An anti-disassembling device for an electronic product includes a case, a linear movement device, a circular movement device and an optical encoder. At least one retractable transmission member is connected to the case. The circular movement device is located in the case and has an encoding disk, which has multiple slots defined therethrough and teeth are defined in the periphery thereof. The at least one retractable transmission member is engaged with the teeth to rotate the encoding disk. The optical encoder has a lighting module which emits light beams through the slots of the encoding disk and a photosensitive module receives the light beams and sends a signal to the storage unit of the electronic product. The retractable device rotates when the electronic product is disassembled.

A bridge output circuit includes an output terminal, a high side transistor, a low side transistor, a high side driver for controlling a gate voltage of the high side transistor, a low side driver for controlling a gate voltage of the low side transistor, and a controller for controlling the high side and low side drivers. The low side driver includes a first current source, a second current source, and a first assist circuit. The controller is configured to control the turning-on and turning-off states of the first current source, the second current source and the first assist circuit.

A multi-chip package may include first and second integrated circuit dies that are each partitioned into multiple logic regions. The logic regions of the first and second dies may be coupled via interconnects. Each integrated circuit die may include at least one spare logic region. Multiple logic groups may be formed with each logic group including logic regions from the first and second integrated circuit dies and the interconnects that couple those logic regions. The logic groups may be evaluated to identify defective logic groups. In response to identifying a defective logic group, the defective logic group may be repaired by configuring the first and second integrated circuit dies to stop using the defective logic group and to use a spare logic group. The spare logic group may include spare logic regions of the first and second dies that are coupled by spare logic region interconnects.

A method of configuring a programmable integrated circuit device with a user logic design includes analyzing the user logic design to identify unidirectional logic paths within the user logic design and cyclic logic paths within the user logic design, assigning the cyclic logic paths to logic in a first portion of the programmable integrated circuit device that operates at a first data rate, assigning the unidirectional logic paths to logic in a second portion of the programmable integrated circuit device that operates at a second data rate lower than the first data rate, and pipelining the unidirectional data paths in the second portion of the programmable integrated circuit device to compensate for the lower second data rate. A programmable integrated circuit device adapted to carry out such method may have logic regions operating at different rates, including logic regions with programmably selectable data rates.

An isolator circuit capable of two-way electrical disconnection and a semiconductor device including the isolator circuit are provided. A data holding portion is provided in an isolator circuit without the need for additional provision of a data holding portion outside the isolator circuit, and data which is to be input to a logic circuit that is in an off state at this moment is stored in the data holding portion. The data holding portion may be formed using a transistor with small off-state current and a buffer. The buffer can include an inverter circuit and a clocked inverter circuit.

Disclosed herein is a device that includes first and second buffer circuits connected to a data terminal and a first control circuit controlling the first and second buffer circuits. The first control circuit receives n pairs of first and second internal data signals complementary to each other from 2n input signal lines and outputs a pair of third and fourth internal data signals complementary to each other to first and second output signal lines, where n is a natural number more than one. The first and second buffer circuits are controlled based on the third and fourth internal data signals such that one of the first and second buffer circuits turns on and the other of the first and second buffer circuits turns off.

A semiconductor device includes an internal circuit, a power supply control circuit which controls supply of a power supply to the internal circuit upon receipt of a first control signal, and a control signal generation circuit which outputs the first control signal upon receipt of a second control signal. The control signal generation circuit does not deactivate the first control signal when an inactive period of the second control signal is equal to or less than a first period and deactivates the first control signal when the inactive period of the second control signal is more than the first period.

An embodiment of this invention uses a massive parallel interconnect fabric (MPIF) at the flipped interface of a core die substrate (having the core logic blocks) and a context die (used for in circuit programming/context/customization of the core die substrate), to produce ASIC-like density and FPGA-like flexibility/programmability, while reducing the time and cost for development and going from prototyping to production, reducing cost per die, reducing or eliminating NRE, and increasing performance. Other embodiments of this invention enable debugging complex SoC through large contact points provided through the MPIF, provide for multi-platform functionality, and enable incorporating FGPA core in ASIC platform through the MPIF. Various examples are also given for different implementations.

To provide a circuit used for a shift register or the like. The basic configuration includes first to fourth transistors and four wirings. The power supply potential VDD is supplied to the first wiring and the power supply potential VSS is supplied to the second wiring. A binary digital signal is supplied to each of the third wiring and the fourth wiring. An H level of the digital signal is equal to the power supply potential VDD, and an L level of the digital signal is equal to the power supply potential VSS. There are four combinations of the potentials of the third wiring and the fourth wiring. Each of the first transistor to the fourth transistor can be turned off by any combination of the potentials. That is, since there is no transistor that is constantly on, deterioration of the characteristics of the transistors can be suppressed.

A method in a circuit comprises providing a first clock by a resistor-capacitor (RC) oscillator; demodulating a plurality of input signals to form a plurality of demodulated input signals; discriminating frequency ranges of the plurality of demodulated input signals according to the first clock; determining whether a first predetermined number of consecutive demodulated input signals among the plurality of demodulated input signals fall into a first predetermined frequency range; triggering a crystal oscillator to provide a second clock to calibrate the first clock if the first predetermined number of consecutive input signals fall into the first predetermined frequency range.

A resonator element includes a substrate including a first principal surface and a second principal surface respectively forming an obverse surface and a reverse surface of the substrate, and vibrating in a thickness-shear vibration mode, a first excitation electrode disposed on the first principal surface, and a second excitation electrode disposed on the second principal surface, and being larger than the first excitation electrode in a plan view, the first excitation electrode is disposed so as to fit into an outer edge of the second excitation electrode in the plan view, and the energy trap confficient M fulfills 15.5≦M≦36.7.

A resonator element includes a substrate vibrating in a thickness-shear vibration mode, a first excitation electrode disposed on one principal surface of the substrate, and has a shape obtained by cutting out four corners of a quadrangle, and a second excitation electrode disposed on the other principal surface of the substrate, and a ratio (S2/S1) between the area S1 of the quadrangle and the area S2 of the first excitation electrode fulfills 87.7%≦(S2/S1)

An oscillating device includes a temperature compensated oscillator that compensates a frequency temperature characteristic in a temperature compensation range including apart of a first temperature range, and a temperature control circuit that includes a heater and controls a temperature of a quartz crystal resonator of the temperature compensated oscillator into a second temperature range included in the temperature compensation range. Further, the temperature compensation range of the temperature compensated oscillator may include a part of the first temperature range in which compensation can be performed by first-order approximation.

An atomic oscillator includes: a gas cell which includes two window portions having a light transmissive property and in which metal atoms are sealed; a light emitting portion that emits excitation light to excite the metal atoms in the gas cell; a light detecting portion that detects the excitation light transmitted through the gas cell; a heater that generates heat; and a connection member that thermally connects the heater and each window portion of the gas cell to each other.

An oscillation device is provided. The oscillation device includes: a main circuit portion, a heating unit, first and second crystal units, first and second oscillator circuits, a frequency difference detector, a first addition unit, an integration circuit unit, a circuit unit configured to control an electric power to be supplied to the heating unit, a compensation value obtaining unit, and a second addition unit. The compensation value obtaining unit is configured to obtain a frequency compensation value for compensating an output frequency of the main circuit portion based on an integrated value output from the integration circuit unit, and based on a change in the clock signal due to a difference between the temperature of the atmosphere and the temperature setting value of the heating unit. The second addition unit is configured to add the frequency compensation value to a frequency setting value.

An integrated structure of compound semiconductor devices is disclosed. The integrated structure comprises from bottom to top a substrate, a first epitaxial layer, an etching-stop layer, a second epitaxial layer, a sub-collector layer, a collector layer, a base layer, and an emitter layer, in which the first epitaxial layer is a p-type doped layer, the second epitaxial layer is an n-type graded doping layer with a gradually increased or decreased doping concentration, and the sub-collector layer is an n-type doped layer. The integrated structure can be used to form an HBT, a varactor, or an MESFET.

A current output control device is provided that includes: a current cell array section including plural current cell circuits that are each connected in parallel between a first terminal (power source) and a second terminal (ground) that connect between the first terminal and the second terminal in by operation ON so as to increase control current flowing between the first terminal and the second terminal; and a code conversion section (decoder) that generates signals (row codes, column codes) to ON/OFF control current cells so as to change the number of current cells that connect the first terminal and the second terminal according to change in an externally input code and that inputs the generated signals to the current cell array section.

A seal member for an aseptic coupling device includes a cross-sectional area including a first end portion, a middle portion, and a second end portion opposite the first end portion, the middle portion being thinner in radial dimension than the first and second end portions.

An apparatus includes a light foil device configured to move based on radiation pressure associated with light received by the light foil device. The apparatus includes a mechanism configured to transition between operational states in response to the movement of the light foil device, or includes a valve configured to control a flow of material through a conduit based, at least in part, on the movement of the light foil device.

In a control device for a technical processing plant, a pneumatically driven actuator having an actuator stem is provided together with a valve operated by the actuator, the valve having a valve stem. A valve element is attached to the valve stem. A stem connector connects the two stems to each other for a forced transmission of axial actuating movements and for modifying an axial distance between adjacent ends of the valve stem and the actuator stem to adjust a total axial length of the two stems. The stem connector comprises two half-shells connected to each other, and two positioning devices are provided for a friction-locking coupling of the half-shells to the respective ends. At least one of the positioning devices is designed to modify an axial attachment position of the half-shells along one of the stems.

A valve assembly having a valve-seal on a valve member that moves between an open and a closed position within a valve support housing for controlling fluid flow, particularly for use as a shut-off valve. In many embodiments, advancing the valve member sealingly engages the valve-seal with a valve seating area of the housing to close the valve and shut-off fluid flow through the housing, while retracting the valve member moves the valve-seal away from the seating area to allow fluid flow around the valve-seal and through the valve-seating area. In many embodiments, the valve member includes a proximal handle and angled ramp that engage with a helical ramp of the housing to translate rotation of the handle into axial movement of the member between open and closed positions.

In a processing machine including a processor having a processing blade and a receiver having a reception member and in which a blade edge of the processing blade and a reception portion, of the reception member, engage with each other to process a paper sheet therebetween, the processing blade is one processing blade selected from a blade group and is attached to the processor so as to be changeable to another processing blade of the blade group, reception portions of kinds corresponding to a plurality of kinds of the processing blades of the blade group are formed on the reception member, and the processing blade attached to the processor is positioned so as to be in a position where the blade edge is engageable with the reception portion of the corresponding kind.

A method and device for the production of books, including: moving book blocks successively along a conveying section of a book production line; supplying a stack of book cases to the book production line; identifying a marking on each of the book blocks and the book cases; transmitting an identified marking on at least one book case to a machine control of the book production line; assigning a dataset stored in the machine control for a sequence of book cases to the supplied stack; determining a sequence in the machine control for book blocks positioned on the conveying section; comparing the dataset for the sequence of the book cases to the sequence of the book blocks; and removing and/or supplying at least one book block from or to the conveying section if the sequence of the book blocks deviates from the sequence of the book cases using the machine control.

A sheet handling apparatus includes a sheet folding unit configured to perform folding on a sheet; and a sheet stacking unit configured to stack the folded sheet on a sheet stacking surface having an inclined surface and a horizontal surface in order from upstream to downstream in a sheet conveying direction. A downstream end of the inclined surface is higher than an upstream end of the inclined surface with respect to a horizontal plane. The sheet handling apparatus also includes a discharging unit configured to discharge the folded sheet to the sheet stacking unit; a sheet conveying unit configured to convey the discharged sheet from the inclined surface to the horizontal surface; and a conveying force applying unit configured to apply a conveying force to the sheet in contact with an upper surface of the sheet from above the inclined surface.

The post-processing device includes: a binding unit that forms a cut in a sheet stack and cuts a part of the sheet stack into a predetermined shape to form a tongue portion in the sheet stack, the tongue portion having a part where one end part of the tongue portion is not separated from the sheet stack, and binds the sheet stack by bending the tongue portion and inserting the other end part of the tongue portion into the cut; and a sheet stack transport unit that transports the sheet stack in an orientation such that the one end part of the tongue portion in the sheet stack bound by the binding unit is on a downstream side of the other end part of the tongue portion in the sheet stack transport direction.

A supply device (10) for a machine for transversely cutting two strips (11 and 12) of a flexible material, in particular a strip of paper, moving continuously, to produce separate stacks of documents cut transversely according to predetermined formats. The device comprises lower and upper driving mechanisms (13, 14) associated with the two strips (11, 12) of flexible material respectively, which each include a mechanically rotated first roller (13a, 14a) and a freely rotatable second bearing roller (13b and 14b). The driving mechanism is mounted on a frame (15) supported by a movable platform (16) which is rigidly connected to a linear actuator (17) arranged to be moved transversely with respect to the direction of movement of the strips (11 and 12). Optical reading cells (11a, 11b, 12a, 12b) define the operating modes of the driving servomotors (13b and 14b) and of the linear actuator (17).

A method of producing a print product comprises: performing digital printing of each surface of the print product, sequentially and repeatedly, on a continuous paper; forming a section by cutting the printing-completed continuous paper into a paper sheet and folding the paper sheet in two; forming a section block by at least one of sections; and folding the section block in two.

A sheet processing device includes a clamp configured to clamp an edge portion of a sheet, the edge portion being on a side of an edge parallel to a direction in which the sheet has been conveyed; a first processing unit configured to perform a first process on the sheet at the side of the edge, the first processing unit being disposed at a first position; a second processing unit configured to perform a second process on the sheet at the side of the edge, the second processing unit being disposed at a second position that is different from the first position in a vertical direction; and a moving unit configured to move the clamp from the first position to the second position or vice versa so that the clamp moves on a loop passing through the first position and the second position.

A creasing device forms a crease in a to-be-folded portion of a sheet. The creasing device includes a sheet-information reading unit that reads any one of sheet information and binding information; a determining unit that determines a surface, on which the crease is to be formed, of the sheet according to the one of the sheet information and the binding information read by the sheet-information reading unit; and a creasing unit that forms the crease on the surface determined by the determining unit.

In the invention, for a first sheet, regardless of the sheet size (width), a lateral registration detector is moved in a direction towards an edge face of the sheet from a home position to detect the edge face of the sheet. With lateral deviation in the sheet position corrected, punching is performed by a puncher. For the second and subsequent sheets, the lateral registration detector is moved in advance to near the edge face of the sheet with reference to the detected position of the sheet edge of the first sheet, and the edge face is detected at a given timing. With lateral deviation in the sheet position corrected, punching is performed by the puncher.

A first discharging portion that discharges a sheet received from one of image forming apparatus and a second discharging portion discharges a sheet received from another image forming apparatus are disposed opposite each other to stack the sheets discharged in a common processing tray. A controller controls the first and second discharging portions when the sheets are continuously discharged by the first and second discharging portions, controls a timing when the sheets are discharged by the first discharging portion and the second discharging portion to the common processing tray such that a leading edge of the sheet discharged from one of the discharging portions abuts on a sheet surface in the downstream of a discharging direction below a leading edge of the sheet discharged from the other discharging portion.

The present invention relates generally to a semiconductor device and, more specifically, to optimizing the creep-age distance of the power semiconductor device and a preparation method thereof. The power semiconductor device includes a chip mounting unit with a die paddle and a plurality of leads arranged side by side located close to one side edge of the die paddle in a non-equidistant manner, a semiconductor chip attached on the die paddle, and a plastic packaging body covering the die paddle, the semiconductor chip, where the plastic packing body includes a plastic extension portion covering at least a part of a lead shoulder of a lead to obtain better electrical safety distance between the terminals of the semiconductor device, thus voltage creep-age distance of the device is increased.

Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) devices are provided, as are MEMS devices. In one embodiment, the MEMS device fabrication method includes forming at least one via opening extending into a substrate wafer, depositing a body of electrically-conductive material over the substrate wafer and into the via opening to produce a via, bonding the substrate wafer to a transducer wafer having an electrically-conductive transducer layer, and forming an electrical connection between the via and the electrically-conductive transducer layer. The substrate wafer is thinned to reveal the via through a bottom surface of the substrate wafer, and a backside conductor is produced over a bottom surface of the substrate wafer electrically coupled to the via.

In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

A method for manufacturing a light-emitting device includes a step of forming an etching resistant protection layer on a substrate provided with an organic planarizing layer, a step of forming a plurality of electrodes on the etching resistant protection layer, a step of forming an organic compound layer on the substrate provided with the plurality of electrodes, a step of forming a resist layer on the organic compound layer formed on parts of electrodes among the plurality of electrodes using a photolithographic method, and a step of removing the organic compound layer in a region not covered with the resist layer by dry etching, wherein an entire surface of the organic planarizing layer on the substrate on which steps up to the step of forming the plurality of electrodes have been performed is covered with at least one of the etching resistant protection layer and the electrode.

A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.

A semiconductor device has a semiconductor wafer with a plurality of contact pads. A first insulating layer is formed over the semiconductor wafer and contact pads. A portion of the first insulating layer is removed, exposing a first portion of the contact pads, while leaving a second portion of the contact pads covered. An under bump metallization layer and a plurality of bumps is formed over the contact pads and the first insulating layer. A second insulating layer is formed over the first insulating layer, a sidewall of the under bump metallization layer, sidewall of the bumps, and upper surface of the bumps. A portion of the second insulating layer covering the upper surface of the bumps is removed, but the second insulating layer is maintained over the sidewall of the bumps and the sidewall of the under bump metallization layer.

It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of the insulator layer from the III-N material layer, and an electrode defining layer on an opposite side of the etch stop layer from the insulator layer. A recess is formed in the electrode defining layer. An electrode is formed in the recess. The insulator can have a precisely controlled thickness, particularly between the electrode and III-N material layer.

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Embodiments generally relate to optoelectronic devices and more specifically, to textured layers in optoelectronic devices. In one embodiment, a method for providing a textured layer in an optoelectronic device includes depositing a first layer of a first material and depositing an island layer of a second material on the first layer. Depositing the island layer includes forming one or more islands of the second material to provide at least one textured surface of the island layer, where the textured surface is operative to cause scattering of light.

Disclosed is a semiconductor device including an oxide semiconductor film. A first oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 15 nm is formed over a gate insulating layer. First heat treatment is performed so that crystal growth from a surface of the first oxide semiconductor film to the inside thereof is caused, whereby a first crystal layer is formed. A second oxide semiconductor film with a thickness greater than that of the first oxide semiconductor film is formed over the first crystal layer. Second heat treatment is performed so that crystal growth from the first crystal layer to a surface of the second oxide semiconductor film is caused, whereby a second crystal layer is formed. Further, oxygen doping treatment is performed on the second crystal layer.

To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

A semiconductor device having favorable electric characteristics and a manufacturing method thereof are provided. A transistor includes an oxide semiconductor layer formed over an insulating layer, a source electrode layer and a drain electrode layer which overlap with part of the oxide semiconductor layer, a gate insulating layer in contact with part of the oxide semiconductor layer, and a gate electrode layer over the gate insulating layer. In the transistor, a buffer layer having n-type conductivity is formed between the source electrode layer and the oxide semiconductor layer and between the drain electrode layer and the oxide semiconductor layer. Thus, parasitic resistance is reduced, resulting in improvement of on-state characteristics of the transistor.

When forming sophisticated semiconductor-based gate electrode structures of transistors, the pre-doping of one type of gate electrode structure may be accomplished after the actual patterning of the electrode material by using an appropriate mask or fill material for covering the active regions and using a lithography mask. In this manner, a high degree of flexibility is provided with respect to selecting an appropriate patterning regime, while at the same time a uniform and superior cross-sectional shape for any type of gate electrode structure is obtained.

A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.

A protective film to a polarizer including a cellulose acylate and satisfying the following requirement (1) or (2): (1): The surface of the film has a pH of from 3.0 to 4.5.(2): The surface of the film has a pH of more than 4.5 and at most 6.0, and the film has a moisture permeability of at least 2800 g/m2·day.