Location: Engineering Library- TA1522.N66 2016

The coupled resonator comprises a first low frequency resonator, such as a balance spring (1) and a second higher frequency resonator, such as a tuning fork (2), the two resonators (1 and 2) including permanent mechanical coupling means. Application to the regulating system of a timepiece.

The invention relates to an optical resonator, laser apparatus and a method of generating a laser beam inside an optical resonator. The optical resonator (100) includes an optical cavity (102) and an optical element (104.1, 104.2) at either end thereof, operable to sustain a light beam (108) therein, characterized in that each optical element (104.1, 104.2) is a phase-only optical element operable to alter a mode of the beam (108) as it propagates along the length of the optical resonator (100), such that in use the beam (108) at one end of the optical resonator (100) has a Gaussian profile while the beam (108) at the other end of the optical resonator (100) has a non-Gaussian profile.

Disclosed is an ASE-free continuously tunable external resonator laser in which reduction in tuning range and decrease in output are suppressed. The external resonator laser comprises: a fixed support body which has a half mirror that partially reflects incident light and partially transmits incident light fixed therein; and a rotatory support body which is rotatably supported by the fixed support body by way of a shaft, and which has a laser chip that emits light, a collimator lens that collimates light emitted from the laser chip, and a diffraction grating that diffracts light emitted from the laser chip, fixed therein.

The present disclosure relates to nanoresonator oscillators or NEMS (nanoelectromechanical system) oscillators. A circuit for measuring the oscillation frequency of a resonator is provided, comprising a first phase-locked feedback loop locking the frequency of a controlled oscillator at the resonant frequency of the resonator, this first loop comprising a first phase comparator. Furthermore, a second feedback loop is provided which searches for and stores the loop phase shift introduced by the resonator and its amplification circuit when they are locked at resonance by the first loop. The first and the second loops operate during a calibration phase. A third self-oscillation loop is set up during an operation phase. It directly links the output of the controllable phase shifter to the input of the resonator. The phase shifter receives the phase-shift control stored by the second loop.

A resonator element includes a substrate including a first principal surface and a second principal surface respectively forming an obverse surface and a reverse surface of the substrate, and vibrating in a thickness-shear vibration mode, a first excitation electrode disposed on the first principal surface, and a second excitation electrode disposed on the second principal surface, and being larger than the first excitation electrode in a plan view, the first excitation electrode is disposed so as to fit into an outer edge of the second excitation electrode in the plan view, and the energy trap confficient M fulfills 15.5≦M≦36.7.

A resonator element includes a substrate vibrating in a thickness-shear vibration mode, a first excitation electrode disposed on one principal surface of the substrate, and has a shape obtained by cutting out four corners of a quadrangle, and a second excitation electrode disposed on the other principal surface of the substrate, and a ratio (S2/S1) between the area S1 of the quadrangle and the area S2 of the first excitation electrode fulfills 87.7%≦(S2/S1)

Arrays of resonator sensors include an active wafer array comprising a plurality of active wafers, a first end cap array coupled to a first side of the active wafer array, and a second end cap array coupled to a second side of the active wafer array. Thickness shear mode resonator sensors may include an active wafer coupled to a first end cap and a second end cap. Methods of forming a plurality of resonator sensors include forming a plurality of active wafer locations and separating the active wafer locations to form a plurality of discrete resonator sensors. Thickness shear mode resonator sensors may be produced by such methods.

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

A microelectromechanical (MEM) resonator includes a resonant cavity disposed in a first layer of a first solid material disposed on a substrate and a first plurality of reflectors disposed in the first layer in a first direction with respect to the resonant cavity and to each other. Each of the first plurality of reflectors comprises an outer layer of a second solid material and an inner layer of a third solid material. The inner layer of each of the first plurality of reflectors is adjacent in the first direction to the outer layer of each reflector and to either the outer layer of an adjacent reflector or the resonant cavity.

The adjustable resonator according to the invention has a casing, which is composed of walls, a lid and a bottom, a resonator cavity inside the casing and an internal conductor inside the resonator cavity, which internal conductor is in electric contact with the casing. The resonator further comprises a moveable adjustment piece, which comprises a conductive adjustment member, a conductive upper plate, and a dielectric support member. The adjustment member has a stem, which is vertical, and a cap as an expansion thereof. The adjustment member can be moved downwards so that its stem and the fixed internal conductor connected to the bottom of the resonator go within each other. The movement of the adjustment piece in the coaxial resonator first decreases the resonance frequency and then slowly increases it. Therefore the resonator provides a very wide adjustment area for the resonance frequency.

A surface acoustic wave (SAW) resonator and a SAW oscillator and an electronic apparatus including the resonator are to be provided. A SAW resonator includes: an IDT exciting a SAW using a quartz crystal substrate of Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, 42.79°≦|ψ|≦49.57°); one pair of reflection units arranged so as allow the IDT to be disposed therebetween; and grooves acquired by depressing the quartz crystal substrate located between electrode fingers. When a wavelength of the SAW is λ, and a depth of the grooves is G, “0.01λ≦G” is satisfied.

A fluid line includes a resonator having an inner part and a blow-molded outer part defining an inner surface. The inner and outer parts are fixedly connected. The inner part is an injection-molded part having first and second radial collars spaced axially apart from each other. The inner part defines a radial circumference with a plurality of orifices formed therein. The inner and outer parts are axially one within the other so that there is no throughflow of secondary air between the first and second radial collars and the inner surface of the outer part. The inner and outer parts have a common end whereat they are airtightly connected to each other. The inner part, the radial collars and the inner surface of the outer part conjointly define two resonant chambers operatively connected to fluid in the fluid line via the orifices.

An acoustic resonator and a method of manufacturing the same are provided. An acoustic resonator includes a resonating part disposed on a substrate, a cap accommodating the resonating part and bonded to the substrate, and a bonded part bonding the cap and the substrate to each other, the bonding part including at least one block disposed between a bonding surface of the cap and a bonding surface of the substrate to block a leakage of a bonding material that forms the bonded part during a bonding operation.

A resonator is provided that suppresses vibration of a retainer caused by undesired vibration of a vibrating portion and also achieves size reduction. Specifically, the resonator includes a vibrating member that includes a semiconductor layer, a first piezoelectric film formed on the semiconductor layer, and a first upper electrode formed on the first piezoelectric film. Moreover, a retainer is provided to retain the vibrating member such that the vibrating portion can vibrate and one or more coupling members are provided to couple the vibrating member to the retainer. Finally, the resonator includes a vibration suppressing member that includes a second piezoelectric film formed on the retainer and a second upper electrode formed on the second piezoelectric film.

An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

A resonator is provided that suppresses frequency variations with etching without decreasing the strength of vibration arms. The resonator includes a base portion, a first vibration portion extending from the base portion in a first direction and having a first width, and a second vibration portion extending from the base portion in the first direction with a first gap between the first and second vibration portions and having the first width. The first and second vibration portions perform out-of-plane bending vibration with opposite phases at a predetermined frequency. The predetermined frequency varies in accordance with the first width and the first gap. The ratio of the first gap to the first width is within a range that causes an absolute value of rates of variations in the predetermined frequency with respect to variations in the first width and in the first gap to be not more than about 100 ppm.

A monolithic integration of phase change material (PCM) switches with a MEMS resonator is provided to implement switching and reconfiguration functionalities. MEMS resonator includes a piezoelectric material to control terminal connections to the electrodes. The PCM is operable between an ON state and an OFF state by application of heat, which causes the phase change material to change from an amorphous state to a crystalline state or from a crystalline state to an amorphous state, the amorphous state and the crystalline state each associated with one of the ON state and the OFF state. A method of fabricating the MEMS resonator with phase change material is provided. A reconfigurable filter system using the MEMS resonators is also provided.

An AT-cut crystal element includes a crystal element having two side surfaces (namely, a Z'-surface) intersecting with a Z-axis of a crystallographic axis thereof. At least one of the two side surfaces is constituted of three of first to third surfaces. The first to the third surfaces meeting following conditions: the first to the third surfaces intersect with one another in this order and formed by rotating a principal surface of the crystal element by predetermined angles; and expressing the angle of the first surface as θ1, a length of the first surface as D, a thickness of a part of the crystal element having the principal surface as t, and M=D/t, and a conversion percentage as fn (M, (θ1)), the θ1 and the M are set such that the conversion percentage fn (M, (θ1)) becomes a predetermined value Th or less.

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