A display device is provided. The display device includes a housing, a backlight module, a shielding member, a cover, and a display panel. The housing includes a bottom sidewall, a top sidewall, and a platform disposed between the bottom sidewall and the top sidewall, and the housing further includes a bottom cavity surrounded by the bottom sidewall and a top cavity surrounded by the top sidewall. The backlight module is disposed in the bottom cavity. The shielding member is disposed on the platform and covering a portion of the backlight module. The cover is disposed on the housing. The display panel is attached to the cover and disposed in the top cavity.

Discussed are a backlight unit and an autostereoscopic 3D (three-dimensional) display device including the same, in which a 3D image can be displayed without using a 3D light controller that includes a liquid crystal layer. The backlight unit may include a 3D light guide plate having first light output patterns, first light sources irradiating light to at least one side of the 3D light guide plate, a 2D (two-dimensional) light guide plate arranged below the 3D light guide plate, and second light sources irradiating light to at least one side of the 2D light guide plate. The first light output patterns are a plurality of line prism patterns spaced apart from each other.

A display device comprises a display unit and a display supporting unit. The display supporting unit includes a base including a body and at least three stands. The bottom of the body includes a center hole. The stands are connected to the body. A support arm, an end of the support arm is sleeved on the base. A light emitting unit is disposed at the support arm adjacent to the base. A light cover is disposed at the support arm between the light emitting unit and the center hole of the body.

One embodiment relates to an apparatus, comprising logic, at least partially incorporated into hardware, to receive a plurality of notifications from each of a plurality of notification sources, determine a ranking score for each notification relative to any other notification received from the same notification source, and determine a notification class for each ranked notification relative to the ranked notifications from all notification sources based upon at least one blending attribute and at least one user contextual state.

The present disclosure relates to a method and electronic device for query recommendation, comprising: acquiring a history query statement inputted by a preset user; performing statement analysis on the history query statement to obtain statement information of the history query statement; determining data table entry information queried by the history query statement according to the statement information, determining a cluster label corresponding to the preset user according to the data table entry information; determining a recommended query object corresponding to the preset user according to cluster labels corresponding to a plurality of history query statements; and generating a recommended query statement corresponding to the recommend query object. The inputting efficiency of query statements is raised, and correspondingly, the efficiency of data query is also improved.

A search system includes a user interface configured to receive information about a first application from a developer of the first application. The search system includes a state access module configured to obtain information about a first type of state of the first application from the developer. The information includes an action performed by the first type of state, a first access URL template, and a designation of at least one parameter for the first access URL template. The first application is configured to display a specific state of the first type of state in response to receiving an access URL formed by instantiating the first access URL template with at least one value for the at least one parameter. The search system includes a search engine configured to, in response to a query, obtain data from the first application according to the information about the first type of state.

A method for separating carbon dioxide from a gas stream, in particular from a flue gas stream, wherein, a gas stream is brought into contact with a washing medium in an absorber of a separation device and the carbon dioxide contained in the gas stream is separated; the charged washing medium is supplied to a desorber of the separation device to release the carbon dioxide; a vapor stream is removed from the desorber and is supplied to a cooling unit to form a condensate; degradation products, in particular nitrosamines, contained in at least a partial stream of the condensate are photolytically decomposed to decomposition products; at least the decomposition products, in particular nitrites and amines, are removed; and at least a partial stream of the condensate is returned to the desorber. A corresponding separation device separates carbon dioxide from a gas stream.

A device for separating carbon dioxide from a gas stream, in particular from a flue gas stream, includes an absorber for separating the carbon dioxide from the gas stream by means of a washing medium, a desorber which is fludically connected to the absorber to release the absorbed carbon dioxide from the washing medium, a gas cooler which is fludically connected upstream of the absorber to cool the gas stream, and a processing unit which is connected downstream of the gas cooler and which is equipped and designed to clean water from the gas cooler. A method separates carbon dioxide from a gas stream.

A device for extraction of pollutants by multichannel tubular membrane containing at least one fluid channel allowing the fluid to go through a feed inlet to an outlet end characterized in that membrane comprises at least an extraction channel filled with molten salt in order to adsorb said pollutants having to be extracted from the said fluid. Advantageously, the membrane is a ceramic membrane. An application is for the treatment of traces of pollutants in a liquid or gaseous fluid. For example, the removal of small pollutants as volatile organic compounds from an aqueous stream in industrial wastewater treatment or other water treatment applications, or the separation of aromatic compounds form an hydrocarbon feed in petrochemical applications. Another application is in the removal of water traces in products of high added value as pharmaceutical, cosmetic or biocarburant for example.

A mobile purification device for purifying indoor air and/or fresh air, has a holder and a filter element having a particle-filtering and a gas-adsorbing region, the particle-filtering region having a filter medium and the filter element being received in the holder to purify indoor air and/or fresh air containing smoke and/or particles and is useful as a mobile purification device, filtering particle-polluted and/or smoke-polluted indoor air and/or fresh air as effectively as possible, with particulate, emitted contaminants being prevented as far as possible from being discharged from the gas-adsorbing region into a space, wherein the particle-filtering region faces a downstream side of the holder and in that the gas-adsorbing region faces an upstream side, which can be supplied with indoor air and/or fresh air polluted with smoke and/or particles.

A dust collection device (1) for removing fine particles from an atmosphere is provided with a filter (3), a blower (11), a dust removal device (7), and a pressure introduction device (9). The filter (3) removes fine particles from an atmosphere drawn into a filter chamber (5A). The blower (11) draws the atmosphere into the filter chamber (5A) and generates an air flow through the filter (3). The dust removal device (7) removes fine particles adhering to the filter (3). The pressure introduction device operates during operation of the dust removal device (7) and introduces an atmospheric pressure higher than the atmospheric pressure inside an air passage to the air passage downstream from the filter (3).

A method for treating a synthesis gas from a gasification step. The synthesis gas is cooled to condense heavy organic impurities and water. At the end of the cooling step, light organic impurities and inorganic impurities are adsorped by at least one adsorption bed. The water and heavy tars are separated by decantation from the step of cooling the synthesis gas. At least one adsorption bed is regenerated by temperature-modulated or pressure-modulated desorption.

An additive manufacturing device includes at least one liquefier assembly that receives filament material from at least one feedstock and extrudes the material in a flowable form. A thermal drying system removes water vapor and heats compressed air to a preselected temperature set point to form conditioned air. At least one enclosed filament path houses and guides the filament material from a supply to the at least one liquefier assembly. The enclosed filament path is exposed to the conditioned air from the thermal drying system so as to keep the filament material dry as it is fed to the at least one liquefier assembly.

A compressed air drying device that dries compressed air discharged from a compressor includes a dryer and a controller. The dryer includes a drying container, which is filled with a desiccant, and a discharge valve arranged in a discharge port that discharges drainage produced by regeneration of the desiccant. The controller obtains an ambient temperature and controls opening and closing of the discharge valve. When the ambient temperature is a temperature at which freezing occurs, the controller moves the compressed air, which is discharged from the compressor and heated, into the dryer and restricts opening of the discharge valve.

The present invention corresponds to a device for extracting water from the environment by means of a liquid desiccant. The device comprises a means for capturing water from the environment using a liquid desiccant, an extraction chamber, a first duct through which liquid desiccant with water flows from the capture means to the extraction chamber, a second duct through which liquid desiccant flows from the extraction chamber to the capture means, a reservoir for depositing water extracted from the liquid desiccant in the extraction chamber, a third duct through which water flows from the extraction chamber to the reservoir, a means to create a vacuum within the extraction chamber, and a control device that controls the heating element. The extraction chamber comprises a container located at the bottom of the extraction chamber, in which the water captured by the liquid desiccant is extracted and a heating element located within the container

A flush driving device for a toilet includes a mounting bracket, a control panel that includes a sensing window and manual buttons, and a manual operating mechanism that includes bars cooperating with the manual buttons and rotating mechanisms connected with the bars. Rotating shafts of the rotating mechanisms are mounted in the mounting bracket. An automatic operating mechanism includes a driving motor, a rod controlled by the driving motor, and lifting mechanisms cooperating with the rod. The flush driving device also includes pull arms connected to both the rotating mechanisms and the lifting mechanisms for controlling the flush of the toilet.

A clamping device for mounting a sink to a counter, includes a clamp having a clamp body and a binding tab, a binding post for insertion through a first opening in the clamp body and into a hole in a surface of the sink adjacent to a clamped article, the clamp and binding tab connected to the post and extending away therefrom at least partially over an edge of the clamped article, and a clamp screw for insertion through a second opening in the clamp body and against a solid portion of the binding tab interposed between the clamp screw and the edge of the clamped article.

There is provided a flush toilet device capable of being configured in a compact size and supplying a sufficient flow amount of water to a toilet to reliably flush and discharge waste. According to the flush toilet device, a straight pipe portion of a throat which is arranged inside a tank is arranged in a state where a center axis thereof inclines with respect to a front-back direction of the tank when viewed from an upper side.

The device has a line arrangement (2), which possesses an inlet (3) connectable to a supply line and an outlet (4) connectable to a shower arm (5). A heating element (6) serves for the provision of warm water. An energy store (7, 8) is provided, with which the power range for the provision of shower water can be extended. The heating element (6) for the provision of warm water is, in particular, a continuous-flow heater. The energy store (7, 8) is, in particular, a thermal, electrical, electrochemical or chemical energy store. During the shower process, the energy store is available as an additional energy source for the preparation of shower water.

A lavatory pan device for separating stool and urine includes a stool and urine tray, a supporting device, and a moment force producing device. The stool and urine tray consists of a flat plate and the rib inclining upward and extending outward from the whole or partial edge of the flat plate. The lavatory pan has an opening or an entry way at the longitudinal side and is connected on the supporting device. Through the moment force produced by the prescribed moment force producing device, the stool and urine tray can roll over on the supporting device. The described moment force producing device is set on the stool and urine tray and it is between tow supports of the above supporting device and the opening or entry way.

Provided is a device for use in a shower system and a related method. The device may include an appliance for adding a medium to shower water. The appliance may be designed such that it works according to the principle of a water jet pump. Advantageously, the medium added to the shower water may contain one or more fragrance media.

A toilet training device includes an odor remediation system for absorbing or masking odors that may be created during toilet training. The odor remediation system may include a modular odor remediating insert that may be releasably positioned within a recess that is provided within the toilet training device. The odor remediating insert may include an odor absorbing substance such as sodium bicarbonate, an odor masking substance such as a fragrance or a combination of an odor absorbing substance and an odor masking substance. The toilet training device also includes a system for dispensing wipes that may utilize a recess that is defined in a side wall of the main body portion of the toilet training device. A wipes cartridge is designed so that it can be used to conveniently dispense wipes regardless of whether it is separated from the toilet training device or mounted within the recess of the toilet training device.

An electromotive drive device of an electric motor-driven mini-excavator, which is capable of lengthening its operating time, includes an electric power storage device, a motor-generator, a hydraulic pump, a plurality of directional control valves which respectively control the flow of pressurized fluid, and a plurality of operating devices which respectively operate the plurality of directional control valves. The electromotive drive device is provided with a bidirectional converter which decelerates the motor-generator to an idle revolution speed when X seconds have elapsed in a state in which the plurality of directional control valves are all not operated. The bidirectional converter performs regenerative control to convert an inertial force of a rotor of the motor-generator to power and charge the electric power storage device when it decelerates the motor-generator from a standard revolution speed to the idle revolution speed.

A huller device for hulling bunches of grapes after a harvest or other fruits harvested in bunches by separating the fruit from the stalks, includes two shaking units disposed side by side and defining a vertical space into which the harvest is intended to be directed by gravity. A device for collecting the fruits and the stalks is disposed under the shaking units.

A conditioning device for a forage harvester is equipped with a first roller, profiled in the axial direction, and a second roller, also profiled in the axial direction. The two rollers are rotated, around their axes, in opposite directions and are aligned parallel to one another. An element, profiled, in the axial direction, in a manner complementary to the profile of the first roller and adjacent to the circumference of the first roller, for the removal of crop residues from the roller, extends in a circular arc over a part of the circumference of the first roller.

A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.

An example method includes providing a packaging device includes a substrate having an integrated circuit die mounting region. A plurality of microstructures, each including an outer insulating layer over a conductive material, are disposed proximate a side of the integrated circuit die mounting region. An underfill material is disposed between the substrate and the integrated circuit die, the microstructures preventing spread of the underfill. In another example method, a via can be formed in a substrate and the substrate etched to form a bump or pillar from the via. An insulating material can be formed over the bump or pillar. In another example method, a photoresist deposited over a seed layer and patterned to form openings. A conductive material is plated in the openings, forming a plurality of pillars or bumps. The photoresist and exposed seed layer are removed. The conductive material is oxidized to form an insulating material.

A semiconductor device includes a first moisture-resistant ring disposed in a peripheral region surrounding a circuit region on a semiconductor substrate in such a way as to surround the circuit region and a second moisture-resistant ring disposed in the peripheral region in such a way as to surround the first moisture-resistant ring.

A semiconductor device includes a substrate comprising a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned at a level lower than a top surface of the substrate, and comprising a lower buried portion embedded in a lower portion of the trench over the gate dielectric layer and an upper buried portion positioned over the lower buried portion; and a dielectric work function adjusting liner positioned between the lower buried portion and the gate dielectric layer; and a dipole formed between the dielectric work function adjusting liner and the gate dielectric layer.

A method for forming a V-NAND device is disclosed. Specifically, the method involves deposition of at least one of semiconductive material, conductive material, or dielectric material to form a channel for the V-NAND device. In addition, the method may involve a pretreatment step where ALD, CVD, or other cyclical deposition processes may be used to improve adhesion of the material in the channel.

Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.

A performance of a semiconductor device is improved. A film, which is made of silicon, is formed in a resistance element formation region on a semiconductor substrate, and an impurity, which is at least one type of elements selected from a group including a group 14 element and a group 18 element, is ion-implanted into the film, and a film portion which is formed of the film of a portion into which the impurity is ion-implanted is formed. Next, an insulating film with a charge storage portion therein is formed in a memory formation region on the semiconductor substrate, and a conductive film is formed on the insulating film.

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.

A TFT and manufacturing method thereof, an array substrate and manufacturing method thereof, an X-ray detector and a display device are disclosed. The manufacturing method includes: forming a gate-insulating-layer thin film (3'), a semiconductor-layer thin film (4') and a passivation-shielding-layer thin film (5') successively; forming a pattern (5') that includes a passivation shielding layer through one patterning process, so that a portion, sheltered by the passivation shielding layer, of the semiconductor-layer thin film forms a pattern of an active layer (4a'); and performing an ion doping process to a portion, not sheltered by the passivation shielding layer, of the semiconductor-layer thin film to form a pattern comprising a source electrode (4c') and a drain electrode (4b'). The source electrode (4c') and the drain electrode (4b') are disposed on two sides of the active layer (4a') respectively and in a same layer as the active layer (4a'). The manufacturing method can reduce the number of patterning processes and improve the performance of the thin film transistor in the array substrate.

A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.

A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor.

To provide a semiconductor device having improved reliability. After formation of an n+ type semiconductor region for source/drain, a first insulating film is formed on a semiconductor substrate so as to cover a gate electrode and a sidewall spacer. After heat treatment, a second insulating film is formed on the first insulating film and a resist pattern is formed on the second insulating film. Then, these insulating films are etched with the resist pattern as an etching mask. The resist pattern is removed, followed by wet washing treatment. A metal silicide layer is then formed by the salicide process.

A method of fabricating a semiconductor device includes forming a gate strip including a dummy electrode and a TiN layer. The method includes removing a first portion of the dummy electrode to form a first opening over a P-active region and an isolation region. The method includes performing an oxygen-containing plasma treatment on a first portion of the TiN layer; and filling the first opening with a first metal material. The method includes removing a second portion of the dummy electrode to form a second opening over an N-active region and the isolation region. The method includes performing a nitrogen-containing plasma treatment on a second portion of the TiN layer; and filling the second opening with a second metal material. The second portion of the TiN layer connects to the first portion of the TiN layer over the isolation region.

A method for forming a semiconductor structure includes forming a strained silicon germanium layer on top of a substrate. At least one patterned hard mask layer is formed on and in contact with at least a first portion of the strained silicon germanium layer. At least a first exposed portion and a second exposed portion of the strained silicon germanium layer are oxidized. The oxidizing process forms a first oxide region and a second oxide region within the first and second exposed portions, respectively, of the strained silicon germanium.

A method for manufacturing an LDMOS device includes: providing a semiconductor substrate (200), forming a drift region (201) in the semiconductor substrate (200), forming a gate material layer on the semiconductor substrate (200), and forming a negative photoresist layer (204) on the gate material layer; patterning the negative photoresist layer (204), and etching the gate material layer by using the patterned negative photoresist layer (204) as a mask so as to form a gate (203); forming a photoresist layer having an opening on the semiconductor substrate (200) and the patterned negative photoresist layer (204), the opening corresponding to a predetermined position for forming a body region (206); and injecting the body region (206) by using the gate (203) and the negative photoresist layer (204) located above the gate (203) as a self-alignment layer, so as to form a channel region.

The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP layer formed over the first SiP layer and in the recess, wherein the second SiP layer has a phosphorus concentration higher than that of the first SiP layer.

A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.

Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

An organic layer deposition assembly for depositing a deposition material on a substrate includes a deposition source configured to spray the deposition material, a deposition source nozzle arranged in one side of the deposition source and including deposition source nozzles arranged in a first direction, a patterning slit sheet arranged to face the deposition source nozzle and having patterning slits in a second direction that crosses the first direction, and a correction sheet arranged between the deposition source nozzle and the patterning slit sheet and configured to block at least a part of the deposition material sprayed from the deposition source.

A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system.

Foreign objects that have entered inside an insertion body are suppressed from reaching a detector side. In a buckle device, when a tongue plate is attached, an ejector slides downwards inside a buckle body, opening a through hole in a partitioning wall of a lower cover at the upper side. A main body portion of a slider member of a buckle switch is inserted into the through hole, closing off a portion of the through hole that has been opened by the ejector. Hence it is suppressed that foreign objects discharged through an insertion through hole in the buckle body to outside the buckle body pass through the through hole and reach the buckle switch side further than the partitioning wall.