A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.

Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.

A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.

A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor.

To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

A method of fabricating a semiconductor device includes forming a gate strip including a dummy electrode and a TiN layer. The method includes removing a first portion of the dummy electrode to form a first opening over a P-active region and an isolation region. The method includes performing an oxygen-containing plasma treatment on a first portion of the TiN layer; and filling the first opening with a first metal material. The method includes removing a second portion of the dummy electrode to form a second opening over an N-active region and the isolation region. The method includes performing a nitrogen-containing plasma treatment on a second portion of the TiN layer; and filling the second opening with a second metal material. The second portion of the TiN layer connects to the first portion of the TiN layer over the isolation region.

A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.

A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP layer formed over the first SiP layer and in the recess, wherein the second SiP layer has a phosphorus concentration higher than that of the first SiP layer.

A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

Provided are superconducting circuits and, more specifically, methods of forming such circuits. A method may involve forming a silicon-containing low loss dielectric (LLD) layer over a metal electrode such that metal carbides at the interface of the LLD layer and electrode. The LLD layer may be formed using chemical vapor deposition (CVD) at a temperature of less than about 500° C. At such a low temperature, metal silicides may not form even though silicon containing precursors may come in contact with metal of the electrode. Silicon containing precursors having silane molecules in which two silicon atoms bonded to each other (e.g., di-silane and tri-silane) may be used at these low temperatures. The LLD layer may include amorphous silicon, silicon oxide, or silicon nitride, and this layer may directly interface one or more metal electrodes. The thickness of LLD layer may be between about 1,000 Angstroms and 10,000 Angstroms.

One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.

A watch comprising a watch case with opposite arranged connecting parts in form of two parallel branches for the mounting of a watch strap or cord between said branches, where said watch further comprises at least one generally T-shaped strap or cord connector comprising a spring loaded sliding bar suited for engaging in holes provided in a surface of each branch facing each other, said T-shaped strap or cord connector further comprises a cord receiving opening being arranged opposite to the spring loaded sliding bar and being an opening adapted to receive a cord having generally round or polygonal cross section, said cord at a first end and a second end being provided with interacting locking parts.

A respiratory mask assembly for delivering breathable gas to a patient includes a frame and at least one locking clip. The frame has a main body and a side frame member provided on each lateral side of the main body, at least one of the side frame members including a locking clip receiver assembly. The at least one locking clip has a main body providing a front portion adapted to be removably coupled with the at least one locking clip receiver assembly and a rear portion adapted to be removably coupled to a headgear assembly. The rear portion includes a cross bar that forms an opening through which a strap of the headgear assembly can pass and be removably coupled with the cross bar, and the front portion includes at least one resiliently flexible spring arm that is flexible within the plane of the main body.

The present disclosure relates to an apparatus for fastening a power semiconductor using an integral springy (elastic) clip, capable of fixing a power semiconductor, such as a diode and a MOSFET, using elasticity of a U-shaped clip by integrally molding the clip onto a housing of a plastic module. The apparatus includes an elastic (springy) clip integrally molded onto a lower surface of the housing and downwardly curved into a U-like shape in a bridge module in which a bridge of the power semiconductor protrudes through a through hole of the housing to be connected to a printed circuit board, whereby the power semiconductor is fixed by a force that the housing presses the power semiconductor.

Providing a slider for a concealed slide fastener, capable of achieving a smooth sliding operation of the slider, even when the slider is applied to a seat cover for a seat and strong lateral pulling force is applied to the slider when the slide fastener is closed. A slider for a concealed slide fastener comprises a slider body having at least a lower blade, left and right side wall portions and left and right first flanges, and slider upper plate member engaged with the slider body and having at least a second flange projecting toward at least the left and right side wall portions.

An exemplary device that is useful for controlling vibrations of an elevator load bearing member includes a guide. A mass is moveable relative to the guide responsive to vibration of the load bearing member to introduce a force to counter the vibration.

A profiled retaining section for positioning a seam connecting two decorative layers includes an upper region, a center region and a lower region forming at least one anchor. The upper region is designed as a piping, or in the manner of a piping, for protruding over a visible side of the skins to be positioned. The center region includes two sides to be sewn to the decorative layers. The anchor is designed to be introduced in a groove having a lesser width than the anchor itself and to exert a force on the groove in the lateral direction. The upper region, the center region and the anchor are integral with each other and arranged in the vertical direction relative to each other. Also described is a composite part that uses the profiled retaining section.

A container system for storing remains is provided, including a rigid storage vessel defining an inner chamber for receiving remains. The system includes at least one display frame member outside the rigid storage vessel for displaying information, such as a picture. A cap is provided proximate the storage vessel, wherein the cap defines at least one storage area for receiving an object.

A process for making a personalized container, such as an urn for ashes, a temporary coffin, or a box for memorabilia, that includes the steps of receiving instructions specifying a personalized panel to be disposed on the container; and disposing the personalized panel, typically by digital ink-jet printing, on a web such as paper, paperboard, film, laminate, or some combination thereof, in accordance with the received instructions. Generally the web, when printed, is continuous, and moving. In subsequent unit operations, the web is separated into web portions, each web portion comprising a personalized panel, with the web portion converted into a personalized container. The personalized container may employ other cues to help evoke memories of one absent, such as a recorded voice, or scent.

A containment device for holding the remains of a cremated individual. The containment device may include a receptacle with a rim section and a containment section. A cap may be sealed on the receptacle once the remains of the cremated individual are within the containment section. The outside of the receptacle may include an attachment component. Therefore, the receptacle may be displayed in one's home for a time and then may be permanently mounted in a memorial site. An anchor may attach to the attachment component to prevent theft.

A carrier is provided for facilitating the carrying and transportation of a funerary container having a bottom surface, a plurality of side surfaces and a top surface, along with a length and width and interior large enough to accommodate an un-cremated corpse. The carrier includes a base member having a length generally long enough to span the width of the funerary container and a upper surface sized and configured for receiving the bottom surface of the funerary container. An upstanding member has a lower end coupled to the base member and an upper end. The upstanding member extends in a plane generally perpendicular to the base member. A handle member is provided that is coupled to the upstanding member. The handle includes a hand receiving surface engageable by the hand of the user.

A contaminated human remains pouch includes a sheet of material that is resistant to chemical and biological agents having a substantially rectangular shape having a first long side, a second long side, a first short side and second short side. Complimentary securing elements are fixed along an edge of the first long side and along an edge of the second long side. A folded portion in each corner of the material forms a first seam between adjacent portions of the first short side and a second seam between adjacent portions of the second short side. The complimentary securing elements on the edge of the first long side and the edge of the second long side define an opening when the folder portion in each corner is folded over, and the complimentary securing elements are configured to be mated together to substantially seal the contaminated human remains pouch from cross-contamination.

In one example, a connector includes: first and second pins protruding from opposite sides of a panel or a frame; first and second receivers on opposite sides of the other of the panel or the frame to receive the first and second pins; a first distance between the receivers shorter than a second distance between the protruding ends of the pins such that the first pin may be inserted into the first receiver and then the second pin inserted into the second receiver but both pins may not be inserted simultaneously into the receivers; and a movable retainer integral to the panel and the frame to retain the pins in the receivers. The retainer is movable between a first position to limit axial travel of the pins in the receivers and a second position to not limit axial travel of the pins in the receivers.

A portable electronic device includes a lower housing and an upper housing slidable relative to the lower housing between closed and open positions. The upper housing includes an auxiliary input device and a display. A primary flex connector electrically connects the lower and upper housings. At least one secondary flex connector may electrically connect the primary flex connector to the auxiliary input device or the display. The upper housing may include a cover plate that is removable to allow access to at least a portion of the flex connectors.

A lock assembly includes a coupling mechanism connected to a spindle assembly. The coupling mechanism has an outer sleeve having a longitudinal interior opening that extends along a first axis. An operator handle includes a proximal lock core opening, and a distal shaft portion having an axial opening configured to receive the outer sleeve. The distal shaft portion and the outer sleeve are configured to define a through path oriented across the longitudinal interior opening of the outer sleeve. A portion of the through path at the outer sleeve is configured to threadably receive a setscrew to fasten the operator handle to the outer sleeve. A keyed lock core has a tailpiece that is positioned in the longitudinal interior opening of the outer sleeve to obstruct the through path and block access to the setscrew via the through path to prevent unauthorized removal of the operator handle.

A brake caliper is provided with a timing and retraction controller, a brake pad and a lock-connection comprising an engaging component and a locking component. The timing and retraction controller adjusts brake timing, eliminates parasitic brake losses and dampens out-of-plane vibration between the brake pad and rotor. The brake caliper includes a housing disposed over a brake rotor; first and second opposing brake pads extendably and retractably mounted on opposite sides of the caliper housing, brake pistons that extend and retract the brake pads into and out of frictional engagement with the rotor, and brake pad timing and retraction controllers disposed on opposite sides of the caliper housing. Each controller includes a Belleville spring or other resilient member with a short compression travel limited to between about 1.50 mm and 0.025 mm. The short stroke Belleville spring of each controller applies a hold-off force against the extension force of the brake pistons that slightly delays brake pad extension and slightly reduces brake pad clamping force against the rotor, thereby advantageously providing a front wheel braking bias when applied to the rear wheels of a vehicle. The restorative force applied by the short stroke Belleville forcefully and uniformly retracts the brake pad from the rotor, eliminating parasitic brake losses, and dampening out-of-plane vibration between the brake pad and rotor.

A method of treating a carbon structure is provided. The method may include the step of infiltrating the carbon structure with a ceramic preparation comprising yttrium oxides and zirconium oxides. The carbon structure may be densified by chemical vapor infiltration (CVI) and heat treated to form yttrium oxycarbides and/or carbides and zirconium oxycarbides and/or carbides. Heat treating the carbon structure may comprise a temperature ranging from 1000° C. to 1600° C.

An energy conversion process that exports by-product CO2 at elevated pressure where a fuel gas feed stream is mixed with a reactant stream and additional CO2 is added to at least part of, the fuel gas feed stream, the reactant stream or both through desorption by contacting with a CO2-rich solvent stream in a first stage contactor to produce a mixed feed gas stream and a CO2-lean solvent stream; passing said mixed feed gas stream to a chemical conversion step, where further CO2 is produced; chilling at least part of the products of said chemical conversion step and thereby produce a CO2-lean gas stream; and passing at least part of said CO2-lean gas stream said to a second stage contactor where further CO2 is removed, by absorption, to produce a product gas stream and a solvent stream rich in CO2 from which said CO2-rich solvent stream is subsequently derived.

The present application provides a back mixing device for use with a pneumatically conveyed flow of solids having a varying flow rate. The back mixing device may include a nozzle, a chamber in communication with the nozzle, and an exit. The chamber may include an expanded area leading to a restriction such that the chamber creates a recirculation pattern in the flow of solids so as to smooth the varying flow rate though the back mixing device.

A gas generator and process for converting a fuel into an oxygen-depleted gas and/or hydrogen-enriched gas. The gas generator is preferably used for generating protection gas or reducing gas for start up, shut down or emergency shut down of a SOFC or SOEC. The process for converting fuel into oxygen-depleted gas and/or a hydrogen-enriched gas includes combusting the fuel in a primary catalytic burner with an oxygen-containing gas to produce a flue gas with oxygen, combusting or partially oxidizing the flue gas comprising oxygen with excess fuel in a secondary catalytic burner to produce a gas with hydrogen and carbon monoxide, and reducing the trace amounts of oxygen from the gas comprising traces of oxygen and obtaining an oxygen-depleted gas, or reducing the carbon monoxide present in the gas by conversion to carbon dioxide or methane to obtain a hydrogen-enriched gas.

An integrated reformer and combustion apparatus for use in a fuel cell system comprises at least one reformer plate (3) at which in use a reforming reaction can take place and at least one combustion plate (1) at which in use a combustion reaction can take place. The plates are arranged in a stack such that the reformer plates (3) and combustion plates (1) are interspersed. The apparatus is arranged such that in use a reforming reaction and a combustion reaction can take place simultaneously, the combustion reaction providing heat for the reforming reaction. A further fluid circuit (19, 29) may be provided in thermal communication with at least one of the reformer unit and the combustion unit so as to allow the temperature of that unit to be controlled.

A solids circulation system receives a gas stream containing char or other reacting solids from a first reactor. The solids circulation system includes a cyclone configured to receive the gas stream from the first reactor, a dipleg from the cyclone to a second reactor, and a riser from the second reactor which merges with the gas stream received by the cyclone. The second reactor has a dense fluid bed and converts the received materials to gaseous products. A conveying fluid transports a portion of the bed media from the second reactor through the riser to mix with the gas stream prior to cyclone entry. The bed media helps manipulate the solids that is received by the cyclone to facilitate flow of solids down the dipleg into the second reactor. The second reactor provides additional residence time, mixing and gas-solid contact for efficient conversion of char or reacting solids.

A system, including a gasifier comprising a wall defining a chamber, an inlet, an outlet, and a port, a combination feed injector coupled to the inlet, wherein the combination feed injector is configured to inject a first fuel and air or oxygen into the chamber to preheat the gasifier, and the combination feed injector is configured to inject a second fuel and oxygen into the gasifier after preheating to gasify the second fuel, an optical device coupled to the port, a sensor coupled to the optical device, and a monitoring system coupled to the sensor, wherein the monitoring system is configured to acquire data from the sensor, process the data, and provide an output representative of a condition of the gasifier based on the data.

Methods are disclosed for generating electrical power from a compound comprising carbon, oxygen, and hydrogen. Water is combined with the compound to produce a wet form of the compound. The wet form of the compound is transferred into a reaction processing chamber. The wet form of the compound is heated within the reaction chamber such that elements of the compound dissociate and react, with one reaction product comprising hydrogen gas. The hydrogen gas is processed to generate electrical power.

An electrical connector has two portions, a first portion connectable to a device and a second portion having a contact point which is movable in relation to the first portion. The second portion having the contact point comprises a magnet configured to attract the corresponding connector. The contact point does not require a counteracting force, whereby the side magnets may be smaller or the connector may lack the side magnets entirely.

Disclosed are electronic devices and connectors, including: a first main body, a second main body; the first magnet being arranged at a first end of the first main body and the second magnet being arranged at a second end of the second main body; the first magnet having a magnetic property opposite that of the second magnet; the first main body being pluggably connected to the second main body through the interaction between the first magnet and the second magnet; the first number of spacers is arranged at a preset position of the first magnet, and the first number of spacers is arranged at a preset positions of the second magnet; and the spacers are non-magnetic. Other embodiments, including manufacturing methods, are described and claimed.

The invention provides a M.2 interface memory device and a M.2 interface connection seat insertedly provided thereof. The M.2 interface memory device comprises a M.2 interface card and a housing provided with at least one guide groove. The M.2 interface connection seat is disposed on a circuit board, and comprises two arms and a base comprising a M.2 interface slot. At least one arm is provided with a guide rail. An opening direction of the M.2 interface slot is horizontal to a surface of the circuit board. When the M.2 interface card is inserted into the M.2 interface slot in a horizontal direction, the M.2 interface memory device will be fixed within the M.2 interface connection seat by embedding between the guide groove and the guide rail. Thus, M.2 interface memory devices of a variety of specification lengths are able to be inserted into the M.2 interface connection seat.

Connector latch used to securely hold together a connector apparatus, such that the connector apparatus has at least a first connector assembly and a second connector assembly which can be mated together. Initially, after the connector latch is manufactured, the connector latch is in an undeflected position. After manufacture, the connector latch is subjected to a pre-mating deflection process, in order to move the connector latch into a preloaded position. After the pre-mating deflection process has been completed, the connector latch is locked in the preloaded position. The preloaded connector latch provides a number of desirable characteristics, including at least an extra loud “click” sound when the first connector assembly and the second connector assembly are mated together.

A connector includes a connector main member and an operation member. The operation member covers the connector main member at least in part in a plane perpendicular to a front-rear direction, The operation member is movable between a front limitation position and a rear limitation position. The operation member has, therein, a front regulating portion accommodation portion accommodating the front regulating portion, and an operated portion accommodation portion accommodating the operated portion. The front regulating portion accommodation portion is provided, therein, with a front regulated portion which is brought into abutment with the front regulating portion when the operation member is positioned at the front limitation position. When the operation member is moved to the rear limitation position, the operated portion accommodation portion is provided, therein, with an operating portion which presses the operated portion inward of the connector main portion and moves the lock portion to a released position.

In one example an electronic device comprises at least one electronic component, a chassis comprising a first section, a connector to connect the first section of the chassis to a second section, the connector comprising a housing defining a first shaft, a retention structure disposed in the shaft, and a plurality of electrical contacts positioned within a corresponding plurality of channels in the retention structure. Other examples may be described.

Connector latch used to securely hold together a connector apparatus, such that the connector apparatus has at least a first connector assembly and a second connector assembly which can be mated together. Initially, after the connector latch is manufactured, the connector latch is in an undeflected position. After manufacture, the connector latch is subjected to a pre-mating deflection process, in order to deflect the connector latch into a preloaded position. After the pre-mating deflection process has been completed, the connector latch is locked in the preloaded position. The preloaded connector latch provides a number of desirable characteristics, including at least an extra loud “click” sound when the first connector assembly and the second connector assembly are mated together.