AnnaLee Saxenian, author of the classic book "Regional Advantage," still thinks the area's future is bright.

Alex Lazarow, venture capitalist at Cathay Innovation, says that start-ups in cities around the U.S. and the world are creating their own rules for success. While Silicon Valley companies have sparked key innovations and generated huge wealth over the past few decades, not everyone should use them as a model going forward. In fact, we can learn more from frontier entrepreneurs, who are thinking more creatively about raising capital, sourcing talent, and pursuing social impact. Lazarow is the author of the book "Out-Innovate: How Global Entrepreneurs--from Delhi to Detroit--Are Rewriting the Rules of Silicon Valley."

A special thanks to Core77 reader Ross Oliver, who read our post on Cheat Sheets and commented that silicone--which I always thought was inert--may in fact leach harmful chemicals into food.

Oliver provided a link to Life Without Plastic, a company founded in 2006 by two parents seeking alternatives to plastic for their then-newborn child. Today the company sells over 450 products made from nontoxic alternatives to plastic, like good ol' glass and stainless steel. Because they do sell some items that feature silicone gaskets and seals, their website has a section on silicone, where they provide links to several peer-reviewed studies done on how the material reacts with food. Here's some relevant information:

Silicones are not completely inert or chemically unreactive and can release toxic chemicals. They can leach certain synthetic chemicals at low levels, and the leaching is increased with fatty substances, such as oils.

One study tested the release of siloxanes from silicone nipples and bakeware into milk, baby formula and a simulant solution of alcohol and water. Nothing was released into the milk or formula after six hours, but after 72 hours in the alcohol solution several siloxanes were detected.

Another study found siloxanes [a byproduct of the polymerization process used to create a silicone product] being released from silicone bakeware, with leaching increasing as the food fat content increased.

A review of the literature indicated that the key critical effects of common siloxanes, as shown in animal studies, are impaired fertility and potential carcinogenicity (2005 Report by the Danish Ministry of the Environment: Siloxanes - Consumption, Toxicity and Alternatives).

The European Union considers certain siloxanes to be endocrine disruptors (Study on enhancing the Endocrine Disruptor priority list with a focus on low production volume chemicals, ENV.D.4/ETU/2005/00w28r).

If you use silicone in your kitchen, I'd say the entire page is well worth a read.

A process for obtaining silicon-bridged metallocene compounds comprising the following steps: a) reacting, at a temperature of between −10° C. and 70° C., the starting ligand with about 2 molar equivalents of an alkylating agent;b) after the reaction has been completed, adding at least 2 molar equivalents of an alkylating agent that can be also different from the first one; andc) reacting, at a temperature of between −10° C. and 70° C., the product obtained from step b) with at least 1 molar equivalent of a compound of formula ML's, wherein M is a transition metal; s is an integer corresponding to the oxidation state of the metal; and L' is an halogen atom selected from chlorine, bromine and iodine.

Disclosed herein are surface treatments for soft silicone gel materials such as silicone intraocular lenses.

Aqueous copolymer dispersions for a variety of uses, including coating compositions or binders for plasters and paints, are disclosed. The aqueous copolymer dispersions may comprise one or more silicon containing compounds, in particular hydrolyzable silane compounds without any additional reactive group.

Amphiphilic biomimetic phosphorylcholine-containing silicone compounds for use in both topical and internal applications as components in biomedical devices. The silicone compounds, which include zwitterionic phosphorylcholine groups, may be polymerizable or non-polymerizable. Specific examples of applications include use as active functional components in ophthalmic lenses, ophthalmic lens care solutions, liquid bandages, wound dressings, and lubricious and anti-thrombogenic coatings.

There is disclosed a silicone rubber composition curable by a radial ray comprising, at least, (A) an organopolysiloxane shown by the following general formula (1), (B) a phenyl ester derivative having an acryl group, (C) a sensitizer sensitized by a radial ray, and (D) a photosensitive dye, wherein each R1, R2, and R3 independently represents a monovalent hydrocarbon group having 1 to 10 carbon atoms; X represents the same or different monovalent organic group having an acryl group or a methacryl group. As a result, there is provided a silicone rubber composition capable of being cured by irradiation of a radial ray whereby showing excellent adhesion with various substrates, capable of forming a cured film, and capable of easily distinguishing whether it is cured or not by observing appearance when not irradiated with a radial ray.

The present invention relates to a process comprising the steps of reacting a reactive mixture comprising at least one silicone-containing component, at least one hydrophilic component, and at least one diluent to form an ophthalmic device having an advancing contact angle of less than about 80°; and contacting the ophthalmic device with an aqueous extraction solution at an elevated extraction temperature, wherein said at least one diluent has a boiling point at least about 10° higher than said extraction temperature.

A UV curable silicone rubber composition is provided. The composition does not undergo curing failure, foaming, and other undesirable conditions even if a water-containing inorganic filler such as zeolite were added. A UV curable silicone rubber composition comprising (A) 100 parts by weight of an organopolysiloxane having at least 2 alkenyl groups per molecule represented by the average compositional formula (I): R1aSiO(4-a)/2 (I) (wherein R1 is independently a substituted or unsubstituted monovalent hydrocarbon group, and a is a positive number of 1.95 to 2.05); (B) 1 to 300 parts by weight of an inorganic filler having a water content of at least 0.5% by weight; (C) 0.1 to 50 parts by weight of an organohydrogenpolysiloxane having at least 2 silicon-bonded hydrogen atoms per molecule; and (D) a catalytic amount of a photoactive platinum complex curing catalyst.

Process for preparing a dispersion comprising silicon dioxide particles and cationizing agents, by dispersing 50 to 75 parts by weight of water, 25 to 50 parts by weight of silicon dioxide particles having a BET surface area of 30 to 500 m2/g and 100 to 300 μg of cationizing agent per square meter of the BET surface area of the silicon dioxide particles, wherein the cationizing agent is obtainable by reacting at least one haloalkyl-functional alkoxysilane, hydrolysis products, condensation products and/or mixtures thereof with at least one aminoalcohol and water; and optionally removing the resulting hydrolysis alcohol from the reaction mixture. Also the process for preparing the dispersion, wherein the cationizing agent comprises one or more quaternary, aminoalcohol-functional, organosilicon compounds of formula III and/or condensation products thereof, wherein Ru and Rv are independently C2-4 alkyl group, m is 2-5 and n is 2-5.

Provided is an oil-in-water silicone emulsion composition that has a low silicone oligomer content, and that can form, even without the use of an organotin compound as a curing catalyst, a cured film that exhibits satisfactory strength and satisfactory adherence to a substrate, through the removal of water fraction. An oil-in-water silicone emulsion composition comprising (A) 100 mass parts of a polyorganosiloxane that contains in each molecule at least two groups selected from the group consisting of a silicon-bonded hydroxyl group, alkoxy group, and alkoxyalkoxy group, (B) 0.1 to 200 mass parts of a colloidal silica, (C) 0.1 to 100 mass parts of an aminoxy group-containing organosilicon compound that has in each molecule an average of two silicon-bonded aminoxy groups, (D) 1 to 100 mass parts of an ionic emulsifying agent, (E) 0.1 to 50 mass parts of a non-ionic emulsifying agent, and (F) 10 to 500 mass parts of water.

A process for preparing a particle defoamer. The particle defoamer of 55%-75% of a carrier, 15%-35% of a silicone emulsion, 3%-10% of a texturing agent and 2%-10% of a solvent, based on the total weight of the particle defoamer; the process for preparing the particle defoamer is: (1)first adding a carrier A1 into a mixer, and then adding thereto a silicone emulsion B1, and stirring uniformly; (2)adding a carrier component A2 to the mixture obtained in (1), and stirring uniformly; (3)adding a silicone emulsion B2 to the mixture obtained in (2), and, after uniformly stirring, adding the solvent thereto and stirring uniformly; and (4)pelleting and drying by baking the mixture obtained in(3), so as to produce the product.

The present disclosure discloses a silicon-sulfur polymer, a solid electrolyte comprising the silicon-sulfur polymer, and a corresponding solid-state lithium-ion battery. The silicon-sulfur polymer of the present disclosure is a polymer compound comprising both an inorganic backbone-chain structure and an organic side-chain structure, and has the characteristics of both the organic polymer and the inorganic polymer as well as many unique properties. Therefore, the solid electrolyte formed by the silicon-sulfur polymer and the solid-state lithium-ion battery thereof have many good characteristics including a good lithium-ion-conduction capability, better thermal endurance, a wider range of operating temperatures, and better thermostability.

A dual end glycerol (meth)acrylate-modified silicone having formula (I): R1Me2SiO(R22SiO)aSiMe2R1 is novel. R1 is a mixture of 70-95 mol % of a group having formula (i) and 30-5 mol % of a group having formula (ii) wherein R3 is H or methyl, R2 is a monovalent hydrocarbon group which may be halogenated, Me stands for methyl, and a is an integer of 10-300.

Mixtures of silicon-containing coupling reagents comprising (mercaptoorganyl)alkylpolyethersilanes containing silanol groups and (mercaptoorganyl)alkylpolyethersilanes free of silanol groups in a weight ratio of from 5:95 to 95:5. The mixtures can be prepared by transesterification and hydrolysis. The mixtures can be used in rubber mixtures.

Compounds of the formula where R1 each individually is identical or different and is a hydrocarbon radical, R2 each individually is hydrogen or a methyl radical, n is an integer from 6 to 11, and m is 0 or 1, with the proviso that the sum of the number of carbon atoms in the three radicals R1 in the compound of the formula (I) is 6 to 24, can be admixed with curable polymer compositions to form products with hydrophilic surfaces, or can be applied to surfaces to render them hydrophilic.

Methods for formation of silicon carbide on substrate are provided. Atomic layer deposition methods of forming silicon carbide are described in which a first reactant gas of the formula SinHaXb wherein n=1-5, a+b=2n+2, a>0, and X=F, Cl, Br, I; and a second reactant gas of the formula MR3-bYb, wherein R is a hydrocarbon containing substituent, Y is a halide, hydride or other ligand and b=1-3 are sequentially deposited on a substrate and then exposed to a plasma. The process can be repeated multiple times to deposit a plurality of silicon carbide layers.

Disclosed herein are silicone wax emulsions and methods of manufacturing the same. One method of manufacturing silicone wax emulsions as disclosed herein comprises charging alpha-olefins of C-18 or greater chain length to a heating and mixing vessel along with undecylenic acid and blocking the carboxylic acid of the undecylenic acid with a compound containing a trimethylsilyl group by adding the compound in sufficient quantity and heating as a melt until blocking is complete. While maintaining a melt temperature, a silicone polymer containing methyl hydrogen siloxy units is added, followed by a hydrosilation reaction catalyst to effect a hydrosilation reaction. This results in an acid functional silicone polymer. The acid functional silicone polymer is combined with an emulsifier, and the molten combination is added to a stirred solution of alkaline agent and water that has been heated to a temperature above the silicone wax melting point. This process produces silicone wax emulsions with excellent qualities.

A micro device includes a substrate and a structure configured to bind to an object or a material, or not to bind to an object or material. The structure has a roughness based on a roughness of the object or material. For example, a microarray includes a substrate and a well positioned in the substrate and configured to bind to a type of bead. The well has a roughness based on a roughness of the type of bead to which the well is configured to bind. The roughness of the well is controlled by controlling a position and number of striations in the side of the well. In another example, a moveable component of a micro device may have a roughness different from a roughness of an adjacent component, to reduce the likelihood of the moveable component sticking to the adjacent component.

An approach for IR-based metrology for detecting stress and/or defects around TSVs of semiconductor devices is provided. Specifically, in a typical embodiment, a beam of IR light will be emitted from an IR light source through the material around the TSV. Once the beam of IR light has passed through the material around the TSV, the beam will be analyzed using one or more algorithms to determine information about TSV stress and/or defects such as imbedded cracking, etc. In one embodiment, the beam of IR light may be split into a first portion and a second portion. The first portion will be passed through the material around the TSV while the second portion is routed around the TSV. After the first portion has passed through the material around the TSV, the two portions may then be recombined, and the resulting beam may be analyzed as indicated above.

Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible.

A graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surround by an induction coil, wherein a plurality of first slits are vertically formed through the outer wall and an inner wall of the crucible, and a plurality of second slits are vertically formed from an edge of the disc-shaped bottom of the crucible toward a center of the bottom.

A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line. The slit patterns arranged at the respective slit regions in the vertical direction are spaced from each other with a distance of 8*d. Alternatively, the first to fourth slit regions may be arranged in reverse order, or in the vertical direction.

A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface of the amorphous silicon layer, crystallizing the amorphous silicon layer having the catalytic metal thereon into a polycrystalline silicon layer, annealing the polycrystalline silicon layer in an N2 gas atmosphere to stabilize the polycrystalline silicon layer, etching a surface of the polycrystalline silicon layer using an etchant, and patterning the polycrystalline silicon layer to form an island-shaped active layer.

Novel methods and systems for miniaturized lasers are described. A photonic crystal is bonded to a silicon-on-insulator wafer. The photonic crystal includes air-holes and can include a waveguide which couples the laser output to a silicon waveguide.

A through silicon via with sidewall roughness and methods of manufacturing the same are disclosed. The method includes forming a via in a substrate and roughening a sidewall of the via by depositing material within the via. The method further includes removing a backside of the substrate to form a through via with a roughened sidewall structure.

A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.

Disclosed are methods of lithography using a tip array having a plurality of pens attached to a backing layer, where the tips can comprise a metal, metalloid, and/or semi-conducting material, and the backing layer can comprise an elastomeric polymer. The tip array can be used to perform a lithography process in which the tips are coated with an ink (e.g., a patterning composition) that is deposited onto a substrate upon contact of the tip with the substrate surface. The tips can be easily leveled onto a substrate and the leveling can be monitored optically by a change in light reflection of the backing layer and/or near the vicinity of the tips upon contact of the tip to the substrate surface.

The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

A three dimensional (3D) branchline coupler using through silicon vias (TSV), methods of manufacturing the same and design structures are disclosed. The method includes forming a first waveguide structure in a first dielectric material. The method further includes forming a second waveguide structure in a second dielectric material. The method further includes forming through silicon vias through a substrate formed between the first dielectric material and the second dielectric material, which connects the first waveguide structure to the second waveguide structure.

Improved silicon solar cells, silicon image sensors and like photosensitive devices are made to include strained silicon at or sufficiently near the junctions or other active regions of the devices to provide increased sensitivity to longer wavelength light. Strained silicon has a lower band gap than conventional silicon. One method of making a solar cell that contains tensile strained silicon etches a set of parallel trenches into a silicon wafer and induces tensile strain in the silicon fins between the trenches. The method may induce tensile strain in the silicon fins by filling the trenches with compressively strained silicon nitride or silicon oxide. A deposited layer of compressively strained silicon nitride adheres to the walls of the trenches and generates biaxial tensile strain in the plane of adjacent silicon fins.

Provided are a polycrystalline silicon ingot casting mold and a method for producing a polycrystalline silicon ingot casting mold, with which high-quality silicon ingots can be obtained at high yields by minimizing sticking with the surfaces of the silicon ingot casting mold, and losses and damages that occur when solidified silicon ingot is released from the mold. The method for producing a polycrystalline silicon ingot casting mold having a release layer, including: forming a slurry by mixing a silicon nitride powder with water, coating the surface of the mold with the slurry, and heating the mold at 400 to 800° C. in an atmosphere containing oxygen, after coating the slurry.

A polycrystalline silicon ingot casting mold, and method for producing same. Mold release material being obtained by blending a silicon nitride powder (A) having an average particle diameter along the short axis of 0.6 to 13 μm with a silicon nitride powder (B) having an average particle diameter along the short axis of 0.1 to 0.3 μm at a weight ratio of 5:5 to 9:1; coating the mold surface with the slurry; and a heating the mold at 800 to 1200° C. in an atmosphere containing oxygen.

The present invention relates to a silicone rubber like material and a printing device including a stamp layer (100;201) comprising such a material. The material is suitable for use in soft lithography as it enables stable features having dimensions in the nanometer range to be obtained on a substrate, and also allows for the accommodation onto rough and non-flat substrate surfaces. The invention also relates to methods for manufacturing the silicone rubber like material and stamp layer (100;201) and use thereof in lithographic processes.

A natural gas-containing stream such as biogas from landfills and sewage treatment plants is freed of siloxane contaminants by passing the biogas through a bed containing an adsorbent having a neutral surface, which adsorbs the siloxanes. When the bed of neutral adsorbent is filled to capacity, the adsorbent bed is heated to remove the siloxanes and regenerate the bed. The neutral adsorbent reduces disadvantageous reactions between the adsorbent and siloxane and other impurities in the natural gas-containing stream.

Tyre and rubber composition for tyre, based on at least one isoprene elastomer (for example natural rubber), an inorganic filler as reinforcing filler (for example silica) and a coupling system which provides the bonding between the said reinforcing inorganic filler and the isoprene elastomer, the said coupling system comprising, in combination: as first coupling agent, a silane sulphide compound;as second coupling agent, an at least bifunctional organosilicon compound (for example an organosilane or an organosiloxane) which can be grafted to the elastomer by means of an azodicarbonyl functional group (—CO—N═N—CO—).

A silicon-based thermal energy transfer apparatus that aids dissipation of thermal energy from a heat-generating device, such as an edge-emitting laser diode, is provided. In one aspect, the apparatus comprises a silicon-based base portion having a first primary surface and a silicon-based support structure. The silicon-based support structure includes a mounting end and a distal end opposite the mounting end with the mounting end received by the base portion such that the support structure extends from the first primary surface of the base portion. The support structure includes a recess defined therein to receive the edge-emitting laser diode. The support structure further includes a slit connecting the distal end and the recess to expose at least a portion of a light-emitting edge of the edge-emitting laser diode when the edge-emitting laser diode is received in the support structure.

The invention provides a method for producing grain-oriented silicon steel with single cold rolling, comprising: 1) smelting, refining and continuous casting to obtain a casting blank; 2) hot rolling; 3) normalization, i.e. normalizing annealing and cooling; 4) cold-rolling, i.e. single cold rolling at a cold rolling reduction rate of 75-92%; 5) decarburizing annealing at 780-880° C. for 80-350 s in a protective atmosphere having a due point of 40-80° C., wherein the total oxygen [O] in the surface of the decarburized sheet: 171/t≦[O]≦313/t (t represents the actual thickness of the steel sheet in mm), the amount of absorbed nitrogen: 2-10 ppm; 6) high temperature annealing, wherein the dew point of the protective atmosphere: 0-50° C., the temperature holding time at the first stage: 6-30 h, the amount of absorbed nitrogen during high-temperature annealing: 10-40 ppm; 7) hot-leveling annealing. The invention may control the primary recrystallization microstructure of steel sheet effectively by controlling the normalization process of hot rolled sheet to form sufficient favorable (Al, Si)N inclusions from nitrogen absorbed by slab during decarburizing annealing and low-temperature holding of high-temperature annealing, facilitating the generation of stable, perfect secondary recrystallization microstructure of the final products. In addition, the invention avoids the impact of nitridation using ammonia on the underlying layer in prior art, and thus the formation of a good glass film underlying layer is favored.

An aqueous dispersion for use as a finishing agent for textiles, wherein the dispersion contains a pyrogenically produced, aggregated silicon dioxide powder and a cationic polymer which is soluble in the dispersion, wherein the cationic polymer is present in a quantity such that the particles of the silicon dioxide powder exhibit a positive zeta potential.

A system includes a SiC semiconductor power device; a power supply board that is configured to provide power to a first gate driver board via a connector; the first gate driver board that is coupled and configured to provide current to the SiC semiconductor power device, wherein the first gate driver board is coupled to the power supply board via the connector, and wherein the first gate driver board is separated from the power supply board; and an interconnect board that is coupled to the first gate driver board, wherein the interconnect board is configured to couple the first gate driver board a second gate driver board.

Disclosed is a silicon-based anode active material for a lithium secondary battery. The silicon-based anode active material imparts high capacity and high power to the lithium secondary battery, can be used for a long time, and has good thermal stability. Also disclosed is a method for preparing the silicon-based anode active material. The method includes (A) binding metal oxide particles to the entire surface of silicon particles or portions thereof to form a silicon-metal oxide composite, (B) coating the surface of the silicon-metal oxide composite with a polymeric material to form a silicon-metal oxide-polymeric material composite, and (C) heat treating the silicon-metal oxide-polymeric material composite under an inert gas atmosphere to convert the coated polymeric material layer into a carbon coating layer.

Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.

A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.

Provided are superconducting circuits and, more specifically, methods of forming such circuits. A method may involve forming a silicon-containing low loss dielectric (LLD) layer over a metal electrode such that metal carbides at the interface of the LLD layer and electrode. The LLD layer may be formed using chemical vapor deposition (CVD) at a temperature of less than about 500° C. At such a low temperature, metal silicides may not form even though silicon containing precursors may come in contact with metal of the electrode. Silicon containing precursors having silane molecules in which two silicon atoms bonded to each other (e.g., di-silane and tri-silane) may be used at these low temperatures. The LLD layer may include amorphous silicon, silicon oxide, or silicon nitride, and this layer may directly interface one or more metal electrodes. The thickness of LLD layer may be between about 1,000 Angstroms and 10,000 Angstroms.

An abrasive article includes a body having abrasive particles contained within a bond material. The abrasive particles can include a majority content of silicon nitride and a minority content of sintering material including at least two rare-earth oxide materials. In an embodiment, the rare-earth oxide materials can include Nd2O3 and Y2O3. In a particular embodiment, the abrasive particles comprise a content (wt %) of Nd2O3 that is greater than a content of Y2O3 (wt %).

Methods for preparing a silicon bonded PCD material involving a one step, double sweep process and drilling cutters made by such processes are disclosed. The PCD material includes thermally stable phases in the interstitial spaces between the sintered diamond grains. The method sweeps a diamond powder with a binder to form sintered PCD, reacts said molten binder with a temporary barrier separating said binder and said diamond from a silicon (Si) source, and sweeps said sintered PCD with said Si source to form SiC bonded PCD.

A device for taking up a silicon melt comprises at least one block of a refractory with a capillary structure.

At first, all Sophia Young wanted was to find a job until she could find a husband. Instead, she finds herself working for Scott Kraft, a notoriously unpredictable and demanding tech mogul. She soon becomes more interested in her work in investor relations than in getting married, which she never planned on. She is quickly promoted and becomes an asset at Kraft’s new business, an animation company called Treehouse that’s set to disrupt the movie industry. Fans of Pixar, Apple and Steve Jobs will enjoy the parallels between Jobs and the fictional Kraft. Kraft, who founded a revolutionary technology company called Quince before taking over Treehouse, also creates the first wave of smart phones, known as “Q-phones.” Similarly, author Anna Yen pays homage to Pixar, where she herself worked in investor relations. In the book, Treehouse creates movies like “The Amazings,” and “Treasures,” which seem to be a nod to Pixar’s real-life movies “The Incredibles” and “Toy Story.” As Sophia becomes

A special episode from Inflection Point with Lauren Schiller.