Forty years ago, Mount St. Helens in southwestern Washington was just days away from a devastating eruption. When the mountain finally did blow, after weeks of frequent quakes and ash belching, on the morning of May 18, 1980, it caused the deadliest and most economically destructive volcanic event in U.S. history.…

Virtually every musician starts out trying to copy their heroes.…

The chafing.…

A spiking neuron-based working memory device is provided. The spiking neuron-based working memory device includes an input interface configured to convert input spike signals into respective burst signals having predetermined forms, and output a sequence of the burst signals, the burst signals corresponding to the input spike signals in a burst structure, and two or more memory elements (MEs) configured to sequentially store features respectively corresponding to the outputted sequence of the burst signals, each of the MEs continuously outputting spike signals respectively corresponding to the stored features.

Disclosed are a ferrocene-containing conductive polymer, an organic memory device using the conductive polymer and a method for fabricating the organic memory device. The conductive polymer may include a fluorenyl repeating unit, a thienyl repeating unit and a diarylferrocenyl repeating unit. The organic memory device may possess the advantages of rapid switching time, decreased operating voltage, decreased fabrication costs and increased reliability. Based on these advantages, the organic memory device may be used as a highly integrated, large-capacity memory device.

Shape memory and pseudoelastic martensitic behavior is enabled by a structure in which there is provided a crystalline ceramic material that is capable of undergoing a reversible martensitic transformation and forming martensitic domains, during such martensitic transformation, that have an elongated domain length. The ceramic material is configured as a ceramic material structure including a structural feature that is smaller than the elongated domain length of the ceramic material.

A perpendicular spin-transfer torque magnetic random access memory (STTMRAM) element includes a fixed layer having a magnetization that is substantially fixed in one direction and a barrier layer formed on top of the fixed layer and a free layer. The free layer has a number of alternating laminates, each laminate being made of a magnetic layer and an insulating layer. The magnetic layer is switchable and formed on top of the barrier layer. The free layer is capable of switching its magnetization to a parallel or an anti-parallel state relative to the magnetization of the fixed layer during a write operation when bidirectional electric current is applied across the STTMRAM element. Magnetic layers of the laminates are ferromagnetically coupled to switch together as a single domain during the write operation and the magnetization of the fixed and free layers and the magnetic layers of the laminates have perpendicular anisotropy.

A nano-ionic memory device is provided. The memory device includes a substrate, a chemically inactive lower electrode provided on the substrate, a solid electrolyte layer provided on the lower electrode and including a silver (Ag)-doped telluride (Te)-based nano-material, and an oxidizable upper electrode provided on the electrolyte layer.

A memory device includes a semiconductor channel, a tunnel dielectric layer located over the semiconductor channel, a first charge trap including a plurality of electrically conductive nanodots located over the tunnel dielectric layer, dielectric separation layer located over the nanodots, a second charge trap including a continuous metal layer located over the separation layer, a blocking dielectric located over the second charge trap, and a control gate located over the blocking dielectric.

Methods using a sequence of externally generated magnetic fields to initialize the magnetization directions of each of the layers in perpendicular MTJ MRAM elements for data and reference bits when the required magnetization directions are anti-parallel are described. The coercivity of the fixed pinned and reference layers can be made unequal so that one of them can be switched by a magnetic field that will reliably leave the other one unswitched. Embodiments of the invention utilize the different effective coercivity fields of the pinned, reference and free layers to selectively switch the magnetization directions using a sequence of magnetic fields of decreasing strength. Optionally the chip or wafer can be heated to reduce the required field magnitude. It is possible that the first magnetic field in the sequence can be applied during an annealing step in the MRAM manufacture process.

An approach for introspection of a software component and generation of a conditional memory dump, a computing device executing an introspection program with respect to the software component is provided. An introspection system comprises one or more conditions for generating the conditional memory dump based on operations of the software component. In one aspect, a computing device detects, through an introspection program, whether the one or more conditions are satisfied by the software component based on information in an introspection analyzer of the introspection program. In addition, the computing device indicates, through the introspection program, if the one or more conditions are satisfied by the software component. In another aspect, responsive to the indication, the computing device generates the conditional memory dump through the introspection program.

Memory devices adapted to repair single unprogrammable cells during a program operation, and to repair columns containing unprogrammable cells during a subsequent erase operation. Programming of such memory devices includes determining that a single cell is unprogrammable and repairing the single cell, and repairing a column containing the single cell responsive to a subsequent erase operation.

A double data rate memory physical interface having self checking loopback logic on-chip is disclosed. Disposed on the chip is a first linear feedback shift register, which is capable of generating a set of test data values that comprise at least two data bits. Also disposed on the chip is a second linear feedback shift register. The second linear feedback shift register is capable of generating a set of expected data values that match the test data values. Further, an internal loopback error check element is disposed on the chip. The internal loopback error check element is used to compare the set of expected data values with the set of test data values.

An apparatus is equipped with a storage device including an error correction circuit. The apparatus performs a test of the storage device according to a predetermined testing procedure, and records a time-point at which error correction of the storage device has been performed by the error correction circuit during performance of the test. The apparatus determines, with predetermined accuracy, a first position within the storage device on which the error correction has been performed, based on a test speed at which the test is performed, a time-period from the time-point to current time, and a second position within the storage device on which the test is being performed at the current time. Then, the apparatus performs the test predetermined times on a range included in the storage device and including the first position, according to a testing procedure that has been used at the time-point.

According to one embodiment, a memory controller includes: a first flash encoding unit that performs flash encoding on user data according to a first scheme to generate user data flash codes; an encoding unit that performs an error correction encoding process on the user data flash codes to generate parities; a second flash encoding unit that performs flash encoding on the parities according to a second scheme to generate parity flash codes; and a memory I/F that writes the user data flash codes and the parity flash codes to the nonvolatile memory.

A method of operating a memory controller to control a memory device includes reading a read vector from the memory device and correcting one or more errors in the read vector, where a power consumed at the correcting is varied according to the number of errors in the read vector.

A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory that includes a three-dimensional (3D) memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. The method includes comparing the read threshold voltage and the error metric to one or more criteria corresponding to a corrupting event.

A memory device includes a memory chip that stores data, and an external controller that controls the memory chip. The memory chip includes multiple memory cells configured to store data of two or more bits; and an internal controller that executes a program operation for page data including a lower and an upper page program operation, and executes a read operation for page data including a lower and an upper page read operation. The external controller includes an error correction unit that performs error correction encoding on data to be programmed into the memory cell array and performs error correction decoding on data. The internal controller outputs the read page data from the memory cell array to the external controller, regardless of whether the upper page program operation is complete or not, in the upper page read operation.

Example embodiments relate to a bad area managing method of a nonvolatile memory device. The nonvolatile memory device may include a plurality of memory blocks and each block may contain memory layers stacked on a substrate. According to example embodiments, a method includes accessing one of the memory blocks, judging whether the accessed memory block includes at least one memory layer containing a bad memory cell. If a bad memory cell is detected, the method may further include configuring the memory device to treat the at least one memory layer of the accessed memory block as a bad area.

Memory system operations are extended for a data processor by DMA, cache, or memory controller to include a DMA descriptor, including a set of operations and parameters for the operations, which provides for data compression and decompression during or in conjunction with processes for moving data between memory elements of the memory system. The set of operations can be configured to use the parameters and perform the operations of the DMA, cache, or memory controller. The DMA, cache, or memory controller can support moves between memory having a first access latency, such as memory integrated on the same chip as a processor core, and memory having a second access latency that is longer than the first access latency, such as memory on a different integrated circuit than the processor core.

The disclosure is related systems and methods for using operation durations of a data storage medium to generate random numbers. In one embodiment, a device may comprise a random number generator circuit configured to store a value representing a duration of an operation on the data storage medium, and generate a random number based on the value. Another embodiment may be a method comprising recording durations of access operations to a data storage medium, and generating a random number based on the durations.

A system (200) and a method (100) of operating a computing device to perform memoization are disclosed. The method includes determining whether a result of a function is stored in a cache and, if so, retrieving the result from the cache and, if not, calculating the result and storing it in the cache. The method (100) includes transforming (104) by the computing device at least one selected from the input parameters and the output parameters of the function, the transforming being based on an analysis of the function and its input arguments to establish whether or not there is a possible relationship reflecting redundancy among the input parameters and output parameters of the function. The transforming may include at least one of: use of symmetry, scaling, linear shift, interchanging of variables, inversion, polynomial and/or trigonometric transformations, spectral or logical transformations, fuzzy transformations, and systematic arrangement of parameters.

A variety of biomedical devices are provided which include thiol-ene or thiol-yne shape memory polymers. The biomedical devices of the invention are capable of exhibiting shape memory behavior at physiological temperatures and may be used in surgical procedures. Methods of making the devices of the invention are also provided.

In one exemplary embodiment, a computer-implemented method includes receiving, at a remote direct memory access (RDMA) device, a plurality of RDMA requests referencing a plurality of virtual pages. Data transfers are scheduled for the plurality of virtual pages, wherein the scheduling occurs at the RDMA device. The number of the virtual pages that are currently pinned is limited for the RDMA requests based on a predetermined pinned page limit.

A dispersed storage network memory includes a pool of storage nodes, where the pool of storage nodes stores a multitude of encoded data files. A storage node obtains and analyzes data access response performance data for each of the storage nodes to produce a modified data access response plan that includes identity of an undesired performing storage node and an alternative data access response for the undesired performing storage node. The storage nodes receive corresponding portions of a data access request for at least a portion of one of the multitude of encoded data files. The undesired performing storage node or another storage node processes one of the corresponding portions of the data access request in accordance with the alternative data access response.

A semiconductor memory device includes a selection signal generation unit configured to generate a plurality of selection signals that are sequentially activated, a path selection unit configured to select a transmission path of sequentially input information data in response to the plurality of selection signals, a plurality of first storage units, each configured to have a first storage completion time and store an output signal of the path selection unit, and a plurality of second storage units, each configured to have a second storage completion time, which is longer than the first storage completion time, and store a respective output signal of the plurality of first storage units.

A memory system includes a CPU that communicates commands and addresses to a main-memory module. The module includes a buffer circuit that relays commands and data between the CPU and the main memory. The memory module additionally includes an embedded processor that shares access to main memory in support of peripheral functionality, such as graphics processing, for improved overall system performance. The buffer circuit facilitates the communication of instructions and data between CPU and the peripheral processor in a manner that minimizes or eliminates the need to modify CPU, and consequently reduces practical barriers to the adoption of main-memory modules with integrated processing power.

Apparatuses and methods of calibrating a memory interface are described. Calibrating a memory interface can include loading and outputting units of a first data pattern into and from at least a portion of a register to generate a first read capture window. Units of a second data pattern can be loaded into and output from at least the portion of the register to generate a second read capture window. One of the first read capture window and the second read capture window can be selected and a data capture point for the memory interface can be calibrated according to the selected read capture window.

A method for efficient dispatch/completion of a work element within a multi-node data processing system. The method comprises: selecting specific processing units from among the processing nodes to complete execution of a work element that has multiple individual work items that may be independently executed by different ones of the processing units; generating an allocated processor unit (APU) bit mask that identifies at least one of the processing units that has been selected; placing the work element in a first entry of a global command queue (GCQ); associating the APU mask with the work element in the GCQ; and responsive to receipt at the GCQ of work requests from each of the multiple processing nodes or the processing units, enabling only the selected specific ones of the processing nodes or the processing units to be able to retrieve work from the work element in the GCQ.

A system and method for detecting, filtering, prioritizing and reporting shared memory hazards are disclosed. The method includes, for a unit of hardware operating on a block of threads, mapping a plurality of shared memory locations assigned to the unit to a tracking table. The tracking table comprises initialization information for each shared memory location. The method also includes, for an instruction of a program within a barrier region, identifying a potential conflict by identifying a second access to a location in shared memory within a block of threads executed by the hardware unit. First information associated with a first access and second information associated with the second access to the location is determined. Filter criteria is applied to the first and second information to determine whether the instruction causes a reportable hazard. The instruction is reported when it causes the reportable hazard.

A system for protecting an electronic device against malware includes a memory, an operating system configured to execute on the electronic device, and a below-operating-system security agent. The below-operating-system security agent is configured to trap an attempted access of a resource of the electronic device, access one or more security rules to determine whether the attempted access is indicative of malware, and operate at a level below all of the operating systems of the electronic device accessing the memory. The attempted access includes attempting to write instructions to the memory and attempting to execute the instructions.

The systems and methods described herein may be used to implement a shared dynamic-sized data structure using hardware transactional memory to simplify and/or improve memory management of the data structure. An application (or thread thereof) may indicate (or register) the intended use of an element of the data structure and may initialize the value of the data structure element. Thereafter, another thread or application may use hardware transactions to access the data structure element while confirming that the data structure element is still part of the dynamic data structure and/or that memory allocated to the data structure element has not been freed. Various indicators may be used determine whether memory allocated to the element can be freed.

Techniques are described for decoupling fetching of an instruction stored in a main program memory from earliest execution of the instruction. An indirect execution method and program instructions to support such execution are addressed. In addition, an improved indirect deferred execution processor (DXP) VLIW architecture is described which supports a scalable array of memory centric processor elements that do not require local load and store units.

A processor determines whether a first program is under execution when a second program is executed, and changes a setting of a memory management unit based on access prohibition information so that a fault occurs when the second program makes an access to a memory when the first program is under execution. Then, the processor determines whether an access from the second program to a memory area used by the first program is permitted based on memory restriction information when the fault occurs while the first program and the second program are under execution, and changes the setting of the memory management unit so that the fault does not occur when the access to the memory area is permitted.

A command engine for an active memory receives high level tasks from a host and generates corresponding sets of either DCU commands to a DRAM control unit or ACU commands to a processing array control unit. The DCU commands include memory addresses, which are also generated by the command engine, and the ACU command include instruction memory addresses corresponding to an address in an array control unit where processing array instructions are stored.

A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

An array of a plurality of processing elements (PEs) are in a data packet-switched network interconnecting the PEs and memory to enable any of the PEs to access the memory. The network connects the PEs and their local memories to a common controller. The common controller may include a shared load/store (SLS) unit and an array control unit. A shared read may be addressed to an external device via the common controller. The SLS unit can continue activity as if a normal shared read operation has taken place, except that the transactions that have been sent externally may take more cycles to complete than the local shared reads. Hence, a number of transaction-enabled flags may not have been deactivated even though there is no more bus activity. The SLS unit can use this state to indicate to the array control unit that a thread switch may now take place.

To freely establish a peripheral equipment selection operating environment of excellent operability which can remarkably reduce an operation burden which is applied until construction information of selectable peripheral equipment can be confirmed and can easily confirm the construction information of the selectable peripheral equipment by everyone by a simple operating instruction, a CPU obtains construction information of a printer that is being selected and default setting on the basis of a selection instructing state relative to a selectable printer candidate on a network and allows them to be caption-displayed at a position near the position indicated by a cursor on a printer selection picture plane displayed on a CRT.

A memory storage apparatus, a memory controller and method for transmitting and identifying data streams are provided. The memory controller passes at least a portion of a data stream received from a host system to a smart card chip of the memory storage apparatus. Then, the host system accurately receives a response message from the smart card chip by executing a plurality of read commands. The memory controller is capable of adding a first verification code to a response data stream sent to the host system, and is capable of adding a write token to each of data segments of the response data stream. The host system confirms the accuracy of the response data stream by verifying the first verification code or by verifying the write token of each of the data segments.

A flash memory file system including a plurality of flash modules. Each of the plurality of flash modules includes a respective cache memory, a respective flash memory, and a respective flash controller in communication with the respective cache memory and the respective flash memory. A first flash module of the plurality of flash modules is configured to receive a file lookup message including a path name for file data stored on a second flash module of the plurality of flash modules. A third flash module of the plurality of flash modules is configured to select the second flash module based on the path name and a directory table, and generate a file metadata message responsive to the file lookup message. The file metadata message identifies the second flash module as containing the file data.

Systems, processors, and methods for keeping uncacheable data coherent. A processor includes a multi-level cache hierarchy, and uncacheable load memory operations can be cached at any level of the cache hierarchy. If an uncacheable load misses in the L2 cache, then allocation of the uncacheable load will be restricted to a subset of the ways of the L2 cache. If an uncacheable store memory operation hits in the L1 cache, then the hit cache line can be updated with the data from the memory operation. If the uncacheable store misses in the L1 cache, then the uncacheable store is sent to a core interface unit. Multiple contiguous store misses are merged into larger blocks of data in the core interface unit before being sent to the L2 cache.

A heterogeneous memory system includes a main memory arrangement, a first-level cache, and a memory management unit (MMU). The first-level cache includes an SRAM arrangement and a DRAM arrangement. The MMU is configured and arranged to read first data from the main memory arrangement in response to a stored first value associated with the first data and indicative of a start time. The MMU selects one of the SRAM arrangement or the DRAM arrangement for storage of the first data and stores the first data in the selected one of the SRAM arrangement or DRAM arrangement. The MMU reads second data from one of the SRAM arrangement or DRAM arrangement and writes the data to the main memory arrangement in response to a stored second value associated with the second data and indicative of a duration.

Techniques for handling version information using a copy engine. In one embodiment, an apparatus comprises a copy engine configured to perform one or more operations associated with a block memory operation in response to a command. Examples of block memory operations may include copy, clear, move, and/or compress operations. In one embodiment, the copy engine is configured to handle version information associated with the block memory operation based on the command. The one or more operations may include operating on data in a cache and/or modifying entries in a memory. In one embodiment, the copy engine is configured to compare version information in the command with stored version information. The copy engine may overwrite or preserve version information based on the command. The copy engine may be a coprocessing element. The copy engine may be configured to maintain coherency with other copy engines and/or processing elements.

In a computer system that includes multiple nodes and multiple logical partitions, a dynamic partition manager computes current memory affinity and potential memory affinity to help determine whether a reallocation of resources between nodes may improve memory affinity for a logical partition or for the computer system. If so, the reallocation of resources is performed so memory affinity for the logical partition or computer system is improved. Memory affinity is computed relative to the physical layout of the resources according to a hardware domain hierarchy that includes a plurality of primary domains and a plurality of secondary domains.

A memory system includes a volatile first storing unit, a nonvolatile second storing unit, and a controller. The controller performs data transfer, stores management information including a storage position of the data stored in the second storing unit into the first storing unit, and performs data management while updating the management information. The second storing unit has a management information storage area for storing management information storage information including management information in a latest state and a storage position of the management information. The storage position information is read by the controller during a startup operation of the memory system and includes a second pointer indicating a storage position of management information in a latest state in the management information storage area and a first pointer indicating a storage position of the second pointer. The first pointer is stored in a fixed area in the second storing unit and the second pointer is stored in an area excluding the fixed area in the second storing unit.

An abstraction for storage class memory is provided that hides the details of the implementation of storage class memory from a program, and provides a standard channel programming interface for performing certain actions, such as controlling movement of data between main storage and storage class memory or managing storage class memory.

A method and computer-readable storage media are provided for rearranging data in physical memory units. In one embodiment, a method may include monitoring utilization counters. The method may further include, comparing the utilization counters for a match with an instance in a first table containing one or more instances when data may be rearranged in the physical memory units. The table may further include where the data should be relocated by a rearrangement. The method may also include, continuing to monitor the utilization counters if a match is not found with an instance in the first table. The method may further include, rearranging the data in the physical memory units if a match between the utilization counters and an instance in the first table is found.

The invention pertains to a memory management unit for a microprocessor system, the memory management unit being connected or connectable to at least one processor core of the microprocessor system and being connected or connectable to a physical memory of the microprocessor system. The memory management unit is adapted to selectively operate in a hypervisor mode or in a supervisor mode, the hypervisor mode and the supervisor mode having different privilege levels of access to hardware The memory management unit comprises a first register table indicating physical address information for mapping at least one logical physical address and at least one actual physical address onto each other; a second register table indicating an allowed address range of physical addresses accessible to a process running in or under supervisor mode; wherein the memory management unit is adapted to prevent write access to the second register table by a process not in hypervisor mode. The memory management unit is further adapted to allow write access to the first register table of a process running in or under supervisor mode to reconfigure the physical address information indicated in the first register table with memory mapping information relating to at least one physical address, if the at least one physical address is in the allowed address range, and to prevent write access to the first register table of the process running in or under supervisor mode if the at least one physical address is not in the allowed address range. The invention also pertains to a microprocessor system and a method for managing memory.

Apparatuses and methods for providing data are disclosed. An example apparatus includes a plurality of memories coupled to a data bus. The memories provide data to the data bus responsive, at least in part, to a first address. The plurality of memories further provide at least a portion of the data corresponding to the first address to the data bus during a sense operation for a second address provided to the plurality of memories after the first address. Each of the plurality of memories provides data to the data bus corresponding to the first address at different times. Moreover, a plurality of memories may provide at least 2N bits of data to the data bus responsive, at least in part, to an address, each of the plurality of memories provide N bits of data to the data bus at different times.

A data processing entity that includes a mass memory with a plurality of memory locations for storing memory blocks. Each of a plurality of software images includes a plurality of memory blocks with corresponding image addresses within the software image. The memory blocks of software images stored in boot locations of a current software image are relocated. The boot blocks of the current software image are stored into the corresponding boot locations. The data processing entity is booted from the boot blocks of the current software image in the corresponding boot locations, thereby loading the access function. Each request to access a selected memory block of the current software image is served by the access function, with the access function accessing the selected memory block in the associated memory location provided by the control structure.