Methods, devices and system are provided. One method includes capturing activity data associated with activity of a user via a device. The activity data is captured over time, and the activity data is quantifiable by a plurality of metrics. The method includes storing the activity data in storage of the device and, from time to time, connecting the device with a computing device over a wireless communication link. The method defines using a first transfer rate for transferring activity data captured and stored over a period of time. The first transfer rate is used following startup of an activity tracking application on the computing device The method also defines using a second transfer rate for transferring activity data from the device to the computing device for display of the activity data in substantial-real time on the computing device.

A shift register includes cascade-connected stages, each of which includes a data latch and an output stage. In at least one embodiment, the latch has a single data input which, in use, receives a date signal from a preceding or succeeding stage. The output stage includes a first switch, which passes a clock signal to the stage output when the output stage is activated by the latch. The output stage also comprises a second switch, which passes the lower supply voltage to the stage output when the output stage is inactive.

An active level shift (ALS) driver circuit and a liquid crystal display apparatus including the ALS driver circuit are disclosed. The ALS driver circuit includes an input unit configured to apply a first polarity voltage to a first node and to apply a second polarity voltage to a second node, a level compensation unit configured to adjust the voltages of the first node and the second node, and an output unit configured to alternately output a first power voltage and a second power voltage according to the adjusted voltages of the first and second nodes.

An open loop clock divider circuit includes (a) a first divider configured to receive an incoming clock signal and output a first divided clock signal, (b) a flying-adder synthesizer configured to fractionally divide the first divided clock signal and output a fractionally divided clock signal, and (c) a second divider configured to receive the fractionally divided clock signal and output a second divided clock signal. The open loop clock divider circuit advantageously provides a fractional divider in which there is no feedback loop between the source frequency (fs) and the destination frequency (fd). Methods of generating a divided clock signal involving the open loop clock divider circuit are also disclosed.

A digital fractional frequency divider for fractionally dividing a digital frequency signal can include a plurality of clock division counter modules, a plurality of sampling modules, and a summing module. The plurality of clock division counter modules can each receive an input clock signal that is phase-shifted from a remaining plurality of input clock signals. Each clock division counter module can generate a long periodic pulse from the received input clock signal. Each sampling module can couple to an output of one of the plurality of clock division counter modules and can generate a short periodic pulse from the long periodic pulse. The summing module can sum the plurality of short periodic pulses to generate a fractional frequency clock signal.

A trailer for transporting an agricultural harvesting head includes a pair of saddles for supporting the head. The saddles are adjustably mounted on the trailer frame and are simultaneously moved together by an actuator operated by a remote control. The saddles are connected by telescoping rod sections so that the spacing between the saddles is adjustable.

An active termination circuit for a differential receiver includes a first receiver element configured to receive a first component of a differential signal, a second receiver element configured to receive a second component of a differential signal, a common mode measurement element configured to receive the differential signal and generate a transmit common mode signal (Vcm) representing an average value of the differential signal, and a receiver (RX) common mode signal node. The termination circuit also comprises an active element configured to receive the transmit common mode signal (Vcm) and provide an output to the receiver common mode signal node, the output configured to drive the value of the signal at the receiver common mode signal node to the value of the transmit common mode signal (Vcm), and a capacitive element coupled to the receiver common mode signal node in parallel with the active element.

A floorplan for a Structured ASIC chip is shown having a core region containing memory and VCLB logic cells surrounded by a plurality of IO connection fabrics that include a first IO connection fabric comprising IO sub-banks connecting the core of the chip to pins for external signals to the core, a first high-speed routing fabric disposed along the east-west vertical top of the core and connects the core to high-speed IO such as SerDes; a network-aware connection fabric connects the core to a microcontroller primarily for testing and repair of the memory in the core; and a second-high speed routing fabric is disposed on the north-south vertical sides of the core and communicates with the IO sub-banks. The VCLB Structured ASIC chip is manufactured on a 28 nm CMOS process lithographic node or smaller, having several metal layers and preferably is programmed on a single via layer.

There are provided an accumulator-type fractional N-PLL synthesizer for suppressing the fractional spurious caused by periodically switching a frequency division number of a fractional frequency divider, and a control method thereof. In an accumulator-type fractional N-PLL synthesizer (100), a pulse signal proportional to a fractional phase error occurring between a reference signal and an output signal of a fractional divider (112) for feeding back an output of a VCO (115) of an output stage to a preceding stage is generated using an error signal from an accumulator (120). Through the use of the pulse signal, pulse widths of a UP signal and a DN signal output from a phase detector (140) are controlled so as to reduce a fractional phase error occurring between the UP signal and the DN signal. Thus, the fractional spurious caused by periodically switching the frequency division number of the fractional divider (112) is suppressed.

The present invention discloses an Oven Controlled Crystal Oscillator and a manufacturing method thereof. The Oven Controlled Crystal Oscillator comprises a thermostatic bath, a heating device, a PCB and a signal generating element, where the signal generating element is used for generating a signal of a certain frequency, the heating device, the PCB and the signal generating element are mounted in the thermostatic bath, the signal generating element is mounted in a groove formed on one side of the PCB, while the heating device is mounted against the other side of the PCB that is opposite to the groove. The signal generating element may be a passive crystal resonator or an active crystal oscillator. The Oven Controlled Crystal Oscillator according to the invention is advantageous for a small volume and a high temperature control precision.

Disclosed are a phase locked loop (PLL) of a digital scheme and a method thereof. More specifically, disclosed are a digital phase locked loop having a time-to-digital converter (TDC), a digital loop filter (DLF), and a digitally controlled oscillator (DCO), and that is designed to have a constant jitter characteristic at all times even though an operating condition of a circuit varies according to a process, voltage, temperature (PVT) change, and a method thereof.

A solenoid actuator comprising an armature member that engages a spool including a spool cap on an end of the spool that is axially movable relative to the spool. A bore in the spool allows fluid to flow from a control port to the spool cap, such that pressure is established in the spool cap. The pressure established in the spool cap acts on the spool with a force directly proportional to the control pressure and the fluid-contacting area inside the spool cap.

A most recent electrostatic capacitance value for a backup capacitor is measured periodically. Each time the most recent electrostatic capacitance value is measured, a charging voltage (a required charging voltage) that is required in order to cause a return operation of a valve from the setting opening at that time to an emergency opening/closing position (for example, the fully closed position) is calculated based on the electrostatic capacitance value that has been measured, and the terminal voltage of the backup capacitor is adjusted so as to become equal to the calculated required charging voltage.

Power-efficient actuator apparatus and methods. In one exemplary embodiment, the actuator assembly utilizes a shape memory alloy (SMA) filament driven by an electronic power source to induce movement in the underlying assembly to actuate a load (e.g., water valve). In addition, a circuit board is included which allows the actuator assembly to be readily incorporated or retrofit into a wide range of systems such that the signal characteristics of the supply line can, among other applications, be conditioned in order to protect the SMA filament. Furthermore, the circuit board can also readily be adapted for use with “green” power sources such as photovoltaic systems and the like. Methods for manufacturing and utilizing the aforementioned actuator assembly are also disclosed.

A direct acting solenoid actuator includes an armature and associated push pin that are suspended from certain fixed solenoid components, such as a pole piece and/or flux sleeve, by a fully floating cage of rolling elements. The fixed solenoid component may comprise a pole piece and/or a flux sleeve. The pole piece may include stops to limit movement of the cage of rolling elements in the axial direction.

An actuator includes a first piston and a second piston. The first piston has a piston ring that separates a first chamber from a second chamber of the actuator. The first piston has an interior chamber that communicates with the first chamber. The second piston is disposed within the interior chamber of the first piston so as to be movable with respect thereto. The second piston has a surface that interfaces with the second chamber.

The invention relates to a valve actuator (2), comprising a magnetic core (6) with an interspace (8) and at least one bifurcating branch (7), at least one variable magnetic field generating device (16), at least one permanent magnetic field generating device (13) and at least one movable magnetic component (12), wherein the bifurcating branch (7) defines a first region (4) and a second region (5) of said magnetic core (6). Said movable magnetic component (12) is movably arranged within said interspace (8) of said magnetic core (6) in such a way that a first gap (19) is formed between a first surface (23) of said movable magnetic component (12) and a first surface (22) of said interspace (8) of said magnetic core (6), a second gap (20) is formed between a second surface (24) of said movable magnetic component (12) and a second surface (25) of said interspace (8) of said magnetic core (6), and a third gap (21) is formed between a third surface (27) of said movable magnetic component (12) and a third surface (26) of said bifurcating branch (7) of said magnetic core (6). At least one of said variable magnetic field generating devices (48, 49) is associated with said first region (4) of said magnetic core (6) and at least one of said permanent magnetic field generating devices (13) is associated with said second region (5) of said magnetic core (6). Said valve actuator (2) is designed and arranged in a way that a magnetic flux, generated by at least one at least one of said variable magnetic field generating devices (16) is able to exert a force on said at least one movable magnetic component (12) and is able to cancel the magnetic flux (48, 49), generated by at least one of said permanent magnetic field generating devices (13). At least one magnetic flux limiting means (7, 12) is provided, whose magnetic flux limit can be reached or exceeded.

A drain plug assembly that has particular application for sealing a drain hole in a high voltage battery compartment on a vehicle. The plug assembly includes a plug that inserted into the drain hole. The plug assembly further includes a return spring coupled to the plug and causing the plug to be biased into the drain hole. The plug assembly also includes at least one shape memory alloy device coupled to the plug and a support structure. The SMA device receives an electrical current that causes the device to contract and move the plug out of the drain hole against the bias of the return spring.

A method for operating a processing system, in which product units of different formats are processed. The processing system contains a plurality of processing devices that are arranged one after the other in a processing line. In the event of a format changeover, certain component arrangements arranged in the processing system must be adapted to the new product format. In the event of an upcoming format change, a gap in the conveyed goods is generated while the conveying operation is maintained, wherein the gap in the conveyed goods runs through the processing system along the processing devices. As soon as the gap in the conveyed goods runs through a component arrangement to be adapted to the new format, the format is changed over at the component arrangement while the gap in the conveyed goods runs through the component arrangement.

The stack package includes a first semiconductor package and a second semiconductor package. The first semiconductor package includes a first substrate having a first modulus and at least one semiconductor chip mounted on the first substrate. The second semiconductor package stacked on the first semiconductor package and includes a second substrate having a second modulus and at least one semiconductor chip mounted on the second substrate. The second modulus is less than the first modulus. Even in the event that the first semiconductor package is under severe warpage due to a temperature change, the flexible second substrate, which includes e.g., polyimide or poly ethylene terephthalate, of the second semiconductor package may be less sensitive to the temperature change, thereby improving reliability of the stack package.

A through silicon via with sidewall roughness and methods of manufacturing the same are disclosed. The method includes forming a via in a substrate and roughening a sidewall of the via by depositing material within the via. The method further includes removing a backside of the substrate to form a through via with a roughened sidewall structure.

A multi-chip package is provided. The multi-chip package includes a plurality of chips including at least one bad chip and at least one good chip that are stacked and a plurality of through electrodes each penetrating the chips. A logic circuit included in the at least one bad chip is isolated from each of the plurality of through electrodes.

In various embodiments, a chip arrangement is provided. The chip arrangement may include a chip carrier and a chip mounted on the chip carrier. The chip may include at least two chip contacts and an insulating adhesive between the chip and the chip carrier to adhere the chip to the chip carrier. The at least two chip contacts may be electrically coupled to the chip carrier.

In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

A method for manufacturing a light-emitting device includes a step of forming an etching resistant protection layer on a substrate provided with an organic planarizing layer, a step of forming a plurality of electrodes on the etching resistant protection layer, a step of forming an organic compound layer on the substrate provided with the plurality of electrodes, a step of forming a resist layer on the organic compound layer formed on parts of electrodes among the plurality of electrodes using a photolithographic method, and a step of removing the organic compound layer in a region not covered with the resist layer by dry etching, wherein an entire surface of the organic planarizing layer on the substrate on which steps up to the step of forming the plurality of electrodes have been performed is covered with at least one of the etching resistant protection layer and the electrode.

An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.

It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

Disclosed is a semiconductor device including an oxide semiconductor film. A first oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 15 nm is formed over a gate insulating layer. First heat treatment is performed so that crystal growth from a surface of the first oxide semiconductor film to the inside thereof is caused, whereby a first crystal layer is formed. A second oxide semiconductor film with a thickness greater than that of the first oxide semiconductor film is formed over the first crystal layer. Second heat treatment is performed so that crystal growth from the first crystal layer to a surface of the second oxide semiconductor film is caused, whereby a second crystal layer is formed. Further, oxygen doping treatment is performed on the second crystal layer.

To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

A semiconductor device having favorable electric characteristics and a manufacturing method thereof are provided. A transistor includes an oxide semiconductor layer formed over an insulating layer, a source electrode layer and a drain electrode layer which overlap with part of the oxide semiconductor layer, a gate insulating layer in contact with part of the oxide semiconductor layer, and a gate electrode layer over the gate insulating layer. In the transistor, a buffer layer having n-type conductivity is formed between the source electrode layer and the oxide semiconductor layer and between the drain electrode layer and the oxide semiconductor layer. Thus, parasitic resistance is reduced, resulting in improvement of on-state characteristics of the transistor.

A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.

A sensor substrate includes a blocking pattern disposed on a base substrate, a first electrode disposed on the base substrate and overlapping the blocking pattern, the first electrode including a plurality of first unit parts arranged in a first direction, each of the first unit parts including a plurality of lines connected to each other in a mesh-type arrangement, a color filter layer disposed on the base substrate, a plurality of contact holes defined in the color filter layer and exposing the first unit parts, and a bridge line between and connected to first unit parts adjacent to each other in the first direction, through the contact holes.

An opposed substrate (9') comprises: a substrate (1); a static electricity protective electrode (2), a bridging electrode (4) and a touch induction electrode (6) comprising a plurality of sub-units sequentially formed on the substrate (1), wherein the distribution of the static electricity protective electrode (2) on the substrate (1) corresponds to dummy regions between sub-units, and the static electricity protective electrode (2), the bridging electrode (4) and the touch induction electrode (6) are insulated from each other. The opposed substrate (9') has a good touching effect. A method for manufacturing the opposed substrate, and a liquid crystal display touch panel are also disclosed.

In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

A liquid crystal display device includes a first substrate, a first electrode on the first substrate, a second substrate opposed to the first substrate, and a second electrode on the second substrate. The second electrode corresponds to the first electrode. The liquid crystal display device also includes a liquid crystal structure between the first electrode and the second electrode. The liquid crystal structure includes a plurality of liquid crystal molecules and at least one movement control member. The movement control member in the liquid crystal structure restricts a movement of the liquid crystal molecules.

The present invention provides an optical compensated bending (OCB) mode liquid crystal display (LCD) panel and a method for manufacturing the same. The method comprises the following steps: forming alignment layers on substrate, respectively; forming a liquid crystal layer between the alignment layers to form a liquid crystal cell; applying an electrical signal across the liquid crystal cell; and irradiating light rays to or heating the liquid crystal cell, so as to form a first polymer alignment layer and a second polymer alignment layer, respectively. The present invention can reduce a phase transition time of liquid crystal molecules from a splay state to a bent state.

Disclosed herein is a liquid crystal display device including a plurality of pixels each having a reflecting section and a transmitting section, the pixels each including a plurality of sub-pixels resulting from alignment division, the liquid crystal display device including: an element layer formed on a substrate; an insulating film formed on the substrate so as to cover the element layer; a pixel electrode formed on the insulating film so as to be connected to the element layer; a gap adjusting layer formed on the insulating film on the element layer including a region of connection between the element layer and the pixel electrode; and a dielectric formed on a connecting part for making an electric connection between the sub-pixels.

A liquid crystal display device includes a liquid crystal display element including a first alignment film and a second alignment film and a liquid crystal layer that is provided between the first alignment film and the second alignment film, wherein the first alignment film includes a compound in which a polymer compound that includes a cross-linked functional group or a polymerized functional group as a side chain is cross-linked or polymerized, the second alignment film includes the same compound as the compound that configures the first alignment film, and the formation and processing of the second alignment film is different from the formation and processing of the first alignment film and when a pretilt angle of the liquid crystal molecules which is conferred by the first alignment film is θ1 and a pretilt angle of the liquid crystal molecules which is conferred by the second alignment film is θ2, θ1>θ2.

The present invention provides a display device substrate, a display device substrate manufacturing method, a display device, a liquid crystal display device, a liquid crystal display device manufacturing method and an organic electroluminescent display device that allow suppressing faults derived from occurrence of gas and/or bubbles in a pixel region. The present invention is a display device substrate that comprises: a photosensitive resin film; and a pixel electrode, in this order, from a side of an insulating substrate. The display device substrate has a gas-barrier insulating film, at a layer higher than the photosensitive resin film, for preventing advance of a gas generated from the photosensitive resin film, or has a gas-barrier insulating film, between the photosensitive resin film and the pixel electrode, for preventing advance of gas generated from the photosensitive resin film.

Embodiments of the disclosed technology relate to a color filter substrate and a method of manufacturing the same. The color filter substrate comprises a base substrate having a black matrix pattern thereon, the black matrix pattern having a plurality of openings; and a plurality of color filter layers in different colors, disposed on the base substrate and located at the openings of the black matrix pattern, the color filter layers being glass layers in different colors.

A liquid crystal display panel, including: a pixel electrode formed on a first substrate; an alignment layer formed on the pixel electrode, wherein the alignment layer includes an alignment layer material and aligns first liquid crystal molecules in a direction substantially perpendicular to the pixel electrode; and a photo hardening layer formed on the alignment layer, wherein the photo hardening layer includes a photo hardening layer material and aligns second liquid crystal molecules to be tilted with respect to the pixel electrode, wherein the alignment layer material and the photo hardening layer material have different polarities from each other.

A liquid crystal display capable of realizing a high transmittance while maintaining favorable voltage response characteristics, and a method of manufacturing the same are provided. The liquid crystal display includes: a liquid crystal layer; a first substrate and a second substrate arranged to face each other with the liquid crystal layer in between; a plurality of pixel electrodes provided on a liquid crystal layer side of the first substrate; and an opposite electrode provided on the second substrate to face the plurality of pixel electrodes. One or both of a face on the liquid crystal layer side of the pixel electrode, and a face on the liquid crystal layer side of the opposite electrode includes a concavo-convex structure.

According to one embodiment, a first gene encodes a reporter protein. The first gene is disposed at the downstream of the gene promoter. A second gene is disposed at the downstream of the gene promoter and encodes a replication origin-binding protein. An internal ribosome entry site is disposed between the first gene and the second gene. The transcription termination signal sequence encodes a signal for terminating the transcription of the first gene and the second gene. A replication origin sequence is recognized by the replication origin-binding protein.

Methods and compositions for targeted delivery of biotherapeutics are provided. The compositions comprise bile-sensitive St. thermophilus bacteria modified to release a biotherapeutic agent following bile exposure. Biotherapeutic agents released by the St. thermophilus bacteria disclosed herein include AQ and AQR rich peptides. Methods of the invention comprise administering to a subject a St. thermophilus bacterium modified to release a biotherapeutic agent following bile exposure. Administration of the St. thermophilus bacterium promotes a desired therapeutic response. The bacterium may be modified to express and release AQ or AQR rich peptides which subsequently inhibit cellular apoptosis or reduce mucosal damage. Thus, methods of the invention find use in treating or preventing a variety of gastrointestinal disorders including C. difficile infection and antibiotic-associated diarrhea.

Described herein are techniques for assembling a polynucleotide encoding a transcription activator-like effector nucleases (TALEN). The techniques ligate and digest necessary modules for a TALEN assembly in one reactor or system. Methods and Kits for generating a TALEN are also described.

Isolated polynucleotides and polypeptides and recombinant DNA constructs particularly useful for altering agronomic characteristics of plants under nitrogen limiting conditions, compositions (such as plants or seeds) comprising these recombinant DNA constructs, and methods utilizing these recombinant DNA constructs. The recombinant DNA construct comprises a polynucleotide operably linked to a promoter functional in a plant, wherein said polynucleotide encodes an LNT1 polypeptide.