A device for manufacturing a fabric has a plurality of automatically working apparatus arranged next to one another on at least one carrier for manufacturing a leno weave (a leno weave apparatus). Two leno threads are fed to each leno weave apparatus. The device has at least one weft thread picking device; wherein the weft thread is introduced into the shed of leno threads raised by a plurality of leno weave apparatus. The weft thread is bound using at least two leno threads at a plurality of points behind the weft thread over the width of the fabric. At least one of the leno weave apparatus arranged in the end region of the fabric carries out a higher number of interlacings for achieving a homogenized warp tension distribution over the width of the fabric; and/or the lowering of the shed is carried out by the leno weave apparatus over the width of the fabric at different times for achieving a homogenized warp tension distribution.

An anti-“Methicillin-Resistant Staphylococcus Aureus (MRSA)” chitosan containing antibacterial High Wet Modulus (HWM) rayon fiber textile for medical usage is made of the steps as following: chitin flakes made from natural shrimp or crab shells are deacetylated to generate chitosan with a high deacetylation degree of 90% or more. Next chitosan is dissolved in acetic acid and regenerated by caustic soda to form a chitosan antibacterial nanoparticles slurry, then added to HWM viscose rayon process, and spinning to produce a chitosan containing antibacterial HWM rayon fiber. The antibacterial amino groups of chitosan and the hydroxyl groups of rayon cellulose combine together via hydrogen bonding. Therefore, the fiber becomes the anti-MRSA antibacterial HWM rayon fiber containing amino groups (—NH3+). Finally the resulting HWM rayon fiber is conducted via a yarn spinning or/and weaving process to procure a medical textile with chitosan content.

A method weaves pile fabrics with at least two different pile heights (a, b) in the same pile row, wherein the fabrics have weft threads, ground warp threads and pile-warp threads (1, 2), wherein these pile-warp threads are interlaced in the fabric, according to a pattern, in a figure-forming manner or are inwoven in a non-figure-forming manner, and which, when they are figure-forming, form pile with a well-defined pile height. The method includes a first set of pile warp threads, under light strain and at least a second set of pile warp threads under a higher strain. A device for manufacturing such fabrics is described.

This lanyard, which is movable by elasticity between a rest position and a stretched position, comprises a tubular sheath made from non-stretchable material, and a set of elastic threads joined to the sheath. According to the invention, the elastic threads define at least one longitudinal weaving zone in which they are woven on one surface of the sheath only, each weaving zone being proper to form a bending zone of the lanyard, in the rest position, in which the elastic threads are folded onto themselves.

An electrical machine includes a stator having a main armature winding, an exciter field winding, and a transformer primary winding. A rotor is operatively connected to rotate relative to the stator, wherein the rotor includes an exciter armature winding operatively connected to the exciter armature winding for field excitation therebetween, a main field winding operatively connected to the main armature winding for field excitation therebetween, and a transformer secondary winding operatively connected to the transformer primary winding to form a rotating transformer. A generator control unit is operatively connected to the main armature winding, exciter field winding, and transformer primary winding to control the main armature and exciter field windings based on excitation in the primary winding received from the transformer secondary winding.

The regulator/brush-holder assembly (1) comprises a support (2) and an electrical circuit (5, 6) comprising a regulating element (5) connected by microwires to a trace circuit (6). The electrical circuit further includes a filtering circuit (10) separate from the regulating element and connected by microwires to the trace circuit. According to one particular embodiment, the filtering circuit comprises an insulating substrate (11) and surface-mounted components (C1, C2, S1, S2, V). A ground plane (19) and/or one or more ground pads may be provided for connection to a ground trace of the trace circuit. The filtration frequencies of the filter circuit extend from 100 kHz to 1 GHz.

This invention relates to a heating/cooling system operating on the basis of a novel SPLIT BUFFER TANK; representing an efficiency improvement alternative to HVAC systems functioning with existing commercial buffer tanks. Currently, commercial buffers have the heat source provider (HSP)-return and system-return discharging to a common buffer/vessel. Novel SPLIT BUFFER is provided with a SEPARATION DISK placed inside the tank as mechanical way of separating the hot water inflow from the HSP from the warmer water inflow from system return. The disk moves up and down along the tank driven by demanded water supply and return. Pump-1 circulates hot water from the hot section of the buffer to the secondary system claiming for heat. Pump-2 circulates warmer water from the warmer section of the buffer through the HSP where it is reheated, and subsequently stored in the hot section of the buffer to reinitiate this cycle again.

The present invention provides a technique which can disassemble a mandrel having a substantially cylindrical shape and being dividable into a plurality of segments, easily and efficiently. The disassembling method comprises, in the mandrel adhesively attached with a composite material structure on an outer peripheral surface thereof, a rotation step of rotating the pair of support rings along with the mandrel to position a segment which is a detached target to an uppermost portion; and a segment detaching step of detaching the segment which is the detached target positioned at the uppermost portion, from the pair of support rings; wherein in the segment detaching step, the segment which is the detached target is moved in a vertically downward direction to a position inside of the mandrel, between the pair of support rings, and is carried out from between the pair of support rings.

A seed metering assembly for a farm implement has a meter roller that can be accessed and removed in a relatively quick manner. The seed metering assembly includes a fluted meter roller that is segmented into a number of discrete fluted sections. Each fluted section has an associated flow control member that is selectively operable to impede the flow of granular material from a seed hopper to its corresponding section of the fluted meter roller.

A sensor cartridge for supplying a sensor is used. The sensor cartridge includes a casing within which the plurality of sensors can be arranged, and that allows a sample to be introduced to a sensor located at a preset location, and a connection structure. The connection structure electrically connects an external device and a sensor electrode of the sensor located at the preset location. The casing is formed so as to be held by the external device when the external device and the sensor electrode of the sensor are electrically connected via the connection structure.

Methods and systems for measuring the oxidation-reduction potential of a fluid sample are provided. The system includes a test strip with a sample chamber adapted to receive a fluid sample. The sample chamber can be associated with a filter membrane. The test strip also includes a reference cell. The oxidation-reduction potential of a fluid sample placed in the sample chamber can be read by a readout device interconnected to a test lead that is in electrical contact with the sample chamber, and a reference lead that is in electrical contact with the reference cell. Electrical contact between a fluid sample placed in the sample chamber and the reference cell can be established by a bridge. The oxidation-reduction potential may be read as an electrical potential between the test lead and the reference lead of the test strip.

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

The present liquid sample measuring device comprises a device body on which a biosensor is detachably mounted, a liquid biological sample being dispensed in drops on the biosensor; a measuring section that measures bioinformation from the liquid biological sample; a motion measuring section that measures motion information of the device body; a motion assessment section that assesses the degree of motion of the device body on the basis of the motion information of the device body measured by the motion measuring section; and a measurement controller that adjusts the measurement time for measuring the bioinformation on the basis of the assessment result of the motion assessment section.

In a gas sensor sensing a specific gas component contained in gas to be measured, oxygen ion conductive solid electrolyte is used in a sensing element for sensing the specific gas component. A terminal unit is used, which comprises a pair of insulators, each having an inner side surface, disposed to pinch and hold the base end portion of the sensing element on the pair of electrode-mounted surfaces of the sensing element. The terminal unit comprises two pairs of metal terminals and a spring member. The metal terminals electrically contact electrode pads of the sensing element, pair by pair, respectively, and are disposed on the inner side surfaces of the insulators. The spring members press the pair of insulators at one or more positions of electrode-mounted surfaces of the sensing element in a width direction so that the insulators are pressed to be opposed to each other.

The present invention provides a device that decreases deformation during manufacturing of the device, provides a firm joint without use of an adhesive, and allows chemical modification of a channel during manufacturing of the device. The device includes two joined substrates, and a concavity is formed on at least one of the opposing surfaces of the two substrates so as to make a channel, where the two substrates are joined together by a covalent bond via a crosslinking agent (A), and the crosslinking agent (A) is exposed on an inner wall surface of the channel.

A biological sample measuring device including a mounting portion to which a biological sample measuring sensor is mounted, a voltage application section that applies voltage to a counter electrode of the biological sample measuring sensor mounted to the mounting portion, amplifiers that are selectively connected to a working electrode of the biological sample measuring sensor, and a determination section that is connected to these amplifiers. The determination section has a threshold determination section that determines a voltage value obtained by voltage conversion of the current value of the working electrode, a same determination section that selectively connects the amplifiers to the working electrode depending on the determination of the threshold determination section, and identifies the sample deposited on the biological sample measuring sensor from the output of the selected amplifier, and an output section that outputs a measurement value corresponding to the identified sample.

According to embodiments of the invention, a TFT array substrate, a manufacturing method of the TFT array substrate and a display device are provided. The method comprises: depositing a metal film on a substrate, and forming a gate electrode and a gate line; forming a gate insulating layer and a passivation layer on the substrate; depositing a transparent conductive layer, a first source/drain metal layer and a first ohmic contact layer, and forming a drain electrode, a pixel electrode, a data line, and a first ohmic contact layer pattern provided on the drain electrode; and depositing a semiconductor layer, a second ohmic contact layer and a second source/drain metal layer, and forming a source electrode, a second ohmic contact layer pattern provided below the source electrode, and a semiconductor channel between the source electrode and the drain electrode.

An organic light emitting diode (OLED) display a includes: a substrate; an organic light emitting element on the substrate and including a first electrode, a light emission layer, and a second electrode; and an encapsulation layer on the substrate while covering the organic light emitting element. The encapsulation layer includes an organic layer and an inorganic layer. A mixed area, where organic materials forming the organic layer and inorganic materials forming the inorganic layer co-exist along a plane direction of the encapsulation layer, is formed at the boundary between the organic layer and the inorganic layer.

An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.

A semiconductor device includes wiring layers formed over a semiconductor wafer, a via-layer between the wiring layers, conductive films in the wiring layers, and a via-plug in the via-layer connecting the conductive films of the wiring layers above and below, a scribe region at an outer periphery of a chip region along an edge of the semiconductor substrate and including a pad region in the vicinity of the edge, the pad region overlapping the conductive films of the plurality of wiring layers in the plan view, the plurality of wiring layers including first second wiring layers, the conductive film of the first wiring layer includes a first conductive pattern formed over an entire surface of said pad region in a plan view, and the conductive film of the second wiring layer includes a second conductive pattern formed in a part of the pad region in a plan view.

An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view.

It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

A semiconductor film having an impurity region to which at least an n-type or p-type impurity is added and a wiring are provided. The wiring includes a diffusion prevention film containing a conductive metal oxide, and a low resistance conductive film over the diffusion prevention film. In a contact portion between the wiring and the semiconductor film, the diffusion prevention film and the impurity region are in contact with each other. The diffusion prevention film is framed in such a manner that a conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas to form an oxide of a metal material contained in the conductive film, the conductive film in which the oxide of the metal material is formed is exposed to an atmosphere containing water to be fluidized, and the fluidized conductive film is solidified.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.

An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

This invention provides a structure for gunpowder charge for charging gunpowders of different rates in combined fracturing perforation devices. The structure for gunpowder charge is convenient to mount and transport. In one embodiment, said structure for gunpowder charge comprises an inner gunpowder box located between adjacent perforating charges in the charge frame of a perforation device, and an outer gunpowder box attached to the outer wall of the charge frame, wherein said outer gunpowder box comprises one or two box units (2 or 4) with at least one claw at the inner side of said box unit, said claw can be locked into a groove or installation hole of the charge frame, and wherein said inner gunpowder box and said outer gunpowder box are charged with gunpowders of different burning rates.

The present invention provides a blanking apparatus comprising a plurality of blankers configured to respectively blank a plurality of beams with respect to a target position on an object, and a driving device configured to drive the plurality of blankers, wherein the driving device includes a change device configured to change relation between a combination of beams of the plurality of beams, and a target dose.

A camera array, an imaging device and/or a method for capturing image that employ a plurality of imagers fabricated on a substrate is provided. Each imager includes a plurality of pixels. The plurality of imagers include a first imager having a first imaging characteristics and a second imager having a second imaging characteristics. The images generated by the plurality of imagers are processed to obtain an enhanced image compared to images captured by the imagers. Each imager may be associated with an optical element fabricated using a wafer level optics (WLO) technology.

According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face.

A pulverized coal thermal power generation system that significantly reduces the amount of NOx emissions from a boiler and does not require a denitration unit is provided. When a denitration unit is not used, performance to remove mercury from a boiler waste gas is reduced. A waste gas purification system for a pulverized coal boiler, that compensates for this is provided. A pulverized coal boiler having a furnace for burning pulverized coal, burners for supplying pulverized coal and air used for combustion into the furnace so as to burn the pulverized coal in an insufficient air state and after-air ports provided on the downstream side of the burners for supplying air used for perfect combustion characterized in that, an air ratio in the furnace is 1.05 to 1.14, and the residence time of a combustion gas from the burner disposed on the uppermost stage to a main after-air port is 1.1 to 3.3 seconds. Preferably, water is mixed in advance with the air supplied from the after-air port so as to increase the specific heat. Furthermore, pulverized coal carrying air in the burner and a part of air used for combustion are mixed together in advance before they are jetted into the furnace.A waste gas purification system having a pulverized coal boiler, an air heater disposed downstream of the pulverized coal boiler for exchanging heat with a boiler waste gas to heat air used for combustion in the pulverized coal boiler, a dust removing unit, and a desulfurizing unit characterized in that, at least one of a halogen gas supply unit, a catalyst unit for oxidizing a mercury gas, and a mercury adsorbent blowing device is provided so as to oxidize mercury included in the waste gas.

Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

This disclosure relates to electroconductive paste formulations useful in solar panel technology. In one aspect, the disclosure relates to an inorganic reaction system for use in electroconductive paste compositions, wherein the inorganic reaction system comprises a lead containing matrix composition and a tellurium containing matrix composition. In another aspect, the disclosure relates to an electroconductive paste composition comprising a conductive metal component, an inorganic reaction system and an organic vehicle. Another aspect of the disclosure relates to a solar cell produced by applying an electroconductive paste composition of the invention to a silicon wafer. Yet another aspect relates to a solar cell module assembled using solar cells produced by applying an electroconductive paste composition to a silicon wafer, wherein the electroconductive paste composition comprises an conductive metal component, an inorganic reaction system and an organic vehicle.

Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

A back electrode type solar cell in which a no-electrode-formed region where no electrode is placed is provided in a part of a peripheral portion of a back surface of the back electrode type solar cell such that a line connecting end portions of a plurality of electrodes to one another includes a partially inwardly recessed region and the no-electrode-formed region is located adjacent to each of an electrode for n-type and an electrode for p-type adjacent to each other, a solar cell module, a method of manufacturing a back electrode type solar cell with interconnection sheet, and a method of manufacturing a solar cell module are provided.

A photovoltaic cell comprises a top subcell having a first band gap; a middle subcell comprising a substrate and having a second band gap, wherein the substrate comprises a first side and a second side opposite to the first side; and a bottom subcell having a third band gap, wherein the top subcell is grown on the first side of the substrate and the bottom subcell is grown on the second side of the substrate, wherein the first band gap is larger than the second band gap and the second band gap is larger than the third band gap.

A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

A multi-junction solar cell having a Ge or GaAs substrate, as well as a solar cell structure having several subcells deposited on the substrate, the substrate having peripheral side faces, and the solar cell structure having a peripheral circumferential surface, which runs spaced apart from the side faces. To prevent oxidation and penetration of moisture, the circumferential surface of the solar cell structure is coated with a protective, electrically insulating first coating under essential exclusion of the upper surface facing the rays, or that without encroaching on the solar cell structure, the side faces of the substrate are coated with a protective, electrically insulating second coating or that both the side faces of the substrate as well as the circumferential surface of the solar cell structure are coated with a third coating by essential exclusion of the upper surface facing the rays.

In a case where components such as side flaps and crotch portions are arranged on multiple webs which are being conveyed while being arranged side by side in the width direction of the webs, articles in various sizes can be handled easily by a web conveying step of conveying a front waistline web 11A and a back waistline web 11B the webs being arranged side by side in a width direction of the webs, a flap attaching step of attaching side flaps 30 onto the web 11 of the front waistline web 11A or the back waistline web, a web gap changing step of changing a gap between the front waistline web 11A and the back waistline web 11B by a web gap changing mechanism 500 and a crotch member attaching step of attaching a crotch member 20 between the front waistline web 11A and the back waistline web 11B, wherein the web gap changing step is performed between the flap attaching step and the crotch member attaching step.

Techniques and mechanisms for configuring logic to implement a signal modulation. In an embodiment, the logic includes a finite impulse response (FIR) module comprising circuitry. The selection circuitry may be operable to concurrently receive signals from latch circuitry of the FIR module and, based on the signals, to select an input group of the selection circuitry and to output a voltage identifier. In another embodiment, configuration logic is operable to set an operational mode which determines a total number of concurrent input signals, received by the FIR module, which the FIR module will use to select an input group for generating an output representing a voltage level.

An arc chute assembly includes a housing having a first wall, a second wall, and a pair of side walls coupled to the first wall. The walls configured to form an arc area. The housing further having a divider wall coupled to the first wall between the side walls. The divider wall configured to form a first sub-arc area, a second sub-arc area, and an arc plate area. The first sub-arc area and the second sub-arc area are configured to be in flow communication with the arc plate area. The arc chute assembly further comprises a support coupled to the first wall and the side walls, and an arc plate coupled to the support. The arc plate having a body extending between the side walls and over the divider wall.

A response form security device is provided for use with a generally planar response form having an answer area bearing answer blanks upon which a respondent makes marks to indicate a plurality of responses. The security device includes a sleeve adapted and constructed to slidably receive and cover the response form. An access window is formed in the sleeve, and permits visual access by the respondent to a number of fewer than all of the answer areas of the response form. The length of the sleeve and the configuration of the answer window are chosen so as to prevent anyone other than the user from seeing a number of marks on the answer area sufficient to observe a repeatable pattern of marks.

The present invention relates to a multilayer information page (1) for a security document, which includes an information part (3) manufactured from a material allowing at least some identification information of the information page to be entered thereto by utilizing laser engraving, the identification information provided on the information page (1) being readable from an upper surface thereof, and a flexible and bending resistant connecting part (2) for connecting the information page (1) to the security document, the connecting part (2) comprising a fastening end (8) by means of which the connecting part (2) is fastened to the information part (3). In order to ensure that detachment of the information part and the connecting part from one another leaves visible marks, the fastening end (3) of the connecting part (2) is arranged to overlap with a lower surface of the information part (3). Furthermore, the information page (1) includes a transparent surface layer (7) which covers at least the fastening end (8) and at least a part of the lower surface of the information part (3) and through which at least the fastening end (8) is visible.

A light emitting apparatus including: a plurality of light emitting elements; a drive circuit including a transistor and a capacitor having one end connected to a gate of the transistor; and a signal supply circuit for receiving a digital gradation signal and outputting an analog voltage signal to the drive circuit, including a computation circuit configured to correct the input digital gradation signal to generate a corrected digital gradation signal, in which the drive circuit is configured to conduct an auto-zero operation which reduce the gate-source voltage of the transistor to a threshold voltage by flowing the drain current to the capacitor, and the computation circuit is configured to generate the corrected digital gradation signal by multiplying a correction coefficient to the input digital gradation signal subtracted by a particular signal common to the plurality of light emitting elements.

An adhesive layer that bonds the back surface of a plate capable of attracting a wafer and the front surface of a cooling plate together that includes a main adhesive portion, which is made of a hardened matter of a fluid adhesive, and an outer peripheral adhesive portion, gas-supply-hole adhesive portions, lift-pin-hole adhesive portions, and terminal-hole adhesive portions made of a double-faced tape. The tape portions bond the outer peripheral edge on the back surface of the plate and the outer peripheral edge on the front surface of the cooling plate together, and the outer peripheral edges of the holes on the back surface of the plate and the outer peripheral edges of these holes on the front surface of the cooling plate together.

A process for manufacturing surgical needles from solid, cylindrical needle blanks. A plurality of needle blanks are cut from a roll of wire and mounted to a flat carrier strip. The carrier strip then indexes each needle blank to a grinding station where an orbital grinding means grinds the distal end of each needle blank into a taper point while the needle blanks are held fixed in the carrier strip.

A surgical needle has a top edge formed by two pressed faces located inside or outside of curvature from pressing a material blank made of austenitic stainless steel having fibrous texture and cutting edges formed on both sides of a base. The top edge is sharp at a needle point and the sharp needle point is constituted of fibrous texture formed at the surface layer of the material blank. Grinding marks extending crosswise formed on the face of the mold are transferred to the pressed faces. A mold constitutes plural faces forming projecting angles (angle between two intersecting faces is 180° or below, and the line at which the two faces intersect is made as a projecting line) along edges of the blocks made of two rectangular prisms, and constitutes a cavity by suitably contacting the edges of the blocks.

A process for progressively manufacturing cutting edge needles or wire members. Needle blanks or wire blanks are cut from a roll of wire and mounted to a carrier strip. The carrier strip and needles are moved through a succession of coining dies and at least one trimming die, wherein the first coining die is an open coining die and the one or more successive coining dies are closed coining dies. The needle blanks or wire members are optionally curved, heat treated and electrochemically treated resulting in cutting edge needles or wire members formed without a grinding step and without adversely affecting point ductility.