Synchrotron light sources can provide the required spatial coherence, stability and control to support the development of advanced lithography at the extreme ultraviolet and soft X-ray wavelengths that are relevant to current and future fabricating technologies. Here an evaluation of the optical performance of the soft X-ray (SXR) beamline of the Australian Synchrotron (AS) and its suitability for developing interference lithography using radiation in the 91.8 eV (13.5 nm) to 300 eV (4.13 nm) range are presented. A comprehensive physical optics model of the APPLE-II undulator source and SXR beamline was constructed to simulate the properties of the illumination at the proposed location of a photomask, as a function of photon energy, collimation and monochromator parameters. The model is validated using a combination of experimental measurements of the photon intensity distribution of the undulator harmonics. It is shown that the undulator harmonics intensity ratio can be accurately measured using an imaging detector and controlled using beamline optics. Finally, the photomask geometric constraints and achievable performance for the limiting case of fully spatially coherent illumination are evaluated.

A fabrication method comprising near-field holography (NFH) with an electron beam lithography (EBL)-written phase mask was developed to fabricate soft X-ray varied-line-spacing gratings (VLSGs). An EBL-written phase mask with an area of 52 mm × 30 mm and a central line density greater than 3000 lines mm−1 was used. The introduction of the EBL-written phase mask substantially simplified the NFH optics for pattern transfer. The characterization of the groove density distribution and diffraction efficiency of the fabricated VLSGs indicates that the EBL–NFH method is feasible and promising for achieving high-accuracy groove density distributions with corresponding image properties. Vertical stray light is suppressed in the soft X-ray spectral range.

In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). In some embodiments, the sensitivity to changes in βf is reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in βf is reduced.

A method for mask data preparation or mask process correction is disclosed in which a set of charged particle beam shots is determined which is capable of forming a pattern on a surface, wherein critical dimension uniformity (CDU) of the pattern is optimized. In some embodiments the CDU is optimized by varying at least two factors. In other embodiments, model-based techniques are used. In yet other embodiments, the surface is a reticle to be used in an optical lithographic process to form a pattern on a wafer, and CDU on the wafer is optimized.

A method and system for optical proximity correction (OPC) is disclosed in which a set of shaped beam shots is determined which, when used in a shaped beam charged particle beam writer, will form a pattern on a reticle, where some of the shots overlap, where the pattern on the reticle is an OPC-corrected version of an input pattern, and where the sensitivity of the pattern on the reticle to manufacturing variation is reduced. A method for fracturing or mask data preparation is also disclosed.

Template and method of making high aspect ratio template, stamp, and imprinting at nanoscale using nanostructures for the purpose of lithography, and to the use of the template to create perforations on materials and products.

Systems and methods for liquid deposition photolithography are described. In particular, some embodiments relate to systems and methods for using photolithography to control the 2D structure of a thin layer of material (e.g., photopolymer) using various masks, projection optics and materials. In one or more embodiments, this thin layer can be manipulated by micro-fluidic techniques such that it can be formed, patterned and post-processed in a liquid environment, vastly simplifying the creation of multi-layer structures. Multiple layers are rapidly built up to create thick structures of possibly multiple materials that are currently challenging to fabricate by existing methods.

An extreme ultraviolet lithography (EUVL) process is performed on a target, such as a semiconductor wafer, having a photosensitive layer. The method includes providing a one-dimensional patterned mask along a first direction. The patterned mask includes a substrate including a first region and a second region, a multilayer mirror above the first and second regions, an absorption layer above the multilayer mirror in the second region, and a defect in the first region. The method further includes exposing the patterned mask by an illuminator and setting the patterned mask and the target in relative motion along the first direction while exposing the patterned mask. As a result, an accumulated exposure dose received by the target is an optimized exposure dose.

A method includes scanning a lithography mask with a repair process, and measuring back-scattered electron signals of back-scattered electrons generated from the scanning. An endpoint is determined from the back-scattered electron signals. A stop point is calculated from the endpoint. The step of scanning is stopped when the calculated stop point is reached.

A projection exposure tool for microlithography for imaging mask structures of an image-providing substrate onto a substrate to be structured includes a measuring apparatus configured to determine a relative position of measurement structures disposed on a surface of one of the substrates in relation to one another in at least one lateral direction with respect to the substrate surface and to thereby simultaneously measure a number of measurement structures disposed laterally offset in relation to one another.

Disclosed are methods of lithography using a tip array having a plurality of pens attached to a backing layer, where the tips can comprise a metal, metalloid, and/or semi-conducting material, and the backing layer can comprise an elastomeric polymer. The tip array can be used to perform a lithography process in which the tips are coated with an ink (e.g., a patterning composition) that is deposited onto a substrate upon contact of the tip with the substrate surface. The tips can be easily leveled onto a substrate and the leveling can be monitored optically by a change in light reflection of the backing layer and/or near the vicinity of the tips upon contact of the tip to the substrate surface.

A mirror for the EUV wavelength range (1) having a layer arrangement (P) applied on a substrate (S), the layer arrangement having a periodic sequence of individual layers, where the periodic sequence has at least two individual layers—forming a period—composed respectively of silicon (Si) and ruthenium (Ru). Also disclosed are a projection objective for microlithography (2) including such a mirror, and a projection exposure apparatus for microlithography having such a projection objective (2).

One embodiment relates to an apparatus for electron beam lithography which includes a linear array of reflection electron beam lithography columns and a rotary stage. Each column is separately controllable to write a portion of a lithographic pattern onto a substrate. The rotary stage is configured to hold multiple substrates and to be rotated under the linear array of reflection electron beam lithography columns. Another embodiment relates to a method of electron beam lithography which includes simultaneously rotating and linearly translating a stage holding a plurality of wafers, and writing a lithography pattern using a linear array of reflection electron beam lithography columns over the stage. Each said column traverses a spiral path over the stage as the stage is rotated and linearly translated. Other embodiments, aspects and feature are also disclosed.

In a variable data lithography system that employs a patterned dampening fluid layer for image formation, dampening fluid may be removed prior to image transfer to a substrate. Removed dampening fluid may be recovered and recycled to reduce operating expenses and environmental waste. A replacement fluid may be applied after inking and after removal of the dampening fluid. The replacement fluid preferentially occupies the regions previously occupied by dampening fluid, and may lubricate the transfer nip. Any replacement fluid and ink not transferred to the substrate upon printing may then be cleaned from the print image carrier prior to forming a new dampening fluid layer and subsequent pattern formation.

The present invention relates to a silicone rubber like material and a printing device including a stamp layer (100;201) comprising such a material. The material is suitable for use in soft lithography as it enables stable features having dimensions in the nanometer range to be obtained on a substrate, and also allows for the accommodation onto rough and non-flat substrate surfaces. The invention also relates to methods for manufacturing the silicone rubber like material and stamp layer (100;201) and use thereof in lithographic processes.

A method for initializing a first operation in a first module at a first start time value in a first time base, the method comprising generating a clock signal, generating a second time base in the first module based on the clock signal, determining a second sync value in the second time base, determining a first sync value in the first time base corresponding to a second sync value in the second time base, determining a start trigger value in the second time base based on the first sync value and the start time value in the first time base, and initializing the first operation in the first module based on the start trigger value and a current value of the second time base in the first module.

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