Embodiments of the invention provide a device for measuring pitch and roll torques. The device comprises a sensor plate having a horizontal cross member, a vertical cross member and a surrounding member connecting ends of the horizontal and vertical cross members, wherein the horizontal cross member and the vertical cross member intersect each other at a centre region of the sensor plate; a VCM coil attached to the sensor plate and configured to generate a pitch and a roll torque when an electrical current is applied to the VCM coil; a first strain gauge attached to a surface of the horizontal cross member and configured to detect a horizontal strain caused by the pitch and roll torques; and a second strain gauge attached to a surface of the vertical cross member and configured to detect a vertical strain caused by the pitch and roll torques.

A computer system for monitoring head wear includes reading from a cartridge a high frequency pattern and a low frequency pattern, determining a first read amplitude corresponding to the high frequency pattern and a second read amplitude corresponding to the low frequency pattern, and determining a head wear metric according to the first read amplitude and the second read amplitude.

A window covering assembly, including a generally convex panel defining a perimeter. The panel further includes structural outer and inner layers and an impact absorbing layer disposed between the structural outer layer and the structural inner layer. A flange portion is connected to the generally convex panel and has a plurality of apertures formed therethrough. A plurality of fasteners are extendable through the apertures for engaging a structure.

A method of manufacturing a lithium-ion secondary battery electrode sheet disclosed herein includes the step of preparing powder 220 of granulated particles. In this step, the powder (220) of granulated particles (240) including active material particles (241) and a hinder (242) is prepared. The powder (220) is deposited on a strip-shaped collector foil (201) that is being conveyed. Then, the powder (220) is removed from widthwise center portions (202) and (203) of the collector foil (201), and a squeegee (106) is brought into contact with the powder (220) remaining on the opposite sides of the center portions (202) and (203) of the collector foil (201), thus adjusting the thickness of the powder (220). Subsequently, the powder (220) remaining on the opposite sides of the center portions (202) and (203) of the collector foil (201) is pressed.

The present invention provides a roll-to-roll continuous manufacturing process for producing a thermoplastic composite laminate comprising extruding a thermoplastic resin into a film article, surface treating a fiber material with a special sizing and laminating at least one layer of thermoplastic film and at least one layer of the surfaced treated fiber material into a composite sheet at a temperature above the melting or softening point of the thermoplastic film and under pressure applied by nipping rolls or nipping belts.

A method for manufacturing a protective concrete weight coating for pipelines The invention relates to materials for application to the outer surfaces of pipes as a protective negative buoyancy coating. It allows achieving accurately a desired density of the concrete protective weight coating of the pipeline in the range of 2600 to 3400 kg/m3 by claimed method of manufacturing a protective concrete weight coating for pipelines which includes mixing cement, aggregate, a plasticizing additive and water, pumping the resultant mixture into an annular space formed by the outer surface of a pipeline and a permanent form mounted with clearance thereon, and setting the resultant coating.

The invention is directed to a method for manufacturing a hardcoat film including a hardcoat layer having a surface of which a water contact angle is 65° or less by applying, drying, and curing a composition for forming the hardcoat layer on a base material film, in which the composition for forming the hardcoat layer contains the components (a) to (d) as defined herein, and, in a case in which a total solid content of the composition for forming the hardcoat layer is set to 100% by mass, a content of the component (b) is 40% to 80% by mass, a content of the component (c) is 10% to 40% by mass, and a content of the component (d) is 10% to 40% by mass.

There is disclosed a system for the electrostatic control of a metal wetting layer during deposition and a method of electrostatically controlling a metal wetting layer during deposition using a deposition system. In one example, control of the metal wetting layer is provided by changing or applying an electrostatic field acting on a deposited material or acting on a substrate on which a material is deposited. In another example, control is of the thickness of the metal wetting layer. In another example, control is of the presence or absence of the metal wetting layer. The metal wetting layer can be a liquid metal or liquid metal alloy, for example the metal wetting layer could be Boron, Aluminium, Indium, Gallium or Thallium. In another example, control is of the thickness, or presence, of a Gallium wetting layer during GaN film growth.

An adjusting method for adjusting an imprint apparatus includes a preparation step of preparing a sample for evaluating a state in which a contact region of a test mold is in contact with an imprint material supplied on a substrate; an evaluation step of evaluating the sample; and an adjustment step of adjusting the imprint apparatus based on a result of evaluation obtained in the evaluation step. The contact region includes a flat region which does not include a pattern, the evaluation in the evaluation step includes a first evaluation, which is an evaluation of a state of the imprint material in the flat region, and the imprint apparatus is adjusted based on a result of the first evaluation in the adjustment step.

The present invention provides a method for manufacturing a graphene composite film including preparing a zeolite suspension and a graphene oxide suspension containing graphene oxide, reducing the graphene oxide suspension until the graphene oxide is partially reduced to form partially-reduced graphene oxide, followed by adding the zeolite suspension and a surfactant into the partially-reduced graphene oxide suspension to form a composite solution, further reducing the composite solution until the partially-reduced graphene oxide is completely reduced to form graphene, and forming the composite solution into the graphene composite film on a substrate via plasma-enhanced atomizing deposition.

The present disclosure provides a method for manufacturing an energy-storage composite material. The method includes (a) providing a solution having a carbon substrate, and placing the solution in a pressure container, and a surface of the carbon substrate having an energy-storage active precursor; (b) stirring the solution having the carbon substrate at a first stirring speed, and venting air in the pressure container at a first temperature, such that a pressure in the pressure container reaches a first pressure and is maintained for a first period of time; and (c) introducing a fluid into the pressure container, stirring the solution having the carbon substrate at a second stirring speed, increasing a pressure and a temperature in the pressure container to a second pressure and a second temperature and maintaining for a second period of time, and then reducing the pressure to the atmosphere pressure to obtain an energy-storage composite material.

Disclosed are an LED illumination apparatus and its manufacturing method. A metal sheet is stamped to form a conductive plate with 3D space, and the conductive plate includes an illumination circuit, and a support frame for supporting the conductive plate to form different types of illumination apparatuses. The support frame is provided for supporting and fixing the conductive plate to facilitate the conductive plate to form a 3D curved surface, and an LED chip soldering point protection mechanism is provided for protecting each LED chip soldering point, so that the illumination apparatus is applicable for mass production to improve the yield rate and meet the high heat dissipation efficiency, large-range illumination, material saving, lightweight and/or environmental protection requirements.

This disclosure describes systems and methods related to filtering data requests. In some embodiments, a system may determine an execution plan tree. The system may determine a backend-processed target table in the at least one first storage device. The system may traverse at least one first branch and at least one first node in the execution plan tree. The system may traverse at least one second branch and at least one second node from the parent join node. The system may determine that the rowsource is referenced at the rowsource-access node. The system may determine that the rowsource referenced at the rowsource-access node is a filtered-rowsource. The system may extract at least one join column from a join condition associated with the backend-processed target table and the filtered-rowsource. The system may determine at least one storage location of the filtered-rowsource. The system may determine an adaptive processing path based at least in part on the at least one storage location of the filtered-rowsource, the at least one join column determined from the join condition and the at least one direct predicate determined for the filtered-rowsource. The system may generate at least one target filter predicate for the backend-processed target table.

Systems, methods, and non-transitory computer-readable media can obtain a first batch of content items to be clustered. A set of clusters can be generated by clustering respective binary hash codes for each content item in the first batch, wherein content items included in a cluster are visually similar to one another. A next batch of content items to be clustered can be obtained. One or more respective binary hash codes for the content items in the next batch can be assigned to a cluster in the set of clusters.

Systems, methods, and non-transitory computer-readable media can determine a profile model for a page that is accessible through the social networking system, the profile model describing one or more modal characteristics of users of the social networking system that have fanned the page. A determination can be made that the page should be recommended to a first user of the social networking system based at least in part on the profile model. At least one page recommendation that references the page can be provided to the first user.

The invention relates to a computer implemented method of storing/recovering in/from a storage data structure a multitude of sequences that have been aligned with a reference data structure. The information of the sequences is stored in different sections. Each section comprises data streams comprising specific data of the sequences having a reference position in the reference position range associated with the data stream. In a first section, the length of the sequences is stored. In a second section, the mutations of a sequence with respect to the reference sequence are stored. In a third section, consensus based quality values are linked with positions in the reference sequence. In a fourth section, the sequence identifiers are stored. The storage data structure has a format which is optimized for viewer, re-alignment, variant calling and other post-processing tools.

A self-monitoring time series database system which enforces usage policies is described. A time series database system receives an alert trigger condition for a system user, wherein the system user is associated with multiple time series data points corresponding to multiple subsystems of the time series database system. The time series database system aggregates the multiple time series data points in an internal time series data point, which is internal to the time series database system, associated with the system user. The time series database system evaluates whether the internal time series data point associated with the system user meets the alert trigger condition. The time series database system reduces a level of access by the system user to the time series database system in response to an evaluation that the internal time series data point associated with the system user meets the alert trigger condition.

An additive manufacturing device includes at least one liquefier assembly that receives filament material from at least one feedstock and extrudes the material in a flowable form. A thermal drying system removes water vapor and heats compressed air to a preselected temperature set point to form conditioned air. At least one enclosed filament path houses and guides the filament material from a supply to the at least one liquefier assembly. The enclosed filament path is exposed to the conditioned air from the thermal drying system so as to keep the filament material dry as it is fed to the at least one liquefier assembly.

Provided is an apparatus for capturing a target component from a gas including a rotating packed bed and a packed bed. The rotating packed bed has a first absorbent inlet, a first absorbent outlet, a first gas inlet and a first gas outlet. The packed bed has a second absorbent inlet, a second absorbent outlet, a second gas inlet and a second gas outlet. The first absorbent outlet is in connection with the second absorbent inlet to form an absorbent flow path that sequentially passes through the rotating packed bed and the packed bed. The second gas outlet is in connection with the first gas inlet to form a gas flow path that sequentially passes through the packed bed and the rotating packed bed.

A ductless fume hood suitable for the removal of various chemical materials including toxic and non-toxic gases, vapors, particles, dust and unpleasant odors from a fluid stream. The ductless fume hood uses electronic devices and software to enable real time monitoring of gas levels in parts per million.

A waste water insert has a wall surrounding a vertical bore. A horizontal flange extends outwardly from the upper end of the wall and has a lip formed on its outer periphery. The horizontal flange of the waste water insert is super-imposed over the horizontal flange of a waste water strainer located in a bathtub, sink or the like. The wall of the insert extends downwardly through the cylindrical wall of the waste water strainer with the two walls being spaced from each other by virtue of the cylindrical wall of the insert having a smaller diameter than that of the strainer.

A waste water insert has a wall surrounding a vertical bore. A horizontal flange extends outwardly from the upper end of the wall and has a lip formed on its outer periphery. The horizontal flange of the waste water insert is super-imposed over the horizontal flange of a waste water strainer located in a bathtub, sink or the like. The wall of the insert extends downwardly through the cylindrical wall of the waste water strainer with the two walls being spaced from each other by virtue of the cylindrical wall of the insert having a smaller diameter than that of the strainer.

The device has a line arrangement (2), which possesses an inlet (3) connectable to a supply line and an outlet (4) connectable to a shower arm (5). A heating element (6) serves for the provision of warm water. An energy store (7, 8) is provided, with which the power range for the provision of shower water can be extended. The heating element (6) for the provision of warm water is, in particular, a continuous-flow heater. The energy store (7, 8) is, in particular, a thermal, electrical, electrochemical or chemical energy store. During the shower process, the energy store is available as an additional energy source for the preparation of shower water.

Provided is a pool spring cover having an elongate tubular member with openings on first and second sides, respectively. The first and second sides span a longitudinal axis. An attachment member extends generally along the longitudinal axis from a first portion of the second side to a free end. A fastener comprised of a first fastener element and a second fastener element is provided. The first fastener element is associated with the attachment member at the free end and the second fastener element is associated with the tubular member at a second portion of the second side. The first and second fastener elements are adapted to fasten to each other such that the attachment member forms a loop. The first fastener element and the second fastener element may form a one-time use fastener. Also provided are related systems and methods.

A sink covering assembly for selectively concealing the contents of a sink includes a screen with a peripheral edge. A plurality of suction cups is coupled to the screen adjacent to the peripheral edge of the screen. Each of the suction cups is configured for engaging a surface adjacent to a sink whereby the screen extends over and covers the sink.

The present invention provides a method for measuring reflective intensity of display surface, including: obtaining a luminance value of a first display and a luminance value of a second display when displaying, the first display and the second display having the same observed luminance, the peripheral of the surface of the first display being surrounded by light-shielding object, the first display and the second display being placed side by side; and obtaining the reflective intensity of the display surface in the ambient based on the luminance value of the first display and the luminance values of the second display when displaying. As such, the present invention provides convenient and accurate means to measure the reflective intensity of display surface.

A combine harvester is provided that separates grain material from material other than grain using multiple processing areas, including a harvesting area, a feederhouse area, a threshing area, a cleaning area, and a grain delivery area. In a location at or prior to entering one of the processing areas, the material may be collected and held until a collection threshold is reached. Once it is determined that the collection threshold is reached, the material forming a first group of material may be transported from the location to the processing area or a subsequent processing area. The first group of material is transported from the location to the processing area or the subsequent processing area substantially simultaneously and thus simulates the gathering of a large amount of crop material even when small plots are involved. In this way, reduced cycle times may be achieved, and the efficiency benefits of large-plot harvesting may be extended to small-plot applications.

A semiconductor device includes a first moisture-resistant ring disposed in a peripheral region surrounding a circuit region on a semiconductor substrate in such a way as to surround the circuit region and a second moisture-resistant ring disposed in the peripheral region in such a way as to surround the first moisture-resistant ring.

A manufacturing method of a package substrate is provided. The method includes forming a first circuit layer on a carrier. A passive component is disposed on the first circuit layer and the carrier. A dielectric layer is formed on the carrier to embed the passive component and the first circuit layer in the dielectric layer. A second circuit layer is formed on the dielectric layer. The carrier is removed from the dielectric layer. A manufacturing method of a chip package is also provided.

A semiconductor mounting apparatus includes a storing unit that stores a liquid or a gas, a contact unit that comes into contact with a semiconductor chip when the storing unit is filled with the liquid or the gas, and a sucking unit that sucks up the semiconductor chip to bring the semiconductor chip into close contact with the contact unit.

A system for determining thickness variation values of a semiconductor substrate comprises a substrate vacuumed to a pedestal that defines a reference plane for measuring the substrate. A measurement probe assembly determines substrate CTV and BTV values, and defines a substrate slope angle. A thermal bonding assembly attaches a die to the substrate at a bonding angle congruent with the substrate slope angle. A plurality of substrates are measured using the same reference plane on the pedestal. Associated methods and processes are disclosed.

A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.

Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.

A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

The present invention provides a method for manufacturing the N-type TFT, which includes subjecting a light shielding layer to a grating like patternization treatment for controlling different zones of a poly-silicon layer to induce difference of crystallization so as to have different zones of the poly-silicon layer forming crystalline grains having different sizes, whereby through just one operation of ion doping, different zones of the poly-silicon layer have differences in electrical resistivity due to difference of grain size generated under the condition of identical doping concentration to provide an effect equivalent to an LDD structure for providing the TFT with a relatively low leakage current and improved reliability. Further, since only one operation of ion injection is involved, the manufacturing time and manufacturing cost can be saved, damages of the poly-silicon layer can be reduced, the activation time can be shortened, thereby facilitating the manufacture of flexible display devices.

A method of manufacturing a thin film transistor is disclosed. The method of manufacturing the thin film transistor includes: manufacturing a substrate; forming an oxide semiconductor layer on the substrate; forming a pattern including an active layer through a patterning process; forming a source and drain metal layer on the active layer; and forming a pattern including a source electrode and a drain electrode through a patterning process, an opening being formed between the source electrode and the drain electrode at a position corresponding to a region of the active layer used as a channel, wherein the step of forming the pattern including the source electrode and the drain electrode through a patterning process includes: removing a portion of the source and drain metal layer corresponding to the position of the opening through dry etching. The method may also be used to manufacturing a thin film transistor.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3'), a semiconductor-layer thin film (4') and a passivation-shielding-layer thin film (5') successively; forming a pattern (5') that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a'); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c') and a drain electrode (4b'). The source electrode (4c') and the drain electrode (4b') are disposed on two sides of the active layer (4a') respectively and in a same layer as the active layer (4a'). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

Manufacturing methods of JFET-type compact three-dimensional memory (3D-MC) are disclosed. In a memory level stacked above the substrate, an x-line extends from a memory array to an above-substrate decoding stage. A JFET-type transistor is formed on the x-line as a decoding device for the above-substrate decoding stage, where the overlap portion of the x-line with the control-line (c-line) is semi-conductive.

To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

A method for manufacturing an LDMOS device includes: providing a semiconductor substrate (200), forming a drift region (201) in the semiconductor substrate (200), forming a gate material layer on the semiconductor substrate (200), and forming a negative photoresist layer (204) on the gate material layer; patterning the negative photoresist layer (204), and etching the gate material layer by using the patterned negative photoresist layer (204) as a mask so as to form a gate (203); forming a photoresist layer having an opening on the semiconductor substrate (200) and the patterned negative photoresist layer (204), the opening corresponding to a predetermined position for forming a body region (206); and injecting the body region (206) by using the gate (203) and the negative photoresist layer (204) located above the gate (203) as a self-alignment layer, so as to form a channel region.

A method for producing an integrated power transistor circuit includes forming at least one transistor cell in a cell array, each transistor cell having a doped region formed in a semiconductor substrate and adjoining a first surface of the semiconductor substrate on a first side of the semiconductor substrate, depositing a contact layer on the first side, structuring the contact layer to form a contact structure from the contact layer, the contact structure having, in a projection of the cell array orthogonal to the first surface, a first section and, outside the cell array, a second section which connects the first section to an interface structure, and forming an electrode structure on and in direct contact with the first section in the orthogonal projection of the cell array, the electrode structure being absent outside the cell array.

An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system.

An apparatus and method for carrying and storing a portion of rope is claimed. A portion of rope is braided and wound about two complementary loops. Attached to one complementary loop is a flexible fastener. The flexible fastener can be passed through the second complementary loop and attached to itself. The apparatus can then be worn as a bracelet. When the rope is needed, the person can unwind the rope. After using the rope, the rope can be rewound and then bound with the flexible fastener.

A fastening strap and a manufacturing method thereof are provided. The fastening strap includes a first band and a second band. The first band has a first surface and a second surface. The first surface has a plurality of hooks of special configuration. The second band has a third surface and a fourth surface. The third surface is directly adhered to the second surface of the first band, and the fourth surface has a plurality of loops for being mechanically latched by the hooks on the first surface. The second surface and/or the third surface is printed with at least one pattern. After the first band and the second band are adhered together, the pattern can be seen from the first surface of the first band.

The present disclosure relates to an apparatus for fastening a power semiconductor using an integral springy (elastic) clip, capable of fixing a power semiconductor, such as a diode and a MOSFET, using elasticity of a U-shaped clip by integrally molding the clip onto a housing of a plastic module. The apparatus includes an elastic (springy) clip integrally molded onto a lower surface of the housing and downwardly curved into a U-like shape in a bridge module in which a bridge of the power semiconductor protrudes through a through hole of the housing to be connected to a printed circuit board, whereby the power semiconductor is fixed by a force that the housing presses the power semiconductor.

An exemplary device that is useful for controlling vibrations of an elevator load bearing member includes a guide. A mass is moveable relative to the guide responsive to vibration of the load bearing member to introduce a force to counter the vibration.

A container system for storing remains is provided, including a rigid storage vessel defining an inner chamber for receiving remains. The system includes at least one display frame member outside the rigid storage vessel for displaying information, such as a picture. A cap is provided proximate the storage vessel, wherein the cap defines at least one storage area for receiving an object.