The invention relates to a multi-blade solid carbide drill for cutting high-strength sandwich materials. The tool comprises a shaft section and an adjoining cutting part, into which a number of chip flutes that corresponds to the number of main blades is incorporated. In order to reinforce the curvature of the resulting chip, the chip flute of the drill comprises a chip flute rib in the region of the chip formation zone, said rib protruding from the chip flute surface and having a substantially wave-shaped cross-section (28), and said rib dividing the chip flute into two sections, a first chip flute section (30) forming the cutting rake and a second chip flute (32) forming the chip flute runout.

A composite resistor includes a thin film resistor element having a first temperature coefficient of resistance and a metal resistor element having a second temperature coefficient of resistance. A portion of the metal resistor element overlaps a portion of the thin film resistor element such that the portion of the metal resistor element is in thermal communication with the portion of the thin film resistor element to compensate for a resistance drift arising during operation of the composite resistor.

Provided is a technique to secure compositional or microstructural uniformity of a ceramic sintered body while increasing the area of the ceramic sintered boy, thus improving basic performance including non-linearity, maximum withstand energy and aging characteristics. A plurality of small varistor pieces 11 and insulating resin are kneaded and extruded for shaping, whereby a sheet-form varistor layer 13 can be formed where a plurality of small varistor pieces 11 are spaced from one another and are aligned on the same plane, and the adjacent small varistor pieces 11 are bonded via insulating resin.

A chip thermistor has a thermistor portion including a ceramic material containing respective metal oxides of Mn, Ni, and Co as major ingredients; a pair of composite portions including a composite material of Ag—Pd, and respective metal oxides of Mn, Ni, and Co and arranged on both sides of the thermistor portion so as to sandwich in the thermistor portion between the composite portions; and external electrodes connected to the pair of composite portions, respectively. In this manner, the pair of composite portions are used as bulk electrodes and, for this reason, the resistance of the chip thermistor can be adjusted mainly with consideration to the resistance in the thermistor portion without need for much consideration to the distance between the external electrodes and other factors.

Provided is a non-linear resistive element which enables to narrow an interval between a plurality of electrodes. A ceramic sheet (2) which constitutes the non-linear resistive element is configured by being supported in a sheet like form by a support member (22) composed of an insulating material. A plurality of ceramic pieces (21) are sectioned and arranged in each of a plurality of unit areas (23) which are apart from each other.

A current sensor packaged in an integrated circuit package to include a magnetic field sensing circuit, a current conductor and an insulator that meets the safety isolation requirements for reinforced insulation under the UL 60950-1 Standard is presented. The insulator is provided as an insulation structure having at least two layers of thin sheet material. The insulation structure is dimensioned so that plastic material forming a molded plastic body of the package provides a reinforced insulation. According to one embodiment, the insulation structure has two layers of insulating tape. Each insulating tape layer includes a polyimide film and adhesive. The insulation structure and the molded plastic body can be constructed to achieve at least a 500 VRMS working voltage rating.

A temperature detector for a contact thermometer of process measurement technology having a thermowell, at least one thermal sensor element arranged in a process-side end of the thermowell, and at least one electrical connecting means connected to the thermal sensor element with a first connection side and extending in the thermowell at least up to an evaluation-side end of the thermowell, so that the thermal sensor element can be electrically contacted via a second connection side of the electrical connecting means, and in which the electrical connecting means is formed by a connection printed circuit board with conducting paths.

A surface mounting varistor for high voltages and current pulses without any risk of burning a mounting board is provided. A covering material for a varistor 1 has a duplex (two layer) structure made from a first mold layer 13 and a second mold layer 15, and a leg with a predetermined height is formed on the bottom of the covering material. As a result, a space (void) formed between a varistor element 2 and a mounting board 20 when the varistor 1 is mounted on the board 20 allows avoidance of the risk of burning the board 20, even if the varistor short-circuits.

Illustrative embodiments of force sensitive input devices and methods are disclosed. In at least one embodiment, an input device may comprise a first input key configured to output a first analog signal as a function of force applied to the first input key, a second input key configured to output a second analog signal as a function of force applied to the second input key, a third input key configured to output a third analog signal as a function of force applied to the third input key, a fourth input key configured to output a fourth analog signal as a function of force applied to the fourth input key, and a controller configured to output movement data including both direction and magnitude in response to the first, second, third, and fourth analog signals, where the movement data is formatted for presentation to a driver of a computing device.

A device for inputting command signals to a marine vessel control system includes a lever that is selectively operable in a joystick mode and a lever mode. In the lever mode, the lever is confined to pivoting about a horizontal axis to thereby input throttle and shift commands to the control system. In the joystick mode, the lever is freely pivotable in all directions away from a vertical axis that is perpendicular to the horizontal axis to thereby input throttle, shift, and directional commands to the control system.

A wiring substrate includes a substrate main body having a first main face and a second main face opposite the first main face; a resistor formed on the first main face; a plurality of first-main-face-side wiring layers which are each formed on the resistor and which each include a grounding metal layer formed of a metal having a resistance lower than that of the resistor and a conductor layer formed on the grounding metal layer; a second-main-face-side wiring layer formed on the second main face; and a via which is formed in the substrate main body and which establishes electrical connectivity between the first-main-face-side wiring layers and the second-main-face-side wiring layer. The wiring substrate further includes a conductive covering layer which covers an upper surface and substantially covers the side surfaces of each of the first-main-face-side wiring layers.

A surface-mountable over-current protection device comprises one PTC material layer, first and second connecting conductors, first and second electrodes and an insulating layer. The PTC material layer has a resistivity less than 0.2 Ω-cm, and comprises crystalline polymer and conductive filler dispersed therein. The first and second connecting conductors are capable of effectively dissipating heat generated from the PTC material layer. The first and second electrodes are electrically connected to first and second surfaces of the PTC material layer through the first and second connecting conductors, respectively. The dissipation factor depending on the ratio of the total area of the electrodes and the conductors to the area of the PTC material layer is greater than 0.6. At 25° C., the value of the hold current of the device divided by the product of the area of the PTC material layer and the number of the PTC material layer is greater than 1A/mm2.

A thermal, flow measuring device for determining and/or monitoring the flow of a measured medium through a measuring tube. The thermal, flow measuring device includes: a first pin-shaped shell and at least a second pin-shaped shell; a first resistance thermometer and at least a second resistance thermometer. At least the first resistance thermometer is embodied so as to be heatable, wherein the resistance thermometers, in each case, have a first surface, and at least a second surface, which lies opposite the first surface. The first pin-shaped shell surrounds the first resistance thermometer, and the second pin-shaped shell surrounds the second resistance thermometer. The pin-shaped shells are fillable with a fill material. In each case, at least one spacer is placeable between the pin-shaped shell and the first surface of the resistance thermometer, and the second surface of the resistance thermometer is at least partially covered with fill material.

A surface mountable over-current protection device having upper and lower surfaces comprises a PTC device, first and second electrodes, and first and second circuits. The PTC device comprises a PTC material layer and first and second conductive layers. The PTC material layer is disposed between the conductive layers and comprises crystalline polymer and conductive filler dispersed therein. The first electrode comprises a pair of first metal foils, whereas the second electrode comprises a pair of second metal foils. The first circuit connects the first electrode and conductive layer, and has a first planar line extending horizontally. The second circuit connects the second electrode and conductive layer, and has a second planar line extending horizontally. At least one of the planar lines has a thermal resistance sufficient to mitigate heat dissipation by which the over-current protection device undergoes a test at 25° C. and 8 amperes can trip within 60 seconds.

One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.

An electromagnetic field measuring apparatus capable of measuring an electromagnetic field for a minuscule area in which electronic devices are densely packed with a high sensitivity is provided. In an electromagnetic field measuring apparatus according to the present invention, the amplitude level of signal light (pf) is adjusted by the analyzer (34) by adjusting its angle with respect to the plane of polarization of the signal light (pf) based on an amplitude level control signal (eb) supplied from the calculation control unit (40). An amplitude level control signal (eb) is supplied from the calculation control unit (40) to the analyzer (34) based on the spectrum (ea) of an electric signal (ed) measured by an RF spectrum analyzer (39). The amplitude level ration between the carrier and the sideband contained in the signal light (ph) incident on the optical receiver (38) is controlled to a fixed value.

An over-current protection device has a PTC device, first and second electrodes and an insulation layer. The PTC device comprises first and second electrically conductive members and a PTC layer laminated between the first and second electrically conductive members. The first and second electrodes are electrically connected to the first and second electrically conductive members, respectively. The insulation layer is disposed on a surface of the first electrically conductive member. The device is a stack structure extending along a first direction, and comprises at least one hole extending along a second direction substantially perpendicular to the first direction. The value of the covered area of the hole divided by the area of the form factor of the over-current protection device is not less than 2%, and the value of the thickness of the device divided by the number of the PTC devices is less than 0.7 mm.

A resistance component includes a stack of ceramic layers and inner electrodes. Inner electrodes of a first type are electrically conductively connected to a first external contact and inner electrodes of a second type are electrically conductively connected to a second external contact. The inner electrodes of the first type are arranged such that there is no overlap with the inner electrodes of the second type. An inner electrode of a third type, which is electrically conductively connected neither to the first external contact nor to the second external contact, at least partially overlaps the inner electrodes of the first type and the inner electrodes of the second type.

In a manufacturing method for a monolithic ceramic electronic component, a plurality of green chips arrayed in row and column directions which are obtained after cutting a mother block are spaced apart from each other and then tumbled, thereby uniformly making the side surface of each of the green chips an open surface. Thereafter, an adhesive is applied to the side surface. Then, by placing a side surface ceramic green sheet on an affixation elastic body, and pressing the side surface of the green chips against the side surface ceramic green sheet, the side surface ceramic green sheet is punched and stuck to the side surface.

A chip resistor includes an insulating substrate, top terminal electrodes formed on top surface of the substrate using silver-based cermet, bottom electrodes, resistive element that is situated between the top terminal electrodes and overlaps them partially, an optional internal protective coating that covers resistive element completely or partially, an external protective coating that covers completely the internal protection coating and partially covers top terminal electrodes, a plated layer of nickel that covers face sides of the substrate, top and bottom electrodes, and overlaps partially external protective coating, finishing plated layer that covers nickel layer. The overlap of nickel layer and external protective layer possesses a sealing property because of metallization of the edges of external protective layer prior to the nickel plating process.

The present disclosure provides a high-temperature thermal pellet composition that maintains structural rigidity up to a transition temperature of about 240° C. The composition comprises at least one organic compound (e.g., triptycene or 1-aminoanthroquinone). The pellet can be disposed in a housing of a thermally-actuated, current cutoff device, such as a high-temperature thermal cutoff device (HTTCO). Also provided are material systems, which include the pellet composition and a high-temperature seal that provides substantial sealing up to at least the transition temperature. Methods of making such high-temperature pellet compositions and incorporating them into a thermally-actuated, current cutoff device are also provided.

The invention relates to a main housing element for a multi-part housing of an electrical device. The main housing element consists of a frame element and at least one connector element integrated in the frame element and produced in one piece with the frame element. The connecting region between the at least one connector element and the frame element is configured as a predetermined breaking point. In the course of assembly of the main housing element a mechanical separation of the connector element from the frame element takes place, whereby the connector element and the frame element are uncoupled.

A controller for a DC motor comprises an output switching element configured to couple to the DC motor; an input switching element coupled to the output switching element; a pulse width modulated (PWM) signal coupled to a control terminal of the input switching element and a supply voltage applied to the output switching element. A resistive-capacitive (RC) network may be coupled to a control terminal of the output switching element, with the RC network being configured to integrate the PWM signal into a DC voltage. A first resistive network may be configured to set a bias for the output switching element when the input switching element is turned off, and a second resistive network may be configured to set the bias for the output switching element when the input switching element is turned on, such that the controller is effective to provide zero-to-full supply voltage control to the DC motor.

It is an object to provide a configuration with an enhanced sensing accuracy, in which a shunt resistance main body and a terminal member are formed as separate pieces. A shunt resistor includes a resistance main body and a terminal member (21) that is electrically connected to the resistance main body. The terminal member (21) includes a resistance connection portion (23) to be in contact with the resistance main body, and a circuit connection portion (24) provided so as to extend from the resistance connection portion (23). The circuit connection portion (24) is divided into two parts by a slit (27) being formed therein. The slit (27) is formed up to a part of the resistance connection portion (23).

Various aspects provide for structures and devices to protect against spurious electrical events (e.g., electrostatic discharge). Some embodiments incorporate a voltage switchable dielectric material (VSDM) bridging a gap between two conductive pads. Normally insulating, the VSDM may conduct current from one pad to the other during a spurious electrical event (e.g., shunting current to ground). Some aspects include gaps having a gap width that is greater than 50% of a spacing between electrical leads connected to the pads. Some devices include single layers of VSDM. Some devices include multiple layers of VSDM. Various devices may be designed to increase a ratio of active volume (of VSDM) to inactive volume.

The power source apparatus is provided with a shunt resistor connected in series with batteries, and a current computation circuit that detects the voltage induced by current flow through the shunt resistor to compute battery current. The shunt resistor is provided with a pair of current flow terminals at two separated points on a metal plate connected in series with the batteries via connecting leads, and a pair of voltage detection terminals on a side of the metal plate between the pair of current flow terminals. Further, the shunt resistor has interval adjustment structures to adjust the distance (L) between attachment points where the connecting leads attach to the pair of current flow terminals. The distance (L) between lead attachment points is adjusted with the interval adjustment structures to finely adjust the voltage induced at the voltage detection terminals due to current flow between the two attachment points.

A method of manufacturing a chip resistor includes forming a resistor assembly in which a conductive member including portions separated from each other in a first direction is provided in a resistance body member; and dividing the resistor assembly into chip resistors, each including a chip-shaped resistance body formed by a part of the resistance body member, a pair of main electrodes formed by a part of the conductive member and separated from each other in the first direction, and a pair of sub-electrodes formed by a part of the conductive member, separated from each other in the first direction, and adjacent to the main electrodes in a second direction perpendicular to the first direction with concave portions recessed in the first direction interposed therebetween, by punching.

The object of the invention is to provide a method and an apparatus that allow production of metal plate chip resistors having a relatively low resistance with high accuracy and yield through simple process. The object is achieved by apparatus for manufacturing metal plate chip resistors including cutting mold for cutting intermediate product strip transversely to obtain worked product chip, ohm meter for measuring the resistance of the worked product chip, control device having a calculating part for performing a calculation using the resistance measured by the ohm meter to work out a width in which the strip is to be cut transversely so as to obtain a worked product chip of a desired resistance, and cutting width adjustor for making an adjustment so that the strip is to be cut transversely in the width obtained from the calculating part.

A spectrometer system for providing information about a target with terahertz radiation. The system may receive incident radiation from the target through fore optics, a slit aperture, secondary optics and a dispersive element which images a slit on an array of terahertz sensitive detectors. The detectors may include uncooled sensors. Each sensor may be connected to its own micro antenna. The array of detectors may be situated proximate to the dispersive element so that radiation from the element may be dispersed according to wavelength to the respective detectors optimally sensitive to the various respective wavelengths. Detector signals indicating the impingement of terahertz radiation may provide information for identifying a material of the target.

An apparatus and method for improved current shunt sensing in an electrical system, such as a renewable energy electrical system, is disclosed. A current shunt according to aspects of the present disclosure includes a conductive portion that is placed in series with an electrical system The current shunt includes a sensing element that is used to measure the voltage across the conductive portion of the current shunt. The sensing element has an increased width relative to the width of the conductive portion of the shunt. The increased width of the sensing element provides for improved current shunt sensing that results in more accurate voltage (and thus current) measurements across a wide range of frequencies.

Provided is a resistive element which has excellent inrush current resistance, and can suppress heat generation in a steady state. The resistive element has an element main body of a semiconductor ceramic in which the main constituent has a structure of R11-xR2xBaMn2O6 in which 0.05≦x≦1.0 when R1 is Nd and R2 is at least one of Sm, Eu and Gd; 0.05≦x≦0.8 when R1 is Nd and R2 is at least one of Tb, Dy, Ho, Er, and Y; 0≦x≦0.4 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Tb, Dy, Ho, and Y; and 0≦x≦1.0 when R1 is at least one of Sm, Eu, and Gd and R2 is at least one of Sm, Eu, and Gd, but the Sm, Eu, and/or Gd in R1 is different from that in R2.

An axial resistance sheathed heater is presented. The axial resistance sheathed heater includes a retaining sheath having a first end and a second end and a resistance wire completely disposed within the retaining sheath. The heater further includes a first conductor rod partially disposed within the retaining sheath and extending beyond the first end of the retaining sheath, the first conductor rod in direct electrical communication and direct mechanical communication with the resistance wire; and a second conductor rod partially disposed within said retaining sheath and extending beyond the second end of the retaining sheath, the second conductor rod in direct electrical communication and direct mechanical communication with the resistance wire. The resistance wire, the first conductor rod and the second conductor rod comprise a circuit achieving a power to voltage rating of about 5000:24.

There is provided an array type chip resistor including: a chip body, four pairs of lower electrodes disposed on both sides of a lower surface of the chip body and formed so as to be extended to edges of the chip body, side electrodes formed so that the lower electrodes are extended to sides of the chip body, and a resistor interposed between the lower electrodes on the lower surface of the chip body and electrically connected to the lower electrode through a contact portion, wherein when a width of the side electrode is defined as d1, a distance between adjacent side electrodes is defined as d2, and a height of the side electrode is defined as h, in the case in which d1/d2 is 0.5 to 1.5, a value of h is 4,300/d1 μm or above and is 0.24d2+87.26 μm or less.

A piezoresistive sensor device and a method for making a piezoresistive device are disclosed. The sensor device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The sensor device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The sensor device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making a piezoresistive sensor device, comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the piezoresistive sensor and associated transducer in ultra high temperature applications.

A heater assembly includes one or more first heating elements, the one or more first heating elements being characterized by a positive temperature coefficient; and one or more second heating elements, the one or more second heating elements comprising resistance wire elements. The one or more second heating elements are positioned in proximity to the one or more first heating elements such that at least one of the one or more second heating elements is configured to, upon being powered on, pre-heat at least one of the one or more first heating elements before the at least one first heating element is powered on.

A surface mount chip resistor for increasing power handling capabilities of radio frequency (RF) circuits and for minimizing parasitic capacitance and inductance effects, the chip resistor includes a ceramic substrate having a main portion and an outrigger. A resistor element is between an input contact and an output contact on a top surface of the main portion. A ground plane attachment area is on a top surface of the outrigger. The ground plane attachment area is mounted to a ground plane of a circuit board to provide a heat pathway for dissipating heat generated by the resistor element.

There are provided a chip resistor and a method of manufacturing the same. The chip resistor includes a ceramic substrate; an adhesion portion formed on a surface of the ceramic substrate; and a resistor formed on the adhesion portion, wherein the adhesion portion includes at least one of copper (Cu), nickel (Ni), and copper-nickel (Cu—Ni).

A surface-mountable over-current protection device comprises a PTC material layer, first and second conductive layers, first and second electrodes, first and second electrically conductive connecting members. The PTC material layer has a resistivity less than 0.18 Ω-cm. The conductive layers are in contact with opposite surfaces of the PTC material layer. The first electrode comprises pair of first metal foils and is insulated from the second conductive layer. The second electrode comprises a pair of second metal foils and is insulated from the first conductive layer. The first electrically conductive connecting member connects to the first metal foils and conductive layer. The second electrically conductive connecting member connects to the second metal foils and conductive layer. The first electrically conductive connecting member comprises 40%-100% by area of the first lateral surface, and the second electrically conductive connecting member comprises 40%-100% by area of the second lateral surface.

An electronic power apparatus is provided, including a circuit board having a conductive pads and a sense pad coupled to an output signal, and an actuator having a wiper portion accommodating a conductive wiper. The wiper includes a first end arranged to engage the sense pad and a second end arranged to slidably engage at least one of the conductive pads on the circuit board. The conductive pads are arranged in a first row of conductive pads and a second row of conductive pads in parallel with and at a distance to the first row of conductive pads. An alignment of the second row of conductive pads is offset with respect to the first row of conductive pads.

A substrate device includes an embedded layer of VSD material that overlays a conductive element or layer to provide a ground. An electrode, connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.

An over-current protection device comprises a PTC material layer, a first electrode layer and a second electrode layer. The PTC material layer has opposite first and second surfaces and opposite first and second lateral surfaces. The first electrode layer is in physical contact with the first surface of the PTC material layer and extends to the first lateral surface. The second electrode layer is in physical contact with the first surface of the PTC material layer and extends to the second lateral surface. The second electrode layer is insulated from the first electrode layer by a first separation. The first electrode layer and the second electrode layer are substantially laterally symmetrical, and serve as interfaces for current flowing in and out of the device when the over-current protection device is in use.

Provided is a non-linear resistive element which improves the degree of freedom of design of its mounting space. A ceramic sheet 10 which constitutes the non-linear resistive element is configured by a plurality of ceramic pieces 11 being consolidated in a plate like form by an insulating resin 12. One or a plurality of ceramic pieces 11 configure each of a plurality of conductive paths which penetrate the ceramic sheet 10 in a thickness direction thereof, and the ceramic pieces 11 which configure both ends of the conductive paths partially projects from the insulating resin 12.

A touch panel includes a touch sensor layer including a first transparent electrode and a second transparent electrode, wherein an arrangement direction of the first transparent electrode can be perpendicular to that of the second transparent electrode, and both of the first and second transparent electrodes include two transparent metallic patterns which are stacked and electrically connected to each other.

A resistive device includes a resistive layer, a flexible substrate arranged on the resistive layer, and an electrode layer. The electrode layer includes two electrode sections arranged below the resistive layer and separate to each other. Moreover, a method for manufacturing the resistive device with flexible substrate is also disclosed.

An elastomeric particle (1, 1, 1″) comprises a non-conducting elastomeric body (2) having an electrically conducting surface (4a, 4b, 6). Pressure sensor elements (20, 20', 20″; 30, 30', 30″, 30'″) comprising such elastomeric particles are disclosed, as well as sensor clusters (50″, 50'″, 50IV, 50V, 50VI, 50VII, 70) comprising such sensor elements. There is also disclosed a pressure sensor element (40, 40', 40″, 40'″, 40IV, 40V, 40VI, 40VII), comprising a resistive element (44, 44', 44″) providing a conduction path, a first electrode (42a, 42a-1, 42a-2, 42a-3, 42a-4, 42a-5, 42a-6), connected to the resistive element, a second electrode (42b, 42b'), which in a quiescent state is spaced from said first electrode, wherein the second electrode, when the pressure sensor element is subjected to a pressure, is arranged to contact said first electrode or said resistive element. Systems comprising such sensor elements and sensor clusters are disclosed, as well as methods of their fabrication.

Provided is a resistive element which is excellent in inrush current resistance even in the case of having a surface-mountable small chip shape. The resistive element has an element main body composed of a semiconductor ceramic in which a main constituent thereof is composed of a Mn compound represented by the general formula (Nd1-xMx)yBazMn2O6 (M is at least one rare-earth element selected from Sm, Gd, Eu, Tb, Dy, Ho, Er, and Y), and x, y, and z respectively meet the conditions of: 0.05≦x≦0.4; 0.80≦y≦1.2; and 0.80≦z≦1.2 in the chemical formula.

A touch sensing apparatus has a plurality of unit regions, and each of the unit regions includes a first substrate, a second substrate and a spacer structure. The first substrate has a first electrode layer thereon. The second substrate is disposed opposite to the first substrate and has a second electrode thereon. The spacer structure is disposed between the first substrate and the second substrate. In particular, there are plural of sensing units in each of the unit regions, and sensing trigger forces of the sensing units in the unit region are not completely the same.

The invention provides a movable contact movable on a fixed contact or a resistor. The movable contact includes first and second sliders. The first and second sliders are arranged in such a manner as to slide along different sliding tracks from each other on the fixed contact or the resistor in accordance with movement of the movable contact.

A surface mountable over-current protection device comprises one PTC material layer, first and second conductive layers, first and second electrodes, and an insulating layer. The PTC material layer comprises crystalline polymer and conductive filler dispersed therein. The first and second conductive layers are disposed on first and second planar surfaces of the PTC material layer, respectively. The first and second electrodes are electrically connected to the first and second conductive layers. The insulating layer is disposed between the first and the second electrodes for insulation. At the melting point of the crystalline polymer, the CTE of the crystalline polymer is greater than 100 times the CTE of the first or second conductive layer, and the first and/or second conductive layers has a thickness which is large enough to obtain a resistance jump value R3/Ri less than 1.4.

An articulated work holder for a fractional dimensioned, performance vehicle including a base member and first, second and third, support arms having multiple degrees of rotational movement and a vise member carrying vehicle engagement pads for supporting a fractional dimensioned, performance vehicle between the vise engagement pads.