A method of manufacturing a chip resistor includes forming a resistor assembly in which a conductive member including portions separated from each other in a first direction is provided in a resistance body member; and dividing the resistor assembly into chip resistors, each including a chip-shaped resistance body formed by a part of the resistance body member, a pair of main electrodes formed by a part of the conductive member and separated from each other in the first direction, and a pair of sub-electrodes formed by a part of the conductive member, separated from each other in the first direction, and adjacent to the main electrodes in a second direction perpendicular to the first direction with concave portions recessed in the first direction interposed therebetween, by punching.

The object of the invention is to provide a method and an apparatus that allow production of metal plate chip resistors having a relatively low resistance with high accuracy and yield through simple process. The object is achieved by apparatus for manufacturing metal plate chip resistors including cutting mold for cutting intermediate product strip transversely to obtain worked product chip, ohm meter for measuring the resistance of the worked product chip, control device having a calculating part for performing a calculation using the resistance measured by the ohm meter to work out a width in which the strip is to be cut transversely so as to obtain a worked product chip of a desired resistance, and cutting width adjustor for making an adjustment so that the strip is to be cut transversely in the width obtained from the calculating part.

There is provided an array type chip resistor including: a chip body, four pairs of lower electrodes disposed on both sides of a lower surface of the chip body and formed so as to be extended to edges of the chip body, side electrodes formed so that the lower electrodes are extended to sides of the chip body, and a resistor interposed between the lower electrodes on the lower surface of the chip body and electrically connected to the lower electrode through a contact portion, wherein when a width of the side electrode is defined as d1, a distance between adjacent side electrodes is defined as d2, and a height of the side electrode is defined as h, in the case in which d1/d2 is 0.5 to 1.5, a value of h is 4,300/d1 μm or above and is 0.24d2+87.26 μm or less.

There are provided a chip resistor and a method of manufacturing the same. The chip resistor includes a ceramic substrate; an adhesion portion formed on a surface of the ceramic substrate; and a resistor formed on the adhesion portion, wherein the adhesion portion includes at least one of copper (Cu), nickel (Ni), and copper-nickel (Cu—Ni).

A touch panel includes a touch sensor layer including a first transparent electrode and a second transparent electrode, wherein an arrangement direction of the first transparent electrode can be perpendicular to that of the second transparent electrode, and both of the first and second transparent electrodes include two transparent metallic patterns which are stacked and electrically connected to each other.

A resistive device includes a resistive layer, a flexible substrate arranged on the resistive layer, and an electrode layer. The electrode layer includes two electrode sections arranged below the resistive layer and separate to each other. Moreover, a method for manufacturing the resistive device with flexible substrate is also disclosed.

A support disk fixing apparatus which includes an upper surface to which a wafer is bonded, a lower surface, a cylindrical side surface between the upper surface and the lower surface, and a chamfered portion between the upper surface and the side surface, includes a base upon which the support disk is placed; and a fixture that is provided on the base, and that has a first surface that abuts against the side surface of the support disk and covers the side surface of the support disk, and a second surface that abuts against the chamfered portion of the support disk and covers the chamfered portion of the support disk.

An ink jet recording head includes a substrate having a plurality of discharge energy generation elements and having an ink supply port, a protective film provided on the substrate and configured to protect wiring connected to the discharge energy generation elements, and an ink discharge port forming member, wherein the protective film has a protruding portion, wherein the ink discharge port forming member has a beam-like protrusion, wherein the beam-like protrusion has a reinforcing rib, and wherein a separation film containing gold is formed at a portion where the protruding portion and the reinforcing rib are held in close contact with each other.

A mobile terminal has a waterproof sheet interposed between a first body portion and a second body portion. The waterproof sheet is formed with a curved shaped or step-like cross-section in consideration of characteristic of internal component or a battery arranged on the first body portion of the mobile terminal, the curved shaped or step-like cross-section is configured to encase, in part or in whole, the internal component or the battery.

Disclosed herein is a thin film type chip device, including: a plurality of unit circuit structures laminated on a substrate; and an adhesive layer adhering the unit circuit structures to each other.

Disclosed herein are a printed circuit board and a method of manufacturing the same. The printed circuit board includes: a base substrate; an outer circuit layer formed on an upper portion of the base substrate and including a connection pad; a first solder resist formed on the upper portion of the base substrate so that the connection pad of the outer circuit layer is exposed; and a second solder resist formed on an upper portion of an outer circuit layer and formed so that the connection pad is exposed.

A capacitor includes: an anode part that is drawn from an anode body of a capacitor element to an element end-face, to be formed over the element end-face; a cathode part that is drawn from a cathode body of the capacitor element to the element end-face, to be formed over the element end-face; an anode terminal member that is disposed in a sealing member; a cathode terminal member that is disposed in the sealing member; an anode current collector plate that is connected to the anode part, and is also connected to the anode terminal member; and a cathode current collector plate that is connected to the cathode part, and is also connected to the cathode terminal member.

The electric tool is powered by a secondary battery as a power source, and includes: an output section configured to be transmitted thereto a rotation of a motor directly or through a decelerator; a voltage measurement section that measures a battery voltage; a storage means that stores, as a reference voltage, a voltage value of the battery voltage measured preliminarily when a motor-lock is occurring; and a control means that controls a driving of the motor. The control means is configured to decide that the motor is being locked and then stop or decelerate the motor upon detecting that the battery voltage measured through the voltage measurement section is maintained lower than or equal to the reference voltage stored in the storage means for a predetermined period of time during the driving of the motor.

Reduction in cooling rate of a substrate having a lower temperature is suppressed because the substrate having a lower temperature is not affected by radiant heat of a substrate having a higher temperature while cooling a plurality of substrates in a cooling chamber. The substrate processing apparatus includes a load lock chamber configured to accommodate stacked substrates; a first transfer mechanism having a first transfer arm provided with a first end effector, and configured to transfer the substrates into/from the load lock chamber at a first side of the load lock chamber; a second transfer mechanism having a second transfer arm provided with a second end effector, and configured to transfer the substrates into/from the load lock chamber at a second side of the load lock chamber; a barrier installed between the substrates to be spaced apart from the substrates supported by a substrate support provided in the load lock chamber; and an auxiliary barrier unit installed between the substrate support and the barrier, wherein the auxiliary barrier unit is installed at places other than standby spaces of the end effectors.

Boom drive apparatus for substrate transport systems and methods are described. The boom drive apparatus is adapted to drive one or more multi-arm robots rotationally mounted to the boom to efficiently put or pick substrates. The boom drive apparatus has a boom including a hub, a web, a first pilot above the web, and a second pilot below the web, a first driving member rotationally mounted to the first pilot, a second driving member rotationally mounted to the second pilot, a first driven member rotationally mounted to the boom above the a web, a second driven member rotationally mounted to the boom below the a web, and a first and second transmission members coupling the driving members to driven members located outboard on the boom. Numerous other aspects are provided.

A robot system includes a crane unit, a crane moving mechanism, a robot, and a controller. The crane unit is to suspend a workpiece. The crane unit moves in a horizontal direction via the crane moving mechanism. The robot is to move the crane unit in the horizontal direction via the crane moving mechanism. The controller is configured to control the crane unit to move upwardly to suspend the workpiece after controlling the robot to bring the crane unit into an engaging state in which the crane unit engages with the workpiece located at a first position. The controller is configured to control the crane unit suspending the workpiece to move downwardly to place the workpiece at a second position after controlling the robot to move the crane unit toward the second position while the crane unit suspends the workpiece.

This invention provides a biomolecule modifying substrate comprising biomolecules selectively fixed to given regions thereon. The biomolecule modifying substrate comprises: a substrate at least comprising a first surface and a second surface; a first linker molecule comprising a hydrocarbon chain and a functional group capable of selectively binding to the first surface at one end of the hydrocarbon chain, which is bound to the first surface via such functional group; a second linker molecule comprising a reactive group capable of binding to the hydrocarbon chain of the first linker molecule, which is bound to the first linker molecule via a bond between the reactive group and the hydrocarbon chain; and a biomolecule bound thereto via the second linker molecule.

One exemplary process for manufacturing a surgical apparatus may include providing a flat, generally-planar strip of biocompatible material; cutting the strip to produce a feeder belt with at least one lateral edge, and staples affixed to the feeder belt in proximity to at least one lateral edge, where the staples and feeder belt are substantially aligned along a first plane; and bending at least one staple out of the first plane, while the feeder belt remains in the first plane. Another exemplary process for manufacturing a surgical apparatus may include providing a flat, generally-planar strip of biocompatible material; cutting that strip to produce a feeder belt with edges, and staples affixed to different edges of the feeder belt; and coining at least one staple after the cutting.

According to one embodiment, a system for manufacturing a semiconductor device includes a spontaneous joining unit and a deformative joining unit. The spontaneous joining unit overlaps a first substrate and a second substrate and spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate. The deformative joining unit deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and joins the mutual peripheral portions of the respective joint faces.

Sliding element for seals includes 25 to 75 weight % carbonaceous impalpable powdery aggregate of non-graphitizing carbon and/or graphitizing carbon and 20 to 50 weight % synthetic resin as binder. The sliding element is blended with the range of 5 to 25 weight % carbonaceous carbon fibers without surface treatment and inside the carbon matrix, the carbon fibers are randomly scattered.

An improved manufacturing method for the hole-punching assembly of a hole-punching unit is disclosed. The method of the present invention comprises the following steps: (1) forming a plurality of aluminum balancing pieces with a rectangular shape by extrusion, and forming an indentation area on one side of each balancing piece; (2) forming an elongated slot by an application of stamping on the indentation area of each balancing piece; (3) obtaining a plurality of rectangular pieces (the number of which equals that of the balancing pieces), made of iron, and forming a row of holes by a single application of stamping on each rectangular piece; and (4) fitting each of the rectangular pieces onto the indentation area of a balancing piece, and connecting the balancing pieces together by screws or bolts. The manufacturing method can lower the production cost and simplify the production process of the hole-punching assembly.

Gum manufacturing machinery and method of manufacturing gum is illustrated in which a gum loafing machine generates loaves of finished gum that are then subsequently run through a gum conditioner to more uniformly set the temperature and viscosity of the gum material prior to further processing. Upon achieving the appropriate conditioning level, a further forming extruder may be used to generate a continuous gum ribbon for subsequent rolling and scoring operations. The gum conditioner may include vertically stacked conveyors that have different operational modes including a first mode that provides a serpentine path for a long residence time and a second mode that provides a cascading path that avoids or bypasses much of the length of some of the conveyors to provide a shorter residence time. The gum manufacturing machinery may be used in an adjustable manner so as to accommodate difference gum recipes for different batches of gum product.

A method and an installation are provided for preserving desired seasoning flavour profiles during the manufacturing of food-seasoning sheets. The method includes the steps of; laying a thin layer of adhesive on a base sheet; removing air from the adhesive prior to the step of laying; reducing free moisture from the adhesive during the step of laying, and depositing food-seasoning ingredients onto the thin layer of adhesive. The installation for manufacturing food-seasoning sheets includes an adhesive dispenser having a reservoir and a delivery slot communicating with the reservoir for dispensing adhesive. The dispenser has a heating element mounted thereto for heating the adhesive. The adhesive is made under a partial vacuum and it is conveyed to the dispenser in a partial vacuum.

An optical active fiber is configured with an asymmetrically-shaped core having at least one long axis and a shortest axis which extends transversely to the long axis. The outmost cladding of the active fiber is configured with a marking indicating the orientation of the short axis. The marking allows for bending the fiber so that the shortest axis extends along and lies in the plane of the bend thereby minimizing distortion of a mode which is guided by the asymmetrically-shaped core as light propagates along the bend.

A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer.

A manufacturing method for an excimer laser that includes a reflective Echelle diffraction grating includes obtaining information of a wavelength of a light source, a blazed order, a repetitive pitch of the grating, a material of the grating, and a predefined orientation ratio B/A that is a ratio between that a diffraction efficiency A of the blazed order and a diffraction efficiency Bb of an order lower by one order than the blazed order, and determining an initial value of a blaze angle based upon these pieces of information.

A wire-bound product using a double type laminated paper board and a method for manufacturing the same are disclosed. The wire-bound product employs a structure in which inner paper sheets are turned over in the rightward and leftward directions on front plates of a frame, instead a structure in which a plurality of inner paper sheets is turned over toward the rear surface of a frame, thereby allowing a user to see both surfaces of the inner paper sheets. Further, rear plates of the frame are inserted into various positions of a spring to support the front plates, thereby allowing a standing angle of the front plates of the frame to be adjustable.

In a machine (1) for manufacturing perfect-bound brochures (2) that includes a book block conveying device (10) with an endless conveying means (11), a plurality of clamps (14) that are arranged on the conveying means at a fixed pitch spacing (T) and serve for clamping book blocks (3, 3.1 . . . 3.8), and of at least one processing station (25, 18, 19, 20, 21, 22, 30) that can be adjusted in a motor-driven fashion, the cycle time (t0) referred to the conveyance of the clamps (14) by the pitch spacing (T) defined in the at least one processing station is divided into an adjusting segment (tV1, tV2) for resetting and/or adjusting the at least one processing station (25, 18, 19, 20, 21, 22, 30) in accordance with changing printed product characteristics and a processing segment (tB1, tB2) for processing the book blocks (3, 3.1 . . . 3.8) and/or covers (4, 4.1 . . . 4.4). The resetting of the at least one processing station to another printed product can take place within one work cycle (t0) of the respective processing station while the conveyance of the book blocks (3, 3.1 . . . 3.8) continues.

Method and device for manufacturing adhesively bound printed products composed of a book block and a cover, in which the book block is conducted past processing stations of the adhesive binding device for processing and applying glue to its back. A cover is supplied to the back to which glue has been applied in a synchronously timed controlled manner. After merging of the cover with the book block, a measuring procedure for measuring a mutual actual position of cover relative to book block. Subsequently, this actual position is compared to a predetermined desired position, and, in the case of deviations, a correction value is determined and stored. Prior to the renewed occurrence of the pairing of drive member and clamp, an appropriate change of the mutual positions of clamp and drive member is carried out.

Disclosed is a compressive album manufacturing apparatus in that independent areas for performing an aligning process, a heat providing process, a compressing process, and a cooling process respectively are formed in the multistage compressive album manufacturing apparatus, so that each process, which is done by hand, is merged into one, thereby rapidly manufacturing the bulk of compressive albums.

The present invention discloses an Oven Controlled Crystal Oscillator and a manufacturing method thereof. The Oven Controlled Crystal Oscillator comprises a thermostatic bath, a heating device, a PCB and a signal generating element, where the signal generating element is used for generating a signal of a certain frequency, the heating device, the PCB and the signal generating element are mounted in the thermostatic bath, the signal generating element is mounted in a groove formed on one side of the PCB, while the heating device is mounted against the other side of the PCB that is opposite to the groove. The signal generating element may be a passive crystal resonator or an active crystal oscillator. The Oven Controlled Crystal Oscillator according to the invention is advantageous for a small volume and a high temperature control precision.

The stack package includes a first semiconductor package and a second semiconductor package. The first semiconductor package includes a first substrate having a first modulus and at least one semiconductor chip mounted on the first substrate. The second semiconductor package stacked on the first semiconductor package and includes a second substrate having a second modulus and at least one semiconductor chip mounted on the second substrate. The second modulus is less than the first modulus. Even in the event that the first semiconductor package is under severe warpage due to a temperature change, the flexible second substrate, which includes e.g., polyimide or poly ethylene terephthalate, of the second semiconductor package may be less sensitive to the temperature change, thereby improving reliability of the stack package.

A through silicon via with sidewall roughness and methods of manufacturing the same are disclosed. The method includes forming a via in a substrate and roughening a sidewall of the via by depositing material within the via. The method further includes removing a backside of the substrate to form a through via with a roughened sidewall structure.

A multi-chip package is provided. The multi-chip package includes a plurality of chips including at least one bad chip and at least one good chip that are stacked and a plurality of through electrodes each penetrating the chips. A logic circuit included in the at least one bad chip is isolated from each of the plurality of through electrodes.

In various embodiments, a chip arrangement is provided. The chip arrangement may include a chip carrier and a chip mounted on the chip carrier. The chip may include at least two chip contacts and an insulating adhesive between the chip and the chip carrier to adhere the chip to the chip carrier. The at least two chip contacts may be electrically coupled to the chip carrier.

In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

A method for manufacturing a light-emitting device includes a step of forming an etching resistant protection layer on a substrate provided with an organic planarizing layer, a step of forming a plurality of electrodes on the etching resistant protection layer, a step of forming an organic compound layer on the substrate provided with the plurality of electrodes, a step of forming a resist layer on the organic compound layer formed on parts of electrodes among the plurality of electrodes using a photolithographic method, and a step of removing the organic compound layer in a region not covered with the resist layer by dry etching, wherein an entire surface of the organic planarizing layer on the substrate on which steps up to the step of forming the plurality of electrodes have been performed is covered with at least one of the etching resistant protection layer and the electrode.

An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.

It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

Disclosed is a semiconductor device including an oxide semiconductor film. A first oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 15 nm is formed over a gate insulating layer. First heat treatment is performed so that crystal growth from a surface of the first oxide semiconductor film to the inside thereof is caused, whereby a first crystal layer is formed. A second oxide semiconductor film with a thickness greater than that of the first oxide semiconductor film is formed over the first crystal layer. Second heat treatment is performed so that crystal growth from the first crystal layer to a surface of the second oxide semiconductor film is caused, whereby a second crystal layer is formed. Further, oxygen doping treatment is performed on the second crystal layer.

To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

A semiconductor device having favorable electric characteristics and a manufacturing method thereof are provided. A transistor includes an oxide semiconductor layer formed over an insulating layer, a source electrode layer and a drain electrode layer which overlap with part of the oxide semiconductor layer, a gate insulating layer in contact with part of the oxide semiconductor layer, and a gate electrode layer over the gate insulating layer. In the transistor, a buffer layer having n-type conductivity is formed between the source electrode layer and the oxide semiconductor layer and between the drain electrode layer and the oxide semiconductor layer. Thus, parasitic resistance is reduced, resulting in improvement of on-state characteristics of the transistor.

A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.

A sensor substrate includes a blocking pattern disposed on a base substrate, a first electrode disposed on the base substrate and overlapping the blocking pattern, the first electrode including a plurality of first unit parts arranged in a first direction, each of the first unit parts including a plurality of lines connected to each other in a mesh-type arrangement, a color filter layer disposed on the base substrate, a plurality of contact holes defined in the color filter layer and exposing the first unit parts, and a bridge line between and connected to first unit parts adjacent to each other in the first direction, through the contact holes.

An opposed substrate (9') comprises: a substrate (1); a static electricity protective electrode (2), a bridging electrode (4) and a touch induction electrode (6) comprising a plurality of sub-units sequentially formed on the substrate (1), wherein the distribution of the static electricity protective electrode (2) on the substrate (1) corresponds to dummy regions between sub-units, and the static electricity protective electrode (2), the bridging electrode (4) and the touch induction electrode (6) are insulated from each other. The opposed substrate (9') has a good touching effect. A method for manufacturing the opposed substrate, and a liquid crystal display touch panel are also disclosed.

In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.