The rotating substrate method of crystallite deposition is modeled, allowing computation of effective material coefficients of the layers resulting from the averaging. A worked numerical example particularized to 6mm ZnO is provided.

Large-bandwidth pulses produced by cutting-edge X-ray free-electron lasers (FELs) are of great importance in research fields like material science and biology. In this paper, a new method to generate high-power ultrashort FEL pulses with tunable spectral bandwidth with spectral coherence using a dielectric-lined waveguide without interfering operation of linacs is proposed. By exploiting the passive and dephasingless wakefield at terahertz frequency excited by the beam, stable energy modulation can be achieved in the electron beam and large-bandwidth high-intensity soft X-ray radiation can be generated. Three-dimensional start-to-end simulations have been carried out and the results show that coherent radiation pulses with duration of a few femtoseconds and bandwidths ranging from 1.01% to 2.16% can be achieved by changing the undulator taper profile.

There are provided a dielectric ceramic having a high Qf value in a relative permittivity ∈r range of 35 to 45, and a small absolute value of a temperature coefficient τf which indicates change of the resonant frequency in a wide temperature range from a low temperature range to a high temperature range, and a dielectric filter having the dielectric ceramic. A dielectric ceramic includes: a main component, molar ratios α, β, and γ satisfying expressions of 0.240≦α≦0.470, 0.040≦β≦0.200, 0.400≦γ≦0.650, and α+β+γ=1 when a composition formula of the main component is represented as αZrO2.βSnO2.γTiO2; and Mn, a content of Mn in terms of MnO2 being greater than or equal to 0.01% by mass and less than 0.1% by mass with respect to 100% by mass of the main component.

A liquid composition is provided for forming a thin film in the form of a mixed composite metal oxide in which a composite oxide B containing copper (Cu) and a composite oxide C containing manganese (Mn) are mixed into a composite metal oxide A represented with the general formula: Ba1-xSrxTiyO3, wherein the molar ratio B/A of the composite oxide B to the composite metal oxide A is within the range of 0.002

There are provided a dielectric composition and a preparation method thereof, the dielectric composition including: a first perovskite powder for a core represented by ABO3: and a second perovskite powder for a shell represented by ABO3, having an average particle diameter corresponding to ⅓ to 1/10 of an average particle diameter of the first perovskite powder, and included in an amount of 1 to 70 parts by weight with respect to 100 parts by weight of the first perovskite powder, wherein particles of the second perovskite powder have pores having a volume fraction of 3 to 50 vol % therein. According to the present invention, there are provided a dielectric composition having excellent dielectric characteristics and electrical characteristics, and a preparation method thereof.

A dielectric ceramic material comprises a primary component of barium titanate (BaTiO3) and at least one additive component. The additive component has a mole percentage from 1% to 50% and is selected from the group consisting of lithium tantalite (LiTaO3), barium cerate (BaCeO3), sodium metaniobate (NaNbO3) and the combinations thereof.

There is provided a dielectric composition including: a base powder including BaTiO3; a first accessory component including a content (x1) of 0.1 to 1.0 at % of an oxide or a carbonate including transition metals, based on 100 moles of the base powder; a second accessory component including a content (y) of 0.01 to 3.0 at % of oxide or carbonate including a fixed valence acceptor element, based on 100 moles of the base powder; a third accessory component including an oxide or a carbonate including a Ce element (content of z at %) and at least one rare earth element (content of w at %); and a fourth accessory component including a sintering aid, wherein 0.01≦z≦x1+4y and 0.01≦z+w≦x1+4y based on 100 moles of the base powder.

A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.

This invention is directed to a polymer thick film UV-curable thermoformable dielectric composition. Dielectrics made from the composition can be used in various electronic applications to protect electrical elements and particularly to insulate and protect both the conductive thermoformable silver and the polycarbonate substrate below it in capacitive switch applications. The thermoformed capacitive switch circuit may be subsequently subjected to an injection molding process.

In some embodiments, an improved mechanical adhesion of copper metallization to dielectric with partially cured epoxy fillers is presented. In this regard, a substrate build-up film is introduced having epoxy material and a plurality of epoxy microspheres, wherein an interior of the microspheres is not fully cured. Other embodiments are also disclosed and claimed.

One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.

Various aspects provide for structures and devices to protect against spurious electrical events (e.g., electrostatic discharge). Some embodiments incorporate a voltage switchable dielectric material (VSDM) bridging a gap between two conductive pads. Normally insulating, the VSDM may conduct current from one pad to the other during a spurious electrical event (e.g., shunting current to ground). Some aspects include gaps having a gap width that is greater than 50% of a spacing between electrical leads connected to the pads. Some devices include single layers of VSDM. Some devices include multiple layers of VSDM. Various devices may be designed to increase a ratio of active volume (of VSDM) to inactive volume.

A substrate device includes an embedded layer of VSD material that overlays a conductive element or layer to provide a ground. An electrode, connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.

Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

This disclosure relates to methods and systems to reduce high voltage breakdown jitters in liquid dielectric switches. In particular, dielectric liquids have been produced that contain a suspension of nanoparticles and a surfactant to reduce the breakdown jitter. In one embodiment, the suspended nanoparticles are Barium Strontium Titanate (BST) nanoparticles.

A seal device that may be for a variable area fan nozzle (VAFN) assembly of a turbofan engine is positioned between first and second surfaces configured to move between close and distant positions. The seal device includes a first electrode engaged to the first surface and a second electrode spaced between the first and second surfaces and spaced from the first electrode. A resilient first element of the device is disposed between and engages to the first and second electrodes, and is configured to move between contracted and expanded states when the electrodes are energized. A resilient second element of the device opposes the second surface and is engaged to the second electrode. The second element is configured to move between a compressed mode when the first and second surfaces are in the close position and an extended mode when the first and second surfaces are in the distant position.

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