A faucet assembly includes a base for mounting adjacent a basin of a sink and a spout projecting upward and outward away from the base and terminating at a water outlet. A light emitter is mounted to one section of the spout and emits a beam of light directed toward another section of the spout, wherein the beam of light does not intersect a region beneath the outlet. A light sensor, mounted to the spout, produces a signal indicating whether the beam of light is striking the light sensor. A control circuit responds to the signal by opening a valve that thereby conveys water to the spout.

A vanity assembly is provided. The vanity assembly can comprise a base, side walls, and a combination sink and countertop. The sink can have a drainage section located near a back side of the sink. The vanity assembly can further comprise a drawer configured to move relative to the sink, the drawer extending in front of the sink and utilizing a substantial portion of the space in front of the sink's drain section for storage. The drawer can have side wall sections and a bottom section configured to facilitate storage of common household items.

A windrower with a harvesting header with a crop cutting assembly for severing crop from the ground windrower has a header pitch sensor for measuring a fore/aft pitch angle and a hydraulic system. The hydraulic system moves the header between an operating height and a raised position, and also controls a fore/aft pitch angle. An electronics control module provides an output to activate solenoid valves in the hydraulic system to move the header between the operating height and the raised position and to select a desired pitch angle. When the header moves from the operating height to the raised position, the electronics control module operates the header hydraulic system to move the header to the zero-tilt condition, and upon lowering the header back the operating height, the electronics control module automatically returns the header to the selected pitch angle it was in at the start of the cycle.

In an apparatus for controlling an unmanned autonomous operating vehicle having an electric motor supplied with power from a battery for operating an operating machine, and magnetic sensors for detecting intensity of a magnetic field of an area wire and controlled to run about in an operating area defined by the area wire through wheels driven by the prime movers to perform an operation using the operating machine and to return to a charging device installed on the area wire so as to charge the battery, there is provided with a turn-back portion formed by bending the area wire at an appropriate position and again bending the area wire to return in a same direction with a predetermined space so as to divide the operating area into a plurality of parts and vehicle running is controlled to be prohibited from going across the turn-back portion.

An electromotive drive device of an electric motor-driven mini-excavator, which is capable of lengthening its operating time, includes an electric power storage device, a motor-generator, a hydraulic pump, a plurality of directional control valves which respectively control the flow of pressurized fluid, and a plurality of operating devices which respectively operate the plurality of directional control valves. The electromotive drive device is provided with a bidirectional converter which decelerates the motor-generator to an idle revolution speed when X seconds have elapsed in a state in which the plurality of directional control valves are all not operated. The bidirectional converter performs regenerative control to convert an inertial force of a rotor of the motor-generator to power and charge the electric power storage device when it decelerates the motor-generator from a standard revolution speed to the idle revolution speed.

A combination tractor and baler is provided to automate tractor stopping and baler wrapping while incorporating operator interaction to improve the efficiency of the tractor and baler combination in operation. Automated control systems and manual operator devices are utilized to improve the timing of the tractor stop and baler wrapping time sequences. Various methods to improve efficiency, including methods to synchronize tractor stop with wrapping activation are provided.

A system and method for controlling a load on an agricultural harvester (100) comprising a first sensor (124, 126, 128, 130) to sense a first load, a second sensor (132, 134, 136, 138) to sense a second load, an electronic control unit (200) coupled to the first sensor and the second sensor, the electronic control unit (200) being configured to determine a difference between the first load and the second load, and to either (a) raise a harvesting head (102) or (b) stop the agricultural harvester (100), or (c) both, when the difference exceeds a threshold load.

A bale turning apparatus for attachment to a baler to generally align the cylindrical of the bales in each row as the bales are released from the baler. Using the disclosed invention, the bales are essentially turned ninety degrees from the orientation of bales from the position that they are typically released from a round baler. By accomplishing this general alignment of the cylindrical axis of each bale in each row, when baling corn stover or other row crops, the bale loading operation can later be done more efficiently by driving down the rows in the same direction as the combine and baler have traveled.

An agricultural work vehicle includes a vehicle body having longitudinally extending sides. An enclosed engine compartment is configured within the vehicle body. An air inlet is defined in side of the vehicle body for intake of air into the engine compartment. A grain bin forward of the engine compartment includes a grain bin extension skirt mounted above the grain bin. An intake housing is mounted over the air inlet in the vehicle body side and includes a forwardly extending portion mounted alongside the grain bin extension with an inlet opening oriented so as draw air primarily from an area forward of the engine compartment and above the vehicle body.

A tire protection mount may include a bracket that includes a central platform and an arm. The central platform is connected the arm to define an opening. The tire protection mount further includes a shield connected to the bracket that substantially covers the opening.

A harvesting header includes a cutter bed having a plurality of cutting elements arranged transverse to the header and a crop chopping and conditioning region having a crop chopping device and a crop conditioning device. The crop chopping device is configured to chop crop cut by the cutter bed into smaller lengths and the crop conditioning device is configured to crimp the crop to aid in drying. The first chopping roller has a tubular, cylindrically-shaped body and a plurality of parallel knife-mounting lugs extending radially outward along substantially the full length of the body. A plurality of chopping knives are attached to the knife-mounting lugs and arranged around the body, each chopping knife having a length that is shorter than the length of the knife-mounting lug to which it is attached such that each chopping knife covers only a portion of the lateral length of the first chopping roller.

A conditioning device for a forage harvester is equipped with a first roller, profiled in the axial direction, and a second roller, also profiled in the axial direction. The two rollers are rotated, around their axes, in opposite directions and are aligned parallel to one another. An element, profiled, in the axial direction, in a manner complementary to the profile of the first roller and adjacent to the circumference of the first roller, for the removal of crop residues from the roller, extends in a circular arc over a part of the circumference of the first roller.

A suspension system for forage rakes having at least one floating forage rake wheel has a hydraulic cylinder is used for both lift and suspension of the floating forage rake wheel. A hydraulic accumulator provides expansion room for hydraulic fluid to move in and out of the hydraulic cylinder during suspension.

An agricultural working machine has a one control/regulating unit designed to adjust and monitor working parameters, quality parameters or both of the agricultural working machine that influence a harvesting process. The adjusting and monitoring are carried out in an automatable manner by the control/regulating unit using stored families of characteristics. The agricultural working machine also has at least one display device for depicting setpoint values and actual values of the working parameters, quality parameters or both. The control/regulating unit actuates defined measurement points in the stored families of characteristics and the specifically actuated measurement points are located in the boundary regions of the family of characteristics or outside the active working region of the particular family of characteristics.

A mower carrying a rotary cutting deck has a height of cut system for adjusting the vertical position of the deck relative to the mower frame for changing or adjusting the height of cut. The height of cut system comprises a pair of parallel cross shafts that carry a plurality of pivotal suspension linkages that connect to the deck, the cross shafts and linkages pivoting jointly with one another and with a pivotal control lever. One of the cross shafts carries a torsion spring to counterbalance the weight of the deck. The control lever is maintained in a plurality of adjusted pivotal positions by a height selection bracket fixed to the frame with the height selection bracket being capable of having its position changed or adjusted relative to the frame by a single adjustment bolt. Each suspension linkage has its effective length adjusted by turning a threaded adjuster carried at the upper end of a connecting rod that is part of each linkage to allow the deck to be leveled relative to a reference plane. The adjustment of the height selection bracket is accomplished without affecting the length adjustments previously made to any of the suspension linkages.

A flail rotor head attachment for use with any type harvesting machine having crop residue processing elements and including an input opening for receiving crop residue. The attachment includes a frame structure for operatively coupling the attachment to the harvesting machine, a flail rotor and an auger each mounted on the frame structure and a drive mechanism for rotating the flail rotor and the auger. The flail rotor includes a plurality of cutting elements for picking up and chopping crop residue from a field. The auger includes at least two flightings positioned in opposite directions for funneling crop residue towards the opening of the harvesting machine. Another embodiment includes a rake positioned between the flail rotor and the auger, the rake and the flail rotor rotating in the same direction and the auger rotating in an opposite direction.

A riding lawn mower may include a cutting deck coupled to a cutting blade, an engine, a deck drive coupled to the engine to receive power for operating the cutting blade, a ground drive coupled to the engine to receive power for movement of the riding lawn mower over ground, and a friction drive coupling the deck drive to the engine.

A vehicle and a method of controlling a dynamometer mode operation of a vehicle that includes requesting the dynamometer mode; monitoring for at least one non-dynamometer vehicle operating condition; if at least one of the non-dynamometer vehicle operating conditions is detected, prohibiting dynamometer mode; and if none of the non-dynamometer vehicle operating conditions is detected, operating the vehicle in dynamometer mode.

A reel lawn mower which has a connection structure for connecting a reel cutting unit to a main body. The reel cutting unit has a spiral cutting reel which is rotated by a prime mover to cut grass together with a bedknife. In the connection structure, in order to connect the reel cutting unit to the main body so that the reel cutting unit rolls around a virtual horizontal line perpendicular to the shaft center of the cutting reel in the center of the axial direction of the cutting reel, the reel cutting unit includes a connecting arm with an arc portion shaped so as to follow a virtual arc centered on the virtual horizontal line. The connecting arm is slidably supported so as to prevent the arc portion from coming off the virtual arc.

A corn header has a row unit frame and an auger sweeping ears of corn toward a center of the corn header. A corn row divider assembly has a snout and gatherer hood hingeably coupled to, and aft of, the snout. An aft end of the gatherer hood is located beneath and to the rear of the fore end of the auger in an operational configuration of the divider assembly. The divider assembly further has a four-point hinge assembly coupling the aft end of the gatherer hood to the row unit frame. The four-point hinge assembly is configured to pivot the gatherer hood between the operational configuration and a non-operational configuration in which the gatherer hood is in a raised condition. The four-point hinge assembly moves the aft end of the gatherer hood forward so that the gatherer hood clears the auger when pivoting to the non-operational configuration.

A grass collection system may have an impeller with a through-shaft that mechanically couples power take off (PTO) energy to the mower deck. The PTO shaft may pass through the impeller and blower housing to power the mower deck, resulting in a compact mechanism. The PTO shaft may pass through a grass tunnel that connects between the blower housing and the mower deck, then may be connected to the mower deck to power the mower blades. The grass collection system may be deployed on a front mounted deck tractor that has front wheel drive. The front wheels may each have a hydrostatic pump and gearbox, and the PTO shaft may pass between or under the front wheel drive systems in connecting to the mower deck.

A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

An example method includes providing a packaging device includes a substrate having an integrated circuit die mounting region. A plurality of microstructures, each including an outer insulating layer over a conductive material, are disposed proximate a side of the integrated circuit die mounting region. An underfill material is disposed between the substrate and the integrated circuit die, the microstructures preventing spread of the underfill. In another example method, a via can be formed in a substrate and the substrate etched to form a bump or pillar from the via. An insulating material can be formed over the bump or pillar. In another example method, a photoresist deposited over a seed layer and patterned to form openings. A conductive material is plated in the openings, forming a plurality of pillars or bumps. The photoresist and exposed seed layer are removed. The conductive material is oxidized to form an insulating material.

A method of making a semiconductor device can include providing a wafer comprising a plurality of semiconductor die, wherein each semiconductor die comprises an active surface and a backside opposite the active surface. A photosensitive layer can be formed over the wafer and on a backside of each of the plurality of semiconductor die within the wafer with a coating machine. An identifying mark can be formed within the photosensitive layer for each of the plurality of semiconductor die with a digital exposure machine and a developer, wherein a thickness of the identifying mark is less than or equal to 50 percent of a thickness of the photosensitive layer. The photosensitive layer can be cured. The wafer can be singulated into a plurality of semiconductor devices.

A semiconductor package is provided, including: an insulating base body having a first surface with an opening and a second surface opposite to the first surface; an insulating extending body extending outward from an edge of the first surface of the insulating base body, wherein the insulating extending body is less in thickness than the insulating base body; an electronic element having opposite active and inactive surfaces and disposed in the opening with its inactive surface facing the insulating base body; a dielectric layer formed in the opening of the insulating base body and on the first surface of the insulating base body, the insulating extending body and the active surface of the electronic element; and a circuit layer formed on the dielectric layer and electrically connected to the electronic element. The configuration of the insulating layer of the invention facilitates to enhance the overall structural rigidity of the package.

A semiconductor device includes a first moisture-resistant ring disposed in a peripheral region surrounding a circuit region on a semiconductor substrate in such a way as to surround the circuit region and a second moisture-resistant ring disposed in the peripheral region in such a way as to surround the first moisture-resistant ring.

Presented herein are an interconnect structure and method for forming the same. The interconnect structure includes a contact pad disposed over a substrate and a connector disposed over the substrate and spaced apart from the contact pad. A passivation layer is disposed over the contact pad and over connector, the passivation layer having a contact pad opening, a connector opening, and a mounting pad opening. A post passivation layer including a trace and a mounting pad is disposed over the passivation layer. The trace may be disposed in the contact pad opening and contacting the mounting pad, and further disposed in the connector opening and contacting the connector. The mounting pad may be disposed in the mounting pad opening and contacting the opening. The mounting pad may be separated from the trace by a trace gap, which may optionally be at least 10 μm.

A semiconductor mounting apparatus includes a storing unit that stores a liquid or a gas, a contact unit that comes into contact with a semiconductor chip when the storing unit is filled with the liquid or the gas, and a sucking unit that sucks up the semiconductor chip to bring the semiconductor chip into close contact with the contact unit.

A system for determining thickness variation values of a semiconductor substrate comprises a substrate vacuumed to a pedestal that defines a reference plane for measuring the substrate. A measurement probe assembly determines substrate CTV and BTV values, and defines a substrate slope angle. A thermal bonding assembly attaches a die to the substrate at a bonding angle congruent with the substrate slope angle. A plurality of substrates are measured using the same reference plane on the pedestal. Associated methods and processes are disclosed.

A bump-on-trace (BOT) interconnection in a package and methods of making the BOT interconnection are provided. An embodiment BOT interconnection comprises a landing trace including a distal end, a conductive pillar extending at least to the distal end of the landing trace; and a solder feature electrically coupling the landing trace and the conductive pillar. In an embodiment, the conductive pillar overhangs the end surface of the landing trace. In another embodiment, the landing trace includes one or more recesses for trapping the solder feature after reflow. Therefore, a wetting area available to the solder feature is increased while permitting the bump pitch of the package to remain small.

A method of ultrasonically bonding semiconductor elements includes the steps of: (a) aligning surfaces of a plurality of first conductive structures of a first semiconductor element to respective surfaces of a plurality of second conductive structures of a second semiconductor element; (b) ultrasonically forming tack bonds between ones of the first conductive structures and respective ones of the second conductive structures; and (c) forming completed bonds between the first conductive structures and the second conductive structures.

Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.

A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.

A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.

A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

Manufacturing methods of JFET-type compact three-dimensional memory (3D-MC) are disclosed. In a memory level stacked above the substrate, an x-line extends from a memory array to an above-substrate decoding stage. A JFET-type transistor is formed on the x-line as a decoding device for the above-substrate decoding stage, where the overlap portion of the x-line with the control-line (c-line) is semi-conductive.

A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.

A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor.

To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

A method of fabricating a semiconductor device includes forming a gate strip including a dummy electrode and a TiN layer. The method includes removing a first portion of the dummy electrode to form a first opening over a P-active region and an isolation region. The method includes performing an oxygen-containing plasma treatment on a first portion of the TiN layer; and filling the first opening with a first metal material. The method includes removing a second portion of the dummy electrode to form a second opening over an N-active region and the isolation region. The method includes performing a nitrogen-containing plasma treatment on a second portion of the TiN layer; and filling the second opening with a second metal material. The second portion of the TiN layer connects to the first portion of the TiN layer over the isolation region.

A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The semiconductor structure also includes a patterned source trench dielectric cap forming an insulated portion and an exposed portion of the source trench conductive filler, and a source contact layer coupling the source region to the exposed portion of the source trench conductive filler, the insulated portion of the source trench conductive filler increasing resistance between the source contact layer and the source trench conductive filler under the patterned source trench dielectric cap. The source trench is a serpentine source trench having a plurality of parallel portions connected by a plurality of curved portions.

A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP layer formed over the first SiP layer and in the recess, wherein the second SiP layer has a phosphorus concentration higher than that of the first SiP layer.

A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.