Method and system for forming high accuracy patterns using charged particle beam lithography
A method and system for optical proximity correction (OPC) is disclosed in which a set of shaped beam shots is determined which, when used in a shaped beam charged particle beam writer, will form a pattern on a reticle, where some of the shots overlap, where the pattern on the reticle is an OPC-corrected version of an input pattern, and where the sensitivity of the pattern on the reticle to manufacturing variation is reduced. A method for fracturing or mask data preparation is also disclosed.