A side valve having a lateral connector, comprising an outer sleeve and an inner sleeve that has an attachment section for attachment on the outer sleeve side, as well as a connector piece for connecting to a water supply. The outer sleeve and inner sleeve are connected with one another by way of a separate connection piece, onto which the connector is formed.

A valve assembly having a valve-seal on a valve member that moves between an open and a closed position within a valve support housing for controlling fluid flow, particularly for use as a shut-off valve. In many embodiments, advancing the valve member sealingly engages the valve-seal with a valve seating area of the housing to close the valve and shut-off fluid flow through the housing, while retracting the valve member moves the valve-seal away from the seating area to allow fluid flow around the valve-seal and through the valve-seating area. In many embodiments, the valve member includes a proximal handle and angled ramp that engage with a helical ramp of the housing to translate rotation of the handle into axial movement of the member between open and closed positions.

In a processing machine including a processor having a processing blade and a receiver having a reception member and in which a blade edge of the processing blade and a reception portion, of the reception member, engage with each other to process a paper sheet therebetween, the processing blade is one processing blade selected from a blade group and is attached to the processor so as to be changeable to another processing blade of the blade group, reception portions of kinds corresponding to a plurality of kinds of the processing blades of the blade group are formed on the reception member, and the processing blade attached to the processor is positioned so as to be in a position where the blade edge is engageable with the reception portion of the corresponding kind.

A method and device for the production of books, including: moving book blocks successively along a conveying section of a book production line; supplying a stack of book cases to the book production line; identifying a marking on each of the book blocks and the book cases; transmitting an identified marking on at least one book case to a machine control of the book production line; assigning a dataset stored in the machine control for a sequence of book cases to the supplied stack; determining a sequence in the machine control for book blocks positioned on the conveying section; comparing the dataset for the sequence of the book cases to the sequence of the book blocks; and removing and/or supplying at least one book block from or to the conveying section if the sequence of the book blocks deviates from the sequence of the book cases using the machine control.

A sheet handling apparatus includes a sheet folding unit configured to perform folding on a sheet; and a sheet stacking unit configured to stack the folded sheet on a sheet stacking surface having an inclined surface and a horizontal surface in order from upstream to downstream in a sheet conveying direction. A downstream end of the inclined surface is higher than an upstream end of the inclined surface with respect to a horizontal plane. The sheet handling apparatus also includes a discharging unit configured to discharge the folded sheet to the sheet stacking unit; a sheet conveying unit configured to convey the discharged sheet from the inclined surface to the horizontal surface; and a conveying force applying unit configured to apply a conveying force to the sheet in contact with an upper surface of the sheet from above the inclined surface.

The post-processing device includes: a binding unit that forms a cut in a sheet stack and cuts a part of the sheet stack into a predetermined shape to form a tongue portion in the sheet stack, the tongue portion having a part where one end part of the tongue portion is not separated from the sheet stack, and binds the sheet stack by bending the tongue portion and inserting the other end part of the tongue portion into the cut; and a sheet stack transport unit that transports the sheet stack in an orientation such that the one end part of the tongue portion in the sheet stack bound by the binding unit is on a downstream side of the other end part of the tongue portion in the sheet stack transport direction.

Imaging apparatus and methods for bindery systems. An example apparatus disclosed herein includes a platform having a plurality of openings to provide suction through a surface of the platform and a first track that moves across the surface of the platform. The first track has a plurality of apertures to fluidly couple the suction to an upper surface of the first track.

A supply device (10) for a machine for transversely cutting two strips (11 and 12) of a flexible material, in particular a strip of paper, moving continuously, to produce separate stacks of documents cut transversely according to predetermined formats. The device comprises lower and upper driving mechanisms (13, 14) associated with the two strips (11, 12) of flexible material respectively, which each include a mechanically rotated first roller (13a, 14a) and a freely rotatable second bearing roller (13b and 14b). The driving mechanism is mounted on a frame (15) supported by a movable platform (16) which is rigidly connected to a linear actuator (17) arranged to be moved transversely with respect to the direction of movement of the strips (11 and 12). Optical reading cells (11a, 11b, 12a, 12b) define the operating modes of the driving servomotors (13b and 14b) and of the linear actuator (17).

A method of producing a print product comprises: performing digital printing of each surface of the print product, sequentially and repeatedly, on a continuous paper; forming a section by cutting the printing-completed continuous paper into a paper sheet and folding the paper sheet in two; forming a section block by at least one of sections; and folding the section block in two.

A sheet processing device includes a clamp configured to clamp an edge portion of a sheet, the edge portion being on a side of an edge parallel to a direction in which the sheet has been conveyed; a first processing unit configured to perform a first process on the sheet at the side of the edge, the first processing unit being disposed at a first position; a second processing unit configured to perform a second process on the sheet at the side of the edge, the second processing unit being disposed at a second position that is different from the first position in a vertical direction; and a moving unit configured to move the clamp from the first position to the second position or vice versa so that the clamp moves on a loop passing through the first position and the second position.

A creasing device forms a crease in a to-be-folded portion of a sheet. The creasing device includes a sheet-information reading unit that reads any one of sheet information and binding information; a determining unit that determines a surface, on which the crease is to be formed, of the sheet according to the one of the sheet information and the binding information read by the sheet-information reading unit; and a creasing unit that forms the crease on the surface determined by the determining unit.

In the invention, for a first sheet, regardless of the sheet size (width), a lateral registration detector is moved in a direction towards an edge face of the sheet from a home position to detect the edge face of the sheet. With lateral deviation in the sheet position corrected, punching is performed by a puncher. For the second and subsequent sheets, the lateral registration detector is moved in advance to near the edge face of the sheet with reference to the detected position of the sheet edge of the first sheet, and the edge face is detected at a given timing. With lateral deviation in the sheet position corrected, punching is performed by the puncher.

A first discharging portion that discharges a sheet received from one of image forming apparatus and a second discharging portion discharges a sheet received from another image forming apparatus are disposed opposite each other to stack the sheets discharged in a common processing tray. A controller controls the first and second discharging portions when the sheets are continuously discharged by the first and second discharging portions, controls a timing when the sheets are discharged by the first discharging portion and the second discharging portion to the common processing tray such that a leading edge of the sheet discharged from one of the discharging portions abuts on a sheet surface in the downstream of a discharging direction below a leading edge of the sheet discharged from the other discharging portion.

The present invention relates generally to a semiconductor device and, more specifically, to optimizing the creep-age distance of the power semiconductor device and a preparation method thereof. The power semiconductor device includes a chip mounting unit with a die paddle and a plurality of leads arranged side by side located close to one side edge of the die paddle in a non-equidistant manner, a semiconductor chip attached on the die paddle, and a plastic packaging body covering the die paddle, the semiconductor chip, where the plastic packing body includes a plastic extension portion covering at least a part of a lead shoulder of a lead to obtain better electrical safety distance between the terminals of the semiconductor device, thus voltage creep-age distance of the device is increased.

A land grid array (LGA) package including a substrate having a plurality of lands formed on a first surface of the substrate, a semiconductor chip mounted on a second surface of the substrate, a connection portion connecting the semiconductor chip and the substrate, and a support layer formed on part of a surface of a first land.

An apparatus including a die including a dielectric material on a device side, an insulating layer surrounding a die area and embedding a thickness dimension of the die; and a carrier including a plurality of layers of conductive material disposed on the device side of the die, a first one of the layers of conductive materials being formed on the insulating layer and patterned into traces at least a portion of which are connected to respective contact points on the die. A method including disposing a die on a sacrificial substrate with a device side of the die opposite the sacrificial substrate; disposing a mold on the sacrificial substrate around; introducing an insulating material into a chase of the mold; removing the mold; forming a carrier on the insulating material adjacent a device side of a die; and separating the die and the carrier from the sacrificial substrate.

Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) devices are provided, as are MEMS devices. In one embodiment, the MEMS device fabrication method includes forming at least one via opening extending into a substrate wafer, depositing a body of electrically-conductive material over the substrate wafer and into the via opening to produce a via, bonding the substrate wafer to a transducer wafer having an electrically-conductive transducer layer, and forming an electrical connection between the via and the electrically-conductive transducer layer. The substrate wafer is thinned to reveal the via through a bottom surface of the substrate wafer, and a backside conductor is produced over a bottom surface of the substrate wafer electrically coupled to the via.

A method for producing a solder joint between at least one base part (2) and at least one first component (3) includes the following steps: providing the base part (2); partially blasting a surface of the base part (2) using a SACO blasting agent, the blasting material (50) of which has a silicate coating (52), in such a way that a SACO-blasted region (20) and a non-blasted positioning region (40) are present; and soldering the at least first component (3) onto the non-blasted positioning region (40), wherein the SACO-blasted region (20) acts as a solder resist.

Described herein are methods and systems for providing corrective maintenance using global knowledge sharing. A method to provide corrective maintenance with a CM system includes performing a query to generate a ranking of fixable causes based on factors (e.g., symptoms, configuration, test). The ranking may be determined based on a fixable cause percent match with the factors. The ranking of fixable causes may be associated with one or more solutions for each fixable cause. The ranking can be updated based on performing tests or solutions.

Methods, systems, and structures for detecting residual material on semiconductor wafers are provided. A method includes scanning a test structure including topographic features on a surface of a semiconductor wafer. The method further includes determining, based on the scanning, that the test structure includes an amount of a residual material of a sacrificial layer that exceeds a predetermined threshold.

A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).

In manufacturing an LSI, or semiconductor integrated circuit device, the step of assembling device (such as resin sealing step) is normally followed by a voltage-application test in an environment of high temperature (e.g., from 85 to 130° C.) and high humidity (e.g., about 80% RH). It has been found that separation of a titanium nitride anti-reflection film from an upper film and generation of cracks in the titanium nitride film at an upper surface edge part of the aluminum-based bonding pad applied with a positive voltage in the test is caused by an electrochemical reaction due to moisture incoming through the sealing resin and the like to generate oxidation and bulging of the titanium nitride film. These problems are addressed by removing the titanium nitride film over the pad in a ring or slit shape at peripheral area of the aluminum-based bonding pad.

A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

A method for manufacturing a light-emitting device includes a step of forming an etching resistant protection layer on a substrate provided with an organic planarizing layer, a step of forming a plurality of electrodes on the etching resistant protection layer, a step of forming an organic compound layer on the substrate provided with the plurality of electrodes, a step of forming a resist layer on the organic compound layer formed on parts of electrodes among the plurality of electrodes using a photolithographic method, and a step of removing the organic compound layer in a region not covered with the resist layer by dry etching, wherein an entire surface of the organic planarizing layer on the substrate on which steps up to the step of forming the plurality of electrodes have been performed is covered with at least one of the etching resistant protection layer and the electrode.

A first impurity region is formed by ion implantation through a first opening formed in a mask layer. By depositing a spacer layer on an etching stop layer on which the mask layer has been provided, a mask portion having the mask layer and the spacer layer is formed. By anisotropically etching the spacer layer, a second opening surrounded by a second sidewall is formed in the mask portion. A second impurity region is formed by ion implantation through the second opening. An angle of the second sidewall with respect to a surface is 90°±10° across a height as great as a second depth. Thus, accuracy in extension of an impurity region can be enhanced.

A semiconductor device has a semiconductor wafer with a plurality of contact pads. A first insulating layer is formed over the semiconductor wafer and contact pads. A portion of the first insulating layer is removed, exposing a first portion of the contact pads, while leaving a second portion of the contact pads covered. An under bump metallization layer and a plurality of bumps is formed over the contact pads and the first insulating layer. A second insulating layer is formed over the first insulating layer, a sidewall of the under bump metallization layer, sidewall of the bumps, and upper surface of the bumps. A portion of the second insulating layer covering the upper surface of the bumps is removed, but the second insulating layer is maintained over the sidewall of the bumps and the sidewall of the under bump metallization layer.

Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of a stacked microelectronic package. In one embodiment, the method includes arranging microelectronic device panels in a panel stack. Each microelectronic device panel includes a plurality of microelectronic devices and a plurality of package edge conductors extending therefrom. Trenches are formed in the panel stack exposing the plurality of package edge conductors. An electrically-conductive material is deposited into the trenches and contacts the plurality of package edge conductors exposed therethrough. The panel stack is then separated into partially-completed stacked microelectronic packages. For at least one of the partially-completed stacked microelectronic packages, selected portions of the electrically-conductive material are removed to define a plurality of patterned sidewall conductors interconnecting the microelectronic devices included within the stacked microelectronic package.

It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

A III-N device is described with a III-N material layer, an insulator layer on a surface of the III-N material layer, an etch stop layer on an opposite side of the insulator layer from the III-N material layer, and an electrode defining layer on an opposite side of the etch stop layer from the insulator layer. A recess is formed in the electrode defining layer. An electrode is formed in the recess. The insulator can have a precisely controlled thickness, particularly between the electrode and III-N material layer.

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Embodiments generally relate to optoelectronic devices and more specifically, to textured layers in optoelectronic devices. In one embodiment, a method for providing a textured layer in an optoelectronic device includes depositing a first layer of a first material and depositing an island layer of a second material on the first layer. Depositing the island layer includes forming one or more islands of the second material to provide at least one textured surface of the island layer, where the textured surface is operative to cause scattering of light.

Disclosed is a semiconductor device including an oxide semiconductor film. A first oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 15 nm is formed over a gate insulating layer. First heat treatment is performed so that crystal growth from a surface of the first oxide semiconductor film to the inside thereof is caused, whereby a first crystal layer is formed. A second oxide semiconductor film with a thickness greater than that of the first oxide semiconductor film is formed over the first crystal layer. Second heat treatment is performed so that crystal growth from the first crystal layer to a surface of the second oxide semiconductor film is caused, whereby a second crystal layer is formed. Further, oxygen doping treatment is performed on the second crystal layer.

To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

A method for producing a Ga-containing group III nitride semiconductor having reduced threading dislocation is disclosed. A buffer layer in a polycrystal, amorphous or polycrystal/amorphous mixed state, comprising AlGaN is formed on a substrate. The substrate having the buffer layer formed thereon is heat-treated at a temperature higher than a temperature at which a single crystal of a Ga-containing group III nitride semiconductor grows on the buffer layer and at a temperature that the Ga-containing group III nitride semiconductor does not grow, to reduce crystal nucleus density of the buffer layer as compared with the density before the heat treatment. After the heat treatment, the temperature of the substrate is decreased to a temperature that the Ga-containing group III nitride semiconductor grows, the temperature is maintained, and the Ga-containing group III nitride semiconductor is grown on the buffer layer.

A semiconductor device has a protective layer formed over an active surface of a semiconductor wafer. The semiconductor die with pre-applied protective layer are moved from the semiconductor wafer and mounted on a carrier. The semiconductor die and contact pads on the carrier are encapsulated. The carrier is removed. A first insulating layer is formed over the pre-applied protective layer and contact pads. Vias are formed in the first insulating layer and pre-applied protective layer to expose interconnect sites on the semiconductor die. An interconnect structure is formed over the first insulating layer in electrical contact with the interconnect sites on the semiconductor die and contact pads. The interconnect structure has a redistribution layer formed on the first insulating layer, a second insulating layer formed on the redistribution layer, and an under bump metallization layer formed over the second dielectric in electrical contact with the redistribution layer.

A semiconductor device having favorable electric characteristics and a manufacturing method thereof are provided. A transistor includes an oxide semiconductor layer formed over an insulating layer, a source electrode layer and a drain electrode layer which overlap with part of the oxide semiconductor layer, a gate insulating layer in contact with part of the oxide semiconductor layer, and a gate electrode layer over the gate insulating layer. In the transistor, a buffer layer having n-type conductivity is formed between the source electrode layer and the oxide semiconductor layer and between the drain electrode layer and the oxide semiconductor layer. Thus, parasitic resistance is reduced, resulting in improvement of on-state characteristics of the transistor.

When forming sophisticated semiconductor-based gate electrode structures of transistors, the pre-doping of one type of gate electrode structure may be accomplished after the actual patterning of the electrode material by using an appropriate mask or fill material for covering the active regions and using a lithography mask. In this manner, a high degree of flexibility is provided with respect to selecting an appropriate patterning regime, while at the same time a uniform and superior cross-sectional shape for any type of gate electrode structure is obtained.

A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.

A method for forming an amorphous semiconductor which contains an impurity element and has low resistivity and a method for manufacturing a semiconductor device with excellent electrical characteristics with high yield are provided. In the method for forming an amorphous semiconductor containing an impurity element, which utilizes a plasma CVD method, pulse-modulated discharge inception voltage is applied to electrodes under the pressure and electrode distance with which the minimum discharge inception voltage according to Paschen's Law can be obtained, whereby the amorphous semiconductor which contains an impurity element and has low resistivity is formed.

A protective film to a polarizer including a cellulose acylate and satisfying the following requirement (1) or (2): (1): The surface of the film has a pH of from 3.0 to 4.5.(2): The surface of the film has a pH of more than 4.5 and at most 6.0, and the film has a moisture permeability of at least 2800 g/m2·day.

A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition functions as a hygroscopic film at a portion extremely close to the light-emitting element, so that moisture or water vapor remaining in the light-emitting device or entering from the outside can be effectively adsorbed. Thus, reduction in performance of the light-emitting device due to moisture or water vapor can be effectively suppressed.

In a semiconductor device, where, with respect to a parasitic resistor in a current mirror circuit, a compensation resistor for compensating the parasitic resistor is provided in the current mirror circuit, the current mirror circuit includes at least two thin film transistors. The thin film transistors each have an island-shaped semiconductor film having a channel formation region and source or drain regions, a gate insulating film, a gate electrode, and source or drain electrodes, and the compensation resistor compensates the parasitic resistor of any one of the gate electrode, the source electrode, and the drain electrode. In addition, each compensation resistor has a conductive layer containing the same material as the gate electrode, the source or drain electrodes, or the source or drain regions.

The purpose of the present invention is to provide a projection image display device in which all of the multiple light sources to be used are positioned optimally, regardless of the mode of installation of the device. This projection image display device has two illumination optical systems (1, 2) that are each provided with a light source (111, 211), a color separator for separating into three colors of light, a liquid crystal panel (150, 250) for forming an optical image, and a color synthesis prism (160, 260) for color-synthesizing. A polarization beam splitter (3) for synthesis synthesizes an optical image formed by the illumination optical system (1, 2), and projects the same from a projection lens (4). The optical axis (101, 201) of each light source (111, 211) is positioned within the same plane as the optical axis (401) of the projection lens (4), and so as to orthogonally intersect the optical axis (401) of the projection lens.

A display device includes a display panel including a plurality of pixels arranged in a matrix form, each pixel including a plurality of sub-pixels, a lens module on the display panel, the lens module including a plurality of lenses having a pitch that corresponds to a horizontal pitch of the plurality of sub-pixels, and a driving unit configured to drive the display panel and the lens module to provide an image displayed by the display panel to a left eye of a viewer at a first frame and to provide the image displayed by the display panel to a right eye of the viewer at a second frame.

Provided is a switching liquid crystal panel and a display device that have novel structures that are capable of preventing luminous regions from appearing in the light transmitting parts, in the vicinities of boundaries thereof with the light shielding parts. The switching liquid crystal panel includes a pair of substrates (26a, 26b) having a twisted nematic type liquid crystal layer (24) interposed therebetween, and a plurality of light shield forming electrodes (30) that are formed on at least one of the pair of the substrates (26a, 26b) and that form light shielding parts (40) of a parallax barrier (16) in cooperation with a counter electrode (34) when a voltage is applied, the counter electrode (34) being is opposed to the light shield forming electrodes (30) with the liquid crystal layer (24) interposed therebetween. A rubbing direction for an alignment film (36a) provided on the substrate (26a) side on which the light shield forming electrodes (30) are formed is at an angle of 45° or less to a lengthwise direction of the light shield forming electrodes (30).

In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

Provided is a back plate component having reflective sheet reinforcing structure. The back plate component includes: a frame, a reflective sheet and a plurality of supporting film sheets. The frame includes a plurality of lateral beams and vertical beams, and at least one hollow part is included between the lateral beams and the vertical beams. The reflective sheet is attached to the frame, and includes a reflective surface and a back surface corresponding to the reflective surface. A portion of the back surface covers the whole hollow part. The plurality of supporting film sheets is attached to the back surface at a region corresponding to the hollow part, and includes a material the same as that of the reflective sheet. A liquid crystal display device is further disclosed herein.

A ruggedized display device is disclosed. The ruggedized display device may include an optical stack configured to resist a load up to a load threshold. The optical stack may include an electronic display including a top surface and a bottom surface, and a top protective component coupled to the top surface of the electronic display via a bonding material layer, to shield the electronic display. The top protective component and the bonding material layer may collectively have a first thickness of less than 1.0 millimeters. The optical stack may further include a bottom protective component, coupled to the bottom surface via a resiliently deformable adhesive layer, to support the electronic display from below. The bottom protective component and the adhesive layer may collectively have a second thickness less than 10.0 millimeters.

A liquid crystal display (LCD) device and a backlight module. The backlight module includes a lightbar, a lightbar heat sink, and a light guide panel (LGP). A light coupling distance is set between the lightbar and the LGP. The backlight module further includes a control structure controlling the light coupling distance. The lightbar is configured with a through hole, the control structure penetrating through the through hole is arranged on the lightbar heat sink, and the lightbar heat sink provides a fixing force that controls a position the LGP.

A liquid crystal display device includes a first substrate, a first electrode on the first substrate, a second substrate opposed to the first substrate, and a second electrode on the second substrate. The second electrode corresponds to the first electrode. The liquid crystal display device also includes a liquid crystal structure between the first electrode and the second electrode. The liquid crystal structure includes a plurality of liquid crystal molecules and at least one movement control member. The movement control member in the liquid crystal structure restricts a movement of the liquid crystal molecules.