A method in a circuit comprises providing a first clock by a resistor-capacitor (RC) oscillator; demodulating a plurality of input signals to form a plurality of demodulated input signals; discriminating frequency ranges of the plurality of demodulated input signals according to the first clock; determining whether a first predetermined number of consecutive demodulated input signals among the plurality of demodulated input signals fall into a first predetermined frequency range; triggering a crystal oscillator to provide a second clock to calibrate the first clock if the first predetermined number of consecutive input signals fall into the first predetermined frequency range.

The present disclosure relates to nanoresonator oscillators or NEMS (nanoelectromechanical system) oscillators. A circuit for measuring the oscillation frequency of a resonator is provided, comprising a first phase-locked feedback loop locking the frequency of a controlled oscillator at the resonant frequency of the resonator, this first loop comprising a first phase comparator. Furthermore, a second feedback loop is provided which searches for and stores the loop phase shift introduced by the resonator and its amplification circuit when they are locked at resonance by the first loop. The first and the second loops operate during a calibration phase. A third self-oscillation loop is set up during an operation phase. It directly links the output of the controllable phase shifter to the input of the resonator. The phase shifter receives the phase-shift control stored by the second loop.

A digitally controlled oscillator has a high-order ΔΣ modulator configured to be of at least an order higher than a first order and configured to input a digital control signal and output a pseudorandom digital output signal, a first-order ΔΣ modulator configured to input the pseudorandom digital output signal and generate a control pulse signal including a pulse width corresponding to the pseudorandom digital output signal, a low pass filter configured to pass a low frequency component of the control pulse signal, and an oscillator configured to generate a high-frequency output signal whose frequency is controlled based on the control pulse signal outputted by the low pass filter so as to be a frequency corresponding to the digital control signal.

An integrated circuit (10) has an internal RC-oscillator (20) for providing an internal clock signal (CLI) having an adjustable oscillator frequency. The integrated circuit (10) further comprises terminals (101, 102) for connecting an external LC tank (30) having a resonance frequency and a calibration circuit (40) which is configured to adjust the oscillator frequency based on the resonance frequency of the LC tank (30) connected during operation of the integrated circuit (10). An internal auxiliary oscillator (46) is connected to the terminals (101, 102) in a switchable fashion and is configured to generate an auxiliary clock signal (CLA) based on the resonance frequency. The calibration circuit (40) comprises a frequency comparator (47) which is configured to determine a trimming word (TRW) based on a frequency comparison of the internal clock signal (CLI) and the auxiliary clock signal (CLA). The LC tank (30) to be connected is an antenna for receiving a radio signal.

A digitally-controlled oscillator includes a base frequency generator having an odd number of base inverters connected end-to-end to generate an output signal that oscillates at a predetermined frequency and a frequency-adjusting unit connected to the base frequency generator. The frequency-adjusting unit includes a first string of switchable inverters connected in series with each other, the switchable inverters having sizes that decrease from an input end of the first string to the output end of the first string.

An oscillator module includes a first MOS transistor and a capacitor. The capacitor is coupled between a gate and source of the first MOS transistor. The drain of the first MOS transistor receives a first bias current and generates an oscillating output signal. A switching circuit operates in response to the oscillating output signal to selective charge and discharge the capacitor. A current sourcing circuit is configured to generate the bias current. The current sourcing circuit includes a second MOS transistor which has an identical layout to the first MOS transistor and receives a second bias current. A resistor is coupled between a gate and source of the second MOS transistor. The current sourcing circuit further includes a current mirror having an input configured to receive a reference current passing through the resistor and generate the first and second bias currents.

An integrated structure of compound semiconductor devices is disclosed. The integrated structure comprises from bottom to top a substrate, a first epitaxial layer, an etching-stop layer, a second epitaxial layer, a sub-collector layer, a collector layer, a base layer, and an emitter layer, in which the first epitaxial layer is a p-type doped layer, the second epitaxial layer is an n-type graded doping layer with a gradually increased or decreased doping concentration, and the sub-collector layer is an n-type doped layer. The integrated structure can be used to form an HBT, a varactor, or an MESFET.

Systems and methods for switching impedance are provided. In some aspects, a system includes first and second impedance elements and an impedance switch module, which includes a third impedance element coupled between the first and second impedance elements and a switch parallel to the third impedance element. The switch is coupled between the first and second impedance elements, and is configured to switch between an open configuration and a closed configuration. An electrical path is completed between the first impedance element and the second impedance element via the first switch in the closed configuration. The electrical path is not completed in the open configuration. A total impedance of the first impedance element, the second impedance element, and the impedance switch module is varied based on the switching between the open configuration and the closed configuration.

The present invention proposes a digital system and method of measuring (estimating) non-energy parameters of the signal (phase, frequency and frequency rate) received in additive mixture with Gaussian noise. The first embodiment of the measuring system consists of a PLL system tracking variable signal frequency, a block of NCO full phase computation (OFPC), a block of signal phase primary estimation (SPPE) and a first type adaptive filter filtering the signal from the output of SPPE. The second embodiment of the invention has no block SPPE, and NCO full phase is fed to the input of a second type adaptive filter. The present invention can be used in receivers of various navigation systems, such as GPS, GLONASS and GALILEO, which provide precise measurements of signal phase at different rates of frequency change, as well as systems using digital PLLs for speed measurements.

A system is disclosed for a voltage controlled oscillator (“VCO”) having a large frequency range and a low gain. Passive or active circuitry is introduced between at least one VCO cell in the voltage controlled oscillator and the voltage source for the VCO cell which reduces a gain value for the VCO to maintain stability of the system.

An injection locking oscillator (ILO) comprising a tank circuit having a digitally controlled capacitor bank, a cross-coupled differential transistor pair coupled to the tank circuit, at least one signal injection node, and at least one output node configured to provide an injection locked output signal; a digitally controlled injection-ratio circuit having an injection output coupled to the at least one signal injection node, configured to accept an input signal and to generate an adjustable injection signal applied to the at least one injection node; and, an ILO controller connected to the capacitor bank and the injection-ratio circuit configured to apply a control signal to the capacitor bank to adjust a resonant frequency of the tank circuit and to apply a control signal to the injection-ratio circuit to adjust a signal injection ratio.

The invention relates to a method for operating control equipment (1) of a resonance circuit (2), wherein the control equipment (1) comprises at least two circuit elements (8, 9) connected in series, in particular each comprising a recovery diode (13, 14) connected in parallel, between which a connection (6) of the resonance circuit (2) is connected. According to the invention, the circuit elements (8, 9) are actuated as a function of the voltage detected at the connection (6). The invention further relates to control equipment (1) of a resonance circuit (2).

Disclosed are a phase locked loop (PLL) of a digital scheme and a method thereof. More specifically, disclosed are a digital phase locked loop having a time-to-digital converter (TDC), a digital loop filter (DLF), and a digitally controlled oscillator (DCO), and that is designed to have a constant jitter characteristic at all times even though an operating condition of a circuit varies according to a process, voltage, temperature (PVT) change, and a method thereof.

A current output control device is provided that includes: a current cell array section including plural current cell circuits that are each connected in parallel between a first terminal (power source) and a second terminal (ground) that connect between the first terminal and the second terminal in by operation ON so as to increase control current flowing between the first terminal and the second terminal; and a code conversion section (decoder) that generates signals (row codes, column codes) to ON/OFF control current cells so as to change the number of current cells that connect the first terminal and the second terminal according to change in an externally input code and that inputs the generated signals to the current cell array section.

A ring oscillator circuit causing a pulse signal to circulate around a circle to which an even number of inverting circuits are connected in a ring, wherein one of the inverting circuits is a first starting inverting circuit, which drives a first pulse signal according to a control signal, another of the inverting circuits is a second starting inverting circuit, which drives a second pulse signal based on a leading edge of the first pulse signal, still another is a third starting inverting circuit, which drives a third pulse signal based on the leading edge of the first pulse signal after the second pulse signal is driven, and the first to third starting inverting circuits are arranged within the circle of the inverting circuits in order of the third, second, and first pulse signals in traveling directions of the pulse signals.

A ring-oscillator-based on-chip sensor (OCS) includes a substrate having a semiconductor surface upon which the OCS is formed. The OCS includes an odd number of digital logic stages formed in and on the semiconductor surface including a first stage and a last stage each including at least one NOR gate including a first gate stack and/or a NAND gate including a second gate stack. A feedback connection is from an output of the last stage to an input of the first stage. At least one discharge path including at least a first p-channel metal-oxide semiconductor (PMOS) device is coupled between the first gate stack and a ground pad, and/or at least one charge path including at least a first n-channel metal-oxide semiconductor (NMOS) device is coupled between the second gate stack a power supply pad.

Arrays of resonator sensors include an active wafer array comprising a plurality of active wafers, a first end cap array coupled to a first side of the active wafer array, and a second end cap array coupled to a second side of the active wafer array. Thickness shear mode resonator sensors may include an active wafer coupled to a first end cap and a second end cap. Methods of forming a plurality of resonator sensors include forming a plurality of active wafer locations and separating the active wafer locations to form a plurality of discrete resonator sensors. Thickness shear mode resonator sensors may be produced by such methods.

An electronic oscillator circuit has a first oscillator, for supplying a first oscillation signal, a second oscillator, for supplying a second oscillation signal, a first controller for delivering the first control signal as a function of a phase difference between a first controller input and a second controller input of the first controller; a second controller for delivering the second control signal as a function of a phase difference between a first controller input of the second controller and a second controller input of the second controller; a resonator; at least a second resonance frequency, with a first phase shift dependent on the difference between the frequency of a second exciting signal and the second resonance frequency and processing means, for receiving the first oscillator signal and the second oscillator signal, determining their mutual proportion, looking up a frequency compensation factor in a prestored table and outputting a compensated oscillation signal.

A circuit includes first and second transconductance stages that generate first and second currents, respectively, in response to an input signal. A current combiner circuit selectively couples the first current to a first output, selectively couples the second current to the first output, selectively couples the first current to a second output, and selectively couples the second current to the second output. In response to the first current being coupled to both the first and second outputs, the current combiner circuit couples the second current to both the first and second outputs. In response to the first current being decoupled from the second output, the current combiner circuit decouples the second current from both the first and second outputs. In response to the first current being decoupled from the first output, the current combiner circuit decouples the second current from both the first and second outputs.

An assembly structure of an electronic control unit and a coil assembly of a solenoid valve for an electronic brake system connected to the electronic control unit having a printed circuit board and applying power to the solenoid valve. The coil assembly is penetrated to allow an upper portion of the solenoid valve to be fitted thereinto, and includes a cylindrical bobbin provided with a coil and a coil case. The electronic control unit is provided with a housing having an insertion groove and joined to the hydraulic control unit, the printed circuit board being disposed spaced apart from the coil assembly, and the housing is provided with an elastic member having one end contacting the printed circuit board and the other end contacting the coil case. The elastic member is configured with a coil spring to produce different elastic forces.

The invention provides a switching valve having a valve element which is movable in a housing, an actuating apparatus acting on the valve element in a first direction and a spring apparatus charging the valve element in a second direction. According to the invention, the first and second directions are in opposition and the spring apparatus has a progressive spring characteristic.

A flush adaptor for use with a valve fitment assembly for dispensing liquids from a container; wherein the flush adaptor comprises an outer ring-collar; a flange with an edge molded to the bottom of the outer ring-collar; an interior ring-collar adjacent to the outer ring-collar; a ridge molded in the interior ring-collar; a seat molded onto the interior ring-collar and a pin molded into the interior ring-collar which keeps the valve in an open position; and a hollow tube molded into the adaptor to allow the flow of liquid through the adaptor and into the fitment assembly; whereby the flush adaptor allows for cleaning of the assembly and any tubes connected thereto.

An actuator includes a first piston and a second piston. The first piston has a piston ring that separates a first chamber from a second chamber of the actuator. The first piston has an interior chamber that communicates with the first chamber. The second piston is disposed within the interior chamber of the first piston so as to be movable with respect thereto. The second piston has a surface that interfaces with the second chamber.

An apparatus includes a light foil device configured to move based on radiation pressure associated with light received by the light foil device. The apparatus includes a mechanism configured to transition between operational states in response to the movement of the light foil device, or includes a valve configured to control a flow of material through a conduit based, at least in part, on the movement of the light foil device.

Water valves and methods of regulating fluid flow for low ambient pressure water sources that reduce the amount of filtration needed for valve mechanisms operating in the water source.

In a control device for a technical processing plant, a pneumatically driven actuator having an actuator stem is provided together with a valve operated by the actuator, the valve having a valve stem. A valve element is attached to the valve stem. A stem connector connects the two stems to each other for a forced transmission of axial actuating movements and for modifying an axial distance between adjacent ends of the valve stem and the actuator stem to adjust a total axial length of the two stems. The stem connector comprises two half-shells connected to each other, and two positioning devices are provided for a friction-locking coupling of the half-shells to the respective ends. At least one of the positioning devices is designed to modify an axial attachment position of the half-shells along one of the stems.

A flow control valve element has a generally spherical ball. An inlet is formed in the ball. An outlet is also formed in the ball, the outlet opposing the inlet. A hollowed-out portion extends between the inlet and the outlet. A pair of opposing flats are formed in the ball, the flats each having a first flat portion formed in an external portion of the ball and an opposing second flat portion formed in the hollowed-out portion of the ball.

A method for operating a processing system, in which product units of different formats are processed. The processing system contains a plurality of processing devices that are arranged one after the other in a processing line. In the event of a format changeover, certain component arrangements arranged in the processing system must be adapted to the new product format. In the event of an upcoming format change, a gap in the conveyed goods is generated while the conveying operation is maintained, wherein the gap in the conveyed goods runs through the processing system along the processing devices. As soon as the gap in the conveyed goods runs through a component arrangement to be adapted to the new format, the format is changed over at the component arrangement while the gap in the conveyed goods runs through the component arrangement.

An image forming apparatus may include an image forming unit, a stacking unit, a control unit, and an alignment unit. The image forming unit forms an image on a recording material having a type. The stacking unit stacks the recording material on which the image formation is formed by the image forming unit. The control unit sets a predetermined number of sheets to a number that corresponds to the type of the recording material. The alignment unit aligns the recording material if the predetermined number of sheets of the recording material is stacked by the stacking unit.

A method for operating a thread stitching machine for processing printed sheets to form book blocks includes providing at least one sewing station with an active connection to at least one stitching saddle and providing the at least one stitching saddle with an active connection to at least one transporting system. The printed sheets are supplied to the at least one stitching saddle, using the at least one transporting system, in at least one of a substantially vertical and a substantially horizontal plane relative to the at least one stitching saddle. At least the printed sheets in the substantially vertical plane are supplied directly onto the at least one stitching saddle or to a region of the at least one stitching saddle. The printed sheets are supplied to the at least one sewing station resting astride the at least one stitching saddle.

In an embodiment, a processor-readable medium stores code representing instructions that when executed by a processor cause the processor to receive sheet length data for two paper sheets of a same standard dimension passing consecutively through a printing device. The processor calculates a length difference between the two paper sheets, and when the length difference exceeds a two-sheet threshold, it initiates an alignment correction cycle in a paper finishing device.

An image recording apparatus includes: a recording unit for recording an image on a recording medium; a tray for supporting the recording medium recorded by the recording unit; a conveyor mechanism for conveying the recorded medium to the tray; and an alignment mechanism for aligning a plurality of recording media stacked on the tray, by application of an external force. In a period from a start to an end of recording based on one recording job, the alignment mechanism aligns the plurality of recording media stacked on the tray in a period in which image recording is not performed, and the alignment mechanism does not align the plurality of recording media stacked on the tray in a period in which image recording is being performed.

A first discharging portion that discharges a sheet received from one of image forming apparatus and a second discharging portion discharges a sheet received from another image forming apparatus are disposed opposite each other to stack the sheets discharged in a common processing tray. A controller controls the first and second discharging portions when the sheets are continuously discharged by the first and second discharging portions, controls a timing when the sheets are discharged by the first discharging portion and the second discharging portion to the common processing tray such that a leading edge of the sheet discharged from one of the discharging portions abuts on a sheet surface in the downstream of a discharging direction below a leading edge of the sheet discharged from the other discharging portion.

An apparatus including a die including a dielectric material on a device side, an insulating layer surrounding a die area and embedding a thickness dimension of the die; and a carrier including a plurality of layers of conductive material disposed on the device side of the die, a first one of the layers of conductive materials being formed on the insulating layer and patterned into traces at least a portion of which are connected to respective contact points on the die. A method including disposing a die on a sacrificial substrate with a device side of the die opposite the sacrificial substrate; disposing a mold on the sacrificial substrate around; introducing an insulating material into a chase of the mold; removing the mold; forming a carrier on the insulating material adjacent a device side of a die; and separating the die and the carrier from the sacrificial substrate.

In a disclosed embodiment, a method for tiling selected vias in a semiconductor device having a plurality of vias comprises generating a layout database for the semiconductor device; creating zones around the plurality of vias; measuring density of covering metal in each zone; selecting a low density zone as being a zone that has a metal density less than a threshold metal density; and adding at least one tiling feature on a metal layer above the plurality of vias in the low density zone so that metal density of the low density zone increases to at least the same as the threshold metal density.

An embodiment is an integrated circuit structure including a first die attached to a second die by a first connector. The first connector includes a solder joint portion between a first nickel-containing layer and a second nickel-containing layer, a first copper-containing layer between the first nickel-containing layer and the solder joint portion, and a second copper-containing layer between the second nickel-containing layer and the solder joint portion.

A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).

In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

A method for manufacturing a light-emitting device includes a step of forming an etching resistant protection layer on a substrate provided with an organic planarizing layer, a step of forming a plurality of electrodes on the etching resistant protection layer, a step of forming an organic compound layer on the substrate provided with the plurality of electrodes, a step of forming a resist layer on the organic compound layer formed on parts of electrodes among the plurality of electrodes using a photolithographic method, and a step of removing the organic compound layer in a region not covered with the resist layer by dry etching, wherein an entire surface of the organic planarizing layer on the substrate on which steps up to the step of forming the plurality of electrodes have been performed is covered with at least one of the etching resistant protection layer and the electrode.

A method of making a microelectronic package includes forming a dielectric encapsulation layer on an in-process unit having a substrate having a first surface and a second surface remote therefrom. A microelectronic element is mounted to the first surface of the substrate, and a plurality of conductive elements exposed at the first surface, at least some of which are electrically connected to the microelectronic element. Wire bonds have bases joined to the conductive elements and end surfaces remote from the bases and define an edge surface extending away between the base and the end surface. The encapsulation layer is formed to at least partially cover the first surface and portions of the wire bonds with unencapsulated portions of the wire bonds being defined by at least one of the end surface or a portion of the edge surface that is uncovered thereby.

A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of the insulator layer from the III-N material layer, and an electrode defining layer on an opposite side of the etch stop layer from the insulator layer. A recess is formed in the electrode defining layer. An electrode is formed in the recess. The insulator can have a precisely controlled thickness, particularly between the electrode and III-N material layer.

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Methods for fabricating integrated circuits include fabricating a logic device on a substrate, forming an intermediate semiconductor substrate on a surface of the logic device, and fabricating a capacitor-less memory cell on the intermediate semiconductor substrate. Integrated circuits with capacitor-less memory cells formed on a surface of a logic device are also disclosed, as are multi-core microprocessors including such integrated circuits.

A method for producing a Ga-containing group III nitride semiconductor having reduced threading dislocation is disclosed. A buffer layer in a polycrystal, amorphous or polycrystal/amorphous mixed state, comprising AlGaN is formed on a substrate. The substrate having the buffer layer formed thereon is heat-treated at a temperature higher than a temperature at which a single crystal of a Ga-containing group III nitride semiconductor grows on the buffer layer and at a temperature that the Ga-containing group III nitride semiconductor does not grow, to reduce crystal nucleus density of the buffer layer as compared with the density before the heat treatment. After the heat treatment, the temperature of the substrate is decreased to a temperature that the Ga-containing group III nitride semiconductor grows, the temperature is maintained, and the Ga-containing group III nitride semiconductor is grown on the buffer layer.

A microelectronic assembly and method of making, which includes a first microelectronic element (including a substrate with first and second opposing surfaces, a semiconductor device, and conductive pads at the first surface which are electrically coupled to the semiconductor device) and a second microelectronic element (including a handler with first and second opposing surfaces, a second semiconductor device, and conductive pads at the handler first surface which are electrically coupled to the second semiconductor device). The first and second microelectronic elements are integrated such that the second surfaces face each other. The first microelectronic element includes conductive elements each extending from one of its conductive pads, through the substrate to the second surface. The second microelectronic element includes conductive elements each extending between the handler first and second surfaces. The conductive elements of the first microelectronics element are electrically coupled to the conductive elements of the second microelectronics element.

When forming sophisticated semiconductor-based gate electrode structures of transistors, the pre-doping of one type of gate electrode structure may be accomplished after the actual patterning of the electrode material by using an appropriate mask or fill material for covering the active regions and using a lithography mask. In this manner, a high degree of flexibility is provided with respect to selecting an appropriate patterning regime, while at the same time a uniform and superior cross-sectional shape for any type of gate electrode structure is obtained.

A protective film to a polarizer including a cellulose acylate and satisfying the following requirement (1) or (2): (1): The surface of the film has a pH of from 3.0 to 4.5.(2): The surface of the film has a pH of more than 4.5 and at most 6.0, and the film has a moisture permeability of at least 2800 g/m2·day.

The present invention provides an electroconductive sheet and a touch panel which do not impair visibility in a vicinity of an electrode terminal in a sensing region. In an electroconductive sheet which has an electrode pattern constructed of a metal thin wire and an electrode terminal that is electrically connected to an end of the electrode pattern, a transmittance of the electrode pattern is 83% or more, and when the transmittance of the electrode pattern is represented by a %, a transmittance of the electrode terminal is controlled to be (a-20)% or more and (a-3)% or less.

A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition functions as a hygroscopic film at a portion extremely close to the light-emitting element, so that moisture or water vapor remaining in the light-emitting device or entering from the outside can be effectively adsorbed. Thus, reduction in performance of the light-emitting device due to moisture or water vapor can be effectively suppressed.

In a semiconductor device, where, with respect to a parasitic resistor in a current mirror circuit, a compensation resistor for compensating the parasitic resistor is provided in the current mirror circuit, the current mirror circuit includes at least two thin film transistors. The thin film transistors each have an island-shaped semiconductor film having a channel formation region and source or drain regions, a gate insulating film, a gate electrode, and source or drain electrodes, and the compensation resistor compensates the parasitic resistor of any one of the gate electrode, the source electrode, and the drain electrode. In addition, each compensation resistor has a conductive layer containing the same material as the gate electrode, the source or drain electrodes, or the source or drain regions.