A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor having a multigate structure, which includes two gate electrodes electrically connected to each other and a semiconductor layer including two channel regions connected in series formed between a source region and a drain region, and a high concentration impurity region is formed between the two channel regions; the channel length of the channel region adjacent to the source region is longer than the channel length of the channel region adjacent to the drain region.

A method and a semiconductor device for incorporating defect mitigation structures are provided. The semiconductor device comprises a substrate, a defect mitigation structure comprising a combination of layers of doped or undoped group IV alloys and metal or non-metal nitrides disposed over the substrate, and a device active layer disposed over the defect mitigation structure. The defect mitigation structure is fabricated by depositing one or more defect mitigation layers comprising a substrate nucleation layer disposed over the substrate, a substrate intermediate layer disposed over the substrate nucleation layer, a substrate top layer disposed over the substrate intermediate layer, a device nucleation layer disposed over the substrate top layer, a device intermediate layer disposed over the device nucleation layer, and a device top layer disposed over the device intermediate layer. The substrate intermediate layer and the device intermediate layer comprise a distribution in their compositions along a thickness coordinate.

A non-linear element (e.g., a diode) with small reverse saturation current is provided. A non-linear element includes a first electrode provided over a substrate, an oxide semiconductor film provided on and in contact with the first electrode, a second electrode provided on and in contact with the oxide semiconductor film, a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode, and a third electrode provided in contact with the gate insulating film and adjacent to a side surface of the oxide semiconductor film with the gate insulating film interposed therebetween or a third electrode provided in contact with the gate insulating film and surrounding the second electrode. The third electrode is connected to the first electrode or the second electrode.

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

Some embodiments include transistors having a channel region under a gate, having a source/drain region laterally spaced from the channel region by an active region, and having one or more dielectric features extending through the active region in a configuration which precludes any straight-line lateral conductive path from the channel region to the source/drain region. The dielectric features may be spaced-apart islands in some configurations. The dielectric features may be multi-branched interlocking structures in some configurations.

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.

By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

An embodiment of the present invention provides a TFT array substrate including: a base substrate (1) and thin film transistors. The thin film transistor includes a gate electrode (2), a semiconductor layer (5), a semiconductor protective layer, a source electrode (8) and a drain electrode (9). The semiconductor protective layer is disposed adjacent to the semiconductor layer (5) and includes a composite lamination structure, which includes a protective layer formed of an insulating material capable of preventing de-oxygen of the semiconductor layer (5) and an insulating layer formed of an insulating material to be etched more easily.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

A transistor device includes a compound semiconductor body having a first surface and a two-dimensional charge carrier gas disposed below the first surface in the compound semiconductor body. The transistor device further includes a source in contact with the two-dimensional charge carrier gas and a drain spaced apart from the source and in contact with the two-dimensional charge carrier gas. A first passivation layer is in contact with the first surface of the compound semiconductor body, and a second passivation layer is disposed on the first passivation layer. The second passivation layer has a different etch rate selectivity than the first passivation layer. A gate extends through the second passivation layer into the first passivation layer.

A deployment guiding cloth is wound from an outside in the vehicle width direction, on an outer peripheral portion of a folded side airbag. This deployment guiding cloth extends toward a vehicle front side and is interposed between the side airbag that is partially deployed and a vehicle cabin side portion (a center pillar garnish and a door trim) before the side airbag is fully deployed.

A ski system includes a ski, a heel binding provided on an upper surface of the ski, a toe binding mount provided on the upper surface of the ski forward of the heel binding, a toe binding releasably mounted to the toe binding mount, and a quick-release locking mechanism for locking the toe binding to the toe binding mount. The quick-release locking mechanism is configured for release by hand.

The present invention relates to a swim chair that allows a mobility challenged individual to be transported across the sand with exceptional ease, to lounge on the chair and enjoy the company and sights, to be pulled into the water and, if able, to slip off the chair to go for a swim, remount the chair and return to shore. The chair includes a main frame, defined by a top frame member and two side frame members; two axle support plates, at or in communication with the side frame members of the main frame, the axle support plates having a plurality of openings to receive a wheel axle and optionally a pull rod axle; a wheel assembly; a drop seat; a footrest and a backrest.

Interior panels having integrated airbag doors for motor vehicles and methods for making such interior panels are provided herein. In one example, an interior panel comprises a substrate having outer and inner surfaces and an opening extending therethrough. A multi-shot injection molded airbag chute-door assembly is mounted to the substrate and comprises a chute wall that at least partially surrounds an interior space. A door flap portion is pivotally connected to the chute wall and at least partially covers the opening. A perimeter flange extends from the chute wall and has a flange section that overlies the outer surface of the substrate. A molded-in lip feature extends from the flange section and contacts the outer surface to form a seal between the flange section and the substrate. A skin covering extends over the substrate and a foam is disposed between the skin covering and the substrate.

A toy truck is described which has a steering wheel positioned behind the truck at a distance and height permitting a child to turn the wheels of the truck while standing up. The front wheels thereof are contained within a swivel assembly that enables each of the front wheels to swivel or turn to the left or right in response to force being applied on said steering wheel by an operator.

A lightweight folding motorized chair with mechanical traction steering and braking. A folding frame supports the traction wheels and the drive system with hinged frame members configured to mechanically fold the control levers, wheels and periphery components into a substantially flat configuration for easy storage in small spaces. A mix of weight saving choices including: structural materials; mechanical traction control system; lithium ion battery; and overall lightweight design keeps the folding motorized chair at a size and weight that a person can lift into the trunk of a car.

A pre-weakened cover of an airbag module is provided including a layer having an outer show surface and an opposing inner surface. A plurality of first cuts is arranged at a first angle on the inner surface. A plurality of second cuts is arranged at a second angle on the inner surface. Each of the second cuts intersects two adjacent first cuts to form a generally V-shaped pattern.

A tool comprising a tool body having an opening defined by interior walls extending into the tool body and a casing disposed within the opening. The tool further includes a scintillator material disposed within the casing and a first compressive member disposed within the tool body at a first axial location. The first axial location extends for a fraction of a total axial length of the casing and exerts a first radially compressive force at the first axial location.

A drilling control system monitors and compares drilling and completion operation sensor values and autonomously acts in response to conditions such as a kick or surge. Sensors in various combinations may monitor return fluid flow rate, fluid inflow rate, wellhead bore pressure, temperature of returning fluid, torque, rate of penetration and string weight change. The control system has corresponding control logic to monitor, warn and act based on the sensor inputs. The actions may include the warning of support personnel, closing an annular blowout preventer, shearing drill pipe using a ram shear, pumping heavier fluid down choke and kill lines, disconnecting the riser or various other actions.

Methods and systems are described for improved drilling operations through the use of real-time drilling data to predict bit wear, lithology, pore pressure, a rotating friction coefficient, permeability, and cost in real-time and to adjust drilling parameters in real-time based on the predictions. The real-time lithology prediction is made by processing the real-time drilling data through a multilayer neural network. The real-time bit wear prediction is made by using the real-time drilling data to predict a bit efficiency factor and to detect changes in the bit efficiency factor over time. These predictions may be used to adjust drilling parameters in the drilling operation in real-time, subject to override by the operator. The methods and systems may also include determining various downhole hydraulics parameters and a rotary friction factor. Historical data may be used in combination with real-time data to provide expert system assistance and to identify safety concerns.

Described herein is a wear indicator (100) for use in a drill bit or a core head. The wear indicator (100) comprises an elongate element that forms part of the drill bit. The elongate element has a plurality of numbers (110, 120, 130, 140, 150, 160, 170, 180) formed along its length, each number (110, 120, 130, 140, 150, 160, 170, 180) being formed as a void and corresponds to a level of wear in accordance with the IADC dull grading system. As the drill becomes worn, the wear indicator (100) wears at the same rate to reveal one of the numbers (110, 120, 130, 140, 150, 160, 170, 180). The numbers range from “1” to “8” where the number “1” illustrates the least wear and the number “8” indicates the most wear. When unworn, none of the numbers are visible.

A cutting element for an earth-boring tool. The cutting element comprises a substrate base, and a volume of polycrystalline diamond material on an end of the substrate base. The volume of polycrystalline diamond material comprises a generally conical surface, an apex centered about a longitudinal axis extending through a center of the substrate base, a flat cutting surface extending from a first point at least substantially proximate the apex to a second point on the cutting element more proximate a lateral side surface of the substrate base. Another cutting element is disclosed, as are a method of manufacturing and a method of using such cutting elements.

An arrangement having a piston configured to move along an axial pathway a rotating seal configured to seal an inside environment from an outside environment, the rotating seal configured to be acted upon by a pressure exerted from the piston, a differential pressure sensor measuring a pressure difference between a first fluid from the outside environment and a second fluid on the inside environment, a motor connected to the piston, the motor configured to actuate the piston to a position along an axial pathway and an electronic feedback control system connected to the motor, the electronic feedback system configured to interface with the differential pressure sensor and maintain a pressure generated by the piston onto the rotating seal to a desired pressure.

A method for managing a drilling operation, including generating, by a first sensor and a second sensor of a bottom hole assembly (BHA), a first time based data log and a second time based data log, respectively, representing a borehole parameter along a drilling trajectory, determining, by a computer processor of the BHA and during the drilling operation, a time shift by comparing the first time based data log and the second time based data log, where offsetting the first and second time based data logs by the time shift maximizes a correlation factor of the first and second time based data logs, and determining, within a pre-determined time period from generating the first and second time based data logs, a drilling speed based on the time shift and a pre-determined distance between the first sensor and the second sensor.

Apparatus and method for automated drilling of a borehole in a subsurface formation. In one embodiment, a method includes selecting at least one control variable. A drilling performance objective having a value that is influenced by drilling of the borehole using the at least one control variable is defined. A first interval of the borehole is drilled maintaining the at least one control variable at a first value. A second interval of the borehole is drilled maintaining the at least one control variable at a second value. A third interval of the borehole is drilled maintaining the at least one control variable at a third value. The third value is selected based on a comparison of the values of the drilling performance objective while drilling the first interval and second interval to a predetermined optimal value of the drilling performance objective.

A method of monitoring a well for unwanted formation fluid influx is disclosed. Measurements of well outflow are acquired during a period in which drilling operations are performed for the well. Occurrences of stagnant flow events during the period are determined. An outflow signature is generated from the well outflow measurements for each stagnant flow event. The outflow signatures are displayed sequentially in time of occurrence. Each outflow signature is analyzed for an anomaly.

A vibrational tool and method is disclosed, which may be utilized to assist in lowering a drill string into a wellbore. In one embodiment, a reciprocating member and a symmetrical rotating member are mounted within a vibrational tool housing. The reciprocating member is urged in one embodiment by a spring assembly toward the rotating member whereby engagement surfaces on the reciprocating member and rotating member encounter each other. As the rotating member rotates, variable surfaces on the engagement surface cause the reciprocating member to reciprocate as the variable surfaces follow or cam with respect to each other during rotation. The resistance to rotation by engagement surfaces and spring assembly, and mass of the rotating member, result in vibrational forces, when drilling fluid flows through the vibration tool housing.

An adjustable bent drilling tool capable of changing in situ drilling direction to facilitate horizontal drilling. The drilling tool may be controlled from the surface and eliminates the need to bring the tool to the surface for reconfiguration. In one embodiment, the drilling tool utilizes a communications module to communicate with upstream sections of the tool. The communications module is connected to a programmable electronic control module which controls an electric motor. A hydraulic valve assembly follows the control module, which receives input signals and controls a pilot piston between two fixed points of a mid-assembly typically located adjacent to and downstream of the hydraulic valve assembly on the drill tool. A lower assembly is attached to the drill tool immediately following the mid-assembly, and provides both a safety release sub-assembly as well as a bendable sub-assembly which directs the adjustable drill tool to change drilling angle and direction.

Expandable apparatus for use in subterranean boreholes include at least one member configured to move between a retracted position and an extended position. A latching member disposed in the tubular body may selectively retain the at least one member in the retracted position. Methods of operating an expandable apparatus include securing at least one member of the expandable apparatus in a retracted position by engaging an inner wall of a tubular body with at least one latch member disposed in at least one aperture formed in a latch sleeve.

Expandable apparatus for use in subterranean boreholes include at least one member configured to move between a retracted position and an extended position. Components of the expandable apparatus may include at least one surface for removing debris proximate to the tubular body. Components of the expandable apparatus may be configured to enable the expandable apparatus to increase a diameter of a subterranean borehole by greater than twenty percent. Components of the expandable apparatus may be configured to restrict fluid flow to nozzle assemblies. The expandable apparatus may include a protect sleeve having a push sleeve disposed therein. Methods of operating an expandable apparatus may include removing debris with a surface of the expandable apparatus. Methods of operating an expandable apparatus may also include selectively flowing fluid to nozzle assemblies.

A radiation detector is disclosed that includes a scintillation crystal and a plurality of photodetectors positioned to detect low-energy scintillation photons generated within the scintillation crystal. The scintillation crystals are processed using subsurface laser engraving to generate point-like defects within the crystal to alter the path of the scintillation photons. In one embodiment, the defects define a plurality of boundaries within a monolithic crystal to delineate individual detector elements. In another embodiment, the defects define a depth-of-interaction boundary that varies longitudinally to vary the amount of light shared by neighboring portions of the crystal. In another embodiment the defects are evenly distributed to reduce the lateral spread of light from a scintillation event. Two or more of these different aspects may be combined in a single scintillation crystal. Additionally, or alternatively, similar SSLE defects may be produced in other light-guiding elements of the radiation detector.

A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.

A surface contamination monitoring system/method configured to correct the detected the radioactive net count rate (NCR) value of a whole-body surface contamination monitoring device based on monitored subject height and thickness is disclosed. The system includes a height detection means for determining the height of a monitored subject and a thickness detection means for determining the thickness of at least a portion of the monitored subject. The net count rate (NCR) is corrected based on the determined height and thickness of the monitored subject as applied to site calibration factor data and self-shielding factor data to produce a corrected net count rate (CNR). If the corrected net count rate (CNR) registers above a preset alarm threshold, the monitored subject is considered contaminated and an appropriate alarm is registered.

A method of bunch length compression method for a free electron laser (FEL) that avoids parasitic compressions by 1) applying acceleration on the falling portion of the RF waveform, 2) compressing using a positive momentum compaction (R56>0), and 3) compensating for aberration by using nonlinear magnets in the compressor beam line.

Disclosed is a scintillator panel provided with on a support a phosphor layer comprising columnar crystals and a protective layer sequentially in this order, wherein degraded areas on lateral surfaces of columnar crystals at an end of the phosphor layer and produced by a cutting treatment account for not less than 0% and not more than 40% of an area of all of the side surfaces of the columnar crystals. A production method of the scintillator panel is also disclosed.

Apparatus for performing electron radiation therapy on a breast cancer patient preferably includes an intraoperative electron radiation therapy machine, an intraoperative electron radiation therapy collimator tube connected to the intraoperative electron radiation therapy machine, and a plurality of filters made of a material having substantially the same density as human breast tissue for placement between the machine and the patient to change the energy of a monoenergetic beam after the beam has left the machine, allowing a filter to be chosen to reduce the energy traveling through the tube to a desired amount of energy to treat the patient. A method of controlling the amount of energy to reach a breast cancer patient undergoing electron radiation therapy includes selecting a filter made of a material having substantially the same density as human tissue and placing the filter between an intraoperative electron radiation therapy machine and a breast cancer patient to change the energy of a monoenergetic beam after it has left the machine, the filter being chosen to reduce the energy traveling from the machine to a desired amount of energy to treat the patient.

The invention relates to a thermal conduction element (20) for a package for transporting and/or storing radioactive materials, comprising: an internal part (30) intended to be in contact with a lateral body (14) of the package;an external part (34) intended to form a portion of an external envelope (24) of said package, holding radiological protection means (22);an intermediate part (32) arranged between the internal and external parts,the internal, external and intermediate parts being produced from copper and one of the alloys thereof. According to the invention, the external part (34) is equipped, at each of its two opposite ends, with an area (36) for connection by welding to another thermal conduction element (20), each connection area (36) being produced from steel.