A method for quickly calibrating a memory interface circuit from time to time in conjunction with operation of a functional circuit is described. The method uses controlling the memory interface circuit with respect to read data capture for byte lanes, including controlling CAS latency compensation for the byte lanes. In the method control settings for controlling CAS latency compensation are determined and set according to a dynamic calibration procedure performed from time to time in conjunction with functional operation of a circuit system containing one or more memory devices connected to the memory interface circuit. In the method, determining and setting the control settings for controlling CAS latency compensation is performed independently and parallely in each of the byte lanes.

A bridge output circuit includes an output terminal, a high side transistor, a low side transistor, a high side driver for controlling a gate voltage of the high side transistor, a low side driver for controlling a gate voltage of the low side transistor, and a controller for controlling the high side and low side drivers. The low side driver includes a first current source, a second current source, and a first assist circuit. The controller is configured to control the turning-on and turning-off states of the first current source, the second current source and the first assist circuit.

There is provided an input buffer circuit having hysteresis characteristics. The input buffer circuit includes: a first operating unit performing a NOR operation on an input signal and a first signal; a second operating unit performing a NAND operation on the input signal and a second signal; and an inverting unit inverting outputs of the first and second operating units to generate a second signal and a first signal, respectively, wherein reference levels of the first and second operating units determining a high or low level of the input signal are set to be different.

Multi-threshold flash Null Convention Logic (NCL) includes one or more high threshold voltage transistors within a flash NCL gate to reduce power consumption due to current leakage by transistors of the NCL gate. High-threshold voltage transistors may be added and/or may be used in place of one or more lower voltage threshold transistors of the NCL gate. A high-Vt device is included in the pull-up path to reduce power when the flash NCL logic gate is in the null state.

Magnetoelectronic (ME) logic circuits and methods of operating the same are disclosed. Microsystems of different circuits made from different types of ME devices can be constructed and employed in applications such as sensors, smart dust, etc.

Techniques for reducing scan overhead in a scannable flop tray are described herein. In one embodiment, a scan circuit for a flop tray comprises a tri-state circuit configured to invert an input data signal and output the inverted data signal to an input of a flip-flop of the flop tray in a normal mode, and to block the data signal from the input of the flip-flop in a scan mode. The scan circuit also comprises a pass gate configured to pass a scan signal to the input of the flip-flop in the scan mode, and to block the scan signal from the input of the flip-flop in the normal mode.

Methods and circuits related to a driving circuit with zero current shutdown are disclosed. In one embodiment, a driving circuit with zero current shutdown can include: a linear regulating circuit that receives an input voltage source, and outputs an output voltage; a start-up circuit having a threshold voltage, the start-up circuit receiving an external enable signal; a first power switch receiving both the output voltage of the linear regulating circuit and the external enable signal, and that generates an internal enable signal, the internal enable signal being configured to drive a logic circuit; when the external enable signal is lower than a threshold voltage, the driving circuit is not effective; when the external enable signal is higher than the threshold voltage, the start-up circuit outputs a first current; and where the output voltage at the first output terminal is generated by the linear regulating circuit based on the first current.

A semiconductor integrated circuit includes: a main-interconnect to which supply voltage or reference voltage is applied; a plurality of sub-interconnects; a plurality of circuit cells configured to be connected to the plurality of sub-interconnects; a power supply switch cell configured to control, in accordance with an input control signal, connection and disconnection between the main-interconnect and the sub-interconnect to which a predetermined one of the circuit cells is connected, of the plurality of sub-interconnects; and an auxiliary interconnect configured to connect the plurality of sub-interconnects to each other.

A system and methods that generates a physical unclonable function (“PUF”) security key for an integrated circuit (“IC”) through use of equivalent resistance variations in the power distribution system (“PDS”) to mitigate the vulnerability of security keys to threats including cloning, misappropriation and unauthorized use.

An impedance tuning circuit includes a calibration unit and a post-processing unit. The calibration unit generates an initial pull-up code and an initial pull-down code by performing a calibration operation using an external resistor during an initial impedance tuning operation. The post-processing unit outputs the initial pull-up code and the initial pull-down code as a final pull-up code and a final pull-down code during the initial impedance tuning operation, and generates the final pull-up code and the final pull-down code by using the initial pull-up code and the initial pull-down code during a subsequent impedance tuning operation.

An isolator circuit capable of two-way electrical disconnection and a semiconductor device including the isolator circuit are provided. A data holding portion is provided in an isolator circuit without the need for additional provision of a data holding portion outside the isolator circuit, and data which is to be input to a logic circuit that is in an off state at this moment is stored in the data holding portion. The data holding portion may be formed using a transistor with small off-state current and a buffer. The buffer can include an inverter circuit and a clocked inverter circuit.

Disclosed herein is a device that includes first and second buffer circuits connected to a data terminal and a first control circuit controlling the first and second buffer circuits. The first control circuit receives n pairs of first and second internal data signals complementary to each other from 2n input signal lines and outputs a pair of third and fourth internal data signals complementary to each other to first and second output signal lines, where n is a natural number more than one. The first and second buffer circuits are controlled based on the third and fourth internal data signals such that one of the first and second buffer circuits turns on and the other of the first and second buffer circuits turns off.

There is provided a level shift circuit free from malfunction. The level shift circuit converts a signal of a first power supply voltage of a first supply terminal, which is supplied to an input terminal, into a signal of a second power supply voltage of a second supply terminal and outputs the converted signal to an output terminal. The level shift circuit has a control circuit that detects when the first power supply voltage reduces below a predetermined voltage. The voltage of the output terminal of the level shift circuit is fixed to the second power supply voltage or a ground voltage according to a detection signal of the control circuit.

There is disclosed a gate driver, a driving circuit, and a liquid crystal display (LCD), wherein the gate driver comprises input terminals for inputting a CPV signal, an OE signal, and an STV signal, and output terminals for outputting a CKV signal and a CKVB signal, and a processing circuit is connected between the input terminals and the output terminals for processing the CPV signal, the OE signal, and the STV signal such that a preset time interval is present between the falling edge of the CKV signal and the rising edge of the CKVB signal during one period of the CKV signal, or a preset time interval is present between the rising edge of the CKV signal and the falling edge of the CKVB signal during one period of the CKVB signal.

A method and apparatus that controls the clock of a digital circuit, and therefore power consumption, without substantially comprising performance is provided. The apparatus may include monitoring the utilization of a First in First Out (FIFO) buffer. For example in a systems and methods according to the invention, clock speed may be reduced when the FIFO is relatively empty and increased when the FIFO is relatively full. The clock speed may be controlled by a phase locked loop, a clock divider, a clock masking device or a combination of more than one of these methods. Power reduction may also be obtained by controlling the clocking of different stages of a pipelined device. One or more aspects of the inventions may be implemented in combination with other aspects of the invention to further reduce power use.

Embodiments described herein provide approaches for improving a standard cell connection for circuit routing. Specifically, provided is an IC device having a plurality of cells, a first metal layer (M1) pin coupled to a contact bar extending from a first cell of the plurality of cells, and a second metal layer (M2) wire coupled to the contact bar, wherein the contact bar extends across at least one power rail. By extending the contact bar into an open area between the plurality of cells to couple the M1 pin and the M2 wire, routing efficiency and chip scaling are improved.

The present invention relates to a method for downloading a binary configuration file in a programmable circuit implemented in a device. The device comprises at least one central processing unit, a plurality of connectors, and a programmable circuit enabling all or a part of the signals received by said connectors to be processed and transmitted to at least one other circuit of the device. The device analyzes the signals present on the connectors in order to define what other devices are connected and whether the connections are operational. Then, a configuration file is selected from among a set of configuration files according to the operational connections and is downloaded from a memory of the device into the programmable circuit. The invention also relates to a device having a component programmed according to the method previously described.

A method for configuring the placement of a plurality of storage cells on an integrated circuit includes grouping the plurality of storage cells into a plurality of words, where each of the plurality of words is protected by an error control mechanism. The method also includes placing each of the storage cells on the integrated circuit such that a distance between any two of the storage cells belonging to one of the plurality of words is greater than a minimum distance. The minimum distance is configured such that a probability of any of the plurality of words experiencing multiple radiation induced errors is below a threshold value.

A semiconductor integrated circuit including: a circuit block having an internal voltage line; an annular rail line forming a closed annular line around the circuit block and supplied with one of a power supply voltage and a reference voltage; and a plurality of switch blocks arranged around the circuit block along the annular rail line, the plurality of switch blocks each including a voltage line segment forming a part of the annular rail line and a switch for controlling connection and disconnection between the voltage line segment and the internal voltage line.

According to one embodiment, a first oscillator has an oscillation frequency that is changed depending on a temperature. A second oscillator has different temperature characteristics from the first oscillator. An on-chip heater heats the first oscillator and the second oscillator. A counter counts a first oscillation signal of the first oscillator. An ADPLL generates a third oscillation signal on the basis of a second oscillation signal of the second oscillator and corrects the frequency of the third oscillation signal on the basis of a count value of the counter.

A method in a circuit comprises providing a first clock by a resistor-capacitor (RC) oscillator; demodulating a plurality of input signals to form a plurality of demodulated input signals; discriminating frequency ranges of the plurality of demodulated input signals according to the first clock; determining whether a first predetermined number of consecutive demodulated input signals among the plurality of demodulated input signals fall into a first predetermined frequency range; triggering a crystal oscillator to provide a second clock to calibrate the first clock if the first predetermined number of consecutive input signals fall into the first predetermined frequency range.

The present disclosure relates to nanoresonator oscillators or NEMS (nanoelectromechanical system) oscillators. A circuit for measuring the oscillation frequency of a resonator is provided, comprising a first phase-locked feedback loop locking the frequency of a controlled oscillator at the resonant frequency of the resonator, this first loop comprising a first phase comparator. Furthermore, a second feedback loop is provided which searches for and stores the loop phase shift introduced by the resonator and its amplification circuit when they are locked at resonance by the first loop. The first and the second loops operate during a calibration phase. A third self-oscillation loop is set up during an operation phase. It directly links the output of the controllable phase shifter to the input of the resonator. The phase shifter receives the phase-shift control stored by the second loop.

An integrated circuit (10) has an internal RC-oscillator (20) for providing an internal clock signal (CLI) having an adjustable oscillator frequency. The integrated circuit (10) further comprises terminals (101, 102) for connecting an external LC tank (30) having a resonance frequency and a calibration circuit (40) which is configured to adjust the oscillator frequency based on the resonance frequency of the LC tank (30) connected during operation of the integrated circuit (10). An internal auxiliary oscillator (46) is connected to the terminals (101, 102) in a switchable fashion and is configured to generate an auxiliary clock signal (CLA) based on the resonance frequency. The calibration circuit (40) comprises a frequency comparator (47) which is configured to determine a trimming word (TRW) based on a frequency comparison of the internal clock signal (CLI) and the auxiliary clock signal (CLA). The LC tank (30) to be connected is an antenna for receiving a radio signal.

An oscillator module includes a first MOS transistor and a capacitor. The capacitor is coupled between a gate and source of the first MOS transistor. The drain of the first MOS transistor receives a first bias current and generates an oscillating output signal. A switching circuit operates in response to the oscillating output signal to selective charge and discharge the capacitor. A current sourcing circuit is configured to generate the bias current. The current sourcing circuit includes a second MOS transistor which has an identical layout to the first MOS transistor and receives a second bias current. A resistor is coupled between a gate and source of the second MOS transistor. The current sourcing circuit further includes a current mirror having an input configured to receive a reference current passing through the resistor and generate the first and second bias currents.

The invention relates to a method for operating control equipment (1) of a resonance circuit (2), wherein the control equipment (1) comprises at least two circuit elements (8, 9) connected in series, in particular each comprising a recovery diode (13, 14) connected in parallel, between which a connection (6) of the resonance circuit (2) is connected. According to the invention, the circuit elements (8, 9) are actuated as a function of the voltage detected at the connection (6). The invention further relates to control equipment (1) of a resonance circuit (2).

Disclosed are a phase locked loop (PLL) of a digital scheme and a method thereof. More specifically, disclosed are a digital phase locked loop having a time-to-digital converter (TDC), a digital loop filter (DLF), and a digitally controlled oscillator (DCO), and that is designed to have a constant jitter characteristic at all times even though an operating condition of a circuit varies according to a process, voltage, temperature (PVT) change, and a method thereof.

A ring oscillator circuit causing a pulse signal to circulate around a circle to which an even number of inverting circuits are connected in a ring, wherein one of the inverting circuits is a first starting inverting circuit, which drives a first pulse signal according to a control signal, another of the inverting circuits is a second starting inverting circuit, which drives a second pulse signal based on a leading edge of the first pulse signal, still another is a third starting inverting circuit, which drives a third pulse signal based on the leading edge of the first pulse signal after the second pulse signal is driven, and the first to third starting inverting circuits are arranged within the circle of the inverting circuits in order of the third, second, and first pulse signals in traveling directions of the pulse signals.

A ring-oscillator-based on-chip sensor (OCS) includes a substrate having a semiconductor surface upon which the OCS is formed. The OCS includes an odd number of digital logic stages formed in and on the semiconductor surface including a first stage and a last stage each including at least one NOR gate including a first gate stack and/or a NAND gate including a second gate stack. A feedback connection is from an output of the last stage to an input of the first stage. At least one discharge path including at least a first p-channel metal-oxide semiconductor (PMOS) device is coupled between the first gate stack and a ground pad, and/or at least one charge path including at least a first n-channel metal-oxide semiconductor (NMOS) device is coupled between the second gate stack a power supply pad.

An electronic oscillator circuit has a first oscillator, for supplying a first oscillation signal, a second oscillator, for supplying a second oscillation signal, a first controller for delivering the first control signal as a function of a phase difference between a first controller input and a second controller input of the first controller; a second controller for delivering the second control signal as a function of a phase difference between a first controller input of the second controller and a second controller input of the second controller; a resonator; at least a second resonance frequency, with a first phase shift dependent on the difference between the frequency of a second exciting signal and the second resonance frequency and processing means, for receiving the first oscillator signal and the second oscillator signal, determining their mutual proportion, looking up a frequency compensation factor in a prestored table and outputting a compensated oscillation signal.

A circuit includes first and second transconductance stages that generate first and second currents, respectively, in response to an input signal. A current combiner circuit selectively couples the first current to a first output, selectively couples the second current to the first output, selectively couples the first current to a second output, and selectively couples the second current to the second output. In response to the first current being coupled to both the first and second outputs, the current combiner circuit couples the second current to both the first and second outputs. In response to the first current being decoupled from the second output, the current combiner circuit decouples the second current from both the first and second outputs. In response to the first current being decoupled from the first output, the current combiner circuit decouples the second current from both the first and second outputs.

An embodiment is an integrated circuit structure including a first die attached to a second die by a first connector. The first connector includes a solder joint portion between a first nickel-containing layer and a second nickel-containing layer, a first copper-containing layer between the first nickel-containing layer and the solder joint portion, and a second copper-containing layer between the second nickel-containing layer and the solder joint portion.

In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

In a semiconductor device, where, with respect to a parasitic resistor in a current mirror circuit, a compensation resistor for compensating the parasitic resistor is provided in the current mirror circuit, the current mirror circuit includes at least two thin film transistors. The thin film transistors each have an island-shaped semiconductor film having a channel formation region and source or drain regions, a gate insulating film, a gate electrode, and source or drain electrodes, and the compensation resistor compensates the parasitic resistor of any one of the gate electrode, the source electrode, and the drain electrode. In addition, each compensation resistor has a conductive layer containing the same material as the gate electrode, the source or drain electrodes, or the source or drain regions.

A resistance having a high impedance is connected between anode terminals of two variable capacitance diodes sharing a cathode, and the components described above are sealed in one package. The resistance can be formed of a diffusion region between p-regions of the variable capacitance diodes or can be formed of polysilicon and disposed on a chip. Thus, the resistance can be mounted while a chip size of the variable capacitance diode is maintained. Accordingly, it is not required that a bias resistance having a high impedance is additionally provided, whereby achieving reduction in the substrate mounting area and reduction in costs of the set.

The present invention provides an apparatus for enhancing Q factor of an inductor. The apparatus includes a negative resistance generator coupled to the inductor for providing a negative resistance, and a bias circuit coupled to the negative resistance generator for biasing the negative resistance generator.

The invention provides a variable tuning circuit capable of extending a variable range in a high frequency band, ensuring the value of L of an inductor to increase the value of Q of a circuit in a low frequency band, and preventing a reduction in gain, an increase in noise, and unstable oscillation. A variable tuning circuit includes: a first parallel resonance circuit that includes a varactor diode, a capacitor connected in series to the varactor diode, and a first inductor connected in parallel to the varactor diode and the capacitor; and a second parallel resonance circuit that includes a second inductor connected in parallel to the varactor diode with a direct current cut-off capacitor interposed therebetween. When the varactor diode has a maximum capacitance, a resonant frequency of the second parallel resonance circuit is set about a lowest frequency in a variable frequency range.

In a double-tuning circuit including a primary tuning circuit having a first inductor and a first variable capacitive element connected in parallel and a secondary tuning circuit having a second inductor and a second variable capacitive element connected in parallel, a fixed part of a copper-foil pattern is connected to a connection point at which the double-tuning circuit is connected to an input terminal of a frequency mixing circuit, and a tip part of the copper-foil pattern extends to near the first inductor, whereby a trap circuit for attenuating an image frequency component is formed. A pattern is formed between a ground-side terminal of the first inductor and the ground, and a capacitor is connected between a connection point at which the first inductor is connected to one terminal of the pattern and a ground-side terminal of the second variable capacitive element.

A tuner and a transformer formed by printed circuit board thereof are provided. The transformer includes a first winding and a second winding. In which, the first winding forms a first inductor and the second winding forms a second inductor. The transformer is formed by the first and the second inductors, wherein the first winding and the second winding are formed by conducting wires of a printed circuit board.

A method applied in a tuning circuit comprising a plurality of turning cells is disclosed. the method comprises: laying out a array of tuning cells in a matrix configuration, the matrix comprising a first dimension and a second dimension; assigning a first index associated with the first dimension and a second index associated with the second dimension to each tuning cell; controlling each tuning cell using a word line and a bit line; and summing up outputs from all tuning cells to form a combined output. The tuning cell provides a first circuit value or a second circuit value according to the logical value of the bit line, and the difference between the first circuit value and the second circuit value is determined such that a turning resolution of the tuning circuit is determined.

The tuner circuit comprises a HF input and a HF output with a loop through function, wherein a variable capacitance diode is coupled with a first terminal to the HF input and with a second terminal to the HF output for providing a passive loop through function. The variable capacitance diode is in particular in a passing mode, when no DC reverse voltage is applied, for providing a passive loop through function. In a preferred embodiment, the tuner circuit is designed for reception of television channels, and for the variable capacitance diode one or two tuning variable capacitance diode is used being designed for satellite tuners with a frequency range of 1-2 GHz, or a specially designed variable capacitance diode with a capacitance ratio C1/C25>18 at a frequency of 1 MHz for DC reverse voltages of 1 and 25 Volts is used.

A circuit (C1-C4) is employed in a TWACS transponder (T) installed in an electric meter (M). The transponder generates inbound signals (IB) transmitted from the location of the electric meter to a central location (R). Firmware (F) within the transponder controls the flow of current for each pulse through the circuit by triggering a semi-conductor device such as a SCR (X1) or TRIAC (X2). The resulting current flow through the inductor for a subsequent pulse, regardless of the pulse's polarity, will be in the opposite direction to that of the previous pulse. The result is to maintain a constant level of magnetization of the inductor core which does not have to be overcome by energy in the subsequent pulse resulting in amplitude of all the pulses imposed on an AC waveform being substantially the same.

A semiconductor trimming circuit includes parallel coupled PMOS devices coupled in parallel with parallel coupled NMOS devices and an additional pair of dummy NMOS devices. The dummy NMOS devices are coupled in parallel with the NMOS devices. A trimming circuit for an internal clock source may be formed with an array of such switches for selecting one or more trimming capacitors of the trimming circuit. Such an array has a low leakage current and permits good trimming linearity.

A method and apparatus for use in a digitally tuning a capacitor in an integrated circuit device is described. A Digitally Tuned Capacitor DTC is described which facilitates digitally controlling capacitance applied between a first and second terminal. In some embodiments, the first terminal comprises an RF+ terminal and the second terminal comprises an RF− terminal. In accordance with some embodiments, the DTCs comprise a plurality of sub-circuits ordered in significance from least significant bit (LSB) to most significant bit (MSB) sub-circuits, wherein the plurality of significant bit sub-circuits are coupled together in parallel, and wherein each sub-circuit has a first node coupled to the first RF terminal, and a second node coupled to the second RF terminal. The DTCs further include an input means for receiving a digital control word, wherein the digital control word comprises bits that are similarly ordered in significance from an LSB to an MSB.

A booster circuit is configured, such that: in response to a reading request for reading data from a flash memory, when a voltage of an output terminal detected by a voltage detection circuit is not higher than a voltage, an oscillator outputs a control clock signal of predetermined on time and off time to a transistor of a boost converter to perform switching control of the transistor; and when the voltage detection circuit detects that the voltage of the output terminal reaches a voltage, an oscillator outputs a control clock signal of an on time and an off time input from a selection circuit to a transistor of a boost converter to perform switching control of the transistor.

A quantum information processing system includes a waveguide having an aperture, a non-linear quantum circuit disposed in the waveguide and an electromagnetic control signal source coupled to the aperture.

To reduce power supply noises occurring in a control circuit unit for controlling an output buffer. A semiconductor device includes unit buffers for driving a data output terminal, impedance control circuits for controlling the unit buffers, and a control circuit unit for controlling the impedance control circuits. The impedance control circuits and the control circuit unit operate by mutually-different power supplies, the control circuit unit supplies pull-up data and pull-down data in mutually reverse phase to the impedance control circuits, and the impedance control circuits convert the pull-up data and the pull-down data from reverse phase to in-phase and supply the same to the unit buffers. Thereby, a noise is difficult to occur in a power supply VDD used for the control circuit unit.

A sequence circuit includes first through third signal terminals, first through ninth resistors, and first through fifth electronic switches. The sequence circuit receives a first signal through the first signal terminal. The sequence circuit receives a second signal through the second signal terminal. The sequence circuit outputs a third signal through the third signal terminal. The sequence circuit is used to ensure the sequence of the first through third signals.

A receiver circuit includes a first amplification unit, a second amplification unit, a first equalizing unit, and a second equalizing unit. The first amplification unit is configured to differentially amplify an input signal and a reference signal and generate a first intermediate output signal and a second intermediate output signal. The second amplification unit is configured to differentially amplify the first and second intermediate output signals and generate an output signal. The first equalizing unit is configured to control the level of the second intermediate output signal in response to the output signal. And the second equalizing unit is configured to control the level of the first intermediate output signal in response to the output signal.

Flip-flops in a monolithic three-dimensional (3D) integrated circuit (IC)(3DIC) and related method are disclosed. In one embodiment, a single clock source is provided for the 3DIC and distributed to elements within the 3DIC. Delay is provided to clock paths by selectively controllable flip-flops to help provide synchronous operation. In certain embodiments, 3D flip-flop are provided that include a master latch disposed in a first tier of a 3DIC. The master latch is configured to receive a flip-flop input and a clock input, the master latch configured to provide a master latch output. The 3D flip-flop also includes at least one slave latch disposed in at least one additional tier of the 3DIC, the at least one slave latch configured to provide a 3DIC flip-flop output. The 3D flip-flop also includes at least one monolithic intertier via (MIV) coupling the master latch output to an input of the slave latch.

A storage cell having a pulse generator and a storage element is proposed. The storage element input is connected to receive a data input signal. The storage element output is connected to provide a data output signal. The storage element is operable in one of a data retention state and a data transfer state in response to a storage control signal received from the pulse generator. The pulse generator is connected to receive a clock signal with rising and falling clock signal edges and is adapted to provide control pulses in the storage control signal. Each control pulse has a leading edge and a trailing edge. The control pulses have a polarity suited to invoke the data transfer state on their leading edges. The novel feature is that the pulse generator is adapted to initiate a rising-edge control pulse when receiving a rising clock signal edge and to initiate a falling-edge control pulse when receiving a falling clock signal edge. In this way, a dual-edge-triggered flip-flop may be made using only combinatorial logic circuitry and one level- or single-edge-triggered storage element. The storage cell has low power consumption, facilitates scan testing and can be used by existing design tools and test equipment.