An exhaust gas recirculation device is provided. The device recirculates, from an exhaust system to an intake system, a part of exhaust gas from a plurality of cylinders of a multi-cylinder engine as EGR gas. The device includes a single EGR pipe extending from the exhaust system toward the intake system, an EGR manifold branching from a downstream end portion of the EGR pipe toward each cylinder, and an EGR valve for adjusting an EGR gas amount. The EGR manifold has one or more common EGR passages having a single pipe portion and branched pipe portions, and one or more independent EGR passages. Each shape of the common and independent EGR passages is set so that a communicating path in the EGR manifold communicating an arbitrary cylinder with a cylinder where combustion is performed subsequently thereto has the same volume for any cylinder combination having the adjacent combustion order.

As one example, a fuel rail assembly for supplying pressurized fuel to a plurality of cylinders of an engine is provided. The fuel rail assembly includes a fuel rail housing defining an internal fuel rail volume having at least a first region and a second region; a fuel separation membrane element disposed within the fuel rail housing that segregates the first region from the second region. The membrane element can be configured to pass a first component of a fuel mixture such as an alcohol through the membrane element from the first region to the second region at a higher rate than a second component of the fuel mixture such as a hydrocarbon. The separated alcohol and hydrocarbon components can be provided to the engine in varying relative amounts based on operating conditions.

According to the present disclosure, a fuel supply system having a recirculation loop is provided. The fuel supply system comprises a fuel tank; a return line coupled fluidly to the fuel tank; a fuel manifold; and a recirculation loop, wherein the return line is coupled fluidly to the recirculation loop at a first node to return fuel from the recirculation loop to the fuel tank, and the recirculation loop comprises a heat exchanger positioned downstream of the fuel manifold and upstream of the first node. The recirculation loop may comprise an orifice positioned upstream of the heat exchanger and downstream of the fuel manifold. Additionally, the fuel supply system may further comprise a supply line coupled fluidly to the fuel tank and further coupled fluidly to the recirculation loop at a second node positioned upstream of the fuel manifold and downstream of the first node.

Embodiments of systems and methods for tuning a turbine are provided. In one embodiment, a method may include receiving at least one of a measured operating parameter or a modeled operating parameter of a turbine during operation; and tuning the turbine during operation. The turbine may be tuned during operation by applying the measured operating parameter or modeled operating parameter or parameters to at least one operational boundary model, applying the measured operating parameter or modeled operating parameter or parameters to at least one scheduling algorithm, comparing the output of the operational boundary model or models to the output of the scheduling algorithm or algorithms to determine at least one error term, and closing loop on the one error term or terms by adjusting at least one turbine control effector during operation of the turbine.

In an engine having a plurality of cylinders in which a plurality of fuel injection valves are provided respectively, fuel is injected at a predetermined injection ratio, and an abnormality of air-fuel ratio variation is detected. If a fuel injection amount of at least one of the plurality of the fuel injection valves is smaller than a predetermined reference value, the fuel injection amount is increased so as to become equal to or larger than the reference value.

Methods and systems are provided for reducing late burn induced cylinder pre-ignition events. Forced entry of residuals from a late burning cylinder into a neighboring cylinder may be detected based on engine block vibrations sensed in a window during an open exhaust valve of the late burning cylinder. In response to the entry of residuals, a pre-ignition mitigating action, such as fuel enrichment or deactivation, is performed in the neighboring cylinder.

A variable valve operating apparatus for an internal combustion engine includes a drive camshaft, and a driven cam lobe that is rotatably supported by the drive camshaft. The variable valve operating apparatus further includes a control sleeve that has a raceway surface, a center of which is eccentric with respect to a center of rotation of its own. The variable valve operating apparatus further includes a link mechanism that is connected to each of the drive camshaft and the driven cam lobe and has a control roller which is in contact with the raceway surface. The variable valve operating apparatus further includes an actuator that drives the control sleeve. The variable valve operating apparatus further includes a control amount of the actuator is controlled to change a moving amount of the raceway surface in the above described plane direction in accordance with an operation condition of an internal combustion engine.

An intake apparatus of an engine includes: a first intake passage supplying fresh air to a cylinder; a second intake passage arranged near the first intake passage, and supplying fresh air to the cylinder; a first intake valve opening and closing the first intake passage at an aperture of the first intake passage; a second intake valve opening and closing the second intake passage at an aperture of the second intake passage. An opening timing of the first intake valve of the intake apparatus advances relative to a top dead center, and a valve lift amount of the first intake valve differs from that of the second intake valve, and there is a period while the valve lift amount of the first intake valve is larger than that of the second intake valve, in an intake stroke.

Method and system for operating a compression engine on ether containing fuel obtained by conversion of a primary fuel based on alcohol comprising the steps and means for: (a) continuously withdrawing the primary fuel based on alcohol from a fuel tank and pressurising the primary fuel based on alcohol in its liquid form to a final engine injection pressure; (b) continuously introducing the pressurized primary fuel based on alcohol into a fuel accumulation chamber; (c) continuously distributing the pressurized primary fuel based on alcohol into pipes connecting the accumulation chamber with fuel injectors of the engine; (d) prior to the fuel injectors continuously converting the pressurised primary fuel based on alcohol to an ether containing fuel by contact with an alcohol dehydration catalyst being arranged in each of the pipes upstream the fuel injectors; (e) continuously injecting the ether containing fuel at injection pressure into the engine; and (f) continuously withdrawing a part of the introduced primary fuel based on alcohol from the accumulation chamber; and (g) depressurising and recycling the withdrawn primary fuel based on alcohol to the fuel tank.

A valve timing adjusting device for and engine includes a sprocket configured to rotate by receiving drive power from a driving shaft, a vane rotor fixed to a driven shaft so as to be rotatable relative to the sprocket, a housing that includes an oil chamber housing the vane rotor and is fixed to one end in a thickness direction of the sprocket, a bolt fixing the sprocket to the housing, and a knock pin inserted into a sprocket hole formed in the sprocket at one end thereof and into a housing hole formed in the housing at the other end thereof to restrict relative relation between the sprocket and the housing. The knock pin abuts against an inner wall of the sprocket hole at one end thereof, and abuts against an inner wall of the housing hole at the other end thereof.

A nonvolatile memory device is provided as follows. A memory cell array includes a plurality of memory cells. An address decoder provides a first verify voltage to selected memory cells among the plurality of memory cells in a first program loop and provides a second verify voltage to the selected memory cells in a second program loop. A control logic determines the second program loop as a verify voltage offset point in which the first verify voltage is changed to the second verify voltage based on a result of a verify operation of the first program loop.

A programmable memory including a self-latching read data path. A sense amplifier senses the voltage level at a bit line, the bit line communicating the data state of a selected memory cell in its associated column. A data latch coupled to the output of the sense amplifier passes the sensed data state. Set-reset logic is provided that receives the output of the data latch in the read data path and, in response to a transition of the data state in a read cycle, latches the data latch and isolates it from the sense amplifier. The set-reset logic resets the data latch at the start of the next read cycle. In some embodiments, a timer is provided so that the latch is reset after a time-out period in a long read cycle in which no data transition occurs.

Various systems and methods for implementing fuse-based integrity protection are described herein. A system for validating a read-only memory (ROM), the system comprising a ROM reader logic, implemented at least partly in hardware, to: access a read-only memory (ROM) having a plurality of permanently programmable electric couplings (PPECs), the PPECs having been programmed; survey a number of permanently altered PPECs in the set of PPECs to produce a counter value; read a binary representation of the counter value from PPEC values stored as a PPEC signature; and read a binary representation of the binary complement of the counter value from PPEC values in the PPEC signature; and a ROM validation logic, implemented at least partly, in hardware, to verify the integrity of the ROM using a combination of at least two of: the counter value, the binary representation of the counter value, and the binary representation of the binary complement of the counter value.

A read sensing method for an OTP non-volatile memory is provided. The memory array is connected with plural bit lines. Firstly, a selected memory cell of the memory array is determined, wherein one of the plural bit lines connected with the selected memory cell is a selected bit line and the other bit lines are unselected bit lines. Then, the unselected bit lines are precharged to a precharge voltage. Then, the selected bit line is connected with the data line, and the data line is discharged to a reset voltage. After a cell current from the selected memory cell is received, a voltage level of the data line is gradually changed from the reset voltage. According to at least one result of comparing a voltage level of the data line with a comparing voltage, an output signal is generated.

The semiconductor device includes a bit line, a transistor, a retention node, and a capacitor. The transistor has a function of charging or discharging the retention node. The capacitor has a function of retaining a potential of the retention node. A voltage greater than the sum of a writing voltage and a threshold voltage is applied to a gate of the transistor. When the transistor is turned on, a first potential is supplied to the bit line with a reference potential in a floating state. A voltage less than the sum of the writing voltage and the threshold voltage is applied to the gate of the transistor. When the transistor is turned on, a second potential is supplied to the bit line with a reference potential in a floating state. With use of the first and second potentials, the threshold voltage of the transistor is calculated without being influenced by parasitic capacitance and variations in the storage capacitance of the capacitor.

An SRAM includes an SRAM array comprising a plurality of SRAM cells arranged in a matrix. Each of the SRAM cells includes six vertical field effect transistors. The SRAM array includes a plurality of groups of conductive regions extending in the column direction. Each of the plurality of groups of conductive regions includes a first to a fourth conductive region arranged in this order in the row direction, and the first to fourth conductive regions are separated by insulating regions from each other. The first, second and third conductive regions are coupled to sources of first conductive type VFETs, and the fourth conductive region is coupled to sources of second conductive type VFETs. The plurality of groups are arranged in the row direction such that the fourth conductive region of one group of conductive regions is adjacent to the first conductive region of adjacent one group of conductive regions.

A compact CMOS anti-fuse memory cell. In one aspect, an apparatus includes an N− well and an anti-fuse cell formed on the N− well. The anti-fuse cell includes a lightly doped drain (LDD) region deposited in the N− well, an oxide layer deposited on the N− well and having an overlapping region that overlaps the LDD region, and a control gate deposited on the oxide layer, wherein a bit of the anti-fuse cell is programmed when a voltage difference between the control gate and the LDD region exceeds a voltage threshold of the oxide layer and forms a leakage path from the control gate to the LDD region, and wherein the leakage path is confined to occur in the overlapping region.

The invention relates to an integrated circuit (1), comprising: a field-effect transistor (2), comprising:first and second conduction electrodes (201, 202);a channel zone (203) arranged between the first and second conduction electrodes;a gate stack (220) arranged vertically in line with the channel zone, and comprising a gate electrode (222);an RRAM-type memory point (31) formed under the channel zone, or formed in the gate stack under the gate electrode.

Examples of the present disclosure provide apparatuses and methods for performing shift operations in a memory. An example method comprises performing a shift operation a first element stored in a first group of memory cells coupled to a first access line and a number of sense lines of a memory array and a second element stored in a second group of memory cells coupled to a second access line and the number of sense lines of the memory array. The method can include shifting the first element by a number of bit positions defined by the second element by performing a number of AND operations, OR operations, SHIFT operations, and INVERT operations performed without transferring data via an input/output (I/O) line.

A signal shifting circuit may include a bank selection signal generation unit suitable for generating a bank selection signal synchronized with a first clock in response to a bank address and an internal write signal; and a shifting device suitable for generating a shifted bank selection signal by shifting the bank selection signal by a number of times according to latency information and for advancing a phase of the shifted bank selection signal whenever shifting the bank selection signal once or more so that the shifted bank selection signal is synchronized with a second clock having a phase leading a phase of the first clock.

A memory device performs DLL (delay locked loop) calibration in accordance with a DLL calibration mode configured for the memory device. A host controller can configure the calibration mode based on operating conditions for the memory device. The memory device includes an input/output (I/O) interface circuit and a delay locked loop (DLL) circuit coupled to control I/O timing of the I/O interface. A control circuit of the memory device selectively enables and disables DLL calibration in accordance with the DLL calibration mode. When selectively enabled, the DLL calibration is to operate at a time interval identified by the DLL calibration mode, and when selectively disabled, the DLL calibration is to cease or refrain from DLL calibration operations.

A circuit and method for adaptive trimming of the reference signal for sensing data during a read operation of magnetic memory cells to improve read margin for the magnetic memory cells. The circuit has a trim one-time programmable memory array programmed with offset trim data applied to magnetic memory array sense amplifiers. Sense amplifier trimming circuits receive and decode the trim data to determine offset trim signal magnitude to adjust the reference signal to improve the read margin. The method sets the offset trim level to each increment of the offset trim level. Data is written and read to the magnetic memory array, the number of errors in the array is accumulated for each setting of the offset trim level. The error levels are compared and the appropriate trim level is programmed to the trim memory cells such that a read margin of the sense amplifier is improved.

A semiconductor device capable of stably holding data for a long time is provided. A transistor including a back gate is used as a writing transistor of a memory element. In the case where the transistor is an n-channel transistor, a negative potential is supplied to a back gate in holding memory. The supply of the negative potential is stopped while the negative potential is held in the back gate. In the case where an increase in the potential of the back gate is detected, the negative potential is supplied to the back gate.

Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

An apparatus includes a first terminal configured to communicate data with an outside of the apparatus, a second terminal configured to receive a first power source potential, a third terminal configured to receive a second power source potential lower than the first power source potential, a fourth terminal configured to be coupled to a calibration resistor, an output buffer including first to third nodes coupled to the first to third terminals respectively, and a replica circuit including fourth and fifth nodes coupled to the second and third terminals respectively, and sixth node coupled to the fourth terminal.

A semiconductor memory device may include: a memory bank comprising a plurality of word lines; a smart command generation unit suitable for generating a smart refresh command, which is enabled at a random cycle, in response to an active command; and a refresh operation control unit suitable for performing a refresh operation to at least one of adjacent word lines of a target word line among the plurality of word lines in response to the smart refresh command.

A refresh controller of a memory device may include a timing controller, a refresh counter and an address generator. The timing controller generates a counter refresh signal in response to receiving a refresh command provided from an external device, and generates a hammer refresh signal that is activated periodically. The refresh counter generates a counter refresh address signal in response to the counter refresh signal, such that the counter refresh address signal represents a row address, the refresh counter being configured sequentially change the counter refresh address signal. The address generator generates a hammer refresh address signal in response to the hammer refresh signal, the hammer refresh address signal representing an address of a row of the memory device that is physically adjacent to a row of the memory device corresponding to a hammer address that is accessed intensively.

A device including a memory cell and write assist circuit is disclosed. The memory cell includes a first inverter and a second inverter cross-coupled with the first inverter. The write assist circuit is coupled to the memory cell. During a write operation of the memory cell, the write assist circuit is configured to adjust a voltage level of an operational voltage provided to the first inverter or the second inverter by a bias voltage difference.

A bit line architecture for dual-port static random-access memory (DP SRAM) is provided. An array of memory cells is arranged in rows and columns, and comprises a first subarray and a second subarray. A first pair of complementary bit lines (CBLs) extends along a column, from a first side of the array, and terminates between the first and second subarrays. A second pair of CBLs extends from the first side of the array, along the column, to a second side of the array. The CBLs of the second pair of CBLs have stepped profiles between the first and second subarrays. A third pair of CBLs and a fourth pair of CBLs extend along the column. The first and third pairs of CBLs electrically couple to memory cells in the first subarray, and the second and fourth pairs of CBLs electrically couple to memory cells in the second subarray.

An electronic device includes a semiconductor memory that includes: a memory cell coupled between a first line and a second line; a first selection block configured to select the first line; a second selection block configured to select the second line; an alternate current supply block configured to supply, during a read operation, an alternate current corresponding to a resistance state of the memory cell; and a sensing block configured to sense, during the read operation, at least one of a cell current flowing through the memory cell and the alternate current.

A method is provided for a reading memory even if there is a threshold voltage in an overlapped threshold voltage (VTH) region between a first state distribution and a second state distribution. The method includes ramping a bias on a memory cell a first time to determine a first threshold voltage (VTH1) of the memory cell and determining whether the VTH1 is within the overlapped VTH region. Upon determination that the memory cell is within the overlapped VTH region, the method further includes applying a write pulse to the memory cell; ramping a bias on the memory cell a second time to determine a second threshold voltage (VTH2); and determining the state of the memory cell prior to receiving the write pulse based on a comparison between the VTH1 and the VTH2.

A method of operating a nonvolatile memory device includes: first programming a target transistor of a cell string of the nonvolatile memory device, wherein the target transistor has a first threshold voltage distribution after the first programming, and wherein the cell string includes a plurality of transistors; and second programming the target transistor of the cell string, wherein the first transistor has a second threshold voltage distribution after the second programming, wherein a width of the second threshold voltage distribution is less than a width of the first threshold voltage distribution.

According to one embodiment, a first well of the first conductivity type which is formed in a substrate. a second well of a second conductivity type which is formed in the first well. The plurality of memory cells, the plurality of first bit line select transistors, and the plurality of second bit line select transistors are formed in the second well, and the plurality of first bit line select transistors and the plurality of second bit line select transistors are arranged on a side of the sense amplifier with respect to the plurality of memory cells of the plurality of bit lines.

A strobe signal shaping method for a data storage system includes receiving a strobe signal; boosting a first clock edge portion of the strobe signal when the strobe signal is received after having been idle or paused over a predetermined time period; and returning to an operating mode in which boosting is turned off with respect to a second clock edge portion of the strobe signal.

A memory system may include a memory device including 0th to N-1th memory blocks, wherein N is a positive integer; and a controller having a first list and a second list, wherein the first list includes 0th to N-1th erase count values respectively for the 0th to N-1th memory blocks, wherein the second list includes 0th to N-1th difference values respectively for the 0th to N-1th memory blocks, wherein each of the 0th to N-1th difference values is a difference between an average value of the 0th to N-1th erase count values and each of the 0th to N-1th erase count values, wherein the controller selects a source block and a target block among the 0th to N-1th memory blocks depending on the 0th to N-th erase count values included in the first list and the 0th to N-1th difference values included in the second list to perform a wear leveling between the source block and the target block.

A array of electrically programmable fuse (eFuse) units includes at least one connecting switch connecting two adjacent eFuse units. Each eFuse unit includes an eFuse, a write switch for passing through a first portion of a write current, a read/write switch for passing through a second portion of the write current or a read current, and a common node. The eFuse, the write switch, the read/write switch, and the at least one connecting switch are connected to each other at the common node. By turning on and off the at least one connecting switch, the current is split among the eFuse units, so that the size of the write switch can be reduced, thus reducing the total area of the array.

Semiconductor memory devices are provided. The semiconductor memory device includes an input/output (I/O) drive controller, a data I/O unit and a data transmitter. The input/output (I/O) drive controller generates drive control signals and an input control signal for driving first and second global I/O lines in a first test mode or a second test mode. The data I/O unit drives the first global I/O line in response to an input data when a write operation is executed in the first test mode and to drive the first and second global I/O lines in response to the drive control signals when the write operation is executed in the second test mode. The data transmitter transfers the data on the first global I/O line onto first and second local I/O lines to store the data on the first global I/O line in a memory cell array portion when the write operation is executed in the first test mode. The data transmitter also transfers the data on the first and second global I/O lines onto the first and second local I/O lines to store the data on the first and second global I/O lines in the memory cell array portion when the write operation is executed in the second test mode. Related methods are also provided.

A method for fabricating a semiconductor device and a method for operating the semiconductor device are provided. The method for fabricating a semiconductor device includes forming a first electrode layer; forming a material layer, including conductive path components, over the first electrode layer; forming a second electrode layer over the material layer; performing a forming operation, which includes initially creating, in the material layer, a conductive path that electrically connects the first electrode layer to the second electrode layer by applying one of a predetermined voltage and a predetermined current between the first and second electrode layers, the conductive path including the conductive path components; and performing a first heat-treatment process at a predetermined temperature that removes some of the conductive path components from the conductive path, wherein a resistance state of the material layer changes based on the creation or dissolution of the conductive paths.

An apparatus for assigning a plurality of access nodes of a wireless communication network to control areas includes a processing apparatus. The processing apparatus is configured to assign each access node in the plurality of access nodes to a control area of a plurality of control areas and to determine a first control phase. The first control phase is a period of time during which the assignment of access nodes to control areas remains constant. The processing apparatus is configured to, when changing from the first control phase to a following second control phase, reassign at least a subset of access nodes which were assigned during the first control phase to a first control area to a second control area and reassign at least a subset of access nodes which were assigned during the first control phase to a third control area to the first control area.

A method for transmitting uplink (UL) data requiring low latency in a wireless communication system according to the present invention, the method performed by a user equipment comprises transmitting contention PUSCH resource block (CPRB) indication information used for identifying a particular UE and/or particular data to an eNB; transmitting UL data to the eNB through CPRB resources of a contention based PUSCH (CP) zone; and receiving a hybrid automatic retransmit request (HARQ) response with respect to the UL data from the eNB through a physical hybrid ARQ indicator channel (PHICH).

A mechanism that allows the successful decoding of MCS information of cell edge UEs while retaining the performance for the other UEs of the cell is provided. In one aspect, a UE may determine an uplink control coding rate based on an uplink signal quality. The UE may encode uplink control data based on the uplink control coding rate. The UE may apply a pattern of unused resource element locations in uplink control resource elements based on the uplink control coding rate. The UE may transmit the uplink control resource elements with the pattern of unused resource element locations. In another aspect, an eNB may receive uplink control resource elements. The eNB may determine an uplink control coding rate based on a pattern of resource element locations in the uplink control resource elements. The eNB may decode uplink control data based on the uplink control coding rate.

Methods and apparatus for multiple user uplink are provided. In one aspect, method for wireless communication includes receiving an assignment of a frequency bandwidth for an uplink transmission of a station. The method further includes determining whether a portion of the assigned frequency bandwidth is unavailable for the uplink transmission. The method further includes selectively transmitting the uplink transmission based on whether the portion of the assigned frequency bandwidth is unavailable.

A first communication device and method therein for transmitting data information at fixed time instants on a radio channel to a second communication device in a radio communications network. First, the first communication device determines that the radio channel is available for transmitting data information to the second communication device during a time period determined by the first communication device. Then, the first communication device transmits a preamble on the available radio channel after the time period. The first communication device thereafter transmits the data information on the available radio channel to the second communication device at a next fixed time instant following the transmission of the preamble.

A time-reversal wireless system comprising a first wireless transceiver of a time-reversal client, one or more second wireless transceiver and/or a time-reversal client with the first wireless transceiver. The first wireless transceiver of the time-reversal client is wirelessly coupled to the one or more second wireless transceiver through a wireless broadband multipath channel associated with a space. The time-reversal client contains the first wireless transceiver. The time-reversal client also contains a processor and a memory configured to obtain a set of channel state information (CSI) in a channel probing phase, and/or to obtain a set of location-specific signatures based on the set of CSI and/or a time reversal operation in a channel probing phase. The set of CSI is captured when one or more probing signal is sent either from the first wireless transceiver to each of the at least one second wireless transceiver, or from each of the at least one second wireless transceiver to the first wireless transceiver, through the wireless broadband multipath channel associated with the space. A channel passband with bandwidth W0 is associated with the wireless broadband multipath channel. A first passband with bandwidth W1 is associated with the first wireless transceiver. The W1 is not larger than W0 such that the first passband is part of the channel passband. One or more second passband is associated with the one or more second wireless transceiver such that a bandwidth W2 associated with each of the one or more second passband is not larger than W1 such that the each of the one or more second passband is part of the first passband. Each of the set of CSI include a channel impulse response, a channel frequency response, and/or another channel state data of the wireless broadband multipath channel.

A data transmission apparatus in a communication system includes a reception unit configured to receive terminal information from a plurality of terminals through a new frequency band for transmission and reception of data between the plurality of terminals and an AP (access point); a determination unit configured to determine access timing of the terminals to the AP by using the terminal information, and generate terminal access information including information on the access timing; and a transmission unit configured to transmit the terminal access information and beacon frames to the terminals, wherein the terminals access the AP and transmit data frames to the AP, at the access timing based on the beacon frames.

Disclosed are a method for transmitting and receiving a frame in a wireless local area network (WLAN) system and an apparatus for the same. A method for generating interference/non-interference station lists includes receiving a first frame from a second station, acquiring a receiver address of the first frame from the first frame, and setting, based on whether to receive a second frame that is a response to the first frame from a third station indicated by the receiver address within a preset time from a time when the first frame has been received, the third station as an interference station or a non-interference station. Therefore, the performance of a communication system may be improved.

This disclosure describes methods, devices, and systems related to an OFDMA Distributed Channel Access. Devices are disclosed comprising: at least one processor; and at least one memory that stores computer-executable instructions, wherein the at least one processor is configured to access the at least one memory and execute the computer-executable instructions to identify a trigger frame received on the communication channel from the computing device. The at least one processor may determine an uplink frame to be sent to a computing device on a communication channel. The at least one processor may identify one or more random access resource allocations, wherein the one or more random access resource allocations are associated with the trigger frame. The at least one processor may assign a respective numerical value to each of the one or more random access resource allocations. The at least one processor may also select a numerical value based at least in part on a probability distribution. The at least one processor may also determine a particular resource allocation of the one or more random access resource allocations that corresponds to the numerical value. The at least one processor may also cause the uplink frame to be sent to the computing device using the particular resource allocation.

A system, apparatus and method is disclosed for multiband wireless communication. Frequency bands and/or transmission formats are identified as available within a range for wireless communication. The system evaluates signal quality metrics for each frequency band and selects a communication method based on the evaluation. Multiple frequency bands and communication methods can be utilized by the system such that a combination of licensed, unlicensed, semilicensed, and overlapped frequency bands can be simultaneously used for communication. The system monitors communications and can report link performance for adaptive control of the selected communication methods.

Disclosed are a method and an apparatus for generating a codeword, and a method and an apparatus for recovering a codeword. An encoder calculates the number of punctured symbol nodes among symbol nodes included in a codeword, punctures symbol nodes located at even or odd number positions among the symbol nodes included in the codeword, calculates the number of symbol nodes which need to be additionally punctured on the basis of the calculated number of the symbol nodes to be punctured, classifies the symbol nodes, which need to be additionally punctured, into one or more punctured node groups on the basis of the calculated number of symbol nodes which need to be punctured, determines the locations on the codeword where the one or more punctured node groups are to be arranged, and punctures the symbol nodes included in the codeword which belong to the punctured node groups according to the determined locations. A transmission unit transmits the codeword.

Methods, apparatuses, computer readable media for spatial reuse for uplink multi-user transmissions. An apparatus of a station comprising processing circuitry is disclosed. The processing circuitry may be configured to decode a first portion of a physical layer convergence procedure (PLCP) protocol data unit (PPDU), and configure the station to transmit a frame, if the PPDU is an overlapping basic service set (OBSS) PPDU, and a receive power of the PPDU is below an overlapping power detect level. An apparatus of an access point comprising processing circuitry is disclosed. The processing circuitry may be configured to encode a PPDU comprising a basic service set identifier of the access point, and encode the PPDU to indicate spatial reuse (SR) delay, SR restricted, or SR not permitted. The processing circuitry may be further configured to configure the access point to transmit the PPDU.