Remotely readable valve position indicators and related methods are described. An example apparatus in accordance with the teachings of this disclosure includes a valve body, a valve stem and a fluid flow control apparatus coupled to the valve stem. The fluid flow control apparatus is longitudinally displaceable between a first position and a second position to control fluid flow through a flow aperture of the valve body. The apparatus also includes a valve position indicator including an identifier device coupled to the valve stem. In the first position, the wireless identifier device associated with a first value indicative of the first position of the fluid flow control apparatus. In the second position, the wireless identifier device associated with a second value indicative of the second position of the fluid flow control apparatus.

A method for configuring and operating one or more fitness studios each comprising a plurality of exercise stations at which users perform associated exercise routines, each station having an associated display, the method comprising, for each fitness studio, periodically retrieving, by a server from a database, fitness information for the studio in question for a specified period, from a multi-period fitness library; communicating, by the server to a studio computer, the retrieved fitness information over a communications network; periodically receiving, by the studio computer, the retrieved fitness information; configuring the exercise stations dependent upon the received fitness information; and communicating, by the studio computer to the exercise station displays, dependent upon the received fitness information, station directions to users exercising at the stations for performing an exercise.

A wrinkle removing apparatus for fabric articles is provided. The apparatus includes a casing defining a volume therein and a reservoir received in the casing and containing a liquid for providing treatment to the fabric article. A platen is carried by the casing and defines a plurality of openings for allowing flow-through of liquid. A heater may be proximal the platen for heating the platen to a treatment temperature. A transducer extends into the reservoir and is configured for atomizing the liquid into a vapor.

The invention relates to a method and a device for removing and drawing a synthetic thread to form a fully drawn yarn. The thread is formed by joining a plurality of extruded filaments and is guided by contact on the circumference of heated guide jackets of several driven galette pairs. In order to obtain a gentle and highly homogenized treatment of the filaments, the thread is guided in an S-shaped or Z-shaped thread course by a first galette pair having two guide jackets driven in opposite directions during the removal from a spinning zone and before the drawing. Thus, both sides of the thread can be brought directly into circumferential contact with the guide jackets for in order to heat the thread.

The spinning station of a spinning machine includes a yarn end disposal means, arranged between the outlet of the spinning device and the winding device, and with the aid of which an end section of the produced yarn is separated from the rest of the yarn and eliminated. Furthermore, a process for removing an end section of a yarn at a spinning station of a spinning machine prior to the subsequent piecing process is proposed, wherein the end section is gripped, cut off, and subsequently eliminated from the area of the spinning station with the aid of a yarn end disposal means arranged between the outlet of the spinning device and the winding device.

This invention provides for a vegetation removal system capable of removing vegetation from irrigation canals, rivers, ponds, lakes, marshes and other water systems where the growth of vegetation impedes the flow of water, access to water or there is a desire to remove unwanted vegetation. The vegetation removal system comprises a rake system that allows for the removal of the vegetation while letting the water and silt or mud flow through the rake and substantially remain as part of the bank or bottom of the body of water. The invention also allows for the folding of the vegetation removal rake into a compact form by folding the outboard wings over on top of the main rake section. Sensors attached to the vegetation removal system can provide situational awareness for the operator as well as determine the position orientation of the rake when the rake is submerged or working near obstacles.

An improved apparatus for removing snow and ice from the roof top of a truck, trailer, bus or similar vehicle is mounted atop a conventional flatbed trailer for ease of relocation from one site to another for use. The addition of a height adjustable scraper or plow blade that is operator controlled to remain in contact with the roof of the vehicle being cleaned is provided with a self-contained front-to-back and side-to-side stabilization mechanism to prevent damage to the tops of vehicles by gouging or tearing the roof top.

A removable plow attachment for a snow blower or thrower is provided. A plow attachment includes a plow member and hook-shaped brackets. The plow member is an arcuate shaped member configured for moving or plowing loose material such as snow, slush, etc. The plow member is removably coupled to the snow blower by the hook-shaped brackets and fasteners. L-shaped angling members are provided on the plow member. The brackets and the L-shaped angling members are configured so that the angle of the plow member relative to the snow blower and the surface being plowed can be adjusted.

A removable device for attaching two mechanical parts includes a pin removably locking a first part with respect to a second part, a retainer member on the pin and a resiliently loaded tension member which collaborate to prevent the pin from coming out of its locked position; the removable device further includes at least two inclined surfaces, the general shape of which is that of a projection oriented in the axial direction of the pin, such that when the pin rotates, the retainer member runs along the inclined surfaces and the pin moves between the locked position and unlocked position against a force exerted on the pin along a longitudinal axial direction of the pin exerted by the tension member.

An apparatus for facilitating the storage of equipment such as ladders in the upper area, but particularly in the upper area on the outside of emergency vehicles such as trucks which includes a capability of moving the ladder to an extended lower deployed position to facilitate immediate access thereto by emergency workers such as firemen. An outer bracket is connected to an inner housing through a parallel linkage with the inner housing attached to the vehicle and the outer bracket attachable to the equipment. The outer bracket includes a downwardly extendable sliding carriage to facilitate positioning of the equipment at a lower level for aiding in retrieval thereof utilizing a flexible control arm.

Apparatus and methods are disclosed, such as a method that includes precharging channel material of a string of memory cells in an unselected sub-block of a block of memory cells to a precharge voltage during a first portion of a programming operation. A programming voltage can then he applied to a selected memory cell in a selected sub-block of the block of memory cells during a second portion of the programming operation. The selected memory cell is coupled to a same access line as an unselected memory cell in the unselected sub-block. Additional methods and apparatus are disclosed.

A semiconductor memory device includes first and second memory cells, each of which includes a charge storage layer, a first bit line that is connected to the first memory cell, and a second bit line that is connected to the second memory cell. A writing operation includes multiple loops of a programming operation and a verification operation, and first data is written in the first memory cell, and second data different from the first data is written in the second memory cell through the writing operation. In a first loop of the writing operation, a first voltage is applied to the first bit line and the second bit line is maintained in an electrically floating state during the programming operation, and a verification operation relating to the second data is not performed and a verification operation relating to the first data is performed.

A nonvolatile memory device is provided as follows. A memory cell array includes a plurality of memory cells. An address decoder provides a first verify voltage to selected memory cells among the plurality of memory cells in a first program loop and provides a second verify voltage to the selected memory cells in a second program loop. A control logic determines the second program loop as a verify voltage offset point in which the first verify voltage is changed to the second verify voltage based on a result of a verify operation of the first program loop.

A programmable memory including a self-latching read data path. A sense amplifier senses the voltage level at a bit line, the bit line communicating the data state of a selected memory cell in its associated column. A data latch coupled to the output of the sense amplifier passes the sensed data state. Set-reset logic is provided that receives the output of the data latch in the read data path and, in response to a transition of the data state in a read cycle, latches the data latch and isolates it from the sense amplifier. The set-reset logic resets the data latch at the start of the next read cycle. In some embodiments, a timer is provided so that the latch is reset after a time-out period in a long read cycle in which no data transition occurs.

A radiation hardened memory cell includes an odd number of storage elements configured to redundantly store an input data logic signal. The storage elements include output lines for outputting respective logic signals having respective logic values. A logic combination network receives the respective logic signals and is configured to generate an output signal having a same logic value as a majority of the logic signals output from the storage elements. An exclusive logic sum circuit receives the respective logic signals output from the storage elements and is configured to produce a refresh of the logic data signal as stored in the storage elements when one of the logic signals output from the storage elements undergoes a logic value transition due to an error event.

A read sensing method for an OTP non-volatile memory is provided. The memory array is connected with plural bit lines. Firstly, a selected memory cell of the memory array is determined, wherein one of the plural bit lines connected with the selected memory cell is a selected bit line and the other bit lines are unselected bit lines. Then, the unselected bit lines are precharged to a precharge voltage. Then, the selected bit line is connected with the data line, and the data line is discharged to a reset voltage. After a cell current from the selected memory cell is received, a voltage level of the data line is gradually changed from the reset voltage. According to at least one result of comparing a voltage level of the data line with a comparing voltage, an output signal is generated.

To provide a magnetic element capable of performing skyrmion transfer, a skyrmion memory to which this magnetic element is applied, and a shift register, for example, a magnetic element capable of performing skyrmion transfer is provided, the magnetic element providing a transverse transfer arrangement in which the skyrmion is transferred substantially perpendicular to a current between an upstream electrode and a downstream electrode, and including a plurality of stable positions in which the skyrmion exists more stably than in other regions of a magnet, and a skyrmion sensor that detects a position of the skyrmion.

To provide a magnetic element which can generate a skyrmion, and a skyrmion memory which applies the magnetic element or the like. To provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having a β-Mn type crystal structure. Also, to provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having an Au4Al type crystal structure.

A magnetic element capable of generating and erasing a skyrmion, including a magnet shaped as a thin layer and including a structure surrounded by a nonmagnetic material; a current path provided surrounding an end region including an end portion of the magnet, on one surface of the magnet; and a skyrmion sensor that detects the generation and erasing of the skyrmion. With Wm being width of the magnet and hm being height of the magnet, a size of the magnet, with the skyrmion of a diameter λ being generated, is such that 2λ>Wm>λ/2 and 2λ>hm>λ/2. With W being width of the end region in a direction parallel to the end portion of the magnet and h being height of the end region in a direction perpendicular to the end portion of the magnet, the end region is such that λ≧W>λ/4 and 2λ>h>λ/2.

A nonvolatile memory circuit may include: a cell array including a first region comprising a plurality of first cell groups and a second region comprising a plurality of second cell groups, each of the first and second cell groups having one or more nonvolatile memory cells; and a control unit suitable for controlling the cell array to sequentially output repair addresses of the plurality of cells groups included in a region which is not over used among the first and second regions when one of the first and second regions is over used.

An SRAM includes an SRAM array comprising a plurality of SRAM cells arranged in a matrix. Each of the SRAM cells includes six vertical field effect transistors. The SRAM array includes a plurality of groups of conductive regions extending in the column direction. Each of the plurality of groups of conductive regions includes a first to a fourth conductive region arranged in this order in the row direction, and the first to fourth conductive regions are separated by insulating regions from each other. The first, second and third conductive regions are coupled to sources of first conductive type VFETs, and the fourth conductive region is coupled to sources of second conductive type VFETs. The plurality of groups are arranged in the row direction such that the fourth conductive region of one group of conductive regions is adjacent to the first conductive region of adjacent one group of conductive regions.

A compact CMOS anti-fuse memory cell. In one aspect, an apparatus includes an N− well and an anti-fuse cell formed on the N− well. The anti-fuse cell includes a lightly doped drain (LDD) region deposited in the N− well, an oxide layer deposited on the N− well and having an overlapping region that overlaps the LDD region, and a control gate deposited on the oxide layer, wherein a bit of the anti-fuse cell is programmed when a voltage difference between the control gate and the LDD region exceeds a voltage threshold of the oxide layer and forms a leakage path from the control gate to the LDD region, and wherein the leakage path is confined to occur in the overlapping region.

The invention relates to an integrated circuit (1), comprising: a field-effect transistor (2), comprising:first and second conduction electrodes (201, 202);a channel zone (203) arranged between the first and second conduction electrodes;a gate stack (220) arranged vertically in line with the channel zone, and comprising a gate electrode (222);an RRAM-type memory point (31) formed under the channel zone, or formed in the gate stack under the gate electrode.

Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3·λ>Wm≧λ, where λ denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2·λ>Hm≧λ, and the magnet has a notch structure at the edge between the upstream electrode and the downstream electrode.

A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.

Examples of the present disclosure provide apparatuses and methods for performing shift operations in a memory. An example method comprises performing a shift operation a first element stored in a first group of memory cells coupled to a first access line and a number of sense lines of a memory array and a second element stored in a second group of memory cells coupled to a second access line and the number of sense lines of the memory array. The method can include shifting the first element by a number of bit positions defined by the second element by performing a number of AND operations, OR operations, SHIFT operations, and INVERT operations performed without transferring data via an input/output (I/O) line.

A memory circuit may be provided. The memory circuit may include a memory array. The memory circuit may include an input and output path circuit coupled to a probe pad and a bump pad, and may be configured to input and output a signal between an exterior of the memory circuit and the memory array. The memory circuit may include a scanning circuit configured to generate a sensing signal by sensing a signal outputted through the bump pad while performing scanning of at least one of a reference voltage and a test strobe signal.

A circuit and method for adaptive trimming of the reference signal for sensing data during a read operation of magnetic memory cells to improve read margin for the magnetic memory cells. The circuit has a trim one-time programmable memory array programmed with offset trim data applied to magnetic memory array sense amplifiers. Sense amplifier trimming circuits receive and decode the trim data to determine offset trim signal magnitude to adjust the reference signal to improve the read margin. The method sets the offset trim level to each increment of the offset trim level. Data is written and read to the magnetic memory array, the number of errors in the array is accumulated for each setting of the offset trim level. The error levels are compared and the appropriate trim level is programmed to the trim memory cells such that a read margin of the sense amplifier is improved.

Systems, devices and methods are disclosed. In an embodiment of one such method, a method of decoding received command signals, the method comprises decoding the received command signals in combination with a signal provided to a memory address node at a first clock edge of a clock signal to generate a plurality of memory control signals. The received command signals, in combination with the signal provided to the memory address node at the first clock edge of the clock signal, represent a memory command. Furthermore, the signal provided to the memory address node at a second clock edge of the clock signal is not decoded in combination with the received command signals. The memory command may be a reduced power command and/or a no operation command.

An address generation circuit may include: a first latch unit suitable for latching an address obtained by inverting a part of an input address; a second latch unit suitable for latching the partly inverted input address of the first latch unit, and suitable for latching an added/subtracted address after a first refresh operation during a target refresh period; a third latch unit suitable for latching the partly inverted input address of the first latch unit during a period other than the target refresh period; and an addition/subtraction unit suitable for generating the added/subtracted address by adding/subtracting a predetermined value to/from the latched address of the second latch unit.

A semiconductor memory device may include: a plurality of memory mats; and a plurality of sense amplifier arrays arranged alternately with the memory mats, each sense amplifier array being suitable for sensing and amplifying data of memory mats adjacent thereto, wherein during a data sensing operation to a memory mat among the plurality of memory mats, in addition to a sense amplifier for the memory mat and sense amplifiers positioned immediately above and below the sense amplifier for the memory mat, at least one additional sense amplifier closest to the sense amplifier for the memory mat is also activated for providing additional amplification.

Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

An apparatus includes a first terminal configured to communicate data with an outside of the apparatus, a second terminal configured to receive a first power source potential, a third terminal configured to receive a second power source potential lower than the first power source potential, a fourth terminal configured to be coupled to a calibration resistor, an output buffer including first to third nodes coupled to the first to third terminals respectively, and a replica circuit including fourth and fifth nodes coupled to the second and third terminals respectively, and sixth node coupled to the fourth terminal.

A semiconductor memory device may include: a memory bank comprising a plurality of word lines; a smart command generation unit suitable for generating a smart refresh command, which is enabled at a random cycle, in response to an active command; and a refresh operation control unit suitable for performing a refresh operation to at least one of adjacent word lines of a target word line among the plurality of word lines in response to the smart refresh command.

A refresh controller of a memory device may include a timing controller, a refresh counter and an address generator. The timing controller generates a counter refresh signal in response to receiving a refresh command provided from an external device, and generates a hammer refresh signal that is activated periodically. The refresh counter generates a counter refresh address signal in response to the counter refresh signal, such that the counter refresh address signal represents a row address, the refresh counter being configured sequentially change the counter refresh address signal. The address generator generates a hammer refresh address signal in response to the hammer refresh signal, the hammer refresh address signal representing an address of a row of the memory device that is physically adjacent to a row of the memory device corresponding to a hammer address that is accessed intensively.

A device including a memory cell and write assist circuit is disclosed. The memory cell includes a first inverter and a second inverter cross-coupled with the first inverter. The write assist circuit is coupled to the memory cell. During a write operation of the memory cell, the write assist circuit is configured to adjust a voltage level of an operational voltage provided to the first inverter or the second inverter by a bias voltage difference.

A bit line architecture for dual-port static random-access memory (DP SRAM) is provided. An array of memory cells is arranged in rows and columns, and comprises a first subarray and a second subarray. A first pair of complementary bit lines (CBLs) extends along a column, from a first side of the array, and terminates between the first and second subarrays. A second pair of CBLs extends from the first side of the array, along the column, to a second side of the array. The CBLs of the second pair of CBLs have stepped profiles between the first and second subarrays. A third pair of CBLs and a fourth pair of CBLs extend along the column. The first and third pairs of CBLs electrically couple to memory cells in the first subarray, and the second and fourth pairs of CBLs electrically couple to memory cells in the second subarray.

According to one embodiment, a semiconductor storage apparatus includes a memory cell array and a read circuit. The memory cell array includes a memory cell which is connected to a word line. A threshold voltage of the memory cell corresponds to a data value of multiple bits. The read circuit receives designation of one bit among the multiple bits, applies a first reading voltage and a second reading voltage corresponding to the designated bit to the word line, senses ON or OFF of the memory cell for each reading voltage, and outputs a first sensed value and a second sensed value after performing the sensing for each reading voltage. The first sensed value is a sensing result in a case where the first reading voltage is applied. The second sensed value is a sensing result in a case where the second reading voltage is applied.

A method is provided for a reading memory even if there is a threshold voltage in an overlapped threshold voltage (VTH) region between a first state distribution and a second state distribution. The method includes ramping a bias on a memory cell a first time to determine a first threshold voltage (VTH1) of the memory cell and determining whether the VTH1 is within the overlapped VTH region. Upon determination that the memory cell is within the overlapped VTH region, the method further includes applying a write pulse to the memory cell; ramping a bias on the memory cell a second time to determine a second threshold voltage (VTH2); and determining the state of the memory cell prior to receiving the write pulse based on a comparison between the VTH1 and the VTH2.

A memory device includes a first string and a second string. The first string includes first and second transistors and first cell transistors coupled in series between a source line and a bit line. The second string includes third and fourth transistors and second cell transistors coupled in series between the source line and the bit line. During a read, a gate of the fourth transistor is applied with a voltage to turn off the transistor, and after start of application of voltages to the first cell transistors, the gate of the fourth transistor is applied with a voltage substantially the same as a voltage applied to the source line.

A method of operating a nonvolatile memory device includes: first programming a target transistor of a cell string of the nonvolatile memory device, wherein the target transistor has a first threshold voltage distribution after the first programming, and wherein the cell string includes a plurality of transistors; and second programming the target transistor of the cell string, wherein the first transistor has a second threshold voltage distribution after the second programming, wherein a width of the second threshold voltage distribution is less than a width of the first threshold voltage distribution.

According to one embodiment, a first well of the first conductivity type which is formed in a substrate. a second well of a second conductivity type which is formed in the first well. The plurality of memory cells, the plurality of first bit line select transistors, and the plurality of second bit line select transistors are formed in the second well, and the plurality of first bit line select transistors and the plurality of second bit line select transistors are arranged on a side of the sense amplifier with respect to the plurality of memory cells of the plurality of bit lines.

According to one embodiment, a semiconductor memory device includes: first to third pages; first to third word line; and row decoder. In data writing, data is written into the first page before data is written into the second page. The row decoder is configured to apply first to third verify voltages to the gates of the first to third memory cells in a program verify operation.

A memory system may include a memory device including 0th to N-1th memory blocks, wherein N is a positive integer; and a controller having a first list and a second list, wherein the first list includes 0th to N-1th erase count values respectively for the 0th to N-1th memory blocks, wherein the second list includes 0th to N-1th difference values respectively for the 0th to N-1th memory blocks, wherein each of the 0th to N-1th difference values is a difference between an average value of the 0th to N-1th erase count values and each of the 0th to N-1th erase count values, wherein the controller selects a source block and a target block among the 0th to N-1th memory blocks depending on the 0th to N-th erase count values included in the first list and the 0th to N-1th difference values included in the second list to perform a wear leveling between the source block and the target block.

Semiconductor memory devices are provided. The semiconductor memory device includes an input/output (I/O) drive controller, a data I/O unit and a data transmitter. The input/output (I/O) drive controller generates drive control signals and an input control signal for driving first and second global I/O lines in a first test mode or a second test mode. The data I/O unit drives the first global I/O line in response to an input data when a write operation is executed in the first test mode and to drive the first and second global I/O lines in response to the drive control signals when the write operation is executed in the second test mode. The data transmitter transfers the data on the first global I/O line onto first and second local I/O lines to store the data on the first global I/O line in a memory cell array portion when the write operation is executed in the first test mode. The data transmitter also transfers the data on the first and second global I/O lines onto the first and second local I/O lines to store the data on the first and second global I/O lines in the memory cell array portion when the write operation is executed in the second test mode. Related methods are also provided.

An integrated circuit may include nonvolatile memory suitable for outputting stored data during the boot-up operation, one or more registers suitable for receiving the data output by the nonvolatile memory and storing the received data when the boot-up operation is performed, and one or more internal circuits suitable for operating using the data stored in the one or more registers. In no-update mode, although the boot-up operation is performed, a data update from the nonvolatile memory to the registers may not be performed.

A remote maintenance system includes a maintenance management apparatus connected to a user apparatus and a communication relay apparatus connected to a remote-controlled apparatus. The maintenance management apparatus transmits, to the communication relay apparatus, message data whose destination is unique identification information of a mobile communication network assigned in advance to the communication relay apparatus. The communication relay apparatus notifies the maintenance management apparatus of an IP address that is dynamically assigned to itself upon reception of the message data. The maintenance management apparatus transmits, to the communication relay apparatus, information on remote operation received from the user apparatus whose destination is the notified IP address. The communication relay apparatus relays, to the remote-controlled apparatus, the information on the remote control received from the maintenance management apparatus.

A query statement, issued to a local database server, is re-written. The query references at least one of a first or a second object. The first object is remote with respect to the local database server, for accessing a first materialized view that is local or remote with respect to the local database server. The second object is local with respect to the local database server, to access a second materialized view that is remote with respect to the local database server. Rewriting the query can include dynamically tracking a staleness state associated with one or more of the materialized views.

An instrument and method for determining the location of the anatomical epicondylar axis between the condyles of a femur is provided. The instrument includes first and second gauges each for measuring a radius of a femoral condyle and a frame. At least one of the gauges is movably connected to the frame. The method includes positioning the measuring end of each gauge against a separate condyle of a femur, actuating a pivoting member of each gauge to determine the radius of each condyle, measuring the distance between the condyles, and determining the location of the anatomical epicondylar axis of the femur. A measurement can be taken from a measuring scale provided on the gauge and from another scale provided on the frame. Determining the location of the axis can further include performing a calculation utilizing the radii of the condyles and the distance between the condyles.

The disclosed technology relate to a device and system that include an outdoor power equipment power unit or cart configured to releasably couple a number of different interchangeable attachments or work implements to a common power unit, where some attachments include and/or require operator presence control, while other attachments do not include and/or require operator presence control. The outdoor power equipment power unit includes a power transfer coupling member operatively coupled to the drive shaft and configured to transfer rotational power to the associated attachment; and an operator presence actuation member operatively coupled to the operator presence control member, the operator presence actuation member configured to rotate in response to user actuation of the operator presence control member.