turin

Method of aligning liquid crystals in a process of manufacturing liquid crystal display

A method of manufacturing a liquid crystal display includes: preparing a lower mother substrate, where lower cells, each including a thin film transistor, are provided on the lower mother substrate, and a lower alignment layer is disposed on the lower cells; preparing an upper mother substrate, where upper cells corresponding to the lower cells are provided on the upper mother substrate, and an upper alignment layer is disposed on the upper cells; providing a mother substrate assembly by providing a liquid crystal mixture layer between the lower and upper mother substrates and combining the lower and upper mother substrates; providing a pretilt of the liquid crystals by applying a voltage to a voltage application unit of the lower mother substrate; and curing an alignment supporting agents in the liquid crystal mixture layer or the lower and upper alignment layers by irradiating light to a side of the mother substrate assembly.




turin

Substrate attachment device of display device and method for manufacturing display device using the same

A substrate attachment device of a display device and a method for manufacturing the display device using the same are disclosed. The substrate attachment device of the display device includes a guide unit which is curvedly disposed, a first support unit which moves forward and backwards along the guide unit and transfers a cover substrate having a curved surface, a second support unit which is disposed on the guide unit, moves forward and backwards, and transfers a display panel, and a roller unit which rotates so that the cover substrate having the curved surface is attached to the display panel.




turin

Spark plug for internal combustion engine and method for manufacturing same

The spark plug has a configuration satisfying the relationships of B≧0.7A and 0.3 mm≦A≦0.6 mm, where B is an axial thickness along the central axis line Q of the weld portion formed between the base material electrode and the noble-metal chip, and A is an axial distance along the central axis line Q between the intersection points P3 and X. The intersection point P3 is a point at which a phantom axis line radially distant from the central axis line Q by D/2 (D being a diameter of the noble-metal chip) intersects with the boundary line between the weld portion and the noble-metal chip. The intersection point X is a point at which an extension of the contour line of the base material electrode in the vicinity of the weld portion intersects with a boundary line between the weld portion and the base material electrode.




turin

Organic light emitting display device and method of manufacturing the same

An organic light emitting display device and a method of manufacturing the same are provided. The organic light emitting display device includes: a substrate including a display portion displaying an image as a plurality of sub-pixels that are arranged, and a non-display portion extending at an edge of the display portion; and a sealant formed along a periphery of the display portion, wherein an organic film having an emissive layer is formed on the plurality of sub-pixels, and an emissive layer storage unit storing an emissive layer coated on the non-display portion is formed between the display portion and the sealant. By forming the emissive layer storage unit by removing at least a part of a pixel defining layer on an edge of the substrate, a raw material of the emissive layer coated on the non-display portion on the substrate is easily processed via the emissive layer storage unit.




turin

Spark plug electrode and spark plug manufacturing method

A method of making a spark plug electrode includes several steps. One step includes providing an inner core of a ruthenium (Ru) based alloy or an iridium (Ir) based alloy. Another step includes providing an outer skin over a portion or more of the inner core in order to produce a core and skin assembly. The outer skin can be made of platinum (Pt), gold (Au), silver (Ag), nickel (Ni), or an alloy of one of these. Yet another step includes increasing the temperature of the core and skin assembly. And another step includes hot forming the core and skin assembly at the increased temperature.




turin

Method of manufacturing display device

To provide a method of manufacturing a display device having an excellent impact resistance property with high yield, in particular, a method of manufacturing a display device having an optical film that is formed using a plastic substrate. The method of manufacturing a display device includes the steps of: laminating a metal film, an oxide film, and an optical filter on a first substrate; separating the optical filter from the first substrate; attaching the optical filter to a second substrate; forming a layer including a pixel on a third substrate; and attaching the layer including the pixel to the optical filter.




turin

Organic luminescence display device having getter pattern and method of manufacturing the same

Provided is a method of manufacturing an organic luminescence display device, the method including: bringing a getter powder into direct contact with a first surface of an encapsulation substrate; irradiating a laser to a second surface of the encapsulation substrate correspondingly to a getter pattern area to melt the second surface of the encapsulation substrate; and bonding the getter powder to the molten second surface of the encapsulation substrate to form a getter pattern corresponding to the getter pattern area. Since the getter powder is directly bonded to the encapsulation substrate by laser irradiation, a fine getter pattern may be formed.




turin

Liquid crystal display and method for manufacturing the same

A liquid crystal display is provided that includes: a first display panel including a thin film transistor and a plurality of pixel electrodes; a second display panel facing the first display panel with a cell gap therebetween; a lower resistive layer disposed on the first display panel; an upper resistive layer disposed on the second display panel; and a sensing spacer connecting the lower resistive layer and the upper resistive layer.




turin

Flat panel type image display device and method for manufacturing the same

Disclosed are a flat panel type image display device of a clear borderless design without a case defining an external appearance of an image display device, and a method for manufacturing the same. The flat panel type image display device includes an image display panel to display an image, a panel guide including a panel fixing portion, to which the image display panel is attached, and a guide frame formed in a dual coupling structure, the panel fixing portion being configured to move together with the guide frame in at least one direction of x, y, and z-axis directions, and a bottom case formed to cover an opened back surface of the panel guide comprising a back surface of the image display panel, the bottom case being fixed to an inner side surface of the panel guide.




turin

Display apparatus and method of manufacturing the same

A display device according to an exemplary embodiment of the present invention includes a substrate, a display panel disposed on the substrate, a sealing substrate which is disposed opposite to the display panel, and a sealing unit disposed between the substrate and the sealing substrate, enclosing the display panel. The sealing unit has a penetration hole which passes through the sealing unit in a vertical direction.




turin

***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***Manufacturing method for organic electroluminescent panel and organic electroluminescent panel manufactured using the same

A simple manufacturing method for an organic electroluminescent panel in which organic electroluminescent elements are arranged and sealed by a sealing adhesive. The electroluminescent panel has excellent sealing properties and excellent durability as a result of the organic electroluminescent elements being adhered to one another by a heat-curable adhesive. The manufacturing method is for an organic electroluminescent panel in which at least a first electrode, an organic functional layer containing a light-emitting layer, an organic electroluminescent element having a second electrode, and a sealing substrate are bonded together on a substrate by the heat-curable adhesive. The method includes forming a heat-curable adhesive layer on the sealing substrate, subjecting the heat-curable adhesive layer formed on the sealing substrate to pre-heating treatment, bonding the pre-heated heat-curable adhesive layer to the organic electroluminescent element, and subjecting the heat-curable adhesive layer to heat curing, in the given order.




turin

Light-emitting device, lighting device including the light-emitting device, and method of manufacturing the light-emitting device

A light-emitting device includes a light-emitting element with a pair of element electrodes as a first element electrode and a second element electrode positioned at the lower surface of the light-emitting element; a phosphor plate disposed on the upper surface of the light-emitting element; a first resin covering the lower surface and the peripheral side surface of the light-emitting element with the first element electrode and the second element electrode partly appearing from the first resin; and a second resin provided in the phosphor plate.




turin

Organic light emitting display apparatus and manufacturing method thereof

An organic light emitting display apparatus includes a pixel part including a pixel electrode, a light emitting layer and an opposite electrode, and a contact part in which the opposite electrode contacts a power line, wherein a first thickness of the opposite electrode in the pixel part is different from a second thickness of the opposite electrode in the contact part.




turin

Organic luminescent display device and method of manufacturing at organic luminescent display device

An organic EL display device of the invention includes: a first substrate; a second substrate disposed above the first substrate and having a display area and a non-display area; and a light-emitting layer disposed between the display area and the first substrate, wherein a first alignment mark having the light-emitting layer is disposed between the non-display area and the first substrate, and a second alignment mark is disposed on the second substrate at a position corresponding to the first alignment mark.




turin

Light emitting device, electronic appliance, and method for manufacturing light emitting device

To provide a light emitting device that has a structure in which a light emitting element is sandwiched by two substrates to prevent moisture from penetrating into the light emitting element, and a method for manufacturing thereof. In addition, a gap between the two substrates can be controlled precisely. In the light emitting device according to the present invention, an airtight space surrounded by a sealing material with a closed pattern is kept under reduced pressure by attaching the pair of substrates under reduced pressure. A columnar or wall-shaped structure is formed between light emitting regions inside of the sealing material, in a region overlapping with the sealing material, or in a region outside of the sealing material so that the gap between the pair of substrates can be maintained precisely.




turin

Organic light emitting diode device and manufacturing method thereof

An organic light emitting diode device can have an enhanced thin film encapsulation layer for preventing moisture from permeating from the outside. The thin film encapsulation layer can have a multilayered structure in which one or more inorganic layers and one or more organic layers are alternately laminated. A barrier can be formed outside of a portion of the substrate on which the organic light emitting diode is formed. The organic layers of the thin film encapsulation layer can be formed inside an area defined by the barrier.




turin

Manufacturing method of light emitting devices

A manufacturing method of light emitting devices, comprises a substrate-forming step of forming a planar-shaped substrate, a frame-forming step of forming a closed frame on the substrate, an element-mounting step of mounting multiple light emitting elements in an inside of the frame, a sealing step of injecting a liquid material that is to be a sealing member to the inside of the frame so as to seal the multiple light emitting elements, and a dividing step of dividing the multiple light emitting elements together with the substrate and the sealing member so as to obtain multiple light emitting devices with the sealing member exposed from a side surface thereof.




turin

Apparatus for manufacturing deposition mask assembly for flat panel display

Provided is an apparatus for manufacturing a deposition mask assembly for a flat panel display, which prevents a pattern from being distorted in a pattern mask when divided pattern masks are welded to a support fixture. An apparatus for manufacturing a deposition mask assembly for a flat panel display of the present description, which includes a frame mask forming an opening, a support fixture installed in the frame mask, and a pattern mask welded to the support fixture to have a pattern allowing a deposition material to be transmitted therethrough, includes: a welding head disposed in a side of the pattern mask; and a support member supporting the support fixture in an opposite side of the welding head with the pattern mask interposed therebetween.




turin

Manufacturing method for organic electroluminescent panel and organic electroluminescent panel manufactured using the same

A simple manufacturing method for an organic electroluminescent panel in which organic electroluminescent elements are arranged and sealed by a sealing adhesive. The electroluminescent panel has excellent sealing properties and excellent durability as a result of the organic electroluminescent elements being adhered to one another by a heat-curable adhesive. The manufacturing method is for an organic electroluminescent panel in which at least a first electrode, an organic functional layer containing a light-emitting layer, an organic electroluminescent element having a second electrode, and a sealing substrate are bonded together on a substrate by the heat-curable adhesive. The method includes forming a heat-curable adhesive layer on the sealing substrate, subjecting the heat-curable adhesive layer formed on the sealing substrate to pre-heating treatment, bonding the pre-heated heat-curable adhesive layer to the organic electroluminescent element, and subjecting the heat-curable adhesive layer to heat curing, in the given order.




turin

System and method for manufacturing carbon nanotubes

A system and method for manufacturing carbon nanotubes using chemical vapor deposition. The system has a first chamber comprising at least one cathode and at least one anode, a gas supply source, at least one activation energy source, at least one alignment energy source, a second chamber situated within said first chamber, said second chamber comprising: a target growth plate, comprising a catalyst and a substrate, a second cathode configured to support said target growth plate, a movable platform configured to support said second cathode, and a gas permeable barrier vertically opposed from said second cathode.




turin

Apparatus for manufacturing single crystal silicon ingot having reusable dual crucible for silicon melting

The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.




turin

Method of manufacturing spherical mesoporous silica containing dispersed silver nanoparticles, and spherical mesoporous silica manufactured by said method

The present invention relates to a method of preparing a spherical mesoporous silica structure containing silver nanoparticles dispersed therein by adding a silver nitrate solution to an aqueous surfactant solution and performing a sol-gel process and to spherical mesoporous silica prepared thereby. The spherical mesoporous silica is cost-effective compared to a conventional method that uses silver nanoparticles as a raw material, because the silver nitrate solution that is inexpensive compared to silver nanoparticles is used. Also, the spherical mesoporous silica can be with high productivity in large amounts, and thus is easily commercialized. Moreover, because silver nanoparticles are incorporated into the pores of the mesoporous silica, the silver nanoparticles are used stably and do not change color and odor. In addition, the spherical mesoporous silica exhibits various additional effects, including far-infrared ray emission and deodorization, attributable to silica.




turin

Vacuum heat insulating material, heat insulating box using vacuum heat insulating material, refrigerator, refrigerating/air-conditioning apparatus, water heater, equipments, and manufacturing method of vacuum heat insulating material

A highly reliable vacuum heat insulating material having excellent processability, usability and heat insulating performance and a heat insulating box using the vacuum heat insulating material are provided. A vacuum heat insulating material related to the present invention includes: a core material structured by a laminated structure of an organic fiber assembly formed by forming an organic fiber into a sheet shape and cutting an end face with a predetermined length, and having a core material opening portion formed by a through hole or a notch with cutting; a gas-barrier outer cover material containing the core material inside, having a sealing portion for sealing surrounding of the sheet-shaped organic fiber assembly and surrounding of the core material opening portion, and hermetically sealing an inside with almost vacuum status by sealing the sealing portion; and an outer cover material opening portion provided at the outer cover material under a status in which the sealing portion provided at the surrounding of the sheet-shaped organic fiber assembly and the surrounding of the core material opening portion is sealed, being a through hole or a notch which is smaller than the core material opening portion with a sealed amount, and a long fiber being equal to or longer than a length of the sheet is used for the organic fiber.




turin

Method for manufacturing a resilient rail support block assembly

A rail support block assembly includes a resilient member and a molded block having a top, a bottom and peripheral wall. The block is adapted for fastening one or more rails on the top. The prefabricated resilient member has an outer tray and inner tray arranged within the outer tray, and includes a resilient intermediate structure between the trays. The block is molded in a block mold into with the moldable material is introduced and allowed to harden. The block is fixed in the inner tray to extend under the bottom of the block and along a lower region of the peripheral wall. The resilient member may form a part of the block mold, so that a mold member combined with the resilient member delimit the mold for the block. The moldable material is introduced and adheres directly to the inner tray of the prefabricated resilient member.




turin

Data carrier card and method for manufacturing a data carrier card

A card body for a portable data carrier, in particular a chip card or magnetic strip card, and a method for manufacturing a card body. The card body includes at least a coextruded foil having at least two areas with different material properties. By using coextruded foils a card body consisting of a plurality of alternating opaque and transmissive strips as well as a card body with a window can be formed in a simple fashion.




turin

Manufacturing bevel gears

A method of manufacturing bevel gears with a tool, such as a tapered milling tool (16), wherein the tool is located at a position offset (Rw) from the center position of a conventional face milling cutter and the tool follows a path, such as a circular arc path, during machining.




turin

Casting method for manufacturing a work piece

A method for manufacturing a work piece is provided. The method includes preparing fiberglass in a mold, preparing a closed mold cavity around the fiberglass, flushing the closed mold cavity with an oxygen-free gas, injecting resin in the closed mold cavity, and curing the casted work piece. Furthermore, a work piece manufactured by the above method is provided.




turin

Methods of manufacturing wind turbine blades

An elongate web is attached to the root end of a spar of a wind turbine rotor blade to provide additional support along the width of the blade. The root end is formed by a winding operation, and a recess is then cut into the surface of the spar. The recess is defined by a relatively large first, cylindrical surface, which is coaxial with the longitudinal axis of the root end, and a relatively small second, conical surface. A tapered end of the elongate web is attached within the recess of the root end using a layer of suitable adhesive and an array of pins. Resilient spacer elements are arranged within the recess so as to surround the pins. The large area of the cylindrical surface causes the tensile and compressive stresses which arise along the elongate web in use to be transmitted to the spar as shear stresses.




turin

Method of manufacturing a wind turbine blade having predesigned segment

A blade for a rotor of a wind turbine is manufactured with a root region with a substantially circular or elliptical profile closest to the hub, an airfoil region with a lift generating profile furthest away from the hub and a transition region having a profile gradually changing the root region to the airfoil region. A first blade design is used for the first base part on a first longitudinal section of an airfoil region of a second blade, so that an induction factor of the first base part on the second blade deviates from a target induction factor. The first longitudinal section of the second blade is provided with flow altering devices so as to adjust the aerodynamic properties of the first longitudinal segment to substantially meet the target induction factor at the design point on the second blade.




turin

Wind turbine blade and method for manufacturing a wind turbine blade with vortex generators

A wind turbine for generating electrical energy may include a wind turbine blade including a plurality of vortex generators integrally formed in the outer surface of the blade. The vortex generator includes a first component that defines a portion of the outer surface of the blade and a second component defining the shape of the vortex generator and at least partially surrounded by the first component. A method of manufacturing the wind turbine blade includes disposing a first plurality of layers of structural material over a mold main body and a removable insert member with a shaped cavity. A shaped plug is then pressed into the shaped cavity, and a second plurality of layers of structural material is disposed over the plug and the mold main body to complete manufacture of a wind turbine blade with a vortex generator.




turin

Device for manufacturing a fabric, and fabric

A device for manufacturing a fabric has a plurality of automatically working apparatus arranged next to one another on at least one carrier for manufacturing a leno weave (a leno weave apparatus). Two leno threads are fed to each leno weave apparatus. The device has at least one weft thread picking device; wherein the weft thread is introduced into the shed of leno threads raised by a plurality of leno weave apparatus. The weft thread is bound using at least two leno threads at a plurality of points behind the weft thread over the width of the fabric. At least one of the leno weave apparatus arranged in the end region of the fabric carries out a higher number of interlacings for achieving a homogenized warp tension distribution over the width of the fabric; and/or the lowering of the shed is carried out by the leno weave apparatus over the width of the fabric at different times for achieving a homogenized warp tension distribution.




turin

Manufacturing method of medical textiles woven from chitosan containing high wet modulus rayon fibre

An anti-“Methicillin-Resistant Staphylococcus Aureus (MRSA)” chitosan containing antibacterial High Wet Modulus (HWM) rayon fiber textile for medical usage is made of the steps as following: chitin flakes made from natural shrimp or crab shells are deacetylated to generate chitosan with a high deacetylation degree of 90% or more. Next chitosan is dissolved in acetic acid and regenerated by caustic soda to form a chitosan antibacterial nanoparticles slurry, then added to HWM viscose rayon process, and spinning to produce a chitosan containing antibacterial HWM rayon fiber. The antibacterial amino groups of chitosan and the hydroxyl groups of rayon cellulose combine together via hydrogen bonding. Therefore, the fiber becomes the anti-MRSA antibacterial HWM rayon fiber containing amino groups (—NH3+). Finally the resulting HWM rayon fiber is conducted via a yarn spinning or/and weaving process to procure a medical textile with chitosan content.




turin

Method and device for the manufacturing of fabrics with at least two different pile heights in a same pile row

A method weaves pile fabrics with at least two different pile heights (a, b) in the same pile row, wherein the fabrics have weft threads, ground warp threads and pile-warp threads (1, 2), wherein these pile-warp threads are interlaced in the fabric, according to a pattern, in a figure-forming manner or are inwoven in a non-figure-forming manner, and which, when they are figure-forming, form pile with a well-defined pile height. The method includes a first set of pile warp threads, under light strain and at least a second set of pile warp threads under a higher strain. A device for manufacturing such fabrics is described.




turin

Safety lanyard and manufacturing method thereof

This lanyard, which is movable by elasticity between a rest position and a stretched position, comprises a tubular sheath made from non-stretchable material, and a set of elastic threads joined to the sheath. According to the invention, the elastic threads define at least one longitudinal weaving zone in which they are woven on one surface of the sheath only, each weaving zone being proper to form a bending zone of the lanyard, in the rest position, in which the elastic threads are folded onto themselves.




turin

Regulator/brush-holder assembly for a motor-vehicle alternator, manufacturing process and corresponding alternator

The regulator/brush-holder assembly (1) comprises a support (2) and an electrical circuit (5, 6) comprising a regulating element (5) connected by microwires to a trace circuit (6). The electrical circuit further includes a filtering circuit (10) separate from the regulating element and connected by microwires to the trace circuit. According to one particular embodiment, the filtering circuit comprises an insulating substrate (11) and surface-mounted components (C1, C2, S1, S2, V). A ground plane (19) and/or one or more ground pads may be provided for connection to a ground trace of the trace circuit. The filtration frequencies of the filter circuit extend from 100 kHz to 1 GHz.




turin

Heating or cooling system featuring a split buffer tank

This invention relates to a heating/cooling system operating on the basis of a novel SPLIT BUFFER TANK; representing an efficiency improvement alternative to HVAC systems functioning with existing commercial buffer tanks. Currently, commercial buffers have the heat source provider (HSP)-return and system-return discharging to a common buffer/vessel. Novel SPLIT BUFFER is provided with a SEPARATION DISK placed inside the tank as mechanical way of separating the hot water inflow from the HSP from the warmer water inflow from system return. The disk moves up and down along the tank driven by demanded water supply and return. Pump-1 circulates hot water from the hot section of the buffer to the secondary system claiming for heat. Pump-2 circulates warmer water from the warmer section of the buffer through the HSP where it is reheated, and subsequently stored in the hot section of the buffer to reinitiate this cycle again.




turin

Disassembling method of mandrel used for manufacturing composite material structure and disassembling apparatus of mandrel

The present invention provides a technique which can disassemble a mandrel having a substantially cylindrical shape and being dividable into a plurality of segments, easily and efficiently. The disassembling method comprises, in the mandrel adhesively attached with a composite material structure on an outer peripheral surface thereof, a rotation step of rotating the pair of support rings along with the mandrel to position a segment which is a detached target to an uppermost portion; and a segment detaching step of detaching the segment which is the detached target positioned at the uppermost portion, from the pair of support rings; wherein in the segment detaching step, the segment which is the detached target is moved in a vertically downward direction to a position inside of the mandrel, between the pair of support rings, and is carried out from between the pair of support rings.




turin

Manufacturing apparatus

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.




turin

Gas sensor and method of manufacturing thereof

In a gas sensor sensing a specific gas component contained in gas to be measured, oxygen ion conductive solid electrolyte is used in a sensing element for sensing the specific gas component. A terminal unit is used, which comprises a pair of insulators, each having an inner side surface, disposed to pinch and hold the base end portion of the sensing element on the pair of electrode-mounted surfaces of the sensing element. The terminal unit comprises two pairs of metal terminals and a spring member. The metal terminals electrically contact electrode pads of the sensing element, pair by pair, respectively, and are disposed on the inner side surfaces of the insulators. The spring members press the pair of insulators at one or more positions of electrode-mounted surfaces of the sensing element in a width direction so that the insulators are pressed to be opposed to each other.




turin

Device and method for manufacturing the same

The present invention provides a device that decreases deformation during manufacturing of the device, provides a firm joint without use of an adhesive, and allows chemical modification of a channel during manufacturing of the device. The device includes two joined substrates, and a concavity is formed on at least one of the opposing surfaces of the two substrates so as to make a channel, where the two substrates are joined together by a covalent bond via a crosslinking agent (A), and the crosslinking agent (A) is exposed on an inner wall surface of the channel.




turin

TFT array substrate, manufacturing method of the same and display device

According to embodiments of the invention, a TFT array substrate, a manufacturing method of the TFT array substrate and a display device are provided. The method comprises: depositing a metal film on a substrate, and forming a gate electrode and a gate line; forming a gate insulating layer and a passivation layer on the substrate; depositing a transparent conductive layer, a first source/drain metal layer and a first ohmic contact layer, and forming a drain electrode, a pixel electrode, a data line, and a first ohmic contact layer pattern provided on the drain electrode; and depositing a semiconductor layer, a second ohmic contact layer and a second source/drain metal layer, and forming a source electrode, a second ohmic contact layer pattern provided below the source electrode, and a semiconductor channel between the source electrode and the drain electrode.




turin

OLED display having organic and inorganic encapsulation layers, and manufacturing method thereof

An organic light emitting diode (OLED) display a includes: a substrate; an organic light emitting element on the substrate and including a first electrode, a light emission layer, and a second electrode; and an encapsulation layer on the substrate while covering the organic light emitting element. The encapsulation layer includes an organic layer and an inorganic layer. A mixed area, where organic materials forming the organic layer and inorganic materials forming the inorganic layer co-exist along a plane direction of the encapsulation layer, is formed at the boundary between the organic layer and the inorganic layer.




turin

Semiconductor device and method for manufacturing the same

An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.




turin

Semiconductor device, semiconductor wafer and manufacturing method of semiconductor device

A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.




turin

Semiconductor device and method for manufacturing the same

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.




turin

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.




turin

Semiconductor device and method for manufacturing the same

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.




turin

Semiconductor device and manufacturing method thereof

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.




turin

Semiconductor device and manufacturing method thereof

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.




turin

Semiconductor device and method for manufacturing the same

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.