A metal material is provided with a bismuth coating which enables the subsequent coating to be accomplished at a high throwing power, and has excellent corrosion resistance, coating adhesion and is able to be produced with reduced damage to the environment. The metal material has a surface and a bismuth-containing layer deposited on at least a part of the surface of the metal material, wherein the percentage of bismuth atoms in the number of atoms in the surface layer of the metal material with a bismuth coating is at least 10%.

The invention relates to design of short oligonucleotides and analogs thereof (such as, di-, and trinucleotide compounds) useful for various therapeutic applications. It is believed that the compounds of the invention can be used as antiviral agents, anticancer agents and so on. In certain embodiments, the compounds of the invention can modulate immune-stimulatory pathways and non-TLR pathways. The invention also relates to design modified oligonucleotides for therapeutic applications, by excluding nucleotide segments having off-target effects from the modified oligonucleotides. In another aspect, the invention provides pharmaceutical compositions including one or more compounds of the invention. It is believed that the compounds and compositions as described herein have therapeutic utility against a variety of diseases, including viral diseases, autoimmune diseases (such as, allergy, asthma, and inflammatory disorders) and cancer.

A tongue pulled spreader and grader system having a pair of spaced apart sidewalls and cross beams to define a frame portion, a plurality of moveable or fixed blades extending between the sidewalls, each blade positionable along the length of each sidewall and fixed in position at a predetermined angle; a tongue for mounting the frame to the rear of a vehicle; a pair of wheels positioned on an axle on either side of the sidewalls; means for manually or hydraulically extending the wheels to a down position to make contact with a surface in order to transport the spreader and grader and for retracting the wheels to an up position so that the spreader and grader can undertake the grading process. The spreader and grader can attach to and be operated by ATVs, SUVs, light trucks, lawn tractors, sub compact tractors, side by side ATVs and fork trucks.

A system for determining a cut location at a work surface includes a position sensor and a controller. The controller stores a final design plane of the work surface and determines an actual profile of the work surface. A plurality of target profiles extending along a path are determined, each corresponding to a cut location. The target profiles are based at least in part upon the cut location, a loading profile, slot parameters, and the actual profile of the work surface. The controller is further configured to determine a lowest cost target profile and the lowest cost target profile defines an optimized cut location. A method is also provided.

A ripping mechanism for a vehicle has a support frame. A ripping member has an engagement head that is configured for plowing a groove in the ground. The ripping member is preferably positionable in a selected working position and working orientation by adjustment of the support frame. The ripping member is preferably movable relative to the support frame to cause reciprocating movement of the engagement head at least partially longitudinally. A tilt adjustment cylinder is preferably operable to orient the ripping member in the selected orientation. A vibrator mechanism is preferably operatively connected to the ripping member and activatable to cause reciprocating movement of the engagement head at least partially longitudinally.

A supplemental control system for a materials handling vehicle comprises a wearable control device, and a corresponding receiver on the materials handling vehicle. The wearable control device is donned by an operator interacting with the materials handling vehicle, and comprises a wireless transmitter to be worn on the wrist of the operator and a travel control communicably coupled to the wireless transmitter. Actuation of the travel control causes the wireless transmitter to transmit a first type signal designating a request to the vehicle. The receiver is supported by the vehicle for receiving transmissions from the wireless transmitter.

A machine includes a plurality of ground engaging elements and an operator control station supported on a frame. A work tool is pivotably attached to the frame using a lift arm assembly and a tilt linkage. At least one device measures a quantity associated with at least one of the lift arm assembly, the tilt linkage, and the work tool. An electronic controller, in communication with an operator display and the at least one device. The electronic controller is configured to store an operator selected orientation of the work tool, calculate a current orientation of the work tool based on the quantity, and calculate a deviation of the current orientation from the operator selected orientation. A visual representation of the deviation is displayed on the operator display.

An articulated cutting head and conveyor mount for sod harvesting machines. The invention provides a linkage design that can provide many benefits including: allowing the operator to see the cutting operation, enabling the high lifting of the cutting head for service and maneuvering, managing the vertical bending load of the ground reference roller, providing high transverse stiffness, maintaining the position of the conveyor relative to the cutting head. The linkage design can include fewer parts than previous designs while still being robust and durable. As such, cutting heads employing the linkage design of the present invention can produce higher quality slabs with less service and maintenance than when using current designs.

The disclosure describes, in one aspect, a system and method for controlling a rotation angle of a blade of a motor grader having a front frame operatively coupled to a rear frame at a point defining an articulation angle between the front and rear frames. The control system includes at least one sensor operatively associated with the blade, at least one sensor operatively associated with a wheel, at least one sensor operatively associated with at least one of the front frame or the rear frame, and a controller operatively coupled to the at least one sensors. The controller is adapted to determine a current position of the blade, determine a wheel steering angle, determine an articulation angle, and control the rotation angle of the blade based in part on the wheel steering angle and the articulation angle.

An agricultural machine (101; 201; 301) comprising two mainly parallel, in the direction of travel, cross-running disc implement rows (102a, 102c; 202a, 202b; 304a, 304b), wherein the orientation of the disc implements (102b, 102d; 203a, 203b; 302a, 302b) contained in the mentioned disc implement rows is arranged so that the fore row (102a; 202a; 304a) has disc implements that are mounted on a frame beam (110; 211; 303) and that are angled outwards and backwards towards the sides of the machine and in a dividing line mainly parallel to the direction of travel of the machine form a first point of change (208a, 304c), and the rear row (102c, 202b; 304b) has disc implements (102d; 203b; 302b) that are mounted on a frame beam (110; 211; 303) and that are angled inwards and backwards from the sides of the machine and in the dividing line form a second point of change (208b, 304a), wherein the fore row is adapted to throw soil from the first point of change outwards towards the sides of the machine and the other row is adapted to throw soil from the sides of the machine inwards towards the second point of change. The dividing line with the first point of change (208a, 304c), and with the second point of change (208b, 304) is arranged at a predetermined distance from the centre line of the machine (101; 201; 301) across the direction of travel.

A trailer includes a chassis having a hitch, an axle having a pair of tractive elements rotatably coupled to the chassis, an actuator coupled to the chassis and positioned to steer the pair of tractive elements, and a processing circuit. The processing circuit has an input for receiving a transmission gear of a tractor vehicle and a variable output for engaging the actuator. The processing circuit is configured to control the steering of the pair of tractive elements according to a control strategy that varies based on the transmission gear of the tractor vehicle.

A swing control apparatus and a swing control method for a construction machine are provided. The swing control apparatus includes a start position estimation unit, a stop target position calculation unit, and a swing motor position control unit. Even if an operator releases a lever or commands a stop at different times, an upper swing structure of the construction machine (for example, excavator) can be stopped within a predetermined range, and thus the inconvenience caused by an additional driving operation, which is required as the stop position differs according to the time point where the stop command starts, can be solved.

A system for determining a cut location at a work surface includes a position sensor and a controller. The controller stores a desired operating parameter and a final design plane of the work surface and determines an actual profile of the work surface. The controller determines a plurality of target profiles corresponding to different cut locations. The target profiles are based at least in part upon the cut location, a loading profile, slot parameters, and the actual profile of the work surface. The controller further determines an optimized target profile relative to the desired operating parameter and the optimized target profile defines an optimized cut location.

A brake control system and method for motor vehicles is provided with an electronic control unit, by which, when the motor vehicle is stationary, a parking brake function can be activated manually or automatically. Its deactivation occurs upon reaching a predefined release condition. In the presence of a release condition the brake pressure, which was built up for the parking brake function, is released in a time offset manner at least in relation to the axles of the vehicle by way of the control unit.

A hitch on a vehicle is raised and lowered by a hydraulic actuator controlled by an electrically operated valve. A control system receives a command that indicates a designated velocity and uses the command to operate the valve. Based on a reference external force exerted on the hitch, the control system is configured with relationships for converting a plurality of command values to corresponding electric current levels for operating the valve. The control system compensates for effects due to differences between the actual force acting on the hitch and the reference external force. Velocity feedback adjusts the electric current level applied to the valve. The passive load force control provides a predictor of the hitch load force to eliminate overshoot/undershoot of hitch motion. During hitch motion, the velocity feedback also compensates for effects due to load and hitch geometry changes that occur.

An apparatus for extracting and collecting particulate infill from an infilled artificial turf field. A vehicle has a first forward end and a second rearward end. An infill extractor is located at the first end of the vehicle and adapted to extract infill from a strip of infilled athletic turf. Extracted infill falls into a bottom section of the infill extractor. An infill mover is secured to the vehicle and adapted to move the extracted infill from the bottom section of the infill extractor toward the second end of the vehicle. An infill collector is connected to the second end of the vehicle and operable to cooperate with the infill mover to collect the moved infill. The infill collector includes a frame that is laterally movable relative to the vehicle from an operative “in use” position to a stowed position.

A control system for a machine is disclosed. The system includes a ripper sensor associated with a ripper of the machine configured to generate a signal indicative of a position of the ripper. The system includes a steering command sensor associated with a steering control module of the machine. The steering command sensor is configured to generate a signal indicative of a steering command of the machine. The system further includes a controller configured to receive the signals indicative of the position of the ripper and the steering command of the machine. The controller is configured to execute an action based on the engaged state of the ripper and the steering command of the machine.

A drive system for a mobile machine is disclosed. The drive system may have a travel speed sensor, at least one traction device speed sensor, and a controller in communication with the travel speed sensor and the at least one traction device speed sensor. The controller may be configured to determine a slip value associated with a traction device of the mobile machine based on signals generated by the travel speed sensor and the at least one traction device speed sensor, and determine a torque output value of the mobile machine. The control may also be configured to make a comparison of the slip value and the torque output value with a pull-slip curve stored in memory, and selectively update the pull-slip curve based on the comparison.

Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied.

A display device includes a pixel portion including a plurality of pixels each including a first transistor, a second transistor, and a light-emitting element, in which a gate of the first transistor is electrically connected to a scan line, one of a source and a drain of the first transistor is electrically connected to a signal line, and the other of them is electrically connected to a gate of the second transistor; one of a source and a drain of the second transistor is electrically connected to a power supply line and the other of them is electrically connected to the light-emitting element, and the first transistor includes an oxide semiconductor layer. A period when the display device displays a still image includes a period in which output of a signal to all the scan lines in the pixel portion is stopped.

A semiconductor light-emitting device includes a lamination of semiconductor layers including a first layer of a first conductivity type, an active layer, and a second layer of a second conductivity type; a transparent conductive film formed on a principal surface of the lamination and having an opening; a pad electrode formed on part the opening; and a wiring electrode connected with the pad electrode, formed on another part of the opening while partially overlapping the transparent conductive film; wherein contact resistance between the transparent conductive film and the lamination is larger than contact resistance between the wiring electrode and the lamination. Field concentration at the wiring electrode upon application of high voltage is mitigated by the overlapping transparent conductive film.

An organic light emitting diode (OLED) display a includes: a substrate; an organic light emitting element on the substrate and including a first electrode, a light emission layer, and a second electrode; and an encapsulation layer on the substrate while covering the organic light emitting element. The encapsulation layer includes an organic layer and an inorganic layer. A mixed area, where organic materials forming the organic layer and inorganic materials forming the inorganic layer co-exist along a plane direction of the encapsulation layer, is formed at the boundary between the organic layer and the inorganic layer.

The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected to an adherend, the film for flip chip type semiconductor back surface containing an inorganic filler in an amount within a range of 70% by weight to 95% by weight based on the whole of the film for flip chip type semiconductor back surface.

An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.

A package includes a first die and a second die underlying the first die and in a same first die stack as the first die. The second die includes a first portion overlapped by the first die, and a second portion not overlapped by the first die. A first Thermal Interface Material (TIM) is over and contacting a top surface of the first die. A heat dissipating lid has a first bottom surface contacting the first TIM. A second TIM is over and contacting the second portion of the second die. A heat dissipating ring is over and contacting the second TIM.

The band tail state and defects in the band gap are reduced as much as possible, whereby optical absorption of energy which is in the vicinity of the band gap or less than or equal to the band gap is reduced. In that case, not by merely optimizing conditions of manufacturing an oxide semiconductor film, but by making an oxide semiconductor to be a substantially intrinsic semiconductor or extremely close to an intrinsic semiconductor, defects on which irradiation light acts are reduced and the effect of light irradiation is reduced essentially. That is, even in the case where light with a wavelength of 350 nm is delivered at 1×1013 photons/cm2·sec, a channel region of a transistor is formed using an oxide semiconductor, in which the absolute value of the amount of the variation in the threshold voltage is less than or equal to 0.65 V.

According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.

A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer. The substrate intermediate layer and the device intermediate layer comprise a distribution in their compositions along a thickness coordinate.

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A light-emitting element includes a first electrode, a first light-emitting layer formed over the first electrode, a second light-emitting layer formed on and in contact with the first light-emitting layer to be in contact therewith, and a second electrode formed over the second light-emitting layer. The first light-emitting layer includes a first light-emitting substance and a hole-transporting organic compound, and the second light-emitting layer includes a second light-emitting substance and an electron-transporting organic compound. Substances are selected such that a difference in LUMO levels between the first light-emitting substance, the second light-emitting substance, and the electron-transporting organic compound is 0.2 eV or less, a difference in HOMO levels between the hole-transporting organic compound, the first light-emitting substance, and the second light-emitting substance is 0.2 eV or less, and a difference in LUMO levels between the hole-transporting organic compound and the first light-emitting substance is greater than 0.3 eV.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

Some embodiments include transistors having a channel region under a gate, having a source/drain region laterally spaced from the channel region by an active region, and having one or more dielectric features extending through the active region in a configuration which precludes any straight-line lateral conductive path from the channel region to the source/drain region. The dielectric features may be spaced-apart islands in some configurations. The dielectric features may be multi-branched interlocking structures in some configurations.

A microelectronic assembly includes a first component with first conductive elements; a second component with second conductive elements; a bond metal; and an underfill layer. The posts have a height above the respective surface from which the posts project. A bond metal can be disposed between respective pairs of conductive elements, each pair including at least one of the posts and at least one of the first or second conductive elements confronting the at least one post. The bond metal can contact edges of the posts along at least one half the height of the posts. An underfill layer contacts and bonds the first and second surfaces of the first and second components. A residue of the underfill layer may be present at at least one interfacial surfaces between at least some of the posts and the bond metal or may be present within the bond metal.

Methods, devices, and systems are provided for a select device that can include a semiconductive stack of at least one semiconductive material formed on a first electrode, where the semiconductive stack can have a thickness of about 700 angstroms (Å) or less. Each of the at least one semiconductive material can have an associated band gap of about 4 electron volts (eV) or less and a second electrode can be formed on the semiconductive stack.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.