A golf hole cup setter for inserting a cylindrical golf hole cup into a golf hole so that its longitudinal axis is in vertical alignment. The cup setter has a base plate having an upper surface and a lower surface. A cup insertion member extends downwardly from the lower surface of the base plate, and is configured to contact the upper rim of the cup. A level is attached to the base plate and is positioned to allow a user to step on the base plate without interference during cup insertion, and to determine whether the longitudinal axis of the golf hole cup inserted into the golf hole by the cup setter is in vertical alignment.

An agricultural system includes an agricultural row unit movable on a field between a first soil condition and a second soil condition, the first soil condition having a different soil hardness than the second soil condition. A down-pressure actuator applies an initial first pressure associated with the first soil condition. A soil-hardness sensing device is positioned at a distance D forward of the row unit and outputs a soil-hardness change signal when detecting a change from the first soil condition to the second soil condition. At least one memory device stores instructions that, when executed by at least one processor, cause the down-pressure actuator to change, in response to receiving the soil-hardness change signal, the initial first pressure to a different second pressure when the row unit encounters the second soil condition.

A coulter assembly for an agricultural implement. The coulter assembly includes a support structure and a disc blade rotatably mounted to the support structure. The coulter assembly also includes a spring assembly coupled to the support structure and configured to urge the disc blade into soil. The spring assembly includes a variable rate spring.

An apparatus for servicing roadways includes a frame configured to be secured to a prime mover. The apparatus further includes a grinding drum rotatably supported upon the frame. The apparatus still further includes a driving system supported upon the frame and configured to rotationally drive the grinding drum.

A hitch on a vehicle is raised and lowered by a hydraulic actuator controlled by an electrically operated valve. A control system receives a command that indicates a designated velocity and uses the command to operate the valve. Based on a reference external force exerted on the hitch, the control system is configured with relationships for converting a plurality of command values to corresponding electric current levels for operating the valve. The control system compensates for effects due to differences between the actual force acting on the hitch and the reference external force. Velocity feedback adjusts the electric current level applied to the valve. The passive load force control provides a predictor of the hitch load force to eliminate overshoot/undershoot of hitch motion. During hitch motion, the velocity feedback also compensates for effects due to load and hitch geometry changes that occur.

Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied.

A semiconductor light-emitting device includes a lamination of semiconductor layers including a first layer of a first conductivity type, an active layer, and a second layer of a second conductivity type; a transparent conductive film formed on a principal surface of the lamination and having an opening; a pad electrode formed on part the opening; and a wiring electrode connected with the pad electrode, formed on another part of the opening while partially overlapping the transparent conductive film; wherein contact resistance between the transparent conductive film and the lamination is larger than contact resistance between the wiring electrode and the lamination. Field concentration at the wiring electrode upon application of high voltage is mitigated by the overlapping transparent conductive film.

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface containing an inorganic filler in an amount within a range of 70% by weight to 95% by weight based on the whole of the film for flip chip type semiconductor back surface.

An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.

The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.

According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.

A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer. The substrate intermediate layer and the device intermediate layer comprise a distribution in their compositions along a thickness coordinate.

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.

An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

An embodiment of the present invention provides a TFT array substrate including: a base substrate (1) and thin film transistors. The thin film transistor includes a gate electrode (2), a semiconductor layer (5), a semiconductor protective layer, a source electrode (8) and a drain electrode (9). The semiconductor protective layer is disposed adjacent to the semiconductor layer (5) and includes a composite lamination structure, which includes a protective layer formed of an insulating material capable of preventing de-oxygen of the semiconductor layer (5) and an insulating layer formed of an insulating material to be etched more easily.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

A transistor device includes a compound semiconductor body having a first surface and a two-dimensional charge carrier gas disposed below the first surface in the compound semiconductor body. The transistor device further includes a source in contact with the two-dimensional charge carrier gas and a drain spaced apart from the source and in contact with the two-dimensional charge carrier gas. A first passivation layer is in contact with the first surface of the compound semiconductor body, and a second passivation layer is disposed on the first passivation layer. The second passivation layer has a different etch rate selectivity than the first passivation layer. A gate extends through the second passivation layer into the first passivation layer.

A seat cushion airbag apparatus is applied to a vehicle seat including a seat unit having a seat cushion supported, from a lower side thereof, by a supporting portion of a seat frame, and an air blowing duct having a blow-out port below the seat cushion, wherein a conditioning air flowing through the air blowing duct is blown out upward from the blow-out port. An inflator is disposed at a location, which is spaced from the blow-out port in a front and rear direction of a vehicle, and an airbag is inflated between the supporting portion and the seat cushion by an inflation gas supplied from the inflator so that a seat face of the seat unit is raised to prevent a subject to be restrained on the seat unit from being moved forward.

A partition for separating front and rear occupant areas of a vehicle comprises a frame and multiple panel members. The frame is attached to the vehicle and has an upper lateral member, respective angled side tubular members and a window. The multiple panel members are configured to fit vertically between the window and a floor pan and horizontally between first and second sides. The multiple panel members comprise a first panel member for positioning adjacent the first side, a second panel member for positioning adjacent the second side and a center section laterally adjacent and separating the first and second panel members. The center section protrudes rearwardly relative to the first panel member and the second panel member. The second panel member is recessed forwardly of the first panel member and forwardly of the center section to increase space available in a rear seat aligned with the second panel member.

A device for use in a vehicle steering system, said device comprising at least one actuator affixed to a wheel linkage of at least one wheel of said vehicle steering system. The actuator comprises a rotation assembly engagable with a first wheel linkage segment, an electric motor for actuating movement of the rotation assembly via a gear box and one or more sensors integrally contained in the actuator for sensing one or more parameters selected from the group consisting of force, speed, turns and rotation. Rotation of the rotation assembly actuates linear movement of said first wheel linkage segment into and out of said actuator to thereby adjust one or more wheel parameters of said at least one wheel, and wherein said one or more sensors provide real time data to an actuator control unit integral to said actuator to self-adjust rotational parameters of said rotation assembly.

A skateboard is provided having a transparent deck. First and second wheel assemblies are attached to the front and rear portion of the skateboard, respectively. The wheel assemblies each include a truck and two wheels. Each respective wheel comprises a wheel covering having a translucent surface and a wheel interior defined by a rotational axis and the wheel covering. The wheel interior houses a wheel generator configured to generate electricity and light emitting devices electrically coupled to the wheel generator that emit light when the wheel generator generates electricity. The skateboard also has a graphics layer on the top surface of the deck that is illuminated by the light emitting devices. The graphics layer comprises an adhesive surface having a graphic printed thereon and an adhesive applied thereon. The adhesive surface is adhesively affixed to the top or bottom surface of the transparent or translucent plastic deck.

A reconfigurable fixed position suspension and support structure attached to the trailer body using a locking device consisting of pins, bolts and/or other fastening devices. The support structure has a removable locking device that when attached to the support structure locks the support structure and suspension into a fixed position relative to the trailer body. When the trailer is not in operation, the locking device can be removed allowing the suspension group to be reconfigured, and each suspension to be repositioned relative to the trailer body. The removable locking device is then reattached to the suspension support structure locking the support structure and suspension into a new fixed position relative to the trailer body.

A bicycle seatpost includes a first part and a second part. A curvature radius of the first part is r1, and an arc length of the first part is equal to or greater than πr1 and smaller than 2πr1, the first part is set toward a head of a bicycle. The second part is connected to the first part, wherein a curvature radius of the second part is greater than the curvature radius of the first part, the second part is set toward an end of the bicycle.

A ski system includes a ski, a heel binding provided on an upper surface of the ski, a toe binding mount provided on the upper surface of the ski forward of the heel binding, a toe binding releasably mounted to the toe binding mount, and a quick-release locking mechanism for locking the toe binding to the toe binding mount. The quick-release locking mechanism is configured for release by hand.

An airbag system for protecting rear seat occupants in dynamic side impacts using an improved packaging arrangement is provided. The system includes seat base and seat back frames. The seat back frame is movable between an upright position and a reclined position. The system further includes a unified airbag having a pelvic portion and a thoracic portion. The pelvic portion is positioned adjacent to the seat base frame. The thoracic portion is positioned adjacent to the seat back frame. The unified airbag is attached to the seat base frame by fixed anchors and to the seat back frame by a movable anchor. A grooved track is provided for attachment of the movable anchor. The airbag may be a strip shape or a triangular shape. One or more tethers may be attached to the unified airbag.

Interior panels having integrated airbag doors for motor vehicles and methods for making such interior panels are provided herein. In one example, an interior panel comprises a substrate having outer and inner surfaces and an opening extending therethrough. A multi-shot injection molded airbag chute-door assembly is mounted to the substrate and comprises a chute wall that at least partially surrounds an interior space. A door flap portion is pivotally connected to the chute wall and at least partially covers the opening. A perimeter flange extends from the chute wall and has a flange section that overlies the outer surface of the substrate. A molded-in lip feature extends from the flange section and contacts the outer surface to form a seal between the flange section and the substrate. A skin covering extends over the substrate and a foam is disposed between the skin covering and the substrate.

A driver seat airbag system includes: an airbag that is housed in a pad section of a steering wheel, receives a supply of gas for inflation during a collision of a vehicle, and is inflated and deployed between the steering wheel and an occupant in a driver seat; and an inflator that generates the gas. The airbag includes an auxiliary inflated section that is inflated to a front of the vehicle in conjunction with inflation and deployment of the airbag, so as to enter a space between a rim and a spoke of the steering wheel.

A drill bit assembly for measuring reservoir formation properties comprises a bit head and a pin body, and an electrically insulated gap joint between two conductive parts of the drill bit assembly. The bit head has a cutting end and an opposite connecting end with an engagement section. The pin body comprises a connecting end with an engagement section. The pin connecting end is connected to the bit head connecting end such that the engagement sections overlap. The electrically insulating gap joint can fill a gap between the bit head and pin body engagement sections such that the bit head and pin body are mechanically connected together at the connecting ends but electrically separated. Alternatively or additionally, the pin body can have two pieces which are separated by an electrically insulating gap joint. An electrical conductor is electrically connected at a first end to the bit head and is communicable at a second end with an alternating current signal to transmit an alternating current into the bit head, thereby inducing an electric current into a reservoir formation adjacent the bit head. Electronic equipment includes measurement circuitry configured to determine the alternating current at the bit head, the alternating current being inversely proportional to a bit resistivity of the formation.

In some example embodiments, a system includes a drill string having a drill bit. The drill string extends through at least part of a well bore. The system also includes a first vibrational sensor, positioned on the drill bit to measure, at a first location on the drill string, an amplitude of one or more of an axial vibration and a lateral vibration. The system also includes a second vibrational sensor, positioned above the drill bit and on the drill string. The second vibration sensor is to measure, at a second location on the drill string, one or more of an axial vibration and a lateral vibration. The system includes a processor unit to determine a type of vibration based on a comparison of the amplitude at the first location to the amplitude at the second location, wherein the type of vibration is at least one of bit whirl of the drill bit and a while of a bottom hole assembly that is part of the drill string.

In one aspect, an apparatus for drilling a wellbore into an earth formation is disclosed, which apparatus, according to one embodiment, may include a drill string configured to be conveyed into a wellbore, wherein an annulus is formed between the drill string and a wellbore wall, a first flow device configured to circulate a first fluid from an annulus to a bore of the drill string, and a second flow device positioned downhole of the first flow device, the second flow device configured to circulate a second fluid from the bore of the drill string to the annulus.

A control and monitoring system controls and monitors a high power laser system for performing high power laser operations. The control and monitoring system is configured to perform high power laser operation on, and in, remote and difficult to access locations.