e4s Ab initio crystal structures and relative phase stabilities for the aleksite series, PbnBi4Te4Sn+2 By journals.iucr.org Published On :: 2023-11-01 Density functional theory methods are applied to crystal structures and stabilities of phases from the aleksite homologous series, PbnBi4Te4Sn+2 (n = homologue number). The seven phases investigated correspond to n = 0 (tetradymite), 2 (aleksite-21R and -42R), 4 (saddlebackite-9H and -18H), 6 (unnamed Pb6Bi4Te4S8), 8 (unnamed Pb8Bi4Te4S10), 10 (hitachiite) and 12 (unnamed Pb12Bi4Te4S14). These seven phases correspond to nine single- or double-module structures, each comprising an odd number of atom layers, 5, 7, (5.9), 9, (7.11), 11, 13, 15 and 17, expressed by the formula: S(MpXp+1)·L(Mp+1Xp+2), where M = Pb, Bi and X = Te, S, p ≥ 2, and S and L = number of short and long modules, respectively. Relaxed structures show a and c values within 1.5% of experimental data; a and the interlayer distance dsub decrease with increasing PbS content. Variable Pb—S bond lengths contrast with constant Pb—S bond lengths in galena. All phases are n-fold superstructures of a rhombohedral subcell with c/3 = dsub*. Electron diffraction patterns show two brightest reflections at the centre of dsub*, described by the modulation vector qF = (i/N) · dsub*, i = S + L. A second modulation vector, q = γ · csub*, shows a decrease in γ, from 1.8 to 1.588, across the n = 0 to n = 12 interval. The linear relationship between γ and dsub allows the prediction of any theoretical phases beyond the studied compositional range. The upper PbS-rich limit of the series is postulated as n = 398 (Pb398Bi4Te4S400), a phase with dsub (1.726 Å) identical to that of trigonal PbS within experimental error. The aleksite series is a prime example of mixed layer compounds built with accretional homology principles. Full Article text
e4s 2017 IEEE/ACM 12th International Workshop on Software Engineering for Science (SE4Science) [electronic journal]. By encore.st-andrews.ac.uk Published On :: IEEE / Institute of Electrical and Electronics Engineers Incorporated Full Article