An upright adaptor for a ladder tree stand converts that ladder tree stand into an upright tree stand. The adaptor includes a ladder stand base support which is attachable to the base of a tree and which receives the lower end of the ladder stand. A speed lock assembly is part of the upright adaptor and is attachable to an upper portion of the ladder tree stand. It includes a self-tapping screw and a double-acting ratchet wrench which is operable by a person standing on the ground once the ladder tree stand has been erected.

A linear alternator assembly is provided that includes a block defining a cylinder. The cylinder block has inlet ports at which fluid enters the cylinder, exhaust ports at which fluid is exhausted from the cylinder, and a fuel port. Energizable coils surround the cylinder. A first and a second magnetic or magnetizable piston are contained within the cylinder and are positionable within the cylinder in response to energization of selective ones of the coils and combustion of fuel within the cylinder to selectively establish a four-stroke working cycle having an intake stroke, a compression stroke, an expansion stroke, and an exhaust stroke, producing at least one of compressed gas and electrical energy. The four-stroke working cycle may be varied to adapt to changes in power demanded, thereby balancing required output power with efficiency considerations.

A lubricating configuration in a two-stroke cycle, opposed-piston engine for a piston wristpin minimizes losses in oil pressure at the wristpin as the piston approaches bottom center and reduces the required oil supply pressure to the engine. The wristpin is constructed to absorb and store oil pressure energy when oil pressure at the wristpin is high, and to release that stored energy to pressurize the oil at the wristpin when connecting rod oil pressure is low.

A carbon oxygen hydrogen motor comprises an enclosure, a combustion chamber, and a plurality of injectors. A rotational crank is positioned within the enclosure and connected with a piston. The piston is positioned within the combustion chamber and connected to the rotational crank by a rod. A stream of hydrogen gas, oxygen gas, and carbon dioxide gas enter into the combustion chamber through the plurality of injectors. A spark plug, which is connected to the combustion chamber, ignites hydrogen gas, oxygen gas, and carbon dioxide gas inside the combustion chamber causing a reaction. The reaction moves the piston upward. After the reaction has taken place, the piston moves downward. The downward motion of the piston ejects all of the byproducts from the reaction through a ejecting valve located in the combustion chamber. Since the piston is connected with the rotational crank, the rotational crank rotates in cycles creating mechanical energy.

A system for a cylinder head is provided. The system comprises a cam cover mounted on the cylinder head and including an oil separator and a coil on plug (COP) coupled to the oil separator via a snap-fit connection. The snap-fit connection holds the coil-on-plug in position and may provide a lower cost alternative to existing systems of retaining coil-on-plugs on a cam cover.

A semiconductor memory device includes first and second memory cells, each of which includes a charge storage layer, a first bit line that is connected to the first memory cell, and a second bit line that is connected to the second memory cell. A writing operation includes multiple loops of a programming operation and a verification operation, and first data is written in the first memory cell, and second data different from the first data is written in the second memory cell through the writing operation. In a first loop of the writing operation, a first voltage is applied to the first bit line and the second bit line is maintained in an electrically floating state during the programming operation, and a verification operation relating to the second data is not performed and a verification operation relating to the first data is performed.

To provide a magnetic element capable of performing skyrmion transfer, a skyrmion memory to which this magnetic element is applied, and a shift register, for example, a magnetic element capable of performing skyrmion transfer is provided, the magnetic element providing a transverse transfer arrangement in which the skyrmion is transferred substantially perpendicular to a current between an upstream electrode and a downstream electrode, and including a plurality of stable positions in which the skyrmion exists more stably than in other regions of a magnet, and a skyrmion sensor that detects a position of the skyrmion.

To provide a magnetic element which can generate a skyrmion, and a skyrmion memory which applies the magnetic element or the like. To provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having a β-Mn type crystal structure. Also, to provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having an Au4Al type crystal structure.

A magnetic element capable of generating and erasing a skyrmion, including a magnet shaped as a thin layer and including a structure surrounded by a nonmagnetic material; a current path provided surrounding an end region including an end portion of the magnet, on one surface of the magnet; and a skyrmion sensor that detects the generation and erasing of the skyrmion. With Wm being width of the magnet and hm being height of the magnet, a size of the magnet, with the skyrmion of a diameter λ being generated, is such that 2λ>Wm>λ/2 and 2λ>hm>λ/2. With W being width of the end region in a direction parallel to the end portion of the magnet and h being height of the end region in a direction perpendicular to the end portion of the magnet, the end region is such that λ≧W>λ/4 and 2λ>h>λ/2.

The semiconductor device includes a bit line, a transistor, a retention node, and a capacitor. The transistor has a function of charging or discharging the retention node. The capacitor has a function of retaining a potential of the retention node. A voltage greater than the sum of a writing voltage and a threshold voltage is applied to a gate of the transistor. When the transistor is turned on, a first potential is supplied to the bit line with a reference potential in a floating state. A voltage less than the sum of the writing voltage and the threshold voltage is applied to the gate of the transistor. When the transistor is turned on, a second potential is supplied to the bit line with a reference potential in a floating state. With use of the first and second potentials, the threshold voltage of the transistor is calculated without being influenced by parasitic capacitance and variations in the storage capacitance of the capacitor.

The invention relates to an integrated circuit (1), comprising: a field-effect transistor (2), comprising:first and second conduction electrodes (201, 202);a channel zone (203) arranged between the first and second conduction electrodes;a gate stack (220) arranged vertically in line with the channel zone, and comprising a gate electrode (222);an RRAM-type memory point (31) formed under the channel zone, or formed in the gate stack under the gate electrode.

Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3·λ>Wm≧λ, where λ denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2·λ>Hm≧λ, and the magnet has a notch structure at the edge between the upstream electrode and the downstream electrode.

Examples of the present disclosure provide apparatuses and methods for performing shift operations in a memory. An example method comprises performing a shift operation a first element stored in a first group of memory cells coupled to a first access line and a number of sense lines of a memory array and a second element stored in a second group of memory cells coupled to a second access line and the number of sense lines of the memory array. The method can include shifting the first element by a number of bit positions defined by the second element by performing a number of AND operations, OR operations, SHIFT operations, and INVERT operations performed without transferring data via an input/output (I/O) line.

A signal shifting circuit may include a bank selection signal generation unit suitable for generating a bank selection signal synchronized with a first clock in response to a bank address and an internal write signal; and a shifting device suitable for generating a shifted bank selection signal by shifting the bank selection signal by a number of times according to latency information and for advancing a phase of the shifted bank selection signal whenever shifting the bank selection signal once or more so that the shifted bank selection signal is synchronized with a second clock having a phase leading a phase of the first clock.

A semiconductor device capable of stably holding data for a long time is provided. A transistor including a back gate is used as a writing transistor of a memory element. In the case where the transistor is an n-channel transistor, a negative potential is supplied to a back gate in holding memory. The supply of the negative potential is stopped while the negative potential is held in the back gate. In the case where an increase in the potential of the back gate is detected, the negative potential is supplied to the back gate.

A semiconductor memory device may include: a plurality of memory mats; and a plurality of sense amplifier arrays arranged alternately with the memory mats, each sense amplifier array being suitable for sensing and amplifying data of memory mats adjacent thereto, wherein during a data sensing operation to a memory mat among the plurality of memory mats, in addition to a sense amplifier for the memory mat and sense amplifiers positioned immediately above and below the sense amplifier for the memory mat, at least one additional sense amplifier closest to the sense amplifier for the memory mat is also activated for providing additional amplification.

Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

An apparatus includes a first terminal configured to communicate data with an outside of the apparatus, a second terminal configured to receive a first power source potential, a third terminal configured to receive a second power source potential lower than the first power source potential, a fourth terminal configured to be coupled to a calibration resistor, an output buffer including first to third nodes coupled to the first to third terminals respectively, and a replica circuit including fourth and fifth nodes coupled to the second and third terminals respectively, and sixth node coupled to the fourth terminal.

A semiconductor memory device may include: a memory bank comprising a plurality of word lines; a smart command generation unit suitable for generating a smart refresh command, which is enabled at a random cycle, in response to an active command; and a refresh operation control unit suitable for performing a refresh operation to at least one of adjacent word lines of a target word line among the plurality of word lines in response to the smart refresh command.

According to one embodiment, a semiconductor storage apparatus includes a memory cell array and a read circuit. The memory cell array includes a memory cell which is connected to a word line. A threshold voltage of the memory cell corresponds to a data value of multiple bits. The read circuit receives designation of one bit among the multiple bits, applies a first reading voltage and a second reading voltage corresponding to the designated bit to the word line, senses ON or OFF of the memory cell for each reading voltage, and outputs a first sensed value and a second sensed value after performing the sensing for each reading voltage. The first sensed value is a sensing result in a case where the first reading voltage is applied. The second sensed value is a sensing result in a case where the second reading voltage is applied.

A memory device includes a first string and a second string. The first string includes first and second transistors and first cell transistors coupled in series between a source line and a bit line. The second string includes third and fourth transistors and second cell transistors coupled in series between the source line and the bit line. During a read, a gate of the fourth transistor is applied with a voltage to turn off the transistor, and after start of application of voltages to the first cell transistors, the gate of the fourth transistor is applied with a voltage substantially the same as a voltage applied to the source line.

According to one embodiment, a first well of the first conductivity type which is formed in a substrate. a second well of a second conductivity type which is formed in the first well. The plurality of memory cells, the plurality of first bit line select transistors, and the plurality of second bit line select transistors are formed in the second well, and the plurality of first bit line select transistors and the plurality of second bit line select transistors are arranged on a side of the sense amplifier with respect to the plurality of memory cells of the plurality of bit lines.

A strobe signal shaping method for a data storage system includes receiving a strobe signal; boosting a first clock edge portion of the strobe signal when the strobe signal is received after having been idle or paused over a predetermined time period; and returning to an operating mode in which boosting is turned off with respect to a second clock edge portion of the strobe signal.

According to one embodiment, a semiconductor storage device includes a memory cell array having memory cell capable of holding N-bit data; and a sense amplifier comprising a first latch holding information on a threshold distribution, a second latch holding write data, and a third latch holding lower information of the N-bit data, and supplying a first to a fourth voltages to the memory cell to write the data to the memory cell using the first to fourth voltages. The sense amplifier supplies the first to third voltages to the memory cell based on information in the second and the third latches, and based on a result of transfer of the information held by the first latch to the second latch, supplies the fourth voltage or the first voltage to the memory cell.

According to one embodiment, a semiconductor memory device includes: first to third pages; first to third word line; and row decoder. In data writing, data is written into the first page before data is written into the second page. The row decoder is configured to apply first to third verify voltages to the gates of the first to third memory cells in a program verify operation.

A array of electrically programmable fuse (eFuse) units includes at least one connecting switch connecting two adjacent eFuse units. Each eFuse unit includes an eFuse, a write switch for passing through a first portion of a write current, a read/write switch for passing through a second portion of the write current or a read current, and a common node. The eFuse, the write switch, the read/write switch, and the at least one connecting switch are connected to each other at the common node. By turning on and off the at least one connecting switch, the current is split among the eFuse units, so that the size of the write switch can be reduced, thus reducing the total area of the array.

Semiconductor memory devices are provided. The semiconductor memory device includes an input/output (I/O) drive controller, a data I/O unit and a data transmitter. The input/output (I/O) drive controller generates drive control signals and an input control signal for driving first and second global I/O lines in a first test mode or a second test mode. The data I/O unit drives the first global I/O line in response to an input data when a write operation is executed in the first test mode and to drive the first and second global I/O lines in response to the drive control signals when the write operation is executed in the second test mode. The data transmitter transfers the data on the first global I/O line onto first and second local I/O lines to store the data on the first global I/O line in a memory cell array portion when the write operation is executed in the first test mode. The data transmitter also transfers the data on the first and second global I/O lines onto the first and second local I/O lines to store the data on the first and second global I/O lines in the memory cell array portion when the write operation is executed in the second test mode. Related methods are also provided.

Provided is a semiconductor device capable of holding data for a long period. The semiconductor device includes first to third transistors, a capacitor, and a circuit. The third transistor includes a first gate and a second gate. A gate of the first transistor is electrically connected to a first terminal of the capacitor. A first terminal of the first transistor is electrically connected to the second gate. A second terminal of the first transistor is electrically connected to the circuit. A gate of second transistor is electrically connected to a first terminal of the second transistor. A first terminal of the second transistor is electrically connected to the second gate. A second terminal of the second transistor is electrically connected to a first terminal of the capacitor. The circuit is configured to generate a negative potential. A channel formation region of the first transistor preferably includes an oxide semiconductor.

A method for fabricating a semiconductor device and a method for operating the semiconductor device are provided. The method for fabricating a semiconductor device includes forming a first electrode layer; forming a material layer, including conductive path components, over the first electrode layer; forming a second electrode layer over the material layer; performing a forming operation, which includes initially creating, in the material layer, a conductive path that electrically connects the first electrode layer to the second electrode layer by applying one of a predetermined voltage and a predetermined current between the first and second electrode layers, the conductive path including the conductive path components; and performing a first heat-treatment process at a predetermined temperature that removes some of the conductive path components from the conductive path, wherein a resistance state of the material layer changes based on the creation or dissolution of the conductive paths.

A mechanism that allows the successful decoding of MCS information of cell edge UEs while retaining the performance for the other UEs of the cell is provided. In one aspect, a UE may determine an uplink control coding rate based on an uplink signal quality. The UE may encode uplink control data based on the uplink control coding rate. The UE may apply a pattern of unused resource element locations in uplink control resource elements based on the uplink control coding rate. The UE may transmit the uplink control resource elements with the pattern of unused resource element locations. In another aspect, an eNB may receive uplink control resource elements. The eNB may determine an uplink control coding rate based on a pattern of resource element locations in the uplink control resource elements. The eNB may decode uplink control data based on the uplink control coding rate.

The present invention relates to a wireless communication system, and a method for determining a resource for device-to-device communication by a user equipment is disclosed. A method for determining a resource for device-to-device communication according to an embodiment of the present invention may comprise the steps of: receiving, from an eNode B (eNB), configuration information related to a resource pool configured for each level; selecting the resource pool of the device-to-device communication on the basis of the configuration information; and selecting a resource for the device-to-device communication in the resource pool. Herein, the resource pool may be configured to have two or more levels.

A first wireless device may determine a bandwidth for transmitting a frame, calculate two or more Spatial Reuse (SR) parameter values for the bandwidth, set, using the SR parameter values, first and second SR fields of the frame based on the bandwidth and a channel center frequency in which the bandwidth is carried, and transmit the frame to a second wireless device on the bandwidth. The first and second SR fields may be set to a first value when the bandwidth is a 40 MHz bandwidth and the channel center frequency is in a 2.4 GHz band. The first and second SR fields may be set to the first value when the bandwidth is an 80+80 MHz bandwidth and the channel center frequency is in a 5 GHz band. The first value may be a minimum of SR parameter values for first and second bandwidths in the bandwidth.

A method and network node for adaptation of contention windows in a multicarrier wireless communication system implementing a listen-before-talk protocol are disclosed. According to one aspect, a method includes determining at least one component carrier (CC), of multiple CCs to serve as a backoff channel. The method further includes performing a listen-before-talk procedure on the at least one CC serving as a backoff channel. The listen-before-talk procedure includes sensing for each backoff channel whether a clear channel exists during a backoff period drawn from a contention window (CW). The LBT procedure also includes deferring transmitting on a CC for which the sensing does not indicate that a clear channel exists. The LBT procedure also includes transmitting on a CC for which the sensing indicates a clear channel exists. The method also includes determining a size of the CW based on at least one transmission feedback value.

The sensing method a first vehicle user equipment (UE) for collision avoidance in a wireless communication network comprises receiving a set of scheduling assignment (SA) information allocated to a set of second vehicle UEs, decoding the set of SA information, each of which includes SA information to each of the set of second vehicle UEs, performing energy sensing operation for resources to be used by each of the set of second vehicle UEs to determine additional potential SA transmission and data transmission from the set of second vehicle UEs over the resources, determining available resources for the data transmission from the first vehicle UE based on the performed energy sensing and SA sensing, skipping a channel sensing operation on at least one subframe that is used for the data transmission from the first vehicle UE, and transmitting data among resources identified as unused in next transmissions from second vehicle UEs.

Provided are a device-to-device (D2D) operation method carried out by a terminal in an RRC connection state in a wireless communication system, and a terminal using the method. The method is characterized by: determining whether a radio resource control (RRC) connection establishment process is problematic; and transmitting a D2D signal using an exception resource, when the RRC connection establishment process is determined to be problematic.

A master user equipment (UE) device may coordinate device-to-device (D2D) communications amongst a plurality of UE devices. For example, a UE device, which has been designated as a master UE device, may coordinate a D2D communication between a first UE device and a second UE device. The master UE device may be a UE device that obtains an indication that it is a master UE device that is to coordinate D2D communications amongst the plurality of UE devices. In some embodiments, the coordinating the D2D communication may be on behalf of a network and/or to facilitate wireless communication between the network and at least one of the plurality of UE devices.

It is disclosed a MPTCP capable system for reducing disconnection time for a MPTCP capable UE (702), when it is leaving a coverage area of a second radio access type, when the second RAT typically has priority over the first RAT. This disclosure further comprises a controller of the second RAT (706), a MPTCP capable network proxy node(708), as well as a MPTCP network system therefore. In addition, methods and computer program in the respective arrangement are also presented.

Provided are a device-to-device (D2D) operation method carried out by a terminal in an RRC connection state in a wireless communication system, and a terminal using the method. The method is characterized by: determining whether a communication link with a base station is problematic; and transmitting a D2D signal using an exception resource, when the communication link with the base station is determined to be problematic.

A method in a network node comprises determining (610) whether at least a first D2D capable UE is or will be performing a D2D operation, and determining whether the at least the first D2D capable UE is or will be performing cellular operation. The method comprises adapting (620) activity and/or inactivity state configurations for the at least the first D2D UE based on the determining.

A device for stretching webs of material transversely to a travel direction thereof, includes at least one rotary stretcher extending transversely to the travel direction of the web of material. The stretcher is composed of at least two round tubes which are aligned axially with each other and are supported by ball-and-socket joints on links. The links are mounted adjustably on a base frame.

An improved apparatus for correcting deflection in small diameter feed and retard rolls of an open width stabilizer so as to create a straight line nip with uniform pressure across the nip. The improved apparatus provides apparatus for adjusting deflection of the rolls to thereby maintain a desired size to a passageway between them so as to optimize compaction of a fabric web material. A wedge-like member is disposed between, and in moving relationship to, feed and retard roller bearings. The wedge-like member is asymmetrical, has feed and retard sides that engage the feed and retard roller bearings, respectively, and exerts reaction forces against each of the respective bearings. Improvement resides in the reaction forces causing the rolls the rolls to not deflect downwardly.

This invention is about a structure for supporting clothes to be decolorized and for aiding in the process of decoloration, to a method of forming the same, and to a method of using the same to decolorize clothes. It includes manufacturing a semi-finished product for supporting clothes and manufacturing the supporting structure as well as a the method of decolorizing clothes using the supporting structure to have various decolorizing textures and styles.

A spring steel slip sheet for a compactor and for extending into a compression zone defined by a feed roll and a retard roll for shrinking a fabric. The slip sheet is for the compactor, extends into the compression zone defined by the feed roll and the retard roll for shrinking the fabric, and is made of spring steel. The slip sheet is sheet-like and includes a mounting portion and a compressing portion. The compressing portion extends from the mounting portion at an interface line. The mounting portion usually is flat and the compressing portion usually is arcuate. The compressing portion curves similarly as the feed roll of the compactor does, and presses the fabric against the feed roll of the compactor as the fabric enters the compression zone of the compactor.

A device for preventing jamming of a fibrous material subject to a compressive treatment in a stuffing chamber defined by a feed roll and a retard roll. The device includes an impact blade and a stabilizing apparatus. The impact blade is rigid and interchangeable. The stabilizing apparatus stabilizes the impact blade against moving away from the feed roll to prevent the jamming of the fibrous material between the feed roll and the impact blade during the compressive treatment of the fibrous material.

A method, apparatus, program, and storage medium, for managing a network device by communicating with an information processing device and the network device via a network and managing the network device in response to a request from the information processing device. If a request for execution of a process, which needs particular authorization, upon the network device, is received from the information processing device, it is determined whether a command to invalidate a password of said network device has been received together with the process execution request. When the password of the network device is to be invalidated, a password invalidation request is transmitted to the network device. This technique makes it possible for an administrator of a network device to use it even when the administrator forgets the device password assigned to the network device without having to perform initialization which would cause all setting data to be lost.

A portable apparatus is removably and communicatively connectable to a network device to communicate authentication or authorization credentials of a user in connection with the user logging into or entering into a transaction with a network site. The apparatus includes a communications port to connect and disconnect the apparatus to and from the network device and to establish a communication link with the network device when connected thereto. A processor receives a secure message from the network security server via the port. The message has a PIN for authenticating the user to the network site, and is readable only by the apparatus. The processor either transfers, via the port, the received PIN to an application associated with the network site that is executing on the network device or causes the apparatus to display the received PIN for manual transfer to the application associated with the network site.

Disclosed are a method and an apparatus for applying a compaction pressure to a fabric during formation of a fabric preform. One end of the fabric is applied to the form having a central axis. The form with the fabric applied thereto is at least partially surrounded with a film. This film extends along a film path to the form and around at least a portion of the form. The fabric and the film are fed onto the form such that the fabric is wrapped around the form to create the fabric preform while the film is fed around the form. A vacuum is drawn to evacuate a gas from between the form and the film, thereby pressing the film onto the fabric and applying the compaction pressure to the fabric.

A spring-actuated basket form including a platform, a spacer housed within a cavity recessed below the platform surface, and a pair of reinforcement guides. The reinforcement guides form a space therebetween capable of removably receiving a reinforcement splint during basket assembly. The spacer's perimeter wall communicates with the inner wall of the cavity. A spring is coupled to the spacer to facilitate tensioned movement of the spacer within the cavity. The spring urges the spacer and its associated movable reinforcement guide toward the other guide to retain a reinforcement splint within the space. An adjustable alignment rim may be provided on the platform surface at a distance from the reinforcement guides.

A working surface 14 is provided with a plurality of splint locators 15-18 and a bottom locating area 27 suitable for arranging basket splints 11A-C, 12A-C into a predetermined number and configuration of angularly related sets 11, 12. A slot 44, 45 and a linearly aligned set of sockets 48A-C, 49A-C are formed in the working surface 14 outwardly from two of the perimeter edge portions 21, 22 of the bottom locating area 27. An alignment rim 29, 30 is provided for positioning one end of each of the basket splints in one of the angularly related sets 11, 12. A bolt 50, 51 is slidably mounted in each of the slots 44, 45 and extends upwardly through each of the alignment rims 29, 30. A wing nut 56, 57 is threadedly mounted on each of the bolts 50, 51 for releasably tightening the alignment rims 29, 30 at selected sites on the working surface 14. A ring-headed pin 58, 59 extends downwardly through each of the alignment rims 29, 30 for releasably engaging a selected one of the sockets 48A-C, 49A-C.

A form for making a stepped-bottom basket including a three-dimensional L-shaped frame vertically partitioned into two segments that are releasably fastenable to one another. The first segment includes top, front, rear and side walls that define the shape of the interior of the deep portion of the stepped bottom basket and the second segment includes top, front, rear and side walls that define the shape of the interior of the shallow portion of the stepped bottom basket. The second segment may include an integral splint guide capable of receiving inner reinforcement splints for the bottom of the shallow upper basket portion. Adjacent walls of the segments may be adapted for securely fitting and fastening the segments together.