a coating composition containing at least an organic antistatic agent and a curable compound having a (meth)acryloyl group in a molecule of the curable compound.

The printed image on a major face of a flexible food packaging film is covered by a shellac barrier coating.

A heat-assisted magnetic recording (HAMR) air-bearing slider has an optically-transparent protective film over the near-field transducer (NFT) to protect the NFT from excessive heat caused by the accumulation of carbonaceous material on the slider's overcoat. The NFT is thus separated from the overcoat by the protective film. The protective film does not cover the write pole end, which is covered only by the overcoat, so there is no spacing loss between the write pole end and the recording layer on the disk. In one embodiment the protective film is coplanar with the recording-layer-facing surface of the slider and the overcoat covers both the protective film and the write pole end. In another embodiment the overcoat has a window that surrounds the protective film, with the protective film being substantially coplanar with the air-bearing surface (ABS) of the slider. In both embodiments the smooth topography of the slider's ABS is maintained.

A film comprising a polymer blend of: (a) 0.15 to 0.8 wt % of an LDPE having an MI of 0.1 to 0.6 dg/min; and(b) 99.2 to 99.85 wt % of an LLDPE produced with a single-site catalyst comprising a metallocene and having a haze (HZlldpe), dart impact (DIlldpe), MD-Tear (MDTlldpe), and a slice long chain branching index of at least 0.90 for any portion of the composition having a molecular weight of 100,000 or above,wherein the film has a haze (HZblend), a dart impact (DIblend), and an MD-Tear (MDTblend), and HZblend=a*HZlldpe, where a is 0.20 to 0.70; DIblend=b*DIlldpe, where b is 0.9 to 1.3; and MDTblend=c*MDTlldpe, where c is 0.8 to 1.1.

There is stably provided a hydrophilic cured product, such as a single-layer film, in which anionic hydrophilic groups are concentrated at a surface that is in contact with the air and which is excellent in transparency and adhesion to a substrate and tends to be rarely cracked. The hydrophilic cured product or single-layer film comprising a resin composition is produced by applying a mixture containing a polyvalent monomer (II) having two or more (meth) acryloyl groups and a compound (IV) having a specific group and a sulfonic acid group to a substrate or the like, drying the mixture if necessary, and then performing polymerization.

An optical film of high planarity that even in the use of an optical film material containing a non-resinous additive in an amount of 5 mass % or more, would exhibit inexpensive satisfactory roll cleaning effects, and that would find application in, especially, various functional films such as a retardation film and a protective film for polarization plate for use in a liquid crystal display apparatus, etc.; and a process for producing the optical film. There is disclosed a process for producing an optical film according to a melting casting film forming method, including extruding a melt of resin blend containing a resin and 5 mass % or more of non-resinous additive through a casting die into a film form, wherein a first roller (5) for cooling has a temperature of the melting point of the additive to the glass transition temperature (Tg) of the resin blend. Preferably, the first roller (5) for cooling has a peripheral speed (S1) exhibiting a ratio between the same and the peripheral speed (S3) of a third roller (7) for cooling, S3/S1, of 1.001 to 1.05. Preferably, a filmlike molten blend is pressed against the first roller (5) for cooling at a linear pressure of 0.5 to 50 N/mm by means of a second roller (6) for pressure application.

The present invention generally pertains to multilayer film including four or more discrete layers. The films contain two external layers, an internal stiffening layer and an internal shrink layer. The external layers include linear low density polyethylene resin, the stiffening layer includes polypropylene or a high density polyethylene and the shrink layer includes low density polyethylene. The multilayer films of the present invention have a gloss of at least 62% at 45 degrees, together with a 2% secant tensile modulus greater than 400 MPa.

Disclosed herein is a thin film type chip device, including: a plurality of unit circuit structures laminated on a substrate; and an adhesive layer adhering the unit circuit structures to each other.

A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line. The slit patterns arranged at the respective slit regions in the vertical direction are spaced from each other with a distance of 8*d. Alternatively, the first to fourth slit regions may be arranged in reverse order, or in the vertical direction.

A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface of the amorphous silicon layer, crystallizing the amorphous silicon layer having the catalytic metal thereon into a polycrystalline silicon layer, annealing the polycrystalline silicon layer in an N2 gas atmosphere to stabilize the polycrystalline silicon layer, etching a surface of the polycrystalline silicon layer using an etchant, and patterning the polycrystalline silicon layer to form an island-shaped active layer.

The present invention provides a raw material for forming a strontium-containing thin film of a cyclopentadienyl-based strontium compound, which is in the liquid state at room temperature to 50° C., can be purified by distillation, present as a monomer, has high vapor pressure, and suitable for mass production, and a process for preparing the same. Sr[C5(CH3)4(C3H7)]2 is prepared by reacting Na[C5(CH3)4(C3H7)]2 or K[C5(CH3)4(C3H7)]2 with SrI2 in THF to produce a THF adduct of Sr[C5(CH3)4(C3H7)]2; evaporating THF and extracting the residue with toluene to give a toluene solution; evaporating toluene and drying the residue under reduced pressure; and heating to 100 to 160° C. in vacuo to dissociate and remove THF and distilling.

Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

The present invention provides a process for forming a strontium-containing thin film of a cyclopentadienyl-based strontium compound, which is in the liquid state at room temperature to 50° C., can be purified by distillation, present as a monomer, has high vapor pressure, and suitable for mass production. bis(propyltetramethylcyclopentadienyl)strontium is used as an Sr source to form a strontium-containing thin film such as a SrTiO3 film, a (Ba, Sr)TiO3 film by chemical vapor deposition or atomic layer deposition.

Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

A moving-film display device includes a moving-film having fixed and movable ends, and a stationary body having a counter face that is shaped more distant from the moving-film as a position of the counter face shifts from the fixed end side to the movable end side. A colored portion is disposed at the movable end of the moving-film. An auxiliary electrode is disposed on the moving-film between the fixed end and the movable end. A scanning electrode and holding electrode are disposed on the counter face to face the auxiliary electrode on the fixed end side and movable end side, respectively. A signal line is electrically connected to the holding electrode to supply an image signal. A drive section is configured to control voltages to be supplied to the auxiliary electrode, the scanning electrode, and the holding electrode.

The dual camera allows continuous wireless transmission of image data through radio waves to outside picture processing devices and continuous capture of images on frames of camera film rolls. A radio wave transmission attachment transmits image data though radio waves to outside picture processing devices. Several housing compartments of the dual camera receive camera film rolls. When images are captured on all frames of one camera film roll, a detachable housing compartment door is operable so that the camera film roll may be removed. While the camera film roll is being removed, the dual camera may simultaneously capture images on a remaining camera film roll in a filming position and the radio wave transmission attachment may transmit image data to outside picture processing devices without exposing the camera film roll in the filming position. Alternatively, a cable transmits radio wave image data to outside picture processing devices. An image radio wave converter of the dual camera converts photograph image data into radio wave image data.

An output thin film transistor threshold voltage offset compensation circuit, a GOA circuit, and a display. The circuit includes: a first capacitor, comprising a first electrode and a second electrode, the first electrode being connected to the gate of an output thin film transistor and receiving a charge signal, the second electrode being connected to the drain of the output thin film transistor, the first capacitor being used for, under the action of the charge signal, making the first electrode and the second electrode have a same voltage, so that a voltage difference between the drain and the source of the output thin film transistor is equal to a threshold voltage thereof; a first switch unit, connected to the drain and the source of the output thin film transistor, and opening under the action of a first clock signal, so that a voltage difference between the gate and the source of the output thin film transistor is equal to the threshold voltage thereof.

A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.

A protective film to a polarizer including a cellulose acylate and satisfying the following requirement (1) or (2): (1): The surface of the film has a pH of from 3.0 to 4.5.(2): The surface of the film has a pH of more than 4.5 and at most 6.0, and the film has a moisture permeability of at least 2800 g/m2·day.

The present invention discloses a tape substrate for chip on film structure of a liquid crystal panel. The tape substrate is provided with plural package units of chip on film structures arranged along its longitudinal direction, and the package unit has a driver chip, input leads and output leads. The longitudinal direction of the driver chip is parallel to the longitudinal direction of the tape substrate, and the input leads and the output leads are located at the two opposite sides of the driver chip. Each package unit is set up with a short side and a long side, and the input leads are formed at the short side, while the output leads are formed at the long side. In the package units adjacent to each other, the short side of one package unit joins the long side of a next package unit. This invention further discloses a liquid crystal panel having the tape substrate.

A Cu—Ni—Mo alloy thin film, including Ni as a solution element and Mo as a diffusion barrier element. Ni and Mo are co-doped with Cu. The enthalpy of mixing between Mo and Cu is +19 kJ/mol, and the enthalpy of mixing between Mo and Ni is −7 kJ/mol. The atomic fraction of Mo/Ni is within the range of 0.06-0.20 or the weight faction of Mo/Ni within the range of 0.10-0.33. The total amount of Ni and Mo additions is within the range of 0.14-1.02 at. % or wt. %. A method for manufacturing the alloy thin film is also provided.

The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element.

Disclosed are metal-containing precursors having the formula Compound (I) wherein: —M is a metal selected from Ni, Co, Mn, Pd; and —each of R-1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 are independently selected from H; a C1-C4 linear, branched, or cyclic alkyl group; a C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or tris alkyl); a C1-C4 linear, branched, or cyclic alkylamino group; or a C1-C4 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing and using the disclosed metal-containing precursors to deposit metal-containing films on a substrate via a vapor deposition process.

An apparatus and a method of manufacturing a thin film semiconductor device having a thin film transistor with improved electrical properties in organic light-emitting display apparatus are described.

Provided is an aggregate of carbon nanotubes wherein a mixture of 10 mg of aggregate of carbon nanotubes, 30 mg of sodium polystyrene sulfonate and 10 mL of water is subjected to ultrasonic homogenizer treatment, subsequently subjected to centrifugal treatment at 20000 G, then 9 mL of supernatant is sampled, and the content of aggregate of carbon nanotubes in the supernatant is 0.6 mg/mL or more. The aggregate of carbon nanotubes of the present invention can provide a dispersion of an aggregate of carbon nanotubes having a high concentration through very good dispersibility.

A surfactant film viewing apparatus having a chassis, film wand, and film wand positioning means. The chassis is opaque and has a magnifying lens and a light aperture to allow ambient light into the interior of the chassis. The chassis, with the exception of the light aperture and the magnifying lens, forms an substantially closed surface. The film wand has a hoop suitable for supporting a surfactant film across its span. The apparatus includes a means for positioning of said hoop in said interior of said chassis such that the position of said hoop relative to the magnifying lens is stable but manually adjustable so the surfactant film can be positioned for viewing by said magnifying lens. The apparatus may include a reservoir for the surfactant/water mixture, and the means for positioning may also include a means for dipping the hoop in the surfactant/water mixture. In an alternate embodiment the wand has multiple hoops each of which is capable of supporting a surfactant film, rotation of the wand bringing the surfactant films sequentially into view.

High tenacity, high elongation multi-filament polymeric tapes as well as ballistic resistant fabrics, composites and articles made therefrom. The tapes are fabricated from multi-filament fibers/yarns that are twisted together, bonded together, compressed and flattened.

A length-adjustable wrap film dispenser includes an outer tube member having a sleeve connection portion and a first engagement portion, and an inner tube member having an insertion portion axially movably and rotatably inserted into the sleeve connection portion of the outer tube member and a second engagement portion for engagement with the first engagement portion. When rotating the inner tube member relative to the outer tube member to disengage the second engagement portion from the first engagement portion, the inner tube member can be moved axially relative to the outer tube member to adjust the length of the length-adjustable wrap film dispenser. After adjustment, the inner tube member is rotated again to force the second engagement portion into engagement with the first engagement portion, locking the inner tube member and the outer tube member.

Methods for fumigating soil include providing a fumigant including at least one volatile substance into or onto soil and applying over the soil a multilayer polymeric film to form a vapor barrier between the fumigant-treated soil and the atmosphere to at least partially contain the fumigant. The multilayer film includes at least one barrier layer comprising at least one vinylidene chloride polymer and protecting layers on each side of the barrier layer. The multilayer film preferably has at least one UV protecting layer and optionally at least one reflective layer.

An apparatus and associated method are generally described as a thin film exhibiting a tuned anisotropy and magnetic moment. Various embodiments may form a magnetic layer that is tuned to a predetermined anisotropy and magnetic moment through deposition of a material on a substrate cooled to a predetermined substrate temperature.

An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate. The apparatus includes a mask disposed in such a way as to cover a part of the top surface of the substrate on an upstream side of a position where the sputtering film is formed, and a temperature regulator which regulates the temperature of the target.

An apparatus and associated method for reorienting the magnetic anisotropy of magnetic recording discs. A pallet that is moveable along a path of travel is also sized to selectively hold either a first magnetic recording disc of a first size or a second magnetic recording disc of a second size different than the first size. A first processing chamber in the path of travel is adapted for forming a soft underlayer (SUL) of magnetic material with non-radially oriented magnetic anisotropy on a substrate corresponding to one of the first and second magnetic recording discs. A second processing chamber in the path of travel downstream of the first processing chamber is adapted for selectively re-orienting the SUL's magnetic anisotropy via a magnetic source emanating a first magnetic field if the substrate corresponds to the first magnetic recording disc and emanating a different second magnetic field if the substrate corresponds to the second magnetic recording disc.

A metal material is provided with a bismuth coating which enables the subsequent coating to be accomplished at a high throwing power, and has excellent corrosion resistance, coating adhesion and is able to be produced with reduced damage to the environment. The metal material has a surface and a bismuth-containing layer deposited on at least a part of the surface of the metal material, wherein the percentage of bismuth atoms in the number of atoms in the surface layer of the metal material with a bismuth coating is at least 10%.

A filtering film structure includes a film, a conductive layer and a dielectric layer. The film includes a plurality of holes. The conductive layer is disposed on the inner surface of the holes, and the dielectric layer is disposed on the conductive layer. When applying a voltage to the conductive layer, an electrical charge layer forms on the surface of the dielectric layer.

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface containing an inorganic filler in an amount within a range of 70% by weight to 95% by weight based on the whole of the film for flip chip type semiconductor back surface.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.