[Problem] To present a manufacturing apparatus of a plate-like tooth profile member capable of forging and forming in one process by using a closed type die, being hardly accompanied by burrs due to plastic changes in the circumferential direction and in the axial direction of the material of the plate-like tooth profile member. [Solving Means] Consisting of an upper die 1 and a lower die 2 of closed type, the lower die 2 is composed of a tooth die 21 for forming a tooth portion in a material W of a plate-like tooth profile member, and movable dies 22, 22 movable relatively in a vertical direction to the tooth die 21 disposed at both sides in the axial direction of the material W of the plate-like tooth profile member of the tooth die 21, a first stroke is executed for confining the circumference at both end portions in the axial direction of the material W of the plate-like tooth profile member by the upper die 1 and the movable dies 22, 22, and a second stroke is executed for forming a tooth portion in the material W of the plate-like tooth profile member by the upper die 1 and the tooth die 21.

A method for manufacturing an Ni base alloy pipe stock comprises piercing and rolling a billet by use of Mannesmann piercing and rolling mill. The pipe stock has controlled amounts of C, Si, Mn, P, S, Cr, Ni, Mo, W, Cu, Al, N, with the balance being Fe. With the method, the following equations are satisfied, wherein values of TGBm, Psr and Pσ represented by the following equations (1) to (3) being not more than 1300, not more than 200 and not less than 0, respectively TGBm=1380−5000P−100S−4400C (1), PsrNi+10(Mo+0.5W)+100N (2), Pσ=(Ni−50)+10(N−0.1)−2(Cr−25)−5(Mo+0.5W−6)+12 (3), wherein each element symbol in the equations represents mass % of the element concerned.

The invention provides a method for producing grain-oriented silicon steel with single cold rolling, comprising: 1) smelting, refining and continuous casting to obtain a casting blank; 2) hot rolling; 3) normalization, i.e. normalizing annealing and cooling; 4) cold-rolling, i.e. single cold rolling at a cold rolling reduction rate of 75-92%; 5) decarburizing annealing at 780-880° C. for 80-350 s in a protective atmosphere having a due point of 40-80° C., wherein the total oxygen [O] in the surface of the decarburized sheet: 171/t≦[O]≦313/t (t represents the actual thickness of the steel sheet in mm), the amount of absorbed nitrogen: 2-10 ppm; 6) high temperature annealing, wherein the dew point of the protective atmosphere: 0-50° C., the temperature holding time at the first stage: 6-30 h, the amount of absorbed nitrogen during high-temperature annealing: 10-40 ppm; 7) hot-leveling annealing. The invention may control the primary recrystallization microstructure of steel sheet effectively by controlling the normalization process of hot rolled sheet to form sufficient favorable (Al, Si)N inclusions from nitrogen absorbed by slab during decarburizing annealing and low-temperature holding of high-temperature annealing, facilitating the generation of stable, perfect secondary recrystallization microstructure of the final products. In addition, the invention avoids the impact of nitridation using ammonia on the underlying layer in prior art, and thus the formation of a good glass film underlying layer is favored.

In a method of manufacturing a fiber-reinforced strand, the fiber-reinforced strand is so manufactured that the cross-section thereof becomes as circular as possible. Particularly a method of causing a reinforced fiber bundle 3 to pass through a resin bath means 7 and, thereafter, twisting the reinforced fiber bundle 3. The resin bath means 7 includes an impregnation region 21 where the reinforced fiber bundle 3 is impregnated with a thermoplastic resin 5 and a twisting region 22 where the reinforced fiber bundle 3 after the resin impregnation can be twisted, and the reinforced fiber bundle 3 after the resin impregnation is twisted in such a manner that a twist pitch P imparted to the reinforced fiber bundle 3 after the resin impregnation within a length L in the twisting region 22 satisfies L/3≧P≧3.15/90×(dtex)1/2.

An object is to provide a display device of an organic light emitting type suppressing luminance unevenness. The display device includes: a pixel including an organic light emitting element and a pixel circuit that controls a current supplied to the organic light emitting element; a first wiring 41 and a second wiring 42 supplying a first signal used for controlling the pixel circuit to the pixel circuit; and a third wiring 43 suppling a second signal used for controlling the pixel circuit to the pixel circuit. The first wiring 41 to the third wiring 43 are arranged inside an area in which the pixel circuit is arranged in a first direction, and the third wiring 43 is arranged between the first wiring 41 and the second wiring 42.

A valve timing adjusting device for and engine includes a sprocket configured to rotate by receiving drive power from a driving shaft, a vane rotor fixed to a driven shaft so as to be rotatable relative to the sprocket, a housing that includes an oil chamber housing the vane rotor and is fixed to one end in a thickness direction of the sprocket, a bolt fixing the sprocket to the housing, and a knock pin inserted into a sprocket hole formed in the sprocket at one end thereof and into a housing hole formed in the housing at the other end thereof to restrict relative relation between the sprocket and the housing. The knock pin abuts against an inner wall of the sprocket hole at one end thereof, and abuts against an inner wall of the housing hole at the other end thereof.

Provided is a method for manufacturing a high-quality porous film. Here, while the porous film is being manufactured through forming micropores by stretching, a raw film is prevented from slipping on the surfaces of the respective rolls as much as possible even though the raw film includes oil or liquid paraffin as a solvent. The method is for manufacturing a porous film through forming micropores by successive biaxial stretching. A tensile force applied to the raw film F transferring from the longitudinal stretching machine (10) to the transverse stretching machine (50) is set not less than a stretching force necessary for the longitudinal stretching, and thus the raw film is prevented from slipping on a contact surface between the raw film and each roll of the longitudinal stretching machine (10).

Disclosed is a new type of goods container which allows for economical transportation of bulk solids, especially low grade particulate matter. The container has a casing formed from woven metallic strips and is sealed from the inside. It is very strong and rigid providing it has been correctly filled and compacted. Novel apparatus for constructing the container is also provided as one method of filling and compacting the material to be transported. The container can be easily and quickly constructed at the filling site and scrapped at the end of its journey.

The present invention provides a novel cationized microfibrillated plant fiber and a method for manufacturing the same. A cationic microfibrillated plant fiber that is cationically modified with a quaternary-ammonium-group-containing compound, and that has an average diameter of 4 to 200 nm.

A manufacturing method of a proton exchange membrane is provided, which includes the steps as follows. The hydroxyl groups are disposed on the surface of a substrate by a hydrophilic treatment. The hydroxyl groups on the substrate are chemically modified with a coupling agent by a sol-gel process. The substrate is exposed to an amino acid with a phosphonate radical so that the amino acid containing a phosphonate radical can be chemically bonded with the coupling agent. The chemically bonded substrate is immersed in phosphoric acid for absorbing the phosphoric acid. The substrate blended with the phosphoric acid is placed between at least two leak-proof films for the purpose of preventing the leakage of the absorbed phosphoric acid. The proton exchange membrane manufactured by this method enable to retain the phosphoric acid in organic/inorganic complex form and micron/nano complex pore size.

A battery module and a method of manufacturing the same are provided. The battery module includes a case providing an internal space, a plurality of battery cells disposed in the internal space of the case, and at least one cooling unit interposed between the battery cells to be in surface contact with the battery cells and dissipating heat generated by the battery cells externally.

A candle with an embedded item and methods for manufacturing same are disclosed. A method for manufacturing a candle having an embedded item can include providing a first set of items of a first value and a second set of items of a second value different from the first value, combining the two sets to create a third set, and distributing the items of the third set among a set of candles, one item per candle, where the presence, nature, or value of the item within the candle is obscured. The method can further include selling the candles for a first price, wherein, the presence of the embedded item, the nature of the embedded item, the value of the embedded item, or the value of the embedded item relative to the first price is not known to the purchaser. The embedded item can comprise an object redeemable for a prize.

A method of manufacturing a lithium-ion secondary battery electrode sheet disclosed herein includes the step of preparing powder 220 of granulated particles. In this step, the powder (220) of granulated particles (240) including active material particles (241) and a hinder (242) is prepared. The powder (220) is deposited on a strip-shaped collector foil (201) that is being conveyed. Then, the powder (220) is removed from widthwise center portions (202) and (203) of the collector foil (201), and a squeegee (106) is brought into contact with the powder (220) remaining on the opposite sides of the center portions (202) and (203) of the collector foil (201), thus adjusting the thickness of the powder (220). Subsequently, the powder (220) remaining on the opposite sides of the center portions (202) and (203) of the collector foil (201) is pressed.

The present invention provides a roll-to-roll continuous manufacturing process for producing a thermoplastic composite laminate comprising extruding a thermoplastic resin into a film article, surface treating a fiber material with a special sizing and laminating at least one layer of thermoplastic film and at least one layer of the surfaced treated fiber material into a composite sheet at a temperature above the melting or softening point of the thermoplastic film and under pressure applied by nipping rolls or nipping belts.

A method for manufacturing a protective concrete weight coating for pipelines The invention relates to materials for application to the outer surfaces of pipes as a protective negative buoyancy coating. It allows achieving accurately a desired density of the concrete protective weight coating of the pipeline in the range of 2600 to 3400 kg/m3 by claimed method of manufacturing a protective concrete weight coating for pipelines which includes mixing cement, aggregate, a plasticizing additive and water, pumping the resultant mixture into an annular space formed by the outer surface of a pipeline and a permanent form mounted with clearance thereon, and setting the resultant coating.

The invention is directed to a method for manufacturing a hardcoat film including a hardcoat layer having a surface of which a water contact angle is 65° or less by applying, drying, and curing a composition for forming the hardcoat layer on a base material film, in which the composition for forming the hardcoat layer contains the components (a) to (d) as defined herein, and, in a case in which a total solid content of the composition for forming the hardcoat layer is set to 100% by mass, a content of the component (b) is 40% to 80% by mass, a content of the component (c) is 10% to 40% by mass, and a content of the component (d) is 10% to 40% by mass.

An adjusting method for adjusting an imprint apparatus includes a preparation step of preparing a sample for evaluating a state in which a contact region of a test mold is in contact with an imprint material supplied on a substrate; an evaluation step of evaluating the sample; and an adjustment step of adjusting the imprint apparatus based on a result of evaluation obtained in the evaluation step. The contact region includes a flat region which does not include a pattern, the evaluation in the evaluation step includes a first evaluation, which is an evaluation of a state of the imprint material in the flat region, and the imprint apparatus is adjusted based on a result of the first evaluation in the adjustment step.

The present invention provides a method for manufacturing a graphene composite film including preparing a zeolite suspension and a graphene oxide suspension containing graphene oxide, reducing the graphene oxide suspension until the graphene oxide is partially reduced to form partially-reduced graphene oxide, followed by adding the zeolite suspension and a surfactant into the partially-reduced graphene oxide suspension to form a composite solution, further reducing the composite solution until the partially-reduced graphene oxide is completely reduced to form graphene, and forming the composite solution into the graphene composite film on a substrate via plasma-enhanced atomizing deposition.

The present disclosure provides a method for manufacturing an energy-storage composite material. The method includes (a) providing a solution having a carbon substrate, and placing the solution in a pressure container, and a surface of the carbon substrate having an energy-storage active precursor; (b) stirring the solution having the carbon substrate at a first stirring speed, and venting air in the pressure container at a first temperature, such that a pressure in the pressure container reaches a first pressure and is maintained for a first period of time; and (c) introducing a fluid into the pressure container, stirring the solution having the carbon substrate at a second stirring speed, increasing a pressure and a temperature in the pressure container to a second pressure and a second temperature and maintaining for a second period of time, and then reducing the pressure to the atmosphere pressure to obtain an energy-storage composite material.

Disclosed are an LED illumination apparatus and its manufacturing method. A metal sheet is stamped to form a conductive plate with 3D space, and the conductive plate includes an illumination circuit, and a support frame for supporting the conductive plate to form different types of illumination apparatuses. The support frame is provided for supporting and fixing the conductive plate to facilitate the conductive plate to form a 3D curved surface, and an LED chip soldering point protection mechanism is provided for protecting each LED chip soldering point, so that the illumination apparatus is applicable for mass production to improve the yield rate and meet the high heat dissipation efficiency, large-range illumination, material saving, lightweight and/or environmental protection requirements.

An additive manufacturing device includes at least one liquefier assembly that receives filament material from at least one feedstock and extrudes the material in a flowable form. A thermal drying system removes water vapor and heats compressed air to a preselected temperature set point to form conditioned air. At least one enclosed filament path houses and guides the filament material from a supply to the at least one liquefier assembly. The enclosed filament path is exposed to the conditioned air from the thermal drying system so as to keep the filament material dry as it is fed to the at least one liquefier assembly.

A semiconductor device includes a first moisture-resistant ring disposed in a peripheral region surrounding a circuit region on a semiconductor substrate in such a way as to surround the circuit region and a second moisture-resistant ring disposed in the peripheral region in such a way as to surround the first moisture-resistant ring.

A manufacturing method of a package substrate is provided. The method includes forming a first circuit layer on a carrier. A passive component is disposed on the first circuit layer and the carrier. A dielectric layer is formed on the carrier to embed the passive component and the first circuit layer in the dielectric layer. A second circuit layer is formed on the dielectric layer. The carrier is removed from the dielectric layer. A manufacturing method of a chip package is also provided.

A semiconductor mounting apparatus includes a storing unit that stores a liquid or a gas, a contact unit that comes into contact with a semiconductor chip when the storing unit is filled with the liquid or the gas, and a sucking unit that sucks up the semiconductor chip to bring the semiconductor chip into close contact with the contact unit.

A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.

Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.

A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

The present invention provides a method for manufacturing the N-type TFT, which includes subjecting a light shielding layer to a grating like patternization treatment for controlling different zones of a poly-silicon layer to induce difference of crystallization so as to have different zones of the poly-silicon layer forming crystalline grains having different sizes, whereby through just one operation of ion doping, different zones of the poly-silicon layer have differences in electrical resistivity due to difference of grain size generated under the condition of identical doping concentration to provide an effect equivalent to an LDD structure for providing the TFT with a relatively low leakage current and improved reliability. Further, since only one operation of ion injection is involved, the manufacturing time and manufacturing cost can be saved, damages of the poly-silicon layer can be reduced, the activation time can be shortened, thereby facilitating the manufacture of flexible display devices.

A method of manufacturing a thin film transistor is disclosed. The method of manufacturing the thin film transistor includes: manufacturing a substrate; forming an oxide semiconductor layer on the substrate; forming a pattern including an active layer through a patterning process; forming a source and drain metal layer on the active layer; and forming a pattern including a source electrode and a drain electrode through a patterning process, an opening being formed between the source electrode and the drain electrode at a position corresponding to a region of the active layer used as a channel, wherein the step of forming the pattern including the source electrode and the drain electrode through a patterning process includes: removing a portion of the source and drain metal layer corresponding to the position of the opening through dry etching. The method may also be used to manufacturing a thin film transistor.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3'), a semiconductor-layer thin film (4') and a passivation-shielding-layer thin film (5') successively; forming a pattern (5') that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a'); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c') and a drain electrode (4b'). The source electrode (4c') and the drain electrode (4b') are disposed on two sides of the active layer (4a') respectively and in a same layer as the active layer (4a'). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

Manufacturing methods of JFET-type compact three-dimensional memory (3D-MC) are disclosed. In a memory level stacked above the substrate, an x-line extends from a memory array to an above-substrate decoding stage. A JFET-type transistor is formed on the x-line as a decoding device for the above-substrate decoding stage, where the overlap portion of the x-line with the control-line (c-line) is semi-conductive.

To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

A method for manufacturing an LDMOS device includes: providing a semiconductor substrate (200), forming a drift region (201) in the semiconductor substrate (200), forming a gate material layer on the semiconductor substrate (200), and forming a negative photoresist layer (204) on the gate material layer; patterning the negative photoresist layer (204), and etching the gate material layer by using the patterned negative photoresist layer (204) as a mask so as to form a gate (203); forming a photoresist layer having an opening on the semiconductor substrate (200) and the patterned negative photoresist layer (204), the opening corresponding to a predetermined position for forming a body region (206); and injecting the body region (206) by using the gate (203) and the negative photoresist layer (204) located above the gate (203) as a self-alignment layer, so as to form a channel region.

An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system.

A fastening strap and a manufacturing method thereof are provided. The fastening strap includes a first band and a second band. The first band has a first surface and a second surface. The first surface has a plurality of hooks of special configuration. The second band has a third surface and a fourth surface. The third surface is directly adhered to the second surface of the first band, and the fourth surface has a plurality of loops for being mechanically latched by the hooks on the first surface. The second surface and/or the third surface is printed with at least one pattern. After the first band and the second band are adhered together, the pattern can be seen from the first surface of the first band.

A modular casket made of lightweight materials is structurally reinforced using a structural sealant along at least the inner surfaces of the side panels, and optionally along at least side edge portions of a base panel to which the side panels are coupled, to stiffen and rigidize the casket against flexion along longitudinal and lateral axes, as well as torsional flexion. The structurally reinforced casket is sealed or more readily sealed against leakage and provides other benefits of structural stiffness and rigidity with relatively small cost and weight penalties.

A piston manufacturing device includes a first forming device (42) configured to form an annular groove (61) in a piston (11), and a second forming device (52) configured to press an edge (15) of an opening (14) of the piston (11) toward other end side in an axial direction of the piston (11) and to form a thick section (65) extruded from an inner circumferential surface (12b) arranged between the edge (15) and the groove (61) toward an axial center side of the piston (11), wherein a recessed section (53) is formed at a portion of the second forming device (52) that is arranged to abut the edge (15) so that an inner circumferential side of the edge (15) is plastically deformed toward the other end side in an axial direction of the piston (11).

Provided is an electronic device that is highly resistant to a water-soluble grinding oil and a method for manufacturing the same. An electronic device includes a main body and a cable including a lead wire, an insulating portion, and an outer coat, a first sealing portion that covers the insulating portion, and a second sealing portion that seals the first sealing portion, the insulating portion is made of a material that is more resistant to a water-soluble grinding oil than the outer coat is, and the first sealing portion is made of a material that has higher adherence to the insulating portion than that of the second sealing portion does.

An abrasive article includes a polymer matrix and abrasive grains dispersed in the polymer matrix, wherein the abrasive article has a void volume of at least 50%. The polymer matrix is polymerized from a monomer including at least one double bond.

An abrasive element comprises a body of crystalline abrasive material. The body has an array of cutting elements formed of crystalline abrasive material which projects from a surface of the body. The shape, size and form of the projections is controlled in the production process. The body may be a natural or synthetic crystal. The body may be a film formed by deposition. The body may be diamond or cubic boron nitride. The body may be monocrystalline or polycrystalline. The projections may be aligned along a crystallographic plane or planes.

Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a Young's modulus E in a range from 450 to 30000 kPa, and a density D in a range from 0.30 to 0.60 g/cm3.

The present invention provides a shearing die having longer life and a method for manufacturing the same. The shearing die includes a pair of substrates, at least one of which has a hard film formed by an arc ion plating method and located at least on a region of a curved surface and on an adjacent region from the end part of the curved surface on the side facing to the surface of the sheet or plate material to 300 μm along the surface of the substrate. The hard film comprises Al and one or more of Ti and Cr, and has a thickness of 1 to 5 μm, such that a number of metal particles having a diameter of 20 μm or more, which are present on a line segment having a length of 10 mm on a surface of the hard film, is 2 or less.

A method of manufacturing grooved polishing layers for use in chemical mechanical polishing pads is provided, wherein the formation of defects in the polishing layers are minimized.

A process writes phase shift error correction values into a phased-array antenna to normalize a range of manufacturing variances. An axial ratio is determined for an antenna weight vector (AWV) by making multiple measurements with the horn of a test antenna mechanically rotating from 0 to 180 degree or with dual polarization test antenna. For calibration of the whole array, each subarray is treated in the same fashion as equivalent to an antenna element in the subarray calibration. The subarray is electronically rotated as a whole (all elements rotated by the same phase shift value) from 0 to 360 degree during the full array calibration. Due to small power variation among AWVs, calibration solely by REV results fail to consistently converge to resolution. Accordingly, the apparatus measures and compares axial ratios. During final fabrication, the apparatus programs an AWV with best axial ratio into each non-transitory array element.

A planter for holding a plant includes a container having an open upper end. The container has side walls extending downward from the upper end and tapering inward to a lower end. A base at the lower end of the container has a diameter smaller than the diameter of the upper end. A circumferential ring surrounds the lower end of the container. The circumferential ring has an upper edge that extends outward from the container by a distance such that removal of the container and ring from a mold as a single unit would be inhibited. Accordingly, the container and the circumferential ring are molded from a thermoplastic material as separate components. The circumferential ring fits around the lower end of the container and is held in place by a mechanical interlock between the container and the ring.

This tool, which is in particular a hammer, comprises a gripping handle, a striking head, and an intermediate shaft extending the handle and supporting the head, whereas the handle comprises a tube in which the shaft partially extends, this tube and this shaft being made from a rigid material presenting a first hardness. This shaft has a radial area bearing against the tube, with interposition of a link part, for absorbing vibrations, made from flexible material presenting a second hardness that is much lower than the first hardness, and a free terminal area, not covered by the link part, radially separated from the walls of the tube so as to be able to vibrate freely in an internal volume of the tube.

Provided is a hardcoat film having a film thickness of 25 μm or less in which a polymerized substance of a compound having an energy ray-curable group and a resin are mixed across an entire region in a film thickness direction, in which a percentage of a mass concentration of the resin which is represented by the Expression (1) as defined herein has a distribution in which the percentage is maximized on at least one of two opposed surfaces, in the film thickness direction, of the hardcoat film or at a central part, in the film thickness direction, of the hardcoat film.